CN104517797B - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN104517797B CN104517797B CN201410514319.6A CN201410514319A CN104517797B CN 104517797 B CN104517797 B CN 104517797B CN 201410514319 A CN201410514319 A CN 201410514319A CN 104517797 B CN104517797 B CN 104517797B
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- processing apparatus
- plasma processing
- opening portion
- adjustment component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of plasma processing apparatus, it can prevent the generation of the local plasma in the pass through openings portion of process container.The insulating element (45) as impedance adjustment component is configured with the opening bottom surface in the pass through openings portion of process container.Insulating element (45) is by relative dielectric constant below 10, it is preferred that less than 4 material is formed, make the pad (60) for being more than main body container (2A) from the electrical impedance in the pass through openings portion that plasma is seen using insulating element (45), can prevent the generation of the local plasma in door opening portion (41).Cover (47) is set on insulating element (45), by covering the surface of insulating element (45), insulating element (45) can be protected from the damage of plasma.
Description
Technical field
It the present invention relates to the use of the plasma processing apparatus that plasma carries out the processing of substrate.
Background technology
In the manufacturing process with liquid crystal display (LCD) for the flat-panel monitor of representative, various processing are carried out to substrate
Such as film process, etching process etc..As the substrate board treatment for carrying out these processing, it is known to which corona treatment fills
Put.
Plasma processing apparatus generates the processing of the plasma progress substrate of processing gas in process container.This
When, it is possible to consume by the inner surface of the metal process container of the effect of plasma and corrosive gas, aluminium etc..Cause
This, such as the process container of aluminum is carried out anodized (alumina treatment).
In addition, the generation of the damaging of process container main body, local plasma in order to prevent, in the inner side of process container
Configure guard block.For example, proposing in patent document 1, quartz wall is configured in the door opening portion for carrying-in/carrying-out substrate
(wall), suppress generation, the inequality of plasma of the local plasma in door opening portion, and realize in real estate
The uniformity of processing.In patent document 1, by making configuration be more than in the thickness of the quartz wall in door opening portion in process container
Other positions, improve the electrical impedance from the door opening portion that plasma is seen.
On the other hand, proposed in patent document 2, the opening portion of the pressure detecting in process container configuration cellular or
The electromagnetic wave shielding element of cancellous electric conductivity, to suppress the electromagnetic wave noise overlapping with pressure signal.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2007-103697 publications (claims etc.)
Patent document 2：The public bag (Fig. 6 etc.) of Japanese Unexamined Patent Publication 6-29247
The content of the invention
Technical problems to be solved are thought in invention
In recent years, the requirement of the maximization to the substrate of FPD is strengthening, sometimes huge more than 2m with a side
Substrate is as process object.In order to support the maximization of substrate, process container also maximizes, and door opening portion also becomes larger.Such as special
As being proposed in sharp document 1, in method of thickness of the configuration in the quartz wall in door opening portion to ensure insulating properties is increased,
In order to ensure enough clearances (clearance) so that substrate can safety, it is necessary to make door opening portion height increase stone
The amount of the thickness of wall made in Great Britain.However, when increasing door opening portion, it is necessary to be used in the gate valve for opening and closing door opening portion
(gate valve) maximizes.In addition, when increasing door opening portion, the compressive resistance of process container also reduces.Therefore, seek to the greatest extent
Amount suppresses the size (height) in door opening portion, and reliably prevents the side of the generation of the local plasma in door opening portion
Method.
In addition, the generation of the local plasma in door opening portion, have the mounting table to loading substrate apply compared with
The trend of generation is particularly susceptible in the case of big bias voltage.So mounting table is applied larger bias voltage etc.
In gas ions processing unit, it is desirable to prevent the generation of the local plasma in door opening portion.
It is an object of the present invention in plasma processing apparatus, the office in the pass through openings portion of process container is prevented
The generation of the plasma in portion.
Technical teaching for solving the problem was
The plasma processing apparatus of the present invention is that substrate is handled in the inside of process container generation plasma
Plasma processing apparatus.In the plasma processing apparatus of the present invention, above-mentioned process container includes opening formed with perforation
The wall of oral area, above-mentioned pass through openings portion have opening bottom surface relative to each other and open top face and 2 open sides.Moreover, this
The plasma processing apparatus of invention is at least provided with the resistance for the electrical impedance for adjusting above-mentioned pass through openings portion in above-mentioned opening bottom surface
Anti- adjustment component.
In the plasma processing apparatus of the present invention, above-mentioned pass through openings portion can be that the door of carrying-in/carrying-out aforesaid substrate is opened
Oral area.
