CN104625433A - Method for cutting LED lamp filament transparent material support - Google Patents
Method for cutting LED lamp filament transparent material support Download PDFInfo
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- CN104625433A CN104625433A CN201410852693.7A CN201410852693A CN104625433A CN 104625433 A CN104625433 A CN 104625433A CN 201410852693 A CN201410852693 A CN 201410852693A CN 104625433 A CN104625433 A CN 104625433A
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- laser beam
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- support material
- filament support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- Optics & Photonics (AREA)
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- Laser Beam Processing (AREA)
Abstract
The invention is applicable to the technical field of laser inscribing and provides a method for cutting an LED lamp filament transparent material support. The method comprises the steps that step 1, a pulse of a focused laser beam is used for irradiating the interior of a lamp filament support material, wherein the lamp filament support material is transparent to the wavelength of the laser beam, the pulse of the laser beam comprises at least two eruptible sub-pulses, and the time range between the adjacent sub-pulses is 1-100 ns; step 2, the focused laser beam is used for cutting the positions at different heights from the bottom face along a cutting path in the lamp filament material, wherein burst points moving along the cutting path are formed in the lamp filament support material, and the spaces between the cut positions at different heights are equal; step 3, external stress is applied to the cutting path to make the lamp filament support material crack along the cutting path. By means of the method, cut edges are very high in quality, no ablated section is generated, tiny cracks can be controlled within 10 micrometers, no heat affected zone is formed, and no material loss is caused.
Description
Technical field
The invention belongs to laser inscribe technical field, particularly relating to a kind of method for cutting LED silk transparent material carrier.
Background technology
Develop with high efficiency with work LED high briliancyization after 2000, especially the luminous efficiency of blue LED elements obtains and significantly improves, liquid crystal, household electrical appliances, automobile and other industries are power saving, high briliancy, long life, high color reprodubility to the characteristic that high-capacity LED is expected respectively, this meaning work thermal diffusivity is good is the integral condition of high power LED package substrate, therefore ceramic packaging substrate instead of traditional resin substrate, and instead of pottery by the better sapphire of heat dispersion in recent years.
Sapphire, owing to having the high and characteristic that fragility is large of hardness, carries out machining to it very difficult, so generally adopt high-capacity optical fiber laser directly to melt sapphire to realize cutting to it.
This traditional laser cutting method can produce edge inferior and micro-crack in process, and these are the major defects in service life of product, quality and reliability; And the width of otch is very wide, cause the rising of cost of material.In addition, the heat trnasfer in the process of laser interaction can cause the additional heat of large regions to be damaged, i.e. heat affected area.
Summary of the invention
The object of the embodiment of the present invention is to provide a kind of method for cutting LED silk transparent material carrier, to solve in prior art cutting process the problem that can produce edge inferior, micro-crack and heat affected area.
The embodiment of the present invention is achieved in that a kind of method for cutting LED silk transparent material carrier, said method comprising the steps of:
Step 1, with focus on laser beam pulse irradiation described in filament support material internal;
Described filament support material is transparent for the wavelength of described laser beam; The pulse of described laser beam comprises the subpulse of the outburst of at least two, and the time range apart of adjacent described subpulse is 1ns ~ 100ns;
Step 2, is cutting respectively at distance differing heights place, bottom surface along cutting path in described filament material inside with the laser beam after described focusing, is forming the point of burst by described cutting path movement at described filament support material internal;
Carry out spacing between the described differing heights that cuts equal;
Step 3, uses external stress to act on described cutting path, described filament support material is split along described cutting path.
In first preferred embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention: the quantity of the described subpulse that described cutting laser beam comprises is 2 ~ 10; The position of described laser beam focus is in the inside of described filament support material.
In second preferred embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention: the pulse width range of described laser beam is 1ps ~ 100ns.
In 3rd preferred embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention: the pulse energy range of described laser beam is 7 ~ 15 micro-Jiao.
In 4th preferred embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention: the pulse recurrence rate scope of described laser beam is 10Khz ~ 1Mhz.
