CN103999217A - Vertical switching formations for esd protection - Google Patents
Vertical switching formations for esd protection Download PDFInfo
- Publication number
- CN103999217A CN103999217A CN201280056095.8A CN201280056095A CN103999217A CN 103999217 A CN103999217 A CN 103999217A CN 201280056095 A CN201280056095 A CN 201280056095A CN 103999217 A CN103999217 A CN 103999217A
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- vsd material
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1013—Thin film varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0257—Overvoltage protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0257—Overvoltage protection
- H05K1/0259—Electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/07—Electric details
- H05K2201/073—High voltage adaptations
- H05K2201/0738—Use of voltage responsive materials, e.g. voltage switchable dielectric or varistor materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Structure Of Printed Boards (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Embodiments disclosed herein generally relate to structures, methods and devices employing a voltage switchable dielectric material to achieve vertical and/or dual switching protection against ESD and other overvoltage events.
Description
Technical field
Embodiment disclosed herein relates generally to realize structure, method and the equipment for the vertical switch protecting of ESD and other overvoltage event with the dielectric material of voltage switchable.
Background technology
Electronic equipment is usually for example, to make by assembling and connecting various assemblies (, integrated circuit, passive block, chip etc., below referred to as " chip ").Many assemblies, particularly semiconductor, to applying the spuious electrical events sensitivity of overvoltage under so-called overvoltage condition to equipment.The example in the source of overvoltage condition comprises the bulk resistor load of electromagnetic induction load, the switching of static discharge (ESD), back electromotive force (EMF), lightning, solar wind, switching such as motor and electromagnet, large curent change, electromagnetic pulse etc.Overvoltage condition may cause high voltage in the equipment that comprises active and/or passive electric components or circuit element (such as semiconducter IC chip), and these active and/or passive electric components or circuit element may cause large current flowing by assembly or in assembly.Large current flowing may effectively damage or otherwise the function of so active or passive block or circuit element be caused to negative impact.
Some chip for some overvoltage event can expectability in the operating process of the encapsulation of chip or corresponding electronic equipment occurring (for example comprises; gentle esd event) " in chip " protection protection of " manikin " event (for example, for).
Chip can packed (for example, being attached to substrate).The chip of encapsulation can be connected to extra (for example, from chip (ex-chip)) overvoltage protection, and the chip of these protective device protection packagings, prevents more serious (for example, higher voltage) overvoltage event.Due in chip and chip external overvoltage protective device in electrical communication, therefore, may need chip external overvoltage protective device come " protection " chip internal overvoltage protective device.Use the chip external overvoltage protective device of the assembly separating to be difficult to add in the manufacture process of substrate.In addition, in chip, protection is difficult to across complete system or subsystem optimization.The example of the specification of testing for ESD comprises IEC61000-4-2 and JESD22-A114E.
Can use printed circuit board (PCB), printed substrate, or similarly substrate (below also referred to as " PCB ") assemble, support and connecting electronic assembly.PCB generally includes the substrate of dielectric material and one or more conductive lead wires, so that the conductivity between various attached assemblies, chip etc. to be provided.Conventionally, in dielectric substrate, print the pattern of (for example, using the printing technology such as silk screen printing) metal lead wire, so that electrical connection to be provided.Can alternatively, apply metal level (for example, the layer of Cu, Ag, Au) to substrate, subsequently, remove some part of (for example, etching) metal level, cause required pattern.Can be on PCB arranging multiplayer conductive pattern and/or dielectric material.Each layer can connect with passage.Comprise 14 layers or more multi-layered printed circuit board (PCB) much.
PCB is generally used for supporting and being connected various integrated electronic building bricks, such as chip, encapsulation and other integrated devices.PCB also can support and the assembly that is connected separation, such as resistor, capacitor, inductor etc., and provides connection between assembly integrated and that separate.Conductive pattern in PCB in electronic equipment and other assemblies or region and/or layer are provided for that conduction may damage or otherwise affect negatively the path of the overvoltage event of assembly sometimes.
Exist in the prior art various structures, method and equipment for the overvoltage protection to electronic equipment is provided (for example; be surface mounted to the Surge suppression assembly of the separation of PCB); but they are generally showing various restrictions aspect manufacturability, performance, operating characteristics and cost.Need the overvoltage protection structure, method and the equipment that improve.
Brief description of the drawings
Be included about detailed description below, and formed the accompanying drawing of a part for specification, for further illustrating various embodiment, and explanation is according to the various principle and advantages of example embodiment disclosed herein.
Fig. 1 shows and can switch VSDM structure for the level that comprises VSD material of the esd protection of electronic building brick.
Fig. 2 shows and can switch cylindrical structure for the level that comprises VSD material of the esd protection of electronic building brick.
Fig. 3 shows the PCB using about various embodiment and the direction reference being associated.
Fig. 4 A show according to embodiment be applicable to realize vertical switching and can be integrated in VSDM in substrate equipment structure with VSD material.
Fig. 4 B shows can be integrated in PCB or in another substrate and being applicable to realize the VSDM structure that comprises VSD material layer of vertical switching according to embodiment.
Fig. 5 shows the VSDM structure that is applicable to realize with VSD material vertical switching according to embodiment.
Fig. 6 shows the VSDM structure that is applicable to realize with VSD material vertical switching according to embodiment.
Fig. 7 show according to embodiment for produce the method for the one or more conductive structures such as layering interconnects in the vertical VSDM structure switching.
Fig. 8 shows according to the figure of the sample responses voltage envelope of the VSDM structure with vertical switching of embodiment.
Fig. 9 shows the VSD material structure that is applicable to realize with VSD material vertical switching according to embodiment.
Figure 10 shows the VSD material structure that is applicable to realize with VSD material vertical switching according to embodiment.
Figure 11 shows the VSD material structure that is applicable to realize with VSD material vertical switching according to embodiment.
Figure 12 A shows the VSD material structure that is applicable to realize with VSD material vertical switching according to embodiment.
Figure 12 B shows the VSD material structure that is applicable to realize with VSD material vertical switching according to embodiment.
Figure 13 shows can be integrated in PCB or in another substrate and being applicable to realize the VSDM structure that comprises VSD material layer of vertical switching according to embodiment.
Figure 14 shows can be integrated in PCB or in another substrate and being applicable to realize the VSDM structure that comprises VSD material structure of vertical switching according to embodiment.
Figure 15 A shows the VSD material structure that is applicable to realize with VSD material vertical switching together with one or more circuit elements according to embodiment.
Figure 15 B shows the VSD material structure that is applicable to realize with VSD material vertical switching according to embodiment.
Figure 16 shows the VSD material structure that is applicable to realize with multiple VSD material structures vertical switching according to embodiment.
Figure 17 shows the two-way switching VSD material structure with VSD material is realized vertically and level is switched that is applicable to according to embodiment.
Embodiment
Although specification finishes with claims of the feature that defines various embodiment,, by reference to accompanying drawing and read following detailed description, will understand better the present invention, wherein, adopt all the time identical Reference numeral.
According to various embodiment disclosed herein for the ESD of substrate equipment, electronic building brick and/or electronic equipment and the protection of other overvoltage event, can be included in the dielectric material (" VSD material " or " VSDM ") that corresponding substrate and/or equipment comprise voltage switchable.Although those skilled in the art will realize that overvoltage event comprises multiple event,, can use ESD (static discharge) to describe in general manner overvoltage event herein.
In one embodiment, VSD material is embedded in equipment, as be applicable to, by equipment, at least a portion of ESD signal is transmitted to ground wire or be transmitted to another predefine point layer or other structures.
In one embodiment, the circuit element such as filter is arranged between the VSDM structure and electronic building brick of vertical switching, to dwindle or to prevent that the high frequency voltage component being generated by esd event from arriving electronic building brick.Circuit element can be used as layer, structure or passage are embedded in substrate equipment, or can be used as surface mount component and be attached in substrate.
It is the material showing as the nonlinear resistance of the function of voltage according to the VSD material of various embodiment disclosed herein.Although VSD material list reveals nonlinear resistance,, be not all materials that shows nonlinear resistance be all VSD material.For example, but its resistance as the function of temperature substantially, not as the material of the function of voltage, for embodiment disclosed herein, will be not interpreted as VSD material.In various embodiments, VSD material list reveals as voltage with such as the nonlinear resistance of electric current, energy field intensity, light or the extra operating parameter of other electromagnetic radiation input and/or the function of other similar parameters and changes.
The variation of the resistance of the function as voltage being revealed by VSD material list comprises the transition from high-resistance state to low-resistance state.In the time of about specific voltage value, this transition occurs, this specific voltage value can differently be called as " character voltage ", " character voltage level ", " switched voltage " or " switching voltage levels ".Character voltage can be different, still, for given formula, relatively stable for the various formulas of VSD material.The character voltage of special formulation can be the function of the voltage that combines with the additional parameter such as the electromagnetic energy of temperature and/or incident when various wavelength (comprising optics, infrared ray, UV or microwave).
For given VSD material composition, character voltage can in order to the voltage of every long measure, (corresponding " feature electric field " or " Characteristic Field " that for example, V/MIL volt per mil (V/mil), the volt (V/ μ m) etc.) of every micron are expressed define.
Unless pointed out clearly in addition, term " structure of VSD material ", " VSD material structure " or " VSDM structure " are intended to refer to any volume of the VSD material with certain physical size that can carry out electric handoff functionality.The example of the structure of VSD material comprises a certain amount of VSD material (no matter be arranged on substrate or as independent stratum and solidify), be limited in a certain amount of VSD material between two or more electrodes, by a certain amount of VSD materials two or more insulation or semiconductor structure restriction, or any other element or the configuration of the VSD material that can switch between the state of conduction at nonconducting state substantially with substantially in response to fully large change in voltage.
In one implementation, VSD material structure can be by producing (character voltage of other two a certain amount of VSD materials can be equal to each other or can be unequal each other) at an a certain amount of VSD material that has between other two a certain amount of VSD materials that are different from First Characteristic voltage restriction and have First Characteristic voltage.
In one implementation, VSD material structure can be by a certain amount of VSD material of the voltage that takes on a different character at (a), and (b) structure of one or more electrodes, insulation, and/or a certain amount of VSD material that between semiconductor structure, restriction has First Characteristic voltage produces.
The example of VSD material structure is one deck VSD material being arranged on Copper Foil (but not comprising Copper Foil).The compound structure that comprises VSD material layer and Copper Foil can be expressed as " structure of VSDM ".The more complicated structure of VSDM has been discussed below.
As the level course setting in PCB two adjacent level courses being limited in PCB (another example of VSD material structure is, the level course of VSD material structure top, and the level course of VSD material structure below) between coating, sheet or other layouts of VSD material.The compound structure that comprises this VSD material structure and two adjacent limit levels layers is by the example of structure that is VSDM.
Another example of VSD material structure is be arranged in the level course in PCB and (be for example limited between four structures in the same level course that is arranged in PCB, describe four etching ducts of rectangular V SD material structure) and for example, a certain amount of VSD material between two electrodes that are arranged in two adjacent level courses (, the conductive layer of top and insulating barrier below).The compound structure that comprises this VSD material structure and four limiting structures and two electrodes is by the example of structure that is VSDM.
For example, for (applying voltage, while applying voltage when the thickness across VSD material layer or across another gap of VSD material structure) two points between there is the structure of the VSD material of known distance, character voltage can be defined as specific voltage value (for example, the character voltage of this VSD material structure can be designated as the particular value taking volt as unit).
Therefore, in the time that VSD material is regarded as having the specified quantitative of some known dimensional characteristics (for example, there is the VSD material structure of possibility across the specific thicknesses of its generation voltage switching), the character voltage of VSD material structure can be to be expressed as the feature electric field definition of magnitude of voltage of unit length, or be defined as the character voltage that is expressed as specific voltage value.In various contexts, description in this patent can be quoted about various embodiment Characteristic Field or the character voltage of VSD material, in each situation, the suitable conversion that characteristic of correspondence field (volt with unit length represents) or character voltage (representing with volt) can be undertaken by the dimensional characteristics of the corresponding structure of consideration VSD material obtains.For example, for the uniform feature electric field producing in VSD material structure, the character voltage of this VSD material structure can be by being multiplied by the Characteristic Field of this VSD material (taking V/mil as unit) the corresponding gap switching across it (taking mil as unit) obtained.From meaning more generally, for the inhomogeneous feature electric field producing in VSD material structure, the character voltage of this VSD material structure can obtain the Characteristic Field of this VSD material in the gap switching across it by integration.In certain embodiments, for the physical features in some formula of VSD material and the gap that may switch across it, character voltage across the VSD material in such gap may directly or linearly (for example not be associated with the size in corresponding gap, in such embodiments, can, by directly measuring or passing through more complicated simulation or approximate, assess corresponding character voltage).
Generally speaking, the character voltage of VSD material structure can be the function that is arranged in amount, area of section, volume, the degree of depth, thickness, width and/or the length of executing the VSD material structure between alive two points, and may or relative shape, geometry, variable density and other relate to the function of the like variable of VSD material structure.
VSD material is non-conductive (, substantially insulate) substantially when lower than corresponding character voltage level, and under these circumstances, it shows as insulator or dielectric substantially.This state can be called as substantially nonconducting or insulation state.Voltage lower than the character voltage level of VSD material can be called as low-voltage (at least with respect to the voltage higher than character voltage level).Under such operational procedure lower than character voltage level, the VSD material that provided in one or more embodiments also can be interpreted as having semi-conductive attribute, is similar to the semi-conducting material that is suitable for serving as substrate in semiconductor fabrication.When the size of voltage is during lower than character voltage level, can substantially show as the insulator for positive and negative voltage according to the VSD material of various embodiment.
In the time of the voltage higher than its character voltage level, by thering is the resistance being substantially zero, or relatively low resistance, substantially show as conductor according to the VSD material of various embodiment disclosed herein.This can be called as the state of conduction substantially.Voltage higher than character voltage level can be called as high voltage.When the size of voltage is during higher than character voltage level, VSD material is for positive and negative voltage, be conduction or conduction substantially.Character voltage can be positive or negative, depends on the polarity of the voltage applying.When VSD material response become in exceeding the voltage of its character voltage be substantially conduction time, can say VSD material " energising ".When VSD material after removal exceeds the voltage of its character voltage, become be non-conductive substantially time, can say that VSD material is " power-off ".In the time of the energising of VSD material or power-off, briefly VSD material " switching ".
In ideal model, the operation of the VSD material providing in disclosed various embodiment is herein approximately has unlimited resistance in the time of the voltage lower than character voltage, has zero resistance in the time of the voltage higher than character voltage.But in normal operation, such VSD material has high still limited resistance conventionally in the time of the voltage lower than character voltage, but in the time of the voltage higher than character voltage, there is the resistance of low non-zero.As example, for specific VSD material, the ratio of the resistance when resistance can expect low-voltage time and high voltage levels off to large value (for example,, 10
3, 10
6, 10
9, 10
12or within higher scope).In ideal model, this ratio can be approximated to be infinitely, or otherwise very high.
The VSD material providing in various embodiment disclosed herein shows high repeatable (, invertibity) under low-voltage state and high-voltage state in its operation.In certain embodiments, VSD material substantially shows as insulator or dielectric (, be nonconducting substantially, and show very high or unlimited resistance substantially) in the time of the voltage lower than character voltage level.Then,, in the time operating under the voltage higher than character voltage level, VSD material is switched to and becomes is conduction substantially, then, again becomes insulator or dielectric substantially in the time of the voltage lower than character voltage.If input voltage level at the voltage lower than character voltage with higher than the voltage of character voltage between transition, VSD material can continue alternately to change uncertain number of times under these two kinds of modes of operation.In the time of transition between these two kinds of modes of operation, VSD material may experience the hysteresis of certain level, and this may change character voltage level, handoff response time or other operating characteristicses of VSD material to a certain extent.
According to embodiment disclosed herein be that transition between first (lower) voltage status in when insulation and second (higher) voltage status in the time that VSD material is conduction is substantially predictable substantially substantially when VSD material, and expect the scope of limited signal envelope amplitude and limited switching times of being generally limited to.In ideal model, VSD material response in rise higher than the input step function signal of character voltage from the status transition of insulation substantially to state time that need to spend of conduction can be approximated to be zero substantially., to can be approximated to be instantaneous substantially in transition.Similarly, in ideal model, VSD material response can be approximated to be zero in being reduced to the time that need to spend to substantially non-conductive state from the status transition substantially conducting electricity lower than the input step function signal below character voltage.It is instantaneous substantially that this reverse transition also can be similar to.But in normal operation, are non-zeros these two kinds of transit times of VSD material.Generally speaking, such transit time is very little, preferably, as much as possible little (for example,, about 10
-6second, 10
-9second, 10
-12second or less scope within).Be presented to the people's such as Kosowsky title for the U.S. Patent number 7 of " Formulations for Voltage Switchable Dielectric Material Having a Stepped Voltage Response and Methods for Making the Same " on January 18th, 2011,872, in 251, disclose the formula of VSD material and the further details of feature, quoted the content of this patent application here as a reference.
When under the state substantially conducting electricity, the signal of telecommunication can be directed to ground wire or another predetermined point in corresponding circuit, substrate or electronic equipment according to the VSD material of various embodiment, to protect electronic building brick.In various embodiments, predetermined point is ground wire, virtual ground, shielding, safety ground etc.Can operate with together with the VSD material of various embodiment disclosed herein and/or comprised by the example of the electronic building brick of VSD material protection: (a) circuit element, circuit structure, the electronic component that install on surface (for example, resistor, capacitor, inductor), PCB or other circuit boards, electronic equipment, electronic sub-system, electronic system, (b) any other electricity, magnetic, miniature eletric mechanical structure (MEMS) or similarly element, structure, assembly, system and/or equipment, (c) any other unit of processing or transmit data and use signal of telecommunication operation or may be damaged by the signal of telecommunication, and (d) superincumbent (a), (b) aforementioned every any combination of mark and/or (c).
