CN104183648B - 一种薄膜晶体管及其制作方法、阵列基板和显示装置 - Google Patents
一种薄膜晶体管及其制作方法、阵列基板和显示装置 Download PDFInfo
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Abstract
本发明的实施例提供一种薄膜晶体管及其制作方法、阵列基板和显示装置,涉及薄膜晶体管技术领域,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,出现源漏极的沟道处的有源层断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。该薄膜晶体管包括:栅极和栅绝缘层,其中,栅绝缘层上与所述栅极对应的位置处设置有凹槽。本发明应用于显示技术领域中。
Description
技术领域
本发明涉及薄膜晶体管技术领域,尤其涉及一种薄膜晶体管及其制作方法、阵列基板和显示装置。
背景技术
现有技术方案中的有机薄膜晶体管器件的显示面板的结构中,阵列基板上的有机半导体层并不是形成在完全平整的平面上,往往是形成在有段差的其它层上面。源漏极上面或者下面及之间设置有机半导体层,保证在开态时源极和漏极可以正常导通。
由于现有技术方案中的源极和漏极图案与栅绝缘层之间均存在段差且不在同一界面,因此在形成有机半导体层时,半导体材料在源漏电极和栅绝缘层上的铺展行为不同,形成的膜厚度不一样,膜厚比较难控制,容易出现有机半导体层断线的问题,甚至会导致源漏电极无法正常导通。
发明内容
本发明的实施例提供一种薄膜晶体管及其制作方法、阵列基板和显示装置,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,形成的有源层出现断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。
为达到上述目的,本发明的实施例采用如下技术方案:
第一方面,提供一种薄膜晶体管,所述薄膜晶体管为栅极底接触型,所述薄膜晶体管包括:栅极和栅绝缘层,其中:
所述栅绝缘层上与所述栅极对应的位置处设置有凹槽。
可选的,所述薄膜晶体管还包括源极和漏极,其中:
所述源极和漏极的部分图案形成在所述栅绝缘层上,与所述栅绝缘层上的凹槽对应的位置处。
可选的,所述薄膜晶体管还包括:有源层,其中:
所述有源层形成在所述栅绝缘层上,与所述栅绝缘层上的凹槽对应的位置处。
可选的,所述栅绝缘层上的凹槽的宽度大于或者等于所述栅极的宽度。
可选的,所述栅绝缘层上的凹槽的高度大于所述有源层的厚度。
可选的,所述有源层的材料为有机半导体材料。
第二方面,提供一种阵列基板,所述阵列基板包括第一方面所述的薄膜晶体管。
第三方面,提供一种显示装置,所述显示装置包括第二方面所述的阵列基板。
第四方面,提供一种薄膜晶体管的制作方法,所述方法包括:形成包括栅极、栅线和栅线引线的栅金属层,还包括:
在所述栅金属层上形成一层在与所述栅极对应的位置处设置有凹槽的栅绝缘层。
可选的,所述方法还包括:
在所述栅绝缘层上与所述栅绝缘层上的凹槽对应的位置处形成源极和漏极的部分图案。
可选的,所述方法还包括:
在所述栅绝缘层上与所述栅绝缘层上的凹槽对应的位置处形成一层有源层。
可选的,所述栅绝缘层上的凹槽的宽度大于或者等于所述栅极的宽度。
可选的,所述栅绝缘层上的凹槽的高度大于或者等于所述有源层的厚度。
本发明的实施例提供的薄膜晶体管及其制作方法、阵列基板和显示装置,通过在薄膜晶体管的栅绝缘层上与栅极对应的位置处设置凹槽,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和栅绝缘层上的膜厚不易控制,形成的有源层出现断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明的实施例提供的一种薄膜晶体管的结构示意图;
