CN104576804A - Graphene/indium phosphide solar cell and preparation method thereof - Google Patents
Graphene/indium phosphide solar cell and preparation method thereof Download PDFInfo
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- CN104576804A CN104576804A CN201410830593.4A CN201410830593A CN104576804A CN 104576804 A CN104576804 A CN 104576804A CN 201410830593 A CN201410830593 A CN 201410830593A CN 104576804 A CN104576804 A CN 104576804A
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- graphene
- solar cell
- indium phosphide
- preparation
- indium
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 59
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 54
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a graphene/indium phosphide solar cell and a preparation method thereof. The graphene/indium phosphide solar cell comprises front electrodes, a graphene layer, an indium phosphide substrate and a back electrode sequentially from top to bottom. The preparation method of the graphene/indium phosphide solar cell comprises steps as follows: firstly, the back electrode is produced on one side of the indium phosphide substrate; then surface chemical cleaning is performed; graphene is transferred to the indium phosphide substrate; finally, the front electrodes are produced on the graphene. The high light transmission and the high electrical conductivity of a graphene material are utilized, and the excellent semiconductor property of indium phosphide is combined, so that the prepared solar cell is high in conversion efficiency; besides, the preparation method is simple in technology and lower in cost.
Description
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, particularly relate to a kind of Graphene/indium phosphide solar cell and preparation method thereof, belong to photovoltaic solar battery power technical field.
Background technology
In recent years, solar cell, as a kind of important regenerative resource, causes the extensive concern of research and industrial circle.Wherein, silica-based solar cell, the particularly share of crystal-silicon solar cell occuping market ~ 90%.But compared with conventional power generation usage, solar cell cost of electricity-generating is still higher, limits ground large-scale application.One of reason that solar cell cost of electricity-generating is higher is that battery preparation cost is higher, and another one reason is that its electricity conversion still has much room for improvement.
Grapheme material to be found and after preparing, more research shows that grapheme material has excellent electricity, optics and engineering properties, as high carrier mobility, high transmission rate, high Young's modulus and pliability etc. for 2004 first.The character of these uniquenesses makes Graphene likely be widely used in field of photovoltaic power generation.At present, the heterojunction that existing researcher utilizes Graphene and silicon materials to be formed makes solar cell, records the highest transformation efficiency 14.5%.This efficiency need to improve compared with the efficiency 18.5% ~ 20.0% of current main flow single crystal silicon solar cell.For solar cell application, silicon materials energy gap is narrower, is indirect forbidden band simultaneously, is not optimal basic material.Indium phosphide is direct band gap material, and its energy gap is closest to the optimal value (1.34ev) of solar spectrum, and in addition, solar cell prepared by indium phosphide more effectively can resist space radiation damage than silicon and GaAs.And traditional indium phosphide solar cell complicated process of preparation, with high costs, be difficult to obtain and promote on a large scale.
Summary of the invention
The object of the present invention is to provide a kind of electricity conversion high and simple Graphene/indium phosphide solar cell of preparation technology and preparation method thereof.
Phosphorization phosphide indium layer, graphene layer and front electrode that Graphene/indium phosphide solar cell of the present invention is adulterated by backplate, N-shaped doping or p-type from bottom to top successively form, and in described graphene layer, Graphene is 1 ~ 10 layer.
The method preparing above-mentioned Graphene/indium phosphide solar cell comprises the steps:
1) backplate is made in the N-shaped doping of cleaning or the one side of p-type doping phosphatization indium sheet;
2) step 1) gained phosphatization indium sheet is soaked 5s ~ 30m in chemical cleaning solution and carry out surface clean, take out and drying;
3) Graphene is transferred to step 2) on the another side of the phosphatization indium sheet of gained;
4) on Graphene, front electrode is made.
In technique scheme, described Graphene is generally 1 ~ 10 layer.
Described backplate can be one or several the combination electrode in gold, palladium, silver, titanium, chromium, nickel and platinum.
Described chemical cleaning solution can be HCl, HNO
3, H
2sO
4, H
2o
2with the aqueous solution or the NH of one or more mixing in HF
3h
2the aqueous solution of one or more mixing in O, KOH and NaOH.
Described front electrode can be one or several the combination electrode in gold, palladium, silver, titanium, chromium, nickel and platinum.
The beneficial effect that the present invention compared with prior art has is:
1, compared with graphene/silicon solar cell, Graphene/indium phosphide solar cell can obtain higher open circuit voltage and transformation efficiency, and its capability of resistance to radiation is stronger;
2, compared with conventional solar cell, Graphene of the present invention/indium phosphide solar cell preparation technology is simple, cost is low.
accompanying drawing illustrates:
Fig. 1 is the structural representation of Graphene/indium phosphide solar cell;
Fig. 2 be Graphene/heterojunction of indium phosphide can be with schematic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
With reference to Fig. 1, Graphene/indium phosphide solar cell of the present invention has backplate 1, phosphorization phosphide indium layer 2, graphene layer 3 and front electrode 4 from bottom to top successively, and the band structure schematic diagram of Graphene and heterojunction of indium phosphide as shown in Figure 2.
Embodiment 1:
1) electron-beam vapor deposition method deposited gold electrode is utilized in p-type phosphatization indium sheet one side;
2) sample obtained is immersed the NH of mass concentration 10%
3h
2carry out surface clean in the O aqueous solution, take out after 10min and drying;
3) single-layer graphene is transferred on the another side of the phosphatization indium sheet of cleaning;
5) on Graphene, utilize thermal evaporation process depositing silver electrode to obtain Graphene/indium phosphide solar cell.
Embodiment 2:
1) magnetron sputtering deposition chromium electrode is utilized in N-shaped phosphatization indium sheet one side;
2) sample obtained is immersed in the HCl aqueous solution of mass concentration 20% and carry out surface clean, take out after 30min and drying;
3) 10 layer graphenes are transferred on the another side of the phosphatization indium sheet of cleaning;
5) on Graphene, utilize thermal evaporation process nickel deposited electrode to obtain Graphene/indium phosphide solar cell.
Embodiment 3:
1) magnetron sputtering deposition chromium/gold electrode is utilized in N-shaped phosphatization indium sheet one side;
2) sample obtained is immersed the H of mass concentration 5%
2sO
4carry out surface clean in the aqueous solution, take out after 10min and drying;
3) 3 layer graphenes are transferred on the another side of the phosphatization indium sheet of cleaning;
5) on Graphene, silk screen printing silver electrode obtains Graphene/indium phosphide solar cell.
Embodiment 4
1) magnetron sputtering deposition titanium/platinum electrode is utilized in p-type phosphatization indium sheet one side;
2) sample obtained is immersed the H of mass concentration 10%
2sO
4with the H of mass concentration 10%
2o
2to carry out surface clean in the aqueous solution of volume ratio 1:1 mixing, take out after 10min and drying;
3) 6 layer graphenes are transferred on the another side of the phosphatization indium sheet of cleaning;
4) on Graphene, magnetron sputtering titanium/nickel electrode obtains Graphene/indium phosphide solar cell.
Embodiment 5
1) electron-beam evaporation gold/titanium/platinum electrode is utilized in p-type phosphatization indium sheet one side;
2) sample obtained is immersed the HNO that mass concentration is 15%
3, H
2sO
4and H
2o
2to carry out surface clean in the aqueous solution of volume ratio 1:1:1 mixing, take out after 5s and drying;
3) 2 layer graphenes are transferred on the another side of the phosphatization indium sheet of cleaning;
4) on Graphene, magnetron sputtering silver/nickel electrode obtains Graphene/indium phosphide solar cell.
Embodiment 6
1) thermal evaporation deposition silver/chromium/nickel electrode is utilized in N-shaped phosphatization indium sheet one side;
2) sample obtained being immersed mass concentration is the NH of 20%
3h
2o and mass concentration are carry out surface clean in the aqueous solution that mixes with volume ratio 2:1 of KOH of 15%, take out and dry after 15min;
3) 8 layer graphenes are transferred on the another side of the phosphatization indium sheet of cleaning;
4) on Graphene, electron beam evaporation deposited gold/palladium electrode obtains Graphene/indium phosphide solar cell.
Claims (6)
1. Graphene/indium phosphide solar cell, it is characterized in that there is phosphorization phosphide indium layer (2), graphene layer (3) and front electrode (4) composition that backplate (1), N-shaped adulterate or p-type is adulterated from bottom to top successively, in described graphene layer (3), Graphene is 1 ~ 10 layer.
2. prepare the method for Graphene/indium phosphide solar cell according to claim 1, it is characterized in that the method comprises the steps:
1) backplate is made in the N-shaped doping of cleaning or the one side of p-type doping phosphatization indium sheet;
2) step 1) gained phosphatization indium sheet is soaked 5s ~ 30m in chemical cleaning solution and carry out surface clean, take out and drying;
3) Graphene is transferred to step 2) on the another side of the phosphatization indium sheet of gained;
4) on Graphene, front electrode is made.
3. the preparation method of Graphene/indium phosphide solar cell according to claim 2, is characterized in that described Graphene is 1 ~ 10 layer.
4. the preparation method of Graphene/indium phosphide solar cell according to claim 2, is characterized in that described backplate is one or several the combination electrode in gold, palladium, silver, titanium, chromium, nickel and platinum.
5. the preparation method of Graphene/indium phosphide solar cell according to claim 2, is characterized in that described chemical cleaning solution is HCl, HNO
3, H
2sO
4, H
2o
2with the aqueous solution or the NH of one or more mixing in HF
3h
2the aqueous solution of one or more mixing in O, KOH and NaOH.
6. the preparation method of Graphene/indium phosphide solar cell according to claim 2, is characterized in that described front electrode is one or several the combination electrode in gold, palladium, silver, titanium, chromium, nickel and platinum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410830593.4A CN104576804A (en) | 2014-12-29 | 2014-12-29 | Graphene/indium phosphide solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410830593.4A CN104576804A (en) | 2014-12-29 | 2014-12-29 | Graphene/indium phosphide solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104576804A true CN104576804A (en) | 2015-04-29 |
Family
ID=53092436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410830593.4A Pending CN104576804A (en) | 2014-12-29 | 2014-12-29 | Graphene/indium phosphide solar cell and preparation method thereof |
Country Status (1)
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| CN (1) | CN104576804A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786482A (en) * | 2018-12-13 | 2019-05-21 | 华南理工大学 | A kind of schottky junction solar cell and preparation method thereof comprising electron transfer layer |
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|---|---|---|---|---|
| US20110129675A1 (en) * | 2009-12-01 | 2011-06-02 | Samsung Electronics Co., Ltd. | Material including graphene and an inorganic material and method of manufacturing the material |
| CN102263144A (en) * | 2011-07-29 | 2011-11-30 | 清华大学 | Semiconductor heterojunction solar cell based on bionic moth eye and manufacturing method thereof |
| CN103311323A (en) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | Graphene/silicon solar cell and manufacturing method thereof |
| CN104241415A (en) * | 2014-09-10 | 2014-12-24 | 浙江大学 | Graphene/gallium arsenide solar cell and manufacturing method thereof |
-
2014
- 2014-12-29 CN CN201410830593.4A patent/CN104576804A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110129675A1 (en) * | 2009-12-01 | 2011-06-02 | Samsung Electronics Co., Ltd. | Material including graphene and an inorganic material and method of manufacturing the material |
| CN102263144A (en) * | 2011-07-29 | 2011-11-30 | 清华大学 | Semiconductor heterojunction solar cell based on bionic moth eye and manufacturing method thereof |
| CN103311323A (en) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | Graphene/silicon solar cell and manufacturing method thereof |
| CN104241415A (en) * | 2014-09-10 | 2014-12-24 | 浙江大学 | Graphene/gallium arsenide solar cell and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786482A (en) * | 2018-12-13 | 2019-05-21 | 华南理工大学 | A kind of schottky junction solar cell and preparation method thereof comprising electron transfer layer |
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Application publication date: 20150429 |