CN1234614A - Method for enhancing responsivity of pyroelectric infrared detector - Google Patents
Method for enhancing responsivity of pyroelectric infrared detector Download PDFInfo
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- CN1234614A CN1234614A CN 98122069 CN98122069A CN1234614A CN 1234614 A CN1234614 A CN 1234614A CN 98122069 CN98122069 CN 98122069 CN 98122069 A CN98122069 A CN 98122069A CN 1234614 A CN1234614 A CN 1234614A
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Abstract
The present invention relates to a method using ion implantation technique to raise pyroelectric response of infrared detector. Said method includes the following steps: using He ion implantation and heat treatment to produce a cavity layer in silicone substrate under the infrared detector, reducing diffusion of heat quantity absorbed by pyroelectric material to silicone substrate to raise the responsivity of pyroelectric infrared detector. Atthe same time, it adopts the pulse laser deposition technique to deposit subcrystal layer matched with ferroelectric film lattice on the Pt/Ti/SiO2/Si substrate with cavity layer, and adopts metal organic thermolysis method to prepare ferroelectric film with high pyroelectric coefficient. Said invention is simple in process, good in uniformly and reproducibility, and compatible with conventional integrated circuit technology.
Description
The present invention is the new method that improves the Infrared Detectors pyroelectric response with ion implantation technique, belongs to the integrated ferroelectric manufacturing process.
Make pyroelectric infrared detector with ferroelectric thin film and have the refrigeration of need not, can at room temperature work, spectral response does not have characteristics such as the cheap and device architecture of wavelength discretionary costs is simple.For with the ic process compatibility of routine, generally when ferroelectric thin film prepares select silicon substrate, but the thermal conductivity of silicon materials very high (145W/m.K).Can greatly reduce the pyroelectric response of detector and the sensitivity of reaction thereof as the heat that ferroelectric thin film absorbs of surveying unit to the dissipation of silicon substrate.Pyroelectric detector reduces hot-fluid and mainly contains from the method that film adopts at present to the transmission of substrate: bridge-type hanging structure, air-gap structure, micro-bridge structure and porous SiO
2Hanging structure has utilized silicon directional etching characteristic, digs window in the behind of surveying unit, stops the hot-fluid diffusion by air.Its disadvantage is bad mechanical strength (T.Shiosaki, Proceeding of the 6thUS-Japan Seminar on Dielectric and Piezoelectric Ceramics, USA, 1993:1-8.and M.Okuyama, and Y.Hamakawa, Ferroelectrics, 63 (1985), 243-252.).Air-gap structure is by silicon nitride or phosphorosilicate glass under the corrosion detective unit hearth electrode, forms the thick air gap of 1000～2000nm and stop hot-fluid between silicon substrate and hearth electrode.Shortcoming is etching or the photoetching that needs through repeatedly, and the silicon corrosion is lateral encroaching (Pham L., TihenW., Ye C.et al, IEEE tranastions on ultrasonics ferroelectrics andfrequency control, 41 (1994), 552-555.).Micro-bridge structure has utilized microelectromechanical systems processing (MEMS) technology, prepares silicon nitride film " microbridge " on silicon chip.Have only two points to contact between microbridge and the silicon chip, the preparation ferroelectric thin film forms device on microbridge.Its shortcoming is a complex process, and difficulty is big.People such as Ren Wei (Wei Ren, Yun Liu, Xiaoqing Wu, Liangying Zhangand Yao Xi, Integrated ferroelectrics, 15 (1997), 271-279.) adopt porous SiO
2Improve the pyroelectric response of ferroelectric thin film as heat insulation layer, but adopt the Sol-Gel legal system to be equipped with porous SiO
2, complex process, repeatability and less stable.
The objective of the invention is to adopt simple method, in body silicon, form the cavity layer that one deck stops the hot-fluid diffusion, make the ferroelectric thin film of the texture of preparation on silicon substrate have very high pyroelectric response, material is used for the infrared thermal release electric detector of integrated ferroelectric device.
A kind of method that improves responsivity of pyroelectric infrared detector is: monocrystalline silicon buffing sheet, the about 350000nm of thickness, after conventional integrated circuit technology is cleaned, utilize conventional ion implanter or plasma immersion formula implanter, be that 20-170keV, dosage are (1-9) * 10 with energy
17/ cm
2The He ion be injected into below the silicon top layer, under nitrogen protection in 700-1100 ℃ annealing 1-2 hour.Under 1000-1100 ℃ with surface silicon and nano-pore layer wet-oxygen oxidation, the SiO of generation
2Layer and SiO
2The thickness of cavity layer is about 300-600nm and 500-1000nm respectively; Adopt high vacuum evaporation to prepare Pt, / Ti hearth electrode, adopt the PLD legal system to be equipped with the strontium barium niobate subcrystal layer (SBN) of 10-100nm, by 650-750 ℃ of insulation annealing in 1-2 hour, form the film of (001) orientation texture, adopting the MOD method to prepare thickness subsequently is that the lead titanates of 500～1000nm texture is mixed lanthanum (PLT) film, and wherein heat treatment temperature is 700-800 ℃ of insulation 1-3 hour.
Fig. 1 is a structure chart: 1 is silicon substrate, and thickness is 300～5000nm; 102 is the cavity heat insulation layer, and thickness is at 500～1000nm; 103 is SiO
2Layer, thickness is 300nm; 4 is the Ti transition zone, and thickness is 20nm; 5 is the Pt hearth electrode, and thickness is 60-100nm; 6 is the SBN subcrystal layer, and thickness is 10～100nm; 7 is the PLT ferroelectric thin film layer, and thickness is 500～1000nm; 8 is top electrode, and thickness is 60-100nm; 104 is the window of hanging structure.
Fig. 2 is a process chart: one, with cleaning fluid the silicon chip after cleaning 1 is annotated He
+Two, heat treatment and thermal oxidation form cavity layer 102 and SiO on silicon chip 1
2 Layer 103; Three, utilize superelevation electron beam evaporation instrument at SiO
2Ti4 grows on the layer 103; Four, utilize the superelevation electron beam evaporation instrument Pt5 that on Ti4, grows; Seven, adopt pulsed laser deposition to prepare SBN5; Eight, adopt the organic thermal decomposition method of metal to prepare PLT7; Nine, adopt corroding method to form unsettled window 104; Ten, adopt superelevation electron beam evaporation instrument to form top electrode 8.
Adopt the inventive method, be infused in the cavity layer that forms in the silicon substrate, prevented that hot-fluid from flowing to silicon chip from electric heating film on the one hand, improved the pyroelectric response of ferroelectric thin film by ion; Guaranteed on the other hand preparation technology fully with the compatibility of silicon integrated technique, with the comparison of front several method, mechanical strength has improved, the simple and technological parameter of technical process is controlled repeatability and good stability easily.
Pt/Ti/SiO at cavity layer that the present invention forms
2Adopt pulsed laser deposition (PLD) to prepare strontium barium niobate (SBN) subcrystal layer of texture on the/Si substrate, the lead titanates that adopts the organic thermal decomposition method of metal (MOD) to prepare texture is again mixed lanthanum (PLT) film, and surface roughness can be controlled in below the 3nm.The PLT ferroelectric thin film has good pyroelectric property, and (pyroelectric coefficient can reach 6.5 * 10
-8C/cm
2K), dielectric constant is moderate, and the very high voltage figure of merit is arranged.
Following implementation method will help to understand the present invention, but not limit content of the present invention.
Below be a kind of implementation method:
Monocrystalline silicon buffing sheet, the about 350000nm of thickness after conventional integrated circuit technology is cleaned, utilizes conventional ion implanter or plasma immersion formula implanter, is that 70-160keV, dosage are 8 * 10 with energy
17/ cm
2The He ion be injected into below the silicon top layer, under nitrogen protection in 700 ℃ annealing 1 hour.With conventional thermal oxidation method with surface silicon and the oxidation of nano-pore layer, the SiO of generation
2Layer and SiO
2The thickness of cavity layer is about 300nm and 800nm respectively; Adopt high vacuum evaporation to prepare the Pt/Ti hearth electrode, adopt the PLD legal system to be equipped with the strontium barium niobate subcrystal layer of 100nm, by 650 ℃ of insulations annealing in 1 hour, form the film of (001) orientation texture, adopt the MOD method to prepare the PLT film that thickness is 800nm texture subsequently, wherein heat treatment temperature is 700 ℃ of insulations 1 hour.
The silicon-based ferroelectric membrane structure that makes with said method as shown in Figure 1, wherein: 1 is silicon substrate, and thickness is 350nm; 102 is the cavity heat insulation layer, and thickness is at 800nm; 103 is SiO
2Layer, thickness is 300nm; 4 is the Ti transition zone, and thickness is 20nm; 5 is the Pt hearth electrode, and thickness is 80nm; 6 is the SBN subcrystal layer, and thickness is 30nm; 7 is the PLT ferroelectric thin film layer, and thickness is 800nm; 8 is top electrode, and thickness is 80nm; 104 is the window of hanging structure.
Process chart such as Fig. 2: one, the silicon chip after cleaning 1 is annotated He with cleaning fluid
+Two, heat treatment and thermal oxidation form cavity layer 102 and SiO on silicon chip 1
2The layer 103 3, utilize superelevation electron beam evaporation instrument at SiO
2Ti4 grows on the layer 103; Four, utilize the superelevation electron beam evaporation instrument Pt5 that on Ti4, grows; Seven, adopt pulsed laser deposition to prepare SBN5; Eight, adopt the organic thermal decomposition method of metal to prepare PLT7; Nine, adopt corroding method to form unsettled window 104; Ten, adopt superelevation electron beam evaporation instrument to form top electrode 8.
Effect of the present invention is:
1, adopt the method for He Implantation, heat treatment and thermal oxide in silicon substrate, to form SiO2Cavity layer can effectively stop and survey unit's heat Flow to the diffusion of substrate, improve the response of pyroelectric detector; In conjunction with Unsettled window, better effects if, solution hanging structure bad mechanical strength Problem.
2, it is brilliant at first to adopt the PLD method to generate son, utilizes then the MOD legal system standby Go out large tracts of land, uniformly and the PLT ferroelectric thin film of texture, can effectively carry The pyroelectric coefficient of high film is used for making infrared detector array.
3, whole preparation technology is simple, repeatability and good stability, and with Conventional integrated circuit compatibility.
Claims (6)
1, a kind of method that improves responsivity of pyroelectric infrared detector in the Si substrate that the making Infrared Detectors is used, adopts the injection of He ion, high-temperature heat treatment and thermal oxidation, forms SiO
2Layer and SiO
2Cavity layer.Formation condition is for adopting conventional ion implantor, and the energy that its He ion injects is 20-170keV, and dosage is (1-9) * 10
17/ cm
2, heat treatment temperature is 700-1100 ℃, and insulation is 1-2 hour under nitrogen protection, and thermal oxidation is at 1000-1100 ℃ of following wet-oxygen oxidation, then, adopts pulse laser at the above-mentioned Pt/Ti/SiO that cavity layer is arranged
2Deposit subcrystal layer on the/Si substrate, laser energy is controlled at 140-160mJ during deposition, and underlayer temperature is controlled at 650-750 ℃, adopts metallo-organic decomposition process again, prepares the ferroelectric thin film that thickness is texture.
2, in accordance with the method for claim 1, the thickness that it is characterized in that described cavity layer is at 500-1000nm, and the porosity in the cavity layer is at 10-40%, and the aperture is at 10-50nm.
3, according to claim 1 or 2 described methods, the thickness that it is characterized in that the ferroelectric thin film of described texture is 500-1000nm.
4, according to claim 1 or 2 described methods, it is characterized in that utilizing the pulsed laser deposition subcrystal layer, sedimentation time was controlled at 4-10 minute, just can obtain the subcrystal layer of strontium barium niobate texture.
5, in accordance with the method for claim 4, the subcrystal layer thickness that it is characterized in that described strontium barium niobate texture is 10-100nm.
6, according to right 1 described method, the final heat treatment temperature of PLT ferroelectric thin film of metallo-organic decomposition process preparation should be 700～800 ℃.
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| CN 98122069 CN1111912C (en) | 1998-12-04 | 1998-12-04 | Method for enhancing responsivity of pyroelectric infrared detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465850A (en) * | 2014-11-28 | 2015-03-25 | 电子科技大学 | Pyroelectric infrared detector based on graphene absorbing layer and manufacturing method of pyroelectric infrared detector based on graphene absorbing layer |
| CN111864046A (en) * | 2020-06-29 | 2020-10-30 | 中国科学院上海微***与信息技术研究所 | Preparation method of pyroelectric infrared detector and pyroelectric infrared detector |
-
1998
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465850A (en) * | 2014-11-28 | 2015-03-25 | 电子科技大学 | Pyroelectric infrared detector based on graphene absorbing layer and manufacturing method of pyroelectric infrared detector based on graphene absorbing layer |
| CN104465850B (en) * | 2014-11-28 | 2016-09-21 | 电子科技大学 | Pyroelectric infrared detector based on Graphene absorbed layer and manufacture method thereof |
| CN111864046A (en) * | 2020-06-29 | 2020-10-30 | 中国科学院上海微***与信息技术研究所 | Preparation method of pyroelectric infrared detector and pyroelectric infrared detector |
| CN111864046B (en) * | 2020-06-29 | 2021-10-19 | 中国科学院上海微***与信息技术研究所 | Preparation method of pyroelectric infrared detector and pyroelectric infrared detector |
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