CN104576126A - Carbon nano-tube MEMS switch and manufacturing method thereof - Google Patents
Carbon nano-tube MEMS switch and manufacturing method thereof Download PDFInfo
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- CN104576126A CN104576126A CN201510032823.7A CN201510032823A CN104576126A CN 104576126 A CN104576126 A CN 104576126A CN 201510032823 A CN201510032823 A CN 201510032823A CN 104576126 A CN104576126 A CN 104576126A
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Abstract
The invention provides a carbon nano-tube MEMS switch and a manufacturing method of the carbon nano-tube MEMS switch. The manufacturing method of the carbon nano-tube MEMS switch includes the steps that (1), carbon nano-tubes are grown perpendicularly on the upper surface of a silicon substrate; (2), gold is arranged on the face, where the carbon nano-tubes are grown, of the silicon substrate and the carbon nano-tubes in a sputtered mode; (3), the surfaces where the gold is arranged in the sputtered mode are electroplated so that coplanar waveguide gold layers can be formed; (4), the gold layers are patterned, polished and ground flush; (5), the gold layers which are polished and ground flush are aligned with metal electrodes to be bonded; (6), the silicon substrate is removed; (7), a silicon oxide protection layer is grown at one end of the exposed part of each carbon nano-tube after the silicon substrate is removed; (8), an electrode exerting down pull is formed on the exposed part of each gold layer after the silicon substrate is removed, and silicon nitride layers are formed on the surfaces of the electrodes; (9), the silicon oxide protection layer at one end of each carbon nano-tube is removed. The carbon nano-tube MEMS switch manufactured through the method is high in power capacity and good in reliability.
Description
Technical field
The invention belongs to electronics field, specifically, the present invention relates to carbon nano-tube mems switch and preparation method thereof.
Background technology
The electrode material General Requirements of MEMS (MEMS (micro electro mechanical system)) switch conducts electricity very well, and fusing point is high, and hardness is good.Au is because to have resistivity low, and not oxidizable characteristic and be widely used as MEMS electrode material, current existing switch adopts the alloy of Au or Au substantially, and Au easily causes switch thermal failure because of softening 100 DEG C time.In addition, switch upper/lower electrode contact-making surface is uneven from microcosmic, and the conduction spot formed therebetween is less, contact resistance is increased, therefore makes the power capacity of mems switch and life-span obviously reduce.
Summary of the invention
The present invention is intended to solve one of technical problem in correlation technique at least to a certain extent.For this reason, one object of the present invention is to propose a kind of effective method preparing carbon nano-tube mems switch and the carbon nano-tube mems switch utilizing the method to prepare.
According to an aspect of the present invention, the present invention proposes a kind of method preparing carbon nano-tube mems switch, comprising:
(1) vertical-growth carbon nano-tube on the upper surface of silicon substrate;
(2) there is sputtering in the one side of the silicon substrate of carbon nano-tube and carbon nano-tube golden in growth;
(3) electrogilding is carried out, to form layer gold to the surface of the gold after sputtering;
(4) carry out graphical and polishing to described layer gold to polish;
(5) layer gold after described polishing polishes is aimed at bonding with metal electrode;
(6) silicon substrate is removed;
(7) one end of the carbon nano-tube exposed after removing silicon substrate grows one deck silicon oxide protective layer;
(8) layer gold exposed after removing silicon substrate forms the electrode applying lower pulling force, and forms silicon nitride layer on the surface of described electrode; And
(9) silicon oxide protective layer on one end of carbon nano-tube is removed.
Utilizing said method can prepare with carbon nano-tube is the mems switch contacting contact.Thus, Electrothermal Properties and the pliability of carbon nano-tube excellence can be utilized, increase the conduction spot number of switch, reduce the contact resistance of switch, improve switch life and power capacity.The carbon nano-tube mems switch product reliability that said method of the present invention prepares is high.
