CN104576267A - Surface conduction electron emission source structure and manufacturing method of surface conduction electron emission source structure - Google Patents
Surface conduction electron emission source structure and manufacturing method of surface conduction electron emission source structure Download PDFInfo
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- CN104576267A CN104576267A CN201510036036.XA CN201510036036A CN104576267A CN 104576267 A CN104576267 A CN 104576267A CN 201510036036 A CN201510036036 A CN 201510036036A CN 104576267 A CN104576267 A CN 104576267A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
Abstract
The invention discloses a surface conduction electron emission source structure and a manufacturing method of the surface conduction electron emission source structure, and belongs to the technical field of flat panel display manufacturing. The surface conduction electron emission source structure comprises a pair of symmetric device electrodes deposited on a substrate. An electron emission thin film is deposited on the device electrodes, and a nanometer crack is formed in the electron emission thin film. An 8-micrometer-to-20-micrometer electrode gap is formed between the symmetric device electrodes, and a dielectric filling layer and/or protruding dielectric are/is arranged in the electrode gap. The manufacturing method includes the steps that a protrusion is firstly built in the middle of the electrode gap; then a conductive film is manufactured on the protrusion; according to the characteristic that materials of the protrusion are poor in heat conductivity and the difference between the portion, covering the protrusion, of the conductive film and the other portions of the conductive film in geometric position, more joule heat is generated at the portion, covering the protrusion, of the conductive film during power-on forming, and the nanometer crack can be formed at the protrusion. Controllable manufacturing of the nanometer crack in position can be achieved, and the electron field emission efficiency can be improved.
Description
Technical field
The invention belongs to flat-panel monitor manufacturing technology field, relate to a kind of surface-conduction electron emission source structure and preparation method thereof, particularly a kind of can the surface-conduction electron emission source structure and preparation method thereof of control surface conduction electron-emitter film nanometer cracking initiation position.
Background technology
The surface conduction electron emission displaying part (Surface-conductionElectron-emitter Display, SED) that CANON proposes, as the one of FED, its display effect very outstanding in current flat-panel display device.
The video picture principle of SED and traditional cathode-ray picture tube (Cathode Ray Tube, CRT) similar, what be different from CRT is, SED will scribble the glass plate of fluorescent material and be covered with the glass film plates laid parallel of exhibiting high surface conduction electron emission source, such structure the thickness of SED can be done quite thin, be easy to panelized, maximization; Meanwhile, the energy consumption of SED is also lower.During SED work, the device electrode of minus plate applies the voltage of one tens volts, then produce high field at the crack place of conducting film strong, due to tunnel effect, tunelling electrons flies to the other end from the one end in crack, thus produces surface conductive electric current.The a part of impact fluorescence powder in the electronics of cathode emission can be attracted after the anode of positive plate applies high pressure luminous.
The core of surface-conduction-electron emission display is surface-conduction electron emission source, and the technological difficulties preparing this emission source are on conductive film, how to form unified nanoscale crack, realizes tunelling electrons and launches.Canon Inc. develops through years of researches, by carrying out " adding electric forming " technique (electro-forming process) to film and " activation " technique (activation process) obtains nanoscale gap.But, the general principle that the technique that " adds electric forming " is formed utilizes the Joule heat powering up generation to heat " blowing " electron emission film, its position and width have randomness, consistency between each electron emission unit is poor, have impact on the performance of electron emission source, make the current density of surface-conduction electron emission source and electronic transmitting efficiency lower.
Summary of the invention
In order to overcome the defect that above-mentioned prior art exists, the object of the present invention is to provide a kind of surface-conduction electron emission source structure and preparation method thereof; This structure can control the forming position in electron emission film nanometer crack, improves the electronic transmitting efficiency of electron emission source; The method is simple to operate, low for equipment requirements, easily realizes.
