CN104362216A - Production method of front grid line electrode of crystalline silicon solar cell - Google Patents
Production method of front grid line electrode of crystalline silicon solar cell Download PDFInfo
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- CN104362216A CN104362216A CN201410570419.0A CN201410570419A CN104362216A CN 104362216 A CN104362216 A CN 104362216A CN 201410570419 A CN201410570419 A CN 201410570419A CN 104362216 A CN104362216 A CN 104362216A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 38
- 238000004519 manufacturing process Methods 0.000 title abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000007650 screen-printing Methods 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000007639 printing Methods 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 41
- 238000007747 plating Methods 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 235000008216 herbs Nutrition 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 239000011268 mixed slurry Substances 0.000 claims description 2
- 239000011265 semifinished product Substances 0.000 claims description 2
- 210000002268 wool Anatomy 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 abstract description 8
- 238000010329 laser etching Methods 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 239000004332 silver Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 10
- 229910017052 cobalt Inorganic materials 0.000 description 9
- 239000010941 cobalt Substances 0.000 description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 5
- 229910021334 nickel silicide Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000192 social effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a production method of a front grid line electrode of a crystalline silicon solar cell. The production method includes the specific steps: printing an electrode seed layer on a silicon chip with a PN junction and an aluminum back electrode by using the screen printing technique; depositing a layer of silicon nitride antireflection film on the front of the silicon chip; removing silicon nitride on the surface of the seed layer by using the laser etching technique to enable the seed layer to be exposed so as to realize silicon chip slotting and annealing; electroplating the front grid line electrode by means of light-induced electroplating and electroplating techniques to form a complete crystalline silicon solar cell. The traditional screen printing process is combined, and the present light-induced electroplating technique is fused. In the process that the seed layer is produced, temperature conditions in related steps are utilized effectively to achieve annealing on the seed layer, and thus, cost is saved; good Ohmic contact is formed between the produced front grid line electrode and a silicon body; the front grid line electrode is even, dense and good in conductivity, series resistance of a device is low, electrode adhesion is increased, production cost is low, and output efficiency is high.
Description
Technical field
The invention belongs to technical field of solar utilization technique, be specifically related to the preparation method of gate line electrode before a kind of crystal silicon solar energy battery.
Background technology
Along with traditional petrochemical industry non-renewable energy resources coal, oil, natural gas etc. signal for help repeatedly, when energy problem becomes the bottleneck of restriction international community economic development day by day, increasing country starts sight to be turned to green, environmental protection, reproducible solar energy, wind energy, and water can wait novel energy.But it is wherein important with solar energy again.Therefore developing solar energy resources, is the new power promoting countries in the world economic development.Substitute For Partial conventional energy resource is not only wanted in solar energy power generating, and will become the main body of world energy supplies, can occupy the important seat of world energy sources consumption in the near future.Since crystal silicon solar energy battery comes out, through over half a century technological improvement, develop the solar battery product of multiple geometry and manufacturing process.Prior art crystal silicon solar energy battery common structure comprises aluminum back electrode, PN silicon metal matrix, front gate electrode and antireflection layer, and its manufacturing process comprises: cleaning and texturing, diffusion PN tie, wash phosphorus and etching, preparation reflector, electrode print, back electrode passivation, high temperature sintering and testing, sorting.
At present, gate electrode before industrial employing silk screen printing silver electrode technology preparation silver, then carries out Fast Sintering, and the organic substance in silver slurry can react with silicon nitride antireflection layer and remove silicon nitride to form the contact of silver to silicon.The simple maturation of this method technique, equipment capacity are higher, obtain large-scale application, but there is following defect: can produce the nonconducting vitreum of one deck between the silver electrode 1, after sintering and silicon, contact resistance is very large; 2, in silver slurry, organic substance evaporates in sintering process, and make silver electrode be loose porous structure, the volume resistance of electrode is large; 3, the grid line of silk screen printing is generally greater than 80 μm, and be difficult to reduce live width, and one-step print can only to produce the line being less than 25 μm high, although family's grid line thickness can be increased by secondary printing, but grid line can be caused to widen further, therefore electrode depth-width ratio is little, and wider live width reduces the work area of solar cell, therefore shadow loss is large; Expensive due to ag material itself, in addition current silver-colored slurry technology monopolize by external major company, cause photovoltaic enterprise production cost significantly to raise.Before the crystal silicon solar energy battery of new development in gate line electrode technology of preparing again based on lbg or photoetching fluting Seed Layer, concrete manufacturing process comprises: cleaning and texturing, diffusion PN knot, wash phosphorus and etching, preparation reflector, printing aluminum back electrode, aluminum back electrode passivation, laser (photoetching) slotted electrode Seed Layer, electrosilvering or electronickelling, RTP short annealing, electro-coppering, tin.This technique overcomes the shortcoming existing for screen printing technique to a certain extent, but in the process of cutting complex process, technical requirement is high, lbg is easy to damage PN junction, and the production cycle is long, add production cost to a certain extent, be unfavorable for large-scale industrial production.
Therefore, the preparation technology of gate line electrode before a kind of new crystal silicon solar energy battery is developed, the advantages such as realize production efficiency high, production cost is low, and the contact resistance of battery is little, and volume resistance is little, and shadow loss is low.And improve the performance of crystal silicon solar energy battery to a certain extent, there are great economy and social effect to crystal silicon solar energy battery, and more wide development and application prospect.
Summary of the invention
The object of the present invention is to provide a kind ofly be convenient to combine with modern industry production technology, production technology is simple, the preparation method of gate line electrode before front gate line electrode and crystalline silicon contact resistance is little, electrode body resistance is little, shadow loss is little, cost of manufacture is low, electricity conversion is high a kind of crystal silicon solar energy battery.
The object of the present invention is achieved like this, and the preparation method of gate line electrode before a kind of crystal silicon solar energy battery, is characterized in that possessing following steps:
1. gate line electrode Seed Layer before the front silk screen printing with aluminum back electrode, PN junction crystal silicon chip;
2. deposited silicon nitride antireflection layer;
3. the silicon nitride on the front gate line electrode surface of method removing of laser grooving;
4. gate line electrode before plating;
5. gate line electrode protective layer metal before plating.
Crystal silicon chip used is through the semi-finished product crystal silicon solar cell sheet of the technological processes such as making herbs into wool, phosphorus diffusion, dephosphorization silex glass, printing aluminum back electrode.
Before described silk screen printing, gate line electrode seed layer materials is the mixed slurry of the one or any bi-material in Ni, Co, W, and the thin grid line width of silk screen printing is 20 μm-80 μm, and main gate line width is 1mm-2mm, and the thickness of grid line is 10nm-100nm.
Described employing pecvd process, deposited silicon nitride antireflection layer on crystal silicon chip before printing after gate line electrode Seed Layer, depositing temperature is 275 DEG C-450 DEG C, and the thickness of silicon nitride layer is 60nm-100nm, and utilizes temperature during deposition to carry out annealing in process to Seed Layer.
The method of described laser grooving is the silicon nitride utilizing laser to remove Seed Layer surface, carries out double annealing to Seed Layer simultaneously, forms ohmic contact layer.
Described front gate line electrode is Cu, Ag or its alloy electrode.
Described front gate line electrode is formed by the one or any two kinds of methods mixing plating in the methods such as photoinduction plating, crossing current plating, constant voltage plating, pulse plating.
Described front gate line electrode protective layer is Sn, Ag metal material.