In addition, the method preparing carbon nano-tube mems switch according to the above embodiment of the present invention can also have following additional technical characteristic:
In some embodiments of the invention, in step (1), comprise further:
Silicon oxide layer and metallic chromium layer is formed in advance on described silicon substrate.
In some embodiments of the invention, in step (1), using dimethylbenzene as carbon source, ferrocene goes out described carbon nano-tube as catalyst vertical-growth on described silicon substrate, and described carbon nano-tube is multi-walled carbon nano-tubes.
In some embodiments of the invention, the height of described carbon nano-tube is 1-3 micron.
In some embodiments of the invention, described in step (1), vertical-growth carbon nano-tube is carried out under the condition of 780 degrees Celsius on a silicon substrate.
In some embodiments of the invention, in step (6), removing silicon substrate carries out according to the following step:
The pre-protection zone of the integrally-built outer surface of formation after bonding applies fluid sealant, to form sealant layer;
At the black glue of the surface application of described fluid sealant, to form black glue-line;
Black glue-line is carried out hot setting, to form composite protection layer on described pre-protection zone;
Silicon substrate after utilizing etching solution effects on surface to form described composite protection layer carries out deep etching, to be etched away by described silicon substrate; And
Remove described composite protection layer, to complete described removing silicon substrate and described carbon nano-tube to be transferred on described metal electrode.
In some embodiments of the invention, described pre-protection zone is the part in the integrally-built front of formation after bonding, reverse side and side, and described front is the lower surface of silicon substrate.
In some embodiments of the invention, the thickness of described sealant layer is 11-12 micron, and the thickness of described black glue-line is 0.5-1.5 micron, and the thickness of described composite protection layer is 13 microns.
In some embodiments of the invention, described hot setting toasts at one hundred and twenty degrees centigrade to complete for 2 hours.
According to another aspect of the present invention, the present invention proposes a kind of carbon nano-tube mems switch, described switch is prepared by the foregoing method preparing carbon nano-tube mems switch.This carbon nano-tube mems switch take carbon nano-tube as contact contact thus, and then can utilize Electrothermal Properties and the pliability of carbon nano-tube excellence, increases the conduction spot number of switch, reduces the contact resistance of switch, improves switch life and power capacity.
Accompanying drawing explanation
Fig. 1 grows one deck silica 11 on a silicon substrate, and concrete thickness is determined by carbon nano tube growth.
Fig. 2 is growing metal chromium 12 also chemical wet etching on Fig. 1 basis, and thickness is determined by carbon nano-tube height on last metal.
Fig. 3 is by CVD on silica, using dimethylbenzene and ferrocene as carbon source and catalyst, grows the high carbon nano-tube of 1-3um 13 at 780 DEG C.
Fig. 4 sputters layer of metal Seed Layer 14 in the carbon nano-tube grown, simulation carbon nano-tube vertical-growth.
Fig. 5 thickeies 15 for making metal seed layer with plating.
Fig. 6, for graphical to carrying out after electrode alignment, makes switch bottom surface CPW figure.
Fig. 7 be by plating photoetching after metal level carry out CMP polishing and polish.
Another good for photoetching substrate and carbon nano-tube substrate alignment keys are closed by Fig. 8.
Fig. 9 is the silicon base removed below, silica and crome metal, (dark silicon etching protective layer adopts the composite construction of fluid sealant/black glue), upset.
Figure 10 is as protective layer to the long one deck silica 19 of carbon nano-tube.
Figure 11 makes one deck silicon nitride 20 on the electrode of the drop-down electrostatic force of applying.
Figure 12 is the silicon oxide protective layer 19 removing carbon nano-tube top.
Figure 13 is overall structure figure after the bonding forming composite protection layer after overprotection.
