CN109216509B - Preparation method of interdigital back contact heterojunction solar cell - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a back contact heterojunction solar cell. Depositing an intrinsic amorphous silicon front passivation layer, a front N-type amorphous silicon layer and an antireflection layer on the front surface of the monocrystalline silicon substrate subjected to cleaning, damage layer removal and texