CN104009128A - Preparing method of amorphous silicon membrane light trapping structure for solar cell - Google Patents
Preparing method of amorphous silicon membrane light trapping structure for solar cell Download PDFInfo
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- CN104009128A CN104009128A CN201410259079.XA CN201410259079A CN104009128A CN 104009128 A CN104009128 A CN 104009128A CN 201410259079 A CN201410259079 A CN 201410259079A CN 104009128 A CN104009128 A CN 104009128A
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- Prior art keywords
- amorphous silicon
- substrate
- silicon membrane
- light trapping
- trapping structure
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 60
- 239000012528 membrane Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 238000002360 preparation method Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 239000003595 mist Substances 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 229910001385 heavy metal Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 239000002923 metal particle Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 238000001228 spectrum Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000001603 reducing effect Effects 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000985 reflectance spectrum Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparing method of an amorphous silicon membrane light trapping structure for a solar cell, the reflectivity of a membrane can be reduced. The preparing method comprises the first step of cleaning a substrate, the second step of depositing an amorphous silicon membrane on the surface of the substrate, the third step of carrying out nanosecond laser scanning on the amorphous silicon membrane deposited on the surface of the substrate, and the light trapping structure is formed on the surface of the amorphous silicon. Due to the fact that the amorphous silicon membrane is scanned through a nanosecond laser, an obvious peak structure can be formed on the surface of the amorphous silicon membrane, the reflectivity of the amorphous silicon membrane can be greatly reduced, the smallest reflectivity in the wavelength raging from 300 nm to 1100 nm can reach to 0.8 percent, the reflectivity reducing effect is obvious, broadband spectrum reflectivity reducing in the whole solar radiation spectral region is basically achieved, the suede light trapping structure prepared with the method has the advantages that large-area preparing is easy to carry out, the production technology is mature, and cost is low, and the preparing method is suitable for being applied and popularized in the technical field of semiconductor manufacturing.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, be specifically related to a kind of amorphous silicon membrane light trapping structure preparation method for solar cell.
Background technology
Solar cell is a kind of semiconductor device, and it can be directly electric energy by the transform light energy of the sun.While working due to it, without water, oil, fuel etc., as long as there is light just can generate electricity, thereby can be rated as the regenerative resource of the most clean in the world today, environmental protection.Innumerable and there is stability based on solar energy, there is very high safety guarantee simultaneously.Therefore, solar cell can become one of main selection of utilization of new energy resources undoubtedly.
Fall into and only improve thin film solar cell light absorption and then improve one of key technology of its efficiency.Fall into light measure and mainly take evaporation antireflective film or prepare matte on surface, from anti-reflection effect, matte is better than antireflective film, thus solar cell to adopt matte technology be to improve one of the effective measures of the efficiency of battery.
Matte light trapping structure based on silicon face in prior art mainly, by chemical corrosion method, normally utilizes alkaline corrosion liquid (as NaOH, KOH etc.) that monocrystalline silicon/polysilicon surface is corroded and formed.Although monocrystalline silicon surface is corroded and manufactures the matte form and can reach in the scattering of crystal silicon layer the object that increases light absorption by increasing light, still have over 30% luminous energy to fall by reflection loss due to air and crystal silicon interfacial refraction rate difference.And the preparation method of additive method a kind of polysilicon solar cell matte as disclosed in CN1983645A, reflectivity under wavelength 400-1000nm is also more than 20%, the reflectivity of amorphous silicon membrane is higher, causes the efficiency of light absorption of non-crystal silicon solar cell lower.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of amorphous silicon membrane light trapping structure preparation method for solar cell that can reduce reflectivity of optical thin film.
The present invention solves the problems of the technologies described above adopted technical scheme: should, for the amorphous silicon membrane light trapping structure preparation method of solar cell, comprise the following steps:
A, substrate is carried out to clean;
B, at substrate surface deposition of amorphous silicon films;
C, to being deposited on the amorphous silicon membrane of substrate surface, carry out nanosecond laser scanning, thereby form light trapping structure in amorphous silicon surfaces.
Further, in steps A, to substrate, adopt mode as described below to carry out clean: first, substrate to be immersed in the solution of the concentrated sulfuric acid and potassium bichromate allotment and to remove surperficial heavy metal particles and other impurity; Then use washed with de-ionized water substrate; Then substrate is carried out respectively in acetone and absolute ethyl alcohol to ultrasonic cleaning; Finally with deionized water, repeatedly rinse substrate and be placed in alcohol.
Further, in acetone and absolute ethyl alcohol, to carry out respectively the time of ultrasonic cleaning be 15min to substrate.
Further, before carrying out step B, first substrate is dried up with nitrogen.
Further, in step B, adopt PECVD chemical vapour deposition technique at substrate surface deposition of amorphous silicon films, and to PECVD reative cell, pass into silane SiH in the process of deposition
4mist with argon Ar.
Further, described SiH
4according to ratio as described below, mix Ar/SiH with the mist of Ar gas
4ratio range be 1～20.
Further, in step C, to being deposited on the amorphous silicon membrane of substrate surface, to carry out the concrete grammar of nanosecond laser scanning as follows: the amorphous silicon membrane preparing is put into closed chamber, and be evacuated to 1 * 10
-3pa or following; Pass into SF
6gas; Use 532nm laser scanning film surface, laser repetition rate is 1-10Hz, and pulse duration is 6-10ns, and energy density is 3mJ/cm
2, sweep speed is 0.4 μ m/s.
Further, described substrate is glass substrate or ceramic substrate.
Beneficial effect of the present invention: the amorphous silicon membrane light trapping structure preparation method for solar cell of the present invention is by scanning amorphous silicon membrane by nanosecond laser, on amorphous silicon membrane surface, can form obvious peak structure, can greatly reduce the reflectivity of amorphous silicon membrane, reflectivity under wavelength 300-1100nm is minimum can reach 0.8%, anti-reflection successful, substantially realized the wide spectrum anti-reflection in whole solar radiation spectral region, and, adopt this kind of method to prepare matte light trapping structure, there is the large area of being easy to preparation, mature production technology, advantage with low cost.
Accompanying drawing explanation
Fig. 1 is the amorphous silicon membrane reflectance spectrum before nanosecond laser is processed;
Fig. 2 is the amorphous silicon membrane reflectance spectrum after nanosecond laser scanning.
Embodiment
In order to solve the higher problem of amorphous silicon membrane reflectivity in prior art, the invention provides a kind of new amorphous silicon membrane light trapping structure preparation method for solar cell, the method is by scanning amorphous silicon membrane by nanosecond laser, on amorphous silicon membrane surface, can form obvious peak structure, can greatly reduce the reflectivity of amorphous silicon membrane, reflectivity under wavelength 300-1100nm is minimum can reach 0.8%, anti-reflection successful, substantially realized the wide spectrum anti-reflection in whole solar radiation spectral region, and, adopt this kind of method to prepare matte light trapping structure, there is the large area of being easy to preparation, mature production technology, advantage with low cost.Concrete, should, for the amorphous silicon membrane light trapping structure preparation method of solar cell, comprise the following steps:
A, substrate is carried out to clean;
B, at substrate surface deposition of amorphous silicon films;
C, to being deposited on the amorphous silicon membrane of substrate surface, carry out nanosecond laser scanning, thereby form light trapping structure in amorphous silicon surfaces.
In the above-described embodiment, in steps A, to the clean of substrate, can adopt various ways, as long as substrate can be cleaned up, for the effect that guarantees to clean, the present invention adopts mode as described below to carry out clean to substrate: first, substrate is immersed in the solution of the concentrated sulfuric acid and potassium bichromate allotment and removes surperficial heavy metal particles and other impurity; Then use washed with de-ionized water substrate; Then substrate is carried out respectively in acetone and absolute ethyl alcohol to ultrasonic cleaning; Finally with deionized water, repeatedly rinse substrate and be placed in alcohol.Further, in acetone and absolute ethyl alcohol, to carry out respectively the time of ultrasonic cleaning be 15min to substrate.
For the ease of at substrate surface deposition of amorphous silicon films, before carrying out step B, first substrate is dried up with nitrogen, thereby make substrate surface not stay any liquid.
In the mode to substrate surface deposition of amorphous silicon films, can have multiplely, as preferably, in step B, adopt PECVD chemical vapour deposition technique at substrate surface deposition of amorphous silicon films, and to PECVD reative cell, pass into silane SiH in the process of deposition
4mist with argon Ar.PECVD chemical vapour deposition technique is comparatively ripe technology, and deposition effect is good, and to PECVD reative cell, passes into silane SiH in the process of deposition
4with the mist of argon Ar, can guarantee the deposition effect of amorphous silicon membrane.Further, described SiH
4according to ratio as described below, mix Ar/SiH with the mist of Ar gas
4ratio range be 1～20.
In addition, in step C, to being deposited on the amorphous silicon membrane of substrate surface, to carry out the concrete grammar of nanosecond laser scanning as follows: the amorphous silicon membrane preparing is put into closed chamber, and be evacuated to 1 * 10
-3pa or following; Pass into SF
6gas; Use 532nm laser scanning film surface, laser repetition rate is 1-10Hz, and pulse duration is 6-10ns, and energy density is 3mJ/cm
2, sweep speed is 0.4 μ m/s.
Embodiment
The substrate of choosing in the present embodiment is glass substrate, and the first step is carried out clean to glass substrate; First, glass substrate is immersed in the solution of the concentrated sulfuric acid and potassium bichromate allotment and removes surperficial heavy metal particles and other impurity; Then use washed with de-ionized water glass substrate; Then glass substrate is carried out respectively in acetone and absolute ethyl alcohol to ultrasonic cleaning 15min; Finally with deionized water, repeatedly rinse substrate and be placed in alcohol standbyly, before using, glass substrate is dried up with nitrogen.
Second step, adopts PECVD chemical vapour deposition technique at substrate surface deposition of amorphous silicon films; Concrete, first glass substrate is put into PECVD reative cell, and be evacuated to 1*10
-4pa, SiH
4gas is with the flow of 5sccm, and Ar gas enters PECVD reative cell with the flow of 50sccm, and it is 10w that deposition power is set, and 250 ℃ of underlayer temperatures, after deposition 20min, stop logical SiH
4gas, continues logical Ar gas to film cooling, takes out amorphous silicon membrane.
The 3rd step, is placed on amorphous silicon membrane in laser scanning chamber, is evacuated to 1*10
-3pa, stops bleeding, and in cavity, passes into SF
6gas, use 532nm laser scanning film surface, laser repetition rate is 1-10Hz, pulse duration is 6-10ns, and energy density is 3mJ/cm2, and sweep speed is 0.4 μ m/s, during scanning, use electronic control translation stage, film is placed on electronic control translation stage, and automatically controlled platform is connected with computer by USB, by software control platform on computer, moves.After having scanned, take out film.
Fig. 1 is the amorphous silicon membrane reflectance spectrum before nanosecond laser is processed; Fig. 2 is the amorphous silicon membrane reflectance spectrum after nanosecond laser scanning.As shown in Figure 2, the reflectivity of the amorphous silicon membrane after nanosecond laser scanning has had significantly and has reduced before processing, reflectivity under wavelength 300-1100nm is minimum can reach 0.8%, anti-reflection successful, has realized the wide spectrum anti-reflection in whole solar radiation spectral region substantially.
Claims (8)
1. for the amorphous silicon membrane light trapping structure preparation method of solar cell, it is characterized in that comprising the following steps:
A, substrate is carried out to clean;
B, at substrate surface deposition of amorphous silicon films;
C, to being deposited on the amorphous silicon membrane of substrate surface, carry out nanosecond laser scanning, thereby form light trapping structure in amorphous silicon surfaces.
2. the amorphous silicon membrane light trapping structure preparation method for solar cell as claimed in claim 1, it is characterized in that: in steps A, to substrate, adopt mode as described below to carry out clean: first, substrate to be immersed in the solution of the concentrated sulfuric acid and potassium bichromate allotment and to remove surperficial heavy metal particles and other impurity; Then use washed with de-ionized water substrate; Then substrate is carried out respectively in acetone and absolute ethyl alcohol to ultrasonic cleaning; Finally with deionized water, repeatedly rinse substrate and be placed in alcohol.
3. the amorphous silicon membrane light trapping structure preparation method for solar cell as claimed in claim 2, is characterized in that: the time that substrate carries out respectively ultrasonic cleaning in acetone and absolute ethyl alcohol is 15min.
4. the amorphous silicon membrane light trapping structure preparation method for solar cell as claimed in claim 3, is characterized in that: before carrying out step B, first substrate is dried up with nitrogen.
5. the amorphous silicon membrane light trapping structure preparation method for solar cell as claimed in claim 1, it is characterized in that: in step B, adopt PECVD chemical vapour deposition technique at substrate surface deposition of amorphous silicon films, and to PECVD reative cell, pass into silane SiH in the process of deposition
4mist with argon Ar.
6. the amorphous silicon membrane light trapping structure preparation method for solar cell as claimed in claim 5, is characterized in that: described SiH
4according to ratio as described below, mix Ar/SiH with the mist of Ar gas
4ratio range be 1～20.
7. according to the amorphous silicon membrane light trapping structure preparation method for solar cell described in any one claim in claim 1 to 6, it is characterized in that: in step C, to being deposited on the amorphous silicon membrane of substrate surface, to carry out the concrete grammar of nanosecond laser scanning as follows: the amorphous silicon membrane preparing is put into closed chamber, and be evacuated to 1 * 10
-3pa or following; Pass into SF
6gas; Use 532nm laser scanning film surface, laser repetition rate is 1-10Hz, and pulse duration is 6-10ns, and energy density is 3mJ/cm
2, sweep speed is 0.4 μ m/s.
8. the amorphous silicon membrane light trapping structure preparation method for solar cell as claimed in claim 7, is characterized in that: described substrate is glass substrate or ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410259079.XA CN104009128A (en) | 2014-06-12 | 2014-06-12 | Preparing method of amorphous silicon membrane light trapping structure for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410259079.XA CN104009128A (en) | 2014-06-12 | 2014-06-12 | Preparing method of amorphous silicon membrane light trapping structure for solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN104009128A true CN104009128A (en) | 2014-08-27 |
Family
ID=51369709
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|---|---|---|---|
| CN201410259079.XA Pending CN104009128A (en) | 2014-06-12 | 2014-06-12 | Preparing method of amorphous silicon membrane light trapping structure for solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104369440A (en) * | 2014-09-19 | 2015-02-25 | 电子科技大学 | All-dielectric reflection film for lasers, and preparation method thereof |
| CN111826632A (en) * | 2019-04-22 | 2020-10-27 | 上海新微技术研发中心有限公司 | Deposition method and deposition equipment for amorphous silicon film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011072153A2 (en) * | 2009-12-09 | 2011-06-16 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers |
| CN102581484A (en) * | 2012-03-02 | 2012-07-18 | 江苏大学 | Method for preparing silicon-based surface light trapping structure by utilizing ultrashort pulse laser |
| US20130199608A1 (en) * | 2010-04-22 | 2013-08-08 | Excico Group Nv | Method for manufacturing a photovoltaic cell comprising a tco layer |
-
2014
- 2014-06-12 CN CN201410259079.XA patent/CN104009128A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011072153A2 (en) * | 2009-12-09 | 2011-06-16 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers |
| US20130199608A1 (en) * | 2010-04-22 | 2013-08-08 | Excico Group Nv | Method for manufacturing a photovoltaic cell comprising a tco layer |
| CN102581484A (en) * | 2012-03-02 | 2012-07-18 | 江苏大学 | Method for preparing silicon-based surface light trapping structure by utilizing ultrashort pulse laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104369440A (en) * | 2014-09-19 | 2015-02-25 | 电子科技大学 | All-dielectric reflection film for lasers, and preparation method thereof |
| CN111826632A (en) * | 2019-04-22 | 2020-10-27 | 上海新微技术研发中心有限公司 | Deposition method and deposition equipment for amorphous silicon film |
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Application publication date: 20140827 |