CN202956191U - Absorbed layer with flat spectrum for detector - Google Patents
Absorbed layer with flat spectrum for detector Download PDFInfo
- Publication number
- CN202956191U CN202956191U CN 201220571747 CN201220571747U CN202956191U CN 202956191 U CN202956191 U CN 202956191U CN 201220571747 CN201220571747 CN 201220571747 CN 201220571747 U CN201220571747 U CN 201220571747U CN 202956191 U CN202956191 U CN 202956191U
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- China
- Prior art keywords
- pmnt
- layer
- face
- wafer
- metal layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001228 spectrum Methods 0.000 title claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims abstract description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 16
- 239000011651 chromium Substances 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 6
- 238000000059 patterning Methods 0.000 abstract description 13
- 238000001659 ion-beam spectroscopy Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical group [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229920000334 poly[3-(3'-N,N,N-triethylamino-1-propyloxy)-4-methylthiophene-2,5-diyl hydrochloride] polymer Polymers 0.000 description 45
- 239000010408 film Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 15
- 239000003292 glue Substances 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 5
- 230000002745 absorbent Effects 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 229910020231 Pb(Mg1/3Nb2/3)O3-xPbTiO3 Inorganic materials 0.000 description 3
- 229910020226 Pb(Mg1/3Nb2/3)O3−xPbTiO3 Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005616 pyroelectricity Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
Abstract
The utility model discloses an absorbed layer with flat spectrum for a detector, composed of a first metal layer, a second metal layer and a third metal layer from top to bottom. The absorbed layer is characterized in that the first metal layer is a chromium-nickel alloy layer in square resistance of 9.5 omega to 10 omega; the second metal layer is made of metallic nickel in the film thickness of 75nm to 85nm; and the third metal layer is made of metallic chromium in the film thickness of 18nm to 22nm. The absorbed layer with flat and wide spectrum is prepared by lithographing-patterning, heat evaporation and ion beam sputtering, wherein technology of the absorbed layer is simple, and the absorbed layer is compatible with semiconductor technology, benefits for integration of technologies, and is suitable for unit, line and surface-array detectors. The absorbed layer has the advantages of firm adhesion, good repeatability, wide absorbing wave band, flat spectrum, high absorption rate, low specific heat capacity and excellent heat transferring performance, can be also used as an electrode, and is suitable for the infrared detector.
Description
Technical field:
This patent relates to optical thin film element, is specifically related to the detector absorption layer that a kind of spectrum is smooth.
Background technology:
Non-refrigeration thermosensitive type detector has the plurality of advantages such as working and room temperature does not need refrigeration system, compact conformation, reliability is high, spectral response is wide and spectrum is smooth, technique is simple, cheap, can be widely used in the fields such as national defence, industry, medical science and scientific research, such as can be used for all many-sides such as intrusion alarm, security monitoring, fireproof alarming, non-contact temperature measuring, commercial production monitoring, infrared imaging, the auxiliary driving of aircraft vehicle amount, medical diagnosis, spectral analysis.When infrared radiation incides on the thermosensitive type non-refrigerated infrared detector, infrared radiation is detected device and absorbs and cause that detector temperature changes, the in most cases variation of temperature can cause that the detector electrical parameter changes (such as resistance value, spontaneous polarization strength etc.), thereby realizes the detection to infrared radiation.The absorption characteristic of the absorption layer of non-refrigerated infrared detector to infrared radiation, not only directly affect explorer response rate and detectivity, also determined the spectral response characteristic of detector.At present the absorption layer of non-refrigerated infrared detector exists and adheres to insecure or absorption bands is narrow and standard semiconductor technique is incompatible, is difficult to use in the shortcomings such as alignment and planar array detector.
Summary of the invention:
The purpose of this patent is that a kind of spectrum of proposition is smooth, the broadband absorbent layer structure.Solution non-refrigerated infrared detector infrared absorption layer adheres to insecure or absorption bands is narrow and standard semiconductor technique is incompatible, is difficult to use in the problem of alignment and planar array detector.
This patent discloses absorbent layer structure and the manufacturing process thereof that a kind of spectrum is smooth, it is comprised of chrome-nickel alloy layer 1, thin nickel metal film 2 and chromium metallic film 3, it is characterized in that: absorption layer sequentially is followed successively by chrome-nickel alloy layer 1, thin nickel metal film 2 and chromium metallic film 3 by the incident of incident radiation, wherein:
Described chrome-nickel alloy layer 1 is the chrome-nickel alloy layer that square resistance is 9.5 Ω/-10.0 Ω/;
The metallic nickel that described thin nickel metal film 2 is 75nm-85nm for thickness;
Described chromium metallic film 3 is crome metals that thickness is 18nm-22nm.
The absorbent layer structure that the spectrum that this patent provides is smooth is realized by following concrete processing step:
1) absorption layer that spectrum is smooth is produced on the Mn-PMNT wafer.Two surfaces of Mn-PMNT are labeled as respectively A face and B face.Mn-PMNT wafer A face is carried out to the smooth and polishing of mechanical reduction.
2) clean the Mn-PMNT wafer, at A face photolithography patterning.
3) adopt the technique deposit chromium metallic film of ion beam sputtering at Mn-PMNT wafer A face, thickness is 18nm-22nm and chromium metallic film, and thickness is 75nm-85nm.Floating glue cleans.
4) at Mn-PMNT wafer A face photolithography patterning.
5) adopt the technique deposit chrome-nickel alloy layer of thermal evaporation at Mn-PMNT wafer A face, chrome-nickel alloy absorption layer square resistance is 9.5 Ω/-10.0 Ω/.Floating glue cleans.
6), at Mn-PMNT wafer A face photolithography patterning, form etching mask.
7) at Mn-PMNT wafer A face, adopt the technique of argon ion etching to etch shape and structure and the size of electrode.Floating glue cleans.
The advantage of this patent is: absorption layer has the advantages such as adhesion-tight, reproducible, absorption bands is wide and smooth, absorptivity is high, specific heat capacity is little, heat transfer property is good, and absorption layer can doublely be done electrode simultaneously, is suitable as the absorption layer of thermal infrared detector.
The accompanying drawing explanation:
Fig. 1 is absorbent layer structure figure, 1. chrome-nickel alloy layer 2. thin nickel metal film 3. chromium metallic film in figure.
Embodiment:
Below in conjunction with accompanying drawing, by instantiation, this patent is described in further details, but the protection domain of this patent is not limited to following example.
Example one
Based on Mn-(1-x) Pb (Mg
1/3Nb
2/3) O
3-xPbTiO
3(Mn-PMNT) in 128 * 1 pyroelectricity detector array of material, the smooth wide spectral absorption structural design that has adopted this patent to provide.Specifically by following steps, realize.
(1) Mn-PMNT surface treatment
1) the Mn-PMNT wafer of cleaning<111 > direction polarization.Two surfaces of Mn-PMNT are labeled as respectively A face and B face.Mn-PMNT wafer A face is carried out to the smooth and polishing of mechanical reduction.Wet etching Mn-PMNT wafer A face is to remove defect and damage.
(2) deposit infrared absorption layer etching form electrode structure
2) clean the Mn-PMNT wafer, at A face photolithography patterning.
3) adopt technique deposit chromium metallic film and the thin nickel metal film of ion beam sputtering at Mn-PMNT wafer A face.Floating glue cleans.Chromium thickness of metal film 18nm wherein, nickel metal film thickness 75nm.
4) at Mn-PMNT wafer A face photolithography patterning.
5) adopt the technique deposit chrome-nickel alloy absorption layer of thermal evaporation at Mn-PMNT wafer A face, chrome-nickel alloy absorption layer square resistance is 9.5 Ω/.Floating glue cleans.
6), at Mn-PMNT wafer surface photolithography patterning, form etching mask.
7) at Mn-PMNT wafer A face, adopt the technique of argon ion etching to etch structure and the size of electrode.Floating glue cleans.
Example two
Based on Mn-(1-x) Pb (Mg
1/3Nb
2/3) O
3-xPbTiO
3(Mn-PMNT) in 128 * 1 pyroelectricity detector array of material, the smooth wide spectral absorption structural design that has adopted this patent to provide.Specifically by following steps, realize.
(1) Mn-PMNT surface treatment
1) the Mn-PMNT wafer of cleaning<111 > direction polarization.Two surfaces of Mn-PMNT are labeled as respectively A face and B face.Mn-PMNT wafer A face is carried out to the smooth and polishing of mechanical reduction.Wet etching Mn-PMNT wafer A face is to remove defect and damage.
(2) deposit infrared absorption layer etching form electrode structure
2) clean the Mn-PMNT wafer, at A face photolithography patterning.
3) adopt technique deposit chromium metallic film and the thin nickel metal film of ion beam sputtering at Mn-PMNT wafer A face.Floating glue cleans.Chromium thickness of metal film 20nm wherein, nickel metal film thickness 80nm.
4) at Mn-PMNT wafer A face photolithography patterning.
5) adopt the technique deposit chrome-nickel alloy absorption layer of thermal evaporation at Mn-PMNT wafer A face, chrome-nickel alloy absorption layer square resistance is 9.8 Ω/.Floating glue cleans.
6), at Mn-PMNT wafer surface photolithography patterning, form etching mask.
7) at Mn-PMNT wafer A face, adopt the technique of argon ion etching to etch structure and the size of electrode.Floating glue cleans.
Example three
Based on Mn-(1-x) Pb (Mg
1/3Nb
2/3) O
3-xPbTiO
3(Mn-PMNT) in 128 * 1 pyroelectricity detector array of material, the smooth wide spectral absorption structural design that has adopted this patent to provide.Specifically by following steps, realize.
(1) Mn-PMNT surface treatment
1) the Mn-PMNT wafer of cleaning<111 > direction polarization.Two surfaces of Mn-PMNT are labeled as respectively A face and B face.Mn-PMNT wafer A face is carried out to the smooth and polishing of mechanical reduction.Wet etching Mn-PMNT wafer A face is to remove defect and damage.
(2) deposit infrared absorption layer etching form electrode structure
2) clean the Mn-PMNT wafer, at A face photolithography patterning.
3) adopt technique deposit chromium metallic film and the thin nickel metal film of ion beam sputtering at Mn-PMNT wafer A face.Floating glue cleans.Chromium thickness of metal film 22nm wherein, nickel metal film thickness 85nm.
4) at Mn-PMNT wafer A face photolithography patterning.
5) adopt the technique deposit chrome-nickel alloy absorption layer of thermal evaporation at Mn-PMNT wafer A face, chrome-nickel alloy absorption layer square resistance is 10.0 Ω/.Floating glue cleans.
6), at Mn-PMNT wafer surface photolithography patterning, form etching mask.At Mn-PMNT wafer A face, adopt the technique of argon ion etching to etch structure and the size of electrode.Floating glue cleans.
Claims (1)
1. the detector absorption layer that spectrum is smooth, it is comprised of chrome-nickel alloy layer (1), thin nickel metal film (2) and chromium metallic film (3), it is characterized in that: absorption layer sequentially is followed successively by chrome-nickel alloy layer (1), thin nickel metal film (2) and chromium metallic film (3) by the incident of incident radiation, wherein:
Described chrome-nickel alloy layer (1) is the chrome-nickel alloy layer that square resistance is 9.5 Ω/-10.0 Ω/;
The metallic nickel that described thin nickel metal film (2) is 75nm-85nm for thickness;
Described chromium metallic film (3) is the crome metal that thickness is 18nm-22nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220571747 CN202956191U (en) | 2012-11-01 | 2012-11-01 | Absorbed layer with flat spectrum for detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220571747 CN202956191U (en) | 2012-11-01 | 2012-11-01 | Absorbed layer with flat spectrum for detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202956191U true CN202956191U (en) | 2013-05-29 |
Family
ID=48461758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220571747 Expired - Lifetime CN202956191U (en) | 2012-11-01 | 2012-11-01 | Absorbed layer with flat spectrum for detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202956191U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928087A (en) * | 2012-11-01 | 2013-02-13 | 中国科学院上海技术物理研究所 | Flat spectrum absorption layer for detectors and manufacture method thereof |
| CN104280135A (en) * | 2013-07-05 | 2015-01-14 | 苏州宏见智能传感科技有限公司 | Flexible uncooled infrared detector and manufacturing method thereof |
-
2012
- 2012-11-01 CN CN 201220571747 patent/CN202956191U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928087A (en) * | 2012-11-01 | 2013-02-13 | 中国科学院上海技术物理研究所 | Flat spectrum absorption layer for detectors and manufacture method thereof |
| CN104280135A (en) * | 2013-07-05 | 2015-01-14 | 苏州宏见智能传感科技有限公司 | Flexible uncooled infrared detector and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130529 |