CN104078329A - Method for forming self-aligned multiple graphs - Google Patents

Method for forming self-aligned multiple graphs Download PDF

Info

Publication number
CN104078329A
CN104078329A CN201310106682.XA CN201310106682A CN104078329A CN 104078329 A CN104078329 A CN 104078329A CN 201310106682 A CN201310106682 A CN 201310106682A CN 104078329 A CN104078329 A CN 104078329A
Authority
CN
China
Prior art keywords
layer
sacrifice layer
sacrifice
mask
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310106682.XA
Other languages
Chinese (zh)
Other versions
CN104078329B (en
Inventor
尚飞
何其旸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Corp
Original Assignee
Semiconductor Manufacturing International Shanghai Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Manufacturing International Shanghai Corp filed Critical Semiconductor Manufacturing International Shanghai Corp
Priority to CN201310106682.XA priority Critical patent/CN104078329B/en
Publication of CN104078329A publication Critical patent/CN104078329A/en
Application granted granted Critical
Publication of CN104078329B publication Critical patent/CN104078329B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask

Abstract

A method for forming self-aligned multiple graphs comprises the following steps: part of the surface of a to-be-etched layer is provided with a plurality of split first sacrificial layers, the surface of the to-be-etched layer is exposed between the adjacent first sacrificial layers, and the surfaces of the first sacrificial layers are provided with second sacrificial layers; part of the second sacrificial layers are removed along the surfaces of side walls of the second sacrificial layers, part of the surfaces of the first sacrificial layers are exposed; mask films are formed on the surface of the to-be-etched layer, the surfaces of the first sacrificial layers and the surfaces of the second sacrificial layers; the mask films undergo back etching, second masks are formed on the surfaces of the first sacrificial layers on two sides of the second sacrificial layers, and first masks are formed on the to-be-etched layer surfaces on two sides of the first sacrificial layers; after the first masks and the second masks are formed, the second sacrificial layers are removed; after the second sacrificial layers are removed, with the second masks serving as masks, the first sacrificial layers are etched until the to-be-etched layer is exposed, and the first sacrificial layers having undergone etching form third mask. The method for forming the self-aligned multiple graphs is simple, and the formed self-aligned multiple graphs are accurate.

