CN103943605B - Packaging structure and method based on ultra-thin glass - Google Patents
Packaging structure and method based on ultra-thin glass Download PDFInfo
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- CN103943605B CN103943605B CN201410126957.0A CN201410126957A CN103943605B CN 103943605 B CN103943605 B CN 103943605B CN 201410126957 A CN201410126957 A CN 201410126957A CN 103943605 B CN103943605 B CN 103943605B
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Abstract
The invention relates to a packaging structure and method based on ultra-thin glass. The packaging structure based on the ultra-thin glass comprises a glass substrate, wherein a holding area is arranged on the outer circle of the second surface of the glass substrate, the inner circle, corresponding to the holding area, of the second surface is thinned, so that an annular concave third surface is formed in the glass substrate, a plurality of packaging unit areas are arranged in the glass substrate, third surface chips are arranged on the packaging areas of the third surface, first surface chips are arranged in the packaging areas of the first surface, and the first surface chips are electrically connected with the third surface chips through conductive columns which are located in the packaging unit areas and penetrate through the glass substrate. The packaging structure based on the ultra-thin glass has the advantages that the structure is simple, the process is simple, the compatibility is high, safe holding of the ultra-thin glass substrate and connection between the first surface and the third surface are achieved by the adoption of the annular concave thinning method, and the problems that the safety coefficient of holding of the ultra-thin glass is low or the temporary bonding technology high in use cost is used, the manufacturing efficiency is low, and cost is high are solved.
Description
Technical field
The present invention relates to a kind of encapsulating structure and method, especially a kind of encapsulating structure based on ultra-thin glass and method,
Belong to the technical field of microelectronics Packaging.
Background technology
With development from the requirement to electronic product for the people to the directions such as miniaturization, multi-functional, environment-friendly type, people make great efforts seek
Ask and electronic system is done less and less, integrated level more and more higher, function does more and more, increasingly stronger, thereby produces many new skills
Art, new material and new design, wherein silicon hole TSV and glass through hole TGV technology are exactly the Typical Representative of these technology.
Three-dimensional packaging technology, refers on the premise of not changing package body sizes, in same encapsulation in vivo in Vertical Square
To the encapsulation technology stacking two or more chip, it originates from flash memory（NOR/NAND）And the encapsulation of SDRAM.And silicon is worn
Hole（Through Silicon Via, TSV）It is to realize one of key technology in three-dimension packaging.This is owing to TSV with respect to biography
The mutual contact mode of system, achievable total silicon encapsulation, mutually compatible with semiconductor CMOS process, and equal proportion can increase density of components,
Reduce interconnection delay problem, realize interconnecting at a high speed.
But because silicon hole cost of manufacture is higher, limit its development；Another aspect glass substrate TGV（Through
Glass Via）Because it is with low cost, sealing sex expression is superior, insulating properties more preferably, high-frequency loss is relatively low, high-modulus, transparent,
Showing the performances such as superior optical property becomes the silicon perforation that continues（Through Silicon Via, TSV）One kind of structure is preferably
Structure.
For the processing of thin glass substrate TGV structure, an always difficult problem for industrial circle.First：It is easy in technical process
Damaged, thus leading to yield relatively low；On the other hand, can effectively be subtracted using the special technology-interim bonding techniques that hold
Lack the damage of thin glass substrate, lifting ultra-thin glass holds safety coefficient.But using the interim bonding technology of high cost, make
Efficiency is low, is accepted so as to be difficult for industry the problems such as cost intensive.
In the file of Publication No. CN102147674A, describe a kind of preparation method of ultra-thin glass.Open file
Middle glass processing is become ultrathin lightweight product within the scope of 0.05 to 0.5mm for the thickness, and in order to solve due to super
Problem that the strong fragility of thin glass is brought, special work strengthening glass substrate.In addition, in 150 DEG C to 250 DEG C temperature
Achieve the deposition of transparency electrode by low temperature IPVD operation under environment.This invention can reduce being manufactured into of touch panel
Originally simultaneously, the safety also achieving substrate holds.But this patent has very strong restriction product scope, can only be used in flat board
The making of display screen.For other field, the method does not solve relevant issues substantially.
