CN110526198A - A kind of pliable pressure sensor and its manufacturing method based on hemispherical micro-structure - Google Patents
A kind of pliable pressure sensor and its manufacturing method based on hemispherical micro-structure Download PDFInfo
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- CN110526198A CN110526198A CN201810509553.8A CN201810509553A CN110526198A CN 110526198 A CN110526198 A CN 110526198A CN 201810509553 A CN201810509553 A CN 201810509553A CN 110526198 A CN110526198 A CN 110526198A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Abstract
The present invention is suitable for pliable pressure sensor technical field, discloses a kind of pliable pressure sensor and its manufacturing method based on hemispherical micro-structure.Pliable pressure sensor includes PDMS flexible base layer, carbon nano-tube film and PDMS thin flexible film layer, the PDMS flexible base layer has micro-structure, the spherical convex of micro-structure, the PDMS flexible base layer is covered with the carbon nano-tube film with the micro-structure on one side, and the carbon nano-tube film, between the PDMS flexible base layer and the PDMS thin flexible film layer, the carbon nano-tube film is connected with electrode.Manufacturing method is for manufacturing above-mentioned pliable pressure sensor.A kind of pliable pressure sensor and its manufacturing method based on hemispherical micro-structure provided by the present invention which raises the measurement range of pliable pressure sensor, sensitivity and reduces the response time.
Description
Technical field
The invention belongs to pliable pressure sensor technical field more particularly to a kind of flexible pressures based on hemispherical micro-structure
Force snesor and its manufacturing method.
Background technique
With the development of society, many aspects that flexible sensing device is social life bring revolutionary variation, because of it
Advantage in terms of flexibility is gradually applied to robot, wearable electronic, human-computer interaction, the fields such as smart skins.Phase
For traditional sensor, flexible sensor in aspect of performance there is also many defects, current flexible sensor is flexible
There is also sensitivity is not high, measurement range is small, and hysteresis is larger and the easy interference etc. by external environmental noise is asked
Topic.
Recent years, with economic quick hair, people's quality of the life is greatly improved, and promotes wearable flexible biography
Sensor quickly develops, and carries out directly with fitting comfortably in senser element, or with skin surface
It attaches, to obtain the health and fitness informations such as pulse and blood pressure.In addition, flexible sensor or the bionical artificial limb of the mankind and intelligence machine
The important composition component of people's sensing external environment.The research of pliable pressure sensor becomes the research hotspot come this year, forefathers
The performance indicator that pliable pressure sensor is improved using a variety of different means, such as sensitivity, range, repeatability and consistent
Property etc., expand the application field of pliable pressure sensor.
In recent years production pliable pressure sensor technique mainly include the following types:
1. making pyramid groove array mold by photoengraving and wet etching, PDMS is poured into mold, is produced
PDMS substrate with pyramid structure, then prepares graphene oxide suspension, is then existed using the method for LBL self-assembly
Graphene film is made on PDMS film with pyramid structure, will finally be applied with graphene PDMS film with ITO
In the PET film fitting of layer, the extraction electrode on film just completes the preparation of pliable pressure sensor.This pressure sensor is most
The small pressure that can measure 1.5Pa, response time only have 0.2 millisecond, the sensitivity in 0 to 100Pa pressure limit be-
5.53/kPa。
2. producing the rail wafer die with pyramidal recesses using photoetching technique.PDMS is mixed with the ratio of 5:1
And crosslinking agent, then diluted and stirred 30 minutes or more with hexane.100 microlitres of solution after dilution is coated on mold
And degasification is carried out, there is the PET film of ITO conductive layer with UV treatment 20 minutes a piece of 150 microns of thicker strip, then in vacuum
PET film is placed on PDMS film under environment, and at least pressure of 100MPa is applied to film in the environment of 70 degrees Celsius
It stacks 4 hours, finally connects conducting wire at film both ends and sensor is made.Since sensor has easily deformable micro-structure battle array
Column, it is achieved that highly sensitive measurement, sensitivity reaches 0.55/kPa in the range of 2kPa.
3. 10,30,50 milligrams of single-walled carbon nanotube (SWCNT) powder is made by mixing from the deionized water of 10mL different dense
The SWCNT solution of degree then mixes the ultrasonotomography of 0.1 milliliter of polystyrene (PSS) solution progress 30 minutes.PDMS is molten
Liquid, which is poured into, produces 500 microns of thick PDMS films in mold, handled to obtain parent using oxygen plasma to the surface PDMS
Water surface.The composite elastic body layer of the PU-PEDOT:PSS of 100 nanometer thickness is by polyurethane (60% weight) and PEDOT:PSS
The solution of (40% weight) is mixed and is deposited on substrate.With annealing one hour of 150 degrees Celsius, using three second
Oxosilane solution carries out self assembly (SAM) in 30 minutes to composite film surface, applies to obtain SWCNT solution on PDMS matrix
Layer.SAM processing after, by SWCNT solution drip on the surface of the substrate and with 1000rpm revolving speed spin coating 10 minutes, obtain with a thickness of
1.2 microns of film.Then it anneals in the environment of sample being placed in 100 degrees Celsius 1 hour.One layer of PU/ is finally coated again
PEDOT:PSS solution is simultaneously annealed one hour under 100 degrees Celsius, and the preparation of sensor is completed.The sensor has very high
Lightness can achieve 72% transparency, and have good repeatability, and sensitivity coefficient reaches 106.
4. the tetra chlorauric acid trihydrate of 44mg is added in the hexane of 40ml, it is subsequently added into the oleyl amine of 1.5ml, gold salt
After being completely dissolved, 2.1 milliliters of tri isopropyl silane joined in the above solution.Mixed solution is stood at room temperature
Two days, it is known that solution colour becomes peony from yellow, shows the formation of nanowires of gold.With ethyl alcohol and hexane (volume ratio 2:1)
Mixed solution be repeatedly centrifuged and cleaned to remove remaining compound, be finally concentrated in the chloroformic solution of 2ml.It will
Kimberley (Kimberly Clark) thin paper of 8x8mm2 is immersed in the chloroformic solution of nanowires of gold, thin after chloroform evaporated
The color of paper becomes peony from white.Smeared by about ten repetitions and dry, until thin paper resistance to 2.5M Ω/
Sq. staggered Ti/Au electrode is plated in the PDMS substrate of 30x27mm2.The spacing of adjacent electrode is usually 0.1 millimeter, intermediate
Electrode spacing is 0.5 millimeter.Two 10x10mm2 contact plates are placed on two interelectrode both ends and are connected with external circuit.Most
The film packet with AuNWs is clipped in the middle with the PDMS film of PDMS film and blank with staggered electrode afterwards, forms three
The same structure of civil administration.The sensor that this method obtains can measure the pressure of very little, and have the corresponding time of 17ms,
And the sensitivity of 1.14/kPa, the real-time measurement to mankind's pulse may be implemented.
Although the measurement to ambient pressure may be implemented in above-mentioned flexible sensor, but there is also some disadvantages.
1. sensitive based on the pliable pressure sensor of graphene micro structure array in too high or too low pressure limit
It spends lower.Cause application range smaller.
2. the remolding sensitivity of the flexible sensor based on micro-structure elastomeric dielectric layer is lower, it is only applicable to sensing static pressure
Power.
3. based on the flexible sensor of piezoresistive effect under biggish amount of tension, it may appear that response lag, it is difficult to restore former
Shape.
4. the pliable pressure sensor transparency based on nanowires of gold is lower, sensor its sensitivity under larger amount of tension
It is lower, in addition due to electrode fracture and fail.
Summary of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, provide a kind of based on the soft of hemispherical micro-structure
Property pressure sensor and its manufacturing method, which raises the measurement range of pliable pressure sensor, sensitivity and reduce response
Time.
The technical scheme is that a kind of pliable pressure sensor based on hemispherical micro-structure, including PDMS are flexible
Basal layer, carbon nano-tube film and PDMS thin flexible film layer, the PDMS flexible base layer have micro-structure, and the micro-structure is in
Spherical surface hill shape, the PDMS flexible base layer are covered with the carbon nano-tube film, and institute with the micro-structure on one side
Carbon nano-tube film is stated between the PDMS flexible base layer and the PDMS thin flexible film layer, the carbon nano-tube film
It is connected with electrode.
Optionally, the micro-structure is hemispherical.