Generally speaking, in the case of existing high signal voltage, current strength and energy or power level, damaged, may irreversibly damage before, VSD material may have limited conduction current or otherwise the ability of operation.In addition, if the signal of telecommunication conventionally in working specification continues the long time, VSD material is possibility damaged (for example, VSD material may generate heat and be finally breakdown in the time conducting such signal) also.For example, in the time being exposed to the input signal with the voltage level that continues the 10KV that was less than for 100 nanoseconds, VSD material can normally turn round, and still, is greater than several milliseconds if this signal continues to be applied in, may be damaged.The ability that VSD material tolerates high-caliber voltage, electric current, power supply or energy before damaged may depend on various factors, such as the special characteristic of the special component of VSD material, corresponding VSD material structure (for example, the VSD material structure with larger physical size can conduct higher current density), corresponding circuit architecture, the existence of other ESD guard assemblies and the feature comprising the equipment of VSD material.
Be polymer synthetic according to the VSD material of various embodiment, and can comprise the microparticle material such as metal, semiconductor, pottery etc.For example, on November 23rd, 2010 submits to, title is the US number of patent application 12/953 of " Formulations for Voltage Switchable Dielectric Materials Having a Stepped Voltage Response and Methods for Making the Same ", 309, on July 7th, 2010 submits to, title is the US number of patent application 12/832 of " Light-Emitting Diode Device For Voltage Switchable Dielectric Material Having High Aspect Ratio Particles ", 040, and submission on March 3rd, 2010, title is the US number of patent application 12/717 of " Voltage Switchable Dielectric Material Having High Aspect Ratio Particles ", 102, and the United States Patent (USP) 7 that is " Electronic Device For Voltage Switchable Dielectric Material Having High Aspect Ratio Particles " at the title that on July 19th, 2011 issues, 981, in 325, describe according to the mixture of the operable various VSD materials of various embodiment.
Can comprise the organic and/or inorganic particulate in host material that is dispersed in of host material and one or more types according to the VSD material of various embodiment.
Can include organic polymer according to the example of the host material comprising in the VSD material of various embodiment, such as silicon polymer, phenolic resins, epoxy resin (for example, EPON Resin828, difunctionality bisphenol-A/epoxychloropropane derived liquid epoxy resin), polyurethane, polyacrylate (methacrylate), polyamide, polyester, Merlon, polyacrylamide, polyimides, polyethylene, polypropylene, polyphenylene oxide, polysulfones, ceramet (ceramer) (sol-gel (solgel)/polymer synthetic) and PPSU.Other examples of such host material comprise inorganic polymer, such as siloxanes and polyphosphazene (polyphosphazine).
Can comprise conduction and/or semiconductive material according to the example of the particle comprising in the VSD material of various embodiment, comprise that copper, aluminium, nickel, silver, gold, titanium, stainless steel, chromium, other metal alloys, T, Si, NiO, SiC, ZnO, BN, C are (with diamond, nanotube, and/or the form of fullerene comprises), ZnS, Bi
2o
3, Fe
2o
3, CeO
2, TiO
2, A1N and indium diselenide compound.In certain embodiments, TiO
2can be undoped or doping, for example, utilize WO3 doping, wherein, doping can comprise surface-coated.Such particle may have the shape extending to height from spherical, comprises high length-diameter ratio particle, comprises carbon nano-tube (single wall and/or many walls), fullerene, metal nano-rod or metal nanometer line.The example that forms the material of nanometer rods and/or nano wire comprises boron nitride, tin-antiomony oxide, titanium dioxide, silver, copper, tin and gold.
Can there is according to the draw ratio of some particle comprising in the VSD material of various embodiment the draw ratio that exceedes 3:1,10:1,100:1 and 1000:1.Have compared with the material of high length-diameter ratio and be sometimes called " high length-diameter ratio " particle or " HAR " particle.Carbon nano-tube is the example of super HAR particle, has the draw ratio of about 1000:1 or the higher order of magnitude.The material with less draw ratio that can be included in VSD material in various embodiments, comprises carbon black (the approximately L/D of the 10:1 order of magnitude) particle and carbon fiber (the approximately L/D of the 100:1 order of magnitude) particle.
Can there is all size according to the particle comprising in the VSD material of various embodiment, comprise equaling some nano-scale that 500 nanometers or slightly little minimum size or even less (for example, minimum dimension is less than the particle of 100 nanometers or 50 nanometers) are feature.
Can comprise organic material according to the particle comprising in the VSD material of various embodiment.In VSD material, comprise that organic material can provide the thermal coefficient of expansion of improvement and the ability that adheres to metal of thermal conductivity, the fracture toughness of better dielectric constant, enhancing, better compressive strength and improvement to VSD material.In various embodiments, can be included in the various forms that organic semi-conductor example in VSD material comprises carbon, for example, such as semiconductive carbon nano-tube and fullerene (, C60 and C70).In certain embodiments, can revise fullerene and nanotube, make its functionalization, with the chemical race or the Ban Shu family that comprise that covalent bond connects.In various embodiments, other examples of organic semi-conductor that can be included in VSD material comprise poly--3-hexyl thiophene, polythiophene, polyacetylene poly-(3,4-Ethylenedioxy Thiophene), poly-(styrene sulfonic acid), pentacene, (oxine aluminium (III) and N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines [NPD].In addition, organic semiconductor can stem from polymer, aniline, the phenylene, 1 of monomer, oligomer and thiophene, 1,2-ethylidine, fluorenes, naphthalene, pyrroles, acetylene, carbazole, pyrrolidones, cyano group material, anthracene, pentacene, rubrene, perylene and thiadiazoles.Some in these organic materials can be the photoactivate organic material such as polythiophene.
The distribution of reference particle in VSD material polymerization composition, " substantially equably " distribution of particle means, on average, corresponding particle is distributed in material equably and/or randomly, certainly, in the limited subdivision of polymerization composition, may there is the heterogeneous and/or nonrandom caking of such particle.In fact, even after a large amount of mixing, conventionally, the statistical probability of the non-zero of such caking of particle will may be there is in the limited volume having in VSD material, this may occur in all stages of VSD material, comprise when VSD material before adding to undercoat is during in liquid or semi-liquid form, after it is disposed on substrate (for example, by coating), and/or after it solidifies (no matter whether substrate on).But, generally speaking, in the time considering the total amount (or abundant large subdivision of such VSD material) of VSD material, corresponding particle can be regarded as distributing equably and/or randomly in mixture, in the time of the behavior of the corresponding VSD material of modeling, particle can be modeled as equably and/or distribute randomly.
In various embodiments, the character voltage that is arranged in the VSD material structure between two electrodes that contact VSD material is along with the distance between electrode is dwindled and dwindled.VSD material can be in response to fully large change in voltage spaning electrode at the state of conduction substantially with substantially switch between nonconducting state, the distance between such electrode can be expressed as " thickness ", " effective thickness ", " gap ", " switching slot " or " effective clearance ".The effective clearance of VSD material structure can be considered to be level, if two electrodes are disposed in substantially horizontal plane, or, can be considered to be vertical, if if two electrodes are disposed in different vertical planes and/or voltage switches mainly and occurs in the vertical direction.
Fig. 1 shows can be for the horizontal switching construction 100 that comprises VSD material of the esd protection of electronic building brick.In the embodiment in figure 1, electrode 120 and 122 electrically contacts with passage 130 and 132 respectively.
Generally speaking, term " electrode " can be maybe to comprise any conductive structure.Such electrode or the example of conductive structure (for example comprise liner, lead-in wire, trace, passage, through hole, blind passage or the passage of burying), circuit, conducting film, signals layer, conductive layer, conduction PCB layer (for example, conduction pre-preg or packing layer) or to be designed to be any other connector that is coupled to each other function conduction and that electricity for example, is provided in any substrate (, such substrate can comprise any PCB or semiconductor packages).
In various realizations, in electrode 120 and 122 one or both can omit, as long as can be established to the electrical connection of passage 130 and/or passage 132.Electrode 120 and/or 122 can utilize copper or any other suitable electric conducting material manufacture.Electrode 120 and/or 122 can pass through deposition, silk screen printing, bonding or any other adhering method manufacture, no matter is mechanical, chemistry, still otherwise.
In various embodiments, electrode 120 and 122 can cover by the closed material such as insulating barrier or structure.In Fig. 2, electrode 120 and 122 is illustrated as being embedded in insulating barrier 170.
Passage 130 and 132 is the conductive structures that can completely or partially penetrate or can fully pass the layer of VSD material 140.Passage 130 and/or 132 can be through hole, blind passage, the passage of burying, trace or be designed to conduct electricity and promote any other conductive structure that the signal in electronic equipment is propagated.Passage 130 and/or 132 can utilize copper or any other suitable electric conducting material manufacture.Passage 130 and/or 132 can pass through deposition, silk screen printing, bonding or any other adhering method manufacture, no matter is mechanical, chemistry, still otherwise.Passage 130 and/or 132 can be solid (for example, solid metal structure), hollow (for example, conductive cylindrical structure) can be maybe hollow and partly or completely use suitable electric conducting material (the hollow conductive cylindrical structure that for example, partly utilizes electric conducting material to fill) to fill.
In one embodiment, passage 130 and/or 132 partially or even wholly utilizes VSD material to fill, instead of strictly conducts electricity.In such embodiments, passage 130 and/or passage 132 can serve as structure vertical or that level is switched, in this sense, corresponding passage will serve as the structure of insulation substantially conventionally, but, can become substantially and conduct electricity in response to the voltage of character voltage that exceeds corresponding VSD material.In such embodiments, switching can occur along corresponding channel vertical ground or across corresponding channel water level land.
In the embodiment in figure 1, the layer of VSD material 140 is disposed in substrate 160.Substrate 160 can be the substrate (for example, PCB pre-preg layer) of conductive substrates (for example, the layer of copper or other electric conducting materials, sheet or paper tinsel) or insulation.In one embodiment, substrate 160 can be the substrate with variable conductivity such as VSD material layer.
In the embodiment in figure 1, voltage source can be connected, so that it produces voltage difference between electrode 120 and 122.In Fig. 1, voltage source 110 is illustrated as independent voltage source, can be also current source, or any other electric energy.Can run into such layout at testing apparatus or in particular architecture layout, wherein, plan deliberately activates VSD material by strengthening the voltage being generated by voltage source 110.In Fig. 1, voltage source 110 is illustrated as being connected to the passage 130 electrically contacting with electrode 120, and ground wire is illustrated as being connected to the passage 132 electrically contacting with electrode 122.In various alternative application and embodiment, can apply voltage source 110 to passage 132, and can apply ground wire to passage 130.
But from meaning more generally, the voltage applying between electrode 120 and 122 can be any voltage signal or other signals of telecommunication, comprises the voltage being generated by esd event, the esd pulse 112 shown in the embodiment of Fig. 1 is shown.Conventionally by the normal running of end-user device (such as mobile phone) experience in the situation that, can expect that esd pulse 112 (for example has high voltage size, exceed hundreds of volt, and may be several kilovolts) and the short duration (for example, any value between several nanoseconds and several microsecond).Although the duration is short, can expect that the electric current being generated by esd pulse 112 reaches large size, may exceed 10 amperes.If the structure of the embodiment of Fig. 1 is for esd protection; any one in electrode 120 or electrode 122 can be connected to ground plane (or wanting another predetermined point in protected circuit or equipment) directly or indirectly; if and esd pulse 112 arrives other electrodes, can esd pulse 112 be directed to ground wire or this predetermined point by the electrode that is connected to ground wire or predetermined point.
If (or can be alternatively by voltage source 110, by esd pulse 112) voltage applying do not exceed the character voltage of VSD material 140, to keep be nonconducting to VSD material 140 substantially, there is no large electric current between electrode 120 and 122, conducting by VSD material 140 (may, except a certain amount of leakage current, VSD material 140 is usually designed to minimum leakage current, to do not affect the performance that wherein may dispose the electronic equipment of the structure with 100).
For illustrating that by graphics mode voltage source 110 and esd pulse 112 may alternatively exist and describing for generality, the connecting line utilization between each in them and electrode 120 and 122 is shown in dotted line.Generally speaking, can between two electrodes 120 and 122, apply any voltage source, ESD signal or other power supplys, overvoltage signal or voltage potential.Any one in two electrodes also can be connected to ground wire, or to a certain extent with another reference voltage level.The polarity of voltage source 110 can be any one direction between electrode 120 and 122.
Similarly, if (or can be alternatively by voltage source 110, by esd pulse 112) voltage applying exceeds the character voltage of VSD material 140, VSD material 140 switches and becomes substantially and conducts electricity, and a large amount of electric currents conducts between electrode 120 and 122 by VSD material 140.
In the embodiment in figure 1, can say, VSD material 140 switches in " level " direction or " laterally " direction.This level or horizontal direction define with respect to substrate 160, because electric current is by being flowing between passage 130 and passage 132 of VSD material 140, mainly occur in the direction of the primary flat that is arranged essentially parallel to substrate 160.In one embodiment, substrate 160 is the one decks in PCB, under these circumstances, level switching means, electric current is being arranged essentially parallel to most of assemblies and electric component and is installing the direction generation on the main surface (or being attached to the PCB of both sides two surfaces at assembly) of PCB wherein by flowing mainly of VSD material 140.
In various embodiments, VSD material 140 is designed to receive flowing of the both direction of electric current between electrode 120 and 122, depends on the polarity of the voltage applying between electrode 120 and 122.In the embodiment in figure 1, the horizontal switching direction of VSD material 140 represents by arrow 142.Due to substrate 160 (for example, PCB or PCB core) actual be three-dimensional structure, there is larger 2D plane (, the defined plane in one or more surfaces of the PCB being attached to by assembly) and less height dimension, therefore, the bottom horizontal flow sheet of electric current between electrode 120 and 122 can occur in any direction that is arranged essentially parallel to larger 2D plane.In other words, although the embodiment of Fig. 1 seems to point out level and switches the flowing from left to right or from right to left of hint electric current, but, in reality, consider the 3D dimension of the actual substrate such as equipment packages or PCB, flowing of electric current can occur in any direction that is arranged essentially parallel to the 2D plane being formed by the main surface of substrate 160.
With reference to the embodiment of figure 3, level switch mean, electric current will be arranged essentially parallel to X-Y plane illustrated in fig. 3 any direction flow.Recognize that the 3D that electric current relates generally to electric charge by medium mobile flows, level is switched and is not meant that, all electric charges all must only flow in strict level and in-plane.On the contrary, the level of referring to is switched or the switching of generation in the horizontal direction means, the movement of electric charge mainly occurs along the plane of the main 2D plane that is arranged essentially parallel to substrate, still, certainly, at least a portion of current flowing is also possible and expected by showing a certain amount of vertical movement.If do not carry out simulation or analyze in microstage, the vertical movement of electric charge may be more prone to detect.However, generally speaking, level switching means, at least two conductive structures such as passage 130 and 132, dimension with respect to substrate arrangement in perpendicular, and current flowing is between two passages, mainly occurs in the direction of the main 2D plane that is arranged essentially parallel to substrate.
In the embodiment in figure 1, the gap of the distance definition VSD material 140 between electrode 120 and 122.In Fig. 1, this gap is represented as gap 150.Generally speaking, the horizontal clearance of the VSDM structure that level is switched determined by the shortest electric path of the structure across VSD material, and in Fig. 1, and this shortest electric path is by determining with the edge of the electrode 120 and 122 at the interface place of VSD material 140.If in one embodiment, electrode 120 and 122 does not extend towards each other, and such gap 150 illustrated in fig. 1 is less than the distance between passage 130 and 132, and VSD material 140 can switch in the horizontal clearance between passage 130 and 132.
In one embodiment, the Characteristic Field of VSD material 140 defines with V/MIL volt per mil.In this embodiment, by the specific gap size in definition gap 150, then, can determine with actual volt the character voltage of the structure of the VSD material 140 between passage 130 and passage 132.
In one embodiment, the shown structure of the embodiment of Fig. 1 comprises rectangular configuration (for example, the layer of VSD material 140 can be constructed as rectangular configuration).In one embodiment, the structure shown in the embodiment of Fig. 1 comprises warp architecture (for example, the layer of VSD material 140 can be constructed as cylindrical structure substantially).
Fig. 2 show level switch cylindrical structural 200, comprise be arranged in for example, between two conductive planes (, copper plane) that are expressed as conductive plane 230 and conductive plane 232 can be for the VSD material 240 of the esd protection to electronic building brick.The structural equivalents of the embodiment of the general and Fig. 1 of structure 200, still, shows and how can realize each side illustrated in fig. 1 with bending architecture.According to an embodiment, conductive plane 230 is the substantially concentric conductive structures that separated by a certain amount of VSD material with conductive plane 232.For simplicity's sake, at the not shown substrate of the embodiment of Fig. 2 and electrode.
In one embodiment, structure 200 illustrated in fig. 2 is illustrated in the cross section view of the structure realizing in PCB.With reference to the embodiment of figure 3, the ring illustrated in fig. 2 between conductive plane 230 and 232 will be substantially parallel with X-Y plane illustrated in fig. 3.In 3D perspective view, conductive plane 230 and 232 extends in the vertical direction, and this vertical direction is for PCB, by substantially parallel with the shown Z axis of embodiment of Fig. 3.