Therefore, in view of problem above is it is necessary to propose a kind of encapsulating structure based on ultra-thin glass and process Lai real
Existing high density surface interconnection, meets the requirement of ultra-thin glass three-dimension packaging, reduces cost of manufacture simultaneously.
Content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, provides a kind of encapsulating structure based on ultra-thin glass
And method, simply, processing step is simple for its structure, and compatibility is high, realizes ultra-thin glass base using the thinning method of annular female
The safety of piece holds the interconnection and between first surface and the 3rd surface, it is to avoid it is low or using high that ultra-thin glass holds safety coefficient
The interim bonding technology of cost, make efficiency is low and the problems such as cost intensive.
The technical scheme providing according to the present invention, the described encapsulating structure based on ultra-thin glass, including glass substrate, described
Glass substrate has first surface and the second surface corresponding with described first surface；Second surface in glass substrate
Outer ring setting holds area, and the inner ring that area is held to second surface correspondence carry out thinning, recessed to form annular in glass substrate
3rd surface of formula；Some encapsulation unit regions are set in glass substrate, and described encapsulation unit region is included positioned at the 3rd table
The packaging area in face and with the packaging area on the corresponding first surface of packaging area on described 3rd surface；On the 3rd surface
Packaging area on arrange the 3rd surface chip, on the packaging area of first surface arrange first surface chip, described first
Surface chip is by encapsulation unit region and the conductive pole of insertion glass substrate is electrically connected with the 3rd surface chip.
Thickness range between described first surface and the 3rd surface is 20 μm ~ 400 μm.
The second surface of glass substrate is subtracted using one of mechanical lapping, dry etching or wet etching mode
Thin.
A kind of method for packing based on ultra-thin glass, described method for packing comprises the steps：
A, offer glass substrate, described glass substrate has first surface and second table corresponding with described first surface
Face；Blind hole perpendicular to described first surface is made on the first surface of glass substrate；
B, in above-mentioned blind hole deposition of adhesion, and have filling in the blind hole of adhesion layer to obtain conducting filler in deposition；
C, the second surface to glass substrate carry out thinning, and wherein, described weakened region is correspondingly formed positioned at second surface
Hold the inner ring in area, and after being thinned to desired thickness, form the 3rd surface in glass substrate；
Glass base described in conducting filler insertion after d, formation the 3rd surface in above-mentioned glass substrate, in glass substrate
Plate, and form conductive pole in glass substrate.
In described step a, the method making blind hole in glass substrate includes machining, Laser Processing, sandblasting boring
Or etching.
The aperture of described blind hole is 1 μm ~ 500 μm.
The material of described adhesion layer is one or more of Cu, Ni, Ta, Ti, Pt, Pd, AlN or TiN.
In blind hole filling obtain conducting filler method include insert electric conductor, plating, chemical plating, physical deposition,
Chemical vapor deposition or liquid metal filling.
On the corresponding region in the 3rd surface of glass substrate and first surface, setting forms encapsulation unit region, and
On the packaging area on the 3rd surface, the 3rd surface wiring is set, setting first surface wiring on the packaging area of first surface,
The conductive pole that described first surface is routed through in encapsulation unit region is electrically connected with the 3rd surface wiring.
It is pasted with first surface chip, described first surface chip in the packaging area of the first surface of described glass substrate
It is arranged on one end of conductive pole, and electrically connected with conductive pole by first surface wiring；Envelope on the 3rd surface of glass substrate
Dress is pasted with the 3rd surface chip on region, and described 3rd surface chip is arranged on the other end of conductive pole, and the 3rd Surface Core
Piece passes through the 4th surface wiring and conductive pole is electrically connected with first surface chip.
Advantages of the present invention：Using annular female thinning method, ultra-thin glass base is realized to the second surface of glass substrate
The safety of piece holds, after to thinning glass substrate by the conductive pole of glass substrate described in insertion realize first surface chip and
The encapsulating structure of interconnection between the 3rd surface chipset, it is to avoid conventional method ultra-thin glass hold safety coefficient low or using high become
This temporary glass bonding technology, make efficiency is low and the problems such as cost intensive, structure is simple, and processing step is simple, compatible
Height, safe and reliable.
