CN104425266A - 薄膜晶体管及使用该薄膜晶体管之显示阵列基板的制造方法 - Google Patents
薄膜晶体管及使用该薄膜晶体管之显示阵列基板的制造方法 Download PDFInfo
- Publication number
- CN104425266A CN104425266A CN201310371920.XA CN201310371920A CN104425266A CN 104425266 A CN104425266 A CN 104425266A CN 201310371920 A CN201310371920 A CN 201310371920A CN 104425266 A CN104425266 A CN 104425266A
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- Prior art keywords
- layer
- film transistor
- thin film
- etch stop
- transistor according
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- 238000000034 method Methods 0.000 title claims abstract description 69
- 239000010409 thin film Substances 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 238000000059 patterning Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 239000012212 insulator Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 18
- 239000011368 organic material Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 11
- 150000004706 metal oxides Chemical class 0.000 description 11
- 239000011651 chromium Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 229910001195 gallium oxide Inorganic materials 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
显示阵列基板 | 10 |
薄膜晶体管 | 100、200 |
栅极线 | 11 |
数据线 | 12 |
栅极 | 110、210 |
源极 | 120、220 |
漏极 | 130、230 |
基板 | 101、201 |
沟道层 | 103、203 |
栅极绝缘层 | 105、205 |
蚀刻阻挡层 | 107、207 |
有机阻挡层 | 207a |
硬遮罩层 | 207b |
光阻 | 109、209 |
光罩 | 14、24 |
透光部份 | 140、240 |
不透光部份 | 141、241 |
穿导孔 | H1、H2、H21、H22 |
接触孔 | O1、O2、O21、O22 |
步骤 | S301~S315、S401~S417 |
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310371920.XA CN104425266A (zh) | 2013-08-23 | 2013-08-23 | 薄膜晶体管及使用该薄膜晶体管之显示阵列基板的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310371920.XA CN104425266A (zh) | 2013-08-23 | 2013-08-23 | 薄膜晶体管及使用该薄膜晶体管之显示阵列基板的制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104425266A true CN104425266A (zh) | 2015-03-18 |
Family
ID=52973938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310371920.XA Pending CN104425266A (zh) | 2013-08-23 | 2013-08-23 | 薄膜晶体管及使用该薄膜晶体管之显示阵列基板的制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104425266A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298950A (zh) * | 2015-04-14 | 2017-01-04 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其制造方法 |
CN110854171A (zh) * | 2019-11-21 | 2020-02-28 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5348897A (en) * | 1992-12-01 | 1994-09-20 | Paradigm Technology, Inc. | Transistor fabrication methods using overlapping masks |
US20100032664A1 (en) * | 2008-08-06 | 2010-02-11 | Samsung Electronics Co., Ltd. | Thin film transistor substrate and a fabricating method thereof |
CN102651401A (zh) * | 2011-12-31 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及其制造方法和显示器件 |
CN102903674A (zh) * | 2011-07-26 | 2013-01-30 | 奇美电子股份有限公司 | 显示面板及其制作方法 |
WO2013061574A1 (ja) * | 2011-10-28 | 2013-05-02 | パナソニック株式会社 | 薄膜半導体装置 |
US20130140562A1 (en) * | 2010-04-19 | 2013-06-06 | Samsung Display Co., Ltd. | Display substrate and method of manufacturing the same |
US20130168667A1 (en) * | 2011-12-30 | 2013-07-04 | Hon Hai Precision Industry Co., Ltd. | Thin film transistor |
-
2013
- 2013-08-23 CN CN201310371920.XA patent/CN104425266A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5348897A (en) * | 1992-12-01 | 1994-09-20 | Paradigm Technology, Inc. | Transistor fabrication methods using overlapping masks |
US20100032664A1 (en) * | 2008-08-06 | 2010-02-11 | Samsung Electronics Co., Ltd. | Thin film transistor substrate and a fabricating method thereof |
US20130140562A1 (en) * | 2010-04-19 | 2013-06-06 | Samsung Display Co., Ltd. | Display substrate and method of manufacturing the same |
CN102903674A (zh) * | 2011-07-26 | 2013-01-30 | 奇美电子股份有限公司 | 显示面板及其制作方法 |
WO2013061574A1 (ja) * | 2011-10-28 | 2013-05-02 | パナソニック株式会社 | 薄膜半導体装置 |
US20130168667A1 (en) * | 2011-12-30 | 2013-07-04 | Hon Hai Precision Industry Co., Ltd. | Thin film transistor |
CN102651401A (zh) * | 2011-12-31 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及其制造方法和显示器件 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298950A (zh) * | 2015-04-14 | 2017-01-04 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其制造方法 |
CN106298950B (zh) * | 2015-04-14 | 2019-06-18 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其制造方法 |
CN110854171A (zh) * | 2019-11-21 | 2020-02-28 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
CN110854171B (zh) * | 2019-11-21 | 2022-09-13 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20161019 Address after: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Applicant after: Hongfujin Precise Industry (Shenzhen) Co., Ltd. Applicant after: Hon Hai Precision Industry Co., Ltd. Address before: Taiwan Hsinchu County Chinese jhubei City, Taiwan 1 yuan a Street No. 7 Building 1 Applicant before: YEXIN TECHNOLOGY CONSULATION CO., LTD. Applicant before: AU OPTRONICS CO., LTD. |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150318 |
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RJ01 | Rejection of invention patent application after publication |