Embodiment
Below with reference to the accompanying drawings 1-13 describes the method preparing carbon nano-tube mems switch of the specific embodiment of the invention in detail, and the method comprises:
(1) vertical-growth carbon nano-tube on the upper surface of silicon substrate;
(2) there is sputtering in the one side of the silicon substrate of carbon nano-tube and carbon nano-tube golden in growth;
(3) electrogilding is carried out, to form layer gold to the surface of the gold after sputtering;
(4) carry out graphical and polishing to described layer gold to polish;
(5) layer gold after described polishing polishes is aimed at bonding with metal electrode;
(6) silicon substrate is removed;
(7) one end of the carbon nano-tube exposed after removing silicon substrate grows one deck silicon oxide protective layer;
(8) layer gold exposed after removing silicon substrate forms the electrode applying lower pulling force, and forms silicon nitride layer on the surface of described electrode; And
(9) silicon oxide protective layer on one end of carbon nano-tube is removed.
Utilizing said method can prepare with carbon nano-tube is the mems switch contacting contact.Thus, Electrothermal Properties and the pliability of carbon nano-tube excellence can be utilized, increase the conduction spot number of switch, reduce the contact resistance of switch, improve switch life and power capacity.Said method technique of the present invention is simple, the carbon nano-tube mems switch good product performance prepared.
According to a particular embodiment of the invention, in above-mentioned steps (1), vertical-growth carbon nano-tube on the upper surface of silicon substrate, can further include: form silicon oxide layer and metallic chromium layer on a silicon substrate in advance.Wherein, silicon oxide layer can as the growth substrate of carbon nano-tube, and metallic chromium layer is used as carbon nano tube growth mould) thus, effectively can grow the suitable and carbon nano-tube be suitable for as contact contact of size, improve the performance of mems switch.
According to a particular embodiment of the invention, in above-mentioned steps (1), can using dimethylbenzene as carbon source, ferrocene as catalyst on a silicon substrate vertical-growth go out carbon nano-tube, this carbon nano-tube grown is multi-walled carbon nano-tubes.The many features of multi-walled carbon nano-tubes quantity can be utilized thus to conduct electricity the number of spot between upper/lower electrode to increase; High-termal conductivity (the 1400W m of multi-walled carbon nano-tubes can also be utilized simultaneously
-1k
-1, the heat-resisting 2000K of reaching) and reach the effect of Quick diffusing heat, and then overcome the softening thermal failure of gold; In addition, multi-walled carbon nano-tubes also has good pliability (1TPa) and electric conductivity (10
9acm
-2), effectively can overcome the formation abrasion of traditional material thus, reduce resistance during switch contact simultaneously.
According to a particular embodiment of the invention, the height of carbon nano-tube can be 1-3 micron.The demand of Switch Controller contact can be suitable for thus, significantly improve the sensitivity of switch simultaneously.
According to a particular embodiment of the invention, in above-mentioned steps (1), vertical-growth carbon nano-tube is carried out under the condition of 780 degrees Celsius on a silicon substrate.Effectively can grow carbon nano-tube thus.The carbon nano-tube oriented property that experimental exploring grows under proving this temperature and density the best.Too high or the too low meeting of temperature causes the carbon nanotube density of growth sparse, and perpendicularity is very poor.
According to a particular embodiment of the invention, in above-mentioned steps (6), removing silicon substrate carries out according to the following step:
The pre-protection zone of the integrally-built outer surface of formation after bonding applies fluid sealant, to form sealant layer;
At the black glue of the surface application of described fluid sealant, to form black glue-line;
Black glue-line is carried out hot setting, to form composite protection layer on described pre-protection zone;
Silicon substrate after utilizing etching solution effects on surface to form described composite protection layer carries out deep etching, to be etched away by described silicon substrate; And
Remove described composite protection layer, to complete described removing silicon substrate and described carbon nano-tube to be transferred on described metal electrode.
Thus, by the integrally-built pre-protection zone of formation after bonding being formed the composite protection layer of sealant layer and black glue-line composition, effectively can prevent the erosion of etching solution thus, and then reaching the object of available protecting.According to a particular embodiment of the invention, black glue-line can strengthen the alkali resistance of composite protection layer further, and then improves the protective effect to pre-protection zone.Above-mentioned guard method, goes protective layer simple, without the need to complex device, and then can significantly shorten the wet method deep etching time, reduce costs after deep etching.
According to a particular embodiment of the invention, as shown in Figure 8, described pre-protection zone is the part in the integrally-built front of formation after bonding, reverse side and side, and described front is the lower surface of silicon substrate.Thus, the method is adopted the integrally-built pre-protection zone of formation in wet method deep etching process after para-linkage effectively to protect, and then the silicon substrate of selectivity removing accurately and effectively, improve the accuracy of wet method deep etching, improve the quality of product.
According to a particular embodiment of the invention, first on the pre-protection zone of body silicon outer surface, apply fluid sealant, at formation sealant layer after drying.According to concrete example of the present invention, flash-off time can be 10 minutes.The thickness of the sealant layer formed can be 11-12 micron.By controlling above-mentioned thickness, can the integrally-built pre-protection zone of formation effectively after para-linkage effectively protect.
According to a particular embodiment of the invention, continue the black glue of coating on the surface of sealant layer, black glue forms black glue-line after overcuring, and according to concrete example of the present invention, the thickness of black glue-line can be 0.5-1.5 micron.By forming black glue-line on the surface of fluid sealant, significantly can strengthen the alkali resistance of sealant layer, and then improve the protective effect of composite protection layer.
According to a particular embodiment of the invention, black glue is carried out hot setting to toast at one hundred and twenty degrees centigrade and complete for 2 hours.The black glue-line of formation and sealant layer can be made thus to combine closely, strengthen the alkali resistance of sealant layer, and then improve the protective effect of composite protection layer.
According to a particular embodiment of the invention, the end face 850-950 micron of the black glue-line of the end face distance of sealant layer.Namely black glue-line exceeds the length of part after carrying out capping to sealant layer.Sealant layer is covered by black glue-line completely thus, and then puies forward the alkali resistance of sealant layer, and then improves the protective effect of composite protection layer.
According to a particular embodiment of the invention; finally form on the surface, pre-protection zone of body silicon the composite protection layer be made up of sealant layer and black glue-line; according to concrete example of the present invention; the thickness of composite protection layer is 13 microns and can effectively prevents etching liquid from corroding thus, reaches the object of the integrally-built pre-protection zone of the formation after available protecting bonding.
According to a particular embodiment of the invention, deep etching can adopt the concentration of 85 degrees Celsius be 33% potassium hydroxide solution carry out.Thus; the integrally-built side of etching solution to the formation after bonding in transfer process and the infringement of layers cementing agent when the composite protection layer formed by above-mentioned guard method can prevent wet method deep etching effectively; and then make up the defect of existing wet method deep etching, improve the quality of product.
According to a further aspect in the invention, the invention allows for a kind of carbon nano-tube mems switch, described switch is prepared by the foregoing method preparing carbon nano-tube mems switch.This carbon nano-tube mems switch take carbon nano-tube as contact contact thus, and then can utilize Electrothermal Properties and the pliability of carbon nano-tube excellence, increases the conduction spot number of switch, reduces the contact resistance of switch, improves switch life and power capacity.
Embodiment
First, as shown in Figure 1, silicon substrate 10 grows one deck silica 11, concrete thickness is determined by carbon nano tube growth; As shown in Figure 2, growing metal chromium 12 also chemical wet etching on silica 11 basis, thickness is determined by carbon nano-tube height on last metal; As shown in Figure 3, by CVD on silica 11, using dimethylbenzene and ferrocene as carbon source and catalyst, at 780 DEG C, grow the high carbon nano-tube of 1-3um 13; As shown in Figure 4, the carbon nano-tube 13 grown sputters layer of metal Seed Layer 14, simulation carbon nano-tube vertical-growth; As shown in Figure 5, metal seed layer 14 is made to thicken into metal level 15 with plating; As shown in Figure 6, graphical to carrying out after electrode alignment, make switch bottom surface CPW figure; As shown in Figure 7, the metal level 15 after plating photoetching is carried out CMP polishing to polish; As shown in Figure 8, another base metal electrode (comprising layer gold 16,17 and High Resistivity Si 18) good for photoetching is aimed at bonding with the silicon substrate 10 being formed with carbon nano-tube; As shown in Figure 9, remove silicon base 10 below, silica 11 and silicon nitride 12, (dark silicon etching protective layer adopts the composite construction of fluid sealant/black glue), upset; As shown in figs. 10-11, to the long one deck silica 19 of carbon nano-tube as protective layer, until just remove after having made switch upper electrode, give in addition on the electrode applying drop-down electrostatic force and make one deck silicon nitride 20; Release photoresist; As shown in figure 12, the silicon oxide protective layer 19 on carbon nano-tube top is removed.
Wherein, as shown in Figure 9, silicon base below, silica 11 and crome metal 12 is removed, (dark silicon etching protective layer adopts the composite construction of fluid sealant/black glue), upset.Specifically can carry out according to the following step:
Shown in Fig. 8, the edge coating fluid sealant in integrally-built reverse side, side and front, after drying about 10 minutes, forms the sealant layer 30 of about 11.050 microns.At the black glue of the surface application of sealant layer, toasting being coated the body silicon after black glue 2 hours in the baking oven of 120 degrees Celsius, making black adhesive curing, take out cooling.Form the black glue-line 40 (as shown in figure 13) that thickness is about 1 micron on the surface of sealant layer, on the region of the pre-protection of body silicon, form composite protection layer thus, complete integrally-built protection.Further the structure after protection to be immersed in temperature be the concentration of 85 degrees Celsius is in the sodium hydroxide solution of 33%, carries out deep etching, after completing deep etching to silicon base 10, silica 11 and silicon nitride 12.Finally peel off the composite protection layer of the outer surface after deep etching with tweezers, and clean in deionized water, obtain the product after shifting, as shown in Figure 9.This guard method is simple to operate, and without the need to complex device, the removal ratio of protective layer is easier to, overall deep etching and transfer process respond well, cost is low.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term need not for be identical embodiment or example.And the specific features of description, structure, material or feature can combine in one or more embodiment in office or example in an appropriate manner.In addition, when not conflicting, the feature of the different embodiment described in this specification or example and different embodiment or example can carry out combining and combining by those skilled in the art.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, and those of ordinary skill in the art can change above-described embodiment within the scope of the invention, revises, replace and modification.
Claims (10)
1. prepare a method for carbon nano-tube mems switch, it is characterized in that, comprising:
(1) vertical-growth carbon nano-tube on the upper surface of silicon substrate;
(2) there is sputtering in the one side of the silicon substrate of carbon nano-tube and carbon nano-tube golden in growth;
(3) electrogilding is carried out, to form layer gold to the surface of the gold after sputtering;
(4) carry out graphical and polishing to described layer gold to polish;
(5) layer gold after described polishing polishes is aimed at bonding with metal electrode;
(6) silicon substrate is removed;
(7) one end of the carbon nano-tube exposed after removing silicon substrate grows one deck silicon oxide protective layer;
(8) layer gold exposed after removing silicon substrate forms the electrode applying lower pulling force, and forms silicon nitride layer on the surface of described electrode; And
(9) silicon oxide protective layer on one end of carbon nano-tube is removed.
2. prepare the method for carbon nano-tube mems switch according to claim 1, it is characterized in that, in step (1), comprise further:
Silicon oxide layer and metallic chromium layer is formed in advance on described silicon substrate.
3. according to claim 1 or 2, prepare the method for carbon nano-tube mems switch, it is characterized in that, in step (1), using dimethylbenzene as carbon source, using ferrocene as catalyst, on described silicon substrate, vertical-growth goes out described carbon nano-tube, and described carbon nano-tube is multi-walled carbon nano-tubes.
4. according to any one of claim 1-3, prepare the method for carbon nano-tube mems switch, it is characterized in that, the height of described carbon nano-tube is 1-3 micron.