In the plasma processing apparatus of the present invention, above-mentioned impedance adjustment component can be less than 10 by relative dielectric constant
Material form.
In the plasma processing apparatus of the present invention, above-mentioned impedance adjustment component can be less than 4 by relative dielectric constant
Material form.
In the plasma processing apparatus of the present invention, above-mentioned impedance adjustment component can be less than 4 by relative dielectric constant
Resin material be formed as sheet.
In the plasma processing apparatus of the present invention, above-mentioned impedance adjustment component can be what is formed by polytetrafluoroethylene (PTFE)
Piece.
In the plasma processing apparatus of the present invention, it can also be stacked by electricity on above-mentioned impedance adjustment component
The cover that medium is formed.
In the plasma processing apparatus of the present invention, above-mentioned impedance adjustment component can be by with identical with above-mentioned cover
Or the material of smaller relative dielectric constant is formed.
In the plasma processing apparatus of the present invention, above-mentioned cover can be formed by ceramics.
In the plasma processing apparatus of the present invention, can have along the internal face of above-mentioned process container and protect the internal face
The guard block of the insulating properties influenced from above-mentioned plasma.In such a case it is possible to made using above-mentioned impedance adjustment component
Electrical impedance from the above-mentioned pass through openings portion that above-mentioned plasma is seen is higher than above-mentioned guard block.Specifically, above-mentioned impedance
The electrical impedance for adjusting component can 8 Ω more than bigger than the electrical impedance of above-mentioned guard block.
In the plasma processing apparatus of the present invention, it could be formed with the internal face of above-mentioned process container and protect the inner wall
The protective film for the insulating properties that face influences from above-mentioned plasma.In such a case it is possible to made using above-mentioned impedance adjustment component
Electrical impedance from the above-mentioned pass through openings portion that above-mentioned plasma is seen is higher than said protection film.Specifically, above-mentioned impedance tune
The impedance of integeral part can 8 Ω more than bigger than the electrical impedance of the protective film of above-mentioned insulating properties.
In the plasma processing apparatus of the present invention, above-mentioned process container can be formed by aluminium, the protection of above-mentioned insulating properties
Film can be formed by pellumina.
In the plasma processing apparatus of the present invention, can have as above-mentioned pass through openings portion and be used for from external observation
State the observation opening portion of the inside of process container.In this case, in the above-mentioned process container of above-mentioned observation opening portion
The end of private side, can be provided with for shield electromagnetic wave into above-mentioned observation opening portion have multiple holes, by
The electromagnetic wave shielding plate that the material of electric conductivity is formed.
Invention effect
Plasma processing apparatus according to the present invention, using impedance adjustment component, can effectively prevent door opening portion
In local plasma generation.
Brief description of the drawings
Fig. 1 is the composition for the inductive couple plasma processing device for showing schematically an embodiment of the invention
Sectional view.
Fig. 2 is 2 side walls of main body container for representing to see from the inside of the inductive couple plasma processing device of Fig. 1
Composition stereogram.
Fig. 3 is the sectional view for amplifying expression around the door opening portion by the side wall of main body container.
Fig. 4 is will to amplify the sectional view of expression around the door opening portion of the side wall of main body container in first variation.
Fig. 5 is to amplify the front elevation represented around the observation opening portion by the side wall of main body container.
Fig. 6 is to amplify the sectional view represented around the observation opening portion by the side wall of main body container.
Fig. 7 is will to amplify the section represented around the observation opening portion of the side wall of main body container in the second variation
Figure.
Description of reference numerals
1 ... inductive couple plasma processing device；2A ... main body containers；2B ... upper containers；4 ... antenna chambers；5 ... places
Manage room；6 ... dielectric walls；7 ... covers；8 ... Suspensions (suspender)；13 ... antennas；14 ... adaptations；15 ... high frequencies
Power supply；16 ... backbars；20 ... gas supply devices；21 ... gas supply pipes；22 ... pedestals (susceptor)；22A ... is loaded
Face；24 ... insulator frames；25 ... pillars；26 ... bellowss；28 ... adaptations；29 ... high frequency electric sources；30 ... exhaust apparatus；31…
Exhaust pipe；41 ... door opening portions；43 ... observation opening portions；45 ... insulating elements；47 ... covers；50 ... gate valves；60 ... linings
Pad (liner)；S ... substrates.
Embodiment
In the following, it is described with reference to the plasma processing apparatus of embodiments of the present invention.Fig. 1 is to show schematically this
The sectional view of the composition of the inductive couple plasma processing device 1 of one embodiment of invention.Wherein, in the following, with sensing
Illustrated exemplified by coupled plasma processing unit, but the present invention can equally fit arbitrary plasma processing apparatus
With.
