CN209418488U - A kind of metallic micro channel heat sink structure applied to chip cooling - Google Patents
A kind of metallic micro channel heat sink structure applied to chip cooling Download PDFInfo
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- CN209418488U CN209418488U CN201822115274.1U CN201822115274U CN209418488U CN 209418488 U CN209418488 U CN 209418488U CN 201822115274 U CN201822115274 U CN 201822115274U CN 209418488 U CN209418488 U CN 209418488U
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- metal substrate
- heat sink
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The utility model proposes a kind of metallic micro channel heat sink structures applied to chip cooling, it is designed by three-dimensional vertical structure micro sprue system, microfluid picks up rank after the inflow of encapsulating housing bottom and then the cooling high-power RF die hot spots of upper shunting pick up rank and lower outflow, the function of high efficiency and heat radiation while realizing superchip, it solves the problems such as traditional fluid channel low heat conductivity and metal fluid channel manufacturing process compatibility, is of great significance.
Description
Technical field
The utility model relates to microelectronics Packaging fields, further relate to a kind of based on the vertical of metal micro-processing technology
Structural metal fluid channel heat sink structure, this structure are applied to high-power chip high efficiency and heat radiation.
Background technique
With the fast development in the fields such as 5G wireless communication, radar, unmanned plane, satellite, the application of high-power RF chip
Prospect is more and more wide.It is as follows currently based on the highly integrated microwave front-end active block structure of high density interconnection substrate.Microwave print
Circuit board or LTCC/HTCC interconnection substrates processed are assemblied on aluminum alloy substrate, high-power RF device installation insertion aluminium alloy
On the molybdenum copper or diamond copper high-performance support plate of structural member, and pass through with the interconnection substrates being assemblied on aluminum alloy junction component side by side
Wire bonding realizes electrical connection, and control circuit chip etc. is mounted on microwave printed circuit plate or LTCC/HTCC interconnection substrates etc.
On high density interconnection substrate plate.Microwave front-end active block module is assemblied in soaking plate, radiates on heat conducting pipe, microwave front-end
High-power chip is mainly carried by molybdenum copper support plate or diamond/copper composite high-performance between knot Al-alloy casing in active block
High density hot-fluid is conducted and is spread by plate.This technical solution is substantially a kind of two-dimensional surface hybrid integrated, passive in module body
Heat transfer, external heat dissipation technology, represent the typical capabilities of current hybrid integrated.
The heat radiation power of current power amplifier chips has reached 500W/cm2, with further increasing for chip power density, not
Come how power amplifier chips heat radiation power will realize that rapid cooling of the chip within the regulation working time is to realize up to 1000W/cm2
The key of the highly reliable work of probe unit.In view of multiple solutions thermal resistance between high-power die and structural member shell, module at present
External heat dissipation, the in vivo heat transfer of passive heat exchange pattern, technological means is single, is not able to satisfy tomorrow requirement.
Utility model content:
In view of the above-mentioned problems, the utility model aim is to provide a kind of stereo metal micro-channel heat sink structure, solve existing
There is high-power chip integrated heat dissipation technology to face defect.
In order to solve the above technical problems, the utility model discloses a kind of metallic micro channel applied to chip cooling is heat sink
Structure, comprising: the double-level-metal substrate of setting stacked on top of one another；
Wherein the first metal substrate positioned at upper layer has the first semi open model flat in the one side towards the second metal substrate
Face microchannel；The first semi open model planar microchannels towards the side of the second metal substrate be opening face, and its along
The direction for being parallel to the first metal substrate upper surface extends；One side of second metal substrate towards the first metal substrate, tool
Extend vertically through microchannel；The microchannel that extends vertically through is along being parallel to the direction of the second metal substrate side surface through described
Second metal substrate；
One side of first metal substrate far from the second metal substrate and the thermally conductive connection of radio frequency chip；Second metal
Substrate is connect far from the one side of the first metal substrate with aluminum alloy substrate；
The one side of the aluminum alloy substrate towards the second metal substrate has the second semi open model planar microchannels；It is described to hang down
Directly through microchannel is respectively communicated with the first semi open model planar microchannels, the second semi open model planar microchannels form three-dimensional
Vertical structure micro sprue system.
