CN107907251B - Pressure sensor and preparation method thereof - Google Patents
Pressure sensor and preparation method thereof Download PDFInfo
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- CN107907251B CN107907251B CN201711020901.7A CN201711020901A CN107907251B CN 107907251 B CN107907251 B CN 107907251B CN 201711020901 A CN201711020901 A CN 201711020901A CN 107907251 B CN107907251 B CN 107907251B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
- B32B2255/205—Metallic coating
Abstract
The invention provides a pressure sensor and a preparation method thereof, wherein the pressure sensor comprises a thin film transistor and a sensitive layer arranged on the thin film transistor, the thin film transistor comprises a semiconductor layer and a metal electrode, the metal electrode comprises a grid arranged at the top of the semiconductor layer, the sensitive layer comprises an upper sensitive layer, the lower surface of the upper sensitive layer is provided with a microstructure array, the microstructure array comprises a plurality of microstructures arranged in an array manner, the sensitive layer also comprises a first conductive layer covering the surface of the microstructure array, and the first conductive layer is electrically connected with the grid. The pressure sensor provided by the invention comprises the thin film transistor and the sensitive layer, wherein the sensitive layer comprises the upper sensitive layer with the microstructure array and the first conducting layer covering the surface of the microstructure array, the microstructure array is arranged on the sensitive layer, so that the pressure sensor has high sensitivity and a large measurement range, the structure of the pressure sensor is simple, the preparation process is simplified, and the preparation cost is reduced.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a pressure sensor and a preparation method thereof.
Background
With the rapid development of science and technology, the requirement of human beings on pressure sensors is higher and higher, and the characteristics of high sensitivity, large measurement range, flexibility and the like become the development trend of pressure sensors in the future, wherein, how to make the pressure sensors have the high sensitivity and the large measurement range at the same time becomes the difficult problem of research in the field.
The traditional pressure sensor mainly comprises a piezoresistive type, an inductive type and a capacitive type, the resistance, the inductance and the capacitance of the main component structures of the device respectively generate changes under the action of external pressure, and the change of the three physical quantities is subjected to a series of processing by using a measuring circuit to finally achieve the purpose of detecting the change of the external pressure. The traditional pressure sensor has low sensitivity and can achieve the purpose of measuring pressure by matching with peripheral circuits. The pressure sensor design based on the thin film transistor in recent years solves the problem of peripheral circuits to a certain extent, and simultaneously improves the sensitivity to a certain extent on the basis of the traditional pressure sensor, so that the pressure sensor based on the thin film transistor is the research direction of the pressure sensor in the future.
The existing pressure sensor based on the thin film transistor has high sensitivity and is difficult to have a large measurement range, and the pressure sensor with high sensitivity and large measurement range has complex preparation process and high cost.
Disclosure of Invention
In order to solve the problems, the invention provides a pressure sensor and a preparation method thereof, wherein the pressure sensor can improve the sensitivity and simultaneously has a large measurement range, and the preparation method simplifies the preparation process and reduces the preparation cost.
The specific technical scheme provided by the invention is as follows: the pressure sensor comprises a thin film transistor and a sensitive layer arranged on the thin film transistor, the thin film transistor comprises a semiconductor layer and a metal electrode, the metal electrode comprises a grid arranged at the top of the semiconductor layer, the sensitive layer comprises an upper sensitive layer, a microstructure array is arranged on the lower surface of the upper sensitive layer, the microstructure array comprises a plurality of microstructures arranged in an array mode, the sensitive layer further comprises a first conducting layer covering the surface of the microstructure array, and the first conducting layer is electrically connected with the grid.
Furthermore, the sensitive layer further comprises a lower sensitive layer and a second conductive layer, the lower sensitive layer is located between the upper sensitive layer and the grid, and the second conductive layer covers the upper surface of the lower sensitive layer and extends from one end of the lower sensitive layer to the surface of the grid.
Further, the bottom of the microstructure is provided with a groove.
Further, the depth of the groove is smaller than the thickness of the microstructure array, and/or the distance between two adjacent microstructures in the plurality of microstructures arranged in the array is equal.
Further, the microstructures and the grooves are cylindrical in shape.
Furthermore, the semiconductor layer comprises a substrate, an active layer and an insulating layer which are sequentially arranged on the substrate from bottom to top, the metal electrode further comprises a source electrode and a drain electrode which are arranged between the substrate and the active layer, and the source electrode and the drain electrode are respectively positioned at two ends of the substrate.