In the embodiment of Fig. 2, voltage source 210 or ESD signal 212 may produce voltage between conductive plane 230 and 232.If this voltage exceeds the character voltage of VSD material 240, VSD material will be switched on, and VSD material will be from the non-conductive conduction that becomes substantially substantially.In this case, powerful current flowing between conductive plane 230 and 232.For concentric structure as shown in Figure 2, current flowing produces the radiation direction shown in main online 242.With reference to the embodiment of figure 3, the level of structure illustrated in fig. 2 is switched and is meaned, electric current will mainly flow along substantially parallel with X-Y plane illustrated in fig. 3 plane between conductive plane 230 and 232.Equally, as about Fig. 1 embodiment discussed, level is switched and is not meant that, electric current flows along substantially parallel with the main 2D dimension of substrate plane being strictly confined to.On the contrary, can expect, give 3D aspect, VSD material structure and the small stage efficiency of routing, will produce a certain amount of electric current in vertical dimensions.However, level is switched and is meaned, current flowing will really mainly produce with the parallel plane direction of main 2D of substrate, to can use in the horizontal direction by the mobile electric current of VSD material 240, realizes useful electric function.
In one embodiment, the Characteristic Field of VSD material 240 defines with V/MIL volt per mil.In this embodiment, by the specific gap size in definition gap 250, then, can determine with actual volt the character voltage of the structure that is arranged in the VSD material 240 between conductive plane 230 and 232.The bending architecture of the structure 200 of the embodiment of Fig. 2 is more complicated than the cuboid architecture of the structure of the embodiment of Fig. 1 100, therefore, determines that with volt actual characteristic voltage is more difficult for structure 200.However, in one embodiment, the Size dependence connection in the character voltage of VSD material 240 and gap 250, and can be defined as the value taking volt as unit with certainty to a certain degree.
Fig. 3 shows the PCB using about various embodiment and the direction reference being associated.PCB300 illustrated in fig. 3 has the plane by X and the defined main level of Y-axis, and by the defined vertical dimensions of Z axis.This reference frame be independent of PCB in the reality of physical space towards definition, so that the rotation of PCB in space can not change defined horizontal plane and vertical dimensions agreement here.In this patent, with reference to the PCB such as PCB300 illustrated in fig. 3, than this frame of reference has been discussed in more detail, still, can be applied to similarly any other substrate.
Generally speaking, can construct to prevent ESD or other overvoltage event by VSDM, or wherein can comprise " the substrate equipment " of VSDM structure, refer to any PCB, any individual layer of PCB or the group of multiple layers, semiconductor packages, LED substrate, integrated circuit (IC) substrate, intermediary layer or connect two or more electronic building bricks, any other platform of equipment or substrate (wherein, such connection can be vertical and/or level), any other stacking encapsulation format (for example, intermediary layer, wafer level encapsulation, encapsulation in encapsulation, encapsulation or at least two encapsulation or any other stacking combination of substrate in system), or VSD material structure any other substrate that can be attached to or that can comprise VSD material structure therein.For simplicity's sake, substrate equipment can be expressed as " substrate " sometimes.
By using this reference frame, by the line 142 in the embodiment of Fig. 2 defined and by the defined horizontal switching direction of the line 242 in the embodiment of Fig. 3 by overwhelmingly along substantially parallel with the main 2D plane (it is that the X-Y plane going out is as shown in Figure 3 defined) of PCB300 plane.
Fig. 4 A show according to embodiment be applicable to realize vertical switching with VSD material, and can be integrated in VSDM in the substrate equipment such as PCB, flexible circuit or semiconductor die package structure 400.The VSDM structure that comprises multiple layers (wherein at least one deck is VSD material layer), can be called as VSDM structure sometimes, or simply, VSDM structure.Structure 400 can show the cross section view of each layer in the PCB of semiconductor packages or another substrate equipment.Generally speaking the VSDM structure that, is applicable to realize vertical switching also can be called as " the vertical VSDM structure switching ".
By Shocking Technologies, Inc. discloses some vertical VSDM structure switching in the U.S. Patent application 12/417,589 of submitting on April 2nd, 2009, and this patent is all incorporated herein herein by reference.
The shown structure 400 of Fig. 4 A comprises two substrate layers 460 and 462 (being the insulating barrier comprising in PCB), one deck VSD material 440, conductive structure 430 and conductive layer 432.
Conductive structure 430 can be that passage (for example, the passage of laser drill), liner, trace or be designed to conducts electricity and promote any other structure of the propagation of the signal of telecommunication.
Conductive layer 432 can be signals layer or the ground plane being integrated in PCB.In one embodiment, conductive layer 432 is the conductive substrates (for example, being coated with in the above and having solidified the Copper Foil of VSD material 440) of having arranged in the above VSD material 440 at first.
The shown VSDM structure of Fig. 4 A 400 vertical dimensions along PCB are arranged, as indicated by Z axis.With reference to the embodiment of figure 3, the shown Z axis of Fig. 4 A is identical with Z axis illustrated in fig. 3.
Similar with the discussion that embodiment about Fig. 1 and Fig. 2 switches level, vertical switching mean, is being arranged essentially parallel to the flowing of direction generation electric current of vertical direction of substrate.
With reference to the embodiment of figure 3, the vertical switching of the shown structure of embodiment of Fig. 4 A means, if in response to the voltage that exceeds its character voltage, VSD material 440 connects to become conduction substantially, and electric current will mainly flow in the direction that is arranged essentially parallel to Z axis illustrated in fig. 3 between conductive structure 430 and conductive layer 432.Equally, as the embodiment about Fig. 1 and Fig. 2 switches and discussed for level, vertically switch and do not mean that electric current flows the direction being strictly confined to being arranged essentially parallel to the Z axis of substrate (or vertical axis).On the contrary, can expect, small stage efficiency in the 3D physical features of the 3D physics aspect of given conductor, the 3D structure of PCB layout, VSD material structure and shape and VSD material itself (for example, be dispersed in the current spread in particle in VSD material and/or between particle), a certain amount of current flowing at least occurs in horizontal dimensions in the space of the localization in VSD material.However, vertical switching means, current flowing, by mainly producing in substantially parallel with the Z axis (or vertical axis) of pcb board or other substrates direction, to can use the electric current that flows through in the vertical direction VSD material 440, is realized useful electric function.
In one implementation, VSDM structure 400 also comprises the layering interconnection 434 contacting with VSD material 440 with conductive structure 430 and arrange.Layering interconnection 434 is conductive features of the cross section conductive area located of the border (such as the border between the shown conductive structure 430 of Fig. 4 A and VSD material 440) to increase between conductive structure and VSD material structure that can add in various embodiments.The ability of adding layering interconnection and can improve corresponding conductive structure and carry high current at such boundary, particularly has on border otherwise may cause the little physical features of concentrating of electric current or electric field.This possibility, for example, has less area of section at the point of its contact VSD material 440 at conductive structure 430, more caters to the need.
Generally speaking, be arranged in the layering interconnection between conductive features and the structure of VSD material, such as the shown layering interconnection 434 of Fig. 4 A, can between conductive structure and VSD material, provide the current flowing of enhancing, mechanical property (for example, the adhesion of enhancing or bonding of the improvement of the interface between conductive structure and VSD material, better hot coefficients match, etc.), the electrical connection of the improvement between conductive structure and VSD material, and other similar advantages.
In various embodiments, layering interconnection 434 can be arranged to, completely or partially conductive structure 430 is separated with VSD material 440, or, can be disposed in another boundary of conductive structure 430, for example, so that extra electric path (, vertically) to be provided between conductive structure 430 and VSD material 440.
In one embodiment, layering interconnection 434 separates conductive structure 430 and VSD material 440 physically.For manufacturing such embodiment, can on VSD material 440, form layering interconnection 434, then, can layering interconnect 434 above form conductive structure 430, avoid conductive structure 430 penetrating completely layering interconnection 434.
In one embodiment, layering interconnection 434 and VSD material 440 physical contacts, and a part for layering interconnection 434 sealing of the interface place at VSD material 440 conductive structures 430.For manufacturing such embodiment, can on VSD material 440, form layering interconnection 434, then, can layering interconnect 434 above form conductive structure 430, penetrate layering interconnection 434, for example, (to set up direct physical contact between conductive structure 430 and VSD material 440, by laser drill in layering interconnection 434, until VSD material 440, then, utilize electric conducting material to fill this hole, to produce conductive channel).
Fig. 4 B shows can be integrated in PCB or in another substrate and being applicable to realize the VSDM structure 490 that comprises VSD material layer 498 of vertical switching according to embodiment.In one embodiment, the shown VSDM structure 490 of Fig. 4 B comprises construction package and multiple supplementary features and the layer of the shown structure 430 of Fig. 4 A.
The shown VSDM structure 490 of Fig. 4 B comprises multiple substrate layers, and they are generally insulation (or dielectrics), are illustrated as pre-preg filler 480, core 482, pre-preg filler 484, core 486 and pre-preg filler 488.
The shown VSDM structure 490 of Fig. 4 B also comprises multiple electrically conductive signal layers, is expressed as conductive layer L1 to L6, and is numbered conductive layer 470,472,474,476,478 and 479.These signals layers can be in pcb board, or commutes the assembly and the circuit element conducting electrical signals that are attached to PCB, maybe can serve as ground wire or other voltage references point.
The shown VSDM structure 490 of Fig. 4 B also comprises two conductive structures, is expressed as conductive structure 450 and 452.Any one in conductive structure 450 and 452 or both can be that passage, liner, trace or be designed to conducts electricity and promote any other structure of the propagation of the signal of telecommunication.The shown VSDM structure of Fig. 4 B 490 vertical dimensions along PCB are arranged, as indicated by Z axis.With reference to the embodiment of figure 3, the shown Z axis of Fig. 4 A is identical with Z axis illustrated in fig. 3.
In the embodiment of Fig. 4 B, the layering interconnection 499 interface places that are disposed between conductive structure 452 and VSD material 498.In various realizations, layering interconnection 499 can be similar to the layering interconnection 434 of the embodiment of Fig. 4 A.Layering interconnection 499 can be for the interface between conductive structure 452 and VSD material 498 provides various advantages, comprises layering interconnection 434 those advantages discussed about the embodiment of Fig. 4 A.
If VSD material layer 498 is exposed to the voltage that exceeds its character voltage between conductive structure 452 and conductive layer 474, the VSD material being included in VSD material layer 498 will be switched on, and will become conduction substantially.In this case, electric current will mainly flow in the vertical direction between conductive structure 452 and conductive layer 474.If this thing happens, VSD material layer 498 vertically switches.
In one embodiment, similar with the discussion providing about the embodiment of Fig. 1 and Fig. 2, in the time measuring with volt, the character voltage of VSD material layer 498 is associated with the gap size of VSD material.For the embodiment of Fig. 4 B, this gap size is by the distance being substantially equal between conductive structure 452 and conductive layer 474, and this distance is also the thickness of VSD material layer 498 just at the right time substantially.Although the accurate formula that gap size is associated with the character voltage of VSD material may along with multiple variablees (for example, accurately the entire amount of VSD material prescription, VSD material structure or layer, by its realize the VSD material structure switching true form, be connected to the impedance of any circuit element of VSD material, etc.) and change, but, for the VSD material prescription that used in various embodiments, the less gap of VSD material generally can cause less character voltage.For some application, less character voltage may be first-selected (application of for example, switching in the voltage compared with low for expection VSD material response).
But, consider as general design, the size of dwindling the gap of VSD material must become too little by balance VSD material structure, and therefore lose in its desirable operating characteristic some or all risk (for example, too thin VSD material structure, when be exposed to similar trigger voltage in rapid succession time, may show repeatability, the consistency of reduction, may experience the ability of the heat dissipation of reduction, maybe may suffer higher short circuit or the risk burning out).
With horizontal cutting commutation ratio, the vertical advantage of switching is that, in some manufacturing environment, compared with level switching structure, controlling the vertical gap size of constructing that switches may be more prone to.For example, can utilize current techniques to realize and comprise simultaneously the tolerance of the manufacturing cost in the horizontal VSD material of generation gap (such as the gap 150 of embodiment of Fig. 1 and the gap 250 of the embodiment of Fig. 2), may not can enough little, or may be difficult to safeguard exactly across the PCB that is prevalent in jumbo industrial manufacturing line.Result, on different pcb boards, or the level on even identical pcb board is switched VSDM structure, may show high undesirable statistical fluctuation on robustness in their corresponding character voltage and/or operation, and such fluctuation is used standard fabrication technique and the process of in current production line, disposing may more be difficult to solve.
By contrast, in certain embodiments, the vertical tolerance being associated with VSDM structure (such as the shown VSD material structure 400 of Fig. 4 A) may be more prone to safeguard exactly.For example, can guarantee the consistent and accurate thickness of VSD material 440 if VSD material 440 is arranged on process on conductive layer 432, gap 442 will have correspondingly consistent and accurate gap size.In practice, this can realize by being combined with advanced coating technique with suitable inspection, metering and monitor procedure.
With horizontal cutting commutation ratio, vertical another advantage of switching is, can in the time producing, have larger area of section for the VSD material structure of carrying out vertical switching, and when VSD material becomes while substantially conducting electricity, electric current flows across this cross section.Larger area of section can carry higher electric current conventionally, and therefore cause better performance characteristic and the durability of corresponding VSD material structure.For example, it is proportional with the thickness of the VSD material layer of measuring in the vertical direction that area is switched in the cross section of the VSD material 140 of the embodiment of Fig. 1, and this thickness is conventionally little and tend to produce less area of section.By contrast, it is proportional with the surface area of definite electrode 920 in X-Y plane that area is switched in the cross section of the VSD material 940 of the embodiment of Fig. 9, and this surface area tends to produce larger area of section.
For arrange one deck VSD material on substrate, such as the VSD material 440 on the conductive layer 432 in the embodiment of the VSD material 140 on the substrate 160 in the embodiment of Fig. 1 or Fig. 4 A, can on substrate, be coated with and curing VSD material.As example, with reference to the embodiment of figure 4A, for arrange one deck VSD material 440 on conductive layer 432, can be for example, at the upper coating of the conducting strip of material (, copper) curing VSD material, then, can be in PCB, introduce the curing VSDM structure producing as compound layer, the conducting strip of material becomes conductive layer 432, and VSD material layer becomes VSD material 440.The remainder of the shown feature of Fig. 4 A can form by the various manufacturing steps in manufacture process.
Unless pointed out clearly in addition, term " VSD material structure ", " VSDM structure ", " structure of VSD material ", " structure of VSDM ", " VSD material stacks " or " VSDM is stacking " refer to and comprise following any combination, layout or other structures: (a) at least one VSD material structure, and (b) one or more in the following: (i) insulation component (for example, pre-preg layer in PCB or other insulating barriers or structure, insulating barrier in semiconductor packages or structure, etc.), (ii) electrode (for example, Elecrical connector in conductive channel or semiconductor packages in PCB), (iii) semiconductor element (for example, the structure building with semi-conducting material), and/or (iv) different VSD material structure.Adopting an example of the VSD material structure of fairly simple configuration, is to be arranged in VSDM structure (for example, VSD material layer) on Copper Foil and the combination of paper tinsel itself.
Other examples of the VSDM structure of the configuration of more complicated, to construct in this patent with about the VSDM of the open and/or claimed vertical switching of various embodiment, comprise the VSDM structure 400 of the embodiment of Fig. 4 A, the VSDM structure 490 of the embodiment of Fig. 4 B, the VSDM structure 500 of the embodiment of Fig. 5, the VSD material structure 600 of the embodiment of Fig. 6, the VSD material structure 900 of the embodiment of Fig. 9, the VSD material structure 1000 of the embodiment of Figure 10, the VSD material structure 1100 of the embodiment of Figure 11, the VSD material structure 1200 of the embodiment of Figure 12 A, the VSD material structure 1300 of the embodiment of Figure 13, the VSD material structure 1400 of the embodiment of Figure 14, the VSD material structure 1500 of the embodiment of Figure 15 A, the two-way switching construction 1700 of the VSD material structure 1600 of the embodiment of Figure 16 and the embodiment of Figure 17.
Series of steps be can pass through, coating and curing VSD material structure on substrate realized, such as VSD material layer.For example, with reference to the embodiment of figure 4A, such as VSD material 440, can use the series of steps such as the following step by the VSD material layer that finally becomes conductive layer 432 for arranging on substrate:
(1) when VSD material is during in liquid or semi-liquid stage, by VSD Distribution of materials to substrate (for example, due to the particle and the other materials that are dispersed in VSD material, the viscosity of VSD material is tended to the viscosity higher than the neat liquid such as water, and therefore tends to flow slowlyer);
(2) on substrate, disperse one deck VSD material, and simultaneously across the surface of substrate, the thickness of VSD material is maintained in required scope and tolerance;
(3) across the larger surface of the cated substrate of tool, the thickness of monitoring, detection and/or test VSD material layer, to guarantee that the thickness of VSD material maintains in required scope and tolerance really;
(4) by VSD material is exposed in heat, solidify it (for example, the VSD material being coated with is placed in to baking box on substrate, there, temperature is controlled and/or in suitable scope, change);
(5) remove to a certain extent solvent or other materials, such solvent or other materials may be for former manufacturing step and be designed to remove at this moment to promote processing subsequently; And
(6) monitoring, detection and/or test comprise the VSD material structure producing that is arranged in the curing VSD material layer on substrate, to guarantee that curing VSD material layer is with regard to thickness, consistency, defect concentration, switched voltage, physics resilience, adhesiveness, pliability or other physical attributes, thermal endurance or other hot attributes, and/or other relevant parameters, show feature and the tolerance of expection.