图2为本发明的实施例提供的另一种薄膜晶体管的结构示意图;
图3为本发明的实施例提供的又一种薄膜晶体管的结构示意图;
图4为本发明的实施例提供的一种薄膜晶体管的制作方法的流程示意图;
图5为本发明的实施例提供的另一种薄膜晶体管的制作方法的流程示意图;
图6为本发明的实施例提供的又一种薄膜晶体管的制作方法的流程示意图。
附图标记:1-基板;2-栅极;3-栅绝缘层;4-栅绝缘层上的凹槽;5-源极;6-漏极;7-有源层。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明的实施例提供一种薄膜晶体管,该薄膜晶体管可以是栅极底接触类型,参照图1所示,该薄膜晶体管包括:基板1、栅极2和栅绝缘层3,其中:
栅绝缘层3上与栅极2对应的位置处设置有凹槽4。
具体的,栅绝缘层上栅极对应位置处的凹槽可以是在制作栅绝缘层时,使用掩膜板,采用曝光、显影、刻蚀通过一次构图工艺形成的。其中,基板可以是玻璃基板、塑料基板或者不锈钢与绝缘薄膜的衬底等。
本实施例中,栅绝缘层可以是使用光敏有机材料形成的,栅绝缘层的厚度可以为200~500nm纳米。栅极可以是采用金属、氧化铟锡(Indium Tin Oxide,简称ITO)或者有机导电物材料形成的,栅极的厚度可以为60~300nm。
本发明的实施例提供的薄膜晶体管,通过在薄膜晶体管的栅绝缘层上与栅极对应的位置处设置凹槽,使得有源层可以设置于与栅绝缘层上的凹槽对应的位置处,这样可以有利于更好的形成有源层、源极和漏极,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,出现源漏极的沟道处的有源层断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。
进一步,参照图2所示,该薄膜晶体管还包括:源极5和漏极6,其中:
源极5和漏极6的部分图案形成在栅绝缘层3上,与栅绝缘层3上的凹槽4对应的位置处。
其中,源极和漏极可以采用金属例如:金Au、银Ag、钼Mo、铝Al、铜Cu等、ITO、氧化物或者导电高分子材料等制作形成,一般源漏极的厚度为60~300nm。
进一步,参照图3所示,该薄膜晶体管还包括:有源层7,其中:
有源层7形成在栅绝缘层3上,与栅绝缘层3上的凹槽4对应的位置处。
其中,有源层的材料可以为有机半导体材料。
具体的,本实施例中的有源层可以是采用溶液法制备形成的,形成有源层的材料可以是溶液法制备的有机材料;一般有源层的厚度可以为40~200nm,本实施例中优选40~100nm。本实施例中可以采用溶液旋涂法来制作有源层。
其中,栅绝缘层上的凹槽4的宽度大于或者等于栅极2的宽度。
栅绝缘层上的凹槽4的高度大于或者等于有源层7的厚度。
具体的,制作栅绝缘层上的凹槽的宽度大于等于栅极的宽度、凹槽的高度大于或者等于有源层的厚度,可以保证后续制作源极和漏极时,源极和漏极的部分图案可以位于与栅绝缘层上的凹槽对应的位置处,同时可以使得有源层整个设置在于凹槽对应的位置处,这样制作过程中有利于形成源极和漏极的材料流到凹槽中有益于形成源极和漏极,同时,制作有源层时由于有源层设置在凹槽中这样涂敷有源层的材料时,可以很好的控制膜厚,避免有源层上出现断线的问题,保证有源层实现连通源漏极的功能,有效的避免了对生产材料的浪费,降低了生产成本。
本发明的实施例提供的薄膜晶体管,通过在薄膜晶体管的栅绝缘层上与栅极对应的位置处设置凹槽,使得有源层可以设置于与栅绝缘层上的凹槽对应的位置处,这样可以有利于更好的形成有源层、源极和漏极,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,形成的有源层出现断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。进而,可以提高生产效率。
本发明的实施例提供一种阵列基板,该阵列基板包括附图1~3对应的实施例提供的任一薄膜晶体管,该薄膜晶体管可以是栅极底接触类型。
本发明的实施例提供的阵列基板,通过在阵列基板的薄膜晶体管的栅绝缘层上与栅极对应的位置处设置凹槽,使得有源层可以设置于与栅绝缘层上的凹槽对应的位置处,这样可以有利于更好的形成有源层、源极和漏极,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,形成的有源层出现断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。进而,可以提高生产效率。
本发明的实施例提供一种显示装置,该显示装置包括本发明的实施例提供的阵列基板,该显示装置可以为:手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本发明的实施例提供的显示装置,通过在显示装置的薄膜晶体管的栅绝缘层上与栅极对应的位置处设置凹槽,使得有源层可以设置于与栅绝缘层上的凹槽对应的位置处,这样可以有利于更好的形成有源层、源极和漏极,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,形成的有源层出现断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。进而,可以提高生产效率。
本发明的实施例提供一种薄膜晶体管的制作方法,该薄膜晶体管可以是栅极底接触类型,参照图4所示,该方法包括以下步骤:
101、在基板上形成包括栅极、栅线和栅线引线的栅金属层。
具体的,可以采用磁控溅射的方法在基板例如玻璃基板或石英基板上沉积一层厚度在至的金属薄膜,该金属薄膜通常可以采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属,也可以使用上述几种材料薄膜的组合结构。然后,用掩模板通过曝光、显影、刻蚀、剥离等构图工艺处理,在基板的一定区域上形成栅金属层。
102、在栅金属层上形成一层在与栅极对应的位置处设置有凹槽的栅绝缘层。
具体的,可以利用化学汽相沉积法或者磁控溅射的方法在玻璃基板上沉积厚度为至的栅电极绝缘层薄膜,该栅绝缘层薄膜的材料通常是氮化硅,也可以使用氧化硅和氮氧化硅等,本实施例中优选光敏有机材料。通过使用掩膜板,在栅极上方进行紫外曝光形成栅绝缘层上与栅极对应的位置处具有凹槽的形状。
本发明的实施例提供的薄膜晶体管的制作方法,通过在薄膜晶体管的栅绝缘层上与栅极对应的位置处设置凹槽,使得有源层可以设置于与栅绝缘层上的凹槽对应的位置处,这样可以有利于更好的形成有源层、源极和漏极,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,形成的有源层出现断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。进而,可以提高生产效率。
本发明的实施例提供一种薄膜晶体管的制作方法,该薄膜晶体管可以是栅极底接触类型,参照图5所示,该方法包括以下步骤:
201、在基板上形成包括栅极、栅线和栅线引线的栅金属层。
202、在栅金属层上形成一层在与栅极对应的位置处设置有凹槽的栅绝缘层。
203、在栅绝缘层上与栅绝缘层上的凹槽对应的位置处形成一层形成有源层。
具体的,可以利用化学汽相沉积法在栅绝缘层上沉积金属氧化物半导体薄膜,然后对金属氧化物半导体薄膜进行一次构图工艺形成有源层,即在光刻胶涂覆后,用普通的掩模板对基板进行曝光、显影、刻蚀形成有源层即可。
204、在有源层上形成一层源极和漏极。
其中,源极和漏极的部分图案在栅绝缘层上与栅绝缘层上的凹槽对应的位置处。
采用和制作栅线类似的方法,在基板上沉积一层类似于栅金属的厚度在到金属薄膜。通过构图工艺处理在一定区域形成源极、漏极,最终形成的源极和漏极的厚度在
205、在源极和漏极上形成一层保护层。
具体的,采用和栅绝缘层以及有源层相类似的方法,在整个基板上涂覆一层厚度在到的钝化层,其材料通常是氮化硅或透明的有机树脂材料。