The present invention has not only combined traditional silk-screen printing technique but also has merged current photoinduction electroplating technology.In the process of preparation Seed Layer, the temperature conditions efficiently utilized in correlation step reaches the annealing process to Seed Layer, has saved cost; Good ohmic contact is formed between the front gate line electrode of preparation and silicon body; Front gate line electrode even compact, good conductivity, the series resistance of device is little, and electrode adhesion increases, and production cost is low, and output efficiency is high.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of method for manufacturing solar battery of the present invention;
In figure: A1 is aluminum back electrode, A2 is crystalline silicon P district, and A3 is crystalline silicon N district, and A4 is Seed Layer, and A5 is silicon nitride antireflection layer, and A6 is front gate line electrode, and A6 is front gate line electrode protective layer; B1 is silk screen printing Seed Layer, and B2 is physical vapour deposition (PVD) silicon nitride antireflection layer, and B3 is laser ablation, and B4 is gate line electrode before plating, and B5 is gate line electrode protective layer before plating.
Embodiment
The preparation method of gate line electrode before a kind of crystal silicon solar energy battery of the present invention.It has following steps: on the silicon chip with PN junction and aluminum back electrode, utilize screen printing technique, gate line electrode Seed Layer before printing; One deck silicon nitride anti-reflecting film is deposited in the front of silicon chip; Utilize laser etching techniques to remove the silicon nitride on Seed Layer surface, Seed Layer is come out, thus realize the object to silicon chip fluting and annealing; Utilize photoinduction plating, the front gate line electrode of electroplating technology plating and front gate line electrode protective layer, thus form complete crystal silicon solar cell sheet.
The present invention includes crystalline silicon P-N knot, P district back electrode, described P district back electrode and crystalline silicon P-N tie and are electrically connected, and the surface, N district of crystalline silicon P-N knot makes front gate electrode; Described front gate line electrode is by high-conductive metal and by silk screen printing, and electroplating technology is formed.
Gate line electrode before crystalline silicon of the present invention, be by utilize traditional silk-screen printing technique directly on crystalline silicon PN junction substrate make before gate line electrode Seed Layer, the width of the thin grid line of Seed Layer is 20 μm-80 μm, and the width of main gate line is 1mm-2mm; Front gate line electrode seed layer materials is the mixture of one or any two kinds in nickel slurry, cobalt slurry, tungsten slurry.
Gate line electrode before crystalline silicon of the present invention, be, film uniform pecvd process deposited silicon nitride antireflection layer fast by film forming speed by the surface at crystal silicon solar energy battery, depositing temperature is 275 DEG C-450 DEG C.Utilize that the temperature of deposited silicon nitride is dried front gate line electrode Seed Layer slurry, annealing in process simultaneously, form silicide.The thickness of the antireflective coating silicon nitride of deposition is 60nm-100nm.
Gate line electrode before crystalline silicon of the present invention removes the silicon nitride antireflection layer on Seed Layer surface by the method for laser grooving.Utilize the energy of laser to carry out double annealing process to front gate line electrode Seed Layer simultaneously, ensure the formation of silicide, reduce contact berrier and the contact resistance of electrode and crystalline silicon.
Gate line electrode before crystalline silicon of the present invention is that electrode metal is copper, silver by being electroplated by the one or any two kinds of methods mixing in the methods such as photoinduction plating, crossing current plating, constant voltage plating, pulse plating.The front gate line electrode even compact, the good conductivity that utilize electric plating method to obtain, the contact of electrode and crystalline silicon well, strong adhesion.
Gate line electrode before crystalline silicon of the present invention, is by front gate line electrode electroplating surface one deck silver or tin, protects front gate line electrode on the one hand, on the other hand the welding of electrode.Thus add the useful life of battery and be convenient to the assembling in battery later stage.
embodiment 1:select the crystal silicon chip with aluminum back electrode; it is 40 μm at the thin grid line width of the front silk screen printing of silicon chip; main gate line width is the front gate line electrode Seed Layer slurry of 1.5mm is nickel slurry; under the condition of 300 DEG C; adopt PECVD(Plasma Enhanced Chemical Vapor Deposition) the silicon nitride antireflection layer of plasma enhanced chemical vapor deposition process deposits 80nm thickness; utilize the silicon nitride on the method removing Seed Layer surface of laser grooving, gate line electrode before utilizing the electro-coppering of photoinduction electric plating method the electrotinning protective layer that flows over.After testing, the battery that before the crystalline silicon obtained according to this technique, the series resistance of gate line electrode even compact, battery is prepared far below prior art; Nickel silicide is had to generate at electrode and crystalline silicon contact position; The battery mean height about 0.26% that the efficiency of whole electrode is prepared than prior art, the adhesive force of front gate line electrode and crystalline silicon increases about 21%.Utilize copper electrode to replace the front gate line electrode of silver, cost-saving about 0.7 yuan of every sheet cell piece, greatly reduces crystal silicon cell production cost.
embodiment 2:select the crystal silicon chip with aluminum back electrode; it is 60 μm at the thin grid line width of the front silk screen printing of silicon chip; main gate line width is the front gate line electrode Seed Layer slurry of 1.5mm is nickel slurry; under the condition of 400 DEG C; adopt the silicon nitride antireflection layer of pecvd process deposition 70nm thickness; utilize the silicon nitride on the method removing Seed Layer surface of laser grooving, gate line electrode before utilizing the electro-coppering of constant voltage electric plating method the electrotinning protective layer that flows over.After testing, the battery that before the crystalline silicon obtained according to this technique, the series resistance of gate line electrode even compact, battery is prepared far below prior art; Nickel silicide is had to generate at electrode and crystalline silicon contact position; The battery mean height about 0.18% that the efficiency of whole electrode is prepared than prior art, the adhesive force of front gate line electrode and crystalline silicon increases about 23.4%.Utilize copper electrode to replace the front gate line electrode of silver, cost-saving about 0.75 yuan of every sheet cell piece, greatly reduces crystal silicon cell production cost.
embodiment 3:select the crystal silicon chip with aluminum back electrode; it is 50 μm at the thin grid line width of the front silk screen printing of silicon chip; main gate line width is the front gate line electrode Seed Layer slurry of 1mm is cobalt slurry; under the condition of 450 DEG C; adopt the silicon nitride antireflection layer of pecvd process deposition 90nm thickness; utilize the silicon nitride on the method removing Seed Layer surface of laser grooving, gate line electrode before utilizing the electro-coppering of photoinduction electric plating method the electrotinning protective layer that flows over.After testing, the battery that before the crystalline silicon obtained according to this technique, the series resistance of gate line electrode even compact, battery is prepared far below prior art; Cobalt silicide is had to generate at electrode and crystalline silicon contact position; The battery mean height about 0.23% that the efficiency of whole electrode is prepared than prior art, the adhesive force of front gate line electrode and crystalline silicon increases about 25.3%.Utilize copper electrode to replace the front gate line electrode of silver, cost-saving about 0.7 yuan of every sheet cell piece, greatly reduces crystal silicon cell production cost.
embodiment 4:select the crystal silicon chip with aluminum back electrode; it is 50 μm at the thin grid line width of the front silk screen printing of silicon chip; main gate line width is the front gate line electrode Seed Layer slurry of 1mm is cobalt slurry; under the condition of 450 DEG C; adopt the silicon nitride antireflection layer of pecvd process deposition 90nm thickness; utilize the silicon nitride on the method removing Seed Layer surface of laser grooving, gate line electrode before utilizing constant current electric plating method electrosilvering the electrotinning protective layer that flows over.After testing, the battery that before the crystalline silicon obtained according to this technique, the series resistance of gate line electrode even compact, battery is prepared far below prior art; Cobalt silicide is had to generate at electrode and crystalline silicon contact position; The battery mean height about 0.27% that the efficiency of whole electrode is prepared than prior art, the adhesive force of front gate line electrode and crystalline silicon increases about 19%.
embodiment 5:select the crystal silicon chip with aluminum back electrode; it is 60 μm at the thin grid line width of the front silk screen printing of silicon chip; main gate line width is the front gate line electrode Seed Layer slurry of 1.5mm is the mixture that nickel slurry is starched with cobalt; under the condition of 400 DEG C; adopt the silicon nitride antireflection layer of pecvd process deposition 90nm thickness; utilize the silicon nitride on the method removing Seed Layer surface of laser grooving, gate line electrode before utilizing the electro-coppering of photoinduction electric plating method the electrotinning protective layer that flows over.After testing, the battery that before the crystalline silicon obtained according to this technique, the series resistance of gate line electrode even compact, battery is prepared far below prior art; Cobalt silicide and nickel silicide is had to generate at electrode and crystalline silicon contact position; The battery mean height about 0.18% that the efficiency of whole electrode is prepared than prior art, the adhesive force of front gate line electrode and crystalline silicon increases about 23%.Utilize copper electrode to replace the front gate line electrode of silver, cost-saving about 0.7 yuan of every sheet cell piece, greatly reduces crystal silicon cell production cost.
embodiment 6:select the crystal silicon chip with aluminum back electrode; it is 70 μm at the thin grid line width of the front silk screen printing of silicon chip; main gate line width is the front gate line electrode Seed Layer slurry of 2mm is the mixture that nickel slurry is starched with tungsten; under the condition of 450 DEG C; adopt the silicon nitride antireflection layer of pecvd process deposition 80nm thickness; utilize the silicon nitride on the method removing Seed Layer surface of laser grooving, gate line electrode before utilizing the electro-coppering of photoinduction electric plating method the electrotinning protective layer that flows over.After testing, the battery that before the crystalline silicon obtained according to this technique, the series resistance of gate line electrode even compact, battery is prepared far below prior art; Nickel silicide is had to generate at electrode and crystalline silicon contact position; The battery mean height about 0.13% that the efficiency of whole electrode is prepared than prior art, the adhesive force of front gate line electrode and crystalline silicon increases about 16%.Utilize copper electrode to replace the front gate line electrode of silver, cost-saving about 0.75 yuan of every sheet cell piece, greatly reduces crystal silicon cell production cost.
embodiment 7:select the crystal silicon chip with aluminum back electrode; it is 40 μm at the thin grid line width of the front silk screen printing of silicon chip; main gate line width is the front gate line electrode Seed Layer slurry of 2mm is the mixture that nickel slurry is starched with cobalt; under the condition of 380 DEG C; adopt the silicon nitride antireflection layer of pecvd process deposition 70nm thickness; utilize the silicon nitride on the method removing Seed Layer surface of laser grooving, gate line electrode before utilizing constant voltage electric plating method electrosilvering the electrotinning protective layer that flows over.After testing, the battery that before the crystalline silicon obtained according to this technique, the series resistance of gate line electrode even compact, battery is prepared far below prior art; Nickel silicide and cobalt silicide is had to generate at electrode and crystalline silicon contact position; The battery mean height about 0.37% that the efficiency of whole electrode is prepared than prior art, the adhesive force of front gate line electrode and crystalline silicon increases about 17.2%.
Claims (8)
1. the preparation method of gate line electrode before crystal silicon solar energy battery, is characterized in that possessing following steps:
Gate line electrode Seed Layer before the front silk screen printing with aluminum back electrode, PN junction crystal silicon chip;
Deposited silicon nitride antireflection layer;
The silicon nitride on gate line electrode surface before the method removing of laser grooving;
Gate line electrode before plating;
Gate line electrode protective layer metal before plating.
2. the preparation method of gate line electrode before a kind of crystal silicon solar energy battery according to claim 1, is characterized in that: crystal silicon chip used is through the semi-finished product crystal silicon solar cell sheet of the technological processes such as making herbs into wool, phosphorus diffusion, dephosphorization silex glass, printing aluminum back electrode.
3. the preparation method of gate line electrode before a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that: before described silk screen printing, gate line electrode seed layer materials is Ni, Co, the mixed slurry of the one or any bi-material in W, the thin grid line width of silk screen printing is 20 μm-80 μm, main gate line width is 1mm-2mm, and the thickness of grid line is 10nm-100nm.