Except coating, can also carry out to arrange the VSD material structure such as VSD material layer on substrate with additive method.Such additive method (for example comprises deposition, silk screen printing, extrusion coated, scraper type coating, superimposed, mechanical adhesion, by the VSD material in pre-hardening thickness, then, it is attached to substrate), or by any other adhering method, no matter be mechanical, chemistry or other mode.No matter what the method that uses is, the VSD material structure producing will comprise one deck VSD material (no matter whether conducting electricity) being arranged on substrate, and VSD material is in solid state, and can carry out its voltage switching function.
In one embodiment, can in the actual manufacture process of PCB, VSD material be applied in one deck of PCB, instead of produce and comprise the VSD material structure of curing one deck VSD material on substrate in advance, and then VSD material structure is integrated into PCB.With reference to figure 4B, for example, can in the process of manufacturing VSDM structure 490, conductive layer L3474 be attached to pre-preg filler 484, then, on conductive layer L3474, arrange and curing one deck VSD material 498.Then, can on VSD material 498, form layering interconnection 434 (for example, silk screen printings).Then, core 482 can be attached to VSD material layer 498, subsequently, at the interior formation conductive structure 452 of core 482, or before attached at the interior generation conductive structure 452 of core 482.
Fig. 5 shows the VSDM structure 500 that is applicable to realize with VSD material vertical switching according to embodiment.The VSDM structure of Fig. 5 can be integrated in the substrate equipment such as PCB, flexible circuit or semiconductor die package.
The VSDM structure 500 of Fig. 5 comprises one group of conductive layer 520 and 522, and they can be the electrically conductive signal layers in PCB or other electrodes.The VSDM structure 500 of Fig. 5 also comprises one deck VSD material 540.
Between conductive layer 520 and VSD material 540, arrange layering interconnection 530.Between VSD conductive layer 522 and conductive layer 520, arrange layering interconnection 532.In alternative realization, any one in layering interconnection 530 and 532 or both do not exist, and under these circumstances, VSD material 540 contacts with one or two conductive layer direct physical.
In various embodiments, " layering interconnection " is the part that can be used as the vertical VSDM structure switching, or use with together with the VSDM structure of vertical switching, with along comprising the electric path transmission voltage of one or more VSDM structures and/or any conductive structure of electric current.In certain embodiments, arrange that layering for example interconnects, so that conduction (, in level course) to be provided in the horizontal direction.In certain embodiments, arrange that layering interconnection is to provide in the vertical direction conduction (for example,, across one or more level courses, and/or between two or more level courses).In certain embodiments, arrange that layering interconnection is with flatly and vertically, and/or conduction is provided obliquely.
In various realizations, layering interconnection such as the layering interconnection 530 or 532 of Fig. 5, can produce by any suitable process, comprise by silk screen printing, stencilization, deposition, bonding, use the superimposed of heat and/or pressure, by any other physical attachment (for example, bonding or bonding), or for example, by (layering interconnection being building up in advance in substrate, in PCB, arrange layering interconnection as layer, structure, conductive cores or pre-preg layer, in semiconductor packages, arrange as layer or conductive structure).In one embodiment, the substrate (for example, being used as the Copper Foil of the substrate of one deck VSD material) that is attached to one deck VSD material can serve as layering interconnection, to provide horizontal conductivity in PCB or other substrates.Generally speaking, being applicable to the layering interconnection of use together with the VSDM of various vertical switchings constructed embodiment can produce by any machinery, chemistry or other suitable deposition process.
In various embodiments, layering interconnection can have a series of impedances.For example, in some implementations, may need to have the layering interconnection (for example, there is low-down resistance and can not introduce the film of the high conduction of any significant voltage drop) that can ignore impedance.As another example, can deliberately build layering and interconnect to there is higher impedance, in the time that electric current flows through it, (for example introduce certain electric pressure drop, it is embedded circuit component that layering interconnection can be designed as, and maybe can comprise embedded circuit component).To be the conducting film with the resistance between 25 and 1000 ohm with the example that is not conventionally regarded as layering interconnection that can negligible resistance.In one embodiment, layering interconnection can be built as the element 1592 of the embodiment of Figure 15 A, maybe can be modeled as the element 1592 of the embodiment of Figure 15 A and operate.
Can use the epoxy resin of filling carbon about various embodiment, or for example, manufacture the layering interconnection with the resistivity of can not ignore as the nichrome (, the thin film resistive layer of heat deposition on Copper Foil) being deposited on copper.
In various embodiments, layering interconnection can utilize will provide the material with high-k or the combination of materials of higher capacitance to manufacture to layering interconnection.
In various embodiments, layering interconnection can be made up of any material or combination of materials that can conduction current and be suitable for using together with substrate application.
The example that can be used to manufacture the material of layering interconnection (such as layering interconnection 530 or 532) about various embodiment is to be manufactured and with trade name " 3M by 3M Corporation
tMz-Axis Electrically Conductive Tape9703 " sell Z axis conductive strips.In the time arranging as substantial horizontal layer, Z axis conductive strips show anisotropy vertical conduction along Z axis, propagate when electric current that it conduct electricity substantially with box lunch along Z axis, still, flatly insulate on substantially.
Other examples that can be used to manufacture about various embodiment the material of layering interconnection (such as layering interconnection 530 or 532) are: the slurry of silver slurry, copper slurry, other metal types, are coated with silver-colored copper layer, carbon-coating, ferroic material or comprise ferritic compound, conductive epoxy resin or polymer, or any other material layer, structure or connector construction that can conduction current.Generally speaking, except non-layered interconnection has anisotropic conductive, in various embodiments, layering interconnection can be used together with the VSDM of vertical switching structure, with at level, vertical and/or incline direction conduction current, depend on the particular architecture of corresponding embodiment.
In the embodiment of Fig. 5, voltage source can be connected between conductive layer 520 and 522.In Fig. 5, voltage source 510 is illustrated as independent voltage source, can be also current source, or any other electric energy.Can run into such layout at testing apparatus or in particular architecture layout, wherein, plan deliberately activates VSD material by strengthening the voltage being generated by voltage source 510.
But from meaning more generally, the voltage applying between conductive layer 520 and 522 can be any voltage signal or other signals of telecommunication, comprises the voltage being generated by esd discharge, esd pulse 512 as shown in the embodiment of Fig. 5 is shown.Under the normal operational circumstances of conventionally being experienced by end-user device (such as mobile phone), can expect that esd pulse 512 (for example has high voltage size, exceed hundreds of volt, may, several kilovolts) and the short duration (for example, any value between several nanoseconds and several microsecond).Although the duration is short, can expect that the electric current being generated by esd pulse 512 reaches large size, may exceed 10 amperes.If the structure of the embodiment of Fig. 5 is for esd protection; in conductive layer 520 and 522 can be connected to ground plane (or another predetermined point) in protected circuit or equipment, and esd pulse 512 can be directed to and arrive ground wire or this predetermined point.
If (or can be alternatively by voltage source 510, by esd pulse 512) voltage applying do not exceed the character voltage of VSD material 540, to keep be nonconducting to VSD material 540 substantially, there is no large electric current between conductive layer 520 and 522, interconnect 530 and 532 by layering, and conduct (possibility by VSD material 540, except a certain amount of leakage current, VSD material 540 is usually designed to minimum leakage current, to do not affect the performance of the electronic equipment of the structure that wherein may dispose 500).
For illustrating that by graphics mode voltage source 510 and esd pulse 512 may alternatively exist and for general description, the connecting line utilization between each in them and conductive layer 520 and 522 is shown in dotted line.Generally speaking, can between conductive layer 520 and 522, apply any voltage source, ESD signal or other power supplys, overvoltage signal or voltage potential.Any one in two conductive layers also can be connected to ground wire, or is connected to the point with another reference voltage level.
If (or can be alternatively by voltage source 510, by esd pulse 512) voltage applying exceeds the character voltage of VSD material 540, VSD material 540 switches and becomes conduction substantially, and a large amount of electric currents is by VSD material 540, between conductive layer 520 and 522, conducts.
If for given VSD material composition, the Characteristic Field of VSD material with V/MIL volt per mil (V/mil) (or otherwise, taking the volt of unit length) as unit definition, the character voltage of one deck VSD material with given thickness can be defined as to specific voltage value.For example, if the thickness of the VSD material layer 540 across gap 542 in the embodiment of Fig. 5 is represented as T, the Characteristic Field of the VSD material of expressing with V/MIL volt per mil is represented as ECH, and the characteristic of correspondence magnitude of voltage of expressing with volt is represented as VCH, and can be expressed as follows:
V
cH(V)=E
cH(V/mil) * T (mil) (formula 1)
If suppose that the value of Characteristic Field ECH is constant, or can be approximated to be constant across corresponding thickness T, the formula in formula 1 is generally set up.
But generally speaking, Characteristic Field ECH may not be the constant across the corresponding gap of VSD material, and can have the value across the varied in thickness of VSD material structure.As long as Characteristic Field ECH is not constant in the switching slot of VSD structure, can, by across corresponding thickness T integration Characteristic Field ECH, obtain character voltage VCH.
Can find out from formula 1, by dwindling the thickness of VSD material layer 540, correspondingly dwindle the character voltage of VSD material structure 540.Can comprise the value lower than 2 mils for the example values of the thickness of the VSD material 540 of the industrial use of mobile phone.For further dwindling character voltage, the thickness of VSD material layer 540 can be narrowed down to lower than 1 mil.
If the impedance of layering interconnection 530 and 532 and conductive layer 520 and 522 is insignificant, there is no large voltage drop across those conductive layers and layering interconnection, and therefore VSD material 540 is switched on, and after the voltage being produced by voltage source 510 or esd pulse 512 reaches the character voltage of VSD material layer 540, become conduction substantially.
Fig. 6 shows the VSDM structure 600 that is applicable to realize with VSD material vertical switching according to embodiment.The VSDM structure of Fig. 6 can be integrated in the substrate equipment such as PCB, flexible circuit or semiconductor die package.
The VSDM structure 600 of Fig. 6 comprises one group of conductive layer 620 and 622, and they can be the electrically conductive signal layers in PCB or other electrodes.The VSDM structure 600 of Fig. 6 also comprises the VSD material structure 640 of arranging as the layer with the thickness that is expressed as T that is substantially equal to gap 642.
Between conductive layer 620 and VSD material structure 540, arrange layering interconnection 630.Conductive layer 622 is with VSD material 640 physical contacts and electrically contact.
According to various embodiment, except the conventional rigid substrate such as rigidity PCB and rigidity semiconductor packages, the vertical VSDM structure switching also can encapsulate, and realize in other flexible apparatus at flexible circuit, flexible substrate, flexible semiconductor.For realizing this target, correspondingly adjust the formula of the VSD material using to show the elasticity of enhancing.For example, as Common Criteria, reduce metal particle content in VSD material (for example,, by reducing or removing the metal particle being dispersed in VSD material), once reduce the curing fragility of VSD material, and therefore make VSD material be more suitable for flexible application.
Have one or more layers of suitable machinery and/or environment durability attribute by interpolation, the vertical VSD material structure switching can further be applicable to the realization of flexible application.For example, for the VSD material structure 600 shown in the embodiment of Fig. 6, add two extra plays, as polyimide substrate 680 and 682.
Polyimide material is generally light and soft, has higher machinery and extends and tensile strength, and tend to have the restoring force for heat and chemical reaction of improvement.Polyimide material is for electronics industry, to manufacture flexible cable, conduct insulation or passivation layer in the manufacture of digital semi-conductor and MEMS chip, as dielectric film, as high-temperature adhesives, for the application of medical pipe, and for needing other application of environment restoring force of flexibility, lower weight and improvement.
The another kind application that comprises the VSD material structure of the vertical switching of the heat-resisting material polyimide substrate 680 and 682 included in the shown VSD material structure 600 of embodiment of Fig. 6 is heat-resisting application, for example, such as compared with the area of high ambient temperature (having, the weather of heat) or in the equipment with limited ventilation (for example, sealing EMBEDDED AVIONICS or have limited or there is no a cooling system) in LED panel or the electronic application of operation.
The operation of VSDM structure 600 illustrated in fig. 6 and electrical characteristic are generally similar to operation and the electrical characteristic of VSDM structure 500 illustrated in fig. 5.Particularly, when apply voltage between conductive layer 620 and 622 time, estimate not have large voltage drop in conductive layer 620 and 622 or in the layering 630 interior generations that interconnect, as long as their corresponding impedance is insignificant, and therefore VSD material 640 will be switched on, when by voltage source 610 (or, can be alternatively, by esd pulse 612) voltage that applies is while exceeding the character voltage of VSD material 640, becomes conduction substantially.The character voltage of VSD material 640 is by proportional with the thickness T of VSD material 640.
Fig. 7 shows the method for vertically switching VSDM structure that comprises layering interconnection or other electrodes according to being used to form of embodiment.As shown in Figure 7, method 700 comprises each step that can be used to vertically switching the one or more conductive structures of generation in VSDM structure (such as one or more layerings interconnection or other electrodes).Can apply extra optional step, with the VSDM structure that further refinement was produced.
It is the US patent 7 of " Light-emitting device using voltage switchable dielectric material " at title, 825, in 491, described the method for producing various device (such as LED equipment) by utilizing VSD material to electroplate, the content of having quoted this patent at this as a reference.
In the embodiment of Fig. 7, in step 710, apply VSD material to substrate or surface (for example,, to Copper Foil).In step 720, for example, at VSD material arrangements one deck non-conducting material (, one deck photo anti-corrosion agent material).
In step 730, the specific pattern that defines one or more conductive structures (such as layering interconnection or other electrodes) is carried out patterning non-conductive layer by utilization.For example, the patterning in step 730 can define and will be arranged on position and the shape of layering interconnection 434 of embodiment of Fig. 4 A of VSD material layer 440 tops.In one embodiment, nonconducting layer is photoresist layer, by by photoresist by photomask is exposed in laser, and ensuing etching process, produces pattern.As known in the art, can use positivity or negative photoresist.As the result of step 730, one or more regions of VSD material, by the non-conductive layer of the one or more parts corresponding to pattern, become exposure.
In step 740, apply the voltage of the character voltage that exceeds VSD material, and therefore make VSD material substantially conduct electricity.Can directly apply this voltage to VSD material or to the conductive substrates (for example,, to Copper Foil) of having arranged in the above VSD material.The voltage applying can be constant voltage or variable voltage (for example, pulsed).
When VSD material is when conduction, in step 750, carry out ion deposition process, for example, to form conductive structure (, the layering interconnection such as the layering interconnection 434 of the embodiment of Fig. 4 A) in the exposed region of VSD patterns of material.Can carry out various known deposition process, ionic medium is deposited in defined at least some exposed region of pattern by the VSD material exposing.In one implementation, carry out electroplating process, the exposed region of VSD material is immersed in electrolytic solution.
Realization as an alternative, carries out ion deposition by powder coated process.In this process, powder is charged, and they are put in the exposed region of the VSD material of conduction state substantially.Can by by powder deposition at exposed region, or by substrate is immersed in powder groove, complete applying of powder.
Further, another realization can be used electron spray process.Ionic medium can be included in solution with the form of charged particle.In the time that VSD material is conduction, can add solution to undercoat.Applying of spraying can comprise use ink or spray paint.
In various embodiments, can carry out at VSD material the state in conduction substantially with other deposition techniques time, the exposed region of VSD material is carried out to ion deposition, for example, such as vacuum moulding machine (, physical vapor deposition (PVD) or chemical vapour deposition (CVD) (CVD) process).For example, in PVD, metal ion is incorporated in chamber to be combined with gas ion.Can make the exposed region conduction of VSD material, to there is contrary electric charge, to attract ion and the ions binding in chamber.In CVD, can on the surface of substrate, apply the film of ionic material to VSD material.
In step 760, optionally, from substrate, remove non-conducting material, for example, to leave the conductive structure (, vertically switch the layering using in VSDM structure interconnect or another electrode) of formation.In one implementation, in the time that photo anti-corrosion agent material is used as non-conducting material, apply alkaline solution (for example, KOH) to substrate, or water, to remove photo anti-corrosion agent material.
In one embodiment, after removing photoresist layer, can be to produced VSDM Structural application polishing step.In one embodiment, carry out the substrate of the VSDM structure that polishing produces with chemico-mechanical polishing.
Fig. 8 shows according to Figure 80 0 of the sample responses voltage envelope of the VSDM structure with the vertical switching such as VSDM structure 500 illustrated in fig. 5 or VSDM illustrated in fig. 6 structure 600 of embodiment.Voltage response curves 820 illustrated in fig. 8 is to obtain by measuring in the time repeatedly applying the input voltage of transmission line pulse (" TLP ") form across the voltage of VSD material layer of the down suction with 2 mils.For example, in the embodiment of Fig. 5, this measured value can be realized with respect to the voltage of conductive layer 522 by measuring conductive layer 520, and voltage source 510 applies TLP.
In one embodiment, in response to TLP, the measurement of the response voltage to VSDM structure can be processed as follows with TLP maker and oscilloscope:
(1) TLP maker is to the electrode of VSDM structure along coaxial cable transmission line road transmitted, and VSDM constructs the gap having and has characteristic of correspondence voltage;
(2) in the time that TLP moves to the target electrode of VSDM structure, oscilloscope catches TLP;
(3) TLP arrives the target electrode of VSDM structure.A part for the energy of TLP, as echo, is reflected;
(4) oscilloscope catches reflection echo; And
(5) can process TLP and reflected signal with computer, assess the character voltage across corresponding gap of VSDM structure.
In long time scale, show the shown response curve 820 of part 802 of figure.The shown response curve 822 of part 804 of figure is the response curves 820 that show in the shorter time scale of 16 nanoseconds.The input of TLP voltage is illustrated as signal 810 and signal 812.
