CN103105666A - Exposure projection objective lens - Google Patents

Exposure projection objective lens Download PDF

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Publication number
CN103105666A
CN103105666A CN2011103535940A CN201110353594A CN103105666A CN 103105666 A CN103105666 A CN 103105666A CN 2011103535940 A CN2011103535940 A CN 2011103535940A CN 201110353594 A CN201110353594 A CN 201110353594A CN 103105666 A CN103105666 A CN 103105666A
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lens
lens combination
combination
exposure projections
focal length
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CN2011103535940A
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CN103105666B (en
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武珩
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Abstract

The invention provides an exposure projection objective lens. Masking images are focused and imaged on a silicon slice, a first lens assembly G11 with positive focus power, a second lens assembly G12 with negative focus power, a third lens assembly G13 with positive focus power, a fourth lens assembly G14 with positive focus power and a fifth lens assembly G15 with positive focus power are arranged on the exposure projection objective lens in sequence from the marking along an optical axis, wherein an aperture diaphragm AS is contained in the fourth lens assembly G14. Each lens assembly satisfies the following relation: -0.3<fG12/fG11<-0.1; -0.6<fG12/fG13<-0.3; 0.1<fG13/fG14<0.4; and 0.25<fG15/fG14<0.45; wherein the fG11 is the focal length of the first lens assembly G11, the fG12 is the focal length of the second lens assembly G12, the fG13 is the focal length of the third lens assembly G13, the fG14 is the focal length of the fourth lens assembly G14, and the fG15 is the focal length of the fifth lens assembly G15.

Description

A kind of exposure projections object lens
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate to particularly a kind of exposure projections object lens for lithographic equipment.
Background technology
The medium and small substrate field of lithography of sub-micron, adopt bulk-micromachining and surface silicon micro fabrication at present, produced some new application, as: magnetic head, printing head, the devices such as accelerometer.The lithographic projection system is in the application in this field, guaranteeing imaging performance simultaneously, need to control cost and is that overall design offers convenience.
The medium and small substrate field of lithography of sub-micron, the exposure projections object lens of medium visual field (10mm＜half field-of-view＜20mm), medium numerical aperture NA(0.2＜NA＜0.5) are most widely used.
US Patent No. 4871237 discloses a kind of I line (365nm) design projection objective, as number formulary value aperture NA0.35, and image space maximum height 16mm, 0.1 times of enlargement ratio, eyeglass add up to 17 eyeglasses.
US Patent No. 4891663 discloses 248nm design projection objective, as number formulary value aperture NA0.3, and image space maximum height 5.3mm, 0.2 times of enlargement ratio, 11 eyeglasses of eyeglass sum.The common feature of above-mentioned patent is medium visual field, medium numerical aperture NA lithographic objective, and structure is relatively simple, and eyeglass quantity is controlled at below 20.
US Patent No. 5808814 discloses the object space heart design far away of 0.25 times of enlargement ratio, adopts the 248nm light source design, and eyeglass quantity is controlled at 20.
Above-mentioned three pieces of patents all can not satisfy the non-heart far away of object space simultaneously, and two requirements of (g line or h line or i line) mercury lamp spectrum design.The design that object space does not satisfy the heart far away can cause the adjustment precision of mask is proposed very high demand, and does not use relatively high (g line or h line or the i line) mercury lamp light source of energy, can not satisfy the exposure dose demand of medium and small substrate photoetching.
According to above analysis and actual demand, need to design a kind of medium visual field, medium numerical aperture NA lithographic objective, satisfy object space heart demand far away, to reduce, mask stage is adjusted accuracy requirement; Use simultaneously the spectrum design of mercury lamp wave band, satisfy the exposure dose demand.And g line, h line or i line in comparison mercury lamp spectrum use the design of i line more useful to improving resolution.As long as the bandwidth of i line is enough wide, also can satisfy the demand of exposure dose.
Summary of the invention
The object of the invention is to propose a kind of i line projection objective lens design, realize object space, as the two hearts designs far away in side, satisfy actual product demand; Have simultaneously medium visual field and numerical aperture, control the aberrations such as the curvature of field, astigmatism, distortion, aberration, guarantee final good image quality.
The present invention proposes a kind of exposure projections object lens, and the image focal imaging of mask on silicon chip, is begun to comprise successively along optical axis from mask:
One has the first lens group G11 of positive light coke;
One has the second lens combination G12 of negative power;
One has the 3rd lens combination G13 of positive light coke;
One has the 4th lens combination G14 of positive light coke; Comprise an aperture diaphragm AS in described the 4th lens combination G14; And
One has the 5th lens combination G15 of positive light coke;
Wherein, described each lens combination satisfies following relation:
-0.3 <f G12/ f G11< -0.1
-0.6<f G12/ f G13< -0.3
0.1<f G13/ f G14<0.4
0.25<f G15/ f G14<0.45
Wherein: f G11: the focal length of described first lens group G11; f G12: the focal length of described the second lens combination G12; f G13: the focal length of described the 3rd lens combination G13; f G14: the focal length of described the 4th lens combination G14; f G15: the focal length of described the 5th lens combination G15.
More preferably, described first lens group G11 is made of at least two lens; Described the second lens combination G12 is made of at least three lens; Described the 3rd lens combination G13 is made of at least four lens; Described the 4th lens combination G14 is made of at least five lens; Described the 5th lens combination G15 is made of at least two lens; Wherein, comprise at least two lens pair in described the 4th lens combination G14, described lens are to comprising a positive lens and a negative lens.
More preferably, described optical system is made of at least two kinds low chromatic dispersion materials and at least a high chromatic dispersion material, and wherein low chromatic dispersion material refers to Abbe number less than 50 material, and high chromatic dispersion material refers to that Abbe number is greater than 50 material; And wherein the second lens combination G12 and the 4th lens combination G14 comprise the low chromatic dispersion material of a slice and the high chromatic dispersion material of a slice at least at least.
More preferably, described the second lens combination G12 and the 4th lens combination G14 comprise at least a negative lens and satisfy following condition:
|f G12_e/ L|<0.15
|f G14_e/ L|<0.15
Wherein: L: the distance of described optical lens from the object plane to image planes; f G12_e: the focal length of a negative lens in the second lens combination G12; f G14_e: the focal length of a negative lens in the 4th lens combination G14.
Wherein, the object space operating distance of described exposure projections object lens is greater than 100mm.More preferably, the object space operating distance of described exposure projections object lens is greater than 150mm.More preferably, described exposure projections object lens object space operating distance is greater than 180mm.
Wherein, the halfwidth of described exposure projections object lens is not less than 2.5nm.More preferably, the halfwidth of optical system is not less than 3nm.
Wherein, the object space of described exposure projections object lens and the picture side heart far away is all less than 5mrad.More preferably, the object space heart far away is less than 2mrad, as Fang Yuanxin less than 5mrad.
Wherein, described exposure projections object lens use the i line source.