In 5th preferred embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention: carry out from low to high in described filament material inside in the cutting process in described step 2 repeating line, the laser beam after described focusing starts to rule at the height of described filament support material internal distance 20 microns to 50 microns, bottom surface;
When described filament support material thickness is greater than 100 microns, the scope of carrying out spacing between the described differing heights that cuts is 50 ~ 150 microns.
In 6th preferred embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention: in step 2, when described filament support material internal cuts, the scope of the translational speed of the laser beam of described focusing is 0.1mm/s ~ 8000mm/s.
In 7th preferred embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention: described filament support material comprises sapphire, glass or crystalline ceramics.
In 8th preferred embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention: the equipment generating the laser beam of described focusing comprises laser instrument 4, speculum 6 and focus head 7;
The collimated light beam 5 of the horizontal direction of being launched by described laser instrument 4 enters described focus head 7 in a downward direction after described speculum 6 reflects, and forms the laser beam 8 after described focusing.
The beneficial effect of a kind of method for cutting LED silk transparent material carrier that the embodiment of the present invention provides comprises:
Utilize the nonlinear effect that the high light intensity of laser after focusing on produces in transparent material inside, the interaction of laser and material is accurately limited in focus, the point of burst close to diffraction limit focus spot can be formed in transparent material inside, laser moves according to cutting path relative to filament support material, and form the point of burst by cutting path movement at filament support material internal, then by external stress, this filament support material is split along cutting path, at above-mentioned short-pulse laser under burst mode, first subpulse forms point of burst at material internal, several subpulses subsequently almost arrive the point of burst just formed at one time, expand the area of original point of burst, this cutting mode does not almost have heat affected area, being of high quality of cut edge, there is no ablated tangent plane, micro-crack can control within 10 microns, without heat affected area, without spillage of material, and the basis of working (machining) efficiency blanking method in short-pulse laser is improved again the working (machining) efficiency of 3 to 4 times, reach more than 200mm/s, realize high-quality LED silk support processing.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the flow chart of a kind of method for cutting LED silk transparent material carrier provided by the invention;
Fig. 2 is the impulse waveform schematic diagram of a kind of laser beam for cutting LED silk transparent material carrier that the embodiment of the present invention provides;
Fig. 3 is the cutting schematic diagram of a kind of method for cutting LED silk transparent material carrier that the embodiment of the present invention provides;
Fig. 4 is the inscribe schematic diagram of a kind of method for cutting LED silk transparent material carrier that the embodiment of the present invention provides;
Fig. 5 is the structural representation of the equipment of a kind of equipment, method use for cutting LED silk transparent material carrier that the embodiment of the present invention provides.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
In order to technical solutions according to the invention are described, be described below by specific embodiment.
Being illustrated in figure 1 the flow chart of a kind of method for cutting LED silk transparent material carrier provided by the invention, said method comprising the steps of:
Step 1, with the material internal of the pulse irradiation filament support of the laser beam focused on; This filament support material is transparent for the wavelength of laser beam; The pulse of laser beam comprises the subpulse of the outburst of at least two, and the scope at a distance of the time of adjacent subpulse is 1ns ~ 100ns.
Step 2, is cutting respectively at distance differing heights place, bottom surface along cutting path in filament material inside with the laser beam after focusing on, is forming the point of burst by cutting path movement at filament support material internal.Carry out spacing between the differing heights that cuts equal.
Step 3, uses external stress to act on cutting path, filament support material is split along cutting path.
A kind of method for cutting LED silk transparent material carrier that the embodiment of the present invention provides, according to the wavelength of filament support Material selec-tion laser beam, filament support material is transparent for the wavelength of laser beam, utilize the nonlinear effect that the high light intensity of laser after focusing on produces in transparent material inside, the interaction of laser and material is accurately limited in focus, the point of burst close to diffraction limit focus spot can be formed in transparent material inside, laser moves according to cutting path relative to filament support material, and form the point of burst by cutting path movement at filament support material internal, then by external stress, this filament support material is split along cutting path.At above-mentioned short-pulse laser under burst mode, first subpulse forms point of burst at material internal, and several subpulses subsequently almost arrive the point of burst just formed at one time, expand the area of original point of burst.