Glass substrate (hereinafter referred to as " the base of inductive couple plasma processing device 1 shown in Fig. 1 to such as FPD
Plate ") S progress plasma etch process.Illustrated as FPD by liquid crystal display (LCD：Liquid Crystal
Display), electroluminescent (EL：Electro Luminescence) display, plasma display (PDP：Plasma
Display Panel) etc..
Inductive couple plasma processing device 1 includes the process container 2 with main body container 2A and upper container 2B.
＜ main body containers ＞
Main body container 2A is the container of the square tube shape with bottom wall 2b and 4 side wall 2c.In addition, main body container 2A can be with
For the container of cylindrical shape.Material as main body container 2A can use the conductive material such as aluminium, aluminium alloy.In conduct
In the case of the materials'use aluminium of main body container 2A, alumina treatment is implemented (at anodic oxidation to the internal face of main body container 2A
Reason), in order to avoid produce pollutant from the internal face of main body container 2A.In addition, main body container 2A is grounded.Main body container 2A formed with
Multiple pass through openings portions.Stated later for the composition in these pass through openings portions.
＜ upper containers ＞
Upper container 2B includes：Top section 2a；Configuration is on the top of main body container 2A by the space in process container 2
The dielectric walls 6 in 2 spaces above and below being divided into；With the cover 7 and backbar of the supporting member as support dielectric wall 6
16。
Formed with antenna chamber 4 in upper container 2B, it is situated between in main body container 2A formed with process chamber 5, this 2 rooms by electricity
Matter wall 6 separates.That is, antenna chamber 4 is formed in the space of the upside of the dielectric walls 6 in process container 2, and process chamber 5 is formed in place
Manage the space of the downside of the dielectric walls 6 in container 2.So dielectric walls 6 form the bottom of antenna chamber 4 and form processing
The top section of room 5.Process chamber 5 remain it is airtight, thus to substrate S carry out corona treatment.
Dielectric walls 6 are in have generally square shape or the upper surface of rectangular shape and bottom surface and 4 sides
Tabular.The thickness of dielectric walls 6 is, for example, 30mm.Dielectric walls 6 are formed by dielectric substance.Material as dielectric walls 6
Expect ceramics, the quartz such as can use Al2O3.In addition, dielectric walls 6 can be divided into multiple such as 4 parts.
Cover 7 is arranged on the lower part of upper container 2B.Cover 7 is configured to be positioned at the upper end of main body container 2A.Lid
Component 7 is configured on main body container 2A so as to which process container 2 be closed, and opens process container 2 by leaving main body container 2A
Put (unlimited).In addition, cover 7 can be formed as one with upper container 2B.
Backbar 16 is in such as cross shape, and dielectric walls 6 are supported by cover 7 and backbar 16.
Inductive couple plasma processing device 1 is also equipped with each having what is be connected with the top section 2a of upper container 2B
The Suspension 8 of multiple cylindrical shapes of upper end.In fig. 1 it is illustrated that 3 Suspensions 8, but the quantity of Suspension 8 is any
's.Backbar 16 is connected with 8 bottom of Suspension.In this way, backbar 16 is configured to by multiple Suspensions 8 from upper container 2B
Top section 2a suspension, in the position of the substantial middle of the above-below direction of the inside of process container 2, maintenance level state.
In backbar 16 formed with the gas flow path (not shown) from gas supply device 20 described later supply processing gas
With the multiple opening portions (not shown) released for being fed into the processing gas of the gas flow path.Material as backbar 16
Conductive material can be used.Metal material as the conductive material preferably using aluminium etc..In the material as backbar 16
In the case that material uses aluminium, alumina treatment (anodized) is implemented to the inside and outside surface of backbar 16 in order to avoid from surface
Produce pollutant.
＜ gas supply devices ＞
Gas supply device 20 is additionally provided with the outside of main body container 2A.Gas supply device 20 is for example via being inserted into
The gas supply pipe 21 of hollow bulb of the Suspension 8 in center is connected with the gas flow path (not shown) of backbar 16.Gas supplies
Device 20 is used to supply processing gas used in corona treatment.When carrying out corona treatment, processing gas passes through
Gas supply pipe 21, the gas flow path in backbar 16 and opening portion are supplied in process chamber 5.It can be used as processing gas
Such as SF6 gases.
＜ the first high frequency supply units ＞
Inductive couple plasma processing device 1 also has to be situated between in the inside of antenna chamber 4, the i.e. outside of process chamber 5 and electricity
The high frequency antenna (hereinafter referred to as " antenna " of the top configuration of matter wall 6.)13.Antenna 13 is in for example generally square plane side
Shape swirl shape.Antenna 13 is configured on the upper surface of dielectric walls 6.
The outside of process container 2 is provided with adaptation 14 and high frequency electric source 15.One end of antenna 13 is via adaptation 14
It is connected with high frequency electric source 15.The other end of antenna 13 is connected with the inner wall of upper container 2B, is grounded via main body container 2A.Right
When substrate S carries out corona treatment, antenna 13 obtains the RF power (example of induction field formation from the supply of high frequency electric source 15
Such as, the RF power of 13.56MHz).Thus, induction field is formed in process chamber 5 by antenna 13.The induction field makes place
Process gases is converted into plasma.
＜ mounting tables ＞
Inductive couple plasma processing device 1 is also equipped with pedestal (mounting table) 22, insulator frame for loading substrate S
24th, pillar 25 and bellows (bellows) 26.The lifting gear (not shown) of lower section of the pillar 25 with being arranged on main body container 2A
Connection, is protruded by being formed in the opening portion 2b1 of bottom wall 2b of main body container 2A in process chamber 5.In addition, during pillar 25 has
Empty portion.Insulator frame 24 is arranged on pillar 25.The insulator frame 24 is in the box-like of upper opening.At the bottom of insulator frame 24
Opening portion of the portion formed with the hollow bulb continuous (being connected) with pillar 25.Bellows 26 surround pillar 25, with insulator frame 24 and
The inner wall of the bottom wall 2b of main body container 2A airtightly connects.Thus, the air-tightness of process chamber 5 is maintained.
Pedestal 22 is accommodated in insulator frame 24.Pedestal 22 has the mounting surface 22A for being used for loading substrate S.As pedestal
22 material can use the conductive material such as aluminium.In the case of the materials'use aluminium as pedestal 22, to pedestal 22
Surface implement alumina treatment (anodized), in order to avoid from surface produce pollutant.
＜ the second high frequency supply units ＞
Adaptation 28 and high frequency electric source 29 are additionally provided with the outside of process container 2.Pedestal 22 is via being inserted into insulator
The energization rod of the opening portion of frame 24 and the hollow bulb of pillar 25 is connected with adaptation 28, and via the adaptation 28 and high-frequency electrical
Source 29 connects.When carrying out corona treatment to substrate S, the RF power of biasing is supplied to pedestal 22 from high frequency electric source 29
(for example, RF power of 380kHz).The RF power is used to the ion in plasma being efficiently introduced into be placed in base
Substrate S on seat 22.
＜ exhaust apparatus ＞
Multiple exhaust apparatus 30 are additionally provided with the outside of process container 2.Exhaust apparatus 30 holds via with being formed in main body
The exhaust pipe 31 of the exhaust outlet 2b2 connections at multiple positions of the bottom wall 2b of device 2A, is connected with process chamber 5.Substrate S is being carried out etc.
During gas ions processing, the air in process chamber 5 is exhausted in exhaust apparatus 30, will be maintained vacuum or decompression in process chamber 5
Atmosphere.
＜ pass through openings portion ＞
Fig. 2 is represent to see from the inside of the inductive couple plasma processing device 1 of Fig. 12 of main body container 2A
The stereogram of the composition of side wall 2c.In addition, for convenience of description, insulating element 45,47 and of cover stated in fig. 2, the back
49 illustration omitted of electromagnetic wave shielding plate.Main body container 2A a side wall 2c formed with the door opening portion as pass through openings portion
41.Door opening portion 41 is formed with growing crosswise, and can have the width bigger than the width of substrate S in a manner of by substrate S.Door opening
Portion 41 has：Opening bottom surface 41a and open top face 41b relative to each other as the wall for defining pass through openings；With 2 openings
Side 41c.
In addition, main body container 2A other side wall 2c formed with as the pass through openings portion different from door opening portion 41
Opening portion 43 is used in observation.Observation opening portion 43 has：Opening bottom surface relative to each other as the wall for defining pass through openings
43a and open top face 43b；With 2 open side 43c.
＜ gate valves ＞
Gate valve 50 is arranged on the outside of the side wall 2c of main body container 2A.Gate valve 50 has to be opened and closed by drive division (not shown)
The function in door opening portion 41.Gate valve 50 in off position under door opening portion 41 is airtightly sealed.So gate valve 50 is closing shape
The air-tightness of process chamber 5 is maintained under state can simultaneously transfer substrate S between process chamber 5 and outside in the on-state.
＜ pads ＞
In the inner side of 4 side wall 2c of main body container 2A, it is configured with pad 60 along the internal face of each side wall 2c and is used as and cover
Cover the internal face so as to protect the internal face not subject plasma influence insulating properties guard block.Pad 60 is for example by stone
English, form by the material of the aluminium of alumina treatment etc..The pad 60 for being arranged on the side wall 2c formed with door opening portion 41 has
With the 41 corresponding opening of door opening portion.The pad 60 for being arranged on the side wall 2c formed with observation opening portion 43 has and the sight
43 corresponding opening of opening portion is used in survey.
In addition, in the inductive couple plasma processing device 1 of present embodiment, the open top face in door opening portion 41
41b is also provided with pad 60 in a manner of covering open top face 41b.
＜ impedance adjustment components ＞
Then, the impedance adjustment component configured in door opening portion 41 is described in detail with reference to Fig. 3.Fig. 3 is to include door
The main portion sectional view of valve 50 and the side wall 2c in door opening portion 41.Opening bottom surface 41a in door opening portion 41 is configured with conduct
The insulating element 45 of impedance adjustment component.Insulating element 45 for example can be the form of tabular or sheet.
Insulating element 45 is by relative dielectric constant below 10, preferably less than 4 material is formed.Here, insulate as forming
The material of component 45 can be enumerated ceramic, poly- such as aluminium oxide (relative dielectric constant 10), quartzy (relative dielectric constant 4)
Synthetic resin such as tetrafluoroethene (relative dielectric constant 2), makrolon (relative dielectric constant 3) etc..Wherein, preferably using poly- four
Vinyl fluoride etc. has the resin sheet of the material of heat resistance as insulating element 45.
By configuring insulating element 45 in door opening portion 41, it is possible to increase the electricity from the door opening portion 41 that plasma is seen
Impedance (for correct, refers to the electrical impedance of the wall for being configured with insulating element 45 in door opening portion 41.Similarly hereinafter.), prevent exception
Electric discharge and the generation of local plasma.That is, insulating element 45 can be utilized to make from the door opening portion 41 that plasma is seen
Electrical impedance be more than main body container 2A pad 60, so, plasma current is difficult to flow through door opening portion 41, can prevent different
Often electric discharge and the generation of local plasma.
Insulating element 45 is arranged at the opening bottom surface 41a in door opening portion 41.Also can be in open side 41c
And/or open top face 41b sets insulating element 45, but go out from the viewpoint of clearance when ensuring to make substrate S by door opening portion 41
Hair, is preferably provided only on the opening bottom surface 41a in door opening portion 41.In addition, from preventing particle (particle) to be attached to substrate S's
Viewpoint is set out, it is also preferred that insulating element 45 is provided only on the opening bottom surface 41a in door opening portion 41.In open side 41c and/or open
When mouthful top surface 41b is also provided with insulating element 45, the electrical impedance in door opening portion 41 is excessive, these positions to pedestal 22 as supplying
The comparative electrode of bias power is difficult to play function.As a result, the sputtering to open side 41c and/or open top face 41b
(spatter) power dies down, and deposit easily adheres in corona treatment, it is possible to as accompanying deposition is stripped and
The reason for as particle.So from the viewpoint of particle is suppressed, it is also preferred that insulating element 45 is provided only on door opening portion 41
Be open bottom surface 41a.
Insulating element 45 is not limited to single component, can be divided into some.In addition, insulating element 45 is not limited to
Simple layer, can overlap multiple layers.In this case, the insulating element 45 as each layer, can use unlike material
Component.
In order to the electrical impedance improved from the door opening portion 41 that plasma is seen prevent local plasma and
Substantially ensure that the clearance with the substrate S by door opening portion 41, the thickness of insulating element 45 is for example preferably below 10mm, more
It is preferred that in the scope of more than 2mm below 10mm.As an example, the use of relative dielectric constant is 2 as insulating element 45
Polytetrafluoroethylene (PTFE) resin sheet in the case of, when its thickness is more than 2mm, the door opening seen from plasma can be made
Big 8 more than the Ω of pad 60 of the electrical impedance of insulating element 45 in portion 41 than main body container 2A.Moreover, experimentally it is able to really
Recognize：When the insulating element 45 and the difference of the electrical impedance of the pad 60 of main body container 2A in the door opening portion 41 seen from plasma
For 8 more than Ω when, be reliably prevented from the generation of paradoxical discharge in door opening portion 41 and local plasma.In addition,
In the case where insulating element 45 is multiple layers, preferably multiple layers of aggregate thickness is within the above range.
＜ covers ＞
As shown in figure 3, the inductive couple plasma processing device 1 of present embodiment is preferably as impedance adjustment component
Insulating element 45 on set cover 47.Cover 47 is stacked in insulating element 45, covers the table of insulating element 45
Face, thereby, it is possible to protect insulating element 45 not be subject to because plasma generation is damaged.
Cover 47 is preferably made of the material with plasma-resistance.As the material of cover 47, can enumerate
Such as aluminium oxide (Al2O3；Relative dielectric constant 10), the aluminium (relative dielectric constant 10) after the processing of oxidized aluminium, quartz it is (opposite
Dielectric constant 4) etc. ceramics, to be coated to yittrium oxide (yitia) sputtered films of bismuth the coil serving that aluminium base surface forms (normal with respect to dielectric
Number 11) etc..Wherein, cover 47 is preferably by plate that relative dielectric constant is 10 or so, form such as alumina plate.
In order to protect insulating element 45 not subject plasma influence and substantially ensure that with by the base in door opening portion 41
The clearance of plate S, the thickness of cover 47 is preferably for example below 20mm, more preferably in the scope of more than 10mm below 20mm.
In the inductive couple plasma processing device 1 of present embodiment, insulating element 45 is preferably by having and cover
The material of 47 identical or smaller relative dielectric constants is formed.So as to, cover 47 relative dielectric constant for 10 with
When upper, the material for being preferably less than 10 by the relative dielectric constant of insulating element 45 is formed, when the opposite dielectric of cover 47 is normal
When number is more than 4, the material for being preferably less than 4 by the relative dielectric constant of insulating element 45 is formed.As 45 He of insulating element
The example of the preferred compositions of cover 47, it is the resin sheet that is formed by polytetrafluoroethylene (PTFE) etc. that can enumerate insulating element 45, cap
Part 47 is the situation of the ceramic panel of aluminium oxide etc..In this case, in order to improve from the door opening portion that plasma is seen
41 electrical impedance prevents the generation of local plasma, and the thickness of resin sheet is for example set to the scope of more than 2mm below 10mm
Interior, the thickness of ceramic panel, such as can from the viewpoint of reliably protecting insulating element 45 subject plasma does not influence
It is set in the scope of more than 10mm below 18mm.Wherein, in order to substantially ensure that the clearance with the substrate S by door opening portion 41,
The thickness of the thickness of resin sheet and ceramic panel adds up to preferably such as below 20mm.
In the inductive couple plasma processing device 1 of present embodiment, configuration cover is combined in door opening portion 41
47 and the insulating element 45 that is formed by the relative dielectric constant material identical or smaller with cover 47, with lid is separately configured
The situation of component 47 is compared, can be by the required insulating element 45 of generation and cover of plasma local in order to prevent
47 total thickness suppresses smaller.As a result, door opening portion 41 itself need not be expanded, it becomes possible to substantially ensure that for making base
Clearances of the plate S needed for by door opening portion 41.In addition, even if applying big bias voltage to pedestal 22 from high frequency electric source 29,
It can prevent the generation of the local plasma in door opening portion 41.
＜ first variations ＞
As described above, implementing alumina treatment (anodized) to the internal face of main body container 2A, formed as exhausted
The pellumina of the protective film of edge, it is possible thereby to omit pad 60.Fig. 4 is represented in inductive couple plasma processing device 1
In be not provided with pad 60 and main body container 2A internal face formed as insulating properties protective film pellumina 61 deformation
Example.In the case where the internal face of main body container 2A forms pellumina 61, make to see from plasma using insulating element 45
Door opening portion 41 pellumina 61 of the electrical impedance than main body container 2A it is big, thus it is possible to prevent different in door opening portion 41
Often electric discharge and the generation of local plasma.
＜ electromagnetic wave shielding members ＞
Then, with reference to Fig. 5 and Fig. 6 to configuring in the electromagnetic wave shielding portion of the opening portion 43 of the observation as pass through openings portion
Part illustrates.Fig. 5 be comprising the observation being provided with the state of electromagnetic wave shielding member with the side wall 2c of opening portion 43 just
Face figure.Fig. 6 represent line VI -- VI in Fig. 5 to regarding section, be comprising the observation being provided with the state of electromagnetic wave shielding member
With the mian part sectional view of the side wall 2c of opening portion 43.The opening bottom surface 43a of observation opening portion 43, open top face 43b, 2
Open side 43c is provided with pad 60 in a manner of covering them.
Electromagnetic wave shielding plate 49 is plate-like, in order to shield electromagnetic wave, by the material of electric conductivity, such as stainless steel, aluminium
Metal is formed.In addition, electromagnetic wave shielding plate 49 has multiple hole 49a, so as to confirm from the external visual of process container 2 (
To) inside of process chamber 5.Electromagnetic wave shielding plate 49 configures the end of the private side of the main body container 2A in observation opening portion 43
Portion.Electromagnetic wave shielding plate 49 can be installed on main body for example, by the fixed component of the metal grade of screw 80 across pad 60
The side wall 2c of container 2A.Electromagnetic wave shielding plate 49 is for example turned on by screw 80 with the main body container 2A being grounded.
Electromagnetic wave shielding plate 49 is configured to the end of 5 side of process chamber in covering observation opening portion 43.In observation with opening
The another side of oral area 43 is configured with passes through window 70 such as what is formed as the material quartz.Can be via this through window 70, sight
Survey opening portion 43 and electromagnetic wave shielding plate 49 see that state in process chamber 5, such as plasma shine.By seeing
Survey and configure electromagnetic wave shielding plate 49 with opening portion 43, can prevent electromagnetic wave from entering in observation opening portion 43, can prevent from seeing
Survey the generation of the paradoxical discharge and local plasma used in opening portion 43.In addition, by configuring electromagnetic wave shielding plate 49, energy
It is enough to suppress attachment and deposit of the observation in opening portion 43.
Then, to implementing plasma to substrate S using the inductive couple plasma processing device 1 being constructed as described above
Processing action during body processing illustrates.
First, in the state of gate valve 50 is made to open, substrate S is moved into process chamber 5 using transport mechanism (not shown)
It is interior, and after being positioned in the mounting surface 22A of pedestal 22, substrate S is fixed on pedestal 22 using electrostatic chuck etc..
Then, from gas supply device 20 via the gas flow path (not shown) in gas supply pipe 21, backbar 16 with
And multiple opening portions discharge processing gas into process chamber 5, and utilize exhaust apparatus 30 via exhaust pipe 31 in process chamber 5
Vacuum exhaust is carried out, the pressure atmosphere of such as 1.33Pa or so thus will be maintained in process container.
Then, apply the high frequency of 13.56MHz to antenna 13 from high frequency electric source 15, thus, handled across dielectric walls 6
Uniform induction field is formed in room 5.Using the induction field so formed, plasma occurs for processing gas in process chamber 5
Body, generates highdensity inductively coupled plasma.Ion in the plasma so generated, by right from high frequency electric source 29
The RF power that pedestal 22 applies is efficiently introduced into substrate S, implements uniform corona treatment to substrate S.
During corona treatment, by the use of the insulating element 45 as impedance adjustment component, it will see from plasma
The electrical impedance in door opening portion 41 maintain must be higher than 60 (or pelluminas 61) of pad, therefore, the part in door opening portion 41
The generation of plasma be suppressed.In addition, suppressing electromagnetic wave by electromagnetic wave shielding plate 49 enters observation opening portion 43
It is interior, to suppress the generation of the local plasma in observation opening portion 43.So as to be filled in inductively coupled plasma processing
In putting 1, plasma can be stably generated in process chamber 5, can realize processing in the face of substrate S between substrate S
Homogenization.
The second variations of ＜ ＞
Then, the second variation that impedance adjustment component is configured with observation opening portion 43 is illustrated with reference to Fig. 7.
As described above, by installing electromagnetic wave shielding plate 49 (with reference to Fig. 6) in observation opening portion 43, observation opening portion can be prevented
The generation of paradoxical discharge and local plasma in 43.Electromagnetism is installed in observation opening portion 43 but it is also possible to substitute
Wave screen shield plate 49, and as shown in fig. 7, insulating element 46 of the configuration as impedance adjustment component.
Fig. 7 is the sectional view for including the observation major part of the side wall 2c of opening portion 43 in the second variation.Seeing
Survey is configured with the insulating element 46 as impedance adjustment component by the use of the opening bottom surface 43a of opening portion 43.In addition, insulating element 46 is not
Opening bottom surface 43a can be only arranged on and open side 43c and/or open top face 43b can be arranged on.Additionally, it is preferred that
Cover 48 is set on the insulating element 46 as impedance adjustment component.
The insulating element 46 of observation opening portion 43 and the composition of cover 48 are arranged on, except this point is lacked in the limitation of thickness
Outside, other insulating elements 45 and cover 47 with door opening portion 41 is identical.In this variation, observation is arranged on opening
The thickness of the insulating element 46 of oral area 43, can be arranged to improve the electricity from the observation that plasma is seen with opening portion 43
Impedance (for correct, refers to the electrical impedance of the wall for being configured with insulating element 46 in observation opening portion 43.) prevent abnormal put
The generation of electricity and local plasma and sufficiently arbitrary thickness, be for example set as the scope of more than 10mm below 20mm
It is interior.In addition, being arranged on observation can be arranged to the thickness of the cover 48 of opening portion 43 in order to reliably protect insulating element
46 not subject plasma influence and sufficiently arbitrary thickness, be for example set as in the scope of more than 10mm below 20mm.