As shown in Figure 80 0, along with input signal 810 increases, follow the tracks of at first input voltage across the voltage of VSD material layer, still, along with VSD material starts to conduct increasing electric current, start to depart from.At certain point, VSD material switches, and conducts electricity to become substantially, and response signal is stabilized in the value below 200V, although input signal 810 continues to strengthen.Can estimate that the character voltage of VSD material layer is between 150V and 220V from Figure 80 0.
Fig. 9 shows the VSD material structure 900 that is applicable to realize with VSD material vertical switching according to embodiment.The VSD material structure 900 of the vertical switching of Fig. 9 can be integrated in any electronic equipment comprising such as the substrate equipment of PCB, flexible circuit or semiconductor die package, so that the protection for ESD and other overvoltage event to be provided.Fig. 9 shows the section of the VSD material structure of the vertical direction of the substrate such as PCB.
The VSD material structure 900 of Fig. 9 comprises one group of electrode 920 and 922.Electrode 920 and 922 and the VSD material structure 940 that is illustrated as one deck in the embodiment of Fig. 9 arrange in contact.The layer of VSD material 940 has the thickness that is substantially equal to gap 942, is expressed as T.Realize for business, the scope that T can value, depends on formula and required character voltage and other physics or the operating characteristic of VSD material 940 of VSD material 940.The particular exemplary value of T comprises 2 mils, 1.5 mils, 1 mil and 0.5 mil.Generally speaking, expect the smaller value of T, so that the lower character voltage of VSD material structure 940 to be provided.
Passage 930 runs through the layer of VSD material 940, and contacts with electrode 922.Passage 930 conducts electricity substantially.Layering interconnection 970 contacts with 922 the horizontal plane on opposite and the layer of VSD material 940 along electrode 920.The various layering interconnection that can be used to realize layering interconnection 970 are discussed about the embodiment of Fig. 5, have just been prevented in the horizontal direction that the Z axis layering interconnection of efficient current flowing will not be suitable for this specific implementation.
Layering interconnection 970 is disposed in pre-preg layer 980.Pre-preg layer 980 is parts of the substrate equipment such as PCB, and with this substrate another layer, core 982 physical contacts.Pre-preg layer 980 insulate substantially.
Passage 930 and layering interconnection 970 are conducted electricity substantially, generally can suppose to have and can ignore impedance.Therefore, voltage does not have large loss and propagates between electrode 922 and layering interconnection 970.
If by voltage source 910 or applied the voltage of the character voltage that exceeds VSD material structure 940 between electrode 920 and 922 by esd pulse 912, VSD material 940 becomes substantially and conducts electricity.Because electrode 922 and layering interconnect 970 by the voltage level in substantially the same, will between electrode 920 and layering interconnection 970, mainly produce in the vertical direction across the current flowing of VSD material 940.A reason of this respect is, electric current tends to select the path with minimum impedance to propagate, and between layering interconnection 970 and electrode 920 vertically the layer through VSD material 940 this minimum impedance path will be generally provided.
The fact that VSD material structure 940 in the embodiment of Fig. 9 vertically switches not necessarily means, electric current will strictly and only flow across gap 942 along Z axis.On the contrary, because the embodiment about Fig. 3 is than the various effects of discussing in more detail, in VSD material structure 940, may there is in the horizontal direction the current flowing of a certain rank.But generally speaking, when VSD material 940 in the embodiment at Fig. 9 switches to become while substantially conducting electricity, current flowing will mainly occur in the direction that be arranged essentially parallel to the Z axis of corresponding substrate (or vertical axis).
Because the current flowing in the VSD material structure 940 of the embodiment of Fig. 9 will occur across gap 942 substantially in vertical direction, therefore, the character voltage of VSD material structure 940 is determined the thickness T by gap 942.For some formula of VSD material, this character voltage can be determined according to formula 1.
The advantage of the VSDM structure 900 of the shown vertical switching of embodiment of Fig. 9 is electrode 920 and 922 to be arranged in to horizontal direction with limited precision.This be because, their specified level layout is not crucial, as long as between electrode 920 and layering interconnection 970, exist enough overlapping, and as long as the electric contact that electrode 922 and passage 930 have had.
Another advantage of the VSDM structure 900 of the shown vertical switching of embodiment of Fig. 9 is, can be by the metal electrode such as electrode 920 and 922 (for example, be made of copper) be arranged in skin, therefore, promote LED equipment maybe can have benefited from heat dissipation and/or the conduct electrical energy of other cooling equipment of the heat improved.
In various embodiments, the VSDM structure of vertical switching illustrated in fig. 9 can by add various other layers and feature (conduction, insulation with semiconductive) realize, simultaneously, observe general work principle: when VSD material becomes while substantially conducting electricity, electric current there is no loss across VSD material structure and conducts once (for example, by the one group of conductive features being electrical contact with each other), conducts once across the vertical thickness of VSD material structure.In this general method for designing, determine the character voltage of VSD material by the vertical thickness of VSD material structure.
Figure 10 shows the VSD material structure 1000 that is applicable to realize with VSD material vertical switching according to embodiment.The VSD material structure 1000 of the vertical switching of Figure 10 can be integrated in any electronic equipment comprising such as the substrate equipment of PCB, flexible circuit or semiconductor die package, so that the protection for ESD and other overvoltage event to be provided.Figure 10 shows the section of the VSD material structure of the vertical direction of the substrate such as PCB.
The VSD material structure 1000 of the vertical switching of Figure 10 is similar to the VSD material structure 900 of Fig. 9 in general manner, just replace the single VSD material structure 940 in the embodiment of Fig. 9, in the embodiment of Figure 10, have two VSD material structures: have across the layer of the VSD material 1040 of the vertical thickness T1 in gap 1042 and there is the layer across the VSD material 1044 of the vertical thickness T2 in gap 1046.Realize for business, the scope that T1 and T2 can values, depends on the formula of VSD material 1040 and 1044, and depends on VSD material structure 1040 and 1044 required character voltage and other physics or operating characteristics.In various embodiments, the formula of VSD material 1040 and 1044 can be identical, or can be not identical.Similarly, in various embodiments, the vertical thickness T1 of VSD material 1040 and 1044 and T2 respectively can be identical, or can be not identical.The particular exemplary value of the summation of T1 and T2 comprises 2 mils, 1.5 mils, 1 mil and 0.5 mil.Generally speaking, expect the smaller value of T1 and/or T2, so that the lower character voltage of VSD material structure 1040 and/or 1042 to be provided.
Generally speaking, construct two or more VSD material structures of the compound group of the VSD material structure of the part of (such as the VSD material 1040 and 1044 for the manufacture of VSDM structure 1000) for generation of the VSDM as vertical switching, can there is identical, substantially the same or different characteristic relative to each other, comprise dielectric constant, adhesion characteristics, rigidity, flexibility, composition and thickness.
The VSD material structure 1000 of Figure 10 comprises one group of electrode 1020 and 1022.Electrode 1020 contacts with a VSD material structure of the layer that is illustrated as VSD material 1040 in Figure 10 with 1022.Path 10 30 runs through the layer of VSD material 1040 and 1044, and contacts with electrode 1022.Path 10 30 conducts electricity substantially.Conductive layer 1070 contacts with 1022 the horizontal plane on opposite and the layer of VSD material 1044 along electrode 1020.Conductive layer can for example, be made up of electric conducting material (, copper), or can be layering interconnection.The various layering interconnection that can be used to realize conductive layer 1070 are discussed about the embodiment of Fig. 5, have just been prevented in the horizontal direction that the Z axis layering interconnection of efficient current flowing will not be suitable for this specific implementation.
Conductive layer 1070 is adjacent with pre-preg layer 1080.Pre-preg layer 1080 is parts of the substrate equipment such as PCB or flexible circuit, and with this substrate another layer, core 1082 physical contacts.Pre-preg layer 1080 insulate substantially.
Path 10 30 and conductive layer 1070 conduct electricity substantially, generally can suppose to have and can ignore impedance.Therefore, voltage does not have large loss between electrode 1022 and conductive layer 1070 and propagates.
If by voltage source 1010 or applied the voltage of the summation of the character voltage that exceeds VSD material structure 1040 and 1044 between electrode 1020 and 1022 by esd pulse 1012, VSD material 1040 and 1044 becomes substantially and conducts electricity.Due to electrode 1022 with conductive layer 1070 by the voltage level in substantially the same, will between electrode 1020 and conductive layer 1070, mainly produce in the vertical direction across the current flowing of VSD material 1040 and 1044.A reason of this respect is, electric current tends to select the path with minimum impedance to propagate, and between conductive layer 1070 and electrode 1020 vertically the layer through VSD material 1040 and 1044 this minimum impedance path will be generally provided.
As a result, the shown VSDM structure 1000 of the embodiment of Figure 10 will vertically switch, and current flowing mainly occurs in the direction that is arranged essentially parallel to the Z axis of corresponding substrate (or vertical axis) by VSD material structure 1040 and 1044.
Because the current flowing in the VSD material structure 1040 and 1044 of the embodiment of Figure 10 will occur substantially in vertical direction across gap 1042 and 1046, the character voltage of the compound VSD material structure therefore, forming by two different VSD material structures 1040 and 1044 is determined respectively by the formula by two VSD materials and by the thickness T 1 in gap 1042 and the thickness T 2 in gap 1046.For some formula of VSD material, this compound characteristic voltage can be by determining across gap 1042 and across the single character voltage phase Calais of the VSD material structure 1040 and 1044 in gap 1046 respectively.
Generally speaking, in the compound structure of two or more structures that the vertical VSD material switching occurs by it, no matter whether be in direct physical contact with each other, the validity feature voltage of the compound group of VSDM structure is all associated with the summation of the single thickness of VSD material structure, so that along with total compound thickness increases, the compound characteristic voltage producing also tends to increase.
In various embodiments, the VSDM structure of vertical switching illustrated in fig. 10 can by add various other layers and feature (conduction, insulation with semiconductive) realize, simultaneously, observe general work principle: when single VSD material structure becomes while substantially conducting electricity, electric current there is no loss across two or more VSD material structures a vertical direction and (for example conducts, by the one group of conductive features being electrical contact with each other), conduct in contrary vertical direction across the thickness of two or more VSD material structures.In this general method for designing, the character voltage of the compound group of VSD material structure is to determine by total vertical thickness of single VSD material structure and by the character voltage of each VSD material.
Figure 11 shows the VSD material structure 1100 that is applicable to realize with VSD material vertical switching according to embodiment.The VSD material structure 1100 of the vertical switching of Figure 11 can be integrated in any electronic equipment that comprises substrate equipment, so that the protection for ESD and other overvoltage event to be provided.In various embodiments, the example that VSD material structure 1100 can be integrated in substrate equipment wherein comprises PCB and semiconductor die package.Figure 11 shows the section of the VSD material structure of the vertical direction of substrate equipment.
The VSD material structure 1100 of the vertical switching of Figure 11 is similar to the VSD material structure 1000 of Figure 10 in general manner, just replace two VSD material structures of the embodiment of Figure 10, the embodiment of Figure 11 comprises individual layer VSD material 1140, has the vertical thickness T across gap 1142.However, in various embodiments, can use multilayer VSD material, as what describe in general manner about the embodiment of Figure 10.Realize for business, the scope that T can value, depends on the formula of VSD material 1140, and depends on character voltage and other physics or operating characteristic that VSD material 1140 is required.May be thought of as and comprise 2 mils, 1.5 mils, 1 mil, 0.5 mil, 0.2 mil and less for the manufacture of the particular exemplary value of the thickness T of the realization in process.Generally speaking, expect the value of less T, so that the lower character voltage of VSD material structure 1140 to be provided.
The VSD material structure 1100 of Figure 11 comprises one group of electrode 1120 and 1122.Electrode 1120 and 1122 and VSD material structure 1140 arrange in contact.Conduction pre-preg layer 1170 is arranged in contact along the horizontal plane on the opposite of electrode 1120 and 1122 and the layer of VSD material 1140.Conduction pre-preg layer can be the one deck in the substrate equipment such as PCB, flexible circuit or semiconductor packages.Conduction pre-preg layer 1170 is or comprises and being applicable to minimum loss or one deck and/or the conductive structure group of not losing ground conduction current.Another layer of conduction pre-preg layer 1170 and this substrate, core 1182, physical contact.Core 1180 insulate substantially.
If by voltage source 1110 or applied the voltage of the character voltage that exceeds VSD material structure 1140 between electrode 1120 and 1122 by esd pulse 1112, VSD material 1140 becomes substantially and conducts electricity.Current flowing across VSD material 1140 will and conduct electricity between pre-preg layer 1070 at electrode 1120, and mainly produce in the vertical direction between electrode 1122 and conduction pre-preg layer 1170.Once electric current is in specific vertical direction, flow across VSD material structure 1140 from electrode 1120 or 1122, electric current is with minimum loss or do not lose and propagate along conduction pre-preg layer 1170, then, electric current flows to another in two electrodes 1122 or 1120 across VSD material structure 1140 in contrary vertical direction.Electric current is why main across the reason of the Es-region propagations of VSD material 1140 is in the vertical direction, electric current tends to select the path with minimum impedance to propagate, and vertically will generally provide this minimum impedance path through the layer of VSD material 1140 between any one and conduction pre-preg layer 1170 in electrode 1120 or 1122.If the distance between two electrodes 1120 and 1122 is dwindled it become can be suitable with gap 1142, VSD material 1140 can conduct more multiple current in the horizontal direction.In certain embodiments, this can assign to dwindle by the one-tenth that produces VSD material 1140, and this VSD material 1140 shows anisotropy vertical conduction, and with box lunch, in the time that Z axis is propagated electric current, it conduct electricity substantially, still, flatly insulate on substantially.
As a result, the shown VSDM structure 1100 of the embodiment of Figure 11 will vertically switch, and current flowing mainly occurs in the direction that is arranged essentially parallel to the Z axis of corresponding substrate (or vertical axis) by VSD material structure 1140.
In various embodiments, the VSDM structure of vertical switching illustrated in fig. 11 can by add various other layers and feature (conduction, insulation, semiconductive) realize, simultaneously, observe general work principle: first, when single VSD material structure becomes while substantially conducting electricity, electric current conducts a vertical direction across one or more VSD material structures, then, with minimum loss or do not lose in the horizontal direction conduction, again then, in the time that single VSD material structure keeps substantially conducting electricity, thickness conduction in contrary vertical direction across one or more VSD material structures.In this general method for designing, the character voltage of one or more layers of VSD material is to determine by total vertical thickness of single VSD material structure and by the character voltage of each VSD material.
Figure 12 A shows the VSD material structure 1200 that is applicable to realize with VSD material vertical switching according to embodiment.The VSD material structure 1200 of the vertical switching of the embodiment of Figure 12 A can be integrated in any electronic equipment that comprises substrate equipment, so that the protection for ESD and other overvoltage event to be provided.In various embodiments, the example that VSD material structure 1200 can be integrated in substrate equipment wherein comprises PCB and semiconductor die package.Figure 12 A shows the section of the VSD material structure of the vertical direction of substrate equipment.
The VSD material structure 1200 of the vertical switching of Figure 12 A comprises the layer of VSD material 1240, has the vertical thickness T across gap 1242.In various embodiments, can use multilayer VSD material, as what describe in general manner about the embodiment of Figure 10.Realize for business, the scope that T can value, depends on the formula of VSD material 1240, and depends on character voltage and other physics or operating characteristic that VSD material 1240 is required.The particular exemplary value that realizes thickness T used in manufacture process can consider to comprise 2 mils, 1.5 mils, 1 mil, 0.5 mil, 0.2 mil and less value.Generally speaking, expect the value of less T, so that the lower character voltage of VSD material structure 1240 to be provided.
The VSD material structure 1200 of Figure 12 A comprises the one group of electrode 1120,1122 and 1124 contacting with VSD material structure 1240 and arrange.Conductive layer 1270 is adjacent with pre-preg layer 1230.Between conductive layer 1270 and VSD material layer 1240, arrange pre-preg layer 1230.Layering interconnection 1280 and VSD material layer 1240 are arranged in contact.In one embodiment, in the interior formation layering interconnection 1280 of pre-preg layer 1230, as shown in Figure 12 A.In one embodiment, can be used as pre-preg layer 1230 is arranged to layering interconnection 1280 from the different layer (, not in the interior formation of pre-preg layer 1230) of VSD material 1240 separation.Pre-preg layer 1230 can be the one deck in the substrate equipment such as PCB, flexible circuit or semiconductor packages.
Passage 1250 passes pre-preg layer 1230, and electrically contacts with layering interconnection 1280, and sets up and electrically contact between conductive layer 1270 and layering interconnection 1280.
In the embodiment of Figure 12 A, electrode 1220 and electrode 1224 are connected to ground wire.In certain embodiments, one or two electrode can be connected to a different point in circuit, may comprise be connected to voltage source, to circuit element or assembly, or can guide to it another reference voltage electromotive forces of esd pulse or other voltages.
If applied the voltage of the character voltage that exceeds VSD material structure 1240 in conductive layer 1270 by esd pulse 1212 (or by voltage source), VSD material 1240 becomes substantially and conducts electricity.Across the current flowing of VSD material 1240 will layering interconnect 1280 and electrode 1220 and/or electrode 1224 between mainly occur in the vertical direction.
As a result, the shown VSDM structure 1200 of the embodiment of Figure 12 A will vertically switch, and current flowing mainly occurs in the direction that is arranged essentially parallel to the Z axis of corresponding substrate (or vertical axis) by VSD material structure 1240.In Figure 12 A, as esd discharge path 1290, show in response to ESD signal 1212, electric current is constructed 1200 the general electric path that flows and follow by VSDM.
