CN104078329B - The forming method of autoregistration multiple graphics - Google Patents
The forming method of autoregistration multiple graphics Download PDFInfo
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- CN104078329B CN104078329B CN201310106682.XA CN201310106682A CN104078329B CN 104078329 B CN104078329 B CN 104078329B CN 201310106682 A CN201310106682 A CN 201310106682A CN 104078329 B CN104078329 B CN 104078329B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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Abstract
A kind of forming method of autoregistration multiple graphics, comprising: part of the surface layer to be etched has several the first discrete sacrificial layers, and surface layer to be etched is exposed between adjacent first sacrificial layer, and the first sacrificial layer surface has the second sacrificial layer；Sidewall surfaces along the second sacrificial layer remove the second sacrificial layer of part, and expose the first sacrificial layer surface of part；Exposure mask film is formed in layer to be etched, the first sacrificial layer and the second sacrificial layer surface；It is etched back to exposure mask film, the first sacrificial layer surface in the second sacrificial layer two sides forms the second exposure mask, forms the first exposure mask on the surface layer to be etched of the first sacrificial layer two sides；After forming the first exposure mask and the second exposure mask, the second sacrificial layer is removed；After removing the second sacrificial layer, using the second exposure mask as exposure mask, the first sacrificial layer of etching until expose it is layer to be etched until, the first sacrificial layer after etching formation third exposure mask.The forming method of autoregistration multiple graphics of the present invention is simple, and it is accurate to be formed by autoregistration multiple graphics.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of forming methods of autoregistration multiple graphics.
Background technique
With being constantly progressive for semiconductor technology, the process node of semiconductor devices just constantly reduces.However, due to by
The limitation of existing photoetching process precision is difficult to meet features in semiconductor devices with the mask pattern that existing photoetching process is formed
The demand that size persistently reduces has contained the development of semiconductor technology.
In order to which the size of semiconductor devices, the prior art can be further reduced on the basis of existing photoetching process
Propose a kind of multiple graphical technique.Wherein, autoregistration quadruple patterning process (SaDDP, Self-aligned Double
Double Patterning) because it is capable of forming smaller szie exposure mask there is application prospect.Fig. 1 to Fig. 4 is the prior art
The schematic diagram of the section structure of the process of exposure mask is formed using four multigraph chemical industry skill of autoregistration, comprising:
Referring to FIG. 1, forming the first sacrificial layer 101 on 100 surface layer to be etched, first sacrificial layer 101 forms work
Skill are as follows: form the first sacrificial film on 100 surface layer to be etched；Several points are formed in the part of the surface of first sacrificial film
Vertical photoresist layer；It is up to exposing layer to be etched 100 by the first sacrificial film described in mask etching of the photoresist layer
Only.
Referring to FIG. 2, depositing the second sacrificial film (not shown) in layer to be etched 100 and 101 surface of the first sacrificial layer；It returns
Second sacrificial film is etched until exposing the first sacrificial layer 101, in the to be etched of 101 two sides of the first sacrificial layer
It loses 100 surface of layer and forms the second sacrificial layer 102.
Referring to FIG. 3, the first sacrificial layer 101(of removal is as shown in Figure 2 after forming the second sacrificial layer 102)；It is removing
After first sacrificial layer 101, in the 102 surface deposition mask film (not shown) of the second sacrificial layer；It is etched back to the exposure mask
Film is formed until exposing the second sacrificial layer 102 on 100 surface layer to be etched of 102 two sides of the second sacrificial layer
Mask layer 103.
Referring to FIG. 4, it is as shown in Figure 3 to remove the second sacrificial layer 102(after forming mask layer 103).Subsequent energy
Enough layer to be etched 100 are etched using the mask layer 103.
However, existing four multigraph chemical industry skill of autoregistration is complicated, process time and cost will increase.
The related data of more multiple graphical techniques please refers to the United States Patent (USP) text of Publication No. US2012085733A1
Part.
Summary of the invention
Problems solved by the invention is to provide a kind of forming method of autoregistration multiple graphics, and it is multiple can to simplify autoregistration
The forming method of figure saves cost.
To solve the above problems, the present invention provides a kind of forming method of autoregistration multiple graphics, comprising: provide to be etched
Layer, the part of the surface layer to be etched have several the first discrete sacrificial layers, expose between adjacent first sacrificial layer to
Layer surface is etched, first sacrificial layer surface has the second sacrificial layer；Along the sidewall surfaces removal portion of second sacrificial layer
Divide second sacrificial layer, makes the size reduction of second sacrificial layer, and expose the first sacrificial layer surface of part；Described
Layer to be etched, the first sacrificial layer and the second sacrificial layer surface form exposure mask film；It is etched back to the exposure mask film, until exposing
Until first sacrificial layer and the second sacrificial layer surface, the first sacrificial layer surface in the second sacrificial layer two sides forms the second exposure mask,
The first exposure mask is formed on the surface layer to be etched of the first sacrificial layer two sides；After forming the first exposure mask and the second exposure mask, removal
Second sacrificial layer.
Optionally, further includes: after removing second sacrificial layer, using second exposure mask as exposure mask, described in etching
First sacrificial layer until expose it is layer to be etched until, the first sacrificial layer after etching forms third exposure mask.
Optionally, the technique along the sidewall surfaces removal segment thickness of second sacrificial layer is plasma dry etch
Technique, the parameter of the plasma dry etch process are as follows: air pressure is 0 millitorr~50 millitorrs, and bias is 0 volt~100 volts, is carved
Erosion total gas flow rate is 100 standard milliliters/minute~500 standard milliliters/minute.
Optionally, the material of second sacrificial layer is different from the material of the first sacrificial layer, the material of second sacrificial layer
Material is polysilicon, amorphous carbon, silicon oxide or silicon nitride.
Optionally, when the material of second sacrificial layer is polysilicon, etching gas includes hydrogen bromide and oxygen, described
The volume ratio of hydrogen bromide and oxygen is 1:1~30:1；When the material of second sacrificial layer is silica, etching gas includes
The volume ratio of lithium four carbon and helium, lithium four carbon and helium is 1:1~40:1；When the material of second sacrificial layer
When material is silicon nitride, etching gas includes a fluoromethane and helium, and the volume ratio of a fluoromethane and helium is 1:1~40:
1。
Optionally, further includes: before reducing the second sacrificial layer size, if forming dry weight in second sacrificial layer surface
The sacrificial layer of folded setting, the size of the sacrificial layer of several overlappings is consistent with the first sacrificial layer and the second sacrificial layer, described
The material of several sacrificial layers is different, and several sacrificial layers are different from the material of the first sacrificial layer or the second sacrificial layer；It is covered in formation
Before film film, the sidewall surfaces along each layer sacrificial layer remove segment thickness, are respectively less than the size of every layer of sacrificial layer and are located at this
The size of layer lower layer of sacrificial layer of sacrificial layer, and expose the partial sacrifice layer surface positioned at lower layer of this layer of sacrificial layer, and institute
It states sacrificial layer and exposes the second sacrificial layer surface of part；The exposure mask film is also formed into the side of the sacrificial layer of several overlappings
Wall and top surface；When being etched back to the exposure mask film, the sacrificial layer top surface of several overlappings is also exposed, respectively at every layer
Sacrificial layer two sides form the 4th exposure mask positioned at this layer next layer of sacrificial layer surface；Removal is located at the sacrificial layer at top, and with institute
State sacrificial layer, the second sacrificial layer and the first sacrificial layer of the 4th several overlappings of mask etching until expose it is layer to be etched until.
Optionally, the sacrificial layer of several overlappings is 1~4 layer, and the material of the sacrificial layer of several overlappings is polycrystalline
Silicon, amorphous carbon, silicon oxide or silicon nitride；Technique along the sidewall surfaces removal segment thickness of each layer sacrificial layer is plasma
Dry etch process, the parameter of the plasma dry etch process are as follows: air pressure be 0 millitorr~50 millitorrs, bias be 0 volt~
100 volts, etching gas total flow is 100 standard milliliters/minute~500 standard milliliters/minute；When the material of the sacrificial layer is
When polysilicon, etching gas includes hydrogen bromide and oxygen, and the volume ratio of the hydrogen bromide and oxygen is 1:1~30:1；When described
When the material of sacrificial layer is silica, etching gas includes lithium four carbon and helium, the body of lithium four carbon and helium
Product is than being 1:1~40:1；When the material of the sacrificial layer is silicon nitride, etching gas includes a fluoromethane and helium, described
The volume ratio of one fluoromethane and helium is 1:1~40:1.
Optionally, the forming method of first sacrificial layer and the second sacrificial layer are as follows: deposit first on surface layer to be etched
Sacrificial film；The second sacrificial film is deposited on the first sacrificial film surface；It is formed graphically on second sacrificial film surface
Layer, the patterned layer define the location and shape of several first sacrificial layers and the second sacrificial layer；It is with the patterned layer
Exposure mask, etch second sacrificial film and the first sacrificial film until expose it is layer to be etched until, the first sacrificial layer of formation
With the second sacrificial layer.
Optionally, the formation process of the patterned layer is photoetching process, nanoimprinting process or orientation self-assembly process.
Optionally, the technique of the second sacrificial film of the etching and the first sacrificial film is anisotropic dry etching work
Skill.
Optionally, before the size for reducing the second sacrificial layer, the thickness of second sacrificial layer is than the first sacrificial layer
Thickness is thin.
Optionally, the material of the exposure mask film, the first sacrificial layer or the second sacrificial layer is polysilicon, amorphous carbon, oxygen
SiClx or silicon nitride, and the material of the exposure mask film is different from the material of the first sacrificial layer or the second sacrificial layer.
Optionally, the technique for removing the second sacrificial layer is dry etch process or wet-etching technology.
Optionally, the formation process of the exposure mask film is atom layer deposition process or chemical vapor deposition process.
Optionally, the thickness of the exposure mask film is less than the thickness gauge removed along the sidewall surfaces of second sacrificial layer
It is very little.
Optionally, described layer to be etched for semiconductor substrate.
Optionally, further includes: semiconductor substrate is provided, it is described layer to be etched positioned at the semiconductor substrate surface.
Optionally, further includes: positioned at the semiconductor substrate and it is layer to be etched between device layer, the device layer includes
Semiconductor devices and the dielectric layer for being electrically isolated the semiconductor devices.
Optionally, described layer to be etched for polysilicon layer, metal layer or dielectric layer.
Optionally, the semiconductor substrate is silicon substrate.
Optionally, it after forming third exposure mask, using first exposure mask and third exposure mask as exposure mask, etches described to be etched
Lose layer.
Compared with prior art, technical solution of the present invention has the advantage that
Surface layer to be etched has the first sacrificial layer, and first sacrificial layer surface has the second sacrificial layer；From described
The sidewall surfaces lightening holes thickness of two sacrificial layers reduces the second sacrificial layer size, and exposes part the first sacrificial layer table
Face；It is subsequent only to form one layer of exposure mask film in layer to be etched, the first sacrificial layer and the second sacrificial layer surface, and returned using primary
Etching technics etches the exposure mask film, can form first on the surface layer to be etched of the first sacrificial layer two sides simultaneously and cover
Film, the first sacrificial layer surface in the second sacrificial layer two sides form the second exposure mask, then form autoregistration quadruple figure.It is described from
Alignment quadruple figure is etched back to technique and is formed only with primary depositing technique and once, and forming method is simple, simplify processing step,
It saves raw material, reduce cost.
It further, is plasma dry etch work from the technique of the second sacrificial layer sidewall surfaces lightening holes thickness
Skill, and in the plasma dry etch process, it is always flowed by adjusting air pressure (pressure), bias (bias) and gas
Amount realizes the etching technics for being parallel to the etch rate of surface direction layer to be etched, being greater than perpendicular to table layer to be etched
The etch rate in face direction enables the etching technics to remove the second sacrificial layer of part from the sidewall surfaces of the second sacrificial layer；
Meanwhile second sacrificial layer is few perpendicular to the size reduction amount of surface direction layer to be etched.The second sacrificial layer after etching is flat
Row in surface direction layer to be etched size less than the first sacrificial layer, it is subsequent only to form one layer of exposure mask film, and only lead to
It crosses and is once etched back to technique and can either be formed simultaneously the first exposure mask and the second exposure mask, then form autoregistration quadruple figure.