In a preferred embodiment: first metal substrate, bimetallic material include but is not limited to tungsten or molybdenum or
Titanium or aluminium or copper.
In a preferred embodiment: the semi open model planar microchannels are linear type or flow-disturbing column type or fin-type.
In a preferred embodiment: the microchannel that extends vertically through is rectangle or circle.
Compared to the prior art, high density interconnection base is based on for high-power RF chip (Re Liu Mi Du≤500W/cm2)
The highly integrated heat-radiating integrated demand of microwave front-end active block structure of plate, the utility model proposes one kind to dissipate applied to chip
The metallic micro channel heat sink structure and its manufacturing method of heat, are designed, microfluid by 3-dimensional multi-layered vertical metal microchannel structure
Rank is picked up after the inflow of encapsulating housing bottom and then the cooling high-power RF die hot spots of upper shuntings pick up rank and lower outflow, realize
The function of high efficiency and heat radiation while superchip, solves traditional fluid channel low heat conductivity and metal fluid channel manufacturing process is simultaneous
The problems such as capacitive, are of great significance.
It is specific have it is following the utility model has the advantages that
1) propose it is vertical shunt heat dissipation metal microchannel heat dissipation solution, solve traditional fluid channel can not carry out it is more
The problem of chip cooling；
2) metal fluid channel is solved with high-power RF integrated chip compatibility issue；
3) external macroencapsulation is radiated and sets up effective combination with the heat dissipation of high density high-power chip, greatly improved
Radiating efficiency；
4) it is expected to realize the heat-sinking capability that heat flow density is up to 1000W/cm2 hot spot.
Detailed description of the invention
Fig. 1 is the front view of the metallic micro channel heat sink structure applied to chip cooling；
Fig. 2 is the top view of the metallic micro channel heat sink structure applied to chip cooling；
Fig. 3 is the front view of three-dimensional vertical structure micro sprue system；
Fig. 4 is cross-sectional view of the Fig. 3 on the direction a-a；
Fig. 5 is cross-sectional view of the Fig. 3 on the direction b-b；
Fig. 6 is cross-sectional view of the Fig. 3 on the direction c-c；
Fig. 7-12 is the manufacturing process flow diagram of the metallic micro channel heat sink structure applied to chip cooling；
Specific embodiment
It is practical new to this below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer
The embodiment of type is described in detail.
The embodiments of the present invention are described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and cannot be construed to the utility model
Limitation.
Following disclosure provides many different embodiments or example is used to realize the different structure of the utility model.For
The disclosure of simplified the utility model, is hereinafter described the component of specific examples and setting.Certainly, they are only and show
Example, and purpose does not lie in limitation the utility model.In addition, the utility model can in different examples repeat reference numerals
And/or letter.This repetition is for purposes of simplicity and clarity, itself not indicate discussed various embodiments and/or set
Relationship between setting.In addition, the example of various specific techniques and material that the utility model provides, but this field is common
Technical staff can be appreciated that the applicable property of other techniques and/or the use of other materials.
Present embodiment discloses the metallic micro channel heat sink structures for being applied to chip cooling, can refer to Fig. 1-Fig. 6, comprising:
The double-level-metal substrate of setting stacked on top of one another；
Wherein it is located at the one side of first metal substrate 100 in the second metal substrate 200 of direction on upper layer, it is half-open with first
Put formula planar microchannels 101；The first semi open model planar microchannels 101 are to open towards the side of the second metal substrate 200
Mouth face, and it extends along the direction for being parallel to 100 upper surface of the first metal substrate；Second metal substrate, 200 direction
The one side of first metal substrate 100 has and extends vertically through microchannel 201；The microchannel 201 that extends vertically through is along being parallel to
Second metal substrate 200 is run through in the direction of two metal substrates, 200 side surface；
One side of first metal substrate 100 far from the second metal substrate 200 and the thermally conductive connection of radio frequency chip 400；Institute
The second metal substrate 200 is stated to connect far from the one side of the first metal substrate 100 with aluminum alloy substrate 500；
The one side of the aluminum alloy substrate 500 towards the second metal substrate 200 has the second semi open model planar microchannels
501；It is described to extend vertically through microchannel 201 to be respectively communicated with the first semi open model planar microchannels 101, the second semi open model flat
Face microchannel 501 forms three-dimensional vertical structure micro sprue system.
The upper surface 510 of aluminum alloy substrate 500 is additionally provided with high density interconnection substrate 800；By the high-power RF chip
400 upper surface 410 carries out routing connection with the upper surface 810 of the high density interconnection substrate 800, passes through 900 shape of metal wire
At electrical interconnection structure.
By above-mentioned three-dimensional vertical structure micro sprue system, height can be provided to multiple high-power RF chips 400 simultaneously
Effect heat dissipation, and there is splendid compatibility with high-power RF chip 400, high density interconnection substrate 800 and aluminum alloy substrate 500
Property；External macroencapsulation is set up into effective combination with the heat dissipation of high density high-power chip.
Wherein, first metal substrate 100, the second metal substrate 200 be tungsten and its alloy, molybdenum and its alloy, titanium,
Aluminium, copper or other conductive materials.
The first semi open model planar microchannels 101 are linear type, flow-disturbing column type or fin-type；It is described extend vertically through it is micro-
Channel 201 is rectangle or circle；The high density interconnection substrate 800 is microwave printed circuit plate or LTCC/HTCC interconnection substrates.
With further reference to Fig. 7-12, the present embodiment also discloses the metallic micro channel heat sink structure applied to chip cooling
Manufacturing method:
Step 1, as shown in fig. 7, providing the first metal substrate 100, the first metal substrate 100 has upper along thickness direction
Surface 110 and lower surface 120 are processed on the lower surface 120 of first metal substrate 100 by metal micro-processing technology
First semi open model planar microchannels 101；
Step 2, as shown in figure 8, providing the second metal substrate 200, the second metal substrate 200 has upper along thickness direction
Surface 210 and lower surface 220, by metal micro-processing technology in the upper surface 210 and lower surface of second metal substrate 200
It is processed on 220 through micro-channel structure 201；
Step 3, as shown in figure 9, by the lower surface 110 of first metal substrate 100 with second metal substrate 200
Upper surface 210 assemble；So that the first semi open model planar microchannels 101 form sealed connection with through fluid channel 201,
Form the vertical micro-channel structure 301 of open three dimensional；
Step 4, as shown in Figure 10, several high-power RF chips 400 are provided, the chip has upper along thickness direction
Surface 410 and lower surface 420, by the lower surface 420 of the high-power RF chip 400 with first metal substrate 100
Upper surface 110 fits together, and assembled position respectively corresponds the described first open 101 region of plane micro-channel structure；
Step 5, as shown in figure 11, aluminum alloy substrate 500 is provided, the aluminum alloy substrate 500 has along thickness direction
It is micro- logical to process the second semi open model plane in the upper surface 510 of the aluminum alloy substrate 500 for upper surface 510 and lower surface 520
Road 501；The lower surface 220 of second metal substrate 200 is assembled in one with the upper surface 510 of the aluminum alloy substrate 500
It rises；It is described to form airtight connection with the second semi open model planar microchannels 501 through fluid channel 201, it is half-open together with described first
It puts formula planar microchannels 101 and forms three-dimensional vertical structure micro sprue system 601；
Step 6, as shown in figure 12, the high density interconnection substrate 800 for being pasted with control circuit chip 700, the height are provided
Density interconnection substrates 800 have upper surface 810 and lower surface 820 along thickness direction, by the high density interconnection substrate 800
Lower surface 820 is assemblied in the upper surface 510 of the aluminum alloy substrate 500；By the upper surface of the high-power RF chip 400
410 with the high density interconnection substrate 800 upper surface 810 carry out routing connection, pass through metal wire 900 formed electricity interlinkage knot
Structure.