The embodiment of Figure 12 A further shows the circuit element that is expressed as embedded impedance 1296.In various embodiments, this circuit element can partially or even wholly be included in VSDM structure 1200, or can construct 1200 with VSDM (for example communicates, it can be constructed 1200 with VSDM and be embedded in same PCB, or also can surperficial be attached to VSDM structure 1200 PCB that are included in wherein).
In the embodiment of Figure 12 A, embedded impedance 1296 is illustrated as being embedded at least in part the circuit element in VSDM structure 1200.Particularly, Figure 12 A is shown embedded impedance 1296 to be embedded at least in part in pre-preg layer 1230.In that substitute or complementary embodiment, embedded impedance 1296 can be arranged in substrate or VSDM constructs other positions in 1200.For example, embedded impedance 1296 can be arranged in VSD material structure 1240, in another PCB layer, or in another substrate such as semiconductor packages.
In various embodiments, embedded impedance 1296 is made up of one or more circuit elements, or comprises one or more circuit elements.In various embodiments, embedded circuit component impedance 1296 can comprise one or more resistors, one or more inductors, one or more capacitors, one or more ferroic circuit elements (for example, can comprise or can not comprise the embedded ferroic circuit element of VSD material), one or more diodes, one or more transistors, one or more filters (for example, one or more low passes, band leads to the various combinations with high pass filter or filter stage), any other passive or active circuit element or electronic building brick, there is any layering interconnection that can ignore impedance, any layering with the impedance of can not ignore (for example interconnects, one deck high dielectric material), there is any electrode or other conductive structures of the impedance of can not ignore, and/or aforementioned every any combination.
Embedded impedance 1296 can be used together with VSD material structure 1240, so that the partially or completely esd protection for the electronic building brick such as the shown electronic building brick 1298 of Figure 12 A to be provided.In Figure 12 A, electronic building brick 1298 is illustrated as being connected to embedded impedance by electrode 1228.Embedded impedance 1296 also electrically contacts with conductive layer 1270.In the situation that there is no VSD material 1240, the esd pulse applying at conductive layer 1270 or other large voltage will cause the propagation to electronic building brick 1298 by embedded impedance 1296 of large voltage and/or electric current.But, in the situation that there is VSD material 1240, the VSDM structure 1200 vertically switching in response to exceed VSD material structure 1240 character voltage large voltage and switch on, then, by electrode 1220, by otherwise at least a portion of esd pulse that arrives electronic building brick 1298 is turned to ground wire.The embedded impedance 1296 of structure 1200 use of therefore, vertically switching prevents that electronic building brick 1298 from avoiding being present in the esd pulse of damageability potentially or the damage of other overvoltage event of conductive layer 1270.
On April 28th, 2011 submit to; and title is the U. S. application series No.13/096 of " Embedded Protection Against Spurious Electrical Events "; in 860, at length disclose a kind of architecture and operation of circuit, can use to provide the partially or completely esd protection for the electronic building brick such as the shown electronic building brick 1298 of Figure 12 A together with the VSD material structure 1240 of a part for the structure 1200 as vertically switching.Here quoted the content of this patent application as a reference.In this patent the VSDM structure of disclosed and/or claimed vertical switching can with at U. S. application series No.13/096; embodiment disclosed and/or claimed in 860 uses together, so that the protection for the ESD of electronic building brick and the enhancing of other overvoltage event to be provided.
In one embodiment, electronic building brick 1298 can be embedded in VSDM structure 1200.In one embodiment, electronic building brick 1298 for example can be embedded in, in the same substrate (, same PCB) comprising VSDM structure 1200.In one embodiment, electronic building brick 1298 can be attached in the same substrate comprising VSDM structure 1200 on surface.In one embodiment, electronic building brick 1298 can be included in from the different electronic equipment electrically contacting comprising the substrate of VSDM structure 1200 (for example, VSDM structure 1200 can be included in the connector that is attached to electronic equipment, and this electronic equipment comprises electronic building brick 1298).In one embodiment, VSDM structure 1200 is included in the encapsulation of electronic building brick 1298, or otherwise is attached to or is included in the substrate with electronic building brick 1298 physical contacts or electrical communication.
In various embodiments, electronic building brick 1298 can be in the following any one or multinomial: semiconductor chip or another integrated circuit (IC) are (for example, microprocessor, controller, memory chip, RF circuit, baseband processor etc.), light-emitting diode (LED), MEMS chip or structure, or be arranged in any other assembly or the circuit element of electronic equipment internal.
In one embodiment, embedded impedance 1296 can realize with the ferroic circuit element that comprises the conductive structure being embedded at least in part in ferroic material.In the U.S. Patent application 13/115,068 of submitting on May 24th, 2011, disclose the ferroic circuit element that comprises ferroic VSD material and be applicable to so embedded realization, this patent is all incorporated herein herein by reference.In various embodiments, embedded impedance 1296 can be implemented as embedded ferroic inductor, embedded ferroic VSD material inductor, embedded ferroic capacitor, embedded ferroic VSD material capacitor, or as any other embedded ferroic circuit element or embedded ferroic VSD material circuit element.
Figure 12 B shows the VSD material structure 1202 that is applicable to realize with VSD material vertical switching according to embodiment.Figure 12 A and the shown embodiment of Figure 12 B are generally identical, and just, in the embodiment of Figure 12 B, embedded impedance 1296 is replaced by embedded impedance 1297, and electrode 1228 is replaced by electrode 1229, and electronic building brick 1298 is replaced by electronic building brick 1299.As shown in Figure 12 B, embedded impedance 1297 is no longer embedded in pre-preg layer 1230, but separates with pre-preg layer 1230 by conductive layer 1270 on the contrary.Optional electrode 1229 is connected embedded impedance 1297 with electronic building brick 1299.
In various embodiments, architecture, realization and the function of embedded impedance 1297 and electronic building brick 1299 can be substantially with the embodiment about Figure 12 A for embedded impedance 1296 and described identical for electronic building brick 1298, be that embedded impedance 1297 and electronic building brick 1299 are arranged as discussed about Figure 12 B.
In one embodiment, the shown embedded impedance 1297 of Figure 12 B is not to be embedded in VSDM structure 1200, but is for example embedded in, in the same substrate (, same PCB) comprising VSDM structure 1200.In one embodiment, embedded impedance 1297 and/or electronic building brick 1299 can be attached in the same substrate comprising VSDM structure 1200 on surface.In one embodiment, embedded impedance 1297 and/or electronic building brick 1299 can be included in and (for example, VSDM structure 1200 can be included in the connector that is attached to the electronic equipment that comprises embedded impedance 1297 and/or electronic building brick 1299) in the different electronic equipment electrically contacting comprising the substrate of VSDM structure 1200.In one embodiment, VSDM structure 1200 and embedded impedance 1297 are included in the encapsulation of electronic building brick 1298, or otherwise are attached to or are included in the substrate with electronic building brick 1298 physical contacts or electrical communication.
Figure 13 shows can be integrated in PCB or in another substrate and being applicable to realize the VSDM structure 1300 that comprises VSD material layer 1340 of vertical switching according to embodiment.
VSDM structure 1300 illustrated in fig. 13 comprises multiple electrically conductive signal layers, is expressed as conductive layer L1 to L6, and is numbered conductive layer 1370,1372,1374,1376,1378 and 1379.These signals layers can be in pcb board, or commutes the assembly and the circuit element conducting electrical signals that are attached to PCB, maybe can serve as ground wire or other voltage references point.These signals layers separate by the layer or the dielectric layer that are building up to the multiple insulation substantially in corresponding substrate equipment (not identifying particularly) in Figure 13.For PCB, such insulating barrier can comprise pre-preg filler, core, overlapping layers, or any other similar film or structure.VSDM structure illustrated in fig. 13 1300 vertical dimensions along PCB or other substrates are arranged.
VSDM structure 1300 illustrated in fig. 13 also comprises passage 1350.In various realizations, passage 1350 can be passage, liner, trace, or is designed to conduct electricity and promotes any other structure of the propagation of the signal of telecommunication.Passage 1350 and layer L11370 and layer L21372 energising.
The VSDM structure 1300 of the embodiment of Figure 13 also comprises the VSD material structure that is shown VSD material structure 1340.VSD material structure 1340 is disposed in vertical direction, and constructs multiple conductive layers of 1300 through VSDM.As shown in figure 13, VSD material structure 1340 is through conductive layer L21374 and L31376.In various realizations, VSD material structure 1340 can be through two or more conductive layers or other conductive structures in the substrate such as PCB, flexible circuit or semiconductor packages.In one embodiment, VSD material structure 1340 can for example, by utilizing VSD material to carry out filling channel (passage of, burying)) or substrate such as PCB, flexible circuit or semiconductor packages in any other available space.In one embodiment, VSD material structure 1340 is for example, by bore a hole (, mechanically or utilize laser) in substrate, then, utilizes VSD material to fill that this hole produces.In one embodiment, VSD material structure 1340 can (for example produce by the white space deposition VSD material creating in substrate in the manufacture process of substrate, by the calibration in the gap being pre-existing in or the hole producing in advance in the different adjacent layer of this PCB, and in PCB, create vertical cavity, then, inject VSD material and curing VSD material at this cavity inside).
If esd pulse 1312 arrives a layer L11370 (or applying another voltage source to layer L11370), corresponding voltage is by the loss with minimum or do not lose and propagate into a layer L21372.At layer L21372, the voltage producing in response to esd pulse 1312 arrives VSD material structure 1340.Exceed the character voltage of VSD material structure 1340 across specific down suction if arrive the voltage of VSD material structure 1340, VSD material will be switched on and will in this gap, become substantially and conduct electricity.
In the embodiment of Figure 13, conductive layer L31374 is connected to ground wire.In other are realized, can be connected to ESD signal can be to another point of its conduction, such as free voltage datum mark or circuit element or assembly for conductive layer L31374 (or another conductive structure electrically contacting with corresponding VSD material structure or layer).
Due in the embodiment of Figure 13, conductive layer L31374 is connected to ground wire and esd pulse 1312 propagates into conductive layer L21372, therefore, by being gap 1342 substantially in the vertical effective clearance of switching of VSD material structure 1340 internal triggers, have roughly by the definite effective thickness T of the perpendicular separation between conductive layer L21372 and ground plane L31374.Thickness T will be determined the character voltage (for example,, according to formula 1) of VSD material structure 1340 at least in part.In some implementations, more than one VSD material structure can be vertically stacking (no matter being in layer adjacent or that separate physically) or (for example can flatly connect, interconnect by layering), as about other embodiment described in this patent.
Once the shown VSD material structure 1340 of the embodiment of Figure 13 is switched on and become substantially and conduct electricity across gap 1342, electric current will, across gap 1342, between conductive layer L21372 and ground plane L31374, mainly flow in the vertical direction.If this thing happens, VSDM structure 1300 vertically switches.
Figure 14 shows can be integrated in PCB or in another substrate and being applicable to realize the VSDM structure 1400 that comprises VSD material structure 1440 of vertical switching according to embodiment.In one embodiment, expression illustrated in fig. 14 is the expanded view of the VSDM structure 1300 of Figure 13.
VSDM structure 1400 illustrated in fig. 14 comprises three electrically conductive signal layers, is expressed as conductive layer L1 to L3, and is numbered conductive layer 1470,1472 and 1474.Conductive layer 1474 is connected to ground wire.Can be alternatively, conductive layer 1474 can be connected to circuit element or assembly, or is connected to another voltage reference point.These three signals layers separate by the layer or the dielectric layer that are embedded into the multiple insulation substantially in corresponding substrate equipment (not identifying particularly) in Figure 14.For PCB, such insulating barrier can comprise pre-preg filler, core, overlapping layers, or any other similar film or structure.VSDM structure illustrated in fig. 14 1400 vertical dimensions along PCB or other substrates are arranged.
VSDM structure 1400 illustrated in fig. 14 also comprises passage 1450.In various realizations, passage 1450 can be passage, liner, trace, or is designed to conduct electricity and promotes any other structure of the propagation of the signal of telecommunication.Passage 1450 and layer L11470 and layer L21472 energising.
The VSDM structure 1400 of the embodiment of Figure 14 also comprises the VSD material structure that is shown VSD material structure 1440.VSD material structure 1440 is disposed in vertical direction, and electrically contacts with conductive layer L21474 and L31476.In various realizations, VSD material structure 1440 can be through two or more conductive layers or other conductive structures in the substrate such as PCB, flexible circuit or semiconductor packages.In one embodiment, VSD material structure 1440 can by utilize VSD material for example come, in filling channel (passage of, burying) or the substrate such as PCB, flexible circuit or semiconductor packages can with any other space make.
If esd pulse 1412 arrives a layer L11470 (or applying another voltage source to layer L11470), corresponding voltage is by the loss with minimum or do not lose and propagate into a layer L21472 by passage 1450.At layer L21472, the voltage producing in response to esd pulse 1412 arrives VSD material structure 1440 and produces voltage.Exceed the character voltage of VSD material structure 1440 across specific down suction if arrive the voltage of VSD material structure 1440, VSD material will be switched on and will become substantially and conduct electricity across this gap.
Due in the embodiment of Figure 14, conductive layer L31474 is connected to ground wire and esd pulse 1412 propagates into conductive layer L21472, therefore, to be gap 1442 substantially in the vertical effective clearance of switching of VSD material structure 1440 internal triggers, there is the effective thickness of about T, roughly determined by the perpendicular separation between conductive layer L21472 and ground plane L31474.Thickness T will be determined the character voltage (for example,, according to formula 1) of VSD material structure 1440 at least in part.In some implementations, more than one VSD material structure can be vertically stacking (no matter being in layer adjacent or that separate physically) or (for example can flatly connect, interconnect by layering), as about other embodiment described in this patent.
When the shown VSD material structure 1440 of the embodiment of Figure 14 is switched on and becomes substantially and conduct electricity across gap 1442, electric current will, across gap 1442, between conductive layer L21472 and ground plane L31474, mainly flow in the vertical direction.If this thing happens, VSDM structure 1400 vertically switches.Exceed the esd pulse 1412 (or another voltage source) of VSD material structure across the voltage of the character voltage in gap 1442 in response to putting on layer L11470 and having, electric current will flow as the shown electric path of electric path 1490 along Figure 14 substantially.
Figure 15 A shows the VSD material structure 1500 that is applicable to realize with VSD material vertical switching together with one or more circuit elements according to embodiment.The VSD material structure 1500 of the vertical switching of Figure 15 A can be integrated in any electronic equipment that comprises substrate equipment, so that the protection for ESD and other overvoltage event to be provided.In various embodiments, the example that VSD material structure 1500 can be integrated in substrate equipment wherein comprises PCB, flexible circuit and semiconductor die package.Figure 15 A shows the section of the VSD material structure of the vertical direction of substrate equipment.
The VSD material structure 1500 of the vertical switching of Figure 15 A is generally similar to the VSD material structure of Figure 11, just replace the conduction pre-preg layer 1170 of the embodiment of Figure 11, the embodiment of Figure 15 A comprises two layering interconnection 1570 and 1572 that connect by circuit element 1592.Circuit element 1592 has the impedance of can not ignore, and in Figure 15 A, is expressed as H.In various embodiments, layering interconnection 1570 and 1572 can be maybe to comprise some part or any other conductive structure of some part, conductive layer or the conductive layer of electrode, layering interconnection or layering interconnection.
The VSD material structure 1500 of the vertical switching of Figure 15 A comprises and being disposed between electrode 1520 and layering interconnection 1572, and is also disposed in respectively the VSD material structure 1540 between electrode 1522 and layering interconnection 1570.The VSD material structure 1540 of the embodiment of Fig. 5 has across horizontal dimensions substantially uniformly and approximate the vertical thickness in gap 1542, is expressed as T.
Layering interconnection 1570 and 1572 and be insulator substantially or be dielectric substrate layer substantially, core 1582 is adjacent.Comprise therein in the substrate equipment of VSDM structure 1500 and can have extra play (for example, one or more pre-preg layers).
In response to the voltage being produced between electrode 1520 and 1522 by esd pulse 1512 (or by voltage source 1510), VSD material structure 1540 can be switched on and become substantially and be conducted electricity.To be the twice in gap 1542 substantially in the vertical effective clearance of switching of VSD material structure 1540 internal triggers, have the value that roughly doubles T effective thickness (this be because, in the time that VSDM structure 1500 vertically switches, electric current is propagated the direction contrary twice across gap 1542).Thickness T will be determined the character voltage (for example,, according to formula 1) of VSD material structure 1540 at least in part.If the impedance of element 1592 is zero maybe can ignore, or in the situation that there is no element 1592, the minimum voltage that must be produced by esd pulse 1512 before 1540 energisings of VSD material structure approximates the twice (because for to make the circuit between two electrodes 1520 and 1522 complete, electric current must flow twice across gap 1542 in different vertical direction) of the character voltage of VSD material structure 1540.
But the element 1592 that has the impedance of can not ignore in existence, the minimum voltage that must be produced by esd pulse 1512 before 1540 energisings of VSD material structure will exceed the voltage approximating across the voltage drop of element 1592.For example, if element 1592 is resistors, approximate two during extraordinarily across the voltage drop of element 1592 of character voltage of VSD material structure 1540 when the voltage of esd pulse 1512, VSD material structure 1540 conducts electricity switching on and becoming substantially.
