CN104038158A - Low-noise amplifier structure - Google Patents
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- CN104038158A CN104038158A CN201410247003.5A CN201410247003A CN104038158A CN 104038158 A CN104038158 A CN 104038158A CN 201410247003 A CN201410247003 A CN 201410247003A CN 104038158 A CN104038158 A CN 104038158A
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Abstract
The invention discloses a low-noise amplifier structure. The low-noise amplifier structure comprises a bandgap reference circuit (Bandgap), a digitally-controlled gain circuit (DCG), a signal amplification circuit (Amplifier) and a notch filter circuit (IRnotchfilter) with an adjustable image rejection frequency. An operating frequency signal Vop is amplified through antenna reception, an image signal Vim under image frequency is rejected, and an effective signal is further amplified by a capacitance and inductance resonant circuit (LCtank) to obtain an image rejection (IR) gain response from the reception to the output; through a digital control part, an input quiescent point is controlled so as to maximize the gain of an operating frequency point. The image signal is rejected, namely the gain of the image frequency im is reduced through a notch filter network, a load resonant frequency is higher than the image frequency so to enhance the rejection performance on an image frequency output signal and improve the performance of low-noise amplifier, and thus the overall performance of a superheterodyne radio frequency receiver designed in the future is improved.
Description
Technical field
The present invention relates to amplifier circuit in low noise, relate in particular to a kind of low noise amplifier structure.
Background technology
Low noise amplifier, as first module of radio-frequency transmitter, is also the module that operating frequency is the highest, is bearing the object that amplifying signal is introduced less noise simultaneously, and the performance of whole receiver is had to conclusive impact.The signal receiving due to receiver is little (100 to-50dBm) generally, and the bandwidth of operation of whole system is wider, and mixer noise in receiver is very large (12dB left and right), if be directly connected on a mixer of rear end access, can cause noise amplitude directly to flood signal, real information can not be represented out, when needing to carry out the amplification of signal, only increase a small amount of noise for this reason, the function of Here it is low noise amplifier.
Low noise amplifier need reach following index: in the input range of broadband, realize the coupling of input impedance, avoid energy loss and the reflection interference to antenna; Obtain low-noise factor, improve receiver sensitivity; Obtain enough gain range and gain flatness, reduce noise effect and the nonlinear distortion of late-class circuit; There is lower power consumption.
Broadband receiver is the core of super broad band radio communication, and low noise amplifier is as the first order of receiver, and its performance directly determines the performance of receiver.The power match of low noise amplifier has directly represented the power match index of whole receiver; The noiseproof feature of complete machine is also mainly decided by noise factor and the gain of the first order.The ultra-wideband low-noise amplifier that is applied to ultra-wideband communications must increase the design constraint of ultra broadband characteristic on the basis at index requests such as narrow-band low-noise amplifier low noise, power match, high-gains.Receiver generally can be divided into mirror image inhibition type and zero intermediate frequency type, although zero intermediate frequency type receiver has been avoided mirror image interference, due to its larger DC maladjustment and 1/f noise, makes this structural behaviour not as good as image frequency inhibition type.Image frequency inhibition type receiver radio frequency front end mainly consists of signal amplification circuit (Amplifier), mirror filter and frequency mixer, and wherein mirror filter can significantly suppress image signal.For example, the filter that Digital Enhanced Cordless Telecommunications (DECT) need employing image rejection ratio reaches 80-100dB is with guaranteed performance.This filter function has several different methods to realize at present, for example, adopt SAW (Surface Acoustic Wave) filter (SAW) or ceramic filter, but realize outward because such filter is sheet, greatly increased integrated difficulty, thereby it is integrated to realize monolithic system.By contrast, the interior notch filter of sheet is without this restriction.Although active notch filter can utilize Characteristics of Negative Resistance of Transistor to improve inductance parasitism and realize high-performance to improve the method for the whole Q value of network, yet for power problems passive filter, can realize this characteristic of zero-power, at radio frequency band, can design high performance passive notch filter.
Therefore, those skilled in the art is devoted to develop a kind of Novel low noise amplifier architecture.
Summary of the invention
Because the above-mentioned defect of prior art, technical problem to be solved by this invention is to provide a kind of Novel low noise amplifying circuit with image signal inhibit feature, numerical control gain adjustable function, automatic biasing function.
For achieving the above object, the invention provides a kind of low noise amplifier structure, comprise band-gap reference module and low noise amplification module, described band-gap reference module comprises band-gap reference unit, numerical control unit and control signal generator, described band-gap reference unit and described control signal generator output signal to described numerical control unit, and by producing band gap voltage, collaborative numerical control unit is adjusted, the output voltage of calibration band gap base modules, the direct current biasing of adjustment low noise amplification module; Described low noise amplification module comprises signal amplification circuit and image-reject filter, and described signal amplification circuit receives the output signal of described numerical control unit and carries out low noise amplification, and by described image-reject filter, image signal is suppressed.
Further, described low noise amplifier arrangement works frequency is 20GHz.
Further, described signal amplification circuit adopts LC shunt circuit at output.
Further, described band-gap reference unit adopts band gap voltage produce and copy supercharging technology, and band gap voltage temperature dependency is little and that magnitude of voltage is high carries out voltage rising, keeps low temperature correlation simultaneously.Overcome the fixedly low-voltage output structure of conventional voltage benchmark, increase the design flexibility of band gap.Wherein, temperature dependency is little refers to that temperature coefficient is less than 100ppm/ ℃; Magnitude of voltage is high refers to that magnitude of voltage is 1.2v.
Further, the high voltage reference signal that described numerical control unit produces described band-gap reference unit is carried out Voltage-current conversion, guarantee the temperature coefficient that it is low, and by ambipolar current mirror, reference current is carried out to current-voltage conversion, guarantee the direct current biasing to rear class low noise amplifier, stable operating point.
Further, described control signal generator is sampled by gain, produce digital control signal Di (i=1-3) and input to numerical control unit, produce corresponding digital controlled signal Ci (i=1-8), the high voltage that band-gap reference is imported into changes conversion multiple when carrying out voltage-to-current-voltage transitions, produce a temperature dependency little, the band gap voltage of the bipolar device that size is adjustable, exports low noise amplifier to.Wherein, temperature dependency is little refers to that temperature coefficient is less than 100ppm/ ℃.
Further, described signal amplification circuit adopts adjustable automatic biasing structure on sheet, all adjustable to the gain of described signal amplification circuit and Input matching.
Further, described signal amplification circuit adopts cascode structure.Strengthen the isolation of input and output, reduce the Miller effect of two-port, improve gain, reduce noise, reduce load lc circuit and connect impact for the coupling of inputting.
Further, described image-reject filter is by produce a resistance that is less than 0.2 Ω under image frequency, by the mutual conductance current signal small-signal ground connection of input signal conversion, output contained be less than the mirror image of 10% image component to amplify; Meanwhile, guarantee to be approximately high impedance under operating frequency, guarantee the undistorted amplification of signal under operating frequency.Wherein, high impedance is greater than 2k Ω.
Further, described image-reject filter adopts passive component manufacture on sheet, does not produce power consumption in mirror image process of inhibition, realizes zero-power filter structure.
For realizing stable automatic biasing, the present invention introduces a band-gap reference unit, produces the little band gap voltage of temperature dependency, and by amplifier, realizes the conversion of voltage-voltage, obtain and temperature and technique and the little high reference voltage of power supply correlation, for follow-up automatic biasing provides safeguard.Circuit adopts numerical control module, and high reference voltage is controlled, and further realizes quiescent operation biasing.
For realizing image rejection function, the present invention adopts passive three rank notch filters, under image frequency signal, produce Low ESR, filter is introduced variable capacitance simultaneously, make image frequency adjustable, the working frequency range of magnascope image signal, realizes good image rejection function, filter is introduced capacitance simultaneously, realizes zero-power.
For realizing high-gain, amplifier section of the present invention adopts cascodes, strengthens input and output isolation, improves gain, and adopts LC network in parallel, and working frequency range signal is further amplified, and guarantees that resonance frequency is working frequency points, realizes gain and maximizes.
Below with reference to accompanying drawing, the technique effect of design of the present invention, concrete structure and generation is described further, to understand fully object of the present invention, feature and effect.
Accompanying drawing explanation
Fig. 1 is the low noise amplifier structural system schematic diagram of a preferred embodiment of the present invention.
Fig. 2 is the structure chart of the band-gap reference unit of a preferred embodiment of the present invention.
Fig. 3 is the control signal generator of a preferred embodiment of the present invention and the structure chart of numerical control unit.
Fig. 4 is the signal amplification circuit of a preferred embodiment of the present invention and the structure chart of image-reject filter.
Fig. 5 is the low noise amplifier S performance parameters curve that the hyperfrequency of a preferred embodiment of the present invention has image rejection function.
Fig. 6 is the low noise amplifier noiseproof feature curve that the hyperfrequency of a preferred embodiment of the present invention has image rejection function.
Embodiment
As shown in the figure, the technical scheme that the present invention solves is: the invention provides the low noise amplifier structure that a kind of 20GHz operating frequency has image rejection function, comprise band-gap reference module and low noise amplification module, described band-gap reference module comprises band-gap reference unit, numerical control unit and control signal generator, described band-gap reference unit and described control signal generator output signal to described numerical control unit, by producing band gap voltage, collaborative numerical control unit is adjusted, the output voltage of calibration band gap base modules, adjust the direct current biasing of low noise amplification module, described low noise amplification module comprises signal amplification circuit and image-reject filter, and described signal amplification circuit receives the output signal of described numerical control unit and carries out low noise amplification, and by described image-reject filter, image signal is suppressed.
Containment is positioned at the image signal Vim under image frequency, and by capacitor and inductor resonant tank, useful signal is further amplified, obtain suppressing (IR) gain response from receiving the mirror image of output, adopt numerical control part to be controlled input quiescent point, the gain of working frequency points is maximized, realize low noise amplification and the image rejection function of signal.Specific embodiments is with reference to Fig. 1, and it is by band-gap reference unit, numerical control unit, control signal generator circuit, signal amplification circuit and image-reject filter the electric circuit constitute.The wherein generation of band-gap reference unit and temperature, reference voltage that supply voltage correlation is low, and by numerical control unit, reference voltage is adjusted.Wherein the input signal of numerical control unit is generated by control signal generator, and the calibration band gap voltage that numerical control unit is produced is input in low noise amplifier, guarantees the stable of quiescent point.Signal amplification circuit receives useful signal Vop and image signal Vim, and adopts image frequency filter circuit to be discharged image signal, makes circuit output end mouth present the output signal that image-frequency rejection ratio is high.
Fig. 2 shows band-gap reference element circuit schematic diagram.This circuit is comprised of start-up circuit, band gap core circuit, band gap voltage voltage-multiplying circuit, wherein PMOS pipe P1, NMOS pipe N1, N2, N3 and N4 form start-up circuit, and it act as avoids because degeneracy causes band gap basic module to start zero point in the process of power supply electrifying.Degree of depth linear zone, P1 place, it act as provides a R constant, weakens the voltage cause owing to the powering on fast effect that raise, and Ni (i=1-4) should meet VDD should be greater than four pipes threshold voltage and, to guarantee the conducting of 4 N pipes, outflow of bus current raises R1 terminal voltage.And after band gap basic module is in running order, the voltage of R1 upper end and the voltage difference of VDD should be greater than the threshold voltage of 4 N pipes, with the start-up circuit under guaranteeing in working order, there is no the loss of electric current.Band gap basic module is managed P2, P3 and P4 by P, amplifier A1, and resistance R 1, R2, R3, R4 also has bipolar transistor Q1, and Q2 and Q3 form.P2 and P3 are current-mirror structure, and the electric current I 1 that guarantees to flow through this two-way is identical with I2, and because start-up circuit is in off state, so electric current I 1 will flow into R1 completely, Q1 branch road, and the electric current of assurance amplifier A1 lower end two branch roads is identical.Band gap produces and is produced by R3, and it is upper that the voltage difference of Q1 and Q2 drops on R3, and this voltage difference is:
In formula, Δ VBE is Q1, the base-emitter voltage difference of Q2 pipe, M is the size ratio of two pipes, K is Boltzmann constant, T is absolute temperature, q be lowest charge with the quantity of electric charge.Therefore can on R3, produce one with the proportional magnitude of voltage of temperature.In the present invention, R3 is decided to be to metal mold resistance, this is because the temperature coefficient of this resistance is minimum, guarantees that temperature coefficient and the Δ VBE of electric current I 1 and I2 is proportional, reduces to float due to the temperature of R3 the variations in temperature of introducing.Amplifier A1 makes R1 by force, and the port voltage of R2 equates, with the error that reduces to cause due to port voltage mismatch.Size ratio by P4 with P3, obtains flowing through the current value I 3 on P4 road, and due to electric current I 3 and front stage circuits mirror-image copies, so this electric current has identical temperature characterisitic.This electric current flows into N trap type resistance R 4 and transistor Q3, choose this resistance and transistorized reason is, the temperature drift that this resistance type can cancellation current itself raises with temperature, in R4 upper end, produce the band gap voltage little with temperature dependency, the negative temperature coefficient of the base-emitter of Q3 pipe can further be guaranteed the counteracting of Positive and Negative Coefficient Temperature, reaches optimum temperature effect.Band gap voltage voltage-multiplying circuit is by amplifier A2, and P manages P5, and resistance R 5, and R6 forms, and of the present invention times of compression functions, based on feedback principle, adopts A2 to make voltage VX equate by force with VY, and by the reasonable value of R5 and R6, the electric current that can make this branch road is certain value.Due to VY and temperature dependency less, so the present invention adopts resistance R 5 and the R6 of two kinds of reverse temperatures coefficient, can make two resistance temperature coefficient at room temperature and be approximately zero, realizes the electric current I 4 that optimum temperature coefficient correlation is little.By the breadth length ratio to P5, appropriately select, can obtain P5 grid voltage VP5, this multiplication of voltage principle by voltage-to-current-voltage transitions, realizes multiplication of voltage effect.R5, the temperature coefficient condition that R6 should be satisfied is:
Fig. 3 has provided control signal device and numerical control unit circuit module schematic diagram.By band gap voltage VP5, be carried in P pipe Pi (i=6-13) upper, at drain terminals at different levels, produce quantitative output current.The present invention is set as 1:2:3:4:5:6:7:8 by the size ratio of these 8 pipes, to realize each weight, the switch arrays of each P pipe below are controlled by control signal generator, sampling according to receiver rear end to signal, produce 3 digital control signal (D1, D2 and D3), to the P tube current conducting on inductive switch whether this tribute signal is controlled 8 bit switches (S1-S8) by control signal generator, and then control.Finally 8 bit switch electric currents flow out from VB port thus, carry out the control to circuit.
Fig. 4 has provided signal amplification circuit and mirror image suppresses module circuit diagram, and wherein mirror image suppresses module by capacitor C 4, C5, and C6 and inductance L 2 form.Remainder is low noise amplifier structure.This circuit adopts pi type input matching network (C2, L1 and Q4 base terminal electric capacity) to realize Broadband Matching, utilizes negative feedback resistor R8 to produce input port equivalent input impedance.Capacitor C 1, C7 is capacitance, avoids extra power loss, by Broadband Matching, can the out-of-band noise signal of filtering, and utilize Q4 that input voltage is converted to small-signal current.The image removing circuit forming by passive component, the output signal of Q4 collector electrode is carried out to further filtering, filtering method of the present invention is to guarantee that this network presents Low ESR under image frequency, and under operating frequency, present higher resistance, the image signal composition Iim of mutual conductance electric current will flow into trap circuit like this, useful signal Iop can flow into Q5 emitter, further amplifies.At Q5 collector electrode, electric current output, the resonance effect by inductance L 3 with capacitor C 8 produces resonance under operating frequency, guarantees the maximization that useful signal amplifies at this point.In addition, it is that this structure can produce Low ESR under image frequency that the design adopts the another one reason of LC resonant cavity, to weaken because mirror image suppresses module amplification at output port to the incomplete reserved image signal of image signal filtering.The biasing circuit of this circuit only has unique voltage VB, be with traditional circuit mode difference, this biasing is not provided by voltage source, but current source in Fig. 3 is setovered, by the injection with the little electric current of temperature dependency, stablize the quiescent point of Q4 pipe, produce the low noise amplifier of temperature resistance.And the stable of Q4 can further be guaranteed the stable of Q5 working point and then the operating state of stable integrated circuit.
Fig. 5 is whole low noise amplifier S performance parameters curve.In figure, marked the input reflection quantization parameter (S11) of circuit and the performance characterization of power gain parameter (S21), provided in the performance situation of adding C4 front and back system.As seen from the figure, adding of C4 improved Input matching effect and the mirror image inhibition situation under operating frequency greatly, at B point, and the superperformance of can realize-17dB of the Input matching of circuit, image rejection ratio is brought up to 33.59dB from original 29.57dB simultaneously.Visible, this structure all has very high mirror image rejection before and after improved properties.
Fig. 6 has provided the noiseproof feature curve of circuit.Owing to image signal having been carried out to significantly suppress, therefore the noise under image frequency presents larger noise factor.And under operating frequency, because useful signal is reasonably mated input and unperturbed, amplify, so this frequency presents good noiseproof feature.
More than describe preferred embodiment of the present invention in detail.The ordinary skill that should be appreciated that this area just can design according to the present invention be made many modifications and variations without creative work.Therefore, all technical staff in the art, all should be in the determined protection range by claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (9)
1. a low noise amplifier structure, it is characterized in that, comprise band-gap reference module and low noise amplification module, described band-gap reference module comprises band-gap reference unit, numerical control unit and control signal generator, described band-gap reference unit and described control signal generator output signal to described numerical control unit, and by producing band gap voltage, collaborative numerical control unit is adjusted, the output voltage of calibration band gap base modules, the direct current biasing of adjustment low noise amplification module; Described low noise amplification module comprises signal amplification circuit and image-reject filter, and described signal amplification circuit receives the output signal of described numerical control unit and carries out low noise amplification, and by described image-reject filter, image signal is suppressed.
2. low noise amplifier structure as claimed in claim 1, is characterized in that, described signal amplification circuit adopts LC shunt circuit at output.
3. low noise amplifier structure as claimed in claim 1, it is characterized in that, described band-gap reference unit adopts band gap voltage produce and copy supercharging technology, and band gap voltage temperature dependency is little and that magnitude of voltage is high carries out voltage rising, keeps low temperature correlation simultaneously; Overcome the fixedly low-voltage output structure of conventional voltage benchmark, increase the design flexibility of band gap.
4. low noise amplifier structure as claimed in claim 1, it is characterized in that, the high voltage reference signal that described numerical control unit produces described band-gap reference unit is carried out Voltage-current conversion, guarantee the temperature coefficient that it is low, and by ambipolar current mirror, reference current is carried out to current-voltage conversion, guarantee the direct current biasing to rear class low noise amplifier, stable operating point.
5. low noise amplifier structure as claimed in claim 1, it is characterized in that, described control signal generator is sampled by gain, produce digital control signal Di (i=1-3) and input to numerical control unit, produce corresponding digital controlled signal Ci (i=1-8), the high voltage that band-gap reference is imported into changes conversion multiple when carrying out voltage-to-current-voltage transitions, produces a temperature dependency little, the band gap voltage of the bipolar device that size is adjustable, exports low noise amplifier to.
6. low noise amplifier structure as claimed in claim 1, is characterized in that, described signal amplification circuit adopts adjustable automatic biasing structure on sheet, all adjustable to the gain of described signal amplification circuit and Input matching.
7. low noise amplifier structure as claimed in claim 1, is characterized in that, described signal amplification circuit adopts cascode structure; Strengthen the isolation of input and output, reduce the Miller effect of two-port, improve gain, reduce noise, reduce load lc circuit and connect impact for the coupling of inputting.
8. low noise amplifier structure as claimed in claim 1, it is characterized in that, described image-reject filter is by produce a resistance that is less than 0.2 Ω under image frequency, and the mutual conductance current signal small-signal ground connection by input signal conversion, contains output and be less than 10% image component; Meanwhile, guarantee to be approximately high impedance under operating frequency, guarantee the undistorted amplification of signal under operating frequency.
9. low noise amplifier structure as claimed in claim 1, is characterized in that, described image-reject filter adopts passive component manufacture on sheet, does not produce power consumption in mirror image process of inhibition, realizes zero-power filter structure.
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Cited By (11)
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| CN105720929A (en) * | 2016-01-22 | 2016-06-29 | 西安电子科技大学 | Wide and high-frequency and low-noise amplifier with self-bias band gap |
| CN106026941A (en) * | 2016-05-09 | 2016-10-12 | 上海华虹宏力半导体制造有限公司 | Low-noise amplifier and radio frequency terminal |
| CN109257022A (en) * | 2018-11-02 | 2019-01-22 | 电子科技大学 | A kind of working frequency levels off to fT/ 2 broad band amplifier |
| CN112262528A (en) * | 2018-08-01 | 2021-01-22 | 阿尔戈半导体有限公司(He 359654) | Digital power amplifier with filtered output |
| CN113794454A (en) * | 2021-08-11 | 2021-12-14 | 西安电子科技大学 | Single-ended input reflection amplifier circuit based on cross-coupling negative resistance circuit |
| CN114584079A (en) * | 2022-02-17 | 2022-06-03 | 锐石创芯(深圳)科技股份有限公司 | Low-noise amplifying circuit |
| CN114646793A (en) * | 2022-05-23 | 2022-06-21 | 江苏米特物联网科技有限公司 | Characteristic current signal detection circuit |
| CN114793093A (en) * | 2022-04-28 | 2022-07-26 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
| CN114866039A (en) * | 2022-07-07 | 2022-08-05 | 成都嘉纳海威科技有限责任公司 | Low-power-consumption transmitting multifunctional chip |
| WO2023098918A1 (en) * | 2021-11-30 | 2023-06-08 | 东南大学 | Second-order adjustable lc notch filter for pole zero tracking |
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| CN104601115A (en) * | 2014-11-25 | 2015-05-06 | 电子科技大学 | Sensitivity function based wide-temperature-range filter design method |
| CN105720929A (en) * | 2016-01-22 | 2016-06-29 | 西安电子科技大学 | Wide and high-frequency and low-noise amplifier with self-bias band gap |
| CN105720929B (en) * | 2016-01-22 | 2018-10-26 | 西安电子科技大学 | A kind of wide high-frequency low-noise acoustic amplifier of band gap automatic biasing |
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| CN109257022B (en) * | 2018-11-02 | 2021-08-10 | 电子科技大学 | Working frequency approaches to fTBroadband amplifier of/2 |
| CN113794454A (en) * | 2021-08-11 | 2021-12-14 | 西安电子科技大学 | Single-ended input reflection amplifier circuit based on cross-coupling negative resistance circuit |
| CN113794454B (en) * | 2021-08-11 | 2023-07-04 | 西安电子科技大学 | Single-ended input reflection amplifier circuit based on cross-coupling negative resistance circuit |
| WO2023098918A1 (en) * | 2021-11-30 | 2023-06-08 | 东南大学 | Second-order adjustable lc notch filter for pole zero tracking |
| CN114584079A (en) * | 2022-02-17 | 2022-06-03 | 锐石创芯(深圳)科技股份有限公司 | Low-noise amplifying circuit |
| CN114793093A (en) * | 2022-04-28 | 2022-07-26 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
| CN114793093B (en) * | 2022-04-28 | 2024-04-12 | 西安工程大学 | Ultra-wideband protocol low-noise amplifier with anti-interference function |
| CN114646793A (en) * | 2022-05-23 | 2022-06-21 | 江苏米特物联网科技有限公司 | Characteristic current signal detection circuit |
| CN114866039A (en) * | 2022-07-07 | 2022-08-05 | 成都嘉纳海威科技有限责任公司 | Low-power-consumption transmitting multifunctional chip |
| CN114866039B (en) * | 2022-07-07 | 2022-11-11 | 成都嘉纳海威科技有限责任公司 | Low-power-consumption transmitting multifunctional chip |
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