Further, the thickness of second sacrificial layer is thinner than the thickness of the first sacrificial layer, then is subsequently formed sacrificial in first
Height, the height of the second exposure mask than being formed in the second sacrificial layer two sides of first exposure mask of domestic animal layer two sides are high；Described in removal
After second sacrificial layer, and using the second exposure mask as the first sacrificial layer of mask etching after, can guarantee first exposure mask have foot
Enough height and size, so as to the subsequent exposure mask that can be layer to be etched as etching of first exposure mask, to ensure that quarter
The stability of corrosion figure shape.
Further, form the sacrificial layer of several overlappings in second sacrificial layer surface, and formed exposure mask film it
Before, the sidewall surfaces along each layer sacrificial layer remove segment thickness, are less than the size of this layer of sacrificial layer and are located under this layer of sacrificial layer
The size of one layer of sacrificial layer, and the exposure mask film is made also to cover the sacrificial layer side wall and top surface of several overlappings；
Therefore after being etched back to the exposure mask film, the 4th exposure mask, the 4th exposure mask energy can be formed in each layer sacrificial layer two sides respectively
It is enough to collectively form autoregistration multiple graphics with the first exposure mask and the second exposure mask, be provided commonly for etching it is layer to be etched, to make institute's shape
At device size it is smaller.
Detailed description of the invention
Fig. 1 to Fig. 4 is the cross-section structure signal for the process that the prior art forms exposure mask using four multigraph chemical industry skill of autoregistration
Figure；
Fig. 5 to Figure 10 is that the cross-section structure of the forming process of autoregistration multiple graphics described in first embodiment of the invention shows
It is intended to；
Figure 11 to Figure 13 is the cross-section structure of the forming process of autoregistration multiple graphics described in second embodiment of the invention
Schematic diagram.
Specific embodiment
As stated in the background art, existing autoregistration quadruple patterning process is more complex, high process cost.
The present inventor has found after study, when the prior art forms autoregistration quadruple figure, please continue to refer to figure
2, it is necessary first to which the second sacrificial layer is formed on 100 surface layer to be etched of 101 two sides of the first sacrificial layer using self-registered technology
102.With continued reference to FIG. 3, removing first sacrificial layer 101 later, and sacrificial in described second using self-registered technology again
100 surface layer to be etched of 102 two sides of domestic animal layer forms mask layer 103.Wherein, by self-registered technology twice, to be respectively formed
Second sacrificial layer 102 and mask layer 103 need by depositing operation twice and are etched back to technique, not only answer processing step
It is miscellaneous, it also will cause the waste of raw material, be unfavorable for promoting in production.Moreover, second sacrificial layer 102 uses depositing operation
101 two sides of the first sacrificial layer are formed in technique is etched back to, the size and pattern of second sacrificial layer 102 are difficult to ensure, are held
Easily make that the pattern for being formed in the mask layer 103 of 102 two sides of the second sacrificial layer is bad, size is inaccurate, causes to be formed by
Performance of semiconductor device is unstable.
It is further studied by the present inventor, forms the first sacrificial layer on surface layer to be etched, described first is sacrificial
Domestic animal layer surface has the second sacrificial layer；From after the surface lightening holes thickness of second sacrificial layer, to expose part
One sacrificial layer surface；Later, it is only necessary to using primary depositing technique and being etched back to technique, can either the first sacrificial layer two sides to
It etches layer surface and forms the first exposure mask, the first sacrificial layer surface in the second sacrificial layer two sides forms the second exposure mask；Wherein, second
Exposure mask of the exposure mask as the first sacrificial layer of etching, the first sacrificial layer after etching form third exposure mask, then first exposure mask and
Third exposure mask is the autoregistration quadruple figure formed.The forming process of the autoregistration quadruple figure is simple, only with primary heavy
It accumulates technique and is once etched back to technique, processing step can be simplified, save cost.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
First embodiment
Fig. 5 to Figure 10 is the schematic diagram of the section structure of the forming process of autoregistration multiple graphics described in the present embodiment.
Referring to FIG. 5, providing layer to be etched 200, the first sacrificial film 201 is deposited on 200 surface layer to be etched；First
201 surface of sacrificial film deposits the second sacrificial film 202；Several points are formed in the part of the surface of second sacrificial film 202
Vertical patterned layer 203 exposes 202 surface of the second sacrificial film, the patterned layer 203 between adjacent pattern layer 203
Define the location and shape of the subsequent several first sacrificial layer (not shown) needed to form and the second sacrificial layer (not shown).
Layer to be etched 200 surface is subsequently formed quadruple autoregistration figure, and to be formed by quadruple autoregistration figure
Shape is exposure mask, etching described layer to be etched 200, to form required semiconductor structure.
In one embodiment, semiconductor substrate (not shown) is also provided, described layer to be etched 200 are formed in the semiconductor
Substrate surface；Described layer to be etched 200 be polysilicon layer, metal layer or dielectric layer, the material of the metal layer include copper, tungsten or
Aluminium, the material of the dielectric layer include silica, silicon nitride, silicon oxynitride or amorphous carbon.In addition, the semiconductor substrate and
Device layer (not shown) can also be formed between layer to be etched 200, the device layer includes described in semiconductor devices and electric isolution
The dielectric layer of semiconductor devices.Wherein, the semiconductor substrate is silicon substrate, silicon-Germanium substrate, silicon carbide substrates, silicon-on-insulator
(SOI) substrate, germanium on insulator (GOI) substrate, glass substrate or III-V compound substrate (such as gallium nitride or GaAs
Deng)；The semiconductor devices includes transistor, resistor, capacitor, memory etc., to constitute chip or integrated circuit；Institute
It states dielectric layer and surrounds the semiconductor devices, to be electrically isolated semiconductor devices, the material of the dielectric layer is silica, nitridation
One of silicon, silicon oxynitride and low-K dielectric material are a variety of.It is subsequent autoregistration multiple graphics are formed by with the present embodiment to be
Mask etching layer to be etched 200, after etching layer to be etched 200 for a part as composition chip or integrated circuit；Or
Person, layer to be etched 200 after etching can also be used to the exposure mask as etch semiconductor substrates or device layer.
In another embodiment, it is described it is layer to be etched be semiconductor substrate, the semiconductor substrate be used for be subsequent technique
There is provided workbench, the semiconductor substrate be silicon substrate, silicon-Germanium substrate, silicon carbide substrates, silicon-on-insulator (SOI) substrate,
Germanium on insulator (GOI) substrate, glass substrate or III-V compound substrate (such as gallium nitride or GaAs etc.).It is subsequent with
The present embodiment is formed by exposure mask of the autoregistration multiple graphics as etch semiconductor substrates.
First sacrificial film 201 is used to form the first sacrificial layer, and second sacrificial film 202 is used to form second
Sacrificial layer.First sacrificial film 201 is different with the material of the second sacrificial film 202, thus, subsequent can use has selectivity
Plasma dry etch process reduce the size of the second sacrificial layer, and the morphology and size of the first sacrificial layer not will receive shadow
It rings, it can be simultaneously in the first sacrificial layer and the second sacrificial layer two only with primary depositing technique and to be once etched back to technique
Side forms mask layer.The material of first sacrificial film 201 or the second sacrificial film 202 is polysilicon, amorphous carbon, oxidation
The formation process of silicon or silicon nitride, first sacrificial film 201 or the second sacrificial film 202 is depositing operation, it is preferred that
Chemical vapor deposition process.
In addition, the thickness of first sacrificial film 201 is thick compared with the thickness of the second sacrificial film 202, described first sacrifices
Film 201 with a thickness of 1000 angstroms~2000 angstroms, second sacrificial film 202 with a thickness of 800 angstroms~1500 angstroms；Subsequent shape
At the first sacrificial layer thickness than second sacrifice thickness, be subsequently formed the height ratio in the second exposure mask of the second sacrificial layer two sides
The height for being formed in the first exposure mask of the first sacrificial layer two sides is low；After the second sacrificial layer of subsequent removal, and with the second exposure mask
For the first sacrificial layer of mask etching to form third exposure mask after, can guarantee first exposure mask have enough height and size
Exposure mask as etching layer to be etched 200.
The formation process of patterned layer 203 is photoetching process, nanoimprinting process or orientation self-assembly process.Due to existing
Patterning process limited accuracy, when guarantee patterned layer 203 accurate size when, the size of the patterned layer 203
It can not continue to zoom out, to limit the characteristic size for being formed by semiconductor devices, be unfavorable for further integrating for device.This
In embodiment, four accurate in size exposure masks can be formed in the regional scope that single patterned layer 203 is precisely formed, with
The mask etching layer to be etched 200 is formed by the size reduction of semiconductor structure, and accurate size, is conducive to semiconductor device
Part reduces and performance is stablized.In the present embodiment, the formation process of the patterned layer 203 is photoetching process, that is, is formed by
Patterned layer 203 is photoresist layer.The formation process of the photoresist layer are as follows: using spin coating proceeding in the second sacrificial film 202
Surface forms photoresist film；Using the graphical photoresist film of exposure technology, patterned layer 203 is formed；Wherein, described
The size of patterned layer 203 is limited by the exposure technology accuracy, therefore, can not form size more using photoetching process
Small and accurate in size patterned layer 203 is then that the dimension of picture that mask etching is formed is limited with the patterned layer 203
System, can not further reduce.
Referring to FIG. 6, being exposure mask with the patterned layer 203, etches second sacrificial film 202 and the first sacrifice is thin
Film 201(refer to Fig. 5) until exposing layer to be etched 200, layer to be etched 200 part of the surface formed it is several discrete
200 surface layer to be etched, the first sacrificial layer 201a are exposed between first sacrificial layer 201a, adjacent first sacrificial layer 201a
Surface has the second sacrificial layer 202a.
The technique for etching second sacrificial film 202 and the first sacrificial film 201 is anisotropic dry etching work
Skill can etch to form the side wall first sacrificial layer 201a and second sacrificial layer 202a vertical with 200 surface layer to be etched.Institute's shape
At the first sacrificial layer 201a and the second sacrificial layer 202a size it is identical；Moreover, the first sacrificial layer 201a and the second sacrificial layer
The figure of 202a is defined by patterned layer 203, thus the accuracy to size of patterned layer 203 determine the first sacrificial layer 201a and
Second sacrificial layer 202a accuracy to size.The two sides of the first sacrificial layer 201a are subsequently formed the first exposure mask, i.e., and described first
Sacrificial layer 201a is used to define the position for the first exposure mask being subsequently formed.
Referring to FIG. 7, the sidewall surfaces along the second sacrificial layer 202a remove segment thickness, make the second sacrificial layer 202a
Size reduction, and expose the part surface the first sacrificial layer 201a.
After reducing the size of the second sacrificial layer 202a, expose the part surface the first sacrificial layer 201a, then it is subsequent only
Using primary depositing technique and it once need to be etched back to technique, the first exposure mask can be formed in the first two sides sacrificial layer 201a, and
The second exposure mask is formed in the second two sides sacrificial layer 202b simultaneously, that is, forms autoregistration quadruple figure.The autoregistration quadruple figure
Simplified manufacturing process, material and save the cost can be saved.
It should be noted that removing described patterned layer 203(such as Fig. 6 institute before removing the second sacrificial layer of part 202a
Show)；In the present embodiment, the patterned layer 203 is photoresist layer, and the technique for removing photoresist layer is acid cleaning process or ash
Chemical industry skill.
Technique from sidewall surfaces removal the second sacrificial layer of part 202a of the second sacrificial layer 202a is plasma
Dry etch process, and the plasma dry etch process is in the etching speed being parallel in 200 surface direction layer to be etched
It is rate, faster than perpendicular to the etch rate in 200 surface direction layer to be etched, realize that reduce the second sacrificial layer 202a flat with this
Row is in the size on 200 direction layer to be etched, while the second sacrificial layer 202a is perpendicular to the thickness in 200 direction layer to be etched
Size reduction is less.