In various embodiments, circuit element 1592 can be, maybe can comprise, one or more resistors, one or more inductors, one or more capacitors, one or more ferroic circuit elements (for example, can comprise or can not comprise the embedded ferroic circuit element of VSD material), one or more diodes, one or more transistors, one or more filters (for example, one or more low passes, band leads to the various combinations with high pass filter or filter stage), any other passive or active circuit element or electronic building brick, any layering interconnection, electrode or there is other conductive structures and aforementioned every any combination of the impedance of can not ignore.Circuit element 1592 can comprise the combination of Single Electron assembly or electronic building brick, and can use together with VSD material structure 1540, to provide for the electronic equipment of wherein integrated VSDM structure 1500 or the partially or completely esd protection of substrate equipment.
In one embodiment, circuit element 1592 is embedded in the substrate such as PCB, flexible circuit or semiconductor packages.For example, with reference to figure 15A, element 1592 can be embedded in wherein can one deck PCB of integrated VSDM structure 1500 in (for example, circuit element 1592 can be included in sandwich layer, pre-preg layer, overlapping layers, or in any other layer of PCB).In one embodiment, element 1592 can be electronic building brick or the circuit element that is attached to wherein PCB that can integrated VSDM structure 1500.In one embodiment, element 1592 can be included in the circuit element in semiconductor chip, this semiconductor chip by wherein can be integrated the package substrate of VSDM structure protect.
In the embodiment of Figure 15 A, element 1592 is illustrated as being connected between layering interconnection 1570 and 1572.In that substitute or complementary embodiment, element 1592 or other circuit elements can be arranged in substrate or VSDM constructs other positions in 1500.For example, element 1592 or other circuit elements can be arranged between electrode 1520 and VSD material structure 1540, between electrode 1522 and VSD material structure 1540, before the voltage being produced by esd pulse 1512 arrives electrode 1520 or electrode 1522, in the electric path of such voltage, or electrically contact with VSDM structure 1500 and one or more electronic building brick that will be prevented from esd event.
In one embodiment, element 1592 can be with realizing by conductive structure is embedded in to the embedded circuit component of manufacturing in ferroic material at least in part, and ferroic material is embedded in substrate at least in part.The ferroic circuit element that comprises ferroic VSD material and be applicable to so embedded realization is disclosed in U.S. Patent application 13/115,068.
When the shown VSD material structure 1540 of the embodiment of Figure 15 A is switched on and becomes substantially and conduct electricity across gap 1542, electric current will be across gap 1542, once between electrode 1520 and layering interconnection 1572, once in the opposite direction, between electrode 1522 and layering interconnection 1570, mainly flow in the vertical direction.
In one embodiment, replace single VSD material structure 1540, VSDM structure 1500 comprises two VSD material structures with different vertical thickness, so that the gap between electrode 1522 and layering interconnection 1570 is different from the gap between electrode 1520 and layering interconnection 1572.
In some implementations, vertically stacking (no matter being in layer adjacent or that separate physically) of more than one VSD material structure.
Realize for business, the scope that the thickness T in gap 1542 can value, depends on the formula of VSD material 1540, and depends on character voltage and other physics or operating characteristic that VSD material 1540 is required.Consider that the effective thickness of VSDM structure 1500 is by the definite situation of the twice of the value of T, may be thought of as and comprise 1 mil, 0.75 mil, 0.5 mil, 0.25 mil, 0.1 mil and less for the manufacture of the particular exemplary value of the thickness T of the realization in process.Generally speaking, expect the smaller value of T, so that the lower character voltage of VSD material structure 1540 to be provided, still, in the batch manufacturing environment of business, as one man to realize and may have more challenge.
Figure 15 B shows the embedded impedance that use has the circuit element of the first resistance value and has the second resistance value that is applicable to according to embodiment, realizes the VSD material structure 1502 of vertical switching with VSD material.Figure 15 A is generally identical with the shown embodiment of Figure 15 B, and just, in the embodiment of Figure 15 B, element 1592 is replaced by element 1593, and the circuit element that is illustrated as embedded impedance 1597 is embedded in VSD material structure 1540.Electronic building brick 1599 electrically contacts with embedding impedance 1597.This electrically contacts and can realize by optional electrode 1529.
In various embodiments, the architecture of element 1593, realization and function are substantially described identical for element 1592 with the embodiment about Figure 15 A, and just element 1593 has the impedance that is expressed as H1.Embedded impedance 1597 has the impedance that is expressed as H2.In various embodiments, element 1593 and embedded impedance 1597 can be or can not be the circuit element (for example, they are inductor both, or in them one can be resistor, and another can be capacitor) of same type.In various embodiments, impedance H1 and H2 can be identical, or also can be different.
In various embodiments, architecture, realization and the function of embedded impedance 1597 and electronic building brick 1599 can be substantially with the embodiment about Figure 12 A for embedded impedance 1296 and described identical for electronic building brick 1298, be that embedded impedance 1597 and electronic building brick 1599 are arranged as discussed about Figure 12 B, and use together with the VSDM of vertical switching structure 1502.
As shown in Figure 15 B, embedded impedance 1597 is included in VSD material structure 1540 at least in part, and electrically contacts with electrode 1522.In the situation that there is no VSD material structure 1540, the large voltage applying at electrode 1522 will propagate into electronic building brick 1599 by embedded impedance 1597, damage potentially electronic building brick 1599.
But if VSD material structure 1540 exists and switch in response to putting on the abundant large esd pulse 1512 of electrode 1522, at least a portion that may flow to the electric current of electronic building brick 1599 flows to layering interconnection 1570 by VSD material 1540 now.As a result, prevent electronic building brick 1599, may also have embedded impedance 1597 to be damaged by overvoltage.
As the embodiment about Figure 12 B is discussed for embedded impedance 1297, replace and being embedded in VSD material layer 1540, embedded impedance 1597 for example can alternatively be included in, comprising in the same substrate of VSDM structure 1502 (, same PCB).In one embodiment, embedded impedance 1597 and/or electronic building brick 1599 can be attached in the same substrate comprising VSDM structure 1502 on surface.In one embodiment, embedded impedance 1597 and/or electronic building brick 1599 can be included in and (for example, VSDM structure 1502 can be included in the connector that is attached to the electronic equipment that comprises embedded impedance 1597 and/or electronic building brick 1599) in the different electronic equipment electrically contacting comprising the substrate of VSDM structure 1502.In one embodiment, VSDM structure 1502 and embedded impedance 1597 are included in the encapsulation of electronic building brick 1599, or otherwise are attached to or are included in the substrate with electronic building brick 1599 physical contacts or electrical communication.
Figure 16 shows according to the combination of the VSD material structure 1601 of the VSD material structure 1600 of the vertical switching of embodiment and level switching.In the embodiment of Figure 10, VSDM structure 1000 comprises two structures of carrying out together the vertical VSD material that is disposed in perpendicular layers switching.In the embodiment of Figure 16, VSD material structure 1600 and 1601 combines being arranged to the VSD material structure 1646 vertically switching across gap 1648 and being arranged to the VSD material structure 1640 flatly switching across gap 1642.
In one embodiment, the VSD material structure 1601 that the vertical VSD material structure 1600 switching switches with level is included in the different substrate being connected by connector 1628.In one embodiment, in the VSD material structure 1601 that the vertical VSD material structure 1600 switching and level are switched one or both are included in flexible substrate, and connector 1628 is flexible connectors.
In the embodiment of Figure 16, the vertical VSD material structure 1600 switching comprises one group of two electrode 1620 and 1622 and VSD material structure 1646.Electrode 1620 contacts with the VSD material structure 1646 of the down suction 1648 across having thickness T 1 with 1622.The VSD material structure 1646 on the opposite of layering interconnection 1670 and electrode 1620 contacts.Electrode 1622 illustrated in fig. 16 passes VSD material layer 1646, and directly electrically contacts with layering interconnection 1670.In alternative embodiment, electrode 1622 can pass VSD material layer 1622 by halves, and under these circumstances, the second down suction can exist and (have and equal across VSD material 1646, or be less than the thickness of T1), can there is vertical switching across VSD material 1646.
In the embodiment of Figure 16, the VSD material structure 1601 that level is switched comprises two electrodes 1624 and 1622 and VSD material structure 1640.Electrode 1624 and 1626 and arrange in contact across the VSD material structure 1640 of the down suction 1642 with thickness T 2.The VSD material structure 1640 on the opposite of layering interconnection 1672 and electrode 1624 and 1626 is arranged in contact.
In the embodiment of Figure 16, the conductive structure that is expressed as connector 1628 connects the electrode 1622 of the vertical VSD material structure 1600 switching and the electrode 1624 of the VSD material structure 1601 that level is switched.Connector 1628 can be passage, liner, trace, layering interconnection, or is designed to conduct electricity and promotes any other structure of the propagation of the signal of telecommunication.In one embodiment, connector 1628 is flexible electrical connectors.
The VSD material structure 1601 that the VSD material structure 1600 of the vertical switching of Figure 16 and level are switched can be integrated in any electronic equipment that comprises substrate equipment, so that the protection for ESD and other overvoltage event to be provided.In various embodiments, the example that the VSD material structure 1601 that the vertical VSD material structure 1600 switching and level are switched can be integrated in substrate equipment wherein comprises two PCB that interconnect by flexible connector, the PCB interconnecting by flexible connector and semiconductor packages, or the combination of two semiconductor packages that interconnect by flexible connector.Such flexible connector application can occur in flexible electronic devices, comprise and (for example there is rotatable or mobile surface, with mobile phone or the flat board of keyboard or adjustable screen) electronic equipment or to be designed to be flexible electronic devices (for example, flexible LED display).
Figure 16 shows each the section in the VSD material structure 1601 that the VSD material structure 1600 of vertical switching and level switch.Each in the VSD material structure 1601 that the vertical VSD material structure 1600 switching switches with level can be embedded in the substrate equipment separating such as PCB, flexible circuit or semiconductor packages.Figure 16 shows the extra illustrative substrate layer such as core 1682 and core 1683.
In one embodiment, each in the VSD material structure 1601 that the vertical VSD material structure 1600 switching and level are switched operates independently in response to the esd pulse such as esd pulse 1612.For the VSD material structure 1600 of vertical switching, if apply esd pulse 1612 and electrode 1622 ground connection (or otherwise being set to specific voltage electromotive force) in electrode 1620, if or applied esd pulse 1612 and electrode 1620 ground connection (or otherwise being set to specific voltage electromotive force) at electrode 1622, might this thing happens.The VSD material structure 1601 switching for level, if apply esd pulse 1612 and electrode 1626 ground connection (or otherwise being set to specific voltage electromotive force) in electrode 1624, if or applied esd pulse 1612 and electrode 1624 ground connection (or otherwise being set to specific voltage electromotive force) at electrode 1626, might this thing happens.
In embodiment illustrated in fig. 16, if two structures switch together, the VSD material structure 1601 that the vertical VSD material structure 1600 switching and level are switched can in response to the esd pulse cooperation such as esd pulse 1612 operate.If electrode 1626 ground connection (or otherwise being set to specific voltage electromotive force) also apply esd pulse 1612 to electrode 1620, if or electrode 1620 ground connection (or otherwise being set to specific voltage electromotive force), and apply esd pulse 1612 to electrode 1626, can realize this situation.In this case, VSD material structure 1646 can vertically switch across gap 1648, and VSD material structure 1640 can flatly switch across gap 1642.
For the VSD material structure 1601 that the vertical VSD material structure 1600 switching and level are switched is switched together between electrode 1620 and 1626, VSD material structure 1640 and 1648 both must energising.For this situation is occurred, the voltage difference producing between electrode 1620 and 1626 in response to esd pulse 1612 must equate or exceed the summation of the character voltage of VSD material structure 1640 and 1648.
When both energisings of VSD material structure 1640 and 1646 and two VSD material structures become while substantially conducting electricity, electric current will vertically be propagated across gap 1648, and flatly propagate across gap 1642.
In one embodiment, each in VSD material structure 1640 and 1646 has different compositions and character voltage (taking volt as unit).In one embodiment, two VSD material structures 1640 and 1646 have identical component.VSD material structure 1640 and 1646 can have or can not have same characteristic features voltage, depends on realization.
Realize for business, the thickness T 1 in gap 1648 and 1642 and the T2 scope of value separately, depends on the formula of VSD material structure 1646 and 1640, and depends on character voltage and other physics or operating characteristic that VSDM structure 1600 and 1601 is required.The particular exemplary value of T1 and T2 is 2 mils, 1.5 mils, 1 mil and 0.5 mil or less value.Generally speaking, expect the value of less T, so that the lower character voltage of VSD material structure 1646 and 1640 to be provided.
In various embodiments, can in the substrate of the structure switching about level, realize at the VSDM of vertical switching described in this patent and/or claimed structure, comprise as shown in figure 16.For example; the VSDM structure (such as structure illustrated in fig. 2) that the vertical VSDM structure (such as the shown structure of Figure 15 A) switching and level are switched both can be embedded in substrate; two VSDM structures (for example can use together; by electrode 122 is connected to electrode 1620) to protect specific electronic components; or can use independently (for example, directly not connecting two structures) to protect Single Electron assembly or different electronic building bricks.
The embodiment of Figure 16 further shows the circuit element that is expressed as embedded impedance 1696.In various embodiments, this circuit element can partially or even wholly be included in the VSDM structure 1600 vertically switching, or can (for example communicate with the VSDM structure 1600 vertically switching, it can be embedded in same PCB with the VSDM structure 1600 vertically switching, or also can surperficial be attached to VSDM structure 1600 PCB that are included in wherein that vertically switch).In that substitute or complementary embodiment, embedded impedance 1696 or another kind of like circuit element can partially or even wholly be included in flatly in the VSDM structure 1601 switching, or can (for example communicate with the VSDM structure 1601 flatly switching, it can be constructed 1601 with VSDM and be embedded in identical PCB, or can surperficial be attached to the PCB comprising VSDM structure 1601).
In the embodiment of Figure 16, embedded impedance 1696 is illustrated as being embedded at least in part the circuit element in VSDM structure 1600.Particularly, Figure 16 is shown embedded impedance 1696 to be embedded at least in part in VSD material structure 1646.In that substitute or complementary embodiment, embedded impedance 1696 can be arranged in substrate or VSDM constructs other positions in 1600.
In various embodiments, circuit element is embedded in the substrate such as the embedded impedance 1696 of Figure 16 at least in part, is made up of, or comprises one or more circuit elements one or more circuit elements.In various embodiments, embedded impedance 1696 can comprise one or more resistors, one or more inductors, one or more capacitors, one or more ferroic circuit elements (for example, can comprise or can not comprise the embedded ferroic circuit element of VSD material), one or more diodes, one or more transistors, one or more filters (for example, one or more low passes, band leads to the various combinations with high pass filter or filter stage), any other passive or active circuit element or electronic building brick, any layering interconnection, there is electrode or other conductive structures of the impedance of can not ignore, with aforementioned every any combination.
Embedded impedance 1696 can be used with VSD material structure 1640 together with 1646, so that the partially or completely esd protection for the electronic building brick such as electronic building brick 1698 illustrated in fig. 16 to be provided.In Figure 16, electronic building brick 1698 is illustrated as being connected to embedded impedance 1696 by electrode 1629.Embedded impedance 1696 also electrically contacts with electrode 1620.In the situation that there is no VSD material 1640, the esd pulse applying at electrode 1620 or other large voltage will cause the propagation to electronic building brick 1698 by embedded impedance 1696 of large voltage and/or electric current.But in the situation that there is VSD material 1648, as discussed above, VSDM structure 1600 energisings of vertically switching, then, interconnect 1670 by layering, make otherwise at least a portion that may arrive the esd pulse of electronic building brick 1698 turns to.The embedded impedance 1696 of structure 1600 use of therefore, vertically switching prevents that electronic building brick 1698 from avoiding in electrode 1620 esd pulse of damageability potentially or the damage of other overvoltage event of existence.
At U. S. application series No.13/096, at length disclose in 860 and can use to provide architecture and the operation for the circuit of the partially or completely esd protection of the electronic building brick such as electronic building brick 1698 illustrated in fig. 16 together with 1601 with the VSDM structure 1600 switching.
In one embodiment, electronic building brick 1698 can be embedded in VSDM structure 1600.In one embodiment, electronic building brick 1698 for example can be embedded in, in the same substrate (, same PCB) comprising VSDM structure 1600.In one embodiment, electronic building brick 1698 can be attached in the same substrate comprising VSDM structure 1600 on surface.In one embodiment, electronic building brick 1698 can be included in and (for example, VSDM structure 1600 can be included in the connector that is attached to the electronic equipment that comprises electronic building brick 1698) in the different electronic equipment electrically contacting comprising the substrate of VSDM structure 1600.In one embodiment, VSDM structure 1600 is included in the encapsulation of electronic building brick 1698, or otherwise is attached to or is included in the substrate with electronic building brick 1698 physical contacts or electrical communication.In one embodiment, electrode 1629 is flexible connectors, and electronic building brick 1698 is used as a part for flexible electronic devices, is arranged in different substrates.
In various embodiments, architecture, realization and the function of embedded impedance 1696 and electronic building brick 1698 can be substantially with the embodiment with reference to figure 12A for embedded impedance 1296 and described identical for electronic building brick 1298, be that embedded impedance 1696 and electronic building brick 1698 are arranged as discussed with respect to FIG. 16 like that.
In one embodiment, embedded impedance 1696 can realize with the ferroic circuit element that comprises the conductive structure being embedded at least in part in ferroic material.In various embodiments, embedded impedance 1696 can be implemented as embedded ferroic inductor, embedded ferroic VSD material inductor, embedded ferroic capacitor, embedded ferroic VSD material capacitor, or as any other embedded ferroic circuit element or embedded ferroic VSD material circuit element.