The metal micro-processing technology in step 1) and step 2) is metal plasma deep etching technology or metal minute-pressure
Print technology or metal superfine spark technology.The lower surface of the first metal substrate described in step 3) is the same as second metal liner
The upper surface assembling at bottom assembly technology used is polymer-bound or metal eutectic bonding or microwelding；By institute in step 4)
It states radio frequency chip and fits together assembly technology used with the upper surface of first metal substrate as golden gold bonding or copper and tin
Bonding.The high-power RF chip described in step 4) is arranged at "-" type or rectangular array.It is served as a contrast in step 5) in aluminium alloy
It is CNC mechanical processing technique that the upper surface at bottom, which processes processing technology used by the second semi open model flow passage structure,.
Obviously, the above embodiments of the present invention is merely examples for clearly illustrating the present invention, and
It is not limitations of the embodiments of the present invention.For those of ordinary skill in the art, in above description
On the basis of can also make other variations or changes in different ways.There is no need and unable to give all embodiments
Exhaustion.Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention etc., should be included in
Within the protection scope of the utility model claims.
Claims (4)
1. a kind of metallic micro channel heat sink structure applied to chip cooling, characterized by comprising: pair of setting stacked on top of one another
Layer metal substrate；
Wherein the first metal substrate positioned at upper layer has the first semi open model plane micro- in the one side towards the second metal substrate
Channel；The first semi open model planar microchannels are opening face towards the side of the second metal substrate, and it is along parallel
Extend in the direction of the first metal substrate upper surface；Second metal substrate has and hangs down towards the one side of the first metal substrate
Directly run through microchannel；The microchannel that extends vertically through is along being parallel to the direction of the second metal substrate side surface through described second
Metal substrate；
One side of first metal substrate far from the second metal substrate and the thermally conductive connection of radio frequency chip；Second metal substrate
One side far from the first metal substrate is connect with aluminum alloy substrate；
The one side of the aluminum alloy substrate towards the second metal substrate has the second semi open model planar microchannels；It is described vertically to pass through
It wears microchannel and is respectively communicated with the first semi open model planar microchannels, the second semi open model planar microchannels formation three-dimensional perpendicular
Structure micro sprue system.
2. a kind of metallic micro channel heat sink structure applied to chip cooling according to claim 1, it is characterised in that: institute
State the first metal substrate, bimetallic material includes but is not limited to tungsten or molybdenum or titanium or aluminium or copper.
3. a kind of metallic micro channel heat sink structure applied to chip cooling according to claim 1, it is characterised in that: institute
Stating semi open model planar microchannels is linear type or flow-disturbing column type or fin-type.
4. a kind of metallic micro channel heat sink structure applied to chip cooling according to claim 1, it is characterised in that: institute
Stating and extending vertically through microchannel is rectangle or circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822115274.1U CN209418488U (en) | 2018-12-17 | 2018-12-17 | A kind of metallic micro channel heat sink structure applied to chip cooling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822115274.1U CN209418488U (en) | 2018-12-17 | 2018-12-17 | A kind of metallic micro channel heat sink structure applied to chip cooling |
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| Publication Number | Publication Date |
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| CN209418488U true CN209418488U (en) | 2019-09-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560054A (en) * | 2018-12-17 | 2019-04-02 | 厦门大学 | A kind of metallic micro channel heat sink structure and its manufacturing method applied to chip cooling |
| CN111524814A (en) * | 2020-03-30 | 2020-08-11 | 中国电子科技集团公司第二十九研究所 | Preparation method of high-reliability and high-density integrated structure of power device |
-
2018
- 2018-12-17 CN CN201822115274.1U patent/CN209418488U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560054A (en) * | 2018-12-17 | 2019-04-02 | 厦门大学 | A kind of metallic micro channel heat sink structure and its manufacturing method applied to chip cooling |
| CN111524814A (en) * | 2020-03-30 | 2020-08-11 | 中国电子科技集团公司第二十九研究所 | Preparation method of high-reliability and high-density integrated structure of power device |
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