CN104451545B - 一种ZnO薄膜材料、声表面波滤波器复合薄膜材料及制备方法 - Google Patents
一种ZnO薄膜材料、声表面波滤波器复合薄膜材料及制备方法 Download PDFInfo
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- CN104451545B CN104451545B CN201410663034.9A CN201410663034A CN104451545B CN 104451545 B CN104451545 B CN 104451545B CN 201410663034 A CN201410663034 A CN 201410663034A CN 104451545 B CN104451545 B CN 104451545B
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- 239000000463 material Substances 0.000 title claims abstract description 26
- 239000002131 composite material Substances 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000012528 membrane Substances 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 27
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 10
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims description 15
- 238000012360 testing method Methods 0.000 claims description 12
- 238000005546 reactive sputtering Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000002441 X-ray diffraction Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910001416 lithium ion Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 239000002113 nanodiamond Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 238000003780 insertion Methods 0.000 abstract description 10
- 230000037431 insertion Effects 0.000 abstract description 10
- 239000000523 sample Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
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CN201410663034.9A CN104451545B (zh) | 2014-11-19 | 2014-11-19 | 一种ZnO薄膜材料、声表面波滤波器复合薄膜材料及制备方法 |
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CN201410663034.9A CN104451545B (zh) | 2014-11-19 | 2014-11-19 | 一种ZnO薄膜材料、声表面波滤波器复合薄膜材料及制备方法 |
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CN104451545A CN104451545A (zh) | 2015-03-25 |
CN104451545B true CN104451545B (zh) | 2017-09-01 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105978520B (zh) * | 2016-05-12 | 2019-04-05 | 电子科技大学 | 一种多层结构的saw器件及其制备方法 |
CN106160691A (zh) * | 2016-07-05 | 2016-11-23 | 电子科技大学 | 一种基于Si基的高频SAW器件及其制备方法 |
CN107063521B (zh) * | 2017-04-28 | 2023-10-13 | 黑龙江大学 | 一种具有闭环功能的微力加载机构及其制作工艺与应用 |
CN108923763B (zh) * | 2018-06-01 | 2022-06-14 | 厦门市三安集成电路有限公司 | 一种高频saw之idt铜工艺制造方法 |
TWI703594B (zh) | 2020-03-23 | 2020-09-01 | 國立臺灣科技大學 | 超級電容電極及其製造方法與超級電容 |
CN112359325A (zh) * | 2020-11-04 | 2021-02-12 | 广东广纳芯科技有限公司 | 蒸镀设备及蒸镀方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101485086A (zh) * | 2006-07-05 | 2009-07-15 | 株式会社村田制作所 | 声表面波装置 |
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JP5869439B2 (ja) * | 2012-06-29 | 2016-02-24 | 富士フイルム株式会社 | ウルツァイト型複合酸化物及びそれを備えた圧電素子 |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101485086A (zh) * | 2006-07-05 | 2009-07-15 | 株式会社村田制作所 | 声表面波装置 |
Non-Patent Citations (2)
Title |
---|
Characteristics of ZnO thin film surface acoustic wave devices fabricated using nanocrystalline diamond film on silicon substrates;Wen-Ching Shih等;《DIAMOND AND RELATED MATERIALS》;20080208;第17卷(第3期);试验部分,图1,第392页左栏 * |
Enhancement of microfluidic efficiency with nanocrystalline diamond interlayer in the ZnO-based surface acoustic wave device;H.-F. Pang等;《Microfluidics and Nanofluidics》;20130303;全文 * |
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Inventor after: Chen Yunxiang Inventor after: Dong Jiahe Inventor after: Leng Junlin Inventor after: Li Hongping Inventor after: Yang Jie Inventor after: Zhang Yongchuan Inventor before: Chen Yunxiang Inventor before: Dong Jiahe Inventor before: Leng Junlin Inventor before: Li Hongping Inventor before: Yang Jie Inventor before: Zhang Yongchuan |
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Effective date of registration: 20220530 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
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Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Country or region after: China Address before: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Country or region before: China |
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