CN104505382A - 一种圆片级扇出PoP封装结构及其制造方法 - Google Patents
一种圆片级扇出PoP封装结构及其制造方法 Download PDFInfo
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Abstract
本发明公开了一种圆片级扇出PoP封装结构及其制造方法,该圆片级扇出PoP封装通过至少一个扇出PoP封装单元堆叠形成,相邻扇出PoP封装单元之间通过第二焊球实现互联,采用第二塑封材料进行包覆密封。扇出PoP封装单元包含IC芯片、第一塑封材料、第二粘贴材料、金属凸点结构、第一金属层、第二金属层、第一再布线金属走线层、第一介电材料层、第二再布线金属走线层、第二介电材料层、第一焊球和第二焊球。IC芯片的键合焊盘与第一再布线金属走线层互联。金属凸点结构构成模塑料通孔,模料通孔实现扇出PoP封装单元内的上、下封装体之间以及与外部结构的三维集成互联。制造该圆片级扇出PoP封装结构的主要方法:在第一载体圆片上配置金属基材圆片,在金属基材圆片上表面制作金属凸点结构,上芯,塑封,制作第一再布线金属走线层,配置第二载体圆片,去除第一载体圆片,对金属基材圆片下表面进行蚀刻,形成第二再布线金属走线层,堆叠回流焊,去除第二载体圆片,植球和回流焊工艺后形成扇出PoP封装单元,至少一个扇出PoP封装单元进行堆叠回流焊,塑封后形成圆片级扇出PoP封装。该发明解决了现有PoP封装技术所存在的封装密度、成本和可靠性问题。
Description
技术领域
本发明涉及微电子封装技术以及三维集成技术领域,特别涉及一种三维圆片级扇出PoP封装技术及其制造方法。
背景技术
随着电子封装产品向高密度、多功能、低功耗、小型化方向的不断发展,采用三维集成技术的***级封装(System in Package,SiP)取得了突飞猛进的发展。硅通孔(Through Silicon Via,TSV)技术方案,由于具有堆叠密度最高,外形尺寸最小,极大提升芯片速度和降低功耗等特点,是实现三维集成技术的最优方案。然而,目前TSV技术面临的制造难度、工艺成本以及成品良率、可靠性等问题及其突出。现有成熟的三维集成技术主要为堆叠封装(Package on Package,PoP),其中上、下封装体通常为采用印刷电路基板的封装结构。由于印刷电路基板具有一定的厚度,而且成本较高,导致整个PoP封装的高度和成本难以得到有效降低,难以满足高密度和低成本的要求。现有的PoP封装的由于上、下封装体结构的差异,导致制造工艺过程中封装翘曲难以得到有效控制,严重影响焊球互联结构的可靠性。现有PoP封装的制造工艺由于采用传统的非圆片级封装制造模式,导致效率低而且成本高,不利于PoP封装的推广。
因此,仍然需要新的封装结构和制造技术,以解决现有技术所存在的问题。
发明内容
本发明针对三维PoP封装技术提出一种封装结构和制造方法,以解决现有PoP封装技术所存在的封装密度、成本和可靠性问题。
为了实现上述目的,本发明采用下述技术方案:
一种圆片级扇出PoP封装结构,通过至少一个扇出PoP封装单元堆叠形成;一个扇出PoP封装单元由两个相同结构的封装体构成;
所述一个封装体包括有金属凸点结构、IC芯片、键合焊盘、第二粘贴材料,第一塑封材料、第一再布线金属走线层、第一金属层、第一介电材料层、第二再布线金属走线层、第二介电材料层、第二金属层;所述IC芯片带有键合焊盘,第二粘贴材料粘贴于IC芯片的表面,第一塑封材料包围金属凸点结构和IC芯片,IC芯片的键合焊盘与第一再布线金属走线层连接,第一再布线金属走线层上制作有第一金属层,第一介电材料层包围第一再布线金属走线层,并涂覆在IC芯片、金属凸点结构和第一塑封材料同一侧面;在IC芯片、金属凸点结构和第一塑封材料另一个侧面涂覆有第二介电材料层,第二介电材料层包围第二再布线金属走线层,第二再布线金属走线层上制作有第一金属层;
两个相对放置的封装体的第二金属层由第一焊球连接,并在一个封装体的第一金属层上连接第二焊球,形成一个扇出PoP封装单元;
