CN104409341B - The method that Ohm contact electrode is prepared in silicon carbide substrates - Google Patents
The method that Ohm contact electrode is prepared in silicon carbide substrates Download PDFInfo
- Publication number
- CN104409341B CN104409341B CN201410669080.XA CN201410669080A CN104409341B CN 104409341 B CN104409341 B CN 104409341B CN 201410669080 A CN201410669080 A CN 201410669080A CN 104409341 B CN104409341 B CN 104409341B
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- carbide substrates
- contact electrode
- ohm contact
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 70
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims abstract description 4
- 238000010276 construction Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 5
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to electronic technology field, and in particular to a kind of Ohm contact electrode preparation method.The method that Ohm contact electrode is prepared in silicon carbide substrates, comprises the following steps：Step 1, the silicon carbide substrates of a setting doping concentration are prepared；Step 2, in photoetching Ohmic contact pattern in the silicon carbide substrates；Step 3, deposition film layer, to form composite construction；Step 4, Ohmic contact pattern is removed with the film layer of exterior domain to obtain Ohm contact electrode.The present invention can prepare the low-resistance Ohm contact of high quality so that carbofrax material is used to produce various power devices on a large scale and various novel sensor chips are possibly realized.
Description
Technical field
The present invention relates to electronic technology field, and in particular to a kind of Ohm contact electrode preparation method.
Background technology
Carborundum has that energy gap is big, high saturated electron drift velocity, high breakdown field strength, high heat conductance and anti-spoke
The ability excellent physicochemical characteristics such as strong and electrology characteristic are penetrated, in high temperature, high-frequency, high-power, radioresistance, non-volatile storage
The application scenarios such as device and short-wavelength light electronic device and photoelectricity are integrated are one of preferable semi-conducting materials, are particularly suitable in pole
Applied under end condition and adverse circumstances.
Although carbofrax material has very excellent property, yet with metal electrode and carbon under existing process conditions
The Ohmic contact of high quality can not be obtained between SiClx semi-conducting material, constrains its large-scale application.
The content of the invention
It is an object of the present invention to provide a kind of method that Ohm contact electrode is prepared in silicon carbide substrates, more than solution
Technical problem.
Technical problem solved by the invention can be realized using following technical scheme：
The method that Ohm contact electrode is prepared in silicon carbide substrates, wherein, comprise the following steps：
Step 1, the silicon carbide substrates of a setting doping concentration are prepared；
Step 2, in photoetching Ohmic contact pattern in the silicon carbide substrates；
Step 3, deposition film layer, to form composite construction；
Step 4, the Ohmic contact pattern is removed with the film layer of exterior domain to obtain Ohm contact electrode.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, the step 3 comprise the following steps that：
Step 31a, the first metal film layer is deposited in the silicon carbide substrates in an inert gas atmosphere；
Step 32a, in the second metal film layer is deposited on first metal film layer.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, the step 3 comprise the following steps that：
Step 31b, the first metal film layer is deposited in the silicon carbide substrates in an inert gas atmosphere；
Step 32b, in deposition Si layers on first metal film layer；
Step 33b, in the second metal film layer is deposited on the Si layers.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, in addition to step 5, in a design temperature bar
It is heat-treated under part.
Prepare the method for Ohm contact electrode in the silicon carbide substrates of the present invention, the design temperature is 400 DEG C, 500 DEG C,
600 DEG C or 700 DEG C.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, the doping concentration of the silicon carbide substrates are
3.2×10 18cm-3。
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, the silicon carbide substrates use n-type 4H-
SiC substrate.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, first metal film layer is Ti layers.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, second metal film layer is Au layers.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, it is multiple in being prepared in the silicon carbide substrates
The Ohm contact electrode, the spacing between the Ohm contact electrode are 50 μm, 100 μm, 150 μm, 200 μm or 250 μm.
Beneficial effect：Due to using above technical scheme, the present invention can prepare the low-resistance Ohm contact of high quality, make
Carbofrax material is used to produce various power devices and various novel sensor chips are possibly realized on a large scale.