The present invention proposes i line projection objective lens design has realized object space, as the two hearts designs far away in side, satisfies actual product demand; Have simultaneously medium visual field and numerical aperture, control the aberrations such as the curvature of field, astigmatism, distortion, aberration, guarantee final good image quality.
Description of drawings
Can be by following detailed Description Of The Invention and appended graphic being further understood about the advantages and spirit of the present invention.
Fig. 1 is projection objective structural representation of the present invention;
Fig. 2 is projection objective astigmatism of the present invention, distortion figure;
Fig. 3 is projection objective object space of the present invention and picture side's correction chart;
Fig. 4 is projection objective phase dygoram of the present invention.
Embodiment
Describe specific embodiments of the invention in detail below in conjunction with accompanying drawing.
Fig. 1 is projection objective structural representation of the present invention.In exposure projections object lens 10 of the present invention, each optical component parameter requires as shown in table 1.
Table 1
Operation wavelength I line (halfwidth 3nm)
The image space height 11.7mm
Picture number formulary value aperture NA 0.32
Enlargement ratio -0.2
As shown in Figure 1, projection objective 10 is comprised of 16 lens, and 16 lens are all sphere.
It is five lens combination G11, G12, G13, G14, G15 that projection objective 10 is divided into, and that focal power is followed successively by is positive and negative, just, just, just.
First lens group G11 is made of two lens, and focal power just is.The second lens combination G12 is made of three lens, and focal power is negative.The 3rd lens combination G13 is made of four lens, and focal power just is.The 4th lens combination G14 is made of five lens, and it is negative, negative, positive, positive and negative that focal power is followed successively by, and wherein comprises aperture diaphragm AS between two positive negative lens centerings.The 5th lens combination G15 is made of two lens, and focal power just is.
In the present embodiment, optical system is made of at least two kinds low chromatic dispersion materials and at least a high chromatic dispersion material: wherein low chromatic dispersion material refers to Abbe number less than 50 material, and high chromatic dispersion material refers to that Abbe number is greater than 50 material.
Wherein, first lens group G11 is made of two lens 11,12. Lens 11,12 consist of by high chromatic dispersion material.The second lens combination G12 is made of three lens 13,14,15.Lens 13 are bent moon formula lens, and concave surface bends towards image planes, and lens 14,15 are concave-concave formula negative lens.Lens 13 are made of low chromatic dispersion material, and lens 14,15 are made of high chromatic dispersion material.The 3rd lens combination G13 is made of four lens 16,17,18,19, and lens 16,17,18,19 are low chromatic dispersion material and consist of.The 4th lens combination G14 is made of five lens 20,21,22,23,24, diaphragm AS between lens 22 and 23, namely two positive negative lenses between.Lens 20 are bent moon formula lens, and its concave surface bends towards the diaphragm face, and lens 20,21,24 are made of high chromatic dispersion material, and lens 22,23 are made of low chromatic dispersion material.The 5th lens combination G15 is made of two lens 25,26, and is made of low chromatic dispersion material.
Satisfy following relational expression between lens combination G11, G12, G13, G14, G15, further established the basis that the object lens picture element is optimized.
-0.3 <f G12/ f G11< -0.1 (1)
-0.6<f G12/ f G13< -0.3 (2)
0.1<f G13/ f G14<0.4 (3)
0.25<f G15/ f G14<0.45 (4)
The face sequence number Radius Thickness Refractive index (365nm)
OBJECT 186.7251
1 1721.126 22.0203 1.5792
2 -234.158 0.7
3 140.221 30 1.5792
4 255.778 47.30707
5 94.775 30 1.504046
6 61.282 21.55515
7 -139.646 20 1.5792
8 89.794 64.4723
9 -85.981 24.03675 1.5792
10 280.262 16.95588
11 -395.964 22.55922 1.504046
12 -132.899 0.7
13 623.503 32.71696 1.504046
14 -112.838 0.7
15 255.041 20 1.504046
16 -1068.192 0.7
17 141.827 20 1.504046
18 320.448 15.9675
19 114.037 20.79153 1.5792
20 69.239 26.53579
21 -93.732 21.24022 1.5792
22 148.940 11.80966
23 206.244 21.61222 1.535742
24 -105.323 3.28312
25（Stop） INF 24.41952
26 214.557 20 1.535742
27 -149.131 6.290302
28 -162.057 20 1.5792
29 -640.351 38.63812
30 178.305 26.0401 1.504046
31 -973.916 22.73399
32 76.482 21.61514 1.504046
IMAGE 215.347 38
Wherein: f G11: the focal length of first lens group G11; f G12: the focal length of the second lens combination G12; f G13: the focal length of the 3rd lens combination G13; f G14: the focal length of the 4th lens combination G14; f G15: the focal length of the 5th lens combination G15.
Respectively comprise at least one negative lens in the second lens combination G12 and the 4th lens combination G14, and satisfy:
|f G12_e/ L|<0.15 (5)
|f G14_e/ L|<0.15 (6)
Wherein, L: the distance from the object plane to image planes; f G12_e: the focal length of the negative lens of focal power maximum in the second lens combination G12; f G14_e: the focal length of the negative lens of focal power maximum in the 4th lens combination G14.
(1) – (6) has defined the structural relation of lens combination G11, G12, G13, G14, G15 and lens correction aberration to relational expression.
Table 2 has provided the specific design value of the projection objective of this example, and positive radius value represents the center of curvature on the right on surface, and negative radius value represents that the center of curvature is on the left side on surface.Interval between optical element thickness or two optical elements is distance to the axle on next surface.All dimensional units are all millimeters.
In table 2, " S# " presentation surface numbering, " STOP " expression aperture diaphragm AS, in the radius item, " INF " represents infinitely great.
Table 2
Fig. 2 is projection objective astigmatism of the present invention, distortion figure.Diagram shows the present embodiment optical system astigmatism, distortion well.
Fig. 3 is projection objective object space of the present invention and picture side's correction chart.Illustrate the object space that the shows the present embodiment heart far away and proofread and correct in the 5mrad left and right, proofread and correct in the 2mrad left and right as Fang Yuanxin.
Fig. 4 is projection objective phase dygoram of the present invention.Diagram shows that the present embodiment ray aberration curve shows that the picture element correction situation of the present embodiment is better.
Described in this instructions is preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.

Claims (12)

1. exposure projections object lens on silicon chip, begin the image focal imaging of mask to comprise successively along optical axis from mask:
One has the first lens group G11 of positive light coke;
One has the second lens combination G12 of negative power;
One has the 3rd lens combination G13 of positive light coke;
One has the 4th lens combination G14 of positive light coke; Comprise an aperture diaphragm AS in described the 4th lens combination G14; And
One has the 5th lens combination G15 of positive light coke;
Wherein, described each lens combination satisfies following relation:
-0.3 <f G12/ f G11< -0.1
-0.6<f G12/f G13< -0.3
0.1<f G13/f G14<0.4
0.25<f G15/ f G14<0.45
Wherein: f G11: the focal length of described first lens group G11; f G12: the focal length of described the second lens combination G12; f G13: the focal length of described the 3rd lens combination G13; f G14: the focal length of described the 4th lens combination G14; f G15: the focal length of described the 5th lens combination G15.
2. exposure projections object lens as claimed in claim 1 is characterized in that:
Described first lens group G11 is made of at least two lens;
Described the second lens combination G12 is made of at least three lens;
Described the 3rd lens combination G13 is made of at least four lens;
Described the 4th lens combination G14 is made of at least five lens;
Described the 5th lens combination G15 is made of at least two lens;
Wherein, comprise at least two lens pair in described the 4th lens combination G14, described lens are to comprising a positive lens and a negative lens.
3. exposure projections object lens as claimed in claim 2, it is characterized in that described optical system is made of at least two kinds low chromatic dispersion materials and at least a high chromatic dispersion material, wherein said low chromatic dispersion material refers to Abbe number less than 50 material, and described high chromatic dispersion material refers to that Abbe number is greater than 50 material; And wherein said the second lens combination G12 and described the 4th lens combination G14 comprise the low chromatic dispersion material of a slice and the high chromatic dispersion material of a slice at least at least.
4. exposure projections object lens as claimed in claim 3 is characterized in that described the second lens combination G12 and the 4th lens combination G14 comprise a negative lens at least, satisfy following condition:
|f G12_e/L|<0.15
|f G14_e/ L|<0.15
Wherein: L: the distance of described optical lens from the object plane to image planes; f G12_e: the focal length of a negative lens in described the second lens combination G12; f G14_e: the focal length of a negative lens in described the 4th lens combination G14.
5. exposure projections object lens as claimed in claim 4, is characterized in that the object space operating distance of described exposure projections object lens is greater than 100mm.
6. exposure projections object lens as claimed in claim 4, is characterized in that the object space operating distance of described exposure projections object lens is greater than 150mm.
7. exposure projections object lens as claimed in claim 4, is characterized in that the object space operating distance of described exposure projections object lens is greater than 180mm.
8. exposure projections object lens as claimed in claim 4, is characterized in that the halfwidth of described exposure projections object lens is not less than 2.5nm.
9. exposure projections object lens as claimed in claim 4, is characterized in that the halfwidth of described exposure projections object lens is not less than 3nm.
10. exposure projections object lens as claimed in claim 4, is characterized in that object space and the picture side heart far away of described exposure projections object lens is all less than 5mrad.
11. exposure projections object lens as claimed in claim 4 is characterized in that the object space heart far away of described exposure projections object lens less than 2mrad, as Fang Yuanxin less than 5 mrad.
12. light projection photoetching objective lens as claimed in claim 4 is characterized in that described exposure projections object lens use the i line source.
CN201110353594.0A 2011-11-10 2011-11-10 Exposure projection objective lens Active CN103105666B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103278912A (en) * 2013-06-19 2013-09-04 中国科学院光电技术研究所 Reflective type ultra-violet lithography objective lens
CN104062748A (en) * 2014-07-17 2014-09-24 张家港中贺自动化科技有限公司 Multiplying power adjustment method of wide spectral line projection optical system
CN104950427A (en) * 2015-07-02 2015-09-30 中国科学院光电技术研究所 Large-field-of-view and full-spherical-surface type mask aligner projection objective with high numerical aperture
CN111929806A (en) * 2019-08-15 2020-11-13 上海微电子装备（集团）股份有限公司 Photoetching projection objective and photoetching machine

