CN100483750C - Back point-contact silicon solar cell based on silk-screen printing technology and making method - Google Patents
Back point-contact silicon solar cell based on silk-screen printing technology and making method Download PDFInfo
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- CN100483750C CN100483750C CNB2005101230622A CN200510123062A CN100483750C CN 100483750 C CN100483750 C CN 100483750C CN B2005101230622 A CNB2005101230622 A CN B2005101230622A CN 200510123062 A CN200510123062 A CN 200510123062A CN 100483750 C CN100483750 C CN 100483750C
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000007650 screen-printing Methods 0.000 title claims abstract description 41
- 238000005516 engineering process Methods 0.000 title claims description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000005245 sintering Methods 0.000 claims abstract description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 230000007797 corrosion Effects 0.000 claims description 29
- 238000005260 corrosion Methods 0.000 claims description 29
- 239000004411 aluminium Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 18
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 16
- 238000001465 metallisation Methods 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 239000003518 caustics Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 238000007639 printing Methods 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 239000007790 solid phase Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 241000083513 Punctum Species 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 239000011268 mixed slurry Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Phosphorus diffusion formed PN junction is setup on P type silicon chip. There is silicon nitride layer, or surface passivation layer of silica, reflection reducing coating and positive electrode on front face. Characters are that through P type punctual alloy diffusion zone, back metal layer of silicon chip constitutes ohmic contact. Preparing method includes steps: selecting P type chip; preparing knap surface and cleaning; forming PN junction through phosphorus diffusion; etching and corroding edges by using plasma; developing silicon nitride or silica at both sides; preparing point contacted dense P+ zone at back side through screen printing by using solid-solid phase diffusion or selective gaseous phase diffusion; printing and sintering electrode through screen printing; adding metal layer to full back side. The solar cell reaches indexes: open circuit voltage larger than 650mV, current density larger than 38mA/cm2, fill factor as 74%-78% and conversion efficiency 18%-20%.
Description
Technical field
The present invention relates to a kind of solar cell, be specifically related to a kind of manufacture method that contacts the high efficiency, low cost silicon solar cell based on the back side point of silk-screen printing technique.
Background technology
Silicon solar cell is the device of a PN junction in fact, and the both sides of the photo-generated carrier that illumination produced being swept to PN junction by the electric field of PN junction form photogenerated current, reach the effect of opto-electronic conversion.In order to increase photo-generated carrier, the surface of solar cell is made into matte or pyramid-like structure increases light absorption, reduces the light reflection with antireflective coating simultaneously.In order to reduce the compound of photo-generated carrier, in the silicon body, all increased structure or the measure that reduces multiple mechanism with the surface.In vivo, select the silicon single crystal or the polycrystalline material of high-purity, zero defect, low oxygen content; Structurally adopt high-quality method of diffusion to form high-quality PN junction, the concentration on PN junction both sides is difficult for too dense, avoids forming " dead band "; Drift velocity of photo-generated carrier or the like is quickened by diffuseing to form back surface field in the back side.On the surface, reduce surface recombination by methods such as all kinds of passivating techniques such as PECVD grown silicon nitride films; Reduce the diffusion area in dense district, silicon chip two sides or the like.
The manufacture craft of silicon solar cell can be analogous to the technology of integrated circuit.But the low cost of solar cell has determined that its technology must be big production capacity and technology cheaply, and the conversion efficiency that reduces the technology cost of manufacture and improve solar cell is exactly major technology core place.Spread in the manufacture craft of solar cell with common diffusion technology, the surface passivation pecvd process, these two technologies are analogous to integrated circuit technology.Silk screen printing and sintering process are then adopted in metallization, and such technology production capacity is big and cost is low.Solar cell does not adopt photoetching process.
The main process that conventional silk screen printing solar cell technology is made is as follows:
1, silicon chip is selected P type 0.5～10 ohm-cm for use, thickness 0.2 μ m～0.4 μ m.
2, matte is made and is cleaned:
Make the two-sided formation matte of silicon chip by chemical corrosion method.
3, phosphorous diffusion forms PN junction.
4, plasma etching corrosion edge.
5, the PECVD grown silicon nitride is made surperficial passivation and antireflective film at the silicon chip upper surface.
6, screen printing electrode and sintering, wherein front metal is main grid line and time grid line; Back metal is the gross area contact.