This cutting mode does not almost have heat affected area, being of high quality of cut edge, there is no ablated tangent plane, micro-crack can control within 10 microns, without heat affected area, without spillage of material, and the basis of working (machining) efficiency blanking method in short-pulse laser is improved again the working (machining) efficiency of 3 to 4 times, reach more than 200mm/s, realize high-quality LED silk support processing.
In the embodiment of a kind of method for cutting LED silk transparent material carrier provided by the invention, the quantity of the subpulse that cutting laser beam comprises is 2 ~ 10, the impulse waveform schematic diagram of a kind of laser beam for cutting LED silk transparent material carrier that Fig. 2 provides for the embodiment of the present invention, in the embodiment that Fig. 2 provides, adjacent two pulses at a distance of the time be 100ps, a laser beam pulses waveform comprises the subpulse of 4 outbursts, first subpulse forms point of burst at filament support material internal, follow-up subpulse expands the point of burst of first sub-pulse shaping at the filament support material internal that arrives soon after, single point of burst is formed together with first subpulse, increase the size in the cutting direction of single point of burst, improve cutting speed.
Further, the position of laser beam focus is in the inside of filament support material, and the pulse width range of laser beam is 1ps ~ 100ns, and the pulse energy range of laser beam is 7 ~ 15 micro-Jiao, and the pulse recurrence rate scope of laser beam is 10Khz ~ 1Mhz.
As Fig. 3 and Fig. 4 is respectively cutting schematic diagram and the inscribe schematic diagram of a kind of method for cutting LED silk transparent material carrier that the embodiment of the present invention provides.
In the cutting embodiment that Fig. 3 provides, need filament material 1 to be processed into square, wherein a length of side is filament Len req, rules at material internal with the limit of laser along filament length, and single lamp bar 2 is divided from parent 1 by splitting tool 3.
Cutting respectively along cutting path at distance differing heights place, bottom surface in LED wire material inside with the laser beam after focusing in step 2, concrete, carry out from low to high in LED wire material inside in this cutting process repeating line, the laser beam after focusing starts to rule at the height of filament support material internal distance about 20 microns to 50 microns, bottom surface.When filament support material thickness is greater than 100 microns, the scope of carrying out spacing between the differing heights that cuts is 50 ~ 150 microns.
The scope of the translational speed of the laser beam focused on when filament support material internal cuts in step 2 is 0.1mm/s ~ 8000mm/s.
Further, filament support material can be sapphire, glass or crystalline ceramics.
Embodiment one
Embodiment one provided by the invention is the embodiment of the equipment that a kind of equipment, method for cutting LED silk transparent material carrier provided by the invention uses, be illustrated in figure 5 the structural representation of a kind of equipment for cutting LED silk transparent material carrier that the embodiment of the present invention provides, as shown in Figure 5, this equipment comprises laser instrument 4, speculum 6 and focus head 7.
The collimated light beam 5 of the horizontal direction of being launched by laser instrument 4 enters focus head 7 in a downward direction after speculum 6 reflects, and forms the laser beam 8 after focusing on.The wavelength of the collimated light beam 5 that this laser instrument 4 is launched can be 1064 nanometers.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. for cutting a method for LED silk transparent material carrier, it is characterized in that, described method comprises:
Step 1, with focus on laser beam pulse irradiation described in filament support material internal;
Described filament support material is transparent for the wavelength of described laser beam; The pulse of described laser beam comprises the subpulse of the outburst of at least two, and the time range apart of adjacent described subpulse is 1ns ~ 100ns;
Step 2, is cutting respectively at distance differing heights place, bottom surface along cutting path in described filament material inside with the laser beam after described focusing, is forming the point of burst by described cutting path movement at described filament support material internal;
Carry out spacing between the described differing heights that cuts equal;
Step 3, uses external stress to act on described cutting path, described filament support material is split along described cutting path.
2. the method for claim 1, is characterized in that, the quantity of the described subpulse that described cutting laser beam comprises is 2 ~ 10; The position of described laser beam focus is in the inside of described filament support material.
3. the method for claim 1, is characterized in that, the pulse width range of described laser beam is 1ps ~ 100ns.
4. the method for claim 1, is characterized in that, the pulse energy range of described laser beam is 7 ~ 15 micro-Jiao.
5. the method for claim 1, is characterized in that, the pulse recurrence rate scope of described laser beam is 10Khz ~ 1Mhz.
6. the method for claim 1, it is characterized in that, carry out from low to high in described filament material inside in cutting process in described step 2 repeating line, the laser beam after described focusing starts to rule at the height of described filament support material internal distance 20 microns to 50 microns, bottom surface;
When described filament support material thickness is greater than 100 microns, the scope of carrying out spacing between the described differing heights that cuts is 50 ~ 150 microns.
7. the method for claim 1, is characterized in that, in step 2, when described filament support material internal cuts, the scope of the translational speed of the laser beam of described focusing is 0.1mm/s ~ 8000mm/s.
8. the method for claim 1, is characterized in that, described filament support material comprises sapphire, glass or crystalline ceramics.
9. the method for claim 1, is characterized in that, the equipment generating the laser beam of described focusing comprises laser instrument (4), speculum (6) and focus head (7);
The collimated light beam (5) of the horizontal direction of being launched by described laser instrument (4) enters described focus head (7) in a downward direction after described speculum (6) refraction, forms the laser beam (8) after described focusing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410852693.7A CN104625433A (en) | 2014-12-31 | 2014-12-31 | Method for cutting LED lamp filament transparent material support |
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| CN201410852693.7A CN104625433A (en) | 2014-12-31 | 2014-12-31 | Method for cutting LED lamp filament transparent material support |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105272179A (en) * | 2015-11-25 | 2016-01-27 | 苏州晶品新材料股份有限公司 | Production method of high-accuracy LED ceramic filament support |
| CN105428500A (en) * | 2015-11-25 | 2016-03-23 | 苏州晶品新材料股份有限公司 | Preparation method for high precision LED flip ceramic filament support |
| CN105914267A (en) * | 2016-05-27 | 2016-08-31 | 山东浪潮华光光电子股份有限公司 | Method of preparing sapphire substrate LED chip through laser cutting |
| CN106238907A (en) * | 2016-08-22 | 2016-12-21 | 大族激光科技产业集团股份有限公司 | The laser processing of LED wafer |
| CN107442952A (en) * | 2016-05-30 | 2017-12-08 | 株式会社迪思科 | The generation method of laser processing device and GaN wafer |
| CN111151895A (en) * | 2020-01-13 | 2020-05-15 | 大族激光科技产业集团股份有限公司 | Process and system for cutting transparent material by utilizing filamentation effect |
| CN112719635A (en) * | 2020-12-28 | 2021-04-30 | 武汉华工激光工程有限责任公司 | Method and device for cutting transparent brittle material |
| CN113075908A (en) * | 2021-03-23 | 2021-07-06 | 王豪 | Method for processing gem and jade artware through numerical control engraving and milling |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105428500B (en) * | 2015-11-25 | 2018-10-12 | 苏州晶品新材料股份有限公司 | A kind of preparation method of high-precision LED upside-down mountings ceramics filament support |
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| CN111151895A (en) * | 2020-01-13 | 2020-05-15 | 大族激光科技产业集团股份有限公司 | Process and system for cutting transparent material by utilizing filamentation effect |
| CN112719635A (en) * | 2020-12-28 | 2021-04-30 | 武汉华工激光工程有限责任公司 | Method and device for cutting transparent brittle material |
| CN113075908A (en) * | 2021-03-23 | 2021-07-06 | 王豪 | Method for processing gem and jade artware through numerical control engraving and milling |
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