KR20170028687A - Manufacturing method of metal nanowire electrode - Google Patents
Manufacturing method of metal nanowire electrode Download PDFInfo
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- KR20170028687A KR20170028687A KR1020150125634A KR20150125634A KR20170028687A KR 20170028687 A KR20170028687 A KR 20170028687A KR 1020150125634 A KR1020150125634 A KR 1020150125634A KR 20150125634 A KR20150125634 A KR 20150125634A KR 20170028687 A KR20170028687 A KR 20170028687A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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Abstract
Description
The present invention relates to a method of manufacturing a metal nanowire electrode, and more particularly, to a method of manufacturing a metal nanowire electrode by transferring the metal nanowire electrode onto a rubber substrate by minimizing the decrease in conductivity of the metal nanowire layer will be.
In recent years, research on metal nanowire-based sensors and elongated electrodes has received great interest due to the growing interest in electronic skin and deformable electronic devices. These studies are mainly focused on the development of opaque but extendable electrodes using thick metal nanowires or the development of metal nanowire sensors that exhibit resistance changes that are sensitive to strain using thin metal nanowires.
However, the development of a metal nanowire electrode that is transparent and stretchable has many difficulties because the conductivity is greatly reduced in the process of transferring the metal nanowire to the rubber substrate. In addition, thin metal nanowire electrodes are less useful due to their low durability. Accordingly, there is a need for a method for manufacturing a metal nanowire electrode having superior permeability and conductivity and improved durability, compared with conventional metal nanowire electrodes.
The present invention provides a method of manufacturing a metal nanowire electrode for manufacturing a metal nanowire electrode having excellent transmittance and conductivity.
The present invention also provides a method for producing a metal nanowire electrode for producing a metal nanowire electrode capable of being stretched.
According to an embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (a) forming a metal nanowire layer on a first substrate; (b) forming an adhesive layer on the second substrate; (c) performing a heat treatment on the metal nanowire layer on the first substrate and the adhesive layer on the second substrate in contact with each other and under predetermined heat treatment conditions; And (d) separating the first substrate and the metal nanowire layer from each other in water and transferring the metal nanowire layer to the adhesive layer.
The method may further include, before the step (c), applying a tensile force to the second substrate and the adhesive layer.
The method may further include, after the step (d), removing the tensile force applied to the second substrate and the adhesive layer.
In the step (b), the adhesive layer may be formed by spin coating a polymer material on a glass substrate. Exposing the second substrate and the adhesive layer to an oxygen plasma to perform a surface treatment; And contacting the adhesive layer to the second substrate and then separating the glass substrate to form the adhesive layer on the second substrate.
The metal nanowire layer may be formed by at least one of spin coating, spraying, and inkjet printing.
The metal nanowire layer may be formed of a metal nanowire film or a metal nanowire pattern film.
The adhesive layer may include a polystyrene-butadiene-styrene block copolymer or a polystyrene-ethylene-butylene-styrene block copolymer. Or a thermoplastic block copolymer rubber.
The first substrate may be a silicon (Si) substrate or a glass substrate.
In addition, the second substrate may be a silicon rubber substrate including at least one of polyurethane and polydimethylsiloxane.
In addition, the heat treatment conditions may be set at a temperature of 140 ° C to 160 ° C for 10 minutes.
The present invention can produce a metal nanowire electrode having high transmittance and conductivity by transferring metal nanowires to a polymer adhesive layer in water.
Further, the present invention can manufacture a metal nanowire electrode that can be stretched by transferring a metal nanowire layer to an adhesive layer to which a tensile force is applied.
1 is a flowchart illustrating a method of manufacturing a metal nanowire electrode according to an embodiment of the present invention.
FIGS. 2 to 10 are views showing the detailed procedure of the method of manufacturing the metal nanowire electrode shown in FIG.
11 is a graph showing sheet resistance before and after transfer of a metal nanowire layer according to an embodiment of the present invention.
12 is a graph showing the relationship between sheet resistance and transmittance of a metal nanowire layer transferred according to an embodiment of the present invention.
13 is a flowchart illustrating a method of manufacturing a metal nanowire electrode according to another embodiment of the present invention.
14 is a view showing a corrugated pattern of a metal nanowire layer manufactured according to another embodiment of the present invention.
15 is a graph showing tensile force and resistance change rate of a metal nanowire layer according to another embodiment of the present invention.
Hereinafter, the present invention will be described more specifically based on preferred embodiments of the present invention. However, the following embodiments are merely examples for helping understanding of the present invention, and thus the scope of the present invention is not limited or limited.
1 is a flowchart illustrating a method of manufacturing a metal nanowire electrode according to an embodiment of the present invention.
Referring to FIG. 1, a method of manufacturing a metal nanowire electrode according to an embodiment of the present invention includes forming a metal nanowire layer on a first substrate (S110), forming a polymer adhesive layer on a second substrate (S120); a step (S130) of contacting the metal nanowire layer on the first substrate with an adhesive layer on the second substrate and then performing a heat treatment (S130); and separating the first substrate and the metal nanowire layer in water, And transferring the layer (S140).