需要说明的是,本实施例中的流程与上述实施例中的步骤相同的描述可以参照上述实施例中的说明,此处不再赘述。
本发明的实施例提供的薄膜晶体管的制作方法,通过在制作薄膜晶体管时,在薄膜晶体管的栅绝缘层上与栅极对应的位置处设置凹槽,使得有源层可以设置于与栅绝缘层上的凹槽对应的位置处,这样可以有利于更好的形成有源层、源极和漏极,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,形成的有源层出现断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。进而,可以提高生产效率。
本发明的实施例提供一种薄膜晶体管的制作方法,该薄膜晶体管可以是栅极底接触类型,参照图6所示,该方法包括以下步骤:
301、在基板上形成包括栅极、栅线和栅线引线的栅金属层。
302、在栅金属层上形成一层在与栅极对应的位置处设置有凹槽的栅绝缘层。
303、在栅绝缘层上形成源极和漏极。
其中,源极和漏极的部分图案在栅绝缘层上与栅绝缘层上的凹槽对应的位置处。
具体的,可以采用在栅绝缘层上涂敷一层负性光刻胶,通过掩膜板形成源漏极区域的图案,然后通过真空镀膜的方法在栅绝缘层上沉积一层金属薄膜,最终进行负性光刻胶脱模工艺形成源极和漏极。
304、在源极和漏极上与栅绝缘层上的凹槽对应的位置处形成一层形成有源层。
具体的,可以采用溶液法涂敷有机半导体材料,形成有源层。
305、在有源层上形成一层保护层。
需要说明的是,本实施例中的流程与上述实施例中的步骤相同的描述可以参照上述实施例中的说明,此处不再赘述。
本发明的实施例提供的薄膜晶体管的制作方法,通过在制作薄膜晶体管时,在栅绝缘层上与栅极对应的位置处设置凹槽,使得有源层可以设置于与栅绝缘层上的凹槽对应的位置处,这样可以有利于更好的形成有源层、源极和漏极,解决了现有的薄膜晶体管的结构中由于源漏电极与绝缘层之间存在段差且不在同一界面,使得最终在形成有源层时,在源漏电极和绝缘层上的膜厚不易控制,形成的有源层出现断线的问题,提高了薄膜晶体管的性能和稳定性,降低了生产成本。进而,可以提高生产效率。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (9)
1.一种薄膜晶体管,所述薄膜晶体管为栅极底接触型,所述薄膜晶体管包括:栅极和栅绝缘层,其特征在于,
所述栅绝缘层上与所述栅极对应的位置处设置有凹槽;
所述栅绝缘层上的凹槽的宽度大于或者等于所述栅极的宽度;
所述薄膜晶体管还包括源极和漏极,所述源极和漏极的部分图案形成在所述凹槽内,且与所述栅绝缘层直接接触。
2.根据权利要求1所述的薄膜晶体管,其特征在于,所述薄膜晶体管还包括:有源层,
所述有源层形成在所述栅绝缘层上,与所述栅绝缘层上的凹槽对应的位置处。
3.根据权利要求2所述的薄膜晶体管,其特征在于,
所述栅绝缘层上的凹槽的高度大于或者等于所述有源层的厚度。
4.根据权利要求2所述的薄膜晶体管,其特征在于,
所述有源层的材料为有机半导体材料。
5.一种阵列基板,其特征在于,所述阵列基板包括权利要求1~4任一所述的薄膜晶体管。
6.一种显示装置,其特征在于,所述显示装置包括阵列基板,其中:
所述阵列基板为权利要求5所述的阵列基板。
7.一种薄膜晶体管的制作方法,所述方法包括:形成包括栅极、栅线和栅线引线的栅金属层,其特征在于,还包括:
在所述栅金属层上形成一层在与所述栅极对应的位置处设置有凹槽的栅绝缘层;
所述栅绝缘层上的凹槽的宽度大于或者等于所述栅极的宽度;
所述方法还包括:在所述凹槽内且与所述栅绝缘层直接接触的位置处形成源极和漏极的部分图案。
8.根据权利要求7所述的方法,其特征在于,所述方法还包括:
在所述栅绝缘层上与所述栅绝缘层上的凹槽对应的位置处形成一层有源层。
9.根据权利要求8所述的方法,其特征在于,
所述栅绝缘层上的凹槽的高度大于或者等于所述有源层的厚度。
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