4. the preparation method of gate line electrode before a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that: adopt pecvd process, deposited silicon nitride antireflection layer on crystal silicon chip before printing after gate line electrode Seed Layer, depositing temperature is 275 DEG C-450 DEG C, the thickness of silicon nitride layer is 60nm-100nm, and utilizes temperature during deposition to carry out annealing in process to Seed Layer.
5. the preparation method of gate line electrode before a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that: the method for described laser grooving is the silicon nitride utilizing laser to remove Seed Layer surface, double annealing is carried out to Seed Layer simultaneously, form ohmic contact layer.
6. the preparation method of gate line electrode before a kind of crystal silicon solar energy battery according to claim 1, is characterized in that: front gate line electrode is Cu, Ag or its alloy electrode.
7. the preparation method of gate line electrode before a kind of crystal silicon solar energy battery according to claim 1, is characterized in that: front gate line electrode mixes plating by the one or any two kinds of methods in the methods such as photoinduction plating, crossing current plating, constant voltage plating, pulse plating to form.
8. the preparation method of gate line electrode before a kind of crystal silicon solar energy battery according to claim 1, is characterized in that: front gate line electrode protective layer is Sn, Ag metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410570419.0A CN104362216B (en) | 2014-10-23 | 2014-10-23 | Production method of front grid line electrode of crystalline silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410570419.0A CN104362216B (en) | 2014-10-23 | 2014-10-23 | Production method of front grid line electrode of crystalline silicon solar cell |
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| Publication Number | Publication Date |
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| CN104362216A true CN104362216A (en) | 2015-02-18 |
| CN104362216B CN104362216B (en) | 2017-02-15 |
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| CN (1) | CN104362216B (en) |
Cited By (8)
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| CN106328759A (en) * | 2016-08-24 | 2017-01-11 | 山西潞安太阳能科技有限责任公司 | Coating process capable of increasing voltage of open circuit on back surface of polycrystalline silicon double-face solar battery |
| TWI631717B (en) * | 2016-10-05 | 2018-08-01 | 日商信越化學工業股份有限公司 | High photoelectric conversion efficiency solar cell manufacturing method and high photoelectric conversion efficiency solar cell |
| CN112054094A (en) * | 2020-09-08 | 2020-12-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solar cell and manufacturing method thereof |
| CN112133766A (en) * | 2020-09-18 | 2020-12-25 | 江苏东鋆光伏科技有限公司 | Crystalline silicon battery electrode prepared by electroplating method and preparation process thereof |
| CN113943955A (en) * | 2021-11-26 | 2022-01-18 | 苏州昶明微电子科技合伙企业(有限合伙) | Copper electroplating equipment and method |
| CN114551610A (en) * | 2022-03-11 | 2022-05-27 | 浙江爱旭太阳能科技有限公司 | Solar cell, electrode structure, cell module, power generation system and preparation method |
| CN114744073A (en) * | 2022-01-26 | 2022-07-12 | 深圳黑晶光电科技有限公司 | Method for realizing metallization of solar cell and crystalline silicon solar cell |
| CN115117183A (en) * | 2022-06-24 | 2022-09-27 | 三一集团有限公司 | Method for processing heterojunction battery |
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| CN113943955A (en) * | 2021-11-26 | 2022-01-18 | 苏州昶明微电子科技合伙企业(有限合伙) | Copper electroplating equipment and method |
| CN113943955B (en) * | 2021-11-26 | 2023-01-03 | 苏州昶明微电子科技合伙企业(有限合伙) | Copper electroplating equipment and method |
| CN114744073A (en) * | 2022-01-26 | 2022-07-12 | 深圳黑晶光电科技有限公司 | Method for realizing metallization of solar cell and crystalline silicon solar cell |
| CN114551610A (en) * | 2022-03-11 | 2022-05-27 | 浙江爱旭太阳能科技有限公司 | Solar cell, electrode structure, cell module, power generation system and preparation method |
| CN115117183A (en) * | 2022-06-24 | 2022-09-27 | 三一集团有限公司 | Method for processing heterojunction battery |
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