Hereinafter, a method of manufacturing a metal nanowire electrode according to an embodiment of the present invention will be described with reference to FIGS. 2 to 10. FIG.
Referring to FIG. 2, in step S110, a
For example, the
Thereafter, the
In step S110, the metal nanowire layer may be formed of a thin film having an average thickness of about 38 nm and a sheet resistance of about 6.78? / Sq.
Referring to FIG. 5, in step S120, a polymeric
Next, the
If the polymeric
However, if the polymer
Here, the
In addition, the polymer adhesive layer may include a polystyrene-butadiene-styrene block copolymer or a polystyrene-ethylene-butylene-styrene block copolymer. Or a thermoplastic block copolymer rubber.
Referring to FIG. 8, in step S130, the
Here, the heat treatment condition may be set to heat treatment at a temperature of about 140 ° C to about 160 ° C for about 5 to 10 minutes. At this time, if the heat treatment is performed for less than about 5 minutes, the heat treatment effect is lowered, and if the heat treatment is performed for more than about 10 minutes, the manufacturing efficiency may be lowered due to an increase in the heat treatment time. Further, if the heat treatment is performed at a temperature of less than about 140 ° C, the bonding strength between the
9, in step S140, the
The
In step S140, water molecules penetrate the hydrophilic interface between the
11 is a graph showing sheet resistance before and after transfer of a metal nanowire layer according to an embodiment of the present invention.
Referring to FIG. 11, the metal nanowire layer according to an embodiment of the present invention shows an increasing tendency as the first sheet resistance measurement result 310 after being transferred to the polymer adhesive layer. The first sheet resistance measurement result 310 is not much different from the second sheet resistance measurement result 320 before transfer to the polymer adhesive layer. For example, the first sheet resistance measurement result 310 has a sheet resistance of about 1% greater than the second sheet resistance measurement result 320 at about 6? / Sq and the second sheet resistance measurement result 320 at about 40? / Sq. And the sheet resistance of about 20% increased.
The method of fabricating the metal nanowire electrode according to an embodiment of the present invention minimizes damage to the metal nanowire layer and is transferred, so that the change of sheet resistance before and after the transfer can be shown as shown in FIG.
12 is a graph showing the relationship between sheet resistance and transmittance of a metal nanowire layer transferred according to an embodiment of the present invention.
As shown in FIG. 12, the metal nanowire layer formed on the second substrate and the polymer adhesive layer had a transmittance of about 89.2% at a sheet resistance of about 14.0 OMEGA / sq and a transmittance of about 92.5% at a sheet resistance of about 24.0 OMEGA / It may have a transmittance. Accordingly, the method of manufacturing a metal nanowire electrode according to an embodiment of the present invention can transfer a metal nanowire layer so as to have high transmittance and low sheet resistance.
Here, the metal nanowire layer according to an embodiment of the present invention may have a relationship between transmittance and conductivity as shown in the following
[Equation 1]
And T (λ) is a transmittance in the equation (1), wherein R S is the surface resistance, can be op σ (λ) is the optical conductive (optical conductivity) and, σ DC is DC conductivity (conductivity DC). Here, the ratio of σ op (λ) to σ DC is a constant of the material and can be kept constant when the type and shape of the material are determined. For example, when a metal nanowire layer is formed using a metal nanowire, the material shape may be modified to change the ratio of? Op (?) And? DC .
The metal nanowire layer according to an embodiment of the present invention may have a low resistance value while having transparency to visible light due to percolation between metal nanowires. At this time, the conductivity of the metal nanowire layer can be expressed as σ = σ 0 (NN c ) α . Where N is the number density and Nc is the percolation threshold density. Therefore, the conductivity of the metal nanowire layer is changed by adjusting the numerical density higher than the permittivity threshold density, and the transmittance (T ()) also changes when the surface resistance R S is changed according to Equation (1).
A method of manufacturing a metal nanowire electrode according to an embodiment of the present invention can produce a metal nanowire electrode having high transmittance and conductivity by transferring metal nanowires to a polymer adhesive layer in water.
In addition, the method of manufacturing a metal nanowire electrode according to an embodiment of the present invention can manufacture an electrode of an electronic circuit that can not be visually distinguished by using a fine pattern of metal nanowires.
In addition, the method of manufacturing a metal nanowire electrode according to an embodiment of the present invention can produce an electrode for a high-performance sensor that is transparent and responds to microscopic stimulation.
13 is a flowchart illustrating a method of manufacturing a metal nanowire electrode according to another embodiment of the present invention.
Referring to FIG. 13, a method of fabricating a metal nanowire electrode according to another embodiment of the present invention includes forming a metal nanowire layer on a first substrate (S210), forming a polymer adhesive layer on a second substrate A step S230 of applying a tensile force to the second substrate and the polymer adhesive layer S230, a step S240 of contacting the metal nanowire layer and the polymer adhesive layer to the first substrate and the second substrate, followed by heat treatment S240, The step S250 of transferring the metal nanowire layer by separating the first substrate and the metal nanowire layer and the step S260 of removing the tensile force applied to the second substrate and the polymer adhesive layer may be included.
Here, steps S210 and S220 are the same as steps S110 and S120 described above, so duplicated description will be omitted.
In step S230, a tensile force may be applied to the second substrate and the polymer adhesive layer. For example, the second substrate and the polymer adhesive layer can be increased.
In step S240, the
In step S250, the
In step S260, the tensile force applied to the second substrate and the polymer adhesive layer may be removed. If the tensile force applied to the second substrate and the
The irregular wrinkled metal nanowire layer increases the density per unit area of the metal nanowire but does not change the sheet resistance because the electric conduction path is not shortened.
14 is a view showing a corrugated pattern of a metal nanowire layer manufactured according to another embodiment of the present invention.
Referring to FIG. 14, the metal nanowire layer can minimize interference due to diffraction of light which may occur in a regular wrinkle pattern due to an irregular wrinkle pattern.
15 is a graph showing tensile force and resistance change rate of a metal nanowire layer according to another embodiment of the present invention.
Referring to FIG. 15, since the metal nanowire layer according to another embodiment of the present invention has no resistance change until the polymeric adhesive layer is stretched by a tensile force applied in advance, a stretchable electrode can be formed.
The method of manufacturing a metal nanowire electrode according to another embodiment of the present invention can manufacture a metal nanowire electrode that can be drawn by transferring a metal nanowire layer to a polymer adhesive layer to which a tensile force is applied.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. In addition, it is a matter of course that various modifications and variations are possible without departing from the scope of the technical idea of the present invention by anyone having ordinary skill in the art.
110: first substrate
120: metal nanowire layer
200: glass substrate
210: a second substrate
220: polymer adhesive layer
Claims (10)
(b) forming an adhesive layer on the second substrate;
(c) performing a heat treatment on the metal nanowire layer on the first substrate and the adhesive layer on the second substrate in contact with each other and under a predetermined heat treatment condition; And
(d) separating the first substrate and the metal nanowire layer in water and transferring the metal nanowire layer to the adhesive layer;
≪ / RTI >
Prior to step (c)
And applying a tensile force to the second substrate and the adhesive layer.
After the step (d)
And removing the tensile force applied to the second substrate and the adhesive layer.
The step (b)
Spin-coating a polymeric material on a glass substrate to form the adhesive layer;
Exposing the second substrate and the adhesive layer to an oxygen plasma to perform a surface treatment; And
Separating the glass substrate after the adhesive layer is brought into contact with the second substrate to form the adhesive layer on the second substrate;
Wherein the metal nanowire electrode is formed of a metal.
Wherein the metal nanowire layer is formed by at least one of spin coating, spraying, and inkjet printing.
Wherein the metal nanowire layer is formed of a metal nanowire film or a metal nanowire pattern film.
Wherein the adhesive layer comprises a polystyrene-butadiene-styrene block copolymer or a polystyrene-ethylene-butylene-styrene block copolymer. Wherein the thermoplastic block copolymer rubber is formed of a thermoplastic block copolymer rubber.
Wherein the first substrate is a silicon substrate or a glass substrate.
Wherein the second substrate is a silicon rubber substrate comprising at least one of polyurethane and polydimethylsiloxane.
Wherein the heat treatment conditions are set at a temperature of 140 ° C to 160 ° C for 5 to 10 minutes.
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KR101963380B1 (en) * | 2017-09-20 | 2019-03-28 | 포항공과대학교 산학협력단 | Conductive composite and method for manufacturing the same |
US10679764B2 (en) | 2017-06-12 | 2020-06-09 | Samsung Display Co., Ltd. | Metal nanowire electrode and manufacturing method of the same |
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KR20080034257A (en) | 2006-10-16 | 2008-04-21 | 전자부품연구원 | Automation system for nano-wire transfer and method for driving the same |
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JP2010263067A (en) | 2009-05-07 | 2010-11-18 | Konica Minolta Holdings Inc | Method of manufacturing pattern electrode, and pattern electrode |
WO2011046011A1 (en) | 2009-10-14 | 2011-04-21 | コニカミノルタホールディングス株式会社 | Transparent conductor film with barrier properties, manufacturing method thereof, and organic electroluminescence element and organic solar cell using the transparent conductor film with barrier properties |
KR101513147B1 (en) | 2014-01-06 | 2015-04-17 | 국립대학법인 울산과학기술대학교 산학협력단 | Method for transfer of Oxide semi-conductor |
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KR20080034257A (en) | 2006-10-16 | 2008-04-21 | 전자부품연구원 | Automation system for nano-wire transfer and method for driving the same |
Cited By (2)
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US10679764B2 (en) | 2017-06-12 | 2020-06-09 | Samsung Display Co., Ltd. | Metal nanowire electrode and manufacturing method of the same |
KR101963380B1 (en) * | 2017-09-20 | 2019-03-28 | 포항공과대학교 산학협력단 | Conductive composite and method for manufacturing the same |
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