CN104576804A - 一种石墨烯/磷化铟太阳电池及其制备方法 - Google Patents

一种石墨烯/磷化铟太阳电池及其制备方法 Download PDF

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CN104576804A
CN104576804A CN201410830593.4A CN201410830593A CN104576804A CN 104576804 A CN104576804 A CN 104576804A CN 201410830593 A CN201410830593 A CN 201410830593A CN 104576804 A CN104576804 A CN 104576804A
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林时胜
王朋
李晓强
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Zhejiang University ZJU
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/078Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

本发明涉及一种石墨烯/磷化铟太阳电池及其制备方法,该石墨烯/磷化铟太阳电池自上而下依次有正面电极、石墨烯层、磷化铟基底和背面电极。其制备流程包括:先在磷化铟衬底片一面制作背面电极;然后进行表面化学清洗;再将石墨烯转移至磷化铟片上;最后在石墨烯上制作正面电极。本发明的石墨烯/磷化铟太阳电池利用石墨烯材料的高透光性及高导电性,结合磷化铟优异的半导体性质,所制备的太阳电池具有高转化效率,且本发明的制备方法工艺简单、成本较低。

Description

一种石墨烯/磷化铟太阳电池及其制备方法
技术领域
本发明涉及一种太阳电池及其制备方法,尤其涉及一种石墨烯/磷化铟太阳电池及其制备方法,属于光伏太阳电池能源技术领域。
背景技术
近年来,太阳电池作为一种重要的可再生能源,引起了研究和产业界的广泛关注。其中,硅基太阳电池,特别是晶体硅太阳电池占据市场~90%的份额。但与常规发电相比,太阳电池发电成本仍然较高,限制了地面大规模应用。太阳电池发电成本较高的原因之一是电池制备成本较高,另外一个原因是其光电转化效率仍有待提高。
石墨烯材料在2004年首次被发现并制备出来以后,更多的研究表明石墨烯材料具有优异的电学、光学和机械性质,如极高的载流子迁移率、高透光率、高的杨氏模量和柔韧性等。这些独特的性质使石墨烯有可能广泛地应用于光伏发电领域。目前,已有研究者利用石墨烯以及硅材料形成的异质结做成太阳电池,测得最高转化效率14.5%。这个效率与目前主流单晶硅太阳电池的效率18.5%~20.0%相比还有待提高。对于太阳电池应用来说,硅材料禁带宽度较窄,同时是间接禁带,不是最理想的基础材料。磷化铟是直接带隙材料,其禁带宽度最接近于太阳光谱的最优值(1.34ev),此外,磷化铟材料制备的太阳电池比硅和砷化镓更能够有效抵抗空间辐射损伤。而传统的磷化铟太阳电池制备工艺复杂,成本高昂,难以获得大范围推广。
发明内容
本发明的目的在于提供一种光电转化效率高且制备工艺简单的石墨烯/磷化铟太阳电池及其制备方法。
本发明的石墨烯/磷化铟太阳电池自下而上依次有背面电极、n型掺杂或p型掺杂的磷化铟层、石墨烯层和正面电极组成,所述的石墨烯层中石墨烯为1~10层。
制备上述的石墨烯/磷化铟太阳电池的方法包括如下步骤:
1)在洁净的n型掺杂或p型掺杂磷化铟片的一面制作背面电极;
2)将步骤1)所得磷化铟片在化学清洗液中浸泡5s~30m进行表面清洗,取出并干燥;
3)将石墨烯转移至步骤2)所得的磷化铟片的另一面上;
4)在石墨烯上制作正面电极。
上述技术方案中,所述的石墨烯通常为1~10层。
所述的背面电极可以是金、钯、银、钛、铬、镍和铂中的一种或者几种的复合电极。
所述的化学清洗液可以为HCl、HNO3、H2SO4、H2O2和HF中的一种或几种混合的水溶液或者NH3·H2O、KOH和NaOH中的一种或几种混合的水溶液。
所述的正面电极可以是金、钯、银、钛、铬、镍和铂中的一种或者几种的复合电极。
本发明与现有技术相比具有的有益效果是:
1、与石墨烯/硅太阳电池相比,石墨烯/磷化铟太阳电池可以获得更高的开路电压及转化效率,且其抗辐射能力更强;
2、与常规太阳电池相比,本发明的石墨烯/磷化铟太阳电池制备工艺简单、成本低。
附图说明:
图1为石墨烯/磷化铟太阳电池的结构示意图;
图2 为石墨烯/磷化铟异质结的能带示意图。
具体实施方式
下面结合附图和具体实施例对本发明做进一步说明。
参照图1,本发明的石墨烯/磷化铟太阳电池自下而上依次有背面电极1、磷化铟层2、石墨烯层3和正面电极4,石墨烯与磷化铟异质结的能带结构示意图如图2所示。
实施例1:
1)在p型磷化铟片一面利用电子束蒸发法沉积金电极;
2)将得到的样品浸入质量浓度10%的NH3·H2O水溶液中进行表面清洗,10min后取出并干燥;
3)将单层石墨烯转移至经过清洗的磷化铟片的另一面上;
5)在石墨烯上利用热蒸发工艺沉积银电极得到石墨烯/磷化铟太阳电池。
实施例2:
1)在n型磷化铟片一面利用磁控溅射沉积铬电极;
2)将得到的样品浸入质量浓度20%的HCl水溶液中进行表面清洗,30min后取出并干燥;
3)将10层石墨烯转移至经过清洗的磷化铟片的另一面上;
5)在石墨烯上利用热蒸发工艺沉积镍电极得到石墨烯/磷化铟太阳电池。
实施例3:
1)在n型磷化铟片一面利用磁控溅射沉积铬/金电极;
2)将得到的样品浸入质量浓度5%的H2SO4水溶液中进行表面清洗,10min后取出并干燥;
3)将3层石墨烯转移至经过清洗的磷化铟片的另一面上;
5)在石墨烯上丝网印刷银电极得到石墨烯/磷化铟太阳电池。
实施例4
1)在p型磷化铟片一面利用磁控溅射沉积钛/铂电极;
2)将得到的样品浸入质量浓度10%的H2SO4和质量浓度10%的H2O2以体积比1:1混合的水溶液中进行表面清洗,10min后取出并干燥;
3)将6层石墨烯转移至经过清洗的磷化铟片的另一面上;
4)在石墨烯上磁控溅射钛/镍电极得到石墨烯/磷化铟太阳电池。
实施例5
1)在p型磷化铟片一面利用电子束蒸发沉积金/钛/铂电极;
2)将得到的样品浸入质量浓度均为15%的HNO3、H2SO4和H2O2以体积比1:1:1混合的水溶液中进行表面清洗,5s后取出并干燥;
3)将2层石墨烯转移至经过清洗的磷化铟片的另一面上;
4)在石墨烯上磁控溅射银/镍电极得到石墨烯/磷化铟太阳电池。
实施例6
1)在n型磷化铟片一面利用热蒸发沉积银/铬/镍电极;
2)将得到的样品浸入质量浓度为20%的NH3·H2O和质量浓度为15%的KOH以体积比2:1混合的水溶液中进行表面清洗,15min后取出并干燥;
3)将8层石墨烯转移至经过清洗的磷化铟片的另一面上;
4)在石墨烯上电子束蒸发沉积金/钯电极得到石墨烯/磷化铟太阳电池。

Claims (6)

1.一种石墨烯/磷化铟太阳电池,其特征在于自下而上依次有背面电极(1)、n型掺杂或p型掺杂的磷化铟层(2)、石墨烯层(3)和正面电极(4)组成,所述的石墨烯层(3)中石墨烯为1~10层。
2.制备权利要求1所述的石墨烯/磷化铟太阳电池的方法,其特征在于该方法包括如下步骤:
1)在洁净的n型掺杂或p型掺杂磷化铟片的一面制作背面电极;
2)将步骤1)所得磷化铟片在化学清洗液中浸泡5s~30m进行表面清洗,取出并干燥;
3)将石墨烯转移至步骤2)所得的磷化铟片的另一面上;
4)在石墨烯上制作正面电极。
3.根据权利要求2所述的石墨烯/磷化铟太阳电池的制备方法,其特征在于所述的石墨烯为1~10层。
4.根据权利要求2所述的石墨烯/磷化铟太阳电池的制备方法,其特征在于所述的背面电极是金、钯、银、钛、铬、镍和铂中的一种或者几种的复合电极。
5.根据权利要求2所述的石墨烯/磷化铟太阳电池的制备方法,其特征在于所述的化学清洗液为HCl、HNO3、H2SO4、H2O2和HF中的一种或几种混合的水溶液或者NH3·H2O、KOH和NaOH中的一种或几种混合的水溶液。
6.根据权利要求2所述的石墨烯/磷化铟太阳电池的制备方法,其特征在于所述的正面电极是金、钯、银、钛、铬、镍和铂中的一种或者几种的复合电极。
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