Structure chart is seen Fig. 1: p-type silicon chip 1; Positive deposit silicon nitride passivation layer 2; The back of the body metal 4 of back side gross area.
The single crystal silicon solar cell efficient that conventional silk-screen printing technique is made is about 16%, and wherein open circuit voltage is about 600mV, and fill factor, curve factor is about 75%～78%, and current density is at～35mA/cm
2
The back of solar cell that conventional silk-screen printing technique is made is the Metal Contact of gross area, does not have surface passivation, and surface state is poor, and the open circuit voltage of battery and short circuit current all are subjected to very big influence, is conspicuous to the adverse effect of battery efficiency.
Summary of the invention
Low and the little shortcoming of short circuit current of the open circuit voltage that the silicon solar cell back side all-metal contact structures of making at the silk-screen printing technique of above-mentioned routine are caused, the present invention will provide a kind of silicon solar cell new construction based on conventional silk-screen printing technique: the silicon solar cell of back side point contact, the silicon solar cell of this backside point contact structures can obviously improve Solar cell performance, make the open circuit voltage of battery〉650mV, current density〉38mA/cm
2, fill factor, curve factor can reach 74%～78%, and the conversion efficiency of battery can reach 18%～20%.Simultaneously, the present invention also will provide the manufacture method of this silicon solar cell.
The scheme of finishing the foregoing invention task is: based on the back point-contact silicon solar cell of silk-screen printing technique, PN junction, front that P type silicon chip is provided with phosphorous diffusion formation are provided with silicon nitride layer or silicon dioxide layer surface passivation layer and antireflective film, and positive electrode.It is characterized in that this silicon chip back of the body metal level constitutes ohmic contact by p-type point-like alloy diffusion district, is provided with passivation layer between other parts of back of the body metal and the silicon chip back side.
In other words, the Facad structure of silicon solar cell of the present invention is the same with the solar cell that conventional silk-screen printing technique is made, and is through suede corrosion, front emitter phosphorous diffusion, PECVD silicon nitride passivation antireflective coating equally, metallization again.New construction is meant: it has increased the backside passivation layer and the contact of back side point of solar cell.
Described backside passivation layer is meant: the passivation layer at the back side can form by the PECVD grown silicon nitride, also can form the passivation layer of silicon dioxide by thermal oxidation.The thickness requirement of passivation layer is not strict, 1000
To 3000
Between get final product, too thin have a pin hole, too thickly then extends the process time, increases cost.
The contact of described back side point is meant: the back side by the some diffusion region as with the contacting of backplate.The back side then is a contact alloy diffusion, the point area of some contact can be at 200 μ m * more than the 200 μ m, the point of some contact is the face arrayed, point is controlled in the 1mm with the spacing of point, the ratio of the area of some contact and the gross area at the silicon chip back side is controlled between 0.1%～20%: ratio is more little, and the high short circuit current of open circuit voltage is big, but fill factor, curve factor descends, otherwise ratio greatly then, and the area of optimizing the some contact is than finding best conversion efficiency.
In p-type silicon substrate resistivity is under the condition of 1 Ω-CM, and the some contact area ratio of representative value is 0.5～2.5%, and the application recommends to adopt about 1.5%.
The size of some contact area is determined by the precision of silk screen printing; The slurry of printing can be aluminium paste, silver-colored aluminium paste etc., and also can use with aluminium element is the mixed slurry of other group iii elements of advocating peace; P-type silicon with body after the sintering diffusion forms ohmic contact and obtains certain degree of depth, and the temperature of sintering diffusion can be controlled at about 680 ℃～1150 ℃, and the degree of depth of the high more diffusion of temperature is dark more.
Printing slurry the application recommends to adopt aluminium boron slurry or based on the group iii elements mixed slurry of aluminium element.
The manufacture method of above structure is: on the basis that has general silk-screen printing technique now, print the diffuse source that back side point contacts by the method for silk screen printing, reach the purpose of selectivity diffusion, be connected with backplate by sintering process.This structure and process are widely used in the solar cell production technology of silk screen printing, and the solar cell according to this method is produced can improve 2%～4% absolute conversion efficiency.