Specifically, by adjusting air pressure, bias and gas gross in the etching technics, with reduce for etching etc.
The free path (free path) of gas ions；And plasma free path reduces, that is, improves the probability of scattering of plasma, increases
It is parallel to the density of the plasma in 200 surface direction layer to be etched, so that reaching raising is parallel to 200 table layer to be etched
The purpose of etch rate on the direction of face.
In addition, the etching technics has selectivity for the second sacrificial layer 202a and the first sacrificial layer 201a, etching
While the second sacrificial layer 202a side wall, the size of the first sacrificial layer 201a will not be reduced, maintains described first
The size of sacrificial layer 201a it is accurate, so that the position for the first exposure mask being subsequently formed is accurate.Moreover, the quarter of the etching technics
Erosion rate is easy to control, therefore the thickness of the second sacrificial layer 202a of the removal that is etched can be controlled accurately；And etching technics it
Before, the dimension of picture of the second sacrificial layer 202a is by 203 explication of graph layer, the thickness for the second sacrificial layer 202a being removed
Degree can be controlled accurately, therefore the size of the second sacrificial layer 202a after etching is still able to maintain accurately, then is subsequently formed in institute
The position for stating the second exposure mask of the second two sides sacrificial layer 202a is accurate.
The parameter of the plasma dry etch process are as follows: air pressure is 0 millitorr~50 millitorrs, and bias is 0 volt~100
Volt, etching gas total flow are 100 standard milliliters/minute~500 standard milliliters/minute.In one embodiment, when described second
When the material of sacrificial layer 202a is polysilicon, etching gas includes hydrogen bromide and oxygen, the volume ratio of the hydrogen bromide and oxygen
For 1:1~30:1.In another embodiment, when the material of the second sacrificial layer 202a is silica, etching gas includes
Lithium four carbon (C4F6) and helium, the volume ratio of lithium four carbon and helium is 1:1~40:1.In other embodiments,
When the material of the second sacrificial layer 202a is silicon nitride, etching gas includes a fluoromethane (CH3F) and helium, a fluorine
The volume ratio of methane and helium is 1:1~40:1.
It is covered referring to FIG. 8, being formed in 200, the first sacrificial layer 201a layer to be etched and the second surface sacrificial layer 202a
Film film 204.
The exposure mask film 204 is used to form positioned at the first exposure mask of the first two sides sacrificial layer 201a and positioned at second
Second exposure mask of the two sides sacrificial layer 202a.The material of the exposure mask film 204 is polysilicon, amorphous carbon, silica or nitridation
Silicon, and the material of the exposure mask film 204 is different from the material of the first sacrificial layer 201a or the second sacrificial layer 202a, after guaranteeing
It is continuous when being etched back technique to the exposure mask film 204, it will not influence the first sacrificial layer 201a's or the second sacrificial layer 202a
Pattern；The thickness of the exposure mask film 204 is less than the thickness removed along the sidewall surfaces of the second sacrificial layer 202a,
When it is subsequent be etched back to exposure mask film 204 after, the first surface sacrificial layer 201a can be exposed, make to be formed in the first sacrifice
There is certain distance between second exposure mask of layer surface and the first exposure mask for being formed in the first sacrificial layer 201a side wall, be formed by
First exposure mask and the second exposure mask can constitute autoregistration quadruple mask pattern.
The formation process of the exposure mask film 204 is depositing operation, it is preferred that atom layer deposition process or chemical gaseous phase
Depositing operation；The atom layer deposition process or chemical vapor deposition process can accurately control the thickness of the exposure mask film 204
Degree, the exposure mask film 204 with a thickness of 10 nanometers~30 nanometers；And the thickness of the exposure mask film is determined and is subsequently formed
The size of first exposure mask and the second exposure mask, therefore the size for the first exposure mask and the second exposure mask being subsequently formed can be controlled accurately.
The parameter of depositing operation material used by exposure mask film 204 in concrete technology determines, should not excessively limit, herein not
It repeats.
Referring to FIG. 9, it is as shown in Figure 8 to be etched back to the exposure mask film 204(), until expose the first sacrificial layer 201a and
Until second surface sacrificial layer 202a, the second exposure mask is formed on 201 surface of the first sacrificial layer of the second two sides sacrificial layer 202a
204b forms the first exposure mask 204a on 200 surface layer to be etched of the first two sides sacrificial layer 201a.
The technique that is etched back to is anisotropic dry etch process, the anisotropic dry etch process parameter
Depending on the material and thickness of specific exposure mask film 204, should not excessively it limit, therefore not to repeat here.The anisotropy
Dry etch process in, the plasma of etching gas can be removed to the direction bombardment perpendicular to 200 surface layer to be etched
The exposure mask film 204 of the top surface of 200 surface layer to be etched and the first sacrificial layer 201a and the second sacrificial layer 202a, and
Form the first exposure mask 204a and the second exposure mask 204b.
The first exposure mask 204a and the second exposure mask 204b only passes through a patterning process and is formed, i.e., only can be accurate
It is as shown in Figure 5 to form a patterned layer 203() regional scope in, be capable of forming accurate in size two the first exposure mask 204a
With two the second exposure mask 204b, totally four figures as etch mask, i.e. autoregistration quadruple figure；It is formed by the first exposure mask
In the case where guaranteeing accuracy, size reduction can satisfy semiconductor devices integrated micro by 204a and the second exposure mask 204b
The growth requirement of change.
Secondly, before forming exposure mask film 204, using dry plasma etch process shrink second sacrificial layer
The size of 202a and the surface expose portion the first sacrificial layer 201a, therefore after forming exposure mask film 204, only pass through and once returns
Etching technics can remove the exposure mask film 204 of the top surface of the first sacrificial layer 201a and the second sacrificial layer 202a simultaneously,
To be formed simultaneously two the first exposure mask 204a and two the second exposure mask 204b.To the autoregistration multiple graphics of the present embodiment
Only passing through primary depositing technique and being once etched back to technique can complete, and can reduce processing step, save the cost.
Referring to FIG. 10, removing second sacrificial layer after forming the first exposure mask 204a and the second exposure mask 204b
202a(is as shown in Figure 9)；After removing the second sacrificial layer 202a, using the second exposure mask 204b as exposure mask, institute is etched
It is as shown in Figure 9 to state the first sacrificial layer 201a() the first sacrificial layer 201a shape until exposing layer to be etched 200, after etching
At third exposure mask 201b.
The technique for removing the second sacrificial layer 202a is dry etch process or wet-etching technology, due to wet-etching technology
Etching speed it is very fast, herein preferably use wet-etching technology；In addition, when the material of the second sacrificial layer 202a is nothing
When setting carbon, the technique of the second sacrificial layer 202a of removal can also be cineration technics.After removing the second sacrificial layer 202a,
The first sacrificial layer 201a of the bottom the second sacrificial layer 202a is exposed, to be subsequently formed third exposure mask 201b.
The technique of the first sacrificial layer 201a of the etching is anisotropic dry etch process, and it is vertical to be capable of forming side wall
Third exposure mask 201b in 200 surface layer to be etched, thus the figure of the third exposure mask 201b and the second exposure mask 204b
Figure it is consistent, in the case where ensure that the accurate size of the second exposure mask 204b, the accurate size of the third exposure mask 201b；
The third exposure mask 201b and the first exposure mask 204a is located at 200 surface layer to be etched, determines the figure of etching layer to be etched 200
Shape is accurate so as to make to etch the dimension of picture that layer to be etched 200 obtain.
Further, since the thickness of the first sacrificial layer 201a is thicker than the second sacrificial layer 202a, and first exposure mask
The height of 204a determines by the thickness of the first sacrificial layer 201a, the height of the second exposure mask 204b by the second sacrificial layer 202a thickness
It determines, therefore the height of the first exposure mask 204a is higher than the height of the second exposure mask 204b.Remove the second sacrificial layer 202a with
And etching the first sacrificial layer 201a after, can guarantee the first exposure mask 204a still there is enough height dimensions with etch to
Etch layer 200.
It should be noted that after forming third exposure mask 201b, with the first exposure mask 204a and third exposure mask 201b
For exposure mask, etching described layer to be etched 200；Etching layer to be etched 200 technique is anisotropic dry etch process,
Described layer to be etched 200 are made to form required figure to constitute semiconductor devices.
In the present embodiment, the second sacrificial layer is formed in the first sacrificial layer surface, the second sacrificial layer size is sacrificial compared with first
Domestic animal layer is small, and exposes the first sacrificial layer surface of part；It is subsequent only to need using primary depositing technique in layer to be etched, the first sacrifice
Layer and the second sacrificial layer surface form exposure mask film, and etch the exposure mask film using technique is once etched back to, can be
First sacrificial layer two sides form the first exposure mask, form the second exposure mask in the second sacrificial layer two sides.Secondly, second sacrificial layer exists
It is side wall table of the using plasma dry etch process from second sacrificial layer after mask etching is formed by patterned layer
Face performs etching, and with minification, therefore the size that the second sacrificial layer reduces is easy to control by etching technics, the second sacrificial layer
Accurate size, then make the position of the first exposure mask and the second exposure mask accurate.And the size of the first exposure mask and the second exposure mask is by covering
The thickness control of film film, therefore the positions and dimensions for being formed by the first exposure mask and the second exposure mask are accurate.
Second embodiment
Figure 11 to Figure 13 is the cross-section structure of the forming process of autoregistration multiple graphics described in second embodiment of the invention
Schematic diagram.
Figure 11 is please referred to, provides layer to be etched 300, the part of the surface layer to be etched 300 forms several discrete first
300 surface layer to be etched, the surface the first sacrificial layer 301a are exposed between sacrificial layer 301a, adjacent first sacrificial layer 301a
With the second sacrificial layer 302a, the surface the second sacrificial layer 302a has 3rd sacrifice layer 330.
The size of the 3rd sacrifice layer 330 is consistent with the first sacrificial layer 301a and the second sacrificial layer 302a, the third
The material of sacrificial layer 330 is polysilicon, amorphous carbon, silicon oxide or silicon nitride, and the material of the 3rd sacrifice layer 330 and the
The material of one sacrificial layer 301a or the second sacrificial layer 302a are different.
The formation process of the first sacrificial layer 301a, the second sacrificial layer 302a and 3rd sacrifice layer 330 are as follows: to be etched
300 surface of layer deposit the first sacrificial film；The second sacrificial film is deposited on the first sacrificial film surface；It is sacrificed described second thin
The surface of film deposits third sacrificial film；Several discrete patterned layers are formed in the part of the surface of the third sacrificial film,
Between adjacent pattern layer, third sacrificial film surface is exposed；Using the patterned layer as exposure mask, the third sacrifice is etched
Film, the second sacrificial film and the first sacrificial film are until exposing layer to be etched 300.
The material and structure of 300, the first sacrificial layer 301a layer to be etched and the second sacrificial layer 302a are implemented with first
Example is described identical, and therefore not to repeat here.
Figure 12 is please referred to, the sidewall surfaces along the second sacrificial layer 302a remove segment thickness, make second sacrificial layer
The size reduction of 302a, and expose the part surface the first sacrificial layer 301a；Along the sidewall surfaces removal portion of 3rd sacrifice layer 330
Divide thickness, make the size reduction of the 3rd sacrifice layer 330, and exposes the second sacrificial layer 302a table after portion size reduces
Face.
Along the technique of the sidewall surfaces removal segment thickness of 3rd sacrifice layer 330 and along the side of the second sacrificial layer 302a
Wall surface removes the technique of segment thickness, removes part along the sidewall surfaces of the second sacrificial layer 202a with described in first embodiment
The technique of thickness is identical, and therefore not to repeat here.
Figure 13 is please referred to, in the 300, first sacrificial layer 301a, the second sacrificial layer 302a and the third sacrifice layer to be etched
330 surface of layer form exposure mask film；It is etched back to the exposure mask film, until exposing the 300, first sacrificial layer layer to be etched
The second sacrificial layer until the surface of 301a, the second sacrificial layer 302a and 3rd sacrifice layer 330, in 330 two sides of 3rd sacrifice layer
The surface 302a forms the 4th exposure mask 304c, forms the second exposure mask on the first surface sacrificial layer 301a of the second two sides sacrificial layer 302a
304b forms the first exposure mask 304a on 300 surface layer to be etched of the first two sides sacrificial layer 301a.
The formation process of the exposure mask film and to be etched back to technique identical as described in first embodiment, does not do superfluous herein
It states.It should be noted that the thickness of the exposure mask film is also needed to be less than and is removed along the 3rd sacrifice layer sidewall surfaces
Thickness, make to be subsequently formed has one between the 4th exposure mask 304c and the second exposure mask 304b of the 3rd sacrifice layer two sides
Set a distance, to constitute autoregistration sixfold figure.
The subsequent removal 3rd sacrifice layer 330, and the second sacrificial layer 302a is etched with the 4th exposure mask 304c, until
Until exposing the first sacrificial layer 301a；And then the first sacrificial layer is etched with the 4th exposure mask 304c and the second exposure mask 304b
301a, until exposing 300 surface layer to be etched；Wherein, between the 4th exposure mask and layer to be etched 300 through over etching
Two sacrificial layer 302a and the first sacrificial layer 301a form the 5th exposure mask.It is subsequent with the first exposure mask 304a, third exposure mask 302b
With layer to be etched 300 described in the 5th mask etching, the dimension of picture after etching can be further reduced.
First exposure mask, the second exposure mask formed in the present embodiment and the 5th exposure mask collectively form autoregistration sixfold figure,
The size of semiconductor structure after capable of making etching further reduces.
In conclusion surface layer to be etched has the first sacrificial layer, first sacrificial layer surface has the second sacrificial layer；
From the sidewall surfaces lightening holes thickness of second sacrificial layer, reduce the second sacrificial layer size, and exposes part first
Sacrificial layer surface；It is subsequent only to form one layer of exposure mask film in layer to be etched, the first sacrificial layer and the second sacrificial layer surface, and adopt
The exposure mask film is etched with technique is once etched back to, can be formed simultaneously on the surface layer to be etched of the first sacrificial layer two sides
First exposure mask, the first sacrificial layer surface in the second sacrificial layer two sides form the second exposure mask, then form autoregistration quadruple figure.
The autoregistration quadruple figure is etched back to technique and is formed only with primary depositing technique and once, and forming method is simple, simplifies work
Skill step saves raw material, reduces cost.
It further, is plasma dry etch work from the technique of the second sacrificial layer sidewall surfaces lightening holes thickness
Skill, the plasma dry etch process are being parallel to the etch rate of surface direction layer to be etched, are being greater than perpendicular to be etched
Lose layer surface direction etch rate, can from the second sacrificial layer of side wall lightening holes, meanwhile, second sacrificial layer perpendicular to
The amount of thickness reduction of surface direction layer to be etched is few；Thus, it is possible to which the second sacrificial layer after etching is made to be parallel to table layer to be etched
The size in face direction is less than the first sacrificial layer；It is subsequent only to form one layer of exposure mask film, and only by being once etched back to work
Skill can either be formed simultaneously the first exposure mask and the second exposure mask, then form autoregistration quadruple figure.
Further, the thickness of second sacrificial layer is thinner than the thickness of the first sacrificial layer, then is subsequently formed sacrificial in first
Height, the height of the second exposure mask than being formed in the second sacrificial layer two sides of first exposure mask of domestic animal layer two sides are high；Described in removal
After second sacrificial layer, it can guarantee that first exposure mask has enough height as exposure mask layer to be etched is etched, to protect
The stability of etched features is demonstrate,proved.
Further, form the sacrificial layer of several overlappings in second sacrificial layer surface, and formed exposure mask film it
Before, the sidewall surfaces along each layer sacrificial layer remove segment thickness, are less than the size of this layer of sacrificial layer and are located under this layer of sacrificial layer
The size of one layer of sacrificial layer, and the exposure mask film is made also to cover the sacrificial layer side wall and top surface of several overlappings；
Therefore after being etched back to the exposure mask film, the 4th exposure mask, the 4th exposure mask energy can be formed in each layer sacrificial layer two sides respectively
It is enough to collectively form autoregistration multiple graphics with the first exposure mask and the second exposure mask, be provided commonly for etching it is layer to be etched, to make institute's shape
At device size it is smaller.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (19)
1. a kind of forming method of autoregistration multiple graphics characterized by comprising
There is provided it is layer to be etched, the part of the surface layer to be etched have several the first discrete sacrificial layers, it is adjacent first sacrifice
Between layer, surface layer to be etched is exposed, and first sacrificial layer surface has the second sacrificial layer, the thickness of second sacrificial layer
It spends thinner than the thickness of the first sacrificial layer；
Using plasma dry etch process removes segment thickness, the plasma along the sidewall surfaces of second sacrificial layer
Body dry etch process is for being parallel to the etch rate of surface direction layer to be etched, being greater than perpendicular to surface direction layer to be etched
Etch rate, make the size reduction of second sacrificial layer, and expose the first sacrificial layer surface of part；
Exposure mask film is formed in layer to be etched, first sacrificial layer and the second sacrificial layer surface；
It is etched back to the exposure mask film, until exposing the first sacrificial layer and the second sacrificial layer surface, in the second sacrificial layer
First sacrificial layer surface of two sides forms the second exposure mask, forms the first exposure mask on the surface layer to be etched of the first sacrificial layer two sides；
After forming the first exposure mask and the second exposure mask, second sacrificial layer is removed.
2. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that further include: removing described the
After two sacrificial layers, using second exposure mask as exposure mask, etch first sacrificial layer until expose it is layer to be etched until, quarter
The first sacrificial layer after erosion forms third exposure mask.
3. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that the plasma dry etch
The parameter of technique are as follows: air pressure is 0 millitorr~50 millitorrs, and bias is 0 volt~100 volts, and etching gas total flow is 100 standards milli
Liter/min~500 standard milliliters/minute.
4. the forming method of autoregistration multiple graphics as claimed in claim 3, which is characterized in that the material of second sacrificial layer
Different from the material of the first sacrificial layer, the material of second sacrificial layer is polysilicon, amorphous carbon, silicon oxide or silicon nitride.
5. the forming method of autoregistration multiple graphics as claimed in claim 4, which is characterized in that when the material of second sacrificial layer
When material is polysilicon, etching gas includes hydrogen bromide and oxygen, and the volume ratio of the hydrogen bromide and oxygen is 1:1~30:1；When
When the material of second sacrificial layer is silica, etching gas includes lithium four carbon and helium, lithium four carbon and
The volume ratio of helium is 1:1~40:1；When the material of second sacrificial layer is silicon nitride, etching gas includes a fluoromethane
And helium, the volume ratio of a fluoromethane and helium are 1:1~40:1.
6. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that further include: it is sacrificial reducing second
Before domestic animal layer size, several sacrificial layers overlapped, the sacrifice of several overlappings are formed in second sacrificial layer surface
The size of layer is consistent with the first sacrificial layer and the second sacrificial layer, and the material of several sacrificial layers is different, several sacrificial layers
It is different from the material of the first sacrificial layer or the second sacrificial layer；Before forming exposure mask film, along the sidewall surfaces of each layer sacrificial layer
Segment thickness is removed, the size of every layer of sacrificial layer is made to be respectively less than the size for being located at lower layer of sacrificial layer of this layer of sacrificial layer, and exposure
It is located at lower layer of this layer of sacrificial layer of partial sacrifice layer surface out, and the sacrificial layer exposes the second sacrificial layer surface of part；
The exposure mask film is also formed into the side wall and top surface of the sacrificial layer of several overlappings；It is etched back to the exposure mask film
When, the sacrificial layer top surface of several overlappings is also exposed, respectively every layer of sacrificial layer two sides, positioned at this layer next layer of sacrifice
Layer surface forms the 4th exposure mask；Removal be located at top sacrificial layer, and with the sacrificial layer of several overlappings of the 4th mask etching,
Second sacrificial layer and the first sacrificial layer until expose it is layer to be etched until.
7. the forming method of autoregistration multiple graphics as claimed in claim 6, which is characterized in that the sacrificial layer of several overlappings
It is 1~4 layer, the material of the sacrificial layer of several overlappings is polysilicon, amorphous carbon, silicon oxide or silicon nitride；It is sacrificial along each layer
The technique of the sidewall surfaces removal segment thickness of domestic animal layer is plasma dry etch process, the plasma dry etch work
The parameter of skill are as follows: air pressure be 0 millitorr~50 millitorrs, bias be 0 volt~100 volts, etching gas total flow be 100 standard milliliters/
Minute~500 standard milliliters/minute；When the material of the sacrificial layer is polysilicon, etching gas includes hydrogen bromide and oxygen,
The volume ratio of the hydrogen bromide and oxygen is 1:1~30:1；When the material of the sacrificial layer is silica, etching gas includes
The volume ratio of lithium four carbon and helium, lithium four carbon and helium is 1:1~40:1；When the material of the sacrificial layer is
When silicon nitride, etching gas includes a fluoromethane and helium, and the volume ratio of a fluoromethane and helium is 1:1~40:1.
8. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that first sacrificial layer and second
The forming method of sacrificial layer are as follows: deposit the first sacrificial film on surface layer to be etched；Second is deposited on the first sacrificial film surface
Sacrificial film；Patterned layer is formed on second sacrificial film surface, the patterned layer defines several first sacrificial layers
With the location and shape of the second sacrificial layer；Using the patterned layer as exposure mask, etches second sacrificial film and first and sacrifice
Film until expose it is layer to be etched until, form the first sacrificial layer and the second sacrificial layer.
9. the forming method of autoregistration multiple graphics as claimed in claim 8, which is characterized in that the formation work of the patterned layer
Skill is photoetching process, nanoimprinting process or orientation self-assembly process；The second sacrificial film of the etching and the first sacrificial film
Technique be anisotropic dry etch process.
10. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that the exposure mask film or first
The material of sacrificial layer is polysilicon, amorphous carbon, silicon oxide or silicon nitride, and the material and the first sacrificial layer of the exposure mask film
Or second sacrificial layer material it is different.
11. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that the work of the second sacrificial layer of removal
Skill is dry etch process or wet-etching technology.
12. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that the formation of the exposure mask film
Technique is atom layer deposition process or chemical vapor deposition process.
13. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that the thickness of the exposure mask film
The thickness removed less than the sidewall surfaces along second sacrificial layer.
14. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that described layer to be etched partly to lead
Body substrate.
15. the forming method of autoregistration multiple graphics as described in claim 1, which is characterized in that further include: semiconductor lining is provided
Bottom, it is described layer to be etched positioned at the semiconductor substrate surface.
16. the forming method of autoregistration multiple graphics as claimed in claim 15, which is characterized in that further include: it is located at described half
Conductor substrate and it is layer to be etched between device layer, the device layer includes semiconductor devices and is electrically isolated the semiconductor devices
Dielectric layer.
17. the forming method of autoregistration multiple graphics as claimed in claim 15, which is characterized in that described layer to be etched for polycrystalline
Silicon layer, metal layer or dielectric layer.
18. the forming method of autoregistration multiple graphics as described in claims 14 or 15, which is characterized in that the semiconductor substrate
For silicon substrate.
19. the forming method of autoregistration multiple graphics as claimed in claim 2, which is characterized in that after forming third exposure mask,
Using first exposure mask and third exposure mask as exposure mask, etch described layer to be etched.
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| CN107403719B (en) * | 2016-05-20 | 2021-07-02 | 中芯国际集成电路制造（天津）有限公司 | Method for forming pattern in semiconductor device |
| CN109119330B (en) * | 2017-06-23 | 2021-02-12 | 中芯国际集成电路制造（天津）有限公司 | Method for forming semiconductor device |
| CN111063611B (en) * | 2018-10-17 | 2024-05-10 | 长鑫存储技术有限公司 | Micro pattern etching method |
| CN112825300A (en) * | 2019-11-20 | 2021-05-21 | 长鑫存储技术有限公司 | Semiconductor device and method for manufacturing the same |
| CN112466900B (en) * | 2020-12-23 | 2022-11-25 | 上海集成电路装备材料产业创新中心有限公司 | Image sensor and manufacturing method of deep groove thereof |
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