第二焊球再连接有一个相对放置的扇出PoP封装单元的第一金属层,所述未植球部分的第一金属层、第一焊球及其连接的一对第二金属层、第二焊球及其连接的一对第一金属层包围有第二塑封材料,形成一个圆片级扇出PoP封装结构。
金属凸点结构可以是但不局限于铜、铜合金、铁、铁合金、镍、镍合金、钨金属材料。
第一再布线金属走线层和第二再布线金属走线层可以是但不局限于铜、铜合金、铁、铁合金、镍、镍合金、钨金属材料。
IC芯片的有源面、金属凸点结构的上表面和第一塑封材料的上表面在同一平面上。
利用该结构,首先封装体由于无基板结构,直接通过再布线金属走线层实现与外部环境的互联,因此整体封装体厚度可以得到大幅降低,制造成本也得到降低;进一步地,低成本的模塑料通孔TMV具有TSV同样的上、下结构互联导通的功能,因此可取代TSV结构实现细节距互联端口,从而使上、下封装体之间,以及与外部结构的I/O互联通道数量和密度得到大幅提高,提升了封装的密度;另外,圆片级扇出PoP封装结构的扇出(Fan-Out)特性可显著增加PoP封装的I/O互联通道数量。最后,由于圆片级扇出PoP封装结构中所有的扇出PoP封装单元相同,而且都通过面对面方式进行堆叠回流焊,因此圆片级扇出PoP封装具有高度对称性,从而可极大改善封装的翘曲。
一种圆片级扇出PoP封装结构的制造方法,具体按照以下步骤进行:
步骤1:准备第一载体圆片,通过第一粘贴材料将金属基材圆片配置于第一载体圆片上;
步骤2:在金属基材圆片的上表面通过蚀刻或者电镀方法制作金属凸点结构;
步骤3:通过第二粘贴材料将IC芯片配置于金属基材圆片上,IC芯片带有键合焊盘;
步骤4:采用高温加热注塑方法,将低吸水率、低应力的环保型第一塑封材料包覆密封IC芯片和金属凸点结构,并裸露出IC芯片的有源面和金属凸点结构的上表面,塑封后进行烘烤后固化工艺;
步骤5:在IC芯片的有源面、金属凸点结构的上表面和第一塑封材料的上表面涂覆第一介电材料层,通过曝光、显影方法在第一介电材料层上形成图形,采用电镀或者化学镀方法制作第一再布线金属走线层,在第一再布线金属走线层上制作第一金属层,采用第一介电材料层涂覆包裹第一再布线金属走线层,IC芯片的键合焊盘与第一再布线金属走线层互联;
步骤6:通过第三粘贴材料将第二载体圆片粘贴配置于第一金属层和第一介电材料层上;
步骤7:通过机械、蚀刻或者曝光方法去除第一载体圆片和第一粘贴材料;
步骤8:采用蚀刻方法对金属基材圆片的下表面进行蚀刻,形成第二再布线金属走线层,在第二再布线金属走线层上制作第二金属层,采用第二介电材料层涂覆包裹第二再布线金属走线层;
步骤9:在第二金属层上进行植球工艺,并进行回流焊工艺,得到呈阵列排布的第一焊球;
步骤10:将上述步骤制作形成的结构进行面对面堆叠回流焊工艺,第一焊球成为上、下结构的互联结构;
步骤11:通过机械、蚀刻或者曝光方法去除第二载体圆片和第三粘贴材料;
步骤12:在第一金属层上进行植球和回流焊工艺,得到呈阵列排布的第二焊球,形成扇出PoP封装单元;
步骤13:将至少一个扇出PoP封装单元进行堆叠回流焊,第二焊球成为上、下相邻扇出PoP封装单元的互联结构;
步骤14:采用高温加热注塑方法,将第二塑封材料进行包覆密封,塑封后进行烘烤后固化工艺,形成圆片级扇出PoP封装;
步骤15:切割形成单颗圆片级扇出PoP封装。
附图说明
图1是在第一载体圆片上配置金属基材圆片的示意图;
图2是在金属基材圆片上制作金属凸点结构的示意图;
图3是在金属基材圆片上配置IC芯片的示意图;
图4是将IC芯片和金属凸点结构包覆密封在第一塑封材料内,并裸露出IC芯片的有源面和金属凸点结构的上表面的示意图;
图5是制作第一再布线金属走线层,在第一再布线金属走线层上制作第一金属层,采用第一介电材料层涂覆包裹第一再布线金属走线层的示意图;
图6是配置第二载体圆片的示意图;
图7是去除第一载体圆片的示意图;
图8是采用蚀刻方法对金属基材圆片的下表面进行蚀刻,形成第二再布线金属走线层,在第二再布线金属走线层上制作第二金属层,采用第二介电材料层涂覆包裹第二再布线金属走线层的示意图;
图9是在第二金属层上进行植球和回流焊工艺,得到第一焊球阵列的示意图;
图10是进行面对面堆叠回流焊工艺的示意图;
图11是去除第二载体圆片的示意图;
图12是在第一金属层上进行植球和回流焊工艺,得到第二焊球阵列,形成扇出PoP封装单元的示意图;
图13是将至少一个扇出PoP封装单元进行堆叠回流焊的示意图;
图14是圆片级扇出PoP封装一实施例的示意图。
图中,100为第一载体圆片、100a为第一粘贴材料、200为第二载体圆片、200a为第三粘贴材料、1为金属基材圆片、2为金属凸点结构、3为IC芯片、4为键合焊盘、5为第二粘贴材料,6为第一塑封材料、7为第一再布线金属走线层、8为第一金属层、9为第一介电材料层、10为第二再布线金属走线层、11为第二介电材料层、12为第二金属层、13为第一焊球、14为第二焊球、15为第二塑封材料。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明的具体实施方式作进一步详细描述。
如图14所示,一种圆片级扇出PoP封装结构,通过至少一个扇出PoP封装单元堆叠形成;一个扇出PoP封装单元由两个相同结构的封装体构成;
所述一个封装体包括有金属凸点结构2、IC芯片3、键合焊盘4、第二粘贴材料5,第一塑封材料6、第一再布线金属走线层7、第一金属层8、第一介电材料层9、第二再布线金属走线层10、第二介电材料层11、第二金属层12;所述IC芯片3带有键合焊盘4,第二粘贴材料5粘贴于IC芯片3的表面,第一塑封材料6包围金属凸点结构2和IC芯片3,IC芯片3的键合焊盘4与第一再布线金属走线层7连接,第一再布线金属走线层7上制作有第一金属层8,第一介电材料层9包围第一再布线金属走线层7,并涂覆在IC芯片3、金属凸点结构2和第一塑封材料6同一侧面;在IC芯片3、金属凸点结构2和第一塑封材料6另一个侧面涂覆有第二介电材料层11,第二介电材料层11包围第二再布线金属走线层10,第二再布线金属走线层10上制作有第一金属层12;
第一焊球13连接两个相对放置的封装体的第二金属层12,并在一个封装体的第一金属层8上连接第二焊球14,形成一个扇出PoP封装单元;
第二焊球14再连接有一个相对放置的扇出PoP封装单元的第一金属层8,所述未植球部分的第一金属层8、第一焊球13及其连接的一对第二金属层12、第二焊球14及其连接的一对第一金属层8包围有第二塑封材料15,形成一个圆片级扇出PoP封装结构。
IC芯片3的键合焊盘4与第一再布线金属走线层7互联。金属凸点结构2构成模塑料通孔。模塑料通孔实现扇出PoP封装单元内的上、下封装体之间,以及与外部结构的三维集成互联。
下面将以本发明中实施例的圆片级扇出PoP封装结构为例,以图1至图14来详细说明圆片级扇出PoP封装结构的制造流程。
一种圆片级扇出PoP封装结构的制造方法,具体按照以下步骤进行:
步骤1:准备第一载体圆片100,通过第一粘贴材料100a将金属基材圆片1配置于第一载体圆片100上,如图1所示。
第一载体圆片100可以为金属、晶圆、玻璃、高分子有机材料等。金属基材圆片1可以为铜、铜合金、铁、铁合金、镍、镍合金等金属材料,优先选择铜或者铜合金材料,第一粘贴材料100a可以是但不局限于胶带、高分子树脂等材料。金属基材圆片1的尺寸不大于第一载体圆片100的尺寸。
步骤2:在金属基材圆片1的上表面制作金属凸点结构2,如图2所示。
在本发明中,金属凸点结构2采用蚀刻或者电镀方法制作。在蚀刻方法中,在金属基材圆片1的上表面涂覆或者粘贴光感湿膜或者干膜,通过曝光显影方法制作图形,以具有图形的光感湿膜或者干膜作为抗蚀层,选用仅蚀刻金属基材圆片1的蚀刻液对其上表面进行蚀刻,形成金属凸点结构2。在电镀方法中,在金属基材圆片1的上表面涂覆或者粘贴具有一定厚度的光感湿膜或者干膜,通过曝光显影方法制作图形,采用电镀方法制作形成金属凸点结构2,光感湿膜或者干膜的厚度要超过所制作的金属凸点结构2的高度尺寸。在本发明中,金属凸点结构2可以是但不局限于铜、铜合金、铁、铁合金、镍、镍合金、钨等金属材料。
步骤3:通过第二粘贴材料5将IC芯片3配置于金属基材圆片1上,IC芯片3带有键合焊盘4,如图3所示。
在本发明中,第二粘贴材料5可以是粘片胶带、含银颗粒的环氧树脂等材料。配置IC芯片3后,需对第二粘贴材料5进行高温烘烤工艺。
步骤4:采用高温加热注塑方法,将低吸水率、低应力的环保型第一塑封材料6包覆密封IC芯片3和金属凸点结构2,并裸露出IC芯片3的有源面和金属凸点结构2的上表面,塑封后进行烘烤后固化工艺,如图4所示。
第一塑封材料6为低吸水率、低应力、环保型的热固性聚合物等材料。IC芯片3的有源面、金属凸点结构2的上表面和第一塑封材料6的上表面在同一平面上。
步骤5:在IC芯片3的有源面、金属凸点结构2的上表面和第一塑封材料6的上表面涂覆第一介电层9,通过曝光、显影方法在第一介电材料层9上形成图形,采用电镀或者化学镀方法制作第一再布线金属走线层7,在第一再布线金属走线层7上制作第一金属层8,采用第一介电材料层9涂覆包裹第一再布线金属走线层7。IC芯片3的键合焊盘4与第一再布线金属走线层7互联,如图5所示。
在本发明中,第一再布线金属走线层7可以是但不局限于铜、铜合金、铁、铁合金、镍、镍合金、钨等金属材料,第一金属层8可以是但不限于是铜、镍、金、钛、锡等金属多层结构组合,第一介电材料层9可以是但不局限于热固性塑封材料、塞孔树脂、油墨以及阻焊绿油等绝缘材料。
步骤6:通过第三粘贴材料200a将第二载体圆片200粘贴配置于第一金属层8和第一介电材料层9上,如图6所示。
通过第三粘贴材料200a将上述步骤5制作形成的结构配置于第二载体圆片200上。在本发明中,第二载体圆片200可以为金属、晶圆、玻璃、高分子有机材料等,第三粘贴材料200a可以是但不局限于胶带、高分子树脂等材料。
步骤7:通过机械、蚀刻或者曝光方法去除第一载体圆片100和第一粘贴材料100a,如图7所示。
步骤8:采用蚀刻方法对金属基材圆片1的下表面进行蚀刻,形成第二再布线金属走线层10,在第二再布线金属走线层10上制作第二金属层12,采用第二介电材料层11涂覆包裹第二再布线金属走线层10,如图8所示。
在本发明中,第二金属层12是但不限于是铜、镍、金、钛、锡等金属多层结构组合。
步骤9:在第二金属层12上进行植球工艺,并进行回流焊工艺,得到呈阵列排布的第一焊球13,如图9所示。
步骤10:将上述步骤9制作形成的结构进行面对面堆叠回流焊工艺,第一焊球13成为上、下结构的互联结构,如图10所示。
步骤11:通过机械、蚀刻或者曝光方法去除第二载体圆片200和第三粘贴材料200a,如图11所示。
步骤12:在第一金属层8上进行植球和回流焊工艺,得到呈阵列排布的第二焊球14,形成扇出PoP封装单元,如图12所示。
步骤13:将至少一个扇出PoP封装单元进行堆叠回流焊,第二焊球14成为上、下相邻扇出PoP封装单元的互联结构,如图13所示。
步骤14:采用高温加热注塑方法,将第二塑封材料15进行包覆密封,塑封后进行烘烤后固化工艺,形成圆片级扇出PoP封装,如图14所示。
步骤15:切割形成单颗圆片级扇出PoP封装。如图14所示,该图即为切割后的单颗POP封装件。
IC芯片3的有源面指具有集成电路的那一面,一般位于芯片的表面,图中未示出。
模塑料通孔英文为TMV(Through Mold Via)。
采用刀片切割方法分离圆片级扇出PoP封装的产品阵列,形成单个圆片级扇出PoP封装。
对本发明的实施例的描述是出于有效说明和描述本发明的目的,并非用以限定本发明,任何所属本领域的技术人员应当理解:凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (5)
1.一种圆片级扇出PoP封装结构,其特征在于,通过至少一个扇出PoP封装单元堆叠形成;一个扇出PoP封装单元由两个相同结构的封装体构成;
所述一个封装体包括有金属凸点结构(2)、IC芯片(3)、键合焊盘(4)、第二粘贴材料(5),第一塑封材料(6)、第一再布线金属走线层(7)、第一金属层(8)、第一介电材料层(9)、第二再布线金属走线层(10)、第二介电材料层(11)、第二金属层(12);所述IC芯片(3)带有键合焊盘(4),第二粘贴材料(5)粘贴于IC芯片(3)的表面,第一塑封材料(6)包围金属凸点结构(2)和IC芯片(3),IC芯片(3)的键合焊盘(4)与第一再布线金属走线层(7)连接,第一再布线金属走线层(7)上制作有第一金属层(8),第一介电材料层(9)包围第一再布线金属走线层(7),并涂覆在IC芯片(3)、金属凸点结构(2)和第一塑封材料(6)同一侧面;在IC芯片(3)、金属凸点结构(2)和第一塑封材料(6)另一个侧面涂覆有第二介电材料层(11),第二介电材料层(11)包围第二再布线金属走线层(10),第二再布线金属走线层(10)上制作有第一金属层(12);
两个相对放置的封装体的第二金属层(12)由第一焊球(13)连接,并在一个封装体的第一金属层(8)上连接第二焊球(14),形成一个扇出PoP封装单元;
第二焊球(14)再连接有一个相对放置的扇出PoP封装单元的第一金属层(8),所述未植球部分的第一金属层(8)、第一焊球(13)及其连接的一对第二金属层(12)、第二焊球(14)及其连接的一对第一金属层(8)包围有第二塑封材料(15),形成一个圆片级扇出PoP封装结构。
2.根据权利要求1所述一种圆片级扇出PoP封装结构,其特征在于,金属凸点结构(2)是但不局限于铜、铜合金、铁、铁合金、镍、镍合金、钨金属材料。
3.根据权利要求1所述一种圆片级扇出PoP封装结构,其特征在于,第一再布线金属走线层(7)和第二再布线金属走线层(10)是但不局限于铜、铜合金、铁、铁合金、镍、镍合金、钨金属材料。
4.根据权利要求1所述一种圆片级扇出PoP封装结构,其特征在于,IC芯片(3)的有源面、金属凸点结构(2)的上表面和第一塑封材料(6)的上表面在同一平面上。
5.一种圆片级扇出PoP封装结构的制造方法,其特征在于,具体按照以下步骤进行:
步骤1:准备第一载体圆片(100),通过第一粘贴材料(100a)将金属基材圆片(1)配置于第一载体圆片(100)上;
步骤2:在金属基材圆片(1)的上表面通过蚀刻或者电镀方法制作金属凸点结构(2);
步骤3:通过第二粘贴材料(5)将IC芯片(3)配置于金属基材圆片(1)上,IC芯片(3)带有键合焊盘(4);
步骤4:采用高温加热注塑方法,将低吸水率、低应力的环保型第一塑封材料(6)包覆密封IC芯片(3)和金属凸点结构(2),并裸露出IC芯片(3)的有源面和金属凸点结构(2)的上表面,塑封后进行烘烤后固化工艺;
步骤5:在IC芯片(3)的有源面、金属凸点结构(2)的上表面和第一塑封材料(6)的上表面涂覆第一介电材料层(9),通过曝光、显影方法在第一介电材料层(9)上形成图形,采用电镀或者化学镀方法制作第一再布线金属走线层(7),在第一再布线金属走线层(7)上制作第一金属层(8),采用第一介电材料层(9)涂覆包裹第一再布线金属走线层(7);IC芯片(3)的键合焊盘(4)与第一再布线金属走线层(7)互联;
步骤6:通过第三粘贴材料(200a)将第二载体圆片(200)粘贴配置于第一金属层(8)和第一介电材料层(9)上;
步骤7:通过机械、蚀刻或者曝光方法去除第一载体圆片(100)和第一粘贴材料(100a);
步骤8:采用蚀刻方法对金属基材圆片(1)的下表面进行蚀刻,形成第二再布线金属走线层(10),在第二再布线金属走线层(10)上制作第二金属层(12),采用第二介电材料层(11)涂覆包裹第二再布线金属走线层(10);
步骤9:在第二金属层(12)上进行植球工艺,并进行回流焊工艺,得到呈阵列排布的第一焊球(13);
步骤10:将上述步骤9制作形成的结构进行面对面堆叠回流焊工艺,第一焊球(13)成为上、下结构的互联结构;
步骤11:通过机械、蚀刻或者曝光方法去除第二载体圆片(200)和第三粘贴材料(200a);
步骤12:在第一金属层(8)上进行植球和回流焊工艺,得到呈阵列排布的第二焊球(14),形成扇出PoP封装单元;
步骤13:将至少一个扇出PoP封装单元进行堆叠回流焊,第二焊球(14)成为上、下相邻扇出PoP封装单元的互联结构;
步骤14:采用高温加热注塑方法,将第二塑封材料(15)进行包覆密封,塑封后进行烘烤后固化工艺,形成圆片级扇出PoP封装;
步骤15:切割形成单颗圆片级扇出PoP封装。
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