Brief description
Fig. 1 ~ Fig. 5 is the sectional view being embodied as processing step of the present invention, wherein
Fig. 1 is the structural representation of glass substrate of the present invention.
Fig. 2 obtain blind hole for the present invention in glass substrate after sectional view.
Fig. 3 is sectional view after first surface raw setting first surface chip for the present invention.
Fig. 4 obtains the sectional view behind the 3rd surface in glass substrate for the present invention.
Fig. 5 arranges the sectional view after the 3rd surface chip on the 3rd surface for the present invention.
Description of reference numerals：1- glass substrate, 2- blind hole, 3- first surface chip, 4- the 3rd surface chip, 5- first table
Face, 6- second surface, 7- the 3rd surface, 8- hold area, 9- conductive pole and 10- conducting filler.
Specific embodiment
With reference to concrete drawings and Examples, the invention will be further described.
As shown in Figure 5：Low or faced using high cost in order to be avoided that existing method holds safety coefficient to ultra-thin stripping
When bonding technology, the present invention includes glass substrate 1, described glass substrate 1 have first surface 5 and with described first surface 5
Corresponding second surface 6；Hold area 8 in the outer ring setting of the second surface 6 of glass substrate 1, and second surface 6 correspondence is taken
The inner ring holding area 8 carries out thinning, the 3rd surface 7 to form annular female in glass substrate 1；Arrange in glass substrate 1
Some encapsulation unit regions, described encapsulation unit region include packaging area positioned at the 3rd surface 7 and with described 3rd table
Packaging area on the corresponding first surface of packaging area 5 on face 7；3rd surface is arranged on the packaging area on the 3rd surface 7
Chip 4, arranges first surface chip 3 on the packaging area of first surface 5, and described first surface chip 3 passes through positioned at encapsulation
In unit area and the conductive pole 9 of insertion glass substrate 1 is electrically connected with the 3rd surface chip 4.
Specifically, the outer ring setting in the second surface 6 of glass substrate 1 holds area 8, enters to holding the corresponding inner ring in area 8
Row is thinning, obtain the 3rd surface 7 of annular female so that the thickness between the 3rd surface 7 and first surface 5 have very thin away from
From, meanwhile, second surface 6 outer ring to hold area 8 thickness constant, be capable of holding in process.The embodiment of the present invention
In, first surface chip 3 is mounted on one end end of conductive pole 9, and the 3rd surface chip 4 is mounted on the other end of conductive pole 9,
In each encapsulation unit region, at least one electric conductor 9 is set, thus enabling the structure of Ultrathin packaging.The embodiment of the present invention
In, show five encapsulation unit regions in Fig. 5, that is, one of figure conductive pole 9 represents in each encapsulation unit region
All conductive poles 9.
Specifically, the thickness range between described first surface 5 and the 3rd surface 7 is 20 μm ~ 400 μm.To glass substrate 1
Second surface 6 is carried out thinning using one of mechanical lapping, dry etching or wet etching mode.
As shown in Fig. 1 ~ Fig. 5, above-mentioned encapsulating structure, can be realized using following processing steps, described method for packing bag
Include following steps：
A, provide glass substrate 1, described glass substrate 1 has first surface 5 and corresponding with described first surface 5 the
Two surfaces 6；Blind hole 2 perpendicular to described first surface 5 is made on the first surface 5 of glass substrate 1；
As shown in figure 1, the method making blind hole 2 in glass substrate 1 includes machining, Laser Processing, sandblasting boring
Or etching.The aperture of described blind hole 2 is 1 μm ~ 500 μm.In the specific implementation, blind hole 2 can be manufactured by dry etch process,
Blind hole 2 extends downwardly from the first surface 5 of glass substrate 1, and the depth of blind hole 2 is less than the thickness of glass substrate 1.Above-mentioned in glass
The method manufacturing processing blind hole 2 in glass substrate 1 is the technological means that the art is commonly used, and specifically repeats no more.
B, in above-mentioned blind hole 2 deposition of adhesion, and have to fill in the blind hole 2 of adhesion layer in deposition and obtain conducting filler
10；
As shown in Fig. 2 the material of described adhesion layer is one or more of Cu, Ni, Ta, Ti, Pt, Pd, AlN or TiN.
