CN104458835A - Humidity sensor and manufacturing method thereof - Google Patents
Humidity sensor and manufacturing method thereof Download PDFInfo
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- CN104458835A CN104458835A CN201410849515.9A CN201410849515A CN104458835A CN 104458835 A CN104458835 A CN 104458835A CN 201410849515 A CN201410849515 A CN 201410849515A CN 104458835 A CN104458835 A CN 104458835A
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- humidity
- interdigital electrode
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Abstract
The invention provides a humidity sensor and a manufacturing method thereof. The humidity sensor comprises a substrate with the insulative surface, humidity sensitive materials and an interdigitated electrode film layer, wherein the humidity sensitive materials and the interdigitated electrode film layer are located on the insulative surface, the humidity sensitive materials are distributed between interdigitated electrodes and are in key connection with the interdigitated electrodes, and the humidity sensitive materials are in the oxidation state of interdigitated electrode materials. The invention further provides the manufacturing method of the humidity sensor, the method comprises the steps of providing the substrate with the insulative surface; forming the layer of oxidation state humidity sensitive materials on the insulative surface; forming interdigitated electrode pattern masks on the surfaces of the humidity sensitive materials; carrying out reduction process on the humidity sensitive materials under the protection of the interdigitated electrode pattern masks, and forming the interdigitated electrodes between the humidity sensitive materials; not reducing the parts, shielded by the interdigitated electrode pattern masks, of the humidity sensitive materials, and reducing the parts, exposed out of the interdigitated electrode pattern masks, of the humidity sensitive materials into the interdigitated electrode materials; removing the interdigitated electrode pattern masks. Therefore, it is favorable for manufacturing the thin graphene oxide humidity sensor and improving the sensitivity of the humidity sensor.
Description
Technical field
The present invention relates to technical field of integrated circuits, be specifically related to a kind of humidity sensor and preparation method thereof.
Background technology
Humidity, typically refers to the content of water vapor in air, and it is used for reflecting the dry wet degree of air.Daily life and industrial and agricultural production, and vegeto-animal growth and existence, all have close relationship with the ambient humidity of surrounding.Moisture measurement needs to adopt humidity sensor, its be can there is the physical influence relevant with humidity or chemical reaction based on functional material basis on manufacture, there is function humidity physical quantity being converted to electric signal.
Humidity sensor can be divided into telescopic, vaporation-type, dew point instrument, electronic type, electromagnetic type etc., wherein based on the investigation and application of electronic type according to the difference of its principle of work.What Recent study was more is capacitive based electronic type humidity sensor, this kind of humidity sensor main operational principle is: the vapour molecule in wet sensitive Absorption of Medium air makes specific inductive capacity change, thus capacitance changes, be converted into the electric signal relevant to humidity through treatment circuit and be read out.At present, the material as conventional wet sensitive media mainly contains porous medium and high molecular polymer, but all need to improve for its precision of high-end applications and response speed.In recent years, along with the fast development of material science, the Unordered system of nano-material, carbon nano-tube material, graphene-based material is found gradually and studies further.For the graphite oxide material in graphene-based material family, its Unordered system will be much better than traditional humidity-sensitive material.Further, research shows, the performance of graphene oxide composite material thickness to humidity sensor has a great impact, and general graphene oxide is thinner, and the characteristics such as the response speed of sensor are better.The structural representation of the humidity sensor based on graphene oxide composite material of the prior art as shown in Figure 1, the structure of the existing humidity sensor based on graphene oxide composite material comprises: substrate 101, the insulation course 102 on substrate 101 surface, the electrode structure 103 in interphase distribution on insulation course 102 surface and be covered between electrode structure 103 and the graphene oxide 104 on surface; Its preparation method comprises: on the insulation course 102 of substrate 101, form electrode structure 103, then deposit requisite oxygen functionalized graphene 104, and graphene oxide 104 is filled between electrode structure 103 and is covered in above electrode.Because technique limit, use the graphene oxide thickness of this structure and manufacture method to be difficult to do very thin, as nanometer scale, finally make humidity sensor performance have a greatly reduced quality.
Summary of the invention
In order to overcome above problem, the object of the present invention is to provide a kind of humidity sensor and manufacture method thereof, to solve in prior art the problem being difficult to prepare thinner graphene oxide humidity sensor, improving the performance of humidity sensor.
To achieve these goals, the invention provides a kind of humidity sensor, comprising:
Substrate, the surface insulation of described substrate;
Humidity-sensitive material and interdigital electrode thin layer, it is positioned at described insulating surface, and described humidity-sensitive material is distributed between described interdigital electrode, and with described interdigital electrode phase binding; Wherein said humidity-sensitive material is the oxidation state of described interdigital electrode material.
Preferably, described humidity-sensitive material is graphene oxide, and described interdigital electrode is the graphene oxide of Graphene or reduction.
Preferably, the thickness of described humidity-sensitive material and interdigital electrode thin layer is 1-100nm.
Preferably, described substrate is dielectric substrate or is the surperficial Semiconductor substrate with insulation course.
To achieve these goals, present invention also offers a kind of preparation method of humidity sensor, it comprises the following steps:
Step 01: the substrate that a surface insulation is provided;
Step 02: form one deck oxidation state humidity-sensitive material at described insulating surface;
Step 03: form interdigital electrode patterned mask on described humidity-sensitive material surface;
Step 04: under the protection of interdigital electrode patterned mask, carries out reducing process to described humidity-sensitive material, between described humidity-sensitive material, form interdigital electrode; Wherein, the described humidity-sensitive material part that described interdigital electrode patterned mask shelters from is not reduced, and the described humidity-sensitive material part that described interdigital electrode patterned mask exposes is reduced into interdigital electrode material;
Step 05: remove described interdigital electrode patterned mask.
Preferably, described substrate is dielectric substrate or is the surperficial Semiconductor substrate with insulation course.
Preferably, described oxidation state humidity-sensitive material is graphene oxide.
Preferably, in described step 02, described graphene oxide is spin-coated on described insulating surface, then carries out drying process.
Preferably, in described step 04, the described graphene oxide of part changes the graphene oxide of Graphene or reduction into, thus forms described interdigital electrode.
Preferably, direct reducer reducing process, Microwave-assisted Reduction method or ultraviolet irradiation reducing process is adopted to change described for part graphene oxide the graphene oxide of Graphene or reduction into.
Humidity sensor of the present invention and manufacture method thereof, by first forming the humidity-sensitive material of graphene oxide film as humidity sensor on substrate, then partial oxidation Graphene is reduced into the graphene oxide of Graphene or reduction, thus form the interdigital electrode of humidity sensor, the consistency of thickness of humidity-sensitive material and interdigital electrode in the humidity sensor formed, in conjunction with closely, improve humidity sensor sensitivity; And due to graphene oxide film can do very thin, thus be conducive to preparing thinner graphene oxide humidity sensor, and improve humidity sensor sensitivity further.
Accompanying drawing explanation
Fig. 1 is humidity sensor structural profile schematic diagram in prior art
Fig. 2 is the humidity-sensitive material of the humidity sensor of a preferred embodiment of the present invention and the plan structure schematic diagram of interdigital electrode thin layer
Fig. 3 is the schematic flow sheet of the preparation method of the humidity sensor of a preferred embodiment of the present invention
Fig. 4 a-4e is the diagrammatic cross-section that the concrete steps of the preparation method of the humidity sensor of a preferred embodiment of the present invention are formed
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
Humidity sensor of the present invention, comprising: the substrate of surface insulation, and be positioned at humidity-sensitive material and the interdigital electrode thin layer of insulating surface, humidity-sensitive material is distributed between interdigital electrode, and with interdigital electrode phase binding; Humidity-sensitive material is the oxidation state of interdigital electrode material.Like this, interdigital electrode materials conductive, and the humidity-sensitive material of oxidation state is non-conductive.Here, the substrate of surface insulation can be that surface has the Semiconductor substrate of insulation course or whole insulated substrate.
Below in conjunction with accompanying drawing 2-4e and specific embodiment, humidity sensor of the present invention and manufacture method thereof are described in further detail.It should be noted that, accompanying drawing all adopt simplify very much form, use non-ratio accurately, and only in order to object that is convenient, that clearly reach aid illustration the present embodiment.
The humidity sensor of the present embodiment comprises: surface has the Semiconductor substrate of insulation course, be positioned at the graphene oxide humidity-sensitive material of surface of insulating layer and Graphene or reduced graphene interdigital electrode thin layer, refer to Fig. 2, for the humidity-sensitive material of the humidity sensor of a preferred embodiment of the present invention and the plan structure schematic diagram of interdigital electrode thin layer, graphene oxide 1 is distributed between reduced graphene or Graphene interdigital electrode 2, by carbon-carbon bond phase binding.Here, the thickness of graphene oxide and Graphene or reduced graphene is 1-100nm.Substrate or can be the surperficial Semiconductor substrate with insulation course for dielectric substrate.
Refer to Fig. 3, prepare the method for the humidity sensor in the present embodiment, comprise the following steps:
Step 01: refer to Fig. 4 a, provides the substrate of a surface insulation;
Concrete, in the present embodiment, adopt surface to have the substrate 401 of insulation course 402, at substrate 401 surface deposition one layer insulating 402, such as, the silicon dioxide layer of chemical vapor deposition one micron thickness can be adopted.
Step 02: refer to Fig. 4 b, forms one deck oxidation state humidity-sensitive material at insulating surface;
Concrete, graphene oxide dispersion is spin-coated on insulation course 402 surface, then drying and processing, obtains one deck graphene oxide 403 film; The concrete technology parameter of drying and processing can require to set according to actual process, and such as, the temperature of drying and processing can be 60 DEG C, and the time is 30 minutes, and the thickness of graphene oxide 403 film obtained is 10nm.
Step 03: refer to Fig. 4 c, forms interdigital electrode patterned mask on humidity-sensitive material surface;
Concrete, interdigital electrode patterned mask 404 can be etch layer, also can be inorganic hardmasks; In the present embodiment, adopt photoresist as mask.By at the surperficial spin coating photoresist of graphene oxide 403, exposure, development and post bake, obtain the mask 404 with interdigital electrode pattern, the thickness of mask 404 can set according to actual process situation, can be 600nm here.
Step 04: refer to Fig. 4 d, under the protection of interdigital electrode patterned mask, carries out reducing process to humidity-sensitive material, between humidity-sensitive material, forms interdigital electrode;
Concrete, the humidity-sensitive material part that interdigital electrode patterned mask shelters from is not reduced, and the humidity-sensitive material part that interdigital electrode patterned mask exposes is reduced into interdigital electrode material; In the present embodiment, the graphene oxide 404 of expose portion changes the graphene oxide of Graphene or reduction into, thus forms interdigital electrode 405; Direct reducer reducing process, Microwave-assisted Reduction method, ultraviolet irradiation reducing process etc. can be adopted.Finally, the graphene oxide of Graphene or reduction forms interdigital electrode 405, and the graphene oxide be not reduced forms humidity-sensitive material 403 '.Further, because the two belongs to same graphene oxide 404 film, therefore, the thickness of the two is identical.
Step 05: refer to Fig. 4 e, removes interdigital electrode patterned mask.
Concrete, adopt acetone, isopropyl alcohol, deionized water soak respectively and rinse successively, mask 404 is removed completely, complete the preparation of humidity sensor.
In sum, humidity sensor of the present invention and manufacture method thereof, by first forming the humidity-sensitive material of graphene oxide film as humidity sensor on substrate, then partial oxidation Graphene is reduced into the graphene oxide of Graphene or reduction, thus form the interdigital electrode of humidity sensor, the consistency of thickness of humidity-sensitive material and interdigital electrode in the humidity sensor formed, in conjunction with closely, improves humidity sensor sensitivity; And due to graphene oxide film can do very thin, thus be conducive to preparing thinner graphene oxide humidity sensor, and improve humidity sensor sensitivity further.
Although the present invention discloses as above with preferred embodiment; right described embodiment is citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection domain that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a humidity sensor, is characterized in that, comprising:
Substrate, the surface insulation of described substrate;
Humidity-sensitive material and interdigital electrode thin layer, it is positioned at described insulating surface, and described humidity-sensitive material is distributed between described interdigital electrode, and with described interdigital electrode phase binding; Wherein said humidity-sensitive material is the oxidation state of described interdigital electrode material.
2. humidity sensor according to claim 1, is characterized in that, described humidity-sensitive material is graphene oxide, and described interdigital electrode is the graphene oxide of Graphene or reduction.
3. humidity sensor according to claim 1, is characterized in that, the thickness of described humidity-sensitive material and interdigital electrode thin layer is 1-100nm.
4. humidity sensor according to claim 1, is characterized in that, described substrate is dielectric substrate or is the surperficial Semiconductor substrate with insulation course.
5. a preparation method for humidity sensor, is characterized in that, comprises the following steps:
Step 01: the substrate that a surface insulation is provided;
Step 02: form one deck oxidation state humidity-sensitive material at described insulating surface;
Step 03: form interdigital electrode patterned mask on described humidity-sensitive material surface;
Step 04: under the protection of interdigital electrode patterned mask, carries out reducing process to described humidity-sensitive material, between described humidity-sensitive material, form interdigital electrode; Wherein, the described humidity-sensitive material part that described interdigital electrode patterned mask shelters from is not reduced, and the described humidity-sensitive material part that described interdigital electrode patterned mask exposes is reduced into interdigital electrode material;
Step 05: remove described interdigital electrode patterned mask.
6. the preparation method of humidity sensor according to claim 5, is characterized in that, described substrate is dielectric substrate or is the surperficial Semiconductor substrate with insulation course.
7. the preparation method of humidity sensor according to claim 5, is characterized in that, described oxidation state humidity-sensitive material is graphene oxide.
8. the preparation method of humidity sensor according to claim 7, is characterized in that, in described step 02, described graphene oxide is spin-coated on described insulating surface, then carries out drying process.
9. the preparation method of humidity sensor according to claim 7, is characterized in that, in described step 04, the described graphene oxide of part changes the graphene oxide of Graphene or reduction into, thus forms described interdigital electrode.
10. the preparation method of humidity sensor according to claim 9, it is characterized in that, adopt direct reducer reducing process, Microwave-assisted Reduction method or ultraviolet irradiation reducing process to change described for part graphene oxide the graphene oxide of Graphene or reduction into.
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| CN104914138A (en) * | 2015-07-03 | 2015-09-16 | 深圳市共进电子股份有限公司 | Humidity sensor, humidity sensor array and preparation method thereof |
| CN104958073A (en) * | 2015-07-03 | 2015-10-07 | 深圳市共进电子股份有限公司 | Humidity sensor, electronic device and respiration detection system and method |
| CN105241927A (en) * | 2015-09-25 | 2016-01-13 | 上海集成电路研发中心有限公司 | Humidity sensor and preparation method thereof |
| CN106525910A (en) * | 2016-11-30 | 2017-03-22 | 电子科技大学 | Self-energized humidity sensor and preparation method thereof |
| CN107064242A (en) * | 2017-04-11 | 2017-08-18 | 西南交通大学 | Molybdenum disulfide dopen Nano silver particles are combined humidity sensor and preparation method thereof |
| CN107104078A (en) * | 2017-06-06 | 2017-08-29 | 深圳市华星光电技术有限公司 | Graphene electrodes and its patterning preparation method, array base palte |
| CN108287185A (en) * | 2018-01-09 | 2018-07-17 | 南京信息工程大学 | A kind of sounding humidity sensor, preparation method, sounding humidity measurement system and measurement method |
| CN110687169A (en) * | 2019-11-01 | 2020-01-14 | 电子科技大学 | Humidity-sensitive carbon nanotube/graphene/organic composite flexible material, humidity sensor and preparation method thereof |
| CN110793676A (en) * | 2018-08-02 | 2020-02-14 | 北京纳米能源与***研究所 | Temperature and humidity pressure sensor, preparation method thereof and electronic skin |
| CN111879827A (en) * | 2020-06-15 | 2020-11-03 | 上海集成电路研发中心有限公司 | Flexible sensor structure and preparation method thereof |
| CN112683959A (en) * | 2019-10-17 | 2021-04-20 | 北京石墨烯研究院 | Humidity-sensitive composition, flexible humidity sensor and preparation method thereof |
| CN114062447A (en) * | 2021-11-30 | 2022-02-18 | 中国工程物理研究院激光聚变研究中心 | Ultrathin humidity-sensitive sensor applied to low-humidity environment and preparation method thereof |
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Cited By (17)
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| CN104914138A (en) * | 2015-07-03 | 2015-09-16 | 深圳市共进电子股份有限公司 | Humidity sensor, humidity sensor array and preparation method thereof |
| CN104958073A (en) * | 2015-07-03 | 2015-10-07 | 深圳市共进电子股份有限公司 | Humidity sensor, electronic device and respiration detection system and method |
| CN105241927A (en) * | 2015-09-25 | 2016-01-13 | 上海集成电路研发中心有限公司 | Humidity sensor and preparation method thereof |
| CN105241927B (en) * | 2015-09-25 | 2018-02-27 | 上海集成电路研发中心有限公司 | A kind of humidity sensor and preparation method |
| CN106525910A (en) * | 2016-11-30 | 2017-03-22 | 电子科技大学 | Self-energized humidity sensor and preparation method thereof |
| CN107064242A (en) * | 2017-04-11 | 2017-08-18 | 西南交通大学 | Molybdenum disulfide dopen Nano silver particles are combined humidity sensor and preparation method thereof |
| CN107064242B (en) * | 2017-04-11 | 2020-01-17 | 西南交通大学 | Molybdenum disulfide doped nano silver particle composite humidity sensor and preparation method thereof |
| CN107104078A (en) * | 2017-06-06 | 2017-08-29 | 深圳市华星光电技术有限公司 | Graphene electrodes and its patterning preparation method, array base palte |
| CN108287185A (en) * | 2018-01-09 | 2018-07-17 | 南京信息工程大学 | A kind of sounding humidity sensor, preparation method, sounding humidity measurement system and measurement method |
| CN108287185B (en) * | 2018-01-09 | 2024-01-12 | 南京信息工程大学 | Sounding humidity sensor, preparation method, sounding humidity measurement system and sounding humidity measurement method |
| CN110793676A (en) * | 2018-08-02 | 2020-02-14 | 北京纳米能源与***研究所 | Temperature and humidity pressure sensor, preparation method thereof and electronic skin |
| CN112683959A (en) * | 2019-10-17 | 2021-04-20 | 北京石墨烯研究院 | Humidity-sensitive composition, flexible humidity sensor and preparation method thereof |
| CN112683959B (en) * | 2019-10-17 | 2023-08-18 | 北京石墨烯研究院 | Humidity-sensitive composition, flexible humidity sensor and preparation method thereof |
| CN110687169A (en) * | 2019-11-01 | 2020-01-14 | 电子科技大学 | Humidity-sensitive carbon nanotube/graphene/organic composite flexible material, humidity sensor and preparation method thereof |
| CN111879827A (en) * | 2020-06-15 | 2020-11-03 | 上海集成电路研发中心有限公司 | Flexible sensor structure and preparation method thereof |
| CN114062447A (en) * | 2021-11-30 | 2022-02-18 | 中国工程物理研究院激光聚变研究中心 | Ultrathin humidity-sensitive sensor applied to low-humidity environment and preparation method thereof |
| CN114062447B (en) * | 2021-11-30 | 2023-08-18 | 中国工程物理研究院激光聚变研究中心 | Ultrathin humidity-sensitive sensor applied to low-humidity environment and preparation method thereof |
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