The present invention is achieved through the following technical solutions:
A kind of surface-conduction electron emission source structure, comprises the device electrode of a pair symmetry be deposited on substrate, device electrode deposits electron emission film, electron emission film exists nanometer crack; Between the device electrode of symmetry, be provided with the electrode gap of 8 ~ 20 μm, in this electrode gap, be provided with dielectric fill layer and/or projection dielectric.
The thickness of described device electrode is 100 ~ 200nm; And device electrode is made up of one or more materials in platinum, copper, silver, nickel, chromium.
The thickness of described electron emission film is 30 ~ 100nm; And electron emission film is made up of palladium oxide or zinc oxide.
The thickness of described dielectric fill layer is 50 ~ 200nm; And Filled Dielectrics layer adopts silicon dioxide or hafnium oxide to make.
The length of the dielectric length of described projection and electron emission film is suitable; The dielectric width of projection is 2 ~ 5 μm, and thickness is 20 ~ 250nm.
When being provided with dielectric fill layer and projection dielectric in electrode gap, projection dielectric is placed in above dielectric fill layer or is coated on dielectric fill layer inside.
When projection dielectric is placed in above dielectric fill layer, the dielectric thickness of projection is 20 ~ 50nm.
A manufacture method for surface-conduction electron emission source structure, comprises the following steps:
1) adopt magnetron sputtering method on substrate, deposit some groups of metal electrodes, form the device electrode of a pair symmetry, between symmetrical device electrode, form the electrode gap of 8 ~ 20 μm;
2) magnetron sputtering method is adopted between electrode gap, to make dielectric fill layer that thickness is 50 ~ 200nm and/or between electrode gap, make the projection dielectric that thickness is 20 ~ 250nm;
3) adopt magnetron sputtering method device electrode between make electron emission film;
4) electric forming technology is added to electron emission film employing and obtain nanoscale crack.
The thickness of described device electrode is 100 ~ 200nm; And device electrode is made up of one or more materials in platinum, copper, silver, nickel, chromium; The thickness of described electron emission film is 30 ~ 100nm; And electron emission film is made up of palladium oxide or zinc oxide.
When being provided with dielectric fill layer and projection dielectric in electrode gap, projection dielectric is placed in above dielectric fill layer or is coated on dielectric fill layer inside;
When projection dielectric is placed in above dielectric fill layer, the dielectric thickness of projection is 20 ~ 50nm.
Compared with prior art, the present invention has following useful technique effect:
Surface-conduction electron emission source structure of the present invention, is made up of the device electrode be produced on substrate, the dielectric fill layer of filling device electrode gap, projection dielectric and electron emission film.In the electrode gap that dielectric fill layer and/or projection dielectric filler are formed between device electrode, utilize the feature of projection medium heat conduction difference and the otherness covered on jut conducting film and other partially conductive film geometric positions makes to cover the conducting film of jut when " adding electric forming ", produce more Joule heat, make nanometer crack can form the controlled making realizing nanometer crack location in protruding part, and then by the padded surface-conduction electron emission film of filling between electrode gap, shorten the distance between electron emission position and positive plate, make electron tunneling launch after easier scattering and attract by anode, effectively increase the ratio of tunelling electrons directive anode, thus improve field emission electron efficiency.
Side of the present invention adopts " adding electric forming " technique to make nanometer crack, step is simple, require low to instrument and equipment, first in the middle of electrode gap, build projection, and then conducting film is produced in projection, utilize the feature of bump material poor thermal conductivity and the otherness covered on jut conducting film and other partially conductive film geometric positions makes to cover the conducting film of jut when " adding electric forming ", produce more Joule heat, nanometer crack can be formed in protruding part, realize the controlled making of nanometer crack location.The method stability is strong, is easy to control, and is applicable to scale and amplifies production.