Say that more specifically and more optimally the structure that above-mentioned back side point based on silk-screen printing technique contacts the high efficiency, low cost silicon solar cell is characterised in that:
1, the contact of cell backside base is that a contact is by P
+Dense district constitute, the concentration in dense district can be 10
18/ cm
3More than, the junction depth in dense district can be more than 0.5 μ m.
The upper limit of this dense district concentration is subjected to the restriction of manufacturing cost, and its concentration is high more under possible situation, and technique effect is good more.
2, Jie Chu P
+Dense district make by the method for solid phase-solid-state diffusion, selective vapor diffusion.
3, the formation method of some contact area, promptly described " method of solid phase-solid-state diffusion, selective vapor diffusion " can be:
A. silicon chip is positive through behind the phosphorous diffusion formation PN junction, two sides grown silicon nitride or silicon dioxide.The back side adopts silk screen printing to print silver-colored aluminium paste or other contain the some contact source of the dot matrix of group iii elements.Burning silicon nitride or silicon dioxide through high temperature sintering diffuses into silicon body again and forms dense diffusion region and ohmic contact.Form metallization through conventional back side all print silver aluminium paste sintering at last.
B. silicon chip is positive through behind the phosphorous diffusion formation PN junction, two sides grown silicon nitride or silicon dioxide.Utilize laser drilling to get the dot matrix zone of back side point contact, form metallization through conventional all print silver aluminium paste sintering diffusion back, the back side again.
C. after laser was made out the array of a contact, it is dark that this some contact degree of depth can be counted μ m.Clean a some contact hole through caustic corrosion again, the boron diffusion by routine forms dense boron diffusion in a contact hole.Form metallization through conventional back side all print silver aluminium paste sintering at last.
D. Jie Chu concentrated boron area also can be realized by the technology mode of " lift-off ", so-called " lift-off " technology is meant, utilize the method for silk screen printing will put the silicon chip back side of the diffuse source seal of contact (this diffuse source can be that group iii elements such as boron aluminium source is formed, but aluminium element is preferably arranged).Carry out solid-solid diffusion again, diffusion temperature, generally can form concentration and surpass 10 by such solid-solid diffusion at 950 ℃ to 1150 ℃
18/ cm
3P-type diffusion region with number μ m junction depth.After the some contact at the back side forms, do the passivation layer on positive phosphorous diffusion and two sides again.Utilize the corrosion of nitric acid corrosive liquid, the solid-solid diffusion source of back side point contact can be eroded, the passivation layer that is attached on the solid-solid diffusion source also refutes simultaneously, also just the some contact holes exposing in the dense district of p-type at the back side is come out.Next just can realize the double-sided metal contact by conventional metallization process.
4, simultaneously grown silicon nitride or silicon dioxide are as the passivation protection on two sides on the two sides of battery, and positive passivation layer also is an antireflection layer simultaneously.
5, above-mentioned in thirdly a and b be solid phase-solid-state diffusion after metallization again, metallization again after above-mentioned c in thirdly is the selective vapor diffusion.
The present invention is based on the manufacture method of the back point-contact silicon solar cell of silk-screen printing technique, may further comprise the steps:
Silicon chip is selected P type 0.5～10 ohm-cm for use, thickness 0.2 μ m～0.4 μ m;
Matte is made and is cleaned;
Phosphorous diffusion forms PN junction;
Plasma etching corrosion edge;
Two sides grown silicon nitride or silicon dioxide;
The back side is made the P of a contact by silk screen printing with the method for solid phase-solid-state diffusion or selective vapor diffusion
+Dense district;
Positive by screen printing electrode and sintering;
Back side gross area metal level.