The present invention also provides a kind of manufacturing methods of pliable pressure sensor, comprising the following steps:
Prepare the PDMS flexible base layer with the spherical convex of micro-structure;
Prepare carbon nano-tube film;
In the PDMS flexible base layer there is the surface of micro-structure to cover the carbon nano-tube film;
The PDMS thin flexible film layer is simultaneously covered in the carbon nano-tube film by preparation PDMS thin flexible film layer;
In the carbon nano-tube film connection electrode.
Optionally, wherein prepare the PDMS flexible base layer the following steps are included:
Silicon wafer sheet mold with hemispherical groove structure is produced using optical lithography;
It is mixed PDMS and crosslinking agent to obtain mixed solution with the weight ratio of 10:1, then applies the mixed solution
It is overlying on the silicon wafer sheet mold with hemispherical groove;
Heat the silicon wafer sheet mold and the mixed solution;
The cooling silicon wafer sheet mold and the mixed solution, it is flexible that the mixed solution cooling and solidifying forms PDMS later
PDMS flexible base layer is separated from the silicon wafer sheet mold, obtains the PDMS with hemispherical micro-structure by basal layer
Flexible base layer.
Optionally, wherein prepare the carbon nano-tube film the following steps are included:
Step 1: hydrogen chloride and hydrogenperoxide steam generator are mixed to get mixed liquor, mixed liquor is added in carbon nanotube powder
Middle heating;
Step 2: the carbon nanotube in step 1 is added in dimethyl formamide solution and vacuumizes leakage, is finally obtained
One layer of carbon nano-tube film being attached on leakage film.
Step 3: leakage film oblique cutting is entered in deionized water, one layer of carbon nano-tube film carbon obtained in the step 2 is received
It is separated on mitron film.
Step 4: the carbon nano-tube film swum in deionized water is taken out, and is air-dried with nitrogen stream.
Optionally, in the step 3, the carbon nano-tube film of one layer of 50-60nm thickness is from 200-300 microns of thick carbon
It is separated on nano-tube film.
Optionally, Yu Suoshu PDMS flexible base layer have the surface of micro-structure cover the carbon nano-tube film include with
Lower step:
Heating after carbon nano-tube film is transferred in the PDMS flexible base layer with hemispherical micro-structure.
Optionally, wherein preparation PDMS thin flexible film layer the following steps are included:
PDMS and crosslinking agent are mixed to obtain solution with the weight ratio of 10:1;
Heating, cools down later after solution is spin-coated on silicon wafer, by the PDMS thin flexible film layer of the semi-solid preparation on silicon wafer point
It separates out and.
Optionally, the PDMS thin flexible film layer of semi-solid preparation and carbon nano-tube film and the PDMS flexible base layer are glued
It closes, and heats.
Optionally, after bonding, in the two sides extraction electrode of the carbon nano-tube film of middle layer.
A kind of pliable pressure sensor and its manufacturing method based on hemispherical micro-structure provided by the present invention, it is flexible
Pressure sensor uses hemispheric internal structure, and the measurement range of sensor is greatly improved, high in conjunction with having
The carbon nanotube of conductivity, so that it is with higher sensitivity, and by improving production method, so that flexible sensor
Production more simple possible, reduces manufacture difficulty, reduces cost of labor, improve the efficiency of production, realize standardization
Manufacture craft.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is a kind of section signal of pliable pressure sensor based on hemispherical micro-structure provided in an embodiment of the present invention
Figure;
Fig. 2 is silicon wafer sheet mold employed in the manufacturing method of pliable pressure sensor provided in an embodiment of the present invention
Diagrammatic cross-section;
Fig. 3 is silicon wafer sheet mold employed in the manufacturing method of pliable pressure sensor provided in an embodiment of the present invention
Floor map;
Fig. 4 is the reference flow sheet of the manufacturing method of pliable pressure sensor provided in an embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
It should be noted that it can be directly another when element is referred to as " being fixed on " or " being set to " another element
On one element or it may be simultaneously present centering elements.When an element is known as " being connected to " another element, it can
To be directly to another element or may be simultaneously present centering elements.
It is only relative concept each other it should also be noted that, the positional terms such as left and right, upper and lower in the embodiment of the present invention
It or is to refer to, and should not be regarded as restrictive with the normal operating condition of product.
As shown in Figure 1, a kind of pliable pressure sensor based on hemispherical micro-structure provided in an embodiment of the present invention, including
PDMS flexible base layer 1, carbon nano-tube film 2 and PDMS thin flexible film layer 3, PDMS flexible base layer 1 and PDMS fexible film
Layer 3 is all made of PDMS and is made, and PDMS (polydimethyl siloxane) is the english abbreviation of dimethyl silicone polymer, transparent
Degree is high, with having good adhesiveness between silicon wafer, and has good chemical inertness, and translucency is good, bio-compatible
Property it is good, easily engage with various material room temperature and because low Young's modulus causes structure high resiliency.The PDMS flexible base layer
1 has micro-structure 11, and the spherical convex of the micro-structure 11, i.e. micro-structure 11 can be in spherical crown shape, it is preferable that micro-structure 11
It can be hemispherical.Micro-structure 11 is provided with multiple, and multiple micro-structures 11 are shaped in PDMS flexible base layer 1 in rectangular
One side.The PDMS flexible base layer 1 is covered with the carbon nano-tube film 2 with the micro-structure 11 on one side, and carbon is received
Mitron film 2 is uniform, fits in micro-structure 11 and PDMS flexible base layer 1.And the carbon nano-tube film 2 is positioned at described
Between PDMS flexible base layer 1 and the PDMS thin flexible film layer 3, the carbon nano-tube film 2 is connected with electrode.The flexibility passes
The working principle of sensor is piezoresistive effect, internal hemispheric micro- when external environment applies load to flexible sensor
Deformation occurs for structure 11, and the contact area between hemispheric micro-structure 11 and substrate is reduced, so that pliable pressure sensor
Resistance becomes smaller, so as to cause the increase of current strength.And after discharge, it is hemispheric due to the elastic characteristic of PDMS
Micro-structure 11 returns to original state, so pliable pressure sensor can realize the measurement of pressure by measuring electric current, and
The measurement range of pliable pressure sensor and sensitivity improve, and the response time shortens.
The embodiment of the invention also provides a kind of manufacturing methods of pliable pressure sensor, can be used for preparing above-mentioned one kind
Pliable pressure sensor based on hemispherical micro-structure, comprising the following steps:
Prepare the PDMS flexible base layer 1 with the spherical convex of micro-structure 11;
Prepare carbon nano-tube film 2;
In the PDMS flexible base layer 1 there is the surface of micro-structure 11 to cover the carbon nano-tube film 2;
The PDMS thin flexible film layer 3 is simultaneously covered in the carbon nano-tube film 2 by preparation PDMS thin flexible film layer 3;
In 2 connection electrode of carbon nano-tube film.
Specifically, wherein prepare the PDMS flexible base layer 1 the following steps are included:
As shown in Figures 2 and 3, the silicon wafer sheet mold 4 with hemispherical groove structure 41 is produced using optical lithography,
Hemispherical groove structure 41 can be used for forming hemispherical micro-structure 11;
It is mixed PDMS and crosslinking agent to obtain mixed solution with the weight ratio of 10:1, then applies the mixed solution
It is overlying on the silicon wafer sheet mold 4 with hemispherical groove 41;
Heat the silicon wafer sheet mold 4 and the mixed solution;
The cooling silicon wafer sheet mold 4 and the mixed solution, it is soft that the mixed solution cooling and solidifying forms PDMS later
Property basal layer 1, PDMS flexible base layer 1 is separated from the silicon wafer sheet mold 4, is obtained with hemispherical micro-structure 11
PDMS flexible base layer 1.
Specifically, wherein prepare the carbon nano-tube film 2 the following steps are included:
Step 1: hydrogen chloride and hydrogenperoxide steam generator are mixed to get mixed liquor, mixed liquor is added in carbon nanotube powder
Middle heating;
Step 2: the carbon nanotube in step 1 is added in dimethyl formamide solution and vacuumizes leakage, is finally obtained
One layer of carbon nano-tube film 2 being attached on leakage film.
Step 3: leakage film oblique cutting is entered in deionized water, one layer of carbon nano-tube film 2 carbon obtained in the step 2 is received
It is separated on mitron film 2.
Step 4: the carbon nano-tube film 2 swum in deionized water is taken out, and is air-dried with nitrogen stream.
Specifically, in the step 3, the carbon nano-tube film 2 of one layer of 50-60nm thickness is from 200-300 microns of thick carbon
It is separated on nano-tube film 2.
Specifically, there is the surface of micro-structure 11 to cover the carbon nano-tube film 2 and wrap for Yu Suoshu PDMS flexible base layer 1
Include following steps:
Heating after carbon nano-tube film 2 is transferred in the PDMS flexible base layer 1 with hemispherical micro-structure 11.
Specifically, wherein preparation PDMS thin flexible film layer 3 the following steps are included:
PDMS and crosslinking agent are mixed to obtain solution with the weight ratio of 10:1;
Heating, cools down later, the PDMS thin flexible film layer 3 of the semi-solid preparation on silicon wafer is divided after solution is spin-coated on silicon wafer
It separates out and.
Specifically, the PDMS thin flexible film layer 3 of semi-solid preparation and carbon nano-tube film 2 and the PDMS flexible base layer 1 are viscous
It closes, and heats.
Specifically, after bonding, in the 2 two sides extraction electrode of carbon nano-tube film of middle layer.
Concrete application can refer to following below scheme, as shown in Figure 1:
Step 1: produce the silicon wafer sheet mold 4 with hemispherical groove structure 41 using optical lithography, such as Fig. 2 and
Shown in Fig. 3.
Step 2: dimethyl silicone polymer (PDMS) and crosslinking agent are mixed ten minutes with the weight ratio of 10:1, connect
By solution be coated in hemispherical groove structure 41 silicon wafer sheet mold 4 on, heated 60 minutes under 85 degrees Celsius.
It is cooled down at room temperature step 3: solution temperature obtained above is placed in, by film from silicon wafer sheet mold 4 after solidification
In separate, obtain the PDMS film (PDMS flexible base layer 1) with hemispherical micro-structure 11.
Step 4: hydrogen chloride and hydrogenperoxide steam generator are mixed with the ratio of 3:1,5 grams of carbon nanotube powders are added mixed
It closes in solution, heats 4 hours at 60 c.
Leakage is vacuumized step 5: treated carbon nanotube is added in dimethyl formamide solution, finally obtains one
Layer is attached to the carbon nano-tube film on leakage film.
Step 6: leakage film is entered in deionized water with 45 degree of inclination angle oblique cuttings, the carbon nano-tube film of one layer of 50-60nm thickness
2 separate from 200-300 microns of thick carbon nano-tube films.
Step 7: the carbon nano-tube film 2 swum in deionized water is taken out, air-dried with nitrogen stream.
Step 8: transfer carbon nano-tube film 2 arrives PDMS film (the PDMS flexible base layer with hemispherical micro-structure 11
1) on, half an hour is heated under 200-220 degrees Celsius.
Step 9: dimethyl silicone polymer (PDMS) and crosslinking agent are mixed ten minutes with the weight ratio of 10:1, and
And be spin-coated on silicon wafer with 900-1100rpm revolving speed, it is heated half an hour under 85 degrees Celsius, solution temperature is placed in room later
The lower cooling of temperature, the PDMS film (PDMS thin flexible film layer 3) of the semi-solid preparation on silicon wafer is separated.
Step 10: the PDMS thin flexible film layer 3 of semi-solid preparation is bonded with carbon nano-tube film 2 and PDMS flexible base layer 1,
Degree Celsius under heat 30 minutes, closely bonded (such as Fig. 1).
Step 11: completing pliable pressure sensor system in the 2 two sides extraction electrode of carbon nano-tube film of middle layer
Make.
It is a kind of based on the pliable pressure sensor of hemispherical micro-structure 11 and its manufacturer provided by the embodiment of the present invention
Method, pliable pressure sensor use hemispheric internal structure, and the measurement range of sensor is greatly improved, and tie
The carbon nanotube with high conductivity is closed, so that it is with higher sensitivity, and by improving production method, so that flexible
The production of sensor more simple possible, reduces manufacture difficulty, reduces cost of labor, improves the efficiency of production, realizes
Standardization manufacture craft.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modification, equivalent replacement or improvement etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of pliable pressure sensor based on hemispherical micro-structure, which is characterized in that received including PDMS flexible base layer, carbon
Mitron film and PDMS thin flexible film layer, the PDMS flexible base layer have micro-structure, the spherical convex of micro-structure,
The PDMS flexible base layer is covered with the carbon nano-tube film with the micro-structure on one side, and the carbon nanotube is thin
For film between the PDMS flexible base layer and the PDMS thin flexible film layer, the carbon nano-tube film is connected with electrode.
2. a kind of pliable pressure sensor based on hemispherical micro-structure as described in claim 1, which is characterized in that described micro-
Structure is hemispherical.
3. a kind of manufacturing method of pliable pressure sensor, which comprises the following steps:
Prepare the PDMS flexible base layer with the spherical convex of micro-structure;
Prepare carbon nano-tube film;
In the PDMS flexible base layer there is the surface of micro-structure to cover the carbon nano-tube film;
The PDMS thin flexible film layer is simultaneously covered in the carbon nano-tube film by preparation PDMS thin flexible film layer;
In the carbon nano-tube film connection electrode.
4. a kind of manufacturing method of pliable pressure sensor as claimed in claim 3, which is characterized in that
Wherein, prepare the PDMS flexible base layer the following steps are included:
Silicon wafer sheet mold with hemispherical groove structure is produced using optical lithography;
It is mixed PDMS and crosslinking agent to obtain mixed solution with the weight ratio of 10:1, is then coated on the mixed solution
The silicon wafer sheet mold with hemispherical groove;
Heat the silicon wafer sheet mold and the mixed solution;
The cooling silicon wafer sheet mold and the mixed solution, the mixed solution cooling and solidifying form PDMS flexible substrates later
Layer, PDMS flexible base layer is separated from the silicon wafer sheet mold, obtains having the PDMS of hemispherical micro-structure flexible
Basal layer.
5. a kind of manufacturing method of pliable pressure sensor as described in claim 3 or 4, which is characterized in that
Wherein, prepare the carbon nano-tube film the following steps are included:
Step 1: hydrogen chloride and hydrogenperoxide steam generator are mixed to get mixed liquor, carbon nanotube powder is added in mixed liquor and is added
Heat;
Step 2: the carbon nanotube in step 1 is added in dimethyl formamide solution and vacuumizes leakage, finally obtains one layer
The carbon nano-tube film being attached on leakage film.
Step 3: leakage film oblique cutting is entered in deionized water, one layer of carbon nano-tube film carbon nanotube obtained in the step 2
It is separated on film.
Step 4: the carbon nano-tube film swum in deionized water is taken out, and is air-dried with nitrogen stream.
6. a kind of manufacturing method of pliable pressure sensor as claimed in claim 5, which is characterized in that in the step 3
In, the carbon nano-tube film of one layer of 50-60nm thickness is separated from 200-300 microns of thick carbon nano-tube films.
7. a kind of manufacturing method of pliable pressure sensor as claimed in claim 3, which is characterized in that Yu Suoshu PDMS is flexible
Basal layer there is the surface of micro-structure to cover the carbon nano-tube film the following steps are included:
Heating after carbon nano-tube film is transferred in the PDMS flexible base layer with hemispherical micro-structure.
8. a kind of manufacturing method of pliable pressure sensor as claimed in claim 3, which is characterized in that
Wherein, prepare PDMS thin flexible film layer the following steps are included:
PDMS and crosslinking agent are mixed to obtain solution with the weight ratio of 10:1;
Heating, cools down later, the PDMS thin flexible film layer of the semi-solid preparation on silicon wafer is isolated after solution is spin-coated on silicon wafer
Come.
9. a kind of manufacturing method of pliable pressure sensor as claimed in claim 8, which is characterized in that by the PDMS of semi-solid preparation
Thin flexible film layer and carbon nano-tube film and the PDMS flexible base layer bond, and heat.
10. a kind of manufacturing method of pliable pressure sensor as claimed in claim 9, which is characterized in that after bonding, in centre
The two sides extraction electrode of the carbon nano-tube film of layer.
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CN111122021A (en) * | 2019-12-30 | 2020-05-08 | 浙江清华柔性电子技术研究院 | Flexible composite film and preparation method thereof, flexible pressure sensor and preparation method thereof |
CN111122022A (en) * | 2019-12-30 | 2020-05-08 | 浙江清华柔性电子技术研究院 | Functional film and preparation method thereof, flexible pressure sensor and preparation method thereof |
CN111392690A (en) * | 2020-03-20 | 2020-07-10 | 北京航空航天大学杭州创新研究院 | Pressure sensing system based on thin film thermoelectric device power supply and preparation method thereof |
CN114279602A (en) * | 2021-12-27 | 2022-04-05 | 杭州电子科技大学 | Pressure sensor based on two-dimensional metal sulfide and piezoelectric film and preparation method thereof |
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