CN101483129B - Surface electronic field emission tripolar construction and production method thereof - Google Patents
Surface electronic field emission tripolar construction and production method thereof Download PDFInfo
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- CN101483129B CN101483129B CN200910024472XA CN200910024472A CN101483129B CN 101483129 B CN101483129 B CN 101483129B CN 200910024472X A CN200910024472X A CN 200910024472XA CN 200910024472 A CN200910024472 A CN 200910024472A CN 101483129 B CN101483129 B CN 101483129B
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Abstract
A surface electron field emission triode structure and preparation method thereof including: a.) adopting printing, sintering, or coating, photolithography, or coating, sintering method to prepare data electrode on the cathode glass substrate, b.) adopting a plane printing or coating method for preparing a plane dielectric layer on the data electrode, and then obtain a straight hole array penetrating the plane dielectric layer by the exposure and corrosion process, c.) printing, sintering, or coating, photolithography on the plane dielectric layer, d). using spraying, coating, spreading or printing method to prepare an electron scattering material layer between the sweeping electrode and the connecting electrode, e.) using spraying, coating, spreading or printing method to prepare a nanometer conductive granular layer on the electron scattering material layer, and ensuring no appearance of short circuit between the line-scan electrodes and connect electrodes, f.) preparing a support body on the dielectric layer, g.) preparing a fluorescent powder layer on one side of the transparent conductive film with a transparent conductive film anode glass substrate.
Description
Technical field
The present invention is a kind of cellular construction of field emission display device, relates to structural design of field emission material in the field emission display device, data electrode, scan electrode and anode and preparation method thereof.
Background technology
At present, field emission display device (FED) is as novel flat-panel display device, and the distance marketization also has a certain distance, has some key technology bottlenecks.Wherein the design of three-stage structure and preparation are key factors that influences field emission display practicability.
Adopt two-level structure can constitute the simplest field-emitter display, and realize the demonstration of video image by the mode of matrix-scanning.In the two-level structure field emission display screen, anode needs high pressure realize high brightness could for the enough energy impact fluorescences of electronics powder on the one hand, anode electrode serves as modulator electrode again on the other hand, connect the peripheral drive circuit chip and can not bear too high voltage, therefore exist between luminosity and the driving voltage and have contradiction, must on the basis of two-level structure, introduce three-stage structure, carry out voltage modulated, by the anodic control luminosity by grid.
In three-stage structure, grid must as close as possible negative electrode, requires grid aperture enough little (generally below 50 microns, the overall structure of visual organ spare and decide) simultaneously, could realize effectively that low-voltage modulates.Because the grid aperture is very little, and the gate distance negative electrode is very near, adopts the very difficult emitter slurry is accurately filled out of method of silk screen printing to be flushed in the grid hole.Also cause emitter to link to each other and short circuit in addition easily with gate electrode.General preparation cathode emission array and protective mulch earlier, and then adopt masking process and precision photolithography prepared deielectric-coating pore structure and gate electrode, open the protective layer of emitter at last.Adopt this method must use repeatedly mask and precision photolithography, contraposition requires harsh, and rate of finished products is lower.Though the protective layer target has the certain protection effect, still can cause the damage of part emitter, influence the display device performance.If in three-stage structure, adopt method direct growth emissive material in the medium fenestra of CVD, though the difficulty that can avoid material to fill because the working temperature of CVD is very high, causes damage to glass substrate easily.
Summary of the invention
Technical problem: the purpose of this invention is to provide a kind of surface electronic field emission tripolar construction and preparation method thereof, the emission of surface electronic field utilizes field emission primary electron and scattered electron, secondary electron etc., can reduce driving voltage effectively.The preparation technology of the three-stage structure that the present invention proposes is simple, and cost of manufacture is cheap.
Technical scheme: at the aforementioned techniques difficult point in traditional three-stage structure, the present invention proposes a kind of surface electronic field emission tertiary structure and preparation method thereof.In this structure, a kind of surface electronic field emission tripolar construction that is proposed, on cathode glass substrate, be coated with data electrode, it on data electrode dielectric layer, dielectric layer is provided with supporter, on supporter, be provided with the anode glass substrate, be provided with anode electrode at the lower surface of anode glass substrate, at the phosphor powder layer that is provided with of anode electrode lower surface; On dielectric layer, be provided with the connection electrode parallel, line scanning electrode and the electron scattering material layer vertical with data electrode with data electrode, width is arranged less than 100 microns gap between connection electrode and the line scanning electrode, the middle part projection of electron scattering material layer is arranged in this gap, both sides cover the top of connection electrode, line scanning electrode, are provided with the conductive nano stratum granulosum on the electron scattering material layer; Be provided with penetrating via interchange data electrode and connection electrode in the dielectric layer.
The electron scattering material layer adopts has better secondary performance, and has the material of the fine structure of rat.The conductive nano particle has better conductance property, and granular size is between tens nanometer is to several microns.
The preparation method of surface electronic field emission tripolar construction is:
A.) on cathode glass substrate, adopt printing, sintering, perhaps plated film, photoetching, method perhaps coated, sintering prepares data electrode,
B.) mode by planographic or plated film prepares the planar medium layer on data electrode, obtains running through the straight hole array of planar medium layer then by exposure and etching process; Perhaps directly prepare the dielectric layer that has vertical channel by silk-screen printing technique,
C.) printing, sintering on the planar medium layer, perhaps plated film, photoetching, method perhaps coated, sintering prepares line scanning electrode and connection electrode simultaneously; Connection electrode is parallel with data electrode, and is conducted by straight hole passage and data electrode, and the insulation vertical mutually of line scanning electrode with data electrode,
D). utilize spraying, plated film, coating or the printing process preparation electron scattering material layer of being expert between scan electrode and the connection electrode,
E.) on the electron scattering material layer, utilize spraying, plated film, coating or printing process to prepare the conductive nano stratum granulosum, and guarantee not occur between line scanning electrode and the connection electrode short circuit,
F.) on dielectric layer, prepare supporter,
G.) on nesa coating one side of band nesa coating anode glass substrate, prepare phosphor powder layer,
With cathode glass substrate and anode glass substrate sealing-in exhaust, form the vacuum working environment in the device.
The three-stage structure difference of three-stage structure of the present invention and existing band straight hole passage is:
● preparation electron scattering material layer between connection electrode and line scanning electrode.This scattering material layer adopts has better secondary performance, and has the material of the fine structure of rat, as nano zine oxide and nano magnesia structure etc.Its effect is to increase electron beam current, improves the longitudinal velocity of electronics, is beneficial to the motion of electronics anode.
● preparation conductive nano stratum granulosum on the electron scattering material layer.This conductive nano stratum granulosum adopts has better conductance property, and granular size is between tens nanometer is to several microns, as metal nanoparticle, carbon nano-particle and carbon nano-tube/fiber etc.Its effect is the Electric Field Distribution that changes between connection electrode and the line scanning electrode, further reduces driving voltage.
● electron scattering material layer and conductive nano stratum granulosum all can be by printing or coating process preparations.
Beneficial effect: in the present invention, adopt to have better secondary performance, and have the material of the fine structure of rat, as nano zine oxide and nano magnesia structure etc. as the electron scattering material.By secondary electron and scattered electron emission, improved the current value of being collected by anode.
In the present invention, the electron scattering material layer is provided with the conductive nano stratum granulosum.This conductive nano stratum granulosum adopts has better conductance property, and granular size is between tens nanometer is to several microns, as metal nanoparticle, carbon nano-particle and carbon nano-tube/fiber etc.The existence of these fine conductive particles has changed the Electric Field Distribution between connection electrode and the scan electrode.Only need between connection electrode and scan electrode, to apply a less voltage, can obtain stronger field-causing electron emission.
Surface electronic field emission tripolar construction proposed by the invention can obtain lower driving voltage, and simplified driving circuit reduces its cost.In this structure, electron scattering material layer and conductive nano stratum granulosum all can adopt printing or coating process preparation, and preparation technology is simple, with low cost.
Description of drawings
Fig. 1 be supporter proposed by the invention on dielectric layer, the three-stage structure schematic diagram of nesa coating anode electrode.
Fig. 2 is the related electrode position view of cathode base top electrode.
Fig. 3 be supporter proposed by the invention on cathode base, the three-stage structure schematic diagram of aluminium film anode electrode.
Wherein have: cathode glass substrate 1, data electrode 2, dielectric layer 3, straight hole passage connection electrode 4, connection electrode 5, scan electrode 6, electron scattering material layer 7, conductive nano stratum granulosum 8, supporter 9, anode glass substrate 10, nesa coating anode electrode 11, phosphor powder layer 12, aluminium film anode electrode 13.
Embodiment
The surface electronic field emission tripolar construction that the present invention proposes is to be provided with data electrode 2 on cathode glass substrate 1, is provided with dielectric layer 3 on data electrode 2, and this dielectric layer 3 is provided with penetrating via connection electrode 4; On dielectric layer 3, be provided with connection electrode 5 and the line scanning electrode 6 vertical with data electrode; Connection electrode and data electrode are conducted by the straight hole passage that runs through; On connection electrode 5, line scanning electrode 6 and dielectric layer 3, be provided with electron scattering material layer 7; On electron scattering material layer 7, be provided with conductive nano stratum granulosum 8; On cathode glass substrate 1 or dielectric layer 3, be provided with supporter 9, on supporter 9, be provided with anode glass substrate 10, be provided with anode electrode 11, be provided with phosphor powder layer 12 at the lower surface of anode electrode 11 at the lower surface of anode glass substrate 10.
The method of preparation is: adopt the method for printing, sintering or plated film, photoetching to prepare data electrode on cathode glass substrate; Method by printing, sintering or plated film, photoetching on data electrode prepares dielectric layer, and forms the straight hole array that runs through; The method of printing on dielectric layer, sintering or plated film, photoetching prepares the line scanning electrode, and the insulation vertical mutually with data electrode of this electrode; Utilize the method for printing, sintering or plated film, photoetching to prepare connection electrode, connection electrode is conducted by penetrating straight aperture and data electrode; Utilize methods such as printing, spraying or coating to be expert at and prepare the electron scattering material layer between scan electrode and the connection electrode; On the electron scattering material layer, utilize methods such as spraying, plated film, coating or printing to prepare the conductive nano stratum granulosum; The preparation supporter; On nesa coating one side of band nesa coating anode glass substrate, prepare phosphor powder layer, also can on the anode glass substrate, directly prepare phosphor powder layer, evaporation layer of aluminum film on phosphor powder layer then; With cathode base and anode substrate sealing-in exhaust, form the vacuum working environment in the device.
In the surface electronic field emission tripolar construction proposed by the invention, have one between connection electrode and line scanning electrode less than 500 microns gap.In common three-stage structure, emissive material must accurately be filled in the medium fenestra.If the emissive material position is offset to some extent or emitter layer is blocked up, then can cause the short circuit between negative electrode and the grid.If the area of emissive material much smaller than the deielectric-coating hole dimension, though avoided the short circuit of negative electrode and grid, can make driving voltage increase sharply.
Usually can adopt the field emission body layer of the method impressing patternization of silk screen printing.For fear of of the influence of later process such as dielectric layer preparation and grid preparation to emitter, must be on emitter protective mulch.This has increased process complexity, and still has part emitter performance to be damaged.If preparation medium fenestra and gate electrode adopt the method for silk screen printing to be difficult to emissive material is filled in the fenestra exactly earlier.
If adopt the method direct growth emissive material of CVD in three-stage structure, though emitter accurately can be located, its higher working temperature (＞550 ℃) can produce glass substrate and destroy.
And in structure proposed by the invention, electron scattering material layer and conductive nano stratum granulosum only need evenly be coated among the gap of line scanning electrode and connection electrode, do not need accurate location, so preparation technology is simple, and can reduce driving voltage.
Connection electrode and line scanning electrode are positioned at same plane, and connection electrode is conducted by straight hole passage and data electrode.Printing or plated film prepare the electron scattering material layer between connection electrode and the scan electrode, republish preparation conductive nano stratum granulosum on the electron scattering material layer.Owing to adopt electron scattering material layer and conductive nano stratum granulosum, can reduce driving voltage effectively.In the present invention, can adopt planographic or coating process to prepare this planar tripolar structure, so preparation technology is simple, cost of manufacture is cheap.
The electron scattering material layer can adopt has better secondary performance, and has the material of the fine structure of rat, as nano zine oxide and nano magnesia structure etc.The conductive nano stratum granulosum can adopt to have better has better conductance property, and the molecule of granular size between tens nanometer is to several microns is as metal nanoparticle, carbon nano-particle and carbon nano-tube/fiber etc.By the control nanoparticle density, making does not have electrically contact mutually between the conductive particle, guarantee not occur between connection electrode and the scan electrode short circuit.The anode glass substrate is made of as anode electrode and the phosphor powder layer made on nesa coating jointly the nesa coating that is produced on the transparent conducting film glass substrate, and phosphor powder layer is positioned at the side of anode glass real estate to cathode glass substrate; Perhaps the anode glass substrate also can be after being produced on phosphor powder layer on the transparent conducting film glass substrate, makes layer of aluminum film anode electrode again and make on phosphor powder layer.
Claims (3)
1. surface electronic field emission tripolar construction, it is characterized in that on cathode glass substrate (1), being coated with data electrode (2), going up at data electrode (2) is dielectric layer (3), dielectric layer (3) is provided with supporter (9), on supporter (9), be provided with anode glass substrate (10), lower surface at anode glass substrate (10) is provided with anode electrode (11), is provided with phosphor powder layer (12) at anode electrode (11) lower surface; On dielectric layer (3), be provided with the connection electrode (5) parallel, line scanning electrode (6) and the electron scattering material layer (7) vertical with data electrode with data electrode (2), width is arranged less than 100 microns gap between connection electrode (5) and the line scanning electrode (6), the middle part projection of electron scattering material layer (7) is arranged in this gap, both sides cover the top of connection electrode (5), line scanning electrode (6), are provided with conductive nano stratum granulosum (8) on electron scattering material layer (7); Be provided with penetrating via (4) interchange data electrode (2) and connection electrode (5) in the dielectric layer (3); Electron scattering material layer (7) adopts has the secondary performance, and has the material of the fine structure of rat.
2. surface electronic field emission tripolar construction as claimed in claim 1 is characterized in that conductive nano stratum granulosum (8) has conductance property, and granular size is between tens nanometer is to several microns.
3. the preparation method of a surface electronic field emission tripolar construction as claimed in claim 1 is characterized in that the method for this preparation is:
A.) on cathode glass substrate, adopt printing, sintering, perhaps plated film, photoetching, method perhaps coated, sintering prepares data electrode,
B.) mode by planographic or plated film prepares the planar medium layer on data electrode, obtains running through the straight hole array of planar medium layer then by exposure and etching process; Perhaps directly prepare the dielectric layer that has vertical channel by silk-screen printing technique,
C.) printing, sintering on the planar medium layer, perhaps plated film, photoetching, method perhaps coated, sintering prepares line scanning electrode and connection electrode simultaneously; Connection electrode is parallel with data electrode, and is conducted by straight hole passage and data electrode, and the insulation vertical mutually of line scanning electrode with data electrode,
D). utilize spraying, plated film, coating or the printing process preparation electron scattering material layer of being expert between scan electrode and the connection electrode,
E.) on the electron scattering material layer, utilize spraying, plated film, coating or printing process to prepare the conductive nano stratum granulosum, and guarantee not occur between line scanning electrode and the connection electrode short circuit,
F.) on dielectric layer, prepare supporter,
G.) on nesa coating one side of band nesa coating anode glass substrate, prepare phosphor powder layer,
With cathode glass substrate and anode glass substrate sealing-in exhaust, form the vacuum working environment in the device.
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| CN200910024472XA CN101483129B (en) | 2009-02-23 | 2009-02-23 | Surface electronic field emission tripolar construction and production method thereof |
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| CN200910024472XA CN101483129B (en) | 2009-02-23 | 2009-02-23 | Surface electronic field emission tripolar construction and production method thereof |
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| CN101483129B true CN101483129B (en) | 2010-06-16 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101071722A (en) * | 2007-05-25 | 2007-11-14 | 东南大学 | Straight-hole channel planar field emission tripole structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071722A (en) * | 2007-05-25 | 2007-11-14 | 东南大学 | Straight-hole channel planar field emission tripole structure |
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| CN 101071722 A,,2007.11.14,权利要求书. |
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