CN109273461A - A kind of wafer-level packaging infrared detector and preparation method thereof - Google Patents
A kind of wafer-level packaging infrared detector and preparation method thereof Download PDFInfo
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- CN109273461A CN109273461A CN201811228153.6A CN201811228153A CN109273461A CN 109273461 A CN109273461 A CN 109273461A CN 201811228153 A CN201811228153 A CN 201811228153A CN 109273461 A CN109273461 A CN 109273461A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 238000010521 absorption reaction Methods 0.000 claims abstract description 45
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 31
- 229910000679 solder Inorganic materials 0.000 claims abstract description 21
- 230000009467 reduction Effects 0.000 claims abstract description 18
- 238000005538 encapsulation Methods 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 9
- 238000005520 cutting process Methods 0.000 abstract description 6
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 239000003463 adsorbent Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- -1 chalkogenide Chemical compound 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to a kind of wafer-level packaging infrared detectors and preparation method thereof.This method comprises: the PAD region in lid wafer forms conductive layer, and PAD solder joint is welded in an end face of conductive layer；Bonded layer is formed in the bond area of lid wafer；Reduction processing is carried out to the lid wafer for being located at same surface in addition to bond area and PAD region and with bond area；Infrared anti-reflection anti-reflective film is coated in the windowed regions of lid wafer, forms the first groove in the gas absorption region of lid wafer, and be coated with gas absorption film layer in the bottom wall of the first groove and side wall；Substrate wafer and lid wafer are subjected to bonding packaging, form wafer-level packaging infrared detector.The case where PAD region of lid wafer two sides is opened and PAD is caused to damage using the method for scribing cutting is avoided, encapsulation yields is improved by drawing PAD from front using a kind of new packaging technology process.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of wafer-level packaging infrared detector and its production side
Method.
Background technique
Infrared detector (Infrared Detector) is that incident infrared radiation signal is transformed into what electric signal exported
Device has a wide range of applications in every profession and trades such as military affairs, industry, traffic, safety monitoring, meteorology, medicine.Uncooled ir coke is flat
Surface detector is not necessarily to refrigerating plant, can work under room temperature state, have small in size, light weight, small power consumption, service life it is long, at
The advantages that this is low, starting is fast.Uncooled fpa detector mainly uses Vacuum Package, Can encapsulation, ceramics at present
The forms such as case package, wafer-level packaging.The integrated level of Wafer level packaging is higher, and processing step is also simplified, more suitable
Close high-volume and low cost production.
Summary of the invention
In consideration of it, passing through the purpose of the present invention is to provide a kind of wafer-level packaging infrared detector and preparation method thereof
The mode of TSV (Through Silicon Vias) through-hole draws PAD from front, and avoiding will using the method for scribing cutting
The case where PAD region of lid wafer two sides is opened and PAD is caused to damage, improves encapsulation yields.
The embodiment of the present invention is achieved in that
The embodiment of the invention provides a kind of production methods of wafer-level packaging infrared detector, comprising: in lid wafer
Bond area formed bonded layer；To the lid for being located at same surface in addition to the bond area and with the bond area
Wafer carries out reduction processing；Infrared anti-reflection anti-reflective film is coated in the windowed regions of the lid wafer, in the lid wafer
Gas absorption region form the first groove, and be coated with gas absorption film layer in the bottom wall of first groove and side wall；It will
Substrate wafer and the lid wafer carry out bonding packaging, form wafer-level packaging infrared detector, and the substrate wafer includes
There are infrared-sensitive pixel and readout circuit chip.In the embodiment of the present application, using a kind of new packaging technology process, pass through TSV
The mode of through-hole draws PAD from front, avoids and is opened the PAD region of lid wafer two sides using the method for scribing cutting
And the case where causing PAD to damage, improve encapsulation yields；And further pass through the area of increase adsorbent (layer)
To improve the reliability of entire seal cavity, and then the reliability of raising whole equipment.
In optional embodiment of the present invention, infrared anti-reflection anti-reflective film is coated in the windowed regions of the lid wafer,
Include: windowed regions the second groove of formation in the lid wafer, and is coated in the bottom wall of second groove and side wall
Infrared anti-reflection anti-reflective film.