Description

The formation method of autoregistration multiple graphics
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to a kind of formation method of autoregistration multiple graphics.
Background technology
Along with the continuous progress of semiconductor technology, the process node of semiconductor device just constantly reduces.But owing to being subject to the restriction of existing photoetching process precision, the mask pattern forming with existing photoetching process is difficult to meet the demand that feature sizes of semiconductor devices continues to reduce, and has contained the development of semiconductor technology.
For on the basis of existing photoetching process, can further dwindle the size of semiconductor device, prior art has proposed a kind of multiple graphics metallization processes.Wherein, the graphical technique of autoregistration quadruple (SaDDP, Self-aligned Double Double Patterning) has application prospect because it can form smaller szie mask.Fig. 1 to Fig. 4 is the cross-sectional view that the employing autoregistration quadruple figure metallization processes of prior art forms the process of mask, comprising:
Please refer to Fig. 1, form the first sacrifice layer 101 on layer to be etched 100 surface, described the first sacrifice layer 101 forms technique and is: form the first sacrificial film on layer to be etched 100 surface; Form some discrete photoresist layers at the part surface of described the first sacrificial film; Taking described photoresist layer as the first sacrificial film described in mask etching until expose layer 100 to be etched.
Please refer to Fig. 2, at layer 100 to be etched and first sacrifice layer 101 surface deposition the second sacrificial film (not shown); Return the second sacrificial film described in etching until expose the first sacrifice layer 101, form the second sacrifice layers 102 on layer to be etched 100 surface of described the first sacrifice layer 101 both sides.
Please refer to Fig. 3, after forming the second sacrifice layer 102, remove the first sacrifice layer 101(as shown in Figure 2); After removing the first sacrifice layer 101, at described the second sacrifice layer 102 surface deposition mask film (not shown); Return mask film described in etching until expose the second sacrifice layer 102, form mask layers 103 on layer to be etched 100 surface of described the second sacrifice layer 102 both sides.
Please refer to Fig. 4, after forming mask layer 103, remove described the second sacrifice layer 102(as shown in Figure 3).Follow-uply can adopt described mask layer 103 etchings layer to be etched 100.
But existing autoregistration quadruple figure metallization processes complexity, can increase process time and cost.
The related data of more multiple graphics metallization processes please refer to the U.S. patent documents that publication number is US2012085733A1.
Summary of the invention
The problem that the present invention solves is to provide a kind of formation method of autoregistration multiple graphics, can simplify the formation method of autoregistration multiple graphics, saves cost.
For addressing the above problem, the invention provides a kind of formation method of autoregistration multiple graphics, comprise: layer to be etched is provided, the part surface of described layer to be etched has some the first discrete sacrifice layers, between adjacent the first sacrifice layer, expose layer to be etched surface, described the first sacrificial layer surface has the second sacrifice layer; Sidewall surfaces along described the second sacrifice layer is removed described the second sacrifice layer of part, the size of described the second sacrifice layer is dwindled, and expose part the first sacrificial layer surface; Form mask film in described layer to be etched, the first sacrifice layer and the second sacrificial layer surface; Return mask film described in etching, until expose the first sacrifice layer and the second sacrificial layer surface, form the second mask in the first sacrificial layer surface of the second sacrifice layer both sides, form the first mask on the layer to be etched surface of the first sacrifice layer both sides; After forming the first mask and the second mask, remove described the second sacrifice layer.
Optionally, also comprise: removing after described the second sacrifice layer, taking described the second mask as mask, the first sacrifice layer described in etching is until expose layer to be etched, and the first sacrifice layer after etching forms the 3rd mask.
Optionally, the technique of removing segment thickness along the sidewall surfaces of described the second sacrifice layer is plasma dry etch process, the parameter of described plasma dry etch process is: air pressure is 0 millitorr～50 millitorr, bias voltage is 0 volt～100 volts, and etching gas total flow is 100 standard ml/min～500 standard ml/min.
Optionally, the material of described the second sacrifice layer is different from the material of the first sacrifice layer, and the material of described the second sacrifice layer is polysilicon, amorphous carbon, silica or silicon nitride.
Optionally, in the time that the material of described the second sacrifice layer is polysilicon, etching gas comprises hydrogen bromide and oxygen, and the volume ratio of described hydrogen bromide and oxygen is 1:1～30:1; In the time that the material of described the second sacrifice layer is silica, etching gas comprises hexafluoroization four carbon and helium, and the volume ratio of described hexafluoroization four carbon and helium is 1:1～40:1; In the time that the material of described the second sacrifice layer is silicon nitride, etching gas comprises a fluoromethane and helium, and the volume ratio of a described fluoromethane and helium is 1:1～40:1.
Optionally, also comprise: before dwindling the second sacrifice layer size, form some sacrifice layers that overlap in described the second sacrificial layer surface, the size of described some overlapping sacrifice layers is all consistent with the first sacrifice layer and the second sacrifice layer, the material of described some sacrifice layers is all different, and some sacrifice layers are different from the material of the first sacrifice layer or the second sacrifice layer; Before forming mask film, sidewall surfaces along each layer of sacrifice layer is removed segment thickness, make the size of every layer of sacrifice layer all be less than the size that is positioned at one deck sacrifice layer under this layer of sacrifice layer, and expose the partial sacrifice layer surface that is positioned at one deck under this layer of sacrifice layer, and described sacrifice layer exposes part the second sacrificial layer surface; Described mask film is also formed at sidewall and the top surface of described some overlapping sacrifice layers; While returning described in etching mask film, also expose some overlapping sacrifice layer top surfaces, respectively every layer of sacrifice layer both sides, the sacrificial layer surface that is positioned at one deck under this layer forms the 4th mask; Removal is positioned at the sacrifice layer at top, and with the some overlapping sacrifice layers of described the 4th mask etching, the second sacrifice layer and the first sacrifice layer until expose layer to be etched.
Optionally, described some overlapping sacrifice layers are 1～4 layer, and the material of described some overlapping sacrifice layers is polysilicon, amorphous carbon, silica or silicon nitride; The technique of removing segment thickness along the sidewall surfaces of each layer of sacrifice layer is plasma dry etch process, the parameter of described plasma dry etch process is: air pressure is 0 millitorr～50 millitorr, bias voltage is 0 volt～100 volts, and etching gas total flow is 100 standard ml/min～500 standard ml/min; In the time that the material of described sacrifice layer is polysilicon, etching gas comprises hydrogen bromide and oxygen, and the volume ratio of described hydrogen bromide and oxygen is 1:1～30:1; In the time that the material of described sacrifice layer is silica, etching gas comprises hexafluoroization four carbon and helium, and the volume ratio of described hexafluoroization four carbon and helium is 1:1～40:1; In the time that the material of described sacrifice layer is silicon nitride, etching gas comprises a fluoromethane and helium, and the volume ratio of a described fluoromethane and helium is 1:1～40:1.
Optionally, the formation method of described the first sacrifice layer and the second sacrifice layer is: in layer surface deposition to be etched the first sacrificial film; In first sacrificial film surface deposition the second sacrificial film; Form patterned layer on described the second sacrificial film surface, described patterned layer has defined position and the shape of some the first sacrifice layers and the second sacrifice layer; Taking described patterned layer as mask, the second sacrificial film and the first sacrificial film described in etching until expose layer to be etched, form the first sacrifice layer and the second sacrifice layer.
Optionally, the formation technique of described patterned layer is photoetching process, nano print technique or directed self-assembly process.
Optionally, the technique of described etching the second sacrificial film and the first sacrificial film is anisotropic dry etch process.
Optionally, before dwindling the size of the second sacrifice layer, the thin thickness of Thickness Ratio first sacrifice layer of described the second sacrifice layer.
Optionally, the material of described mask film, the first sacrifice layer or the second sacrifice layer is polysilicon, amorphous carbon, silica or silicon nitride, and the material of described mask film is different from the material of the first sacrifice layer or the second sacrifice layer.
Optionally, the technique of removal the second sacrifice layer is dry etch process or wet-etching technology.
Optionally, the formation technique of described mask film is atom layer deposition process or chemical vapor deposition method.
Optionally, the thickness of described mask film is less than the gauge of removing along the sidewall surfaces of described the second sacrifice layer.
Optionally, described to be etched layer is Semiconductor substrate.
Optionally, also comprise: Semiconductor substrate is provided, and described layer to be etched is positioned at described semiconductor substrate surface.
Optionally, also comprise: the device layer between described Semiconductor substrate and layer to be etched, described device layer comprises the dielectric layer of semiconductor device and the described semiconductor device of electricity isolation.
Optionally, described to be etched layer is polysilicon layer, metal level or dielectric layer.
Optionally, described Semiconductor substrate is silicon substrate.
Optionally, forming after the 3rd mask, taking described the first mask and the 3rd mask as mask, layer to be etched described in etching.
Compared with prior art, technical scheme of the present invention has the following advantages:
Layer to be etched surface has the first sacrifice layer, and described the first sacrificial layer surface has the second sacrifice layer; From the sidewall surfaces lightening holes thickness of described the second sacrifice layer, make the second sacrifice layer size reduction, and expose part the first sacrificial layer surface; Follow-uply only need form one deck mask film in layer to be etched, the first sacrifice layer and the second sacrificial layer surface, and adopt and once return mask film described in etching technics etching, can form the first mask on the layer to be etched surface of the first sacrifice layer both sides simultaneously, the first sacrificial layer surface in the second sacrifice layer both sides forms the second mask, then forms autoregistration quadruple figure.Described autoregistration quadruple figure only adopts primary depositing technique and once returns etching technics and forms, and formation method is simple, simplifies processing step, saves raw material, reduces costs.
Further, technique from described the second sacrifice layer sidewall surfaces lightening holes thickness is plasma dry etch process, and in described plasma dry etch process, by adjusting air pressure (pressure), bias voltage (bias) and total gas flow rate, realize described etching technics for be parallel to be etched layer surface direction etch rate, be greater than the etch rate perpendicular to layer surface direction to be etched, make described etching technics remove part the second sacrifice layer from the sidewall surfaces of the second sacrifice layer; Meanwhile, described the second sacrifice layer is few perpendicular to the size reduction of layer surface direction to be etched.The size that the second sacrifice layer after etching is parallel to be etched layer surface direction is less than the first sacrifice layer, follow-uply can only form one deck mask film, and only can either form the first mask and the second mask by once returning etching technics simultaneously, then form autoregistration quadruple figure.
Further, the thin thickness of Thickness Ratio first sacrifice layer of described the second sacrifice layer, the height of follow-up the first mask that is formed at the first sacrifice layer both sides, higher than the height of the second mask that is formed at the second sacrifice layer both sides; When removing after described the second sacrifice layer, and taking the second mask after mask etching the first sacrifice layer, can ensure that described the first mask has abundant height and size, so that the follow-up mask that can serve as etching layer to be etched of described the first mask, thereby ensure the stability of etching figure.
Further, form some overlapping sacrifice layers in described the second sacrificial layer surface, and before forming mask film, sidewall surfaces along each layer of sacrifice layer is removed segment thickness, make the size of this layer of sacrifice layer be less than the size that is positioned at one deck sacrifice layer under this layer of sacrifice layer, and make described mask film also cover described some overlapping sacrifice layer sidewall and top surface; Therefore return described in etching after mask film, can form the 4th mask each layer of sacrifice layer both sides respectively, described the 4th mask can form autoregistration multiple graphics jointly with the first mask and the second mask, jointly for etching layer to be etched, thereby makes formed device size less.
Brief description of the drawings
Fig. 1 to Fig. 4 is that prior art adopts autoregistration quadruple figure metallization processes to form the cross-sectional view of the process of mask;
Fig. 5 to Figure 10 is the cross-sectional view of the forming process of the autoregistration multiple graphics described in first embodiment of the invention;
Figure 11 to Figure 13 is the cross-sectional view of the forming process of the autoregistration multiple graphics described in second embodiment of the invention.
Embodiment
As stated in the Background Art, the graphical technique of existing autoregistration quadruple is more complicated, and process costs is higher.
The present inventor finds through research, when prior art forms autoregistration quadruple figure, please continue to refer to Fig. 2, first needs to adopt self-registered technology to form the second sacrifice layer 102 on layer to be etched 100 surface of the first sacrifice layer 101 both sides.Please continue to refer to Fig. 3, remove afterwards described the first sacrifice layer 101, and again adopt self-registered technology to form mask layer 103 in layer to be etched 100 surface of described the second sacrifice layer 102 both sides.Wherein, through twice self-registered technology, to form respectively the second sacrifice layer 102 and mask layer 103, need through twice depositing operation and return etching technics, not only making processing step complexity, also can cause raw-material waste, being unfavorable for promoting aborning.And, described the second sacrifice layer 102 adopts depositing operation and returns etching technics and is formed at the first sacrifice layer 101 both sides, the size of described the second sacrifice layer 102 and pattern are difficult to ensure, easily make the pattern of the mask layer 103 that is formed at described the second sacrifice layer 102 both sides bad, size inaccuracy, cause formed performance of semiconductor device unstable.
Further study through the present inventor, form the first sacrifice layer on layer to be etched surface, described the first sacrificial layer surface has the second sacrifice layer; After the surperficial lightening holes thickness of described the second sacrifice layer, to expose part the first sacrificial layer surface; Afterwards, only need to adopt primary depositing technique and return etching technics, can either form the first mask on the layer to be etched surface of the first sacrifice layer both sides, form the second mask in the first sacrificial layer surface of the second sacrifice layer both sides; Wherein, the second mask is as the mask of etching the first sacrifice layer, and the first sacrifice layer after etching forms the 3rd mask, the autoregistration quadruple figure that described the first mask and the 3rd mask form.The forming process of described autoregistration quadruple figure is simple, only adopts primary depositing technique and once returns etching technics, can simplify processing step, save cost.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
The first embodiment
Fig. 5 to Figure 10 is the cross-sectional view of the forming process of the autoregistration multiple graphics described in the present embodiment.
Please refer to Fig. 5, layer 200 to be etched is provided, in layer to be etched 200 surface deposition the first sacrificial film 201; In first sacrificial film 201 surface deposition the second sacrificial film 202; Form some discrete patterned layer 203 at the part surface of described the second sacrificial film 202, between adjacent pattern layer 203, expose the second sacrificial film 202 surfaces, described patterned layer 203 has defined follow-up some first sacrifice layer (not shown) of formation and position and the shape of the second sacrifice layer (not shown) of needing.
The surface follow-up formation quadruple autoregistration figure of described layer to be etched 200, and taking the quadruple autoregistration figure that formed as mask, layer 200 to be etched described in etching, to form required semiconductor structure.
In one embodiment, also provide Semiconductor substrate (not shown), described layer 200 to be etched is formed at described semiconductor substrate surface; Described layer 200 to be etched is polysilicon layer, metal level or dielectric layer, and the material of described metal level comprises copper, tungsten or aluminium, and the material of described dielectric layer comprises silica, silicon nitride, silicon oxynitride or amorphous carbon.In addition, between described Semiconductor substrate and layer 200 to be etched, can also form device layer (not shown), described device layer comprises the dielectric layer of semiconductor device and the described semiconductor device of electricity isolation.Wherein, described Semiconductor substrate is silicon substrate, silicon-Germanium substrate, silicon carbide substrates, silicon-on-insulator (SOI) substrate, germanium on insulator (GOI) substrate, glass substrate or III-V compounds of group substrate (such as gallium nitride or GaAs etc.); Described semiconductor device comprises transistor, resistor, capacitor, memory etc., in order to form chip or integrated circuit; Described dielectric layer surrounds described semiconductor device, and in order to electric isolation of semiconductor devices, the material of described dielectric layer is one or more in silica, silicon nitride, silicon oxynitride and low-K dielectric material.Follow-up taking autoregistration multiple graphics that the present embodiment was formed as mask etching layer 200 to be etched, the layer 200 to be etched after etching is for the part as forming chip or integrated circuit; Or, layer to be etched 200 mask that can also be used for as etching semiconductor substrate or device layer after etching.
In another embodiment, described layer to be etched is Semiconductor substrate, described Semiconductor substrate is used to subsequent technique that workbench is provided, and described Semiconductor substrate is silicon substrate, silicon-Germanium substrate, silicon carbide substrates, silicon-on-insulator (SOI) substrate, germanium on insulator (GOI) substrate, glass substrate or III-V compounds of group substrate (such as gallium nitride or GaAs etc.).The follow-up mask using autoregistration multiple graphics that the present embodiment was formed as etching semiconductor substrate.
Described the first sacrificial film 201 is used to form the first sacrifice layer, and described the second sacrificial film 202 is used to form the second sacrifice layer.The first sacrificial film 201 is different with the material of the second sacrificial film 202, thereby, follow-up can employing has the size that optionally plasma dry etch process is dwindled the second sacrifice layer, and the pattern of the first sacrifice layer and size can not be affected, can form mask layer at the first sacrifice layer and the second sacrifice layer both sides to only adopt primary depositing technique and once return etching technics simultaneously.The material of described the first sacrificial film 201 or the second sacrificial film 202 is polysilicon, amorphous carbon, silica or silicon nitride, the formation technique of described the first sacrificial film 201 or the second sacrificial film 202 is depositing operation, preferably chemical vapor deposition method.
In addition, the thickness of described the first sacrificial film 201 is thick compared with the thickness of the second sacrificial film 202, and the thickness of described the first sacrificial film 201 is 1000 dust～2000 dusts, and the thickness of described the second sacrificial film 202 is 800 dust～1500 dusts; The Thickness Ratio second of the first sacrifice layer of follow-up formation is sacrificed bed thickness, and the height of the first mask that the aspect ratio of follow-up the second mask that is formed at the second sacrifice layer both sides is formed at the first sacrifice layer both sides is low; When after follow-up removal the second sacrifice layer, and taking the second mask as mask etching the first sacrifice layer to form after the 3rd mask, can ensure that described the first mask has enough height and the size mask as etching layer 200 to be etched.
The formation technique of patterned layer 203 is photoetching process, nano print technique or directed self-assembly process.Because the accuracy of existing graphical technique is limited, in the time ensureing that the size of patterned layer 203 is accurate, the size of described patterned layer 203 cannot continue to dwindle, thereby has limited the characteristic size of the semiconductor device forming, and is unfavorable for the further integrated of device.In the present embodiment, can, accurately forming in the regional extent of single patterned layer 203, form four accurate in size masks, with this mask etching layer 200 to be etched, the size of the semiconductor structure forming is dwindled, and size is accurate, is conducive to that semiconductor device dwindles and stable performance.In the present embodiment, the formation technique of described patterned layer 203 is photoetching process, and the patterned layer 203 that formed is photoresist layer.The formation technique of described photoresist layer is: adopt spin coating proceeding to form photoresist film on the second sacrificial film 202 surfaces; Adopt the graphical described photoresist film of exposure technology, form patterned layer 203; Wherein, the size of described patterned layer 203 is subject to the restriction of described exposure technology accuracy, therefore, adopt photoetching process cannot form the less and accurate in size patterned layer 203 of size, the dimension of picture forming taking described patterned layer 203 as mask etching is restricted, and cannot further dwindle.
Please refer to Fig. 6, taking described patterned layer 203 as mask, described in etching, the second sacrificial film 202 and the first sacrificial film 201(are with reference to figure 5) until expose layer 200 to be etched, part surface at layer 200 to be etched forms some the first discrete sacrifice layer 201a, between adjacent the first sacrifice layer 201a, expose layer to be etched 200 surface, described the first sacrifice layer 201a surface has the second sacrifice layer 202a.
Described in etching, the technique of the second sacrificial film 202 and the first sacrificial film 201 is anisotropic dry etch process, can etching form the first sacrifice layer 201a and the second sacrifice layer 202a that sidewall is vertical with layer to be etched 200 surface.The the first sacrifice layer 201a forming and the second sacrifice layer 202a's is measure-alike; And the figure of the first sacrifice layer 201a and the second sacrifice layer 202a is defined by patterned layer 203, therefore the accuracy to size of patterned layer 203 has determined the first sacrifice layer 201a and the second sacrifice layer 202a accuracy to size.Follow-up formation the first mask in both sides of described the first sacrifice layer 201a, described the first sacrifice layer 201a is used for the position of the first mask that defines follow-up formation.
Please refer to Fig. 7, remove segment thickness along the sidewall surfaces of the second sacrifice layer 202a, the size of described the second sacrifice layer 202a is dwindled, and expose part the first sacrifice layer 201a surface.
Dwindle after the size of described the second sacrifice layer 202a, expose part the first sacrifice layer 201a surface, follow-uply only need to adopt primary depositing technique and once return etching technics, can form the first mask in the first sacrifice layer 201a both sides, and form the second mask in the second sacrifice layer 202b both sides simultaneously, form autoregistration quadruple figure.The simplified manufacturing process of described autoregistration quadruple figure, can save material cost-saving.
It should be noted that, before removing part the second sacrifice layer 202a, remove described patterned layer 203(as shown in Figure 6); In the present embodiment, described patterned layer 203 is photoresist layer, and the technique of removal photoresist layer is acid cleaning process or cineration technics.
The technique of removing part the second sacrifice layer 202a from the sidewall surfaces of described the second sacrifice layer 202a is plasma dry etch process, and described plasma dry etch process is being parallel to etch rate in to be etched layer 200 surface direction, than fast perpendicular to the etch rate in layer to be etched 200 surface direction, realize and dwindle described the second sacrifice layer 202a and be parallel to the size in to be etched layer 200 direction with this, described the second sacrifice layer 202a is less perpendicular to the gauge reduction of layer to be etched 200 direction simultaneously.
Concrete, by adjusting air pressure, bias voltage and the gas gross in described etching technics, to reduce the free path (free path) for the plasma of etching; And plasma free path reduces, improve the probability of scattering of plasma, increase the density that is parallel to the plasma in layer to be etched 200 surface direction, improve thereby reach the object that is parallel to the etch rate in layer to be etched 200 surface direction.
In addition, described etching technics has selectivity for the second sacrifice layer 202a and the first sacrifice layer 201a, in the second sacrifice layer 202a sidewall described in etching, can not dwindle the size of described the first sacrifice layer 201a, kept described the first sacrifice layer 201a size accurately, thereby the position of the first mask of follow-up formation is accurate.And the etch rate of described etching technics is easily controlled, the thickness of the second sacrifice layer 202a of the removal that is therefore etched can accurately be controlled; And before etching technics, the dimension of picture of described the second sacrifice layer 202a is by graph layer 203 explications, the thickness of removed the second sacrifice layer 202a can accurately be controlled, therefore the size of the second sacrifice layer 202a after etching still can keep accurately, and the position of follow-up the second mask that is formed at described the second sacrifice layer 202a both sides is accurate.
The parameter of described plasma dry etch process is: air pressure is 0 millitorr～50 millitorr, and bias voltage is 0 volt～100 volts, and etching gas total flow is 100 standard ml/min～500 standard ml/min.In one embodiment, in the time that the material of described the second sacrifice layer 202a is polysilicon, etching gas comprises hydrogen bromide and oxygen, and the volume ratio of described hydrogen bromide and oxygen is 1:1～30:1.In another embodiment, in the time that the material of described the second sacrifice layer 202a is silica, etching gas comprises hexafluoroization four carbon (C 4f 6) and helium, the volume ratio of described hexafluoroization four carbon and helium is 1:1～40:1.In other embodiments, when the material of described the second sacrifice layer 202a is silicon nitride, etching gas comprises a fluoromethane (CH 3f) and helium, the volume ratio of a described fluoromethane and helium is 1:1～40:1.
Please refer to Fig. 8, form mask film 204 on described layer 200 to be etched, the first sacrifice layer 201a and the second sacrifice layer 202a surface.
Described mask film 204 is used to form the second mask that is positioned at the first mask of the first sacrifice layer 201a both sides and is positioned at the second sacrifice layer 202a both sides.The material of described mask film 204 is polysilicon, amorphous carbon, silica or silicon nitride, and the material of described mask film 204 is different from the material of the first sacrifice layer 201a or the second sacrifice layer 202a, follow-up when described mask film 204 is returned to etching technics to ensure, can not affect the pattern of the first sacrifice layer 201a or the second sacrifice layer 202a; The thickness of described mask film 204 is less than the gauge of removing along the sidewall surfaces of described the second sacrifice layer 202a, after mask film 204 described in follow-up time etching, can expose the first sacrifice layer 201a surface, between the first mask that makes to be formed at the second mask of the first sacrificial layer surface and to be formed at the first sacrifice layer 201a sidewall, have certain distance, the first mask forming and the second mask can form autoregistration quadruple mask pattern.
The formation technique of described mask film 204 is depositing operation, preferably atom layer deposition process or chemical vapor deposition method; Described atom layer deposition process or chemical vapor deposition method can accurately be controlled the thickness of described mask film 204, and the thickness of described mask film 204 is 10 nanometer～30 nanometers; And the thickness of described mask film has determined the size of the first mask and second mask of follow-up formation, therefore the first mask of follow-up formation and the size of the second mask can accurately be controlled.The parameter of described depositing operation is determined by the material that in concrete technology, mask film 204 adopts, and should too not limit, and therefore not to repeat here.
Please refer to Fig. 9, return described in etching mask film 204(as shown in Figure 8), until expose the first sacrifice layer 201a and the second sacrifice layer 202a surface, the first sacrifice layer 201 surfaces in the second sacrifice layer 202a both sides form the second mask 204b, form the first mask 204a on layer to be etched 200 surface of the first sacrifice layer 201a both sides.
Described time etching technics is anisotropic dry etch process, and described anisotropic dry etch process parameter is determined according to material and the thickness of concrete mask film 204, should too not limit, and therefore not to repeat here.In described anisotropic dry etch process, the plasma of etching gas is to the direction bombardment perpendicular to layer to be etched 200 surface, the mask film 204 of the top surface of layer to be etched 200 surface and the first sacrifice layer 201a and the second sacrifice layer 202a be can remove, and described the first mask 204a and the second mask 204b formed.
Described the first mask 204a and the second mask 204b are only by once graphical technique formation, only can accurately forming a patterned layer 203(as shown in Figure 5) regional extent in, can form accurate in size two the first mask 204a and two the second mask 204b, totally four figures as etch mask, i.e. autoregistration quadruple figure; The the first mask 204a forming and the second mask 204b are in the situation that ensureing accuracy, and size is dwindled, and can meet the growth requirement of semiconductor device integrated micro.
Secondly, before forming mask film 204, adopt dry plasma etch technique to dwindle size expose portion the first sacrifice layer 201a surface of described the second sacrifice layer 202a, therefore after forming mask film 204, only can remove the mask film 204 of the top surface of the first sacrifice layer 201a and the second sacrifice layer 202a by once returning etching technics simultaneously, thereby form two the first mask 204a and two the second mask 204b simultaneously.Thereby the autoregistration multiple graphics of the present embodiment, only by primary depositing technique and once return etching technics and can complete, can reduce processing step, cost-saving.
Please refer to Figure 10, after forming the first mask 204a and the second mask 204b, remove described the second sacrifice layer 202a(as shown in Figure 9); Removing after described the second sacrifice layer 202a, taking described the second mask 204b as mask, the first sacrifice layer 201a(is as shown in Figure 9 described in etching) until expose layer 200 to be etched, the first sacrifice layer 201a after etching forms the 3rd mask 201b.
The technique of removing the second sacrifice layer 202a is dry etch process or wet-etching technology, because the etching speed of wet-etching technology is very fast, preferably adopts wet-etching technology at this; In addition,, in the time that the material of described the second sacrifice layer 202a is amorphous carbon, the technique of removing the second sacrifice layer 202a can also be cineration technics.After removing described the second sacrifice layer 202a, expose the first sacrifice layer 201a of described the second sacrifice layer 202a bottom, so that follow-up formation the 3rd mask 201b.
The technique of described etching the first sacrifice layer 201a is anisotropic dry etch process, can form the three mask 201b of sidewall perpendicular to layer to be etched 200 surface, thereby the figure of described the 3rd mask 201b is consistent with the figure of described the second mask 204b, ensureing that in the accurate in size situation of the second mask 204b, the size of described the 3rd mask 201b is accurate; Described the 3rd mask 201b and the first mask 204a are positioned at layer to be etched 200 surface, have determined the figure of etching layer 200 to be etched, thereby can make etching layer to be etched 200 dimension of picture obtaining accurate.
In addition, thick due to Thickness Ratio the second sacrifice layer 202a of described the first sacrifice layer 201a, and the height of described the first mask 204a is determined by the thickness of the first sacrifice layer 201a, the height of the second mask 204b determines by the thickness of the second sacrifice layer 202a, and therefore the height of aspect ratio the second mask 204b of described the first mask 204a is high.After removing the second sacrifice layer 202a and etching the first sacrifice layer 201a, can ensure that described the first mask 204a still has enough height dimensions with etching layer 200 to be etched.
It should be noted that, forming after the 3rd mask 201b, taking described the first mask 204a and the 3rd mask 201b as mask, layer 200 to be etched described in etching; Described in etching, the technique of layer 200 to be etched is anisotropic dry etch process, makes described layer to be etched 200 form required figure to form semiconductor device.
In the present embodiment, form the second sacrifice layer in the first sacrificial layer surface, described the second sacrifice layer size is little compared with the first sacrifice layer, and exposes part the first sacrificial layer surface; Follow-uply only need to adopt primary depositing technique to form mask film in layer to be etched, the first sacrifice layer and the second sacrificial layer surface, and adopt and once return mask film described in etching technics etching, can form the first mask in the first sacrifice layer both sides, form the second mask in the second sacrifice layer both sides.Secondly, described the second sacrifice layer is being after mask etching forms by patterned layer, using plasma dry etch process is carried out etching from the sidewall surfaces of described the second sacrifice layer, with minification, therefore the size that the second sacrifice layer dwindles is easily by etching technics control, the size of the second sacrifice layer is accurate, then makes the position of the first mask and the second mask accurate.And the size of the first mask and the second mask is by the THICKNESS CONTROL of mask film, the first mask of therefore forming and position and the size of the second mask are accurate.
The second embodiment
Figure 11 to Figure 13 is the cross-sectional view of the forming process of the autoregistration multiple graphics described in second embodiment of the invention.
Please refer to Figure 11, layer 300 to be etched is provided, part surface at layer 300 to be etched forms some the first discrete sacrifice layer 301a, between adjacent the first sacrifice layer 301a, expose layer to be etched 300 surface, described the first sacrifice layer 301a surface has the second sacrifice layer 302a, and described the second sacrifice layer 302a surface has the 3rd sacrifice layer 330.
The size of described the 3rd sacrifice layer 330 is consistent with the first sacrifice layer 301a and the second sacrifice layer 302a, the material of described the 3rd sacrifice layer 330 is polysilicon, amorphous carbon, silica or silicon nitride, and the material of described the 3rd sacrifice layer 330 is different from the material of the first sacrifice layer 301a or the second sacrifice layer 302a.
The formation technique of described the first sacrifice layer 301a, the second sacrifice layer 302a and the 3rd sacrifice layer 330 is: in layer to be etched 300 surface deposition the first sacrificial film; In first sacrificial film surface deposition the second sacrificial film; In surface deposition the 3rd sacrificial film of described the second sacrificial film; Form some discrete patterned layer at the part surface of described the 3rd sacrificial film, between adjacent pattern layer, expose the 3rd sacrificial film surface; Taking described patterned layer as mask, the 3rd sacrificial film, the second sacrificial film and the first sacrificial film described in etching are until expose layer 300 to be etched.
The material of described layer 300 to be etched, the first sacrifice layer 301a and the second sacrifice layer 302a and structure are with identical described in the first embodiment, and therefore not to repeat here.
Please refer to Figure 12, remove segment thickness along the sidewall surfaces of the second sacrifice layer 302a, the size of described the second sacrifice layer 302a is dwindled, and expose part the first sacrifice layer 301a surface; Remove segment thickness along the sidewall surfaces of the 3rd sacrifice layer 330, the size of described the 3rd sacrifice layer 330 is dwindled, and the second sacrifice layer 302a surface after exposing portion size and dwindling.
Remove the technique of segment thickness and remove the technique of segment thickness, identical with the technique of the removal of the sidewall surfaces along the second sacrifice layer 202a segment thickness described in the first embodiment along the sidewall surfaces of the second sacrifice layer 302a along the sidewall surfaces of the 3rd sacrifice layer 330, therefore not to repeat here.
Please refer to Figure 13, form mask film on described layer 300 to be etched, the first sacrifice layer 301a, the second sacrifice layer 302a and the 3rd sacrifice layer 330 surfaces; Return mask film described in etching, until expose the surface of layer 300 to be etched, the first sacrifice layer 301a, the second sacrifice layer 302a and the 3rd sacrifice layer 330, the second sacrifice layer 302a surface in the 3rd sacrifice layer 330 both sides forms the 4th mask 304c, the first sacrifice layer 301a surface in the second sacrifice layer 302a both sides forms the second mask 304b, forms the first mask 304a on layer to be etched 300 surface of the first sacrifice layer 301a both sides.
The formation technique of described mask film and time etching technics, with identical described in the first embodiment, do not repeat at this.It should be noted that, the thickness of described mask film also needs to be less than the gauge of removing along described the 3rd sacrifice layer sidewall surfaces, make to there is certain distance between follow-up the 4th mask 304c that is formed at described the 3rd sacrifice layer both sides and the second mask 304b, thereby form autoregistration sixfold figure.
Described the 3rd sacrifice layer 330 of follow-up removal, and with described the 4th mask 304c etching the second sacrifice layer 302a, until expose the first sacrifice layer 301a; Afterwards, then with the 4th mask 304c and second mask 304b etching the first sacrifice layer 301a, until expose layer to be etched 300 surface; Wherein, between the 4th mask and layer 300 to be etched, the second sacrifice layer 302a and the first sacrifice layer 301a through over etching forms the 5th mask.Follow-up with layer 300 to be etched described in described the first mask 304a, the 3rd mask 302b and the 5th mask etching, the dimension of picture after etching can further dwindle.
The first mask, the second mask and the 5th mask that in the present embodiment, form form autoregistration sixfold figure jointly, can make the size of the semiconductor structure after etching further dwindle.
In sum, layer to be etched surface has the first sacrifice layer, and described the first sacrificial layer surface has the second sacrifice layer; From the sidewall surfaces lightening holes thickness of described the second sacrifice layer, make the second sacrifice layer size reduction, and expose part the first sacrificial layer surface; Follow-uply only need form one deck mask film in layer to be etched, the first sacrifice layer and the second sacrificial layer surface, and adopt and once return mask film described in etching technics etching, can form the first mask on the layer to be etched surface of the first sacrifice layer both sides simultaneously, the first sacrificial layer surface in the second sacrifice layer both sides forms the second mask, then forms autoregistration quadruple figure.Described autoregistration quadruple figure only adopts primary depositing technique and once returns etching technics and forms, and formation method is simple, simplifies processing step, saves raw material, reduces costs.
Further, technique from described the second sacrifice layer sidewall surfaces lightening holes thickness is plasma dry etch process, described plasma dry etch process is being parallel to the etch rate of layer surface direction to be etched, is being greater than the etch rate perpendicular to layer surface direction to be etched, can be from sidewall lightening holes the second sacrifice layer, meanwhile, described the second sacrifice layer is few perpendicular to the thickness reduction of layer surface direction to be etched; Thereby the size that can make the second sacrifice layer after etching be parallel to layer surface direction to be etched is less than the first sacrifice layer; Follow-uply can only form one deck mask film, and only can either form the first mask and the second mask by once returning etching technics simultaneously, then form autoregistration quadruple figure.
Further, the thin thickness of Thickness Ratio first sacrifice layer of described the second sacrifice layer, the height of follow-up the first mask that is formed at the first sacrifice layer both sides, higher than the height of the second mask that is formed at the second sacrifice layer both sides; When removing after described the second sacrifice layer, can ensure that described the first mask has the mask of enough height as etching layer to be etched, thereby ensure the stability of etching figure.
Further, form some overlapping sacrifice layers in described the second sacrificial layer surface, and before forming mask film, sidewall surfaces along each layer of sacrifice layer is removed segment thickness, make the size of this layer of sacrifice layer be less than the size that is positioned at one deck sacrifice layer under this layer of sacrifice layer, and make described mask film also cover described some overlapping sacrifice layer sidewall and top surface; Therefore return described in etching after mask film, can form the 4th mask each layer of sacrifice layer both sides respectively, described the 4th mask can form autoregistration multiple graphics jointly with the first mask and the second mask, jointly for etching layer to be etched, thereby makes formed device size less.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.

Claims (20)

1. a formation method for autoregistration multiple graphics, is characterized in that, comprising:
Layer to be etched is provided, and the part surface of described layer to be etched has some the first discrete sacrifice layers, exposes layer to be etched surface between adjacent the first sacrifice layer, and described the first sacrificial layer surface has the second sacrifice layer;
Sidewall surfaces along described the second sacrifice layer is removed segment thickness, the size of described the second sacrifice layer is dwindled, and expose part the first sacrificial layer surface;
Form mask film in described layer to be etched, the first sacrifice layer and the second sacrificial layer surface;
Return mask film described in etching, until expose the first sacrifice layer and the second sacrificial layer surface, form the second mask in the first sacrificial layer surface of the second sacrifice layer both sides, form the first mask on the layer to be etched surface of the first sacrifice layer both sides;
After forming the first mask and the second mask, remove described the second sacrifice layer.
2. the formation method of autoregistration multiple graphics as claimed in claim 1, it is characterized in that, also comprise: after removing described the second sacrifice layer, taking described the second mask as mask, the first sacrifice layer described in etching is until expose layer to be etched, the first sacrifice layer formation the 3rd mask after etching.
3. the formation method of autoregistration multiple graphics as claimed in claim 1, it is characterized in that, the technique of removing segment thickness along the sidewall surfaces of the second sacrifice layer is plasma dry etch process, the parameter of described plasma dry etch process is: air pressure is 0 millitorr～50 millitorr, bias voltage is 0 volt～100 volts, and etching gas total flow is 100 standard ml/min～500 standard ml/min.
4. the formation method of autoregistration multiple graphics as claimed in claim 3, is characterized in that, the material of described the second sacrifice layer is different from the material of the first sacrifice layer, and the material of described the second sacrifice layer is polysilicon, amorphous carbon, silica or silicon nitride.
5. the formation method of autoregistration multiple graphics as claimed in claim 4, is characterized in that, in the time that the material of described the second sacrifice layer is polysilicon, etching gas comprises hydrogen bromide and oxygen, and the volume ratio of described hydrogen bromide and oxygen is 1:1～30:1; In the time that the material of described the second sacrifice layer is silica, etching gas comprises hexafluoroization four carbon and helium, and the volume ratio of described hexafluoroization four carbon and helium is 1:1～40:1; In the time that the material of described the second sacrifice layer is silicon nitride, etching gas comprises a fluoromethane and helium, and the volume ratio of a described fluoromethane and helium is 1:1～40:1.
6. the formation method of autoregistration multiple graphics as claimed in claim 1, it is characterized in that, also comprise: before dwindling the second sacrifice layer size, form some sacrifice layers that overlap in described the second sacrificial layer surface, the size of described some overlapping sacrifice layers is all consistent with the first sacrifice layer and the second sacrifice layer, the material of described some sacrifice layers is all different, and some sacrifice layers are different from the material of the first sacrifice layer or the second sacrifice layer; Before forming mask film, sidewall surfaces along each layer of sacrifice layer is removed segment thickness, make the size of every layer of sacrifice layer all be less than the size that is positioned at one deck sacrifice layer under this layer of sacrifice layer, and expose the partial sacrifice layer surface that is positioned at one deck under this layer of sacrifice layer, and described sacrifice layer exposes part the second sacrificial layer surface; Described mask film is also formed at sidewall and the top surface of described some overlapping sacrifice layers; While returning described in etching mask film, also expose some overlapping sacrifice layer top surfaces, respectively every layer of sacrifice layer both sides, the sacrificial layer surface that is positioned at one deck under this layer forms the 4th mask; Removal is positioned at the sacrifice layer at top, and with the some overlapping sacrifice layers of described the 4th mask etching, the second sacrifice layer and the first sacrifice layer until expose layer to be etched.
7. the formation method of autoregistration multiple graphics as claimed in claim 6, is characterized in that, described some overlapping sacrifice layers are 1～4 layer, and the material of described some overlapping sacrifice layers is polysilicon, amorphous carbon, silica or silicon nitride; The technique of removing segment thickness along the sidewall surfaces of each layer of sacrifice layer is plasma dry etch process, the parameter of described plasma dry etch process is: air pressure is 0 millitorr～50 millitorr, bias voltage is 0 volt～100 volts, and etching gas total flow is 100 standard ml/min～500 standard ml/min; In the time that the material of described sacrifice layer is polysilicon, etching gas comprises hydrogen bromide and oxygen, and the volume ratio of described hydrogen bromide and oxygen is 1:1～30:1; In the time that the material of described sacrifice layer is silica, etching gas comprises hexafluoroization four carbon and helium, and the volume ratio of described hexafluoroization four carbon and helium is 1:1～40:1; In the time that the material of described sacrifice layer is silicon nitride, etching gas comprises a fluoromethane and helium, and the volume ratio of a described fluoromethane and helium is 1:1～40:1.
8. the formation method of autoregistration multiple graphics as claimed in claim 1, is characterized in that, the formation method of described the first sacrifice layer and the second sacrifice layer is: in layer surface deposition to be etched the first sacrificial film; In first sacrificial film surface deposition the second sacrificial film; Form patterned layer on described the second sacrificial film surface, described patterned layer has defined position and the shape of some the first sacrifice layers and the second sacrifice layer; Taking described patterned layer as mask, the second sacrificial film and the first sacrificial film described in etching until expose layer to be etched, form the first sacrifice layer and the second sacrifice layer.
9. the formation method of autoregistration multiple graphics as claimed in claim 8, is characterized in that, the formation technique of described patterned layer is photoetching process, nano print technique or directed self-assembly process; The technique of described etching the second sacrificial film and the first sacrificial film is anisotropic dry etch process.
10. the formation method of autoregistration multiple graphics as claimed in claim 1, is characterized in that, before dwindling the size of described the second sacrifice layer, and the thin thickness of Thickness Ratio first sacrifice layer of described the second sacrifice layer.
The 11. formation methods of autoregistration multiple graphics as claimed in claim 1, it is characterized in that, the material of described mask film or the first sacrifice layer is polysilicon, amorphous carbon, silica or silicon nitride, and the material of described mask film is different from the material of the first sacrifice layer or the second sacrifice layer.
The 12. formation methods of autoregistration multiple graphics as claimed in claim 1, is characterized in that, the technique of removing the second sacrifice layer is dry etch process or wet-etching technology.
The 13. formation methods of autoregistration multiple graphics as claimed in claim 1, is characterized in that, the formation technique of described mask film is atom layer deposition process or chemical vapor deposition method.
The 14. formation methods of autoregistration multiple graphics as claimed in claim 1, is characterized in that, the thickness of described mask film is less than the gauge of removing along the sidewall surfaces of described the second sacrifice layer.
The 15. formation methods of autoregistration multiple graphics as claimed in claim 1, is characterized in that, described layer to be etched is Semiconductor substrate.
The 16. formation methods of autoregistration multiple graphics as claimed in claim 1, is characterized in that, also comprise: Semiconductor substrate is provided, and described layer to be etched is positioned at described semiconductor substrate surface.
The 17. formation methods of autoregistration multiple graphics as claimed in claim 16, it is characterized in that, also comprise: the device layer between described Semiconductor substrate and layer to be etched, described device layer comprises the dielectric layer of semiconductor device and the described semiconductor device of electricity isolation.
The 18. formation methods of autoregistration multiple graphics as claimed in claim 16, is characterized in that, described layer to be etched is polysilicon layer, metal level or dielectric layer.
19. as described in claim 15 or 16 the formation method of autoregistration multiple graphics, it is characterized in that, described Semiconductor substrate is silicon substrate.
The 20. formation methods of autoregistration multiple graphics as claimed in claim 2, is characterized in that, after forming the 3rd mask, and taking described the first mask and the 3rd mask as mask, layer to be etched described in etching.
CN201310106682.XA 2013-03-28 2013-03-28 The forming method of autoregistration multiple graphics Active CN104078329B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310106682.XA CN104078329B (en) 2013-03-28 2013-03-28 The forming method of autoregistration multiple graphics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310106682.XA CN104078329B (en) 2013-03-28 2013-03-28 The forming method of autoregistration multiple graphics

Publications (2)

Publication Number Publication Date
CN104078329A true CN104078329A (en) 2014-10-01
CN104078329B CN104078329B (en) 2019-05-28

Family

ID=51599520

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310106682.XA Active CN104078329B (en) 2013-03-28 2013-03-28 The forming method of autoregistration multiple graphics

Country Status (1)

Country Link
CN (1) CN104078329B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107403719A (en) * 2016-05-20 2017-11-28 中芯国际集成电路制造（天津）有限公司 The method for forming figure in the semiconductor device
CN109119330A (en) * 2017-06-23 2019-01-01 中芯国际集成电路制造（天津）有限公司 A kind of forming method of semiconductor devices
CN111063611A (en) * 2018-10-17 2020-04-24 长鑫存储技术有限公司 Micro-pattern etching method
CN112466900A (en) * 2020-12-23 2021-03-09 上海集成电路装备材料产业创新中心有限公司 Image sensor and manufacturing method of deep groove thereof
CN112825300A (en) * 2019-11-20 2021-05-21 长鑫存储技术有限公司 Semiconductor device and method for manufacturing the same
CN111063611B (en) * 2018-10-17 2024-05-10 长鑫存储技术有限公司 Micro pattern etching method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000221660A (en) * 1999-02-02 2000-08-11 Canon Inc Production of mask structure
US20040023162A1 (en) * 2002-08-01 2004-02-05 Mitsuru Hasegawa Stamper, lithographic method of using the stamper and method of forming a structure by a lithographic pattern
CN101140852A (en) * 2006-09-07 2008-03-12 三星电子株式会社 Method of forming a fine pattern
CN101529557A (en) * 2006-08-30 2009-09-09 美光科技公司 Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
CN101536160A (en) * 2006-11-15 2009-09-16 美光科技公司 Methods of etching a pattern layer to form staggered heights therein and intermediate semiconductor device structures
US20100170868A1 (en) * 2009-01-07 2010-07-08 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
CN102473629A (en) * 2009-08-12 2012-05-23 东京毅力科创株式会社 Plasma generation controlled by gravity-induced gas-diffusion separation (gigds) techniques
CN102779741A (en) * 2011-05-11 2012-11-14 中芯国际集成电路制造(上海)有限公司 Grid electrode etching method
CN102931064A (en) * 2011-08-12 2013-02-13 中芯国际集成电路制造(上海)有限公司 Metal gate forming method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000221660A (en) * 1999-02-02 2000-08-11 Canon Inc Production of mask structure
US20040023162A1 (en) * 2002-08-01 2004-02-05 Mitsuru Hasegawa Stamper, lithographic method of using the stamper and method of forming a structure by a lithographic pattern
CN101529557A (en) * 2006-08-30 2009-09-09 美光科技公司 Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
CN101140852A (en) * 2006-09-07 2008-03-12 三星电子株式会社 Method of forming a fine pattern
CN101536160A (en) * 2006-11-15 2009-09-16 美光科技公司 Methods of etching a pattern layer to form staggered heights therein and intermediate semiconductor device structures
US20100170868A1 (en) * 2009-01-07 2010-07-08 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
CN102473629A (en) * 2009-08-12 2012-05-23 东京毅力科创株式会社 Plasma generation controlled by gravity-induced gas-diffusion separation (gigds) techniques
CN102779741A (en) * 2011-05-11 2012-11-14 中芯国际集成电路制造(上海)有限公司 Grid electrode etching method
CN102931064A (en) * 2011-08-12 2013-02-13 中芯国际集成电路制造(上海)有限公司 Metal gate forming method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107403719A (en) * 2016-05-20 2017-11-28 中芯国际集成电路制造（天津）有限公司 The method for forming figure in the semiconductor device
CN109119330A (en) * 2017-06-23 2019-01-01 中芯国际集成电路制造（天津）有限公司 A kind of forming method of semiconductor devices
CN109119330B (en) * 2017-06-23 2021-02-12 中芯国际集成电路制造（天津）有限公司 Method for forming semiconductor device
CN111063611A (en) * 2018-10-17 2020-04-24 长鑫存储技术有限公司 Micro-pattern etching method
CN111063611B (en) * 2018-10-17 2024-05-10 长鑫存储技术有限公司 Micro pattern etching method
CN112825300A (en) * 2019-11-20 2021-05-21 长鑫存储技术有限公司 Semiconductor device and method for manufacturing the same
CN112466900A (en) * 2020-12-23 2021-03-09 上海集成电路装备材料产业创新中心有限公司 Image sensor and manufacturing method of deep groove thereof

Also Published As

Publication number Publication date
CN104078329B (en) 2019-05-28

Similar Documents

Publication Publication Date Title
US9704974B2 (en) Process of manufacturing Fin-FET device
JP5532303B2 (en) Method for reducing critical dimensions of semiconductor devices
TWI409852B (en) Method for fabricating fine patterns of semiconductor device utilizing self-aligned double patterning
CN101315515B (en) Frequency tripling using spacer mask having interposed regions
US20050127362A1 (en) Sectional field effect devices and method of fabrication
CN103794476A (en) Method for forming self-aligned triple pattern
CN103715080A (en) Forming method of self-aligned double pattern
CN104701158A (en) Self-aligning double patterning formation method
CN102446703A (en) Dual patterning method
CN102446704B (en) Dual patterning method
CN104124168A (en) Method for forming semiconductor structure
CN104078329A (en) Method for forming self-aligned multiple graphs
CN104078366A (en) Manufacturing method for fin structure of dual graphical fin type transistor
CN104425264B (en) The forming method of semiconductor structure
CN104701145B (en) The forming method of semiconductor structure
CN104078330A (en) Method for forming self-aligned triple graphs
CN105655341B (en) The forming method of semiconductor devices
CN101339361A (en) Frequency doubling using spacer mask
CN107799462A (en) The forming method of semiconductor structure
US11652003B2 (en) Gate formation process
CN107968053B (en) Semiconductor device and method of forming the same
US11456174B2 (en) Semiconductor structure and formation method thereof
CN110349845A (en) The method for forming semiconductor structure
CN111986983A (en) Semiconductor structure and forming method thereof
US20070099127A1 (en) Compact integrated capacitor

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant