CN104199173B - A kind of single multiplying power symmetrical expression projection exposure object lens - Google Patents

A kind of single multiplying power symmetrical expression projection exposure object lens Download PDF

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CN104199173B
CN104199173B CN201410479916.XA CN201410479916A CN104199173B CN 104199173 B CN104199173 B CN 104199173B CN 201410479916 A CN201410479916 A CN 201410479916A CN 104199173 B CN104199173 B CN 104199173B
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lens
lens group
group
projection exposure
multiplying power
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CN201410479916.XA
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Chinese (zh)
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CN104199173A (en
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朱咸昌
胡松
赵立新
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Institute of Optics and Electronics of CAS
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Institute of Optics and Electronics of CAS
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Abstract

The invention discloses a kind of single multiplying power symmetrical expression projection exposure object lens, its effect is that the figure on projection mask aligner's mask is transferred on silicon chip after being imaged and replicating.Projection exposure object lens are the core components of litho machine, determine the main performance of litho machine.Single multiplying power projection exposure object lens involved in the present invention are made up of 12 lens, using symmetrical structure.2.5 μm of resolving power of lens, enlargement ratio is 1, exposure field 15mm × 15mm.This projection exposure objective system is made up of first group of lens group, diaphragm, second group of lens group, and the first and second lens groups are symmetrical relative to diaphragm.This projection objective conjugate distance is 500mm, and system architecture is compact；Meanwhile, from the glass material higher to i lines (365nm) transmitance, system optics transmitance is improved, meet the high accuracy and high yield demand of projection mask aligner.

Description

A kind of single multiplying power symmetrical expression projection exposure object lens
Technical field
A kind of single multiplying power projection exposure object lens of the present invention, for based on digital micromirror array (DMD) without mask Projection mask aligner, belongs to microelectronic device and micro processing field.
Background technology
The fast development of the microelectric technique with large scale integrated circuit as core, to microelectronic device and microfabrication skill Art proposes new requirement.The commercialized projection aligner of First, optical projection printing conduct are released from the U.S. in 1978 The application field most wide, Micrometer-Nanometer Processing Technology that technology innovation is fast and vitality is strong, is the core for driving microelectric technique progress.Throw By projection objective imaging be replicated on silicon chip face figure on mask by shadow litho machine.The development of large scale integrated circuit, Ask and increasingly finer lines are accommodated on the chip of larger area, high-precision litho machine demand increasingly increases, the system of mask Making precision turns into the key factor of influence litho machine performance.Maskless photoetching machine based on digital micromirror array (DMD) has nothing The advantages of needing mask, simple structure, low cost and high resolution, is applied to modern micro processing field.Maskless photoetching machine In, the emergent light that DMD is controlled is imaged onto silicon chip surface by projection objective, by completing different knots by the emergent light for controlling DMD The processing and fabricating of structure size.Projection objective is limited by DMD sizes, and its exposure field is smaller but requires compact conformation, projection objective Object-image conjugate away from smaller；And the enlargement ratio design more than projection objective using 1 times or so of low numerical aperture.
At present, for 1 times or so the projection objective of enlargement ratio, to avoid system aberration and reducing system conjugate distance, adopt With transmitting mirror structure design object lens.United States Patent (USP) US7158215 introduces a kind of refraction-reflection type 1×Enlargement ratio photoetching projection objective lens system System, is made up of primary mirror concavees lens, the recessed speculum of secondary mirror and bent moon refractor.United States Patent (USP) US7148953 describes other one Plant 1×The refraction-reflection type photoetching projection objective lens of enlargement ratio, by a refractor group, concave mirror and two prism groups of turning back Into.Speculum is used in projection objective, the bore and conjugate distance of projection objective can be effectively reduced, object lens number is reduced；But reflection Structure especially off-axis formula catoptric arrangement, processing and assembles more difficult.
Full refraction type projection objective is relatively low due to its assembly difficulty, can have larger image side's working distance and change system NA will not cause the advantages such as vignetting to be used widely.Chinese patent CN102200624A describes a kind of projection of 1 times of amplification Lithographic objective.The service band of the objective system is gh lines, is made up of 18 lens altogether, wherein aspherical comprising 4.The projection Objective lens design cost and difficulty of processing are higher.
United States Patent (USP) US2009080086A provides projection objectives of one group of numerical aperture NA by 0.02-0.25.This group projection Exposure object lens use symmetrical structure, and object lens first half and latter half are symmetrical on diaphragm, and enlargement ratio is -1, exposure half Visual field is 50mm.This projection objective system equally has non-spherical lens, and processing and manufacturing difficulty is larger.
Japan Patent JP2002072080A introduces one group and is projected by the aspherical large area for constituting of 32 lens and 4 and exposes Light object lens, system NA is 0.145, and exposure field is 100 × 100mm.The objective lens design and processing cost are equally higher.
In general, 1 for reporting at present×Light projection photoetching objective lens, are used for large-area flat-plate display photoetching.For DMD The imaging demand of lithographic equipment high resolution, shorter conjugate distance, the present invention introduces a kind of light projection photoetching objective lens of symmetrical structure, Meet its imaging design requirement.
The content of the invention
For DMD maskless photoetching machines to the picture matter and system dimension requirement of light projection photoetching objective lens, purport of the present invention One group of projection objective is being designed, high accuracy maskless photoetching machine demand is being met.Present invention aim at using simple lens into Picture, the distortion of synchronous correction system, astigmatism, the curvature of field and aberration etc.；Meanwhile, system conjugate distance is shorter, simple and compact for structure.
The technical solution adopted by the present invention is：A kind of single multiplying power symmetrical expression projection exposure object lens, to reduce mask and silicon chip Due to magnification error and alignment error that change in location causes, and the coaxial alignment of mask and silicon chip is completed, projection optical system It is parallel with optical axis using double telecentric structure, i.e. object lens object space and image space chief ray；It is saturating that projection objective system is divided into front and rear two parts Microscope group I and lens group II, diaphragm are located at the confocal face of lens group I and lens group II；Lens group I and lens group II are relative to diaphragm It is symmetrical, respectively by the first negative lens 1, the first positive lens 2, the second positive lens 3, the 3rd positive lens 4, the and of the 4th positive lens 5 Second negative lens 6 is constituted.
Single times of described projection objective, it is characterised in that：The first negative lens 1 being symmetric is plano-concave negative lens, thing 1st face of mirror system and backmost be plane.
Described single multiplying power projection exposure object lens, it is characterised in that objective system is at least made up of 12 lens：Object lens system System is symmetrical on diaphragm, and system magnification is -1.Specifically, to meet system magnification requirement, lens group I and lens group II meets：
0.992<fI/fII<1.008
Wherein, fIAnd fIIThe respectively focal length of front lens group I and rear lens group II.
Described single multiplying power projection exposure object lens, it is characterised in that：The operation wavelength of objective system is 365 ± 3nm, is selected The material correction system aberration of different dispersion characteristics, specifically：
1), using conventional crown glass, its material property is for the first negative lens 1, the first positive lens 2 and the second positive lens 3：
1.51<ND1~3<1.53
60.16<VD1~3<66.02
Wherein, ND1~3The respectively refractive index of the first negative lens 1, the first positive lens 2 and the second positive lens 3；VD1~3For it Corresponding abbe number；
2) the 3rd positive lens 4 and the 4th positive lens 5 use light crown glass, and its material property is：
1.47<ND4~5<1.49
65.59<VD4~5<70.04
Wherein, ND4~5The respectively refractive index of the 3rd positive lens 4 and the 4th positive lens 5；VD4~5It is its corresponding dispersion system Number；
3) the second negative lens 6 uses light flint, and its material property meets：
1.55<Nd6<1.59
39.18<Vd6<48.76
Wherein, Nd6It is the refractive index of the second negative lens 6；Vd6It is its corresponding abbe number.
Single multiplying power projection exposure object lens, it is characterised in that：Projection objective object-image conjugate is away from being 500mm, i.e. system is total A length of 500mm, compact conformation；Object space and image space working distance are more than 90mm, are that follow-up system structure design reserves enough spaces. To meet system requirements, projection objective structure meets：
fI~II<160
Described single multiplying power projection exposure object lens, it is characterised in that：Numerical aperture of projection objective NA is 0.12, and resolving power is 2.5μm；Exposure field is 15mm × 15mm；The curvature of field is better than ± 5 μm；Distortion is better than ± 0.05 μm, meets litho machine demand.
Present invention advantage compared with prior art is：
(1) using two groups of lens of symmetrical expression, system imaging higher is obtained as matter with less lens.
(2) using conventional optical glass material, production and the assembly cost of optical system are saved.
(3) system architecture is compact, and the object-image conjugate of projection objective is no more than 500mm away from i.e. overall length of system, while having Larger image side's working distance, is that follow-up projection objective is reserved enough with the Interface design of illuminator, mask and silicon chip system Space, meet litho machine and integrally assemble demand.
Brief description of the drawings
Single multiplying power projection exposure object lens specific constructive form of the present invention and as matter characteristic is made into one with drawings forms Step is illustrated：
Fig. 1 is the optical texture schematic diagram of projection exposure object lens of the present invention.
Fig. 2 is the curvature of field (a) and distortion (b) schematic diagram of projection objective system of the present invention.
Fig. 3 is projection objective aberration curve schematic diagram of the present invention.
Fig. 4 is projection objective wave aberration schematic diagram of the present invention.
Fig. 5 is the object space and image space telecentricity schematic diagram of projection objective of the present invention.
MTF curve when Fig. 6 is projection objective defocus ± 10 μm of the present invention.
Specific embodiment
The present invention is intended to provide a kind of single multiplying power projection exposure object lens, for i Lithography machines.With reference to accompanying drawing to of the invention Specific implementation measure elaborates.
According to the requirement of high accuracy projection mask aligner, projection objective optical specifications of the present invention are as follows：
● operation wavelength：365±3nm
● resolving power：2.5μm
● numerical aperture NA：0.12
● enlargement ratio：1×
● exposure field：15mm×15mm
● object-image conjugate away from：Less than 500mm
● object space working distance：More than 90mm
● image space working distance：More than 90mm
Projection objective of the present invention uses double telecentric structure, and objective system is made up of 12 lens.It is of the present invention It is that projection objective structure is as shown in Figure 1.Projection objective system is divided into front and rear two parts lens group I and lens group II, and diaphragm is located at The confocal face of lens group I and II；Lens group I and lens group II are symmetrical relative to diaphragm, respectively by the first negative lens 1, One positive lens 2, the second positive lens 3, the 3rd positive lens 4, the 4th positive lens 5 and the second negative lens 6 are constituted.
Single times of described projection objective, it is characterised in that：The first negative lens 1 being symmetric is plano-concave negative lens, thing 1st face of mirror system and backmost be plane.
Described single multiplying power projection exposure object lens, it is characterised in that objective system is at least made up of 12 lens：Object lens system System is symmetrical on diaphragm, and system magnification is -1.Specifically, to meet system magnification requirement, lens group I and lens group II meets：
0.992<fI/fII<1.008
Wherein, fIAnd fIIThe respectively focal length of front lens group I and rear lens group II.
Described single multiplying power projection exposure object lens, it is characterised in that：The operation wavelength of objective system is 365 ± 3nm, is selected The material correction system aberration of different dispersion characteristics, specifically：
1), using conventional crown glass, its material property is for the first negative lens 1, the first positive lens 2 and the second positive lens 3：
1.51<ND1~3<1.53
60.16<VD1~3<66.02
Wherein, ND1~3The respectively refractive index of the first negative lens 1, the first positive lens 2 and the second positive lens 3；VD1~3For it Corresponding abbe number；
2) the 3rd positive lens 4 and the 4th positive lens 5 use light crown glass, and its material property is：
1.47<ND4~5<1.49
65.59<VD4~5<70.04
Wherein, ND4~5The respectively refractive index of the 3rd positive lens 4 and the 4th positive lens 5；VD4~5It is its corresponding dispersion system Number；
3) the second negative lens 6 uses light flint, and its material property meets：
1.55<Nd6<1.59
39.18<Vd6<48.76
Wherein, Nd6It is the refractive index of the second negative lens 6；Vd6It is its corresponding abbe number.
Single multiplying power projection exposure object lens, it is characterised in that：Projection objective object-image conjugate is away from being 500mm, i.e. system is total A length of 500mm, compact conformation；Object space and image space working distance are more than 90mm, are that follow-up system structure design reserves enough spaces. To meet system requirements, projection objective structure meets：
fI~II<160
Specifically, the aberration of system is corrected simultaneously to ensure system transmitance, projection objective is by the symmetrical He of front lens group I Rear lens group II is constituted：Plano-concave negative lens 1, biconvex positive lens 2 and biconvex positive lens 3 are from crown glass K9；The He of biconvex positive lens 4 Biconvex positive lens 5 select light crown glass QK3；Double-concave negative lens 6 are from light flint QF5.Design result is as shown in Table 1：
Form 1
Sequence number Face type Radius Thickness Material Semi-Diameter
0 Sphere inf 90.610 10.90179868
1 Sphere inf 18.734 H-K9L 21.33118368
2 Sphere 118.7065 3.736 22.89751294
3 Sphere 168.2492 24.380 H-K9L 23.62776011
4 Sphere -158.8027 24.587 25.58927879
5 Sphere 429.3494 4.834 H-K9L 27.20528838
6 Sphere -383.5791 12.160 27.25301305
7 Sphere 50.5601 11.183 H-QK3 26.96430223
8 Sphere -885.0077 0.561 26.32946373
9 Sphere 61.6790 11.109 H-QK3 24.27606136
10 Sphere -3458.7982 6.850 22.01417182
11 Sphere -130.0322 10.037 QF5 18.5207723
12 Sphere 30.2201 29.951 14.4171144
13 Sphere inf 29.360 11.30236898
14 Sphere -30.2201 10.037 QF5 14.39350729
15 Sphere 130.0322 6.866 18.50343997
16 Sphere 3458.7982 11.109 H-QK3 22.01707089
17 Sphere -61.6790 0.519 24.28260421
18 Sphere 885.0077 11.183 H-QK3 26.32868237
19 Sphere -50.5601 11.424 26.96532693
20 Sphere 383.5791 4.834 H-K9L 27.26422858
21 Sphere -429.3494 28.284 27.2184608
22 Sphere 158.8027 24.380 H-K9L 25.4175202
23 Sphere -168.2492 3.226 23.4725147
24 Sphere -118.7065 18.734 H-K9L 22.86945558
25 Sphere inf 91.312 21.33003074
26 Sphere inf 0.000 11.00248682
The curvature of field and distortion of the Fig. 2 for projection objective system, show the curvature of field of the projection objective system better than ± 5 μm, distortion Better than 0.02 μm.
The wave aberration curve shown in projection objective aberration curve and Fig. 4 shown in Fig. 3 shows, projection objective system have compared with Good picture matter, wave aberration is better than ± 0.25 λ.
Projection objective object space and image space telecentricity shown in Fig. 5 are better than 0.5 °, in meeting litho machine alignment and alignment procedures Error requirement.
MTF curve shown in Fig. 6 shows that during defocus ± 10 μm MTF >=0.4 of objective system, and system has preferable picture Matter.
Generally, single multiplying power projection exposure object lens of the present invention, with picture matter higher.It is comprehensive in design process Optimize the aberrations such as multiplying power, aberration, the curvature of field, distortion and the wave aberration of projection objective, meet high accuracy litho machine demand.Institute of the present invention The design example of detailed description is merely to illustrate advantage of the invention and reasonability, all optimization designs based on technical solution of the present invention Projection objective example belong to scope of the invention.The technology and principle that the present invention is not elaborated belong to people from field of the present invention Technology well known to member.

Claims (5)

1. a kind of single multiplying power symmetrical expression projection exposure object lens, it is characterised in that：The projection exposure object lens use double telecentric structure, i.e., Object lens object space and image space chief ray are parallel with optical axis；Projection objective system is divided into front and rear two parts lens group I and lens group II, light Door screen is positioned at lens group I and the confocal face of lens group II；Lens group I and lens group II are symmetrical relative to diaphragm, the He of lens group I Lens group II is successively by the first negative lens (1), the first positive lens (2), the second positive lens (3), the 3rd positive lens (4), the 4th Positive lens (5) and the second negative lens (6) are constituted.
2. single multiplying power symmetrical expression projection exposure object lens according to claim 1, it is characterised in that：First for being symmetric Negative lens (1) is plano-concave negative lens, the 1st face of objective system and be backmost plane.
3. single multiplying power symmetrical expression projection exposure object lens according to claim 1, it is characterised in that：Lens group I and lens group The objective system of II composition is at least made up of 12 lens：Lens group I and lens group II are symmetrical on diaphragm, lens group I and thoroughly The system magnification of the composition of microscope group II is -1, specifically, to meet system magnification requirement, lens group I and lens group II Meet：
0.992<fI/fII<1.008
Wherein, fIAnd fIIThe respectively focal length of lens group I and lens group II.
4. single multiplying power symmetrical expression projection exposure object lens according to claim 1, it is characterised in that：Lens group I and lens group The operation wavelength of the objective system of II composition is 365 ± 3nm, and the material from different dispersion characteristics corrects system aberration, specifically 's：
1) the first negative lens (1), the first positive lens (2) and the second positive lens (3) are using conventional crown glass, its material property For：
1.51<ND1~3<1.53
60.16<VD1~3<66.02
Wherein, ND1~3The refractive index of respectively the first negative lens (1), the first positive lens (2) and the second positive lens (3)；VD1~3For Its corresponding abbe number；
2) the 3rd positive lens (4) and the 4th positive lens (5) use light crown glass, and its material property is：
1.47<ND4~5<1.49
65.59<VD4~5<70.04
Wherein, ND4~5The respectively refractive index of the 3rd positive lens (4) and the 4th positive lens (5)；VD4~5It is its corresponding dispersion system Number；
3) the second negative lens (6) uses light flint, and its material property meets：
1.55<Nd6<1.59
39.18<Vd6<48.76
Wherein, Nd6It is the refractive index of the second negative lens (6)；Vd6It is its corresponding abbe number.
5. single multiplying power symmetrical expression projection exposure object lens according to claim 1, it is characterised in that：Numerical aperture of projection objective NA is 0.12, and resolving power is 2.5 μm；Exposure field is 15mm × 15mm；The curvature of field is better than ± 5 μm；Distortion is better than ± 0.05 μm, completely Sufficient litho machine demand.
CN201410479916.XA 2014-09-19 2014-09-19 A kind of single multiplying power symmetrical expression projection exposure object lens Expired - Fee Related CN104199173B (en)

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CN105259740A (en) * 2015-12-01 2016-01-20 中国科学院光电技术研究所 Haploid double telecentric photoetching projection lens for photoetching system
CN109387921B (en) * 2017-08-11 2024-06-18 宁波舜宇光电信息有限公司 Optical lens, camera module and assembling method thereof
CN109656102B (en) * 2018-12-17 2021-06-25 德淮半导体有限公司 Photoetching efficiency adjusting method, device, server and computer readable storage medium
CN112415865B (en) * 2020-12-01 2023-11-17 中国科学院光电技术研究所 Single-magnification large-view-field projection exposure objective lens applied to projection lithography machine
CN113607664A (en) * 2021-07-14 2021-11-05 天津大学 Spectrum type electroplating solution concentration detection method based on symmetrical transceiver group
CN113568281B (en) * 2021-07-29 2023-10-03 中国科学院光电技术研究所 Large-view-field projection exposure objective lens system applied to projection lithography machine
CN114859515B (en) * 2022-05-23 2024-01-12 张家港中贺自动化科技有限公司 Catadioptric objective optical system for projection lithography and projection lithography system

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JP2002287029A (en) * 2001-03-28 2002-10-03 Fuji Photo Optical Co Ltd Projection optical system and projection aligner using the same
JP5424017B2 (en) * 2008-12-12 2014-02-26 株式会社目白プレシジョン Projection optical system
CN102645749B (en) * 2012-04-21 2013-10-16 张家港鹏博光电科技有限公司 Magnification regulating method of projection optical system

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