CN103961073A - Piezoresistive electronic skin and preparation method thereof - Google Patents
Piezoresistive electronic skin and preparation method thereof Download PDFInfo
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- CN103961073A CN103961073A CN201310396009.4A CN201310396009A CN103961073A CN 103961073 A CN103961073 A CN 103961073A CN 201310396009 A CN201310396009 A CN 201310396009A CN 103961073 A CN103961073 A CN 103961073A
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Abstract
The invention provides piezoresistive electronic skin and a preparation method thereof. A carbon nano tube thin film is adopted as an electroconductive layer, and a substrate is made by materials, with micro-nano patterns, like polydimethyl siloxane, polyphenyl dioctyl phthalate ethyl diester, polyvinyl alcohol, polyvinyl formal and polyethylene, so that the substrate is enabled to have the advantages of high flexibility, easiness in bending and the like, and the piezoresistive electronic skin is low in working voltage, small in power consumption, high in flexibility and short in response time. More importantly, the patterned flexible substrate is adopted as a base body, so that sensitivity, of the electronic skin, on outside small acting force is improved greatly.
Description
Technical field
The present invention relates to sensor field, relate in particular to a kind of pressure resistance type electronics skin and preparation method thereof.
Background technology
Robot, as artificial intelligence's automation devices, is more and more dissolved into the mankind's daily life, and is replacing the mankind and carrying out related work such as high temperature, high pressure, the dangerous industry such as explosive.Current robot system has been passed through the integrated of various kinds of sensors, has realized many visions such as the mankind, audition and olfactory function.But, how, as the mankind, have responsive feeling function, be also one of challenge of facing of robot system all the time.The birth of electronics skin will bring huge variation to robot system, make robot to obtain more information from external environment.
Although since two thousand four, the part Study group of Japan and the U.S. has been reported the electronics skin based on organic field effect tube type, condenser type and pressure resistance type, but cut both ways, for example, the use of complicated processing technique and device architecture, larger driving voltage, lower sensitivity, rigidity silica-base material makes device have the features such as nontransparent and inflexibility also to have limited the scope of application of device.
Therefore, necessary a kind of simple in structure, high sensitivity, pinpoint accuracy and the durable artificial electronics skin of providing.
Summary of the invention
The pressure resistance type electronics skin based on carbon nano-tube film that the object of this invention is to provide a kind of brand new, it has the advantages such as low cost, low driving voltage, high sensitivity, fast-response time, high stability.
In order to achieve the above object, the invention provides a kind of pressure resistance type electronics skin, it comprises:
Two flexible substrate;
Two conductive layers, are coated in respectively in two flexible substrate, and two conductive layers are in contact with one another;
Two conductive electrode, contact with two conductive layers respectively.
Preferably, described at least one flexible substrate adopts polydimethylsiloxane thin film.
Preferably, at least one mask of described polydimethylsiloxane thin film has pattern, and the size of described pattern is between 0.1-500 μ m.
Preferably, described conductive layer comprises carbon nano-tube film, and the network that described carbon nano-tube film is mainly interweaved by CNT forms.
Preferably, the light transmittance of described carbon nano-tube film is 50-97%, and sheet resistance is 100-10
7Ω/sq.
Preferably, the thickness of described carbon nano-tube film is generally in 10nm-500nm left and right, by one or more compound formed in SWCN, double-walled carbon nano-tube and multi-walled carbon nano-tubes, wherein, described SWCN is metallic single-wall carbon nano-tube or the mixing SWCN that simultaneously contains metallicity and semiconductive carbon nano tube.
Preferably, described conductive layer can be one or two or more kinds combination of any conducting metal in copper, silver and gold or semi-conducting material.
Preferably, described conductive electrode is to adopt any one material in gold, platinum, nickel, silver, indium, copper, CNT and Graphene or the combination of more than two kinds material to make.
In order to achieve the above object, the present invention also provides a kind of preparation method of pressure resistance type electronics skin, and step is as follows:
The flexible substrate of S1, preparation two patternings, wherein at least one deck is polydimethylsiloxane thin film;
S2, preparation carbon nano-tube solution, and be coated to respectively two flexible substrate band patterned surfaces, form carbon nano-tube film, by opposite, the side assembling with figuratum carbon nano-tube film, form the thin-film device that carbon nano-tube film is in contact with one another;
S3, use conductive material form respectively upper and lower conductive electrode on two carbon nano-tube films, and draw wire from conductive electrode, obtain pressure resistance type electronics skin.
Preferably, the polydimethylsiloxane thin film in described S1 is prepared by the following method:
S11, by the polydimethylsiloxane 1-30 minute that degass in a vacuum, and pour at one and establish in figuratum template, the thickness of polydimethylsiloxane, between 0.1-3mm, heats more than 0.5 hour curing molding afterwards at the temperature of 50-100 DEG C;
Polydimethylsiloxane after S12, curing molding took off from template after organic solvent for ultrasonic 5-30 minute.
Preferably, described template can be silicon substrate, the glass substrate with micro structure with micro structure, the metal substrate with micro structure, the plastic with micro structure, cloth, silk fabrics or the organism organ with micro structure; Described organic solvent can be methanol, ethanol or ethylene glycol.
Preferably, described step S2 specifically can comprise:
S21, the CNT of single wall and/or double-walled, Shao Bi, many walls is added to the aqueous solution containing the surfactant of 1wt%-10wt%, until CNT concentration is 0.01-50mg/ml, then,, by ultrasonic this mixed solution pre-dispersed 1min-10h, form carbon nano tube dispersion liquid;
More than S22, speed centrifugal treating 0.1h to this carbon nano tube dispersion liquid with 1000-20000rpm, get supernatant as film forming before solution;
S23, employing deionized water are by solution dilution 1-100 before film forming doubly, then, use airbrush to be sprayed into equably two flexible substrate band patterned surfaces the carbon nano-tube solution of dilution, form carbon nano-tube film, by opposite, the side assembling with figuratum carbon nano-tube film, form the thin-film device that carbon nano-tube film is in contact with one another.
Preferably, in described step S23 before being assembled into thin-film device, adopt deionized water repeatedly to soak described surface and have the thin film of carbon nano-tube film, in order to remove surfactant, dry after carbon nano-tube film 0.1-24h described in the strong acid treatment taking concentration as 3-8M again.
The invention also discloses that above-mentioned pressure resistance type electronics skin is beated at human pulse, application on motion and the blood pressure of heartbeat, breathing, eyeball pressure, throat's muscle group vibrations, kinetic body muscle and epidermis.
Compared with prior art, good effect of the present invention is: it is conductive layer and polydimethylsiloxane that this pressure resistance type electronics skin adopts carbon nano-tube film, gather the materials such as ethylene diester, polyvinyl alcohol, polyvinyl formal, polyethylene is flexible substrate, make substrate there is the advantages such as high flexibility is flexible, and its running voltage is low, power consumption is little, highly sensitive, response time is short.What is more important, adopts the flexible substrate of patterning as matrix in the present invention, increased the quantity of contact resistance, has improved greatly the sensitivity of micro force to external world of electronics skin.Meanwhile, the selected template of its patterning process is without the micro-course of processing of any complexity, the extremely easy to obtain and cheap soft template such as cloth or silk.
Brief description of the drawings
Fig. 1 is the structural representation of a preferred embodiment of the present invention;
Fig. 2 is the SEM picture with the polydimethylsiloxane thin film of micro-pattern;
Fig. 3 is the SEM picture of single wall carbon nano-tube film;
Fig. 4 is the pressure of the embodiment of the present invention and the schematic diagram of resistance variations;
Fig. 5 is the flow chart of preparation method of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing and specific embodiment, the present invention is described in further detail.
Please refer to Fig. 1, this embodiment has disclosed a kind of pressure resistance type electronics skin, and it comprises:
Two flexible substrate 11,12;
Two conductive layers 21,22, are coated in respectively in two flexible substrate 11,12, and two conductive layers 21,22 are in contact with one another;
Two conductive electrode 31,32, contact with two conductive layers 21,22 respectively.
Described at least one flexible substrate adopts polydimethylsiloxane thin film, and at least one mask of described polydimethylsiloxane thin film has micro-nano pattern, and the size of described pattern is between 0.1-500 μ m.
Described conductive layer 21,22 comprises carbon nano-tube film, and the network that described carbon nano-tube film is mainly interweaved by CNT forms.The light transmittance of described carbon nano-tube film is 50-97%, and sheet resistance is 100-10
7Ω/sq.The thickness of described carbon nano-tube film is generally in 10nm-500nm left and right, by one or more compound formed in SWCN, double-walled carbon nano-tube and multi-walled carbon nano-tubes, wherein, described SWCN is metallic single-wall carbon nano-tube or the mixing SWCN that simultaneously contains metallicity and semiconductive carbon nano tube.Described carbon nano-tube film can be also the carbon nano-tube film that mixes or modify through nitrogen or boron, noble metal, metal, surfactant and organic high molecular compound etc.Described CNT can adopt by hydroxyl (OH), carboxyl (COOH), amino (NH
2) CNT, the CNT of metal oxide functional and the CNT of biomolecule functionalization of the CNT of functionalization, the CNT of high molecular polymer functionalization, metal nanoparticle functionalization.Described conductive layer 21,22 can also be one or two or more kinds combination of any conducting metal in copper, silver and gold or semi-conducting material.
Specifically with reference to the embodiment of Fig. 1, conductive electrode 31 is to be connected and not connect with conductive layer 22 with conductive layer 21, conductive electrode 32 is to be connected and not connect with conductive layer 21 with conductive layer 22, and the carbon pipe thin film with micro-nano pattern can only be connected with one of them conductive electrode respectively.In addition, described conductive electrode the 31, the 32nd, any one material in employing gold, platinum, nickel, silver, indium, copper, CNT and Graphene or the combination of more than two kinds material are made.
Please refer to Fig. 5, the present invention also provides a kind of preparation method of pressure resistance type electronics skin, and step is as follows:
The flexible substrate of S1, preparation two patternings, wherein at least one deck is polydimethylsiloxane thin film;
In S1, described polydimethylsiloxane thin film is prepared by the following method:
S11, by the polydimethylsiloxane 1-30 minute that degass in a vacuum, and pour at one and establish in figuratum template, the thickness of polydimethylsiloxane, between 0.1-3mm, heats more than 0.5 hour curing molding afterwards at the temperature of 50-100 DEG C;
Polydimethylsiloxane after S12, curing molding took off from template after organic solvent for ultrasonic 5-30 minute.
Described template can be silicon substrate, metal substrate, cloth, the silk fabrics with micro structure or the organism organ with micro structure; Described organic solvent can be methanol, ethanol or ethylene glycol.The one side of the described polydimethylsiloxane thin film making or two sides are positioned under oxygen plasma condition, effect 1-60 minute.Described polydimethylsiloxane thin film can also be macromolecular material, can be selected from but be not limited to any one or the two kinds of above combinations in poly-ethylene diester, polyvinyl alcohol, polyvinyl formal and polyethylene.
Please refer to Fig. 2, is scanning electron microscope (SEM) photo of the prepared polydimethylsiloxane thin film with micro-nano pattern, illustrates and on polydimethylsiloxane thin film, has constructed the pattern with periodic micro structure.
S2, preparation carbon nano-tube solution, and be coated to respectively two flexible substrate band patterned surfaces, form carbon nano-tube film, by opposite, the side assembling with figuratum carbon nano-tube film, form the thin-film device that carbon nano-tube film is in contact with one another;
In S2, described step S2 specifically can comprise:
S21, the CNT of single wall and/or double-walled, Shao Bi, many walls is added to the aqueous solution containing the surfactant of 1wt%-10wt%, until CNT concentration is 0.01-50mg/ml, then,, by ultrasonic this mixed solution pre-dispersed 1min-10h, form carbon nano tube dispersion liquid; In present embodiment, described surfactant can adopt common ion-type or nonionic surfactant, preferably adopt ionic surfactant, the present invention especially preferably adopts but is not limited to dodecyl sodium sulfate and dodecylbenzene sodium sulfonate etc., and its concentration is preferably 1-10wt%.
More than S22, speed centrifugal treating 0.1h to this carbon nano tube dispersion liquid with 1000-20000rpm, get supernatant as film forming before solution;
S23, employing deionized water are by solution dilution 1-100 before film forming doubly, then, use airbrush to be sprayed into equably two flexible substrate band patterned surfaces the carbon nano-tube solution of dilution, form carbon nano-tube film, by opposite, the side assembling with figuratum carbon nano-tube film, form the thin-film device that carbon nano-tube film is in contact with one another.It should be noted that, the thickness of this carbon nano-tube film and conductivity can be decided by the time of the amount spraying of institute's carbon nanotubes.The higher spray time of consumption of CNT is longer, and its intensity is larger, and electric conductivity is better.In present embodiment, described film formation process can adopt the conventional thin film-forming methods such as vacuum filtration or spin coating, spraying, printing.For example, if adopt spraying thin film-forming method, its scheme is specially: the carbon nano tube dispersion liquid of getting after dilution is sprayed on the figuratum polydimethylsiloxane thin film of tool with the pressure airbrush of 0.1-1psi, then thin film is placed on heating furnace, be heated to 80-120 DEG C, accelerate moisture evaporation, then use the residual surfactant in washed with de-ionized water carbon nano-tube film, just can make the carbon nano-tube film being attached to figuratum polydimethylsiloxane thin film.If adopt the thin film-forming methods such as printing, coating, its scheme is specially: adopt the modes such as spin coating, spraying by the film forming on the material that has glass, Muscovitum, silicon chip etc. and have flat surface of the carbon nano tube dispersion liquid after diluting.Accordingly, the better method of removing this substrate is: adopt water or flood to carbon nano-tube film from substrate and come off containing the aqueous solution of acid, alkali, salt etc., then this carbon nano-tube film being transferred on the polydimethylsiloxane thin film of patterning.
In addition, in described step S23 before being assembled into thin-film device, adopt deionized water repeatedly to soak described surface and have the thin film of carbon nano-tube film, in order to remove surfactant, dry after carbon nano-tube film 0.1-24h described in the strong acid treatment taking concentration as 3-8M again.In present embodiment, strong acid can be in nitric acid, hydrochloric acid any one or mix.
Please refer to Fig. 3, for SWCN adhere to polydimethylsiloxane thin film on after SEM photo, instruction book wall carbon nano tube is interweaved, and well adheres to polydimethylsiloxane film surface.
S3, use conductive material form respectively upper and lower conductive electrode on two carbon nano-tube films, and draw wire from conductive electrode, obtain pressure resistance type electronics skin.
In S3, conductive material, as electrode, is generally silver slurry or elargol, can be also the gas electrode doing by methods such as steaming degree or ion sputterings, as gold, and silver, copper, aluminum etc.
Please refer to Fig. 4, under the running voltage of 1V, in air atmosphere, the resistance value of measuring this resistance sensor is 110-120k Ω, on the time point of 30 seconds, 60 seconds, 90 seconds, corresponding applying after the pressure of 60Pa, 120Pa, 180Pa respectively, resistance value fast-descending, for example, when applying after the pressure of 60Pa, resistance value fast-descending is to 95-105k Ω, and result shows that this resistance sensor has high sensitivity and very short response time.
Compared with prior art, good effect of the present invention is: it is conductive layer and polydimethylsiloxane that this pressure resistance type electronics skin adopts carbon nano-tube film, gather the materials such as ethylene diester, polyvinyl alcohol, polyvinyl formal, polyethylene is flexible substrate, make substrate there is the advantages such as high flexibility is flexible, and its running voltage is low, power consumption is little, highly sensitive, response time is short.What is more important, adopts the flexible substrate of patterning as matrix in the present invention, increased the quantity of contact resistance, has improved greatly the sensitivity of micro force to external world of electronics skin.Meanwhile, the selected template of its patterning process is without the micro-course of processing of any complexity, the extremely easy to obtain and cheap soft template such as cloth or silk.
Electronics skin of the present invention can be used for the detection to physiology signal, comprises that human pulse is beated, heartbeat, eyeball pressure, speak throat's muscle group vibrations of causing and the motion of other position muscle of kinetic health and epidermis.For instance, in the time of the detection for to human body wrist position beat pulse, can accurately differentiate P peak, T peak and D peak in pulse, and described human pulse is beated and is comprised due to tremulous pulse the beating of each position of human body of causing of beating.This electronics skin also can be used for the aspect such as blood pressure, breathing potential application
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change the protection domain that all should belong to the claims in the present invention with distortion.
Claims (14)
1. a pressure resistance type electronics skin, is characterized in that, comprising:
Multiple flexible substrate of stack;
The conductive layer arranging on adjacent flexible substrate contact surface, the contact surface of the conductive layer described at least one is nonplanar structure;
Be electrically connected at the conductive electrode of described conductive layer.
2. pressure resistance type electronics skin according to claim 1, is characterized in that: described at least one flexible substrate adopts polydimethylsiloxane thin film.
3. pressure resistance type electronics skin according to claim 2, is characterized in that: at least one mask of described polydimethylsiloxane thin film has pattern, the size of described pattern is between 0.1-500 μ m.
4. pressure resistance type electronics skin according to claim 1, is characterized in that: described conductive layer comprises carbon nano-tube film, and the network that described carbon nano-tube film is mainly interweaved by CNT forms.
5. pressure resistance type electronics skin according to claim 4, is characterized in that: the light transmittance of described carbon nano-tube film is 50-97%, sheet resistance is 100-10
7Ω/sq.
6. pressure resistance type electronics skin according to claim 4, it is characterized in that: the thickness of described carbon nano-tube film is generally between 10nm-500nm, by one or more compound formed in SWCN, double-walled carbon nano-tube and multi-walled carbon nano-tubes, wherein, described SWCN is metallic single-wall carbon nano-tube or the mixing SWCN that simultaneously contains metallicity and semiconductive carbon nano tube.
7. pressure resistance type electronics skin according to claim 1, is characterized in that: described conductive layer can be the combination of one or two or more kinds of any conducting metal in copper, silver and gold or semi-conducting material.
8. pressure resistance type electronics skin according to claim 1, is characterized in that: described conductive electrode is to adopt any one material in gold, platinum, nickel, silver, indium, copper, CNT and Graphene or the combination of more than two kinds material to make.
9. a preparation method for pressure resistance type electronics skin, is characterized in that, step is as follows:
The flexible substrate of S1, preparation two patternings, wherein at least one deck is polydimethylsiloxane thin film;
S2, preparation carbon nano-tube solution, and be coated to respectively two flexible substrate band patterned surfaces, form carbon nano-tube film, by opposite, the side assembling with figuratum carbon nano-tube film, form the thin-film device that carbon nano-tube film is in contact with one another;
S3, use conductive material form respectively upper and lower conductive electrode on two carbon nano-tube films, and draw wire from conductive electrode, obtain pressure resistance type electronics skin.
10. the preparation method of pressure resistance type electronics skin according to claim 9, is characterized in that: the polydimethylsiloxane thin film in described S1 is prepared by the following method:
S11, by the polydimethylsiloxane 1-30 minute that degass in a vacuum, and pour at one and establish in figuratum template, the thickness of polydimethylsiloxane, between 0.1-3mm, heats more than 0.5 hour curing molding afterwards at the temperature of 50-100 DEG C;
Polydimethylsiloxane after S12, curing molding took off from template after organic solvent for ultrasonic 5-30 minute.
The preparation method of 11. pressure resistance type electronics skins according to claim 10, is characterized in that: described template can be silicon substrate, the glass substrate with micro structure with micro structure, the metal substrate with micro structure, the plastic with micro structure, cloth, silk fabrics or the organism organ with micro structure; Described organic solvent can be methanol, ethanol or ethylene glycol.
The preparation method of 12. pressure resistance type electronics skins according to claim 9, is characterized in that: described step S2 specifically can comprise:
S21, the CNT of single wall and/or double-walled, Shao Bi, many walls is added to the aqueous solution containing the surfactant of 1wt%-10wt%, until CNT concentration is 0.01-50mg/ml, then,, by ultrasonic this mixed solution pre-dispersed 1min-10h, form carbon nano tube dispersion liquid;
More than S22, speed centrifugal treating 0.1h to this carbon nano tube dispersion liquid with 1000-20000rpm, get supernatant as film forming before solution;
S23, employing deionized water are by solution dilution 1-100 before film forming doubly, then, use airbrush to be sprayed into equably two flexible substrate band patterned surfaces the carbon nano-tube solution of dilution, form carbon nano-tube film, by opposite, the side assembling with figuratum carbon nano-tube film, form the thin-film device that carbon nano-tube film is in contact with one another.
The preparation method of 13. pressure resistance type electronics skins according to claim 12, it is characterized in that: in described step S23 before being assembled into thin-film device, adopt deionized water repeatedly to soak described surface and have the thin film of carbon nano-tube film, in order to remove surfactant, dry after carbon nano-tube film 0.1-24h described in the strong acid treatment taking concentration as 3-8M again.
The arbitrary described pressure resistance type electronics skin of 14. claim 1 to 8 is beated at human pulse, application on motion and the blood pressure of heartbeat, breathing, eyeball pressure, throat's muscle group vibrations, kinetic body muscle and epidermis.
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