Accompanying drawing explanation
Fig. 1 is SED theory structure schematic diagram;
Fig. 2-1 is a kind of typical structure front view of the surface-conduction electron emission source of prior art;
Fig. 2-2 is the vertical view of Fig. 2-1;
Fig. 3-1 is a kind of desirable efficient surface conduction electron emission source structural front view disclosed by the invention;
Fig. 3-2 is the vertical view of Fig. 3-1;
Fig. 4-1 is surface-conduction electron emission source structural front view padded in the middle of the embodiment of the present invention 1;
Fig. 4-2 is the vertical view of Fig. 4-1;
Fig. 5-1 is the surface-conduction electron emission source structural front view of the monolateral filling of the embodiment of the present invention 2;
Fig. 5-2 is the vertical view of Fig. 5-1;
Fig. 6-1 is that the embodiment of the present invention 3 fills middle padded surface-conduction electron emission source structural front view;
Fig. 6-2 is the vertical view of Fig. 6-1;
Fig. 7-1 is the padded surface-conduction electron emission source structural front view in centre that the embodiment of the present invention 4 is filled;
Fig. 7-2 is the vertical view of Fig. 7-1.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, and the explanation of the invention is not limited.
First, introduce SED principle, see the structure of Fig. 1, a SED display pixel, SED contains infrabasal plate 100 and upper substrate 110, and each pixel cell comprises RGB three sub-pixels, and electron emission source 130 is produced in lower glass substrate 100.Surface conduction electron emission electron source comprises device electrode 150 and electron emission film 250.SED display device also comprises a high voltage anode 170 and cathode device voltage 160.When applying direct voltage on device electrode 150, surface conduction electron emission film 250 meeting electron emission, under the voltage of high voltage anode 170 accelerates, electronics impact fluorescence powder 180 is luminous.
Surface-conduction electron emission source structure of the present invention, comprises the device electrode 150 of deposition a pair symmetry on the substrate 100, device electrode 150 deposits electron emission film 250, electron emission film offers nanoscale crack 260; Between the device electrode of symmetry, be provided with the electrode gap of 8 ~ 20 μm, in this electrode gap, be provided with dielectric fill layer 300 and/or projection dielectric 310.
The thickness of described device electrode 150 is 100 ~ 200nm; And device electrode 150 is made up of one or more materials in platinum, copper, silver, nickel, chromium.The thickness of described electron emission film 250 is 30 ~ 100nm; And electron emission film 250 is made up of palladium oxide.
The thickness of described dielectric fill layer 300 is 50 ~ 200nm; Dielectric fill layer Material selec-tion is the insulating material good with substrate adhesion, as silicon dioxide, hafnium oxide etc.Its physical dimension, comprises length and width, thickness, depends on the thickness of gap size between device electrode and device electrode.
The length of described projection dielectric 310 is suitable with the length of electron emission film 250, and width is 2 ~ 5 μm, and thickness is 20 ~ 250nm.The Material selec-tion of projection dielectric 310 is better with filled media adhesiveness, and the material of poor thermal conductivity, as silicon dioxide, alumina silicate etc.
When being provided with dielectric fill layer 300 and projection dielectric 310 in electrode gap, projection dielectric 310 is placed in above dielectric fill layer 300 or is coated on dielectric fill layer 300 inside;
When above projection medium 310 is placed in dielectric fill layer 300, the thickness 20 ~ 50nm of projection dielectric 310.
Comparative example:
See Fig. 2-1 and Fig. 2-2, be a kind of typical structure schematic diagram of the surface-conduction electron emission source of prior art, surface conduction electron emission electron source is produced on infrabasal plate 100.Electron emission source comprises two device electrodes 150 and surface conduction electron emission film 250.
Embodiment 1
See Fig. 4-1 and Fig. 4-2, the surface-conduction electron emission source structure that a kind of centre is padded, comprises two device electrodes 150, is positioned at the projection dielectric 310 in the middle of electrode gap and electron emission film 250.
The manufacturing process of this structure is:
1) sputter some groups of metal electrodes 150 on the substrate 100 by methods such as magnetron sputterings, form electrod-array, thickness of electrode is 100 ~ 200nm, has the gap of 8 ~ 20 μm between electrode;
2) between device electrode 150 gap, sputtering one deck width by methods such as magnetron sputterings is 2 ~ 5 μm, and the length of length and surface conduction electron emission film 250 is suitable, the projection dielectric 310 of thickness 100 ~ 150nm;
3) by methods such as magnetron sputterings at device electrode 150 sputtering surface conduction electron-emitter films 250, electron emission film 250 thickness is 30 ~ 100nm;
4) " adding electric forming " PROCESS FOR TREATMENT is carried out to electron emission film 250, form nanometer crack 260.
Embodiment 2
See Fig. 5-1 and Fig. 5-2, a kind of monolateral padded surface-conduction electron emission source structure, its structure comprises two device electrodes 150, has and is connected with electrode, is filled with dielectric fill layer 300 and the electron emission film 250 in partial electrode gap.
The manufacturing process of this structure is:
1) sputter some groups of metal electrodes 150 on the substrate 100 by methods such as magnetron sputterings, form electrod-array, thickness of electrode is 100 ~ 200nm, has the gap of 8 ~ 20 μm between electrode;
2) between device electrode 150 gap, sputter the thickness dielectric fill layer 300 suitable with thickness of electrode by methods such as magnetron sputterings, filling dielectric packed layer 300 width is 4 ~ 8 μm, and its side is connected with electrode one end, and opposite side is arranged in electrode gap.
3) by methods such as magnetron sputterings at device electrode 150 sputtering surface conduction electron-emitter films 250, electron emission film 250 thickness is 30 ~ 100nm;
4) " adding electric forming " PROCESS FOR TREATMENT is carried out to electron emission film 250, form nanometer crack 260.
Embodiment 3
See Fig. 6-1 and Fig. 6-2, the surface-conduction electron emission source structure that a kind of centre of filling is padded, comprises two device electrodes 150, dielectric fill layer 300, projection dielectric 310 and electron emission film 250.
First make dielectric fill layer 300 during making, then make projection dielectric 310, concrete making step is:
1) sputter some groups of metal electrodes 150 on the substrate 100 by methods such as magnetron sputterings, form electrod-array, thickness of electrode is 100 ~ 200nm, has the gap of 8 ~ 20 μm between electrode;
2) dielectric fill layer 300 sputtering thickness suitable with thickness of electrode by methods such as magnetron sputterings between device electrode 150 gap fills electrode gap;
3) between device electrode 150 gap, sputtering one deck width by methods such as magnetron sputterings is 2 ~ 5 μm, and length is suitable with surface conduction electron emission film 250 length, and thickness is the projection dielectric 310 of 20 ~ 50nm;
4) by methods such as magnetron sputterings at device electrode 150 sputtering surface conduction electron-emitter films 250, the thickness of electron emission film 250 is 30 ~ 100nm.
5) " adding electric forming " PROCESS FOR TREATMENT is carried out to electron emission film 250, form nanometer crack 260.
Embodiment 4
See Fig. 7-1 and Fig. 7-2, the surface-conduction electron emission source structure that a kind of centre of filling is padded, comprises two device electrodes 150, dielectric fill layer 300, projection dielectric 310 and electron emission film 250.
Manufacturing process is first make projection dielectric 310, then make dielectric fill layer 300, and concrete making step is:
1) sputter some groups of metal electrodes 150 on the substrate 100 by methods such as magnetron sputterings, form electrod-array, thickness of electrode is 100 ~ 200nm, has the gap of 8 ~ 20 μm between electrode;
2) between device electrode 150 gap, sputtering one deck width by methods such as magnetron sputterings is 2 ~ 5 μm, and length is suitable with surface conduction electron emission film 250 length, the projection dielectric 310 of thickness 100 ~ 150nm;
3) dielectric fill layer 300 sputtering thickness suitable with thickness of electrode by methods such as magnetron sputterings between device electrode 150 gap fills electrode gap.
4) by methods such as magnetron sputterings at device electrode 150 sputtering surface conduction electron-emitter films 250, electron emission film 250 thickness is 30 ~ 100nm.
5) " adding electric forming " PROCESS FOR TREATMENT is carried out to electron emission film 250, form nanometer crack 260.
See Fig. 3-1 and Fig. 3-2, the surface-conduction electron emission source structure that a kind of desirable centre disclosed in this invention is padded, its structure comprises two device electrodes 150, is filled in the dielectric fill layer 300 with center protrusion of electrode gap, and electron emission film 250.
In sum, novel surface-conduction electron emission source structure of the present invention comprises device electrode, dielectric fill layer, projection dielectric and electron emission film.The method making nanometer crack in prior art generally has focused ion beam method (FIB) and hydrogen absorption technique etc., focused ion beam method is very high to the requirement of instrument and equipment, need to use expensive instrument and equipment, the realization of hydrogen absorption technique needs complicated preparation process and method.Manufacture method of the present invention is first in the middle of electrode gap, build projection, and then conducting film is produced in projection, utilize the feature of bump material poor thermal conductivity and the otherness covered on jut conducting film and other partially conductive film geometric positions makes to cover the conducting film of jut when " adding electric forming ", produce more Joule heat, nanometer crack can be formed in protruding part, realize the controlled making of nanometer crack location, and then by the padded surface-conduction electron emission film of filling between electrode gap, shorten the distance of electron emission position and positive plate, improve the ratio of scattering anode in tunelling electrons, thus improve field emission electron efficiency.
Claims (10)
1. a surface-conduction electron emission source structure, it is characterized in that, comprise the device electrode (150) of a pair symmetry be deposited on substrate (100), device electrode (150) deposits electron emission film (250), and electron emission film is provided with nanometer crack (260); Between the device electrode of symmetry, be provided with the electrode gap of 8 ~ 20 μm, in this electrode gap, be provided with dielectric fill layer (300) and/or projection dielectric (310).
2. a kind of surface-conduction electron emission source structure according to claim 1, is characterized in that, the thickness of described device electrode (150) is 100 ~ 200nm; And device electrode (150) is made up of one or more materials in platinum, copper, silver, nickel, chromium.
3. a kind of surface-conduction electron emission source structure according to claim 1, is characterized in that, the thickness of described electron emission film (250) is 30 ~ 100nm; And electron emission film (250) is made up of palladium oxide or zinc oxide.
4. a kind of surface-conduction electron emission source structure according to claim 1, is characterized in that, the thickness of described dielectric fill layer (300) is 50 ~ 200nm; And Filled Dielectrics layer (300) adopts silicon dioxide or hafnium oxide to make.
5. a kind of surface-conduction electron emission source structure according to claim 1, is characterized in that, the length of described projection dielectric (310) is suitable with the length of electron emission film (250); The width of projection dielectric (310) is 2 ~ 5 μm, and thickness is 20 ~ 250nm.
6. a kind of surface-conduction electron emission source structure according to claim 1, it is characterized in that, when being provided with dielectric fill layer (300) and projection dielectric (310) in electrode gap, projection dielectric (310) is placed in dielectric fill layer (300) top or is coated on dielectric fill layer (300) inner.
7. a kind of surface-conduction electron emission source structure according to claim 6, it is characterized in that, when projection dielectric (310) is placed in dielectric fill layer (300) top, the thickness of projection dielectric (310) is 20 ~ 50nm.
8. a manufacture method for surface-conduction electron emission source structure, is characterized in that, comprises the following steps:
1) adopt magnetron sputtering method at the upper deposition of substrate (100) some groups of metal electrodes, form the device electrode (150) of a pair symmetry, between symmetrical device electrode (150), form the electrode gap of 8 ~ 20 μm;
2) magnetron sputtering method is adopted between electrode gap, to make dielectric fill layer (300) that thickness is 50 ~ 200nm and/or between electrode gap, make the projection dielectric (310) that thickness is 20 ~ 250nm;
3) adopt magnetron sputtering method device electrode (150) between make electron emission film (250);
4) electric forming technology is added to electron emission film (250) employing and obtain nanoscale crack (260).
9. the manufacture method of a kind of surface-conduction electron emission source structure according to claim 8, is characterized in that, the thickness of described device electrode (150) is 100 ~ 200nm; And device electrode (150) is made up of one or more materials in platinum, copper, silver, nickel, chromium; The thickness of described electron emission film (250) is 30 ~ 100nm; And electron emission film (250) is made up of palladium oxide or zinc oxide.
10. the manufacture method of a kind of surface-conduction electron emission source structure according to claim 8, it is characterized in that, when being provided with dielectric fill layer (300) and projection dielectric (310) in electrode gap, projection dielectric (310) is placed in dielectric fill layer (300) top or is coated on dielectric fill layer (300) inner;
When projection dielectric (310) is placed in dielectric fill layer (300) top, the thickness of projection dielectric (310) is 20 ~ 50nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355529A (en) * | 2015-11-19 | 2016-02-24 | 西安交通大学 | Multi-layer surface conduction electron emission source structure and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020057637A (en) * | 2001-01-03 | 2002-07-12 | 엘지전자 주식회사 | Manufacturing method for surface conduction electron emission display |
| JP2005063779A (en) * | 2003-08-11 | 2005-03-10 | Canon Inc | Process of manufacture of electron emitting element, electron source, and image forming apparatus |
| JP2005259551A (en) * | 2004-03-12 | 2005-09-22 | Canon Inc | Manufacturing method for electron emission element, electron source and image forming device |
| JP2005268167A (en) * | 2004-03-22 | 2005-09-29 | Canon Inc | Electron-emitting element, and manufacturing method of electron source and image forming device |
| CN101814408A (en) * | 2010-04-07 | 2010-08-25 | 西安交通大学 | Manufacturing method of surface-conduction electron emission source based on nano-imprint |
| JP2011018512A (en) * | 2009-07-08 | 2011-01-27 | Nec Corp | Emitter electrode, method for manufacturing the emitter electrode, and lighting system |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
-
2015
- 2015-01-23 CN CN201510036036.XA patent/CN104576267B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020057637A (en) * | 2001-01-03 | 2002-07-12 | 엘지전자 주식회사 | Manufacturing method for surface conduction electron emission display |
| JP2005063779A (en) * | 2003-08-11 | 2005-03-10 | Canon Inc | Process of manufacture of electron emitting element, electron source, and image forming apparatus |
| JP2005259551A (en) * | 2004-03-12 | 2005-09-22 | Canon Inc | Manufacturing method for electron emission element, electron source and image forming device |
| JP2005268167A (en) * | 2004-03-22 | 2005-09-29 | Canon Inc | Electron-emitting element, and manufacturing method of electron source and image forming device |
| JP2011018512A (en) * | 2009-07-08 | 2011-01-27 | Nec Corp | Emitter electrode, method for manufacturing the emitter electrode, and lighting system |
| CN101814408A (en) * | 2010-04-07 | 2010-08-25 | 西安交通大学 | Manufacturing method of surface-conduction electron emission source based on nano-imprint |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
Non-Patent Citations (4)
| Title |
|---|
| BANDDAO CHEN等: ""Thermal shock induced nanocraclc as high efficiency surface conduction electron emitter"", 《APPLIED SURFACE SCIENCE》 * |
| BANGDAO CHEN等: ""A Crater Shape Nano-crack for Surface Conduction Electron Emitters"", 《25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE》 * |
| BANGDAO CHEN等: ""Thermal Stress induce Formation Nanogaps in Surface Conduction Electron Emitter"", 《PHYSICS PROCEDIA》 * |
| 杨小艳等: ""纳米裂缝位置可控的表面传导电子发射薄膜"", 《液晶与显示》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355529A (en) * | 2015-11-19 | 2016-02-24 | 西安交通大学 | Multi-layer surface conduction electron emission source structure and preparation method thereof |
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