Further, the pressure sensor also comprises a resistance layer arranged between the insulating layer and the lower sensitive layer, and the resistance layer is positioned at one end of the grid and extends to the surface of the grid.
Further, the material of the sensitive layer is Polydimethylsiloxane (PDMS), and/or the material of the active layer is an amorphous Indium Gallium Zinc Oxide (IGZO) film.
The invention also provides a preparation method of the pressure sensor, which comprises the following steps:
providing a glass bottom plate and a thin film transistor, wherein the thin film transistor comprises a semiconductor layer and a metal electrode, and the metal electrode comprises a grid electrode arranged on the top of the semiconductor layer;
sequentially adopting a photoetching process and an etching process to form a template on the glass bottom plate;
spin-coating polydimethylsiloxane on the surface of the template, and heating and curing to form a cured layer on the surface of the template;
peeling the cured layer from the surface of the template to obtain an upper sensitive layer with a microstructure array, wherein the microstructure array comprises a plurality of microstructures arranged in an array;
evaporating a conductive film on the surface of the microstructure array to form a first conductive layer to obtain a sensitive layer;
assembling the sensitive layer onto the thin film transistor such that the first conductive layer is electrically connected with the gate.
Further, before assembling the sensitive layer on the thin film transistor, the preparation method further comprises:
spin-coating polydimethylsiloxane on the surface of the thin film transistor, heating and curing, and then forming a lower sensitive layer on the surface of the thin film transistor;
evaporating a conductive film on the surface of the lower sensitive layer to form a second conductive layer;
and laminating the second conductive layer and the first conductive layer through a laminating process to obtain the sensitive layer.
The pressure sensor provided by the invention comprises a thin film transistor and a sensitive layer, wherein the sensitive layer comprises an upper sensitive layer with a microstructure array and a first conducting layer covering the surface of the microstructure array, the sensitive layer is electrically connected with a grid electrode of the thin film transistor through the first conducting layer, and the microstructure array is arranged on the sensitive layer, so that the pressure sensor has high sensitivity and simultaneously has a large measurement range.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic structural diagram of a pressure sensor;
FIG. 2 is a cross-sectional view of a microstructure;
fig. 3 to 8 are flowcharts of a method of manufacturing the pressure sensor.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
Referring to fig. 1, the pressure sensor provided in this embodiment is a resistance-type pressure sensor, and includes a thin film transistor 1 and a sensitive layer 2 disposed on the thin film transistor 1. The thin film transistor 1 comprises a semiconductor layer and a metal electrode, the metal electrode comprises a grid electrode 11 arranged on the top of the semiconductor layer, the sensitive layer 2 comprises an upper sensitive layer 21, a microstructure array 21a is arranged on the lower surface of the upper sensitive layer 21, the microstructure array 21a comprises a plurality of microstructures 210 arranged in an array mode, the sensitive layer 2 further comprises a first conducting layer 22 covering the surface of the microstructure array 21a, and the first conducting layer 22 is electrically connected with the grid electrode 11.
The upper surface of the upper sensitive layer 21 is pressed to deform, the resistance value of the upper sensitive layer changes, the first conductive layer 22 is electrically connected with the grid 11 and used for converting the change of the resistance value into the change of voltage on the grid 11, and the change of the voltage on the grid 11 is amplified into the change of current of a source electrode and a drain electrode of the thin film transistor 1 through the thin film transistor 1, so that the pressure is detected according to the change of the current of the source electrode and the drain electrode of the thin film transistor 1. By providing the microstructure array 21a on the sensitive layer 2, the pressure sensor can have a large measurement range while having high sensitivity.
The sensitive layer 2 further includes a lower sensitive layer 23 and a second conductive layer 24, the lower sensitive layer 23 is located between the upper sensitive layer 21 and the thin film transistor 1, the second conductive layer 24 covers the upper surface of the lower sensitive layer 23, and the second conductive layer 24 is electrically connected to the first conductive layer 22. The lower sensitive layer 23 is used as a substrate of the whole sensitive layer 2, so that on one hand, the sensitivity of the whole pressure sensor can be improved, on the other hand, the thin film transistor 1 can be protected, and the thin film transistor 1 is prevented from being damaged due to uneven stress.
The distances between two adjacent microstructures 210 in the plurality of microstructures 210 arranged in an array are equal, so that the surface stress of the thin film transistor 1 is uniform, the sensitivity of the whole pressure sensor is further improved, and the thin film transistor 1 is prevented from being damaged due to uneven stress. In the present embodiment, the distance between two adjacent microstructures 210 is 0 to 5 μm.
The bottom of the microstructure 210 is provided with a groove 211, the depth of the groove 211 is smaller than the thickness of the microstructure array 21a, and the groove 211 is located at the center of the bottom of the microstructure 210. In the embodiment, the width of the microstructure 210 is equal to the distance between two adjacent microstructures 210, and the width of the groove 211 is 1-4 micrometers. When the sensitive layer 2 is subjected to a small pressure, the part of the microstructure 210 surrounding the groove 211 is greatly deformed to cause the change of the resistance of the upper sensitive layer 21, so that the pressure sensor can detect the deformation under the small pressure, and the sensitivity of the pressure sensor is improved; when the sensitive layer 2 is under a large pressure, the part of the microstructure 210 located at the top of the groove 211 is greatly deformed to cause the change of the resistance of the upper sensitive layer 21, so that the pressure sensor can detect the deformation under the large pressure, and the detection range of the pressure sensor is improved.
The large deformation can also be generated when the pressure sensor is subjected to small pressure, so that the sensitivity of the pressure sensor is improved, and meanwhile, the microstructure array 21a is arranged on the sensitive layer 2, so that the sensitive layer 2 can also be further deformed when the pressure sensor is subjected to large pressure, and the pressure sensor has a large measurement range.
Referring to fig. 2, in the present embodiment, the microstructures 210 and the grooves 211 are both cylindrical, and the cross-sectional shapes thereof are circular rings. Of course, in other embodiments, the shapes of the microstructure 210 and the groove 211 may be set according to actual needs, and are not limited herein.
The thin film transistor 1 in this embodiment is a top gate type, and further includes a substrate 12, an active layer 13, an insulating layer 14, and a source electrode 15 and a drain electrode 16, which are sequentially disposed on the substrate 12 from bottom to top, and disposed between the substrate 12 and the active layer 13, the source electrode 15 and the drain electrode 16 are respectively disposed at two ends of the substrate 12, the gate electrode 11 is disposed on the insulating layer 14, and the second conductive layer 24 extends from one end of the lower sensitive layer 23 to the surface of the gate electrode 11, so as to be electrically connected to the gate electrode 11. Of course, the thin film transistor 1 in this embodiment may also be another type of transistor, for example, a bottom gate type or a dual gate type, in this case, it is only necessary to electrically connect the second conductive layer 24 to the gate 11, for example, the second conductive layer 24 is connected to the gate 11 by a wire, or the second conductive layer 24 is connected to the gate 11 by setting the second conductive layer 24 to a different structure, or the second conductive layer 24 is connected to the gate 11 by another conductive structure layer.
In order to reduce the power consumption of the entire pressure sensor, the pressure sensor in this embodiment further includes a resistive layer 3 disposed between the insulating layer 14 and the lower sensitive layer 23, the resistive layer 3 is located at one end of the gate 11 and extends to the surface of the gate 11, wherein the resistive layer 3 and the second conductive layer 24 are electrically connected to two ends of the gate 11, respectively. Of course, the resistive layer 3 may be disposed at other places, and it is only necessary to connect it to the gate 11 and not to connect it to the second conductive layer 24, and the sensitive layer 2 and the resistive layer 3 constitute a gate voltage control unit of the thin film transistor 1, and the voltage of the gate 11 of the thin film transistor 1 can be adjusted by the resistive layer 3.
In this embodiment, the material of the sensitive layer 2 is PDMS, and the material of the active layer 13 is IGZO thin film. The pressure sensor has the advantages of being flexible and transparent due to the fact that the sensitive layer 2 is made of PDMS, and the active layer 13 is made of IGZO thin film, so that the thin film transistor in the embodiment has the characteristics of low threshold voltage and high on-off current ratio, and the sensitivity of the pressure sensor is improved. The thickness of the upper sensitive layer 21 is 100-500 micrometers, the thickness of the lower sensitive layer 23 is 300-500 micrometers, and the influence of the second conductive layer 24 on the gate 11 can be controlled by adjusting the thickness of the lower sensitive layer 23.
In this embodiment, the gate 11, the source 15, and the drain 16 are made of molybdenum, or aluminum, nickel, gold, ITO, silver, or a multi-layer material. The material of the insulating layer 14 may be aluminum oxide, hafnium oxide, silicon dioxide, or the like. The first conductive layer 22 and the second conductive layer 24 are made of conductive materials such as silver, gold film, silver nanowire, gold nanowire, carbon nanotube, and graphene. The resistance layer 3 may be made of zinc oxide, or may be made of other metals or metal oxides, for example, the resistance layer 3 is made of silver or molybdenum, or the resistance layer 3 is made of aluminum-doped zinc oxide. The thicknesses of the first conductive layer 22 and the second conductive layer 24 are both 50-100 nanometers.
Referring to fig. 3 to 8, the present embodiment further provides a method for manufacturing a pressure sensor, which is used to manufacture and obtain the pressure sensor, and the method includes:
step S1, providing a glass substrate 4 and a thin film transistor 1, where the thin film transistor 1 includes a gate 11, as shown in fig. 3.
Step S2, sequentially performing a photolithography process and an etching process to form a template 5 on the glass substrate 4, as shown in fig. 4.
Specifically, step S2 includes:
s21, depositing a molybdenum film on the glass substrate 4 by using a magnetron sputtering process, wherein the sputtering power is 100W, the gas pressure is 0.1Pa, the nitrogen flow is 18sccm, and the thickness of the molybdenum film is 3 um;
s22, spin-coating a photoresist on the molybdenum film at the spin-coating speed of 500r/min and 3000r/min, wherein the type of the photoresist is P1000, and heating the molybdenum film on a hot table at 120 ℃ for 3 minutes and 30 seconds; exposing for 5s by using a circular array photoetching plate with the pattern of which the diameter is 5um, and developing for 30s to form a circular array pattern;
s23, etching the molybdenum film by using 2% hydrogen peroxide as an etchant for 30S; as shown in fig. 4, the etched pattern formed by etching includes a plurality of first patterns 100 and second patterns 101 arranged at intervals, wherein the depth of the first pattern 100 is 2um, the width is 1.5um, the depth of the second pattern 101 is 1um, and the distances between the first pattern 100 and the second pattern 101 are equal; and then, washing the molybdenum film etched by the deionized water, putting the molybdenum film into an acetone solution for ultrasonic treatment for 5min to remove the photoresist on the surface of the molybdenum film, washing the molybdenum film by the deionized water, and drying the molybdenum film by nitrogen, thereby forming the template 5.
Step S3, spin coating PDMS on the surface of the template 5 and heating to cure the PDMS to form a cured layer 6 on the surface of the template 5, as shown in fig. 5.
Specifically, step S3 includes:
s31, mixing and stirring the PDMS precursor and the curing agent for 10 minutes according to the mass ratio of 10:1 to obtain a mixed solution;
s32, placing the mixed solution in a vacuum cavity for 10 minutes to remove air bubbles in the mixed solution;
s33, the mixed solution in the step S32 is spin-coated on the template 5 with a spin coater at a rotation speed of 800r/min, and then placed on a hot stage at 80 ℃ to be heated for 2 hours, obtaining a cured layer 6.
Step S4, peeling the cured layer 6 from the surface of the template 5 to obtain the upper sensitive layer 21 with the microstructure array 21a, where the microstructure array 21a includes a plurality of microstructures 210 arranged in an array, and the bottom of the microstructures 210 has a groove 211, as shown in fig. 6.
Specifically, in step S4, the solidified layer 6 after cooling is placed in a mixed solution of hydrogen peroxide and ammonia water and subjected to ultrasound for 10 minutes, the template 5 is dissolved, and the solidified layer 6 is detached from the glass substrate 4. The cured layer 6 was taken out, cleaned with deionized water by ultrasonic cleaning and dried at room temperature to obtain the upper sensitive layer 21 having the microstructure array 21a, and the obtained microstructure 210 had a width of 3.4 micrometers and a thickness of 2 micrometers, and the groove 211 had a width of 2 micrometers and a depth of 1 um.
Step S5, depositing a conductive film on the surface of the microstructure array 21a to form the first conductive layer 22, and obtaining the sensitive layer 2, as shown in fig. 7.
Specifically, in step S5, the upper sensitive layer 21 with the microstructure array 21a is placed in a vacuum chamber, and a silver thin film is evaporated by a thermal evaporation process, wherein the evaporation current is 90A, the evaporation rate is 1nm/S, the thickness of the silver thin film is 100 nm, and the first conductive layer 22 is formed on the surface of the microstructure array 21 a.
Step S6, the sensitive layer 2 is assembled on the thin film transistor 1, so that the first conductive layer 22 is electrically connected to the gate electrode 11.
Before step S6, the preparation method in this embodiment further includes:
spin-coating PDMS on the surface of the thin film transistor 1, heating and curing, and then forming a lower sensitive layer 23 on the surface of the thin film transistor 1, specifically, spin-coating PDMS on the surface of the gate 11 so that the PDMS completely covers the gate 11, and then removing the PDMS at one end of the gate 11 by a laser drilling process to expose one end of the gate 11, thereby forming the lower sensitive layer 23;
evaporating a conductive film on the surface of the lower sensitive layer 23 to form a second conductive layer 24, wherein the second conductive layer 24 covers the upper surface of the lower sensitive layer 23 and extends from one end of the lower sensitive layer 23, which is exposed out of the grid 11, to the surface of the grid 11, so that the second conductive layer 24 is electrically connected with the grid 11;
the second conductive layer 24 and the first conductive layer 22 are laminated through a lamination process to obtain the sensitive layer 2, specifically, the first conductive layer 22 and the second conductive layer 24 are attached and pressed at 120 ℃ to obtain the sensitive layer 2 having the upper sensitive layer 21, the first conductive layer 22, the lower sensitive layer 23 and the second guide layer 24, as shown in fig. 8.
The process of manufacturing the thin film transistor 1 in step S1 in this embodiment includes the following steps:
growing metal aluminum on the substrate 12 by using an electron beam evaporation process through a mask as a source electrode 15 and a drain electrode 16 respectively at a rate of 2.5nm/s, wherein the lengths of the source electrode 15 and the drain electrode 16 are both 20 microns, and the thicknesses of the source electrode 15 and the drain electrode 16 are both 200 nanometers;
growing an IGZO thin film on the substrate 12 by using a magnetron sputtering mask process to serve as an active layer 13, wherein the sputtering power is 200W, the pressure is 0.4Pa, the flow ratio of oxygen to nitrogen is 1:30, the length and width of a channel are 50 microns and 500 microns, and the thickness is 30 nanometers, so that the active layer 13 completely covers the substrate 12, the source electrode 15 and the drain electrode 16;
putting the substrate 12 with the active layer 13 in the atomic layer deposition equipment, and using trimethylaluminum and water to grow an alumina film as an insulating layer 14 at a speed of 1 angstrom per cycle and a thickness of the insulating layer 14 of 100 nanometers;
utilizing a magnetron sputtering mask process to grow a Mo film on the insulating layer 14 to serve as a grid 11, wherein the sputtering power is 300W, the pressure is 0.1Pa, the nitrogen flow is 18sccm, the length of the grid 11 is 80 microns, and the thickness of the grid 11 is 30 nanometers;
the substrate 12 on which the gate electrode 11 is grown is placed in a nitrogen atmosphere and annealed at 300 ℃ for 1 hour, and the desired thin film transistor 1 is obtained.
After the thin film transistor 1 is prepared, the preparation method of the embodiment further includes growing a zinc oxide thin film on the thin film transistor 1 as the resistance layer 3 by using a magnetron sputtering mask process, and adjusting the resistance value of the resistance layer 3 by using the conditions of sputtering power, pressure and the like. For example, the sputtering power is 220W, the pressure is 0.09Pa, the flow rate of argon is 20sccm, the flow rate of oxygen is 2sccm, the resistive layer 3 is a square with a length of 10 μm, the thickness is 200 nm, and the resistance value is 1 Mega ohm.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (8)
1. A pressure sensor is characterized by comprising a thin film transistor and a sensitive layer arranged on the thin film transistor, wherein the thin film transistor comprises a semiconductor layer and a metal electrode, the metal electrode comprises a grid arranged at the top of the semiconductor layer, the sensitive layer comprises an upper sensitive layer, the lower surface of the upper sensitive layer is provided with a microstructure array, the microstructure array comprises a plurality of microstructures arranged in an array manner, the sensitive layer further comprises a first conductive layer covering the surface of the microstructure array, and the first conductive layer is electrically connected with the grid; the bottom of the microstructure is provided with a groove, the microstructure and the groove are both cylindrical, and the depth of the groove is smaller than the thickness of the microstructure array.
2. The pressure sensor of claim 1, wherein the sensing layer further comprises a lower sensing layer located between the first conductive layer and the gate, and a second conductive layer covering an upper surface of the lower sensing layer and extending from one end of the lower sensing layer to a surface of the gate.
3. A pressure sensor as claimed in claim 1 or claim 2, wherein the plurality of microstructures in the array are arranged with equal spacing between adjacent microstructures.
4. The pressure sensor of claim 2, wherein the semiconductor layer comprises a substrate, an active layer and an insulating layer sequentially arranged on the substrate from bottom to top, and the metal electrode further comprises a source electrode and a drain electrode arranged between the substrate and the active layer, wherein the source electrode and the drain electrode are respectively arranged at two ends of the substrate.
5. The pressure sensor of claim 4, further comprising a resistive layer disposed between the insulating layer and the lower sensitive layer, the resistive layer being located at one end of the gate and extending to a surface of the gate.
6. The pressure sensor according to claim 4, wherein the material of the sensitive layer is polydimethylsiloxane, and/or the material of the active layer is an amorphous indium gallium zinc oxide film.
7. A method of making a pressure sensor, comprising:
providing a glass bottom plate and a thin film transistor, wherein the thin film transistor comprises a semiconductor layer and a metal electrode, and the metal electrode comprises a grid electrode arranged on the top of the semiconductor layer;
sequentially adopting a photoetching process and an etching process to form a template on the glass bottom plate;
spin-coating polydimethylsiloxane on the surface of the template, and heating and curing to form a cured layer on the surface of the template;
peeling the cured layer from the surface of the template to obtain an upper sensitive layer with a microstructure array, wherein the microstructure array comprises a plurality of microstructures arranged in an array, the bottoms of the microstructures are provided with grooves, the microstructures and the grooves are both cylindrical in shape, and the depth of each groove is smaller than the thickness of the microstructure array;
evaporating a conductive film on the surface of the microstructure array to form a first conductive layer to obtain a sensitive layer;
assembling the sensitive layer onto the thin film transistor such that the first conductive layer is electrically connected with the gate.
8. The method of manufacturing according to claim 7, wherein prior to assembling the sensitive layer onto the thin film transistor, the method further comprises:
spin-coating polydimethylsiloxane on the surface of the thin film transistor, heating and curing, and then forming a lower sensitive layer on the surface of the thin film transistor;
evaporating a conductive film on the surface of the lower sensitive layer to form a second conductive layer;
and laminating the second conductive layer and the first conductive layer through a laminating process, wherein the upper sensitive layer, the first conductive layer, the lower sensitive layer and the second conductive layer form a sensitive layer.
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| CN109540354B (en) * | 2018-12-03 | 2020-10-23 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN109556768B (en) * | 2018-12-03 | 2020-10-23 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN110459543B (en) * | 2019-07-17 | 2021-07-20 | 深圳大学 | Flash memory device and preparation method thereof |
| CN110346078B (en) * | 2019-07-30 | 2021-02-19 | 天津大学 | Capacitive flexible pressure sensor and preparation method and application thereof |
| CN111750975B (en) * | 2020-06-19 | 2022-03-15 | 电子科技大学 | Flexible vibration sensor with piezoresistive effect and preparation method thereof |
| CN111811701B (en) * | 2020-07-20 | 2021-10-29 | 中国科学院重庆绿色智能技术研究院 | Multistage microstructure gate thin film transistor flexible pressure sensor and preparation method thereof |
| CN113884226B (en) * | 2021-09-28 | 2023-03-24 | 上海交通大学 | Pressure sensor, pressure sensing array and preparation method thereof |
| CN114993523B (en) * | 2022-04-16 | 2023-04-11 | 福州大学 | Variable-area capacitive pressure sensor with circular-convex structure and preparation method thereof |
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| CN105841849B (en) * | 2016-03-25 | 2019-02-15 | 电子科技大学 | A kind of integrated device and preparation method of pliable pressure sensor and thin film transistor (TFT) |
| CN105865667B (en) * | 2016-05-19 | 2018-06-01 | 北京印刷学院 | Condenser type pliable pressure sensor based on micro-structural dielectric layer and preparation method thereof |
| CN106017751B (en) * | 2016-05-25 | 2018-08-10 | 东南大学 | A kind of high sensitivity piezoresistive pressure sensor and preparation method thereof |
| CN106768520B (en) * | 2016-12-28 | 2022-08-12 | 中国科学院深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN106950000B (en) * | 2017-03-29 | 2019-11-15 | 深圳大学 | A kind of Pulse pressure sensor, chip, device, system and preparation method thereof |
| CN106932128A (en) * | 2017-04-21 | 2017-07-07 | 清华大学深圳研究生院 | For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor |
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