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09222559A (en) * 1996-02-15 1997-08-26 Casio Comput Co Ltd Photographic lens
JP3298581B2 (en) * 1990-10-22 2002-07-02 株式会社ニコン Projection system and projection exposure method
CN1417610A (en) * 2001-11-05 2003-05-14 尼康株式会社 Projection optical system, explosure device and making process of equipment
JP2005189850A (en) * 2003-12-15 2005-07-14 Carl Zeiss Smt Ag Refractive projection objective lens for immersion lithography
US20100085550A1 (en) * 2008-10-07 2010-04-08 Canon Kabushiki Kaisha Projection optical system and exposure apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3298581B2 (en) * 1990-10-22 2002-07-02 株式会社ニコン Projection system and projection exposure method
JPH09222559A (en) * 1996-02-15 1997-08-26 Casio Comput Co Ltd Photographic lens
CN1417610A (en) * 2001-11-05 2003-05-14 尼康株式会社 Projection optical system, explosure device and making process of equipment
JP2005189850A (en) * 2003-12-15 2005-07-14 Carl Zeiss Smt Ag Refractive projection objective lens for immersion lithography
US20100085550A1 (en) * 2008-10-07 2010-04-08 Canon Kabushiki Kaisha Projection optical system and exposure apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103278912A (en) * 2013-06-19 2013-09-04 中国科学院光电技术研究所 Reflective type ultra-violet lithography objective lens
CN103278912B (en) * 2013-06-19 2015-07-08 中国科学院光电技术研究所 Reflective type ultra-violet lithography objective lens
CN104062748A (en) * 2014-07-17 2014-09-24 张家港中贺自动化科技有限公司 Multiplying power adjustment method of wide spectral line projection optical system
CN104062748B (en) * 2014-07-17 2016-04-13 张家港中贺自动化科技有限公司 A kind of multiplying power control method of wide spectrum projection optical system
CN104950427A (en) * 2015-07-02 2015-09-30 中国科学院光电技术研究所 Large-field-of-view and full-spherical-surface type mask aligner projection objective with high numerical aperture
CN104950427B (en) * 2015-07-02 2017-06-13 中国科学院光电技术研究所 A kind of big visual field high-NA whole world face projection lens of lithography machine
CN111929806A (en) * 2019-08-15 2020-11-13 上海微电子装备（集团）股份有限公司 Photoetching projection objective and photoetching machine

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