Brief description of the drawings
Fig. 1 is the method flow schematic diagram of the present invention；
Fig. 2 is a kind of schematic flow sheet of embodiment of step 3 of the present invention；
Fig. 3 is the schematic flow sheet of another embodiment of step 3 of the present invention；
I-V curves of the Fig. 4 for Au/Ti/SiC systems in the case of unannealed；
Fig. 5 is corresponding with Fig. 4 than contact position resistivity calculated curve；
Fig. 6 is the I-V curve of 600 DEG C of annealings of Au/Ti/SiC systems；
Fig. 7 is corresponding with Fig. 6 than contact position resistivity calculated curve；
Fig. 8 is I-V curve relation of the Au/Si/Ti/SiC systems in different heat treatment temperature conditionss.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
Due under some extreme conditions and adverse circumstances, the performance of silicon carbide device is considerably beyond silicon (Si) device and arsenic
Change gallium (GaAs), in order to capture the technological difficulties that carbofrax material substrate contacts with metal, carry out substantial amounts of research, and obtain
Very big progress.But applicant has found in research process, although achievement in research can form Ohmic contact in the past,
It is required for carrying out high-temperature heat treatment, this low power consuming low stain requirement advocated with current countries in the world is not inconsistent, and easily causes resource wave
Take, environmental pollution and cost rise violently.
Reference picture 1, the present invention provide a kind of method that Ohm contact electrode is prepared in silicon carbide substrates, wherein, including with
Lower step：
Step 1, the silicon carbide substrates of a setting doping concentration are prepared；
Step 2, in photoetching Ohmic contact pattern in silicon carbide substrates；
Step 3, deposition film layer, to form composite construction；
Step 4, Ohmic contact pattern is removed with the film layer of exterior domain to obtain Ohm contact electrode.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, a kind of specific embodiment,
Reference picture 2, the specific steps of step 3 can be as follows：
Step 31a, deposit the first metal film layer on silicon carbide substrates in an inert gas atmosphere；
Step 32a, in the second metal film layer is deposited on the first metal film layer.
The first metallic film can be deposited in high vacuum argon gas atmosphere on silicon carbide substrates using magnetically controlled sputter method
Layer, photoresist cover whole first metal film layer, and Ohmic contact pattern the first metal of overlying regions is peeled off using stripping technology
Photoresist in film layer, then the second metal film layer is deposited, the film layer of designated area is peeled off finally to obtain Au/
The Ohm contact electrode of Ti/SiC systems.It should be noted that：Change and film layer of the designated area according to semiconductor technology
Sedimentary sequence and change, be not limited herein.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, another specific embodiment, reference picture 3,
Step 3 comprises the following steps that：
Step 31b, deposit the first metal film layer on silicon carbide substrates in an inert gas atmosphere；
Step 32b, in deposition Si layers on the first metal film layer；
Step 33b, in the second metal film layer is deposited on Si layers.
Equally the first metal can be deposited in high vacuum argon gas atmosphere on silicon carbide substrates using magnetically controlled sputter method
Film layer, redeposited Si layers, is then deposited the second metal film layer, is needed during step 3 according to technique to specifying area
The film layer in domain is peeled off finally to obtain the Ohm contact electrode of Au/Si/Ti/SiC systems.It should be noted that：Specify
Region changes according to the change of semiconductor technology and the sedimentary sequence of film layer, is not limited herein.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, the doping concentration of silicon carbide substrates is 3.2
×1018cm-3。
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, silicon carbide substrates are served as a contrast using n-type 4H-SiC
Bottom.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, the first metal film layer can be Ti layers.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, the second metal film layer can be Au layers.
The method of Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, in preparing multiple ohms in silicon carbide substrates
Electrode is contacted, the spacing range between Ohm contact electrode is 50 μm to 250 μm.
Prepare the method for Ohm contact electrode in the silicon carbide substrates of the present invention, the spacing between Ohm contact electrode can be with
Arranged in arithmetic progression, be 50 μm, 100 μm, 150 μm, 200 μm or 250 μm.
The method that Ohm contact electrode is prepared in the silicon carbide substrates of the present invention, can also include step 5, in a setting temperature
It is heat-treated under the conditions of degree.Design temperature can be 400 DEG C or 500 DEG C or 600 DEG C or 700 DEG C.
The present invention is analyzed the performance of the Ohm contact electrode of preparation by test system, for Au/Ti/SiC bodies
The Ohm contact electrode of system, shown in reference picture 4, with regard to Ohmic contact can be obtained in the case of unannealed, reference picture 5, it can calculate
It is 1.26 × 10 to its ohmic contact resistance-6Ω·cm2.Further to verify influence of the rapid thermal treatment to electric property, again
Heat treatment test, reference picture 6 and Fig. 7 have been carried out at different temperature, under 600 DEG C of heat treatment conditions of argon gas atmosphere, have been obtained
Minimum ohmic contact resistance is 6.4 × 10-7Ω·cm2.When higher than 700 DEG C, ohm electrical properties are deteriorated；800 DEG C are quickly moved back
An ohm property is just lost completely after fire processing.
For the Ohm contact electrode of Au/Si/Ti/SiC systems, reference picture 8, in the case where not carrying out heat treatment condition, equally
Ohmic contact property is shown, by ohmic contact resistance is calculated as 1.18 × 10-5Ω·㎝2.With annealing temperature
Rise, ohmic contact resistance are gradually reduced, and at 500 DEG C, obtain minimal-contact resistance, are 5.6 × 10-6Ω·cm2.Work as annealing
Treatment temperature is higher than after 500 DEG C, and ohm contact performance is deteriorated, and laboratory sample just gradually loses after higher than 700 DEG C processing
The property of Ohmic contact.
In order to probe into influence of the surface topography to ohm contact performance, using SEM SEM to sample surfaces
Studied.When without heat treatment or the surface topography of Au/Ti/SiC systems all compares Au/Si/Ti/ after being heat-treated
The surface of SiC systems is smooth.Smooth sample surfaces, there is very big facilitation to the performance for improving Ohmic contact.With
The continuous progress of growing silicon carbice crystals technology, the large-sized carborundum crystals material of high quality are progressively applied to the biography of a new generation
In the power electronic devices such as sensor, high-frequency high-power switch, and various power devices, microelectronics core will be produced by large-scale use
Piece, especially in various novel sensor chip fields.The present invention can prepare the low-resistance Ohm contact of high quality so that carbon
Silicon nitride material is used to produce various power devices on a large scale and various novel sensor chips are possibly realized.
Preferred embodiments of the present invention are the foregoing is only, not thereby limit embodiments of the present invention and protection model
Enclose, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Scheme obtained by equivalent substitution and obvious change, should be included in protection scope of the present invention.
Claims (7)
1. the method for Ohm contact electrode is prepared in silicon carbide substrates, it is characterised in that comprise the following steps：
Step 1, prepare the silicon carbide substrates of a setting doping concentration, the doping concentrations of the silicon carbide substrates for 3.2 ×
1018cm-3；
Step 2, in photoetching Ohmic contact pattern in the silicon carbide substrates；
Step 3, deposition film layer, to form composite construction；
Step 4, the Ohmic contact pattern is removed with the film layer of exterior domain to obtain Ohm contact electrode；
Also include step 5, be heat-treated under the conditions of a design temperature, the design temperature is 400 DEG C, 500 DEG C, 600 DEG C
700 DEG C or without heat treatment.
2. the method for Ohm contact electrode is prepared in silicon carbide substrates according to claim 1, it is characterised in that the step
Rapid 3 comprise the following steps that：
Step 31a, the first metal film layer is deposited in the silicon carbide substrates in an inert gas atmosphere；
Step 32a, in the second metal film layer is deposited on first metal film layer.
3. the method for Ohm contact electrode is prepared in silicon carbide substrates according to claim 1, it is characterised in that the step
Rapid 3 comprise the following steps that：
Step 31b, the first metal film layer is deposited in the silicon carbide substrates in an inert gas atmosphere；
Step 32b, in deposition Si layers on first metal film layer；
Step 33b, in the second metal film layer is deposited on the Si layers.
4. the method for Ohm contact electrode is prepared in silicon carbide substrates according to claim 1, it is characterised in that the carbon
Silicon substrate uses n-type 4H-SiC substrates.
5. the method for Ohm contact electrode is prepared in the silicon carbide substrates according to Claims 2 or 3, it is characterised in that institute
It is Ti layers to state the first metal film layer.
6. the method for Ohm contact electrode is prepared in the silicon carbide substrates according to Claims 2 or 3, it is characterised in that institute
It is Au layers to state the second metal film layer.
7. the method for Ohm contact electrode is prepared in silicon carbide substrates according to claim 1, it is characterised in that in described
Prepare multiple Ohm contact electrodes in silicon carbide substrates, the spacing between the Ohm contact electrode is 50 μm, 100 μm,
150 μm, 200 μm or 250 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410669080.XA CN104409341B (en) | 2014-11-20 | 2014-11-20 | The method that Ohm contact electrode is prepared in silicon carbide substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410669080.XA CN104409341B (en) | 2014-11-20 | 2014-11-20 | The method that Ohm contact electrode is prepared in silicon carbide substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104409341A CN104409341A (en) | 2015-03-11 |
| CN104409341B true CN104409341B (en) | 2017-11-14 |
Family
ID=52646958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410669080.XA Active CN104409341B (en) | 2014-11-20 | 2014-11-20 | The method that Ohm contact electrode is prepared in silicon carbide substrates |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409341B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123593A (en) * | 2017-04-11 | 2017-09-01 | 山东大学 | One kind mixes germanium carborundum Ohmic contact forming method |
| CN107369617B (en) * | 2017-07-06 | 2019-12-24 | 西安交通大学 | SiC high-temperature ohmic contact electrode and manufacturing method thereof |
| CN108899756B (en) * | 2018-06-06 | 2020-04-28 | 青岛海信宽带多媒体技术有限公司 | Method for depositing metal electrode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201032635Y (en) * | 2006-12-23 | 2008-03-05 | 厦门三优光机电科技开发有限公司 | PIN structure 4H-SiC ultraviolet photoelectric detector |
| CN102859661A (en) * | 2010-04-14 | 2013-01-02 | 住友电气工业株式会社 | Silicon carbide semiconductor device and method for manufacturing same |
| CN103094073A (en) * | 2013-01-17 | 2013-05-08 | 上海师范大学 | Preparation method of semi-insulating silicon carbide substrate titanium ohmic contact electrode |
-
2014
- 2014-11-20 CN CN201410669080.XA patent/CN104409341B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201032635Y (en) * | 2006-12-23 | 2008-03-05 | 厦门三优光机电科技开发有限公司 | PIN structure 4H-SiC ultraviolet photoelectric detector |
| CN102859661A (en) * | 2010-04-14 | 2013-01-02 | 住友电气工业株式会社 | Silicon carbide semiconductor device and method for manufacturing same |
| CN103094073A (en) * | 2013-01-17 | 2013-05-08 | 上海师范大学 | Preparation method of semi-insulating silicon carbide substrate titanium ohmic contact electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104409341A (en) | 2015-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103400865B (en) | GaN Schottky diode based on polarization doping | |
| CN1088256C (en) | Method of producing ohmic contact and semiconductor device | |
| CN102227000B (en) | Silicon carbide MOSFET device based on super junction and preparation method | |
| CN103400866B (en) | GaN Schottky diode based on modulation doping | |
| CN104409341B (en) | The method that Ohm contact electrode is prepared in silicon carbide substrates | |
| CN104752494A (en) | Diamond material ohmic contact electrode and preparation method and application thereof | |
| CN108767108A (en) | Hall device preparation method and hall device | |
| CN105951055B (en) | A kind of preparation method of two dimension tin alkene material | |
| CN103928524B (en) | Carborundum UMOSFET devices and preparation method with N-type drift layer table top | |
| CN109368685A (en) | A kind of preparation method of the p-type cuprous iodide film of highly transparent conduction | |
| CN107785250A (en) | Silicon carbide-based Schottky contacts preparation method and Schottky diode manufacture method | |
| CN108321213A (en) | The preparation method and its structure of SiC power diode devices | |
| CN102856141B (en) | A kind of in-situ oxidation improves the method for silicon nanowire array field emission performance | |
| Ganguly et al. | Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts | |
| Liu et al. | Synthesis, characterization and fabrication of ultrathin iron pyrite (FeS 2) thin films and field-effect transistors | |
| CN104393031B (en) | Insertion layer composite structure and manufacturing method thereof | |
| CN103928345B (en) | Ion implanting forms the UMOSFET preparation method of N-type heavy doping drift layer table top | |
| CN106449773A (en) | GaN-based Schottky diode structure and manufacturing method thereof | |
| CN106920847A (en) | A kind of top-gated graphene field effect transistor and preparation method thereof | |
| CN109786447B (en) | P-type SiC ohmic contact material and preparation method thereof | |
| US10192970B1 (en) | Simultaneous ohmic contact to silicon carbide | |
| JP2008544945A (en) | Oxygen-sensitive silicon layer and method for obtaining the silicon layer | |
| CN115377224A (en) | Gallium oxide Schottky diode with high-breakdown bipolar field limiting ring structure and preparation method thereof | |
| CN103928346B (en) | It is epitaxially-formed the UMOSFET device preparation method of N-type heavy doping drift layer table top | |
| CN105244267B (en) | A kind of Ohmic contact method of silicon carbide PiN device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |