CN104465975A - Power-type LED integrated packaging structure - Google Patents
Power-type LED integrated packaging structure Download PDFInfo
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- CN104465975A CN104465975A CN201410796210.6A CN201410796210A CN104465975A CN 104465975 A CN104465975 A CN 104465975A CN 201410796210 A CN201410796210 A CN 201410796210A CN 104465975 A CN104465975 A CN 104465975A
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- heat
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- cuw
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Abstract
The invention discloses a power-type LED integrated packaging structure which comprises a radiating heat tube, a CuW heat sink, a Si substrate, an LED chip and a sapphire. The radiating heat tube is arranged at the bottommost end of the structure. The CuW heat sink is arranged on the radiating heat tube. The Si substrate is arranged on the CuW heat sink. The LED chip is arranged on the Si substrate. The sapphire is arranged on the LED chip. By the adoption of the technical scheme, the current density of the chip is increased; the heat dissipation effect is further improved; a silver reflection layer eliminates the light blocking phenomenon caused by an electrode and a lead, and therefore the structure has optimal characteristics with respect to electricity, light, heat and the like.
Description
Technical field
The present invention relates to the technical fields such as the optics of LED, calorifics, electricity, mechanics, structure and technique, be specifically related to a kind of power-type LED integrated encapsulation structure.
Background technology
Along with the development of lighting technology, the core that large power white light LED will be following illumination.White light LEDs is as new type light source, have compared with conventional light source that the life-span is long, volume is little, energy-conservation, efficient, fast response time, antidetonation, the advantage such as pollution-free, be considered to " green illumination light source " that can enter general lighting field, especially the birth of large power white light LED is called " the 4th revolution of lighting field " by industry, LED large-scale application in general lighting be an inevitable trend.
At present, the drive current of a lot of great power LED reaches 350mA, 700mA, very arrives 1A, and this will cause chip internal heat accumulation, causes the series of problems such as emission wavelength drift, light extraction efficiency decline, fluorescent material accelerated ageing and shortening in useful life.A lot of effort is made to the heat dissipation problem of great power LED in the industry: by chip epitaxial structure optimal design, surface texture technology etc. is used to improve external quantum efficiency in chip, reduce the lattice vibration that radiationless compound produces, fundamentally decrease radiating subassembly load; By optimized packaging structure, material, choice for use, based on methods such as aluminium base metal-core printed circuit board, pottery, composite metal substrates, is accelerated heat and is distributed to heat-radiating substrate from epitaxial loayer.Most producer also uses fin in high performance requirements occasion, relies on the methods such as strong convection heat radiation to promote great power LED cooling.However, single led product is also only in the level of 1 ~ 10W level at present, and heat-sinking capability is still waited to improve.
In addition, select gallium nitride as making LED chip material, the semi-conducting material of to take gallium nitride as the third generation semi-conducting material of representative be attention in the world in recent ten years, is with a wide range of applications in white light LEDs, short wavelength laser, ultraviolet detector and high temperature high power device.Optimal substrate for GaN growth is gallium nitride single crystal material naturally, and it can improve the crystal mass of epitaxial film greatly, reduces dislocation density, improves device operational lifetime, improves luminous efficiency, improves device operation current density.
And select heat sink as integrated encapsulation structure of tungsten-copper alloy, because it had both had the low expansion character of tungsten, have again the high thermal conduction characteristic of copper, its thermal coefficient of expansion and heat-conductivity conducting performance can be changed by the composition of adjustment tungsten copper, thus provide wider range of application to tungsten copper.Because Tungsten-copper Composites has very high thermal endurance and good heat-conductivity conducting, the thermal coefficient of expansion simultaneously matched with silicon chip, GaAs and ceramic material again, is therefore widely used in a semiconductor material.
Summary of the invention
For overcoming deficiency of the prior art, the object of the present invention is to provide a kind of power-type LED integrated encapsulation structure, be applied to production and the design of illuminative high-power LED, this structure has the optimal properties of the aspects such as electricity, light, heat, effectively improves performance and the light efficiency of LED.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the present invention is achieved through the following technical solutions:
A kind of power-type LED integrated encapsulation structure, comprise heat radiation heat pipe, CuW is heat sink, Si substrate, LED chip and sapphire, described heat radiation heat pipe is arranged on the lowermost end of described structure, it is heat sink that the top of described heat radiation heat pipe is provided with described CuW, described CuW is heat sink, and top is provided with described Si substrate, and described Si surface is provided with described LED chip, and the top of described LED chip is provided with described sapphire.
Further, described LED chip comprises P electrode and N electrode, the below of described P electrode and N electrode is respectively arranged with a metal salient point, and described Si substrate is connected by gold thread with the outside of described LED chip, is provided with the anti-layer of silver-colored light between described P electrode and PN junction.
Compared with prior art, the present invention has following beneficial effect:
Technical solution of the present invention, light takes out from Sapphire Substrate, need not take out from current-diffusion layer, and owing to not getting light from current-diffusion layer, lighttight current-diffusion layer can thicken, and adds the current density of chip; Meanwhile, this structure can also by the heat of PN junction directly by metal salient point conduct to the high Si substrate of thermal conductivity and CuW heat sink, the application of hot pipe technique further improves radiating effect; Silver reflector layer eliminates being in the light of electrode and lead-in wire, and therefore this structure has the characteristic of the aspect optimums such as electricity, light, heat.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, and form a application's part, schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the general structure block diagram of integrated encapsulation structure of the present invention.
Number in the figure illustrates: 1, dispel the heat heat pipe, 2, CuW is heat sink, 3, Si substrate, 4, gold thread, 5, metal salient point, 6, LED chip, 7, silver-colored reflector layer, 8, sapphire.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the present invention in detail.
With reference to shown in Fig. 1, a kind of power-type LED integrated encapsulation structure, comprise heat sink 2, the Si substrates 3 of heat radiation heat pipe 1, CuW, LED chip 6 and sapphire 8, described heat radiation heat pipe 1 is arranged on the lowermost end of described structure, and the top of described heat radiation heat pipe 1 is provided with described CuW heat sink 2, and described CuW is heat sink is provided with described Si substrate 3 above 2, be provided with described LED chip 6 above described Si substrate 3, the top of described LED chip 6 is provided with described sapphire 8.
Further, described LED chip 6 comprises P electrode and N electrode, the below of described P electrode and N electrode is respectively arranged with a metal salient point 5, and described Si substrate 3 is connected by gold thread 4 with the outside of described LED chip 6, is provided with the anti-layer 7 of silver-colored light between described P electrode and PN junction.
Operation principle of the present invention:
In such an embodiment, light takes out from sapphire 8 substrate, need not take out from current-diffusion layer, and owing to not getting light from current-diffusion layer, lighttight current-diffusion layer can thicken, and adds the current density of LED chip 6.Meanwhile, the heat of PN junction can also directly be conducted to the high Si substrate 3 of thermal conductivity and CuW heat sink 2 by metal salient point 5 by this structure, and the application of hot pipe technique further improves radiating effect.And the silver-colored reflector layer 7 between PN junction and P electrode, turn eliminate being in the light of electrode and lead-in wire, therefore this structure has the characteristic of the aspect optimums such as electricity, light, heat.
Encapsulating structure adopts flip chip technology (fct), and luminescent layer (light emitting source) distance packaged side is comparatively near, therefore, easily the heat of LED chip 6 is dispersed into package-side.In addition, adopt flip-chip installation method that LED chip 6 is installed, when the light injection of its luminescent layer is outside, covering of electrode can not be subject to.Especially adopt the LED of sapphire base plate etc. only to arrange the product of electrode in LED chip one side, its effect is more obvious.The luminous efficiency of the LED installed by flip-chip, compared with adopting the installation of wire bonding, can improve 10%.
Encapsulating structure selects silicon chip as the substrate of gallium nitride material, and it has many advantages, and as crystal mass is high, size is large, and cost is low, easily processes, good conductivity, thermal conductivity and stability etc.The chip electrode of silicon substrate adopts perpendicular contact mode, makes electric current can longitudinal flow, therefore considerably increases LED light-emitting area, thus improves the light extraction efficiency of LED.Because silicon is the good conductor of heat, so the thermal conductivity of device can obviously be improved, thus extend the life-span of device.
Select heat pipe heat radiation as the radiating mode of integrated encapsulation structure, distribute with the quick heat that chip is conducted out.Heat pipe heat radiation not only structure is simple, and its heat conductivility is also more outstanding than copper rod, has " superconductor " good reputation.Typical heat pipe is made up of shell and liquid-sucking core, and in heat pipe, working media produces phase transformation steam, to manage interior pressure reduction for kinetic current is to condensation segment in evaporation section heat absorption, exothermic condensation becomes liquid, be adsorbed in liquid-sucking core, be back to evaporation section with the capillary force in liquid-sucking core for power, realize circulation cooling.Relative to other radiating mode, hot pipe technique has without extra power demand, technology maturation, heat dispersion high.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. a power-type LED integrated encapsulation structure, comprise heat radiation heat pipe (1), CuW is heat sink (2), Si substrate (3), LED chip (6) and sapphire (8), it is characterized in that, described heat radiation heat pipe (1) is arranged on the lowermost end of described structure, the top of described heat radiation heat pipe (1) is provided with described CuW heat sink (2), described CuW is heat sink (2), and top is provided with described Si substrate (3), described Si substrate (3) top is provided with described LED chip (6), the top of described LED chip (6) is provided with described sapphire (8).
2. power-type LED integrated encapsulation structure according to claim 1, it is characterized in that, described LED chip (6) comprises P electrode and N electrode, the below of described P electrode and N electrode is respectively arranged with a metal salient point (5), and described Si substrate (3) is connected by gold thread (4) with the outside of described LED chip (6), is provided with the anti-layer of silver-colored light (7) between described P electrode and PN junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410796210.6A CN104465975A (en) | 2014-12-18 | 2014-12-18 | Power-type LED integrated packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410796210.6A CN104465975A (en) | 2014-12-18 | 2014-12-18 | Power-type LED integrated packaging structure |
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| CN104465975A true CN104465975A (en) | 2015-03-25 |
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| CN201410796210.6A Pending CN104465975A (en) | 2014-12-18 | 2014-12-18 | Power-type LED integrated packaging structure |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060192222A1 (en) * | 2004-12-08 | 2006-08-31 | Jyh-Chen Chen | Light emitting device |
| CN1971952A (en) * | 2006-11-15 | 2007-05-30 | 重庆邮电大学 | Converse welding method of high power LED chip |
| CN101043809A (en) * | 2006-03-23 | 2007-09-26 | 创新陶瓷工程技术公司 | Carrier body for components or circuits |
| US20090236729A1 (en) * | 2006-11-15 | 2009-09-24 | Industrial Technology Research Institute | Melting temperature adjustable metal thermal interface materials and packaged semiconductors including thereof |
| CN101673802A (en) * | 2009-09-27 | 2010-03-17 | 上海大学 | Integrated metal matrix aluminium nitride film substrate, high-power LED module of heat pipe and manufacturing method thereof |
| CN201570516U (en) * | 2009-11-30 | 2010-09-01 | 杜姬芳 | LED packaging structure |
| CN103078040A (en) * | 2011-08-22 | 2013-05-01 | Lg伊诺特有限公司 | Light emitting device package and light unit |
-
2014
- 2014-12-18 CN CN201410796210.6A patent/CN104465975A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060192222A1 (en) * | 2004-12-08 | 2006-08-31 | Jyh-Chen Chen | Light emitting device |
| CN101043809A (en) * | 2006-03-23 | 2007-09-26 | 创新陶瓷工程技术公司 | Carrier body for components or circuits |
| CN1971952A (en) * | 2006-11-15 | 2007-05-30 | 重庆邮电大学 | Converse welding method of high power LED chip |
| US20090236729A1 (en) * | 2006-11-15 | 2009-09-24 | Industrial Technology Research Institute | Melting temperature adjustable metal thermal interface materials and packaged semiconductors including thereof |
| CN101673802A (en) * | 2009-09-27 | 2010-03-17 | 上海大学 | Integrated metal matrix aluminium nitride film substrate, high-power LED module of heat pipe and manufacturing method thereof |
| CN201570516U (en) * | 2009-11-30 | 2010-09-01 | 杜姬芳 | LED packaging structure |
| CN103078040A (en) * | 2011-08-22 | 2013-05-01 | Lg伊诺特有限公司 | Light emitting device package and light unit |
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Application publication date: 20150325 |
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