In optional embodiment of the present invention, before the substrate wafer and the lid wafer are carried out bonding packaging,
The method also includes: reduction processing is carried out to the front of the lid wafer, exposes the other end of the conductive layer；Institute
The other end for stating conductive layer is welded with PAD solder joint, and in the front surface coated infrared anti-reflection anti-reflective film of the lid wafer.
In optional embodiment of the present invention, after the substrate wafer and the lid wafer are carried out bonding packaging,
The method also includes: reduction processing is carried out to the front of the lid wafer, exposes the other end of the conductive layer；Institute
The other end for stating conductive layer is welded with PAD solder joint, and in the front surface coated infrared anti-reflection anti-reflective film of the lid wafer.
The embodiment of the invention also provides a kind of wafer-level packaging infrared detectors, comprising: a lid wafer, in the lid
Dividing on the back side of sub- wafer has windowed regions, gas absorption region, PAD region, and surrounds the gas absorption region, institute
State the bond area of windowed regions and the PAD region；The gas absorption region is offered for coating gas protective cover
The first groove, the bond area is provided with bonded layer, and the windowed regions are coated with infrared anti-reflection anti-reflective film, described
PAD region is equipped with from the back side to the perforative through-hole in front, and the through-hole is interior to be filled with conductive layer, in the both ends of the surface of the conductive layer
It is equipped with PAD solder joint.In the embodiment of the present application, PAD is drawn from front by way of TSV through hole, is avoided using scribing
The case where PAD region of lid wafer two sides is opened and PAD is caused to damage by the method for cutting, improves encapsulation non-defective unit
Rate；And the reliability of entire seal cavity is further improved by increasing the area of adsorbent (layer), and then improve whole
The reliability of a equipment.
In optional embodiment of the present invention, the gas absorption region includes: positioned at first side of windowed regions
First area and second area positioned at described windowed regions second side, correspondingly, the first area and the second area
First groove is offered, first side and described second side are opposite side.
In optional embodiment of the present invention, the gas absorption region is arranged around the windowed regions.
In optional embodiment of the present invention, the windowed regions offer the second groove, the infrared anti-reflection antireflection
Film is coated on the bottom wall and side wall of second groove.
In optional embodiment of the present invention, the bottom surface of the bottom surface of first groove and second groove is located at same
On horizontal line.
In optional embodiment of the present invention, the inner sidewall of first groove far from second groove is in step
Shape.
In optional embodiment of the present invention, infrared anti-reflection anti-reflective film is coated on the front of the lid wafer.
In optional embodiment of the present invention, the infrared anti-reflection anti-reflective film is coated on windowed regions and institute described in face
State the front of the lid wafer in the region that gas absorption region is collectively formed.
In optional embodiment of the present invention, the windowed regions are located at the center of lid wafer.
In optional embodiment of the present invention, the wafer-level packaging infrared detector further include: one has infrared-sensitive
The bonded layer of the substrate wafer of pixel and readout circuit chip, the substrate wafer and the lid wafer is with vacuum-packed side
Formula bonding.
Other features and advantages of the present invention will be illustrated in subsequent specification, also, partly be become from specification
It is clear that being understood by implementing the embodiment of the present invention.The objectives and other advantages of the invention can be by written
Specifically noted structure is achieved and obtained in specification, claims and attached drawing.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.By the way that shown in attached drawing, above and other purpose of the invention, feature and advantage will be more clear.In whole
Identical appended drawing reference indicates identical part in attached drawing.Attached drawing, emphasis deliberately are not drawn by actual size equal proportion scaling
It is to show the gist of the present invention.
Fig. 1 shows a kind of structural schematic diagram of wafer-level packaging infrared detector provided in an embodiment of the present invention.
Fig. 2 shows a kind of processes of the production method of wafer-level packaging infrared detector provided in an embodiment of the present invention
Figure.
Fig. 3 shows the PAD region provided in an embodiment of the present invention in lid wafer and forms conductive layer and weld PAD solder joint
Structural schematic diagram.
Fig. 4 shows the structural representation that the bond area provided in an embodiment of the present invention in lid wafer forms bonded layer
Figure.