Figure 17 shows the two-way switching VSD material structure 1700 with VSD material is realized vertically and level is switched that is applicable to according to embodiment.
Be applicable to carry out VSD material structure vertical and that level is switched with VSD material and be expressed as " the VSDM structure of two-way switching " or " the VSDM structures of two switchings ".In various embodiments; the VSDM structure of the two-way switching such as the VSDM structure of the two-way switching of Figure 17 can be for the VSDM structure of various vertical switchings disclosed and/or claimed in this patent, and the VSDM structure that is such two-way switching can be carried out extra horizontal handoff functionality.
In various embodiments, the VSDM of two-way switching structure comprises the VSD material structure that promotes that the vertical mode of switching is arranged, as with together with the VSDM structure of various vertical switchings disclosed and/or claimed in this patent, discuss in general manner.In addition, in such embodiments, corresponding VSD material structure is also by electrically contacting with at least one electrode of arranging in the mode of promotion level switching, as discussed in general manner about Fig. 1 and/or 2.
The shown VSD material structure 1700 of embodiment of Figure 17 comprises the electrode 1720 (for example, liner or layering interconnection) for example, electrically contacting with VSD material structure 1740 (, VSD material layer).VSD material structure 1700 also comprises also the electrode 1726 and the electrode 1728 that electrically contact with VSD material structure 1740.In one embodiment, electrode 1726 can be directly and layering interconnection 1770 electrically contact (for example, electrode 1726 can pass VSD material layer 1740, or passage can be connected to electrode 1726 layering and interconnects 1770).In various embodiments, can omit any one in two electrodes 1726 and 1728, under these circumstances, the corresponding horizontal handoff functionality being provided by abridged electrode also will not exist.
In one embodiment, electrode 1726 electrically contacts (for example, they can be parts for identical conduction plane, maybe can directly connect by PCB trace or other connectors) with electrode 1728.
VSD material structure 1740 has down suction 1742, and it has vertical thickness T1 (for example,, taking mil as unit).Layering interconnection 1770 (for example, electrode or layering interconnection) electrically contacts with VSD material structure 1740 and electrode 1726.It is 1770 adjacent that sandwich layer 1782 and layering interconnect, and can be for example, one deck in the substrate (, PCB or semiconductor packages) comprising the structure 1700 of two-way switching.
Optional passage 1772 or any other conductive structure can through substrate one or more layers and set up and electrically contact with layering interconnection 1782.Such passage can produce by laser drill or by any other suitable manufacture process.
In one embodiment, electrode 1726, electrode 1728 and passage 1772 are all connected to ground wire.In alternative embodiment, layering interconnection 1770 is free of attachment to ground wire (for example, passage 1772 does not exist or be free of attachment to ground wire), and under these circumstances, the vertical switching between layering interconnection 1770 and electrode 1720 will can not occur.In alternative embodiment, electrode 1726 or electrode 1728 are free of attachment to ground wire, and under these circumstances, the horizontal cutting between the electrode that this does not connect and electrode 1720 is changed commanders and can not be occurred.
If electrode 1726, electrode 1728 and layering interconnection 1770 are all connected to ground wire or another reference voltage electromotive force, two VSDM structures 1700 that switch of the embodiment of Figure 17 can executive level and vertical switching.In this embodiment, there are three kinds of possible switching directions: the level in the gap 1744 (having horizontal breadth G1) between (1) spaning electrode 1726 and 1720 is switched; (2) level of the gap 1746 between spaning electrode 1728 and 1720 (having horizontal breadth G2) is switched, and the vertical switching in (3) spaning electrode 1720 and the gap 1742 (having vertical thickness T1) of layering interconnection 1770.Character voltage for the structure of VSD material 1740 is minimum gap across it, and the position that switch will be determined in this gap.If the formula of VSD material is across three gaps 1742,1744 and 1746, identical and character voltage is associated with the size in gap, switches the gap across minimum is occurred.
In one embodiment, gap 1744 is substantially the same with 1746, and across gap 1744 and 1746, both flatly switch VSDM structure 1700.In one embodiment, gap 1742,1744 is substantially the same with 1746, and VSDM structure 1700 vertically switches across gap 1742, flatly switches across gap 1744 and 1746.In one embodiment, gap 1742 is substantially the same with 1744, and VSDM structure 1700 vertically switches across gap 1742, flatly switches across gap 1744.In one embodiment, gap 1742 is substantially the same with 1746, and VSDM structure 1700 vertically switches across gap 1742, flatly switches across gap 1746.
In certain embodiments, for some formula of VSD material, for some physical features of level and/or down suction, can directly not be associated with the size in gap across the character voltage in such gap.Therefore, in such embodiments, the character voltage with two gaps of different thickness still can be substantially the same.In one embodiment, substantially the same with 1746 character voltage across gap 1744, across gap 1744 and 1746, both flatly switch VSDM structure 1700.In one embodiment, substantially the same with 1746 character voltage across gap 1742,1744, VSDM structure 1700 vertically switches across gap 1742, flatly switches across gap 1744 and 1746.In one embodiment, substantially the same with 1744 character voltage across gap 1742, VSDM structure 1700 vertically switches across gap 1742, flatly switches across gap 1744.In one embodiment, substantially the same with 1746 character voltage across gap 1742, VSDM structure 1700 vertically switches across gap 1742, flatly switches across gap 1746.
Such as the structure 400 of the embodiment of Fig. 4 A, the VSDM structure 490 of the embodiment of Fig. 4 B, the VSDM structure 500 of the embodiment of Fig. 5, the VSD material structure 600 of the embodiment of Fig. 6, the VSD material structure 900 of the embodiment of Fig. 9, the VSD material structure 1000 of the embodiment of Figure 10, the VSD material structure 1100 of the embodiment of Figure 11, the VSD material structure 1200 of the embodiment of Figure 12 A, the VSD material structure 1300 of the embodiment of Figure 13, the VSD material structure 1400 of the embodiment of Figure 14, the VSD material structure 1500 of the embodiment of Figure 15 A, the VSD material structure 1600 of the embodiment of Figure 16, and the VSDM of the vertical or two-way switching described in this patent and/or claimed of the two-way switching construction 1700 of the embodiment of Figure 17 and so on structure, can be for the esd protection of the circuit element in circuit and equipment and assembly.The example of the electronic building brick that can construct to protect by the VSDM of so vertical switching comprises one or more in the following: semiconductor chip or another integrated circuit (IC) are (for example; microprocessor, controller, memory chip, RF circuit, baseband processor etc.), light-emitting diode (LED), MEMS chip or structure, or be arranged in any other assembly or the circuit element of electronic equipment internal.
At U. S. application series No.13/096; in 860 and at the serial No.13/115 of application, disclose in 068 and can use as architecture and operation about the exemplary circuit of the VSDM structure of vertical switching described in the patent of esd protection and/or claimed at this.Although disclosed exemplary circuit can have the VSDM structure of the level switching of imagination in these applications; but; the structure that these levels are switched can replace with as the VSDM structure in the described and/or claimed vertical switching of this patent, and keeps their general esd protection function simultaneously.
As the VSDM structure of vertical switching described in this patent and/or claimed and two VSDM structure switching can be for the substrate equipment to such as group, the semiconductor packages of one deck PCB or multi-layer PCB; the vertical VSD material structure switching can be attached to or the vertical VSD material structure switching can be included any other substrate therein, carry out esd protection.
As the VSDM structure of vertical switching described in this patent and/or claimed and two VSDM structure switching can for comprising VSDM (for example construct; by being integrated in the substrate being included in such electronic equipment); or such VSDM structure (is for example connected to; when such VSDM structure is included in while being attached to the connector of such electronic equipment or cable, or be included in the equipment that is connected to such electronic equipment when such VSDM structure) electronic equipment.
Can construct to protect by the VSDM structure of so vertical switching or the VSDM of two switchings, maybe can comprise the substrate equipment that can construct to protect by the VSDM of so vertical or two switchings, the example of the electronic equipment of electronic building brick or circuit element comprises: mobile phone, panel computer, electronic reader, mobile computer (for example, laptop computer), desktop computer, server computer (for example, server, blade server, multiprocessor supercomputer), television set, video display, music player (for example, Portable MP 3 music player), personal health management equipment (for example, pulse monitoring device, oscilloscope for cardiac monitoring, distance detection device, temperature monitor, or any other sensor device of applying with health control), light-emitting diode (LED) and comprise the equipment of LED, light emitting module and with electric or dynamoelectric signal process or otherwise storage data any other consumption and/or commercial plant.Other examples comprise satellite, military equipment, instrument and sea equipment.
In various embodiments, as the VSDM structure of vertical switching described in this patent and/or claimed and two VSDM structure switching can be included in connector.Such connector can be attached to the electronic equipment that will be prevented from ESD or other overvoltage event.The example of such connector comprises power connector, USB connector, Ethernet cable connector, HDMI connector or promotes any other connector of data, signal or the electric power transfer of serial, parallel or other types.
This description details various embodiment and realization disclosed herein, the present invention is open to extra embodiment and realization, further amendment and alternative structure.In this patent, do not intend the present invention to be only limited to disclosed specific embodiment and realization; On the contrary,, this patent is intended to be encompassed in all modifications, equivalent and alternative embodiment and the realization within the scope of claims.
As used in this description, one group means one, any group of two or more projects.Similarly, subset means, with respect to one group of N project, comprises any group of such project of N-1 or corresponding project still less.
As used in this description, term " comprises ", " for example ", " exemplary " with and distortion saying, not being intended to is the term of restriction, and is intended to by word " but being not limited only to " or is followed with the similar word of implication.Definition in this specification, and all titles and subhead, it is descriptive being intended to, illustrative, object is to understand for promoting, still, is not intended to for restricting as scope of the present invention cited in claims.Each such definition is intended to also to catch those skilled in the art and will knows and corresponding project, technology or term equivalence or otherwise interchangeable extra equivalent project, technology or term thus defined.Unless context needs, verb " can " point out to realize the possibility of corresponding action, step or realization, and be not intended to determine such action, step or realize the requirement that must occur, or corresponding action, step or realize the requirement that must realize in described mode accurately.
Claims (20)
1. one kind is included in voltage switchable dielectric material (VSDM) structure of the vertical switching in substrate, and described VSDM structure comprises:
A. be arranged in the first conducting element in the first level course of described substrate and be arranged in the second conducting element in the second level course of described substrate, described the second level course is different from described the first level course;
B. have the VSDM structure of character voltage and vertical thickness, described VSDM structural configuration is in the 3rd level course of described substrate, and described the 3rd level course is different from described the first level course and described the second level course; And
C. be embedded at least in part the circuit element in described substrate, described circuit element has impedance; And
D. wherein, described VSDM structure is applicable to become across its vertical thickness conducts electricity substantially, and in response to the esd pulse that exceeds described character voltage, conduction current between described the first conducting element and described the second conducting element.
2. structure as claimed in claim 1, wherein, described the first conducting element is layering interconnection, Z axis conductive strips, silver slurry, copper slurry, is coated with silver-colored copper layer, carbon-coating, conductive epoxy resin, conducting polymer, electrode, liner, lead-in wire, trace, passage, circuit or signals layer.
3. structure as claimed in claim 1, wherein, described vertical thickness is less than 2 mils.
4. structure as claimed in claim 1, wherein, described substrate is the group of PCB, individual layer PCB or multi-layer PCB, in encapsulation in semiconductor packages, LED substrate, integrated circuit (IC) substrate, intermediary layer, the platform that connects two or more electronic building bricks, device or substrate, stacking encapsulation format, intermediary layer, wafer level encapsulation, encapsulation, system, encapsulate, or the stacking combination of at least two encapsulation or substrate.
5. structure as claimed in claim 1, also comprises electronic equipment.
6. structure as claimed in claim 5, wherein, described electronic equipment is mobile phone, panel computer, electronic reader, mobile computer, desktop computer, server computer, television set, video display, music player, personal health management equipment, light-emitting diode (LED), the equipment that comprises at least one LED or light emitting module.
7. structure as claimed in claim 1, wherein, described circuit element comprises at least one in the following: resistor, inductor, capacitor, ferroic circuit element, ferroic VSDM circuit element, diode, transistor, filter, or the resistive layering interconnection of tool.
8. comprise an electronic equipment for voltage switchable dielectric material (VSDM) structure of substrate and vertical switching, described VSDM structure is comprised in described substrate, and described substrate comprises three different level courses, and described VSDM structure comprises:
A. be arranged in the first conducting element in described the first level course and be arranged in the second conducting element in described the second level course;
B. have the VSDM structure of character voltage and vertical thickness, described VSDM structural configuration is in described the 3rd level course; And
C. be embedded at least in part the circuit element in described substrate, described circuit element has impedance; And
D. wherein; described VSDM structure is applicable to become across its vertical thickness conducts electricity substantially; and in response to the esd pulse that exceeds described character voltage, conduction current between described the first conducting element and described the second conducting element, described VSDM structure provides esd protection to described electronic equipment.
9. electronic equipment as claimed in claim 8, wherein, described electronic equipment is mobile phone, panel computer, electronic reader, mobile computer, desktop computer, server computer, television set, video display, music player, personal health management equipment, light-emitting diode (LED), the equipment that comprises at least one LED, light emitting module, satellite, or instrument.
10. electronic equipment as claimed in claim 8, wherein, described the first conducting element is layering interconnection, Z axis conductive strips, silver slurry, copper slurry, is coated with silver-colored copper layer, carbon-coating, conductive epoxy resin, conducting polymer, electrode, liner, lead-in wire, trace, passage, circuit or signals layer.
11. electronic equipments as claimed in claim 8, wherein, described vertical thickness is less than 2 mils.
12. electronic equipments as claimed in claim 8, wherein, described substrate is the group of PCB, individual layer PCB or multi-layer PCB, in encapsulation in semiconductor packages, LED substrate, integrated circuit (IC) substrate, intermediary layer, the platform that connects two or more electronic building bricks, device or substrate, stacking encapsulation format, intermediary layer, wafer level encapsulation, encapsulation, system, encapsulate, or the stacking combination of at least two encapsulation or substrate.
13. electronic equipments as claimed in claim 8, wherein, described circuit element comprises at least one in the following: resistor, inductor, capacitor, ferroic circuit element, ferroic VSDM circuit element, diode, transistor, filter, or the resistive layering interconnection of tool.
14. 1 kinds of vertical voltage switchable dielectric (VSD) material structures that switch, comprising:
A. the first conducting element and the second conducting element, described the first conducting element and described the second conducting element are arranged in the first level course;
B. be arranged in the layering interconnection in the second level course;
C. described the second conducting element is connected to the 3rd conducting element of described layering interconnection; And
D. be arranged in the structure of the VSD material in the 3rd level course, the structure of described VSD material has across the character voltage of the down suction forming between described the first conducting element and described layering interconnection;
E. wherein, the structure of described VSD material is applicable to vertically switch across described down suction in response to exceeding the esd pulse of described character voltage.
15. structures as claimed in claim 14, wherein, described the first conducting element is layering interconnection, Z axis conductive strips, silver slurry, copper slurry, is coated with silver-colored copper layer, carbon-coating, conductive epoxy resin, conducting polymer, electrode, liner, lead-in wire, trace, passage, circuit or signals layer.
16. structures as claimed in claim 14, wherein, described down suction is less than 2 mils.
17. structures as claimed in claim 14, wherein, described structure is comprised in substrate.
18. structures as claimed in claim 17, wherein, described substrate is the group of PCB, individual layer PCB or multi-layer PCB, in encapsulation in semiconductor packages, LED substrate, integrated circuit (IC) substrate, intermediary layer, the platform that connects two or more electronic building bricks, device or substrate, stacking encapsulation format, intermediary layer, wafer level encapsulation, encapsulation, system, encapsulate, or the stacking combination of at least two encapsulation or substrate.
19. structures as claimed in claim 14, wherein, described structure is included in electronic equipment.
20. structures as claimed in claim 19, wherein, described electronic equipment is mobile phone, panel computer, electronic reader, mobile computer, desktop computer, server computer, television set, video display, music player, personal health management equipment, light-emitting diode (LED), the equipment that comprises at least one LED or light emitting module.
Applications Claiming Priority (3)
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| US201161537490P | 2011-09-21 | 2011-09-21 | |
| US61/537,490 | 2011-09-21 | ||
| PCT/US2012/056663 WO2013044096A2 (en) | 2011-09-21 | 2012-09-21 | Vertical switching formations for esd protection |
Publications (2)
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| CN103999217A true CN103999217A (en) | 2014-08-20 |
| CN103999217B CN103999217B (en) | 2017-06-06 |
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| CN201280056095.8A Active CN103999217B (en) | 2011-09-21 | 2012-09-21 | For the construction of the Vertical Handover of ESD protections |
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| EP (1) | EP2758992A4 (en) |
| JP (3) | JP2014535157A (en) |
| KR (1) | KR101923760B1 (en) |
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| TW (1) | TWI473542B (en) |
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| Publication number | Publication date |
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| WO2013044096A2 (en) | 2013-03-28 |
| WO2013044096A3 (en) | 2013-07-04 |
| CN103999217B (en) | 2017-06-06 |
| JP2014535157A (en) | 2014-12-25 |
| JP2017152711A (en) | 2017-08-31 |
| KR101923760B1 (en) | 2018-11-29 |
| EP2758992A2 (en) | 2014-07-30 |
| JP2020080419A (en) | 2020-05-28 |
| EP2758992A4 (en) | 2015-08-12 |
| TWI473542B (en) | 2015-02-11 |
| KR20140110838A (en) | 2014-09-17 |
| JP6860718B2 (en) | 2021-04-21 |
| TW201330710A (en) | 2013-07-16 |
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