In blind hole 2 filling obtain conducting filler 10 method include insert electric conductor, plating, chemical plating, physical deposition, chemistry gas
Mutually deposition or liquid metal filling.The electrically conductive metal of described conducting filler 10, metal mixture, CNT or polysilicon
One of material.In the embodiment of the present invention, the depth of conducting filler 10 filling is consistent with the depth of blind hole 2.
C, the second surface 6 to glass substrate 1 carry out thinning, wherein, described weakened region be located at second surface 6 correspond to shape
Become to hold the inner ring in area 8, and after being thinned to desired thickness, form the 3rd surface 7 in glass substrate 1；
As shown in figure 4, in mechanical lapping, dry etching or wet etching one is adopted to the second surface 6 of glass substrate 1
The mode of kind carries out thinning.Thickness range between described first surface 5 and the 3rd surface 7 is 20 μm ~ 400 μm；The embodiment of the present invention
In, glass substrate 1 be correspondingly formed hold area 8 width be 0.1mm ~ 10mm, be to hold on the corresponding first surface 5 in area 8 not
There is the structures such as first surface chip 3.By above-mentioned thinning after, on glass substrate 1 formed intermediate recess, outer ring protrude knot
Structure, the 3rd surface 7 of as annular female.
After d, formation the 3rd surface 7 in above-mentioned glass substrate 1, described in conducting filler 10 insertion in glass substrate 1
Glass substrate 1, and form conductive pole 9 in glass substrate 1.
As shown in Figure 3 and Figure 5, also include step e, corresponding on the 3rd surface 7 of glass substrate 1 and first surface 5
On region, setting forms encapsulation unit region, and arranges the 3rd surface wiring on the packaging area on the 3rd surface 7, in the first table
Setting first surface wiring on the packaging area in face 5, described first surface be routed through conductive pole 9 in encapsulation unit region with
3rd surface wiring electrical connection.In the embodiment of the present invention, the step of above-mentioned making first surface wiring can also be before thinning.
It is pasted with first surface chip 3, described first surface in the packaging area of the first surface 5 of described glass substrate 1
Chip 3 is arranged on one end of conductive pole 9, and is electrically connected with conductive pole 9 by first surface wiring；In glass substrate 1 the 3rd
3rd surface chip 4 is pasted with the packaging area on surface 7, described 3rd surface chip 4 is arranged on the other end of conductive pole 9,
And the 3rd surface chip 4 pass through the 4th surface wiring and conductive pole 9 is electrically connected with first surface chip 3.
In the embodiment of the present invention, by first surface chip 3 and second surface 4 can the convenient connection with outside, by the
One surface chip 3, conductive pole 9 and the 3rd surface chip 4 form the interconnection structure of TGV.
The present invention realizes ultrathin glass substrate to the second surface 6 of glass substrate 1 using the thinning method of annular female
Safety holds, and realizes first surface chip 3 He by the conductive pole 9 of glass substrate 1 described in insertion after thinning to glass substrate 1
The encapsulating structure of interconnection between the 3rd 4 groups of surface chip, it is to avoid it is low or using high that conventional method ultra-thin glass holds safety coefficient
The temporary glass bonding technology of cost, make efficiency is low and the problems such as cost intensive.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple modifications to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase one
The scope the widest causing.
Claims (1)
1. a kind of method for packing based on ultra-thin glass, is characterized in that, described method for packing comprises the steps：
（a）, provide glass substrate（1）, described glass substrate（1）There is first surface（5）And with described first surface（5）Right
The second surface answered（6）；In glass substrate（1）First surface（5）Upper making is perpendicular to described first surface（5）Blind hole
（2）；
（b）, in above-mentioned blind hole（2）Interior deposition of adhesion, and have the blind hole of adhesion layer in deposition（2）Interior filling obtains conductive fill
Body（10）；
（c）, to glass substrate（1）Second surface（6）Carry out thinning, wherein, described weakened region is located at second surface（6）Right
Should be formed and hold area（8）Inner ring, and after being thinned to desired thickness, in glass substrate（1）Interior formation the 3rd surface（7）；
（d）, in above-mentioned glass substrate（1）Interior formation the 3rd surface（7）Afterwards, glass substrate（1）Interior conducting filler（10）Pass through
Lead to described glass substrate（1）, and in glass substrate（1）Interior formation conductive pole（9）；
In glass substrate（1）The 3rd surface（7）And first surface（5）On corresponding region, setting forms encapsulation unit area
Domain, and on the 3rd surface（7）Packaging area on arrange the 3rd surface wiring, in first surface（5）Packaging area on arrange
First surface connects up, and described first surface is routed through the conductive pole in encapsulation unit region（9）It is electrically connected with the 3rd surface wiring
Connect；
In described glass substrate（1）First surface（5）Packaging area be pasted with first surface chip（3）, described first table
Face chip（3）It is arranged on conductive pole（9）One end, and connected up by first surface and conductive pole（9）Electrical connection；In glass substrate
（1）The 3rd surface（7）Packaging area on be pasted with the 3rd surface chip（4）, described 3rd surface chip（4）It is arranged on and lead
Electric post（9）The other end, and the 3rd surface chip（4）By the 4th surface wiring and conductive pole（9）With first surface chip（3）
Electrical connection；
Described first surface（5）With the 3rd surface（7）Between thickness range be 20 μm ~ 400 μm；
Described step（a）In, in glass substrate（1）Interior making blind hole（2）Method include machining, Laser Processing, sandblasting
Boring or etching；
Described blind hole（2）Aperture be 1 μm ~ 500 μm；The material of described adhesion layer is Cu, Ni, Ta, Ti, Pt, Pd, AlN or TiN
One or more of；
In blind hole（2）Interior filling obtains conducting filler（10）Method to include inserting electric conductor, plating, chemical plating, physics heavy
Amass, chemical vapor deposition or liquid metal are filled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410126957.0A CN103943605B (en) | 2014-03-31 | 2014-03-31 | Packaging structure and method based on ultra-thin glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410126957.0A CN103943605B (en) | 2014-03-31 | 2014-03-31 | Packaging structure and method based on ultra-thin glass |
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| Publication Number | Publication Date |
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| CN103943605A CN103943605A (en) | 2014-07-23 |
| CN103943605B true CN103943605B (en) | 2017-02-15 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104317074B (en) * | 2014-09-17 | 2017-07-18 | 京东方科技集团股份有限公司 | The stripping means of ultra-thin glass and the carrier substrate for carrying ultra-thin glass |
| CN104485288B (en) * | 2014-12-05 | 2017-05-24 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method of ultrathin glass adapter plate |
| CN106409758A (en) * | 2016-10-09 | 2017-02-15 | 华进半导体封装先导技术研发中心有限公司 | Through glass via metallic fabrication method |
| CN110828496B (en) * | 2019-11-15 | 2022-10-11 | 华天科技（昆山）电子有限公司 | Semiconductor device and method for manufacturing the same |
| CN112670300A (en) * | 2020-12-23 | 2021-04-16 | 武汉华星光电半导体显示技术有限公司 | Display module, preparation method and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332884A (en) * | 2010-07-08 | 2012-01-25 | 精工电子有限公司 | The manufacturing approach of glass substrate and the manufacturing approach of electronic unit |
| CN102915949A (en) * | 2011-08-01 | 2013-02-06 | 中国科学院微电子研究所 | Method for embedding metal material in substrate |
| CN103325799A (en) * | 2012-03-20 | 2013-09-25 | 南茂科技股份有限公司 | Chip stacking structure and manufacturing method thereof |
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2014
- 2014-03-31 CN CN201410126957.0A patent/CN103943605B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332884A (en) * | 2010-07-08 | 2012-01-25 | 精工电子有限公司 | The manufacturing approach of glass substrate and the manufacturing approach of electronic unit |
| CN102915949A (en) * | 2011-08-01 | 2013-02-06 | 中国科学院微电子研究所 | Method for embedding metal material in substrate |
| CN103325799A (en) * | 2012-03-20 | 2013-09-25 | 南茂科技股份有限公司 | Chip stacking structure and manufacturing method thereof |
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