Fig. 5 shows the structural schematic diagram provided in an embodiment of the present invention carried out after reduction processing to lid wafer.
Fig. 6 shows the structure that the gas absorption region provided in an embodiment of the present invention in lid wafer forms the first groove
Schematic diagram.
Fig. 7 show the windowed regions coating infrared anti-reflection anti-reflective film provided in an embodiment of the present invention in lid wafer with
And the structural schematic diagram in the first groove inner wall coating gas protective cover.
Fig. 8 shows the structural representation that the windowed regions provided in an embodiment of the present invention in lid wafer form the second groove
Figure.
Fig. 9 shows the second groove inner wall provided in an embodiment of the present invention in lid wafer and coats infrared anti-reflection antireflection
Film and structural schematic diagram in the first groove inner wall coating gas protective cover.
Figure 10 shows the structural schematic diagram of substrate wafer provided in an embodiment of the present invention.
Figure 11 shows substrate wafer provided in an embodiment of the present invention and lid wafer level packaging formation wafer-level packaging is infrared
The structural schematic diagram of detector.
Icon: 10- wafer-level packaging infrared detector；1- lid wafer；11- conductive layer；12- bonded layer；13-
First groove；14- gas absorption film layer；15- infrared anti-reflection anti-reflective film；The second groove of 16-；17-PAD solder joint；18-
Insulating layer；2- substrate wafer；21- infrared-sensitive pixel.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the present invention, it should be noted that term " center ", "front", "rear", "left", "right", "inner",
The orientation or positional relationship of the instructions such as "outside" be based on the orientation or positional relationship shown in the drawings or the invention product use
When the orientation or positional relationship usually put, be merely for convenience of description of the present invention and simplification of the description, rather than indication or suggestion
Signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as to this
The limitation of invention.In addition, term " first ", " second " etc. are only used for distinguishing description, it is not understood to indicate or imply opposite
Importance.Furthermore term "and/or" in the application, only a kind of incidence relation for describing affiliated partner, indicates may exist
Three kinds of relationships, for example, A and/or B, can indicate: individualism A exists simultaneously A and B, these three situations of individualism B.
In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting ",
" installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be fixedly connected, may be a detachable connection or one
Connect to body；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, it can also be indirect by intermediary
It is connected, can be the connection inside two elements.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in the present invention.
The embodiment of the invention provides a kind of wafer-level packaging infrared detectors 10, as shown in Figure 1.The wafer-level packaging is red
External detector 10 includes: that a lid wafer 1 and one have the substrate wafer 2 of infrared-sensitive pixel 21 and readout circuit chip,
The substrate wafer 2 is bonded in a vacuum tight manner with the bonded layer 12 of the lid wafer 1.Wherein, brilliant in the lid
Dividing on the back side of circle 1 has a windowed regions, gas absorption region, PAD region, and around the gas absorption region, described
The bond area of windowed regions and the PAD region.The gas absorption region is offered for coating gas protective cover 14
The first groove 13, the bond area is provided with bonded layer 12, and the windowed regions are coated with infrared anti-reflection anti-reflective film 15,
The PAD region is equipped with from the back side to the perforative through-hole in front, and the through-hole is interior to be filled with conductive layer 11, in the conductive layer 11
Both ends of the surface be equipped with PAD solder joint 17.Wherein, the back side and front are opposite face.
In the embodiment of the present application, PAD is drawn by way of TSV through hole from front, is avoided using scribing cutting
The case where PAD region of 1 two sides of lid wafer is opened and PAD is caused to damage by method, improves encapsulation yields；It goes forward side by side
One step improves the reliability of entire seal cavity by increasing the area of adsorbent (layer), and then improves whole equipment
Reliability.
Wherein, the substrate wafer 2 include infrared-sensitive pixel 21 and with readout circuit chip (not shown), at this
The bond area of substrate wafer 2 is formed with bonded layer 12, is welded with PAD solder joint 17 in the PAD region of the substrate wafer 2.Wherein,
Infrared-sensitive pixel 21 is used to infra-red radiation incident thereon being converted to electric signal, and is exported by readout circuit chip.Its
In, readout circuit chip is used to acquire the electric signal of the output of infrared-sensitive pixel 21.Wherein, it should be noted that the substrate is brilliant
The specific structure of circle 2 may refer to the structure of substrate wafer 2 in the prior art, mainly covered by improvement in this present embodiment
On sub- wafer 1, therefore only substrate wafer 2 is briefly described in the present embodiment.
Wherein, lid wafer 1 can be by the infrared transmission material of silicon-germanium, zinc sulphide, chalkogenide, barium fluoride or polymer
Material is made.
Wherein, lead to PAD in order to avoid opening the PAD region of 1 two sides of lid wafer using the method for scribing cutting
The case where damage, occurs, and in the embodiment of the present application, is equipped in the PAD region of lid wafer 1 from the back side to the perforative through-hole in front,
And conductive layer 11 is filled in the through-hole, PAD solder joint 17 is equipped in the both ends of the surface of the conductive layer 11, namely pass through
The mode of TSV through hole draws PAD from front, and then improves the yields of wafer-level packaging infrared detector 10.Wherein, it leads
Electric layer 11 is made of conductive material.Wherein, the manufacture craft of the conductive layer 11 are as follows: first form edge in the PAD region of lid wafer 1
Then the deep trouth that the front of the lid wafer 1 extends grows insulating layer 18 at the entire back side of lid wafer 1, such as titanium dioxide
Silicon, wherein grow insulating layer 18 including the side wall and bottom wall in the deep trouth；Then conductive material is filled in the deep trouth to be formed
Conductive layer 11 (that is the conductive layer 11 is wrapped up by the insulating layer 18 in the deep trouth), then in one end of the conductive layer 11
Weld PAD solder joint 17 in face；Then reduction processing is carried out to the front of the lid wafer 1, until exposing the conductive layer 11
PAD solder joint 17 is finally welded in the other end of conductive layer 11 in other end.
As an alternative embodiment, the PAD region includes: positioned at the of the gas absorption area first side
One region and second area positioned at the gas absorption area second side, correspondingly, the first area and secondth area
Domain is equipped with conductive layer 11, and first side and described second side are opposite side.For example, the PAD region includes: positioned at the gas
First area on the left of body binding domain and the second area on the right side of the gas absorption region.
Wherein, which is arranged around the perimeter of the lid wafer 1, to pass through bonding pattern with substrate wafer 2
Seal cavity is formed to seal infrared-sensitive pixel 21.By taking rectangular lid wafer 1 as an example, which is to enclose
It is arranged around the rectangular perimeter.Wherein, it is set to the bonded layer 12 of bond area, and surrounds bond area and is arranged, example
It such as, is a rectangular region.Wherein, the material of the bonded layer 12 is conductive material.
Wherein, include in 13 inner wall coating gas protective cover 14 of the first groove, in the bottom wall and side wall of the first groove 13
It is coated with gas absorption film layer 14, to increase the area of adsorbent (layer) as far as possible, and then improves entire seal cavity
Reliability, to improve the reliability of equipment.
Wherein, it is provided with windowed regions, gas absorption region on the back side of lid wafer 1 and is inhaled around the gas
The bond area in attached region and the windowed regions, as an alternative embodiment, the windowed regions are located at lid crystalline substance
The center of circle 1, so as to preferably sense infrared emissions.It is understood that the windowed regions can not also be located at the lid
The center of sub- wafer 1, therefore the example in the present embodiment, shown cannot be understood as being the limitation to the application.
Wherein, it should be noted that lid wafer 1 and substrate wafer 2 form seal cavity infrared by bonding pattern
Sensitive pixels 21 seal, and seal cavity needs condition of high vacuum degree, but is generated using bonding pattern meeting more or less for a long time
The gas that the volatilization of other substances generates in gas leakage and cavity, it is therefore desirable to place adsorbent (layer) in seal cavity
To keep the high vacuum of entire cavity.
As an alternative embodiment, the gas absorption region includes: positioned at first side of windowed regions
First area and second area positioned at described windowed regions second side, correspondingly, the first area and the second area
First groove 13 is offered, first side and described second side are opposite side.For example, the gas absorption region is wrapped
It includes: the first area on the left of the windowed regions and the second area on the right side of the windowed regions.
As another optional embodiment, the gas absorption region is arranged around the windowed regions.That is the gas
Body binding domain is located on the surrounding of the windowed regions, can be a continuous integral type region, is also possible to be opened by edge
Window region surrounding setting multiple discontinuity zones constitute, for example, by be located at windowed regions left side, right side, front side and after
The region of side is constituted.Wherein, it should be noted that when the gas absorption region by along windowed regions surrounding setting it is multiple not
When continuum is constituted, each region offers the first groove 13 for coating gas protective cover 14.
Wherein, windowed regions are coated with infrared anti-reflection anti-reflective film 15, to enhance the induction to infra-red radiation.In order into one
Step increases the area of infrared anti-reflection anti-reflective film 15, as an alternative embodiment, the windowed regions offer second
Groove 16, the coating infrared anti-reflection anti-reflective film 15 are coated on the bottom wall and side wall of the second groove 16.That is, in windowed regions
When coating infrared anti-reflection anti-reflective film 15, it is coated with infrared anti-reflection anti-reflective film 15 in the bottom wall and side wall of the second groove 16,
To increase the area of infrared anti-reflection anti-reflective film 15.
As an alternative embodiment, the bottom surface of first groove 13 and the bottom surface of second groove 16 are located at
In same horizontal line.It is, of course, understood that the bottom surface of the first groove 13 can also get along well, the bottom surface of the second groove 16 is located at
In same horizontal line.In addition, being opened in the bottom surface of the first groove 13 of the different location in gas absorption region can not also be located at
In same horizontal line, for example, being opened in the bottom surface of the first groove 13 of first area and being opened in the first groove of second area
13 bottom surface can be located in same horizontal line, can not also be located in same horizontal line.
In addition, as an alternative embodiment, opening up the first groove 13 in gas absorption region and in windowing area
It, can be first same to being located in addition to bond area and PAD region and with the bond area before domain opens up the second groove 16
The lid wafer 1 on surface carries out reduction processing, for example, 10um is thinned, namely to gas absorption region and windowed regions institute
Region carry out reduction processing.Then the first groove 13 of about 100um depth just is opened up in gas absorption region, and opened
Window region opens up the second groove 16 of about 100um depth, so that the inner sidewall of the first groove 13 far from second groove 16
In step-like.
Wherein, it should be noted that in 13 inner wall coating gas protective cover 14 of the first groove, in addition in the first groove
13 bottom wall and side wall is coated with outside gas absorption film layer 14, the part and also to connect to the first groove 13 with PAD region
A part of coating gas protective cover 14 of protrusion between one groove 13 and the second groove 16, to increase gas suction as far as possible
The area of membrane layer 14.Similarly, when 16 inner wall of the second groove coats infrared anti-reflection anti-reflective film 15, in addition in the second groove
16 bottom wall and side wall is coated with outside gas absorption film layer 14, also to the surplus of the protrusion between the second groove 16 and the first groove 13
Remaining part point coating infrared anti-reflection anti-reflective film 15, to increase the area of infrared anti-reflection anti-reflective film 15 as far as possible.
As an alternative embodiment, infrared anti-reflection anti-reflective film 15 is coated on the front of the lid wafer 1,
To enhance the sensitivity to infra-red radiation.As an alternative embodiment, can be the front of lid wafer 1 except PAD is welded
Place coating infrared anti-reflection anti-reflective film 15 except point 17, is also possible to the infrared anti-reflection anti-reflective film 15 coated on described
The institute in the region that infrared anti-reflection anti-reflective film 15 is collectively formed coated on windowed regions and the gas absorption region described in face
State the front of lid wafer 1.Namely the projection of the positive infrared anti-reflection anti-reflective film 15 coated on lid wafer 1 is opened with described
The projection in window region and the gas absorption region is overlapped.
The embodiment of the present application also provides a kind of production methods of wafer-level packaging infrared detector 10, as shown in Figure 2.Under
The step of face will as shown in connection with fig. 2 is described.
Step S101: the deep trouth that the front along the lid wafer extends is formed in the PAD region of lid wafer, and in institute
It states and fills conductive material formation conductive layer in deep trouth, and weld PAD solder joint in an end face of the conductive layer.
It is formed in the PAD region of lid wafer 1 using sputtering or evaporation coating method and is extended along the front of the lid wafer 1
Deep trouth, then lid wafer 1 the entire back side grow insulating layer 18 (such as silica), wherein including in the deep trouth
Side wall and bottom wall grow insulating layer 18；Conductive material (for example, polysilicon, tungsten etc.) is filled in the deep trouth again forms conductive layer 11
(that is the conductive layer 11 is wrapped up by the insulating layer 18 in the deep trouth), and use CMP (Chemical Mechanical
Polishing, chemically mechanical polishing) its surface is polished, finally PAD solder joint 17, institute are welded in an end face of the conductive layer 11
It is opposite face that front, which is stated, with the face (i.e. the back side) where the PAD region, as shown in Figure 3.
Step S102: bonded layer is formed in the bond area of lid wafer.
As shown in figure 4, forming bonded layer 12 using sputtering or evaporation coating method in the bond area of lid wafer 1.
Step S103: to the lid wafer for being located at same surface in addition to the bond area and with the bond area
Carry out reduction processing.
As shown in figure 5, being located at same surface in addition to the bond area and PAD region and with the bond area
The lid wafer 1 carries out reduction processing.For example, using dry method or wet process in addition to the bond area and PAD region
And it is located at etching certain depth groove on the lid wafer 1 on same surface, such as 10um with the bond area.Namely it is right
Region where gas absorption region and windowed regions carries out reduction processing.
Step S104: infrared anti-reflection anti-reflective film is coated in the windowed regions of the lid wafer, in the lid wafer
Gas absorption region form the first groove, and be coated with gas absorption film layer in the bottom wall of first groove and side wall.
To the lid crystalline substance for being located at same surface in addition to the bond area and PAD region and with the bond area
After circle 1 carries out reduction processing, form the first groove 13 in the gas absorption region of the lid wafer 1, such as using dry method or
Wet process, in the gas absorption region etch certain depth groove of the lid wafer 1, such as 100um, as shown in Figure 6.Wherein, by
Reduction processing is carried out to the lid wafer 1 for being located at same surface in addition to the bond area and with the bond area in first
Afterwards, the first groove 13 then is formed in the gas absorption region of the lid wafer 1, so, so that close to the bond area
First groove 13 inner sidewall in step-like.
Infrared anti-reflection anti-reflective film 15 is coated in the windowed regions of the lid wafer 1, and in first groove 13
Bottom wall and side wall are coated with gas absorption film layer 14, as shown in Figure 7.
The second groove first is formed in the windowed regions of the lid wafer 1 as an alternative embodiment, can be
16, dry method or wet process are such as utilized, etches certain depth groove, such as 100um, such as Fig. 8 in the windowed regions of the lid wafer 1
It is shown.
And it is coated with infrared anti-reflection anti-reflective film 15 in the bottom wall of second groove 16 and side wall, as shown in Figure 9.
Step S105: substrate wafer and the lid wafer are subjected to bonding packaging, form wafer-level packaging infrared acquisition
Device, the substrate wafer include infrared-sensitive pixel and readout circuit chip.
It will include the substrate wafer 2 (as shown in Figure 10) of infrared-sensitive pixel 21 and readout circuit chip, with the lid
Sub- wafer 1 carries out bonding packaging, forms wafer-level packaging infrared detector 10, as shown in figure 11.
Wherein, the structure of substrate wafer 2, as shown in Figure 10.The substrate wafer 2 includes infrared-sensitive pixel 21 and and reads
Circuit chip (not shown) out is formed with bonded layer 12 in the bond area of the substrate wafer 2, in the substrate wafer 2
PAD region is welded with PAD solder joint 17.
In addition it is also necessary to which the front to lid wafer 1 carries out reduction processing, expose the other end of the conductive layer 11,
And PAD solder joint 17 is welded in the other end of the conductive layer 11.Wherein, which can be before encapsulation, can also be with
It is after encapsulation, to be not limited thereto.
In addition, can also subtracted to increase sensitivity of the wafer-level packaging infrared detector 10 to infra-red radiation
The front surface coated infrared anti-reflection anti-reflective film 15 of thin treated the lid wafer 1.Wherein, which can be in encapsulation
Before, it is also possible to after encapsulation, be not limited thereto.For example, substrate wafer 2 and lid wafer 1 carry out bonding packaging it
Before, reduction processing is carried out to the front of the lid wafer 1, exposes the other end of the conductive layer 11；In the conductive layer
11 other end is welded with PAD solder joint 17, and in the front surface coated infrared anti-reflection anti-reflective film 15 of the lid wafer 1.Or
Person subtracts the front of the lid wafer 1 after the substrate wafer 2 is carried out bonding packaging with the lid wafer 1
The other end of the conductive layer 11 is exposed in thin processing；It is welded with PAD solder joint 17 in the other end of the conductive layer 11, and
In the front surface coated infrared anti-reflection anti-reflective film 15 of the lid wafer 1.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of production method of wafer-level packaging infrared detector characterized by comprising
The deep trouth that the front along the lid wafer extends is formed in the PAD region of lid wafer, and is filled in the deep trouth
Conductive material forms conductive layer, and welds PAD solder joint, the front and the PAD region institute in an end face of the conductive layer
Face be opposite face；
Bonded layer is formed in the bond area of the lid wafer；
To the lid wafer for being located at same surface in addition to the bond area and the PAD region and with the bond area
Carry out reduction processing；
Infrared anti-reflection anti-reflective film is coated in the windowed regions of the lid wafer, in the gas absorption region of the lid wafer
The first groove is formed, and is coated with gas absorption film layer in the bottom wall of first groove and side wall；
Substrate wafer and the lid wafer are subjected to bonding packaging, form wafer-level packaging infrared detector, the substrate is brilliant
Circle includes infrared-sensitive pixel and readout circuit chip.
2. the method according to claim 1, wherein the windowed regions in the lid wafer coat infrared anti-reflection
Anti-reflective film, comprising:
The second groove is formed in the windowed regions of the lid wafer, and is coated in the bottom wall of second groove and side wall red
Outer antireflecting film.
3. the method according to claim 1, wherein the substrate wafer is bonded with the lid wafer
Before encapsulation, the method also includes:
Reduction processing is carried out to the front of the lid wafer, exposes the other end of the conductive layer；
It is welded with PAD solder joint in the other end of the conductive layer, and anti-in the front surface coated infrared anti-reflection of the lid wafer
Reflectance coating.
4. the method according to claim 1, wherein the substrate wafer is bonded with the lid wafer
After encapsulation, the method also includes:
Reduction processing is carried out to the front of the lid wafer, exposes the other end of the conductive layer；
It is welded with PAD solder joint in the other end of the conductive layer, and anti-in the front surface coated infrared anti-reflection of the lid wafer
Reflectance coating.
5. a kind of wafer-level packaging infrared detector characterized by comprising
One lid wafer, dividing on the back side of the lid wafer has windowed regions, gas absorption region, PAD region, and
Around the gas absorption region, the bond area of the windowed regions and the PAD region；The gas absorption region opens up
There is the first groove for coating gas protective cover, the bond area is provided with bonded layer, and the windowed regions are coated with
Infrared anti-reflection anti-reflective film, the PAD region are equipped with from the back side to the perforative through-hole in front, and the through-hole is interior filled with conduction
Layer is equipped with PAD solder joint in the both ends of the surface of the conductive layer.
6. wafer-level packaging infrared detector according to claim 5, which is characterized in that the gas absorption region packet
It includes: the first area positioned at first side of windowed regions and the second area positioned at described windowed regions second side, correspondingly,
The first area and the second area offer first groove, and first side and described second side are opposite
Side.
7. wafer-level packaging infrared detector according to claim 5, which is characterized in that the windowed regions offer
Two grooves, the infrared anti-reflection anti-reflective film are coated on the bottom wall and side wall of second groove.
8. wafer-level packaging infrared detector according to claim 7, which is characterized in that the institute far from second groove
The inner sidewall of the first groove is stated in step-like.
9. wafer-level packaging infrared detector according to claim 5, which is characterized in that on the front of the lid wafer
Coated with infrared anti-reflection anti-reflective film.
10. the wafer-level packaging infrared detector according to any one of claim 5-9, which is characterized in that the wafer
Grade encapsulation infrared detector further include:
One has the substrate wafer of infrared-sensitive pixel and readout circuit chip, the key of the substrate wafer and the lid wafer
Layer is closed to be bonded in a vacuum tight manner.
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| CN201811228153.6A CN109273461A (en) | 2018-10-19 | 2018-10-19 | A kind of wafer-level packaging infrared detector and preparation method thereof |
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| CN201811228153.6A CN109273461A (en) | 2018-10-19 | 2018-10-19 | A kind of wafer-level packaging infrared detector and preparation method thereof |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008292311A (en) * | 2007-05-24 | 2008-12-04 | Panasonic Electric Works Co Ltd | Sensor device and method for manufacturing the same |
| CN102549749A (en) * | 2009-06-19 | 2012-07-04 | 弗劳恩霍弗应用技术研究院 | Housing for an infrared radiation micro device and method for fabricating such housing |
| CN102583220A (en) * | 2012-03-29 | 2012-07-18 | 江苏物联网研究发展中心 | Wafer-level vacuum packaged infrared detector and manufacturing method thereof |
| CN102610619A (en) * | 2012-03-29 | 2012-07-25 | 江苏物联网研究发展中心 | Wafer-level vacuum encapsulated infrared focal plane array (IRFPA) device and method for producing same |
| CN202687944U (en) * | 2012-07-27 | 2013-01-23 | 江苏物联网研究发展中心 | MEMS (Micro-Electro-Mechanical Systems) film packaging structure for integrating getter |
| US20140175590A1 (en) * | 2012-12-20 | 2014-06-26 | Raytheon Company | Getter structure for wafer level vacuum packaged device |
| CN104003352A (en) * | 2014-06-13 | 2014-08-27 | 中国科学院上海微***与信息技术研究所 | Mixed wafer level vacuum packaging method and structure based on getter film |
| US20150321905A1 (en) * | 2014-05-06 | 2015-11-12 | Raytheon Company | Wafer level packaged infrared (ir) focal plane array (fpa) with evanescent wave coupling |
| CN208706650U (en) * | 2018-10-19 | 2019-04-05 | 南京方旭智芯微电子科技有限公司 | A kind of wafer-level packaging infrared detector |
-
2018
- 2018-10-19 CN CN201811228153.6A patent/CN109273461A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008292311A (en) * | 2007-05-24 | 2008-12-04 | Panasonic Electric Works Co Ltd | Sensor device and method for manufacturing the same |
| CN102549749A (en) * | 2009-06-19 | 2012-07-04 | 弗劳恩霍弗应用技术研究院 | Housing for an infrared radiation micro device and method for fabricating such housing |
| CN102583220A (en) * | 2012-03-29 | 2012-07-18 | 江苏物联网研究发展中心 | Wafer-level vacuum packaged infrared detector and manufacturing method thereof |
| CN102610619A (en) * | 2012-03-29 | 2012-07-25 | 江苏物联网研究发展中心 | Wafer-level vacuum encapsulated infrared focal plane array (IRFPA) device and method for producing same |
| CN202687944U (en) * | 2012-07-27 | 2013-01-23 | 江苏物联网研究发展中心 | MEMS (Micro-Electro-Mechanical Systems) film packaging structure for integrating getter |
| US20140175590A1 (en) * | 2012-12-20 | 2014-06-26 | Raytheon Company | Getter structure for wafer level vacuum packaged device |
| US20150321905A1 (en) * | 2014-05-06 | 2015-11-12 | Raytheon Company | Wafer level packaged infrared (ir) focal plane array (fpa) with evanescent wave coupling |
| CN104003352A (en) * | 2014-06-13 | 2014-08-27 | 中国科学院上海微***与信息技术研究所 | Mixed wafer level vacuum packaging method and structure based on getter film |
| CN208706650U (en) * | 2018-10-19 | 2019-04-05 | 南京方旭智芯微电子科技有限公司 | A kind of wafer-level packaging infrared detector |
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