It is as described above illustrated, inductive couple plasma processing device 1 according to the present embodiment, by the use of as
The insulating element 45 of impedance adjustment component, can effectively prevent the generation of the local plasma in door opening portion 41.
More than, embodiments of the present invention are described in detail by with the purpose of illustration, but the invention is not restricted to above-mentioned reality
Mode is applied, various modifications can be carried out.For example, in the above-described embodiment, list the example of inductively coupled plasma device
Son, but the present invention does not limit then if the plasma processing apparatus for having opening portion in process container, can apply, example
It such as can also apply to parallel plate-type plasma device, surface wave plasma device, ECR (Electron
Cyclotron Resonance：Electron cyclotron resonace) plasma device, helicon (helicon) plasma device etc. its
The plasma device of its mode.In addition, being not limited to dry-etching (dry etching) device, similarly can be applied into
Film device and ashing (ashing) device etc..
In addition, the invention is not restricted to the situation using FPD substrates as handled object, such as can also apply to semiconductor
Chip or the situation that substrate used for solar batteries is handled object.
Claims (9)
1. a kind of plasma processing apparatus, it is handled substrate in the inside of process container generation plasma, described
Plasma processing apparatus is characterized in that：
The process container includes the wall formed with pass through openings portion,
The pass through openings portion has opening bottom surface relative to each other and open top face and 2 open sides,
The impedance adjustment component for the electrical impedance for adjusting the pass through openings portion is at least provided with the opening bottom surface,
Also be stacked on the impedance adjustment component by dielectric formation and the protection impedance adjustment component from
The cover that plasma influences,
The material structure that the impedance adjustment component is smaller than the cover by relative dielectric constant and relative dielectric constant is less than 4
Into,
The pass through openings portion is the door opening portion of substrate described in carrying-in/carrying-out.
2. plasma processing apparatus as claimed in claim 1, it is characterised in that：
The impedance adjustment component is formed as sheet by the resin material that relative dielectric constant is less than 4.
3. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that：
The impedance adjustment component is the piece formed by polytetrafluoroethylene (PTFE).
4. plasma processing apparatus as claimed in claim 1, it is characterised in that：
The cover is formed by ceramics.
5. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that：
There is the protection for the insulating properties for protecting the internal face to be influenced from the plasma along the internal face of the process container
Component,
Make the electrical impedance from the pass through openings portion that the plasma is seen than the guarantor using the impedance adjustment component
It is high to protect component.
6. plasma processing apparatus as claimed in claim 5, it is characterised in that：
Electrical impedance 8 Ω more than bigger than the electrical impedance of the guard block of the impedance adjustment component.
7. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that：
The process container internal face formed with the guarantor of insulating properties for protecting the internal face to be influenced from the plasma
Cuticula,
Make the electrical impedance from the pass through openings portion that the plasma is seen than the guarantor using the impedance adjustment component
Cuticula is high.
8. plasma processing apparatus as claimed in claim 7, it is characterised in that：
Big 8 more than the Ω of the electrical impedance of the protective film of insulating properties described in the impedance ratio of the impedance adjustment component.
9. plasma processing apparatus as claimed in claim 7, it is characterised in that：
The process container is formed by aluminium, and the protective film of the insulating properties is formed by pellumina.
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| JP2013207828A JP6435090B2 (en) | 2013-10-03 | 2013-10-03 | Plasma processing equipment |
| JP2013-207828 | 2013-10-03 |
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| CN112635281B (en) * | 2019-09-24 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Component, hole sealing method thereof, plasma processing device and working method thereof |
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| CN101785080A (en) * | 2007-08-21 | 2010-07-21 | 松下电器产业株式会社 | Plasma processing device |
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| JP2804762B2 (en) * | 1988-07-19 | 1998-09-30 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP3204544B2 (en) * | 1992-07-09 | 2001-09-04 | 東京エレクトロン株式会社 | Processing equipment |
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| US20040069223A1 (en) * | 2002-10-10 | 2004-04-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wall liner and slot liner for process chamber |
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| JP5217569B2 (en) * | 2008-03-31 | 2013-06-19 | 東京エレクトロン株式会社 | Plasma processing equipment |
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| TWI637660B (en) | 2018-10-01 |
| JP6435090B2 (en) | 2018-12-05 |
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| TW201534182A (en) | 2015-09-01 |
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