In the above-mentioned manufacture method " method with the diffusion of solid phase-solid-state diffusion or selective vapor is made the P of a contact
+Dense district ", specifically can be selected from following method:
A. the silicon chip back side adopts silk screen printing to print silver-colored aluminium paste or other contain the some contact source of the dot matrix of group iii elements.Burning silicon nitride or silicon dioxide through high temperature sintering diffuses into silicon body again and forms dense diffusion region and ohmic contact.Form metallization through conventional back side all print silver aluminium paste sintering at last;
B. utilize laser drilling to get the dot matrix zone of back side point contact, form metallization through conventional all print silver aluminium paste sintering diffusion back, the back side again;
C. after laser was made out the array of a contact, it is dark that this some contact degree of depth can be counted μ m.Clean a some contact hole through caustic corrosion again, the boron diffusion by routine forms dense boron diffusion in a contact hole.Form metallization through conventional back side all print silver aluminium paste sintering at last;
D. Jie Chu concentrated boron area also can be realized by the technology mode of " lift-off ", so-called " lift-off " technology is meant, utilize the method for silk screen printing will put the silicon chip back side of the diffuse source seal of contact (this diffuse source can be that group iii elements such as boron aluminium source is formed, and aluminium element is preferably arranged).Carry out solid-solid diffusion again, diffusion temperature, generally can form concentration and surpass 10 by such solid-solid diffusion at 950 ℃ to 1150 ℃
18/ cm
3P-type diffusion region with number μ m junction depth.After the some contact at the back side forms, do the passivation layer on positive phosphorous diffusion and two sides again.Utilize the corrosion of nitric acid corrosive liquid, the solid-solid diffusion source of back side point contact can be eroded, the passivation layer that is attached on the solid-solid diffusion source also refutes simultaneously, also just the some contact holes exposing in the dense district of p-type at the back side is come out.Next just can realize the double-sided metal contact by conventional metallization process.
Back point-contact silicon solar cell based on silk-screen printing technique of the present invention has obviously improved the performance of battery, can make the open circuit voltage of battery〉650mV, current density〉38mA/cm
2, fill factor, curve factor is 74%～78%, and the conversion efficiency of battery can reach 18%～20%.Its manufacture method is simple and practical, can be directly used in suitability for industrialized production.
Specific embodiments
Embodiment 1:
Silicon chip basic demand: p-type silicon chip, resistivity: 0.5～10 Ω-CM, thickness: 250～400 μ m.
Manufacture craft is:
Clean;
Matte is made: (1) caustic corrosion (being generally 100 crystal orientation monocrystalline silicon).Corrosion depth 5～15 μ m.
(2) acid corrosion (being generally monocrystalline silicon or polysilicon except that 100 crystal orientation) corrosion depth 5～15 μ m.
(3) clean the HF rinsing
Phosphorous diffusion: square resistance 50～100 Ω-CM
Two sides deposit silicon nitride: PECVD, thickness～1000
Or thermal oxidation silicon dioxide: thickness～1000
Backside laser punctum contact zone: the some contact area is than 0.5～20%, and the some contact degree of depth is 3～5 μ m.
Caustic corrosion is cleaned.
Positive silk screen printing positive electrode, sintering.
The back of the body metal of back side silk screen printing gross area, sintering.
Embodiment 2:
Sheet basic demand: p-type silicon chip, resistivity: 0.5～10 Ω-CM, thickness: 250～400 μ m.
Clean
Matte is made: (1) caustic corrosion (being generally 100 crystal orientation monocrystalline silicon).Corrosion depth 5～15 μ m.
(2) acid corrosion (being generally monocrystalline silicon or polysilicon except that 100 crystal orientation) corrosion depth 5～15 μ m.
(3) clean the HF rinsing
Phosphorous diffusion: square resistance 50～100 Ω-CM
Two sides deposit silicon nitride: PECVD, thickness～1000
Or thermal oxidation silicon dioxide: thickness～1000
Backside laser punctum contact zone: the some contact area is than 0.5～20%, and the some contact degree of depth is 3～5 μ m.
Caustic corrosion is cleaned.
Boron diffusion: square resistance 50～200 Ω-CM
Positive silk screen printing positive electrode, sintering.
The back of the body metal of back side silk screen printing gross area, sintering.
Embodiment 3:
Silicon chip basic demand: p-type silicon chip, resistivity: 0.5～10 Ω-CM, thickness: 250～400 μ m.
Clean
Matte is made: (1) caustic corrosion (being generally 100 crystal orientation monocrystalline silicon).Corrosion depth 5～15 μ m.
(2) acid corrosion (being generally monocrystalline silicon or polysilicon except that 100 crystal orientation) corrosion depth 5～15 μ m.
(3) clean the HF rinsing
Phosphorous diffusion: square resistance 50～100 Ω-CM
Two sides deposit silicon nitride: PECVD, thickness～1000
Or thermal oxidation silicon dioxide: thickness～1000
Positive silk screen printing positive electrode, sintering.
The back of the body metal of back side screen-printed dots contact, sintering.
Back side silk screen printing back of the body metal, low-temperature sintering.