5. according to any one of claim 1-4, prepare the method for carbon nano-tube mems switch, it is characterized in that, in step (1), vertical-growth carbon nano-tube is carried out under the condition of 780 degrees Celsius on a silicon substrate.
6. according to any one of claim 1-5, prepare the method for carbon nano-tube mems switch, it is characterized in that, in step (6), removing silicon substrate carries out according to the following step:
The pre-protection zone of the integrally-built outer surface of formation after bonding applies fluid sealant, to form sealant layer;
At the black glue of the surface application of described fluid sealant, to form black glue-line;
Black glue-line is carried out hot setting, to form composite protection layer on described pre-protection zone;
Silicon substrate after utilizing etching solution effects on surface to form described composite protection layer carries out deep etching, to be etched away by described silicon substrate; And
Remove described composite protection layer, to complete described removing silicon substrate and described carbon nano-tube to be transferred on described metal electrode.
7. prepare the method for carbon nano-tube mems switch according to claim 6, it is characterized in that, described pre-protection zone is the part in the integrally-built front of formation after bonding, reverse side and side, and described front is the lower surface of silicon substrate.
8. according to claim 6 or 7, prepare the method for carbon nano-tube mems switch, it is characterized in that, the thickness of described sealant layer is 11-12 micron, and the thickness of described black glue-line is 0.5-1.5 micron, and the thickness of described composite protection layer is 13 microns.
9. according to any one of claim 6-8, prepare the method for carbon nano-tube mems switch, it is characterized in that, described hot setting toasts at one hundred and twenty degrees centigrade to complete for 2 hours.
10. a carbon nano-tube mems switch, is characterized in that, described switch is prepared by the method preparing carbon nano-tube mems switch described in any one of claim 1-9.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1320111A1 (en) * | 2001-12-11 | 2003-06-18 | Abb Research Ltd. | Carbon nanotube contact for MEMS |
| US6936780B2 (en) * | 2003-12-16 | 2005-08-30 | Intel Corporation | Protected switch and techniques to manufacture the same |
| CN101143701A (en) * | 2007-10-19 | 2008-03-19 | 清华大学 | Method for manufacturing radio-frequency micro-machinery series contact type switch |
| CN101620952A (en) * | 2008-12-19 | 2010-01-06 | 清华大学 | Ohm contact type radio frequency switch and integration process thereof |
| JP4529479B2 (en) * | 2004-02-27 | 2010-08-25 | ソニー株式会社 | Microstructure manufacturing method and display device |
| CN103177904A (en) * | 2013-03-01 | 2013-06-26 | 清华大学 | Radio frequency MEMS (micro-electromechanical system) switch and forming method thereof |
-
2015
- 2015-01-22 CN CN201510032823.7A patent/CN104576126A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1320111A1 (en) * | 2001-12-11 | 2003-06-18 | Abb Research Ltd. | Carbon nanotube contact for MEMS |
| US6936780B2 (en) * | 2003-12-16 | 2005-08-30 | Intel Corporation | Protected switch and techniques to manufacture the same |
| JP4529479B2 (en) * | 2004-02-27 | 2010-08-25 | ソニー株式会社 | Microstructure manufacturing method and display device |
| CN101143701A (en) * | 2007-10-19 | 2008-03-19 | 清华大学 | Method for manufacturing radio-frequency micro-machinery series contact type switch |
| CN101620952A (en) * | 2008-12-19 | 2010-01-06 | 清华大学 | Ohm contact type radio frequency switch and integration process thereof |
| CN103177904A (en) * | 2013-03-01 | 2013-06-26 | 清华大学 | Radio frequency MEMS (micro-electromechanical system) switch and forming method thereof |
Non-Patent Citations (1)
| Title |
|---|
| MASOUD DAHMARDEH,ET AL: "High-power MEMS switch enabled by carbon-nanotube contact and shape-memory-alloy actuator", 《PHYS.STATUS SOLIDI》 * |
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