CN103956421A - 基于透明荧光陶瓷的led灯 - Google Patents

基于透明荧光陶瓷的led灯 Download PDF

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CN103956421A
CN103956421A CN201410161313.5A CN201410161313A CN103956421A CN 103956421 A CN103956421 A CN 103956421A CN 201410161313 A CN201410161313 A CN 201410161313A CN 103956421 A CN103956421 A CN 103956421A
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yag
led lamp
transparent fluorescent
led
ceramics
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周圣明
林辉
陈冲
易学专
丰岳
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Shanghai Institute of Optics and Fine Mechanics of CAS
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00Fastening of light sources or lamp holders
    • F21V19/001Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00Point-like light sources

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Luminescent Compositions (AREA)

Abstract

一种基于透明荧光陶瓷的LED灯,该LED灯由LED灯丝,电极引线和灯罩组成,其特征在于所述的LED灯丝由长条状的宽度与所用LED芯片相当的透明荧光陶瓷作为基板,然后将蓝光LED芯片(包括引线)顺次粘合固定于透明荧光陶瓷板条上,而另一侧粘合相同的透明荧光陶瓷条或涂覆荧光光胶构成。所述的透明荧光陶瓷可以是Ce:YAG(包括Ce离子浓度为零的情况)或Ce:Tb3Al5O12或Ce,Cr:YAG或Ce,Pr:YAG或“Ce:YAG+MgAl2O4”或“Ce,Pr:YAG+MgAl2O4”或“Ce,Cr:YAG+MgAl2O4”中的一种。本发明实施例的LED灯可有效解决荧光粉硅胶树脂混合物荧光体的光衰,提高LED灯丝灯的性能及寿命。

Description

基于透明荧光陶瓷的LED灯
技术领域
本发明涉及LED照明技术领域,尤其是一种基于透明荧光陶瓷的LED灯。
背景技术
传统LED封装结构由于其支架由Cu、Al等热沉材料构成,该结构LED只能单面出光,在采用透镜均衡发光分布的情况下,发光角一般也不超过165°,日本牛尾光源于2008年率先推出了由LED灯珠构成灯丝的仿传统白炽灯,引起了业界极大关注,并且实现了量产化。如对比文件1(发明专利申请号:201310239213.5)中公开了一种LED灯丝灯结构,其包括基板,固定于基板至少一侧面上的发光单元(蓝光和红光LED芯片),以及包覆于发光单元外层的封胶层。而此LED灯丝采用荧光粉+硅胶(或树脂)的传统封胶,散热较差,使得荧光粉转化型高功率白光LED存在以下两方面引起的光衰问题,即来自蓝光LED芯片在高注入电流下由缺陷、俄歇电子-空缺复合等效应所引起的发光衰减和来自荧光粉材料在高温下的热衰减,包括荧光粉本身的温度淬灭及有机硅胶树脂的老化等引起的光衰。因此,其难以实现稳定长效的高品质发光。此外,对比文件2(发明专利申请号:201220717834.0)提出采用玻璃做为灯丝芯柱,并安置至少一根与竖直方向倾斜一定角度的灯丝,以改善光强空间分布,但在荧光粉材料上仍无改进,因此仍存在荧光粉的热光衰问题。所以在完善LED灯丝使得灯球长效稳定发光等领域仍有大量问题需要解决。
本发明针对现有LED灯丝由于散热差导致的传统荧光粉+硅胶(树脂)封胶难以实现长效稳定高品质发光的问题,提出一种基于透明荧光陶瓷的LED灯丝结构,采用透明荧光陶瓷做为基板,不同于对比文件1,即基板位于LED芯片的外侧,在起到基板作用的同时起到荧光材料的作用,可以有效解决LED灯丝灯的荧光粉光衰问题。
发明内容
本发明的目的在于提供一种基于荧光陶瓷的LED灯,为了实现灯丝LED灯在改善或至少不降低散热效果的情况下,解决荧光材料发光的热衰减,改善高功率LED照明的长效稳定性。
本发明提出的技术方案为:
一种基于透明荧光陶瓷的LED灯,包括LED灯的灯丝,其特点在于所述的LED灯的灯丝是在条状透明荧光陶瓷的基板上依次粘合多个串连的蓝光LED芯片,在多个蓝光LED芯片上再粘合与其相同的透明陶瓷条或是涂覆荧光光胶构成。
所述的透明荧光陶瓷是掺铈石榴石单相结构,或掺铈石榴石和镁铝尖晶石混合相结构。
所述的透明荧光陶瓷的单相结构包括Ce:YAG、Ce:TAG、Ce,Cr:YAG或Ce,Pr:YAG。
所述的透明荧光陶瓷的混合相结构包括Ce:YAG+MgAl2O4、Ce,Pr:YAG+MgAl2O4、或Ce,Cr:YAG+MgAl2O4
本发明的技术效果:
本发明LED灯可以实现近全方位角的白光出光,相比玻璃和塑料基板,透明荧光陶瓷具有较高的热导率,在一定程度上可以改善散热。更重要的是,该荧光陶瓷在高功率LED的高温(150℃)工作场合仍可高效稳定发光,可有效解决目前荧光粉硅胶树脂混合物荧光体的热光衰,从而提高当前灯丝LED灯球的性能及寿命。
附图说明
图1为本发明基于荧光陶瓷的LED灯结构示意图。
图2为本发明灯丝的第一种实施例的结构示意图
图3为本发明灯丝的第二种实施例的结构示意图。
具体实施方式
下面结合附图和具体的实施例对本发明作进一步的详细说明
参见图1~图3,为本发明基于荧光陶瓷的LED灯,包括蓝光LED芯片1、上、下荧光陶瓷条2、引线3、上、下荧光硅胶4、灯罩5。
实施例1
上、下荧光陶瓷条2中采用:Ce:YAG荧光陶瓷加工成30mm×1.5mm×0.38mm的长条薄片两条,如图2所示,构成LED灯丝。由于Ce:YAG荧光陶瓷的热导率比玻璃,塑料等基板高很多,一定程度上可以改善LED灯丝灯的散热。而且,荧光陶瓷不存在传统荧光粉+硅胶(或树脂)封装的老化、变色等问题,更重要的是,Ce:YAG荧光陶瓷在适当掺杂浓度下也可以有效改善光衰问题,可以保证LED灯丝灯长效稳定工作性能和使用寿命。
实施例2
上、下荧光陶瓷条2中采用:Ce,Pr:YAG荧光陶瓷加工成30mm×1.5mm×0.38mm的长条薄片两条,如图2所示,构成LED灯丝。
实施例3
上、下荧光陶瓷条2中采用:Ce,Cr:YAG荧光陶瓷加工成40mm×2mm×0.38mm的长条薄片两条,如图2所示,构成LED灯丝。
实施例4
上、下荧光陶瓷条2中采用:Ce:YAG+MgAl2O4混合相荧光陶瓷加工成40mm×1.5mm×0.38mm的长条薄片两条,如图2所示,构成LED灯丝。
实施例5
上、下荧光陶瓷条2中采用:Ce,Pr:YAG+MgAl2O4混合相荧光陶瓷加工成30mm×1.5mm×0.38mm的长条薄片两条,如图2所示,构成LED灯丝。
实施例6
上、下荧光陶瓷条2中采用:Ce,Cr:YAG+MgAl2O4混合相荧光陶瓷加工成35mm×2.0mm×0.38mm的长条薄片两条,如图2所示,构成LED灯丝。
实施例7
上(下)荧光陶瓷条2中采用Ce:YAG荧光陶瓷加工成30mm×1.6mm×0.38mm的长条薄片,然后将若干蓝光LED芯片(包括引线)粘合固定于该透明荧光陶瓷板条上,再在蓝光LED芯片上涂覆荧光粉硅胶光胶,即下(上)荧光光胶4,如图2所示,构成LED灯丝。
实施例8
上(下)荧光陶瓷条2中采用Ce,Pr:YAG荧光陶瓷加工成35mm×1.5mm×0.4mm的长条薄片,然后将若干蓝光LED芯片(包括引线)粘合固定于该透明荧光陶瓷板条上,再在蓝光LED芯片上涂覆荧光粉硅胶光胶,即下(上)荧光光胶4,如图2所示,构成LED灯丝。
实施例9
上(下)荧光陶瓷条2中采用Ce,Cr:YAG荧光陶瓷加工成40mm×1.5mm×0.4mm的长条薄片,然后将若干蓝光LED芯片(包括引线)粘合固定于该透明荧光陶瓷板条上,再在蓝光LED芯片上涂覆荧光粉硅胶光胶,即下(上)荧光光胶4,如图2所示,构成LED灯丝。
实施例10
上(下)荧光陶瓷条2中采用Ce:YAG+MgAl2O4混合相荧光陶瓷加工成35mm×1.5mm×0.4mm的长条薄片,然后将若干蓝光LED芯片(包括引线)粘合固定于该透明荧光陶瓷板条上,再在蓝光LED芯片上涂覆荧光粉硅胶光胶,即下(上)荧光光胶4,如图2所示,构成LED灯丝。
实施例11
上(下)荧光陶瓷条2中采用Ce,Pr:YAG+MgAl2O4混合相荧光陶瓷加工成30mm×1.5mm×0.38mm的长条薄片,然后将若干蓝光LED芯片(包括引线)粘合固定于该透明荧光陶瓷板条上,再在蓝光LED芯片上涂覆荧光粉硅胶光胶,即下(上)荧光光胶4,如图2所示,构成LED灯丝。
实施例12
上(下)荧光陶瓷条2中采用Ce,Cr:YAG+MgAl2O4混合相荧光陶瓷加工成45mm×1.7mm×0.38mm的长条薄片,然后将若干蓝光LED芯片(包括引线)粘合固定于该透明荧光陶瓷板条上,再在蓝光LED芯片上涂覆荧光粉硅胶光胶,即下(上)荧光光胶4,如图2所示,构成LED灯丝。
实施例13
上、下荧光陶瓷条2中采用:YAG透明陶瓷加工成30mm×1.5mm×0.38mm的长条薄片,然后将若干蓝光LED芯片(包括引线)粘合固定于该YAG透明陶瓷细板条上,并将上述装好蓝光LED芯片的YAG透明陶瓷细条裹覆在Ce:YAG荧光粉硅胶光胶中,即荧光光胶4,如图3所示,构成LED灯丝。

Claims (4)

1.一种基于透明荧光陶瓷的LED灯,包括LED灯的灯丝,其特征在于所述的LED灯的灯丝是在条状透明荧光陶瓷的基板上依次粘合多个串连的蓝光LED芯片,在多个蓝光LED芯片上再粘合与其相同的透明陶瓷条或是涂覆荧光光胶构成。
2.如权利要求1所述的LED灯,其特征在于,所述的透明荧光陶瓷是掺铈石榴石单相结构,或掺铈石榴石和镁铝尖晶石混合相结构。
3.如权利要求2所述的LED灯,其特征在于,所述的透明荧光陶瓷的单相结构包括Ce:YAG、Ce:TAG、Ce,Cr:YAG或Ce,Pr:YAG。
4.如权利要求2所述的LED灯,其特征在于,所述的透明荧光陶瓷的混合相结构包括Ce:YAG+MgAl2O4、Ce,Pr:YAG+MgAl2O4、或Ce,Cr:YAG+MgAl2O4
CN201410161313.5A 2014-04-22 2014-04-22 基于透明荧光陶瓷的led灯 Pending CN103956421A (zh)

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