Embodiment 4:
Sheet basic demand: p-type silicon chip, resistivity: 0.5～10 Ω-CM, thickness: 250～400 μ m.
Clean
Matte is made: (1) caustic corrosion (being generally 100 crystal orientation monocrystalline silicon).Corrosion depth 5～15 μ m.
(2) acid corrosion (being generally monocrystalline silicon or polysilicon except that 100 crystal orientation) corrosion depth 5～15 μ m.
(3) clean the HF rinsing
Back side screen-printed dots contact pattern: diffuse source can be solid-solid diffusion sources such as boron aluminium.
Back side solid-solid diffusion: square resistance～100 Ω-CM, junction depth is at number μ m.
Positive phosphorous diffusion: square resistance 50～100 Ω-CM
Two sides deposit silicon nitride: PECVD, thickness～1000
Or thermal oxidation silicon dioxide: thickness～1000
Nitric acid " lift-off ": in based on the corrosive liquid of nitric acid by ultrasonic erosion.
Positive silk screen printing positive electrode, sintering.
The back of the body metal of back side screen-printed dots contact, sintering.
Back side silk screen printing back of the body metal, low-temperature sintering.
Claims (2)
1, a kind of manufacture method of the back point-contact silicon solar cell based on silk-screen printing technique may further comprise the steps:
Silicon chip is selected the P type for use, and resistivity is 0.5～10 ohm-cm, thickness 0.2 μ m～0.4 μ m;
Matte is made and is cleaned;
Phosphorous diffusion forms PN junction;
Plasma etching corrosion edge;
Two sides grown silicon nitride or silicon dioxide;
The back side is made the P of a contact by silk screen printing with the method for solid phase-solid-state diffusion or selective vapor diffusion
+Dense district;
Positive by screen printing electrode and sintering;
Back side gross area adds metal level.
According to the manufacture method of the described back point-contact silicon solar cell based on silk-screen printing technique of claim 1, it is characterized in that 2, described " method with solid phase-solid-state diffusion or selective vapor diffusion is made the P of a contact
+Dense district ", be selected from one of following method:
A. silicon chip is positive through behind the phosphorous diffusion formation PN junction, two sides grown silicon nitride or silicon dioxide, the back side adopts silk screen printing to print silver-colored aluminium paste or other contain the some contact source of the dot matrix of group iii elements, burn silicon nitride or silicon dioxide through high temperature sintering and diffuse into silicon body again and form dense diffusion region and ohmic contact, form metallization through conventional back side all print silver aluminium paste sintering at last;
B. silicon chip is positive through behind the phosphorous diffusion formation PN junction, two sides grown silicon nitride or silicon dioxide; Utilize laser drilling to get the dot matrix zone of back side point contact, form metallization through conventional all print silver aluminium paste sintering diffusion back, the back side again;
C. after laser is made out the array of a contact, this some contact degree of depth is cleaned a some contact hole through caustic corrosion again in the 3-5 mu m range, and the boron diffusion by routine forms dense boron diffusion in a contact hole; Form metallization through conventional back side all print silver aluminium paste sintering at last;
D. Jie Chu concentrated boron area also the technology mode by " lift-off " realize that described " lift-off " technology is meant, the silicon chip back side that utilizes the method for silk screen printing will put the diffuse source seal of contact; Carry out solid-solid diffusion again, diffusion temperature forms concentration and surpasses 10 at 950 ℃ to 1150 ℃
18/ cm
3With the p-type diffusion region of junction depth more than 0.5 μ m; After the some contact at the back side forms, do the passivation layer on positive phosphorous diffusion and two sides again; Utilize the corrosion of nitric acid corrosive liquid, the solid-solid diffusion source of back side point contact is eroded, the passivation layer that is attached on the solid-solid diffusion source also refutes simultaneously, and the some contact holes exposing in the dense district of p-type at the back side is come out; Realize the double-sided metal contact by conventional metallization process then.
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| US20130167915A1 (en) * | 2009-12-09 | 2013-07-04 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers |
| CN101800267B (en) * | 2010-03-12 | 2011-12-28 | 上海太阳能电池研究与发展中心 | Method for preparing back point contact structure of crystalline silicon solar cell |
| CN102005508B (en) * | 2010-10-25 | 2012-02-08 | 湖南大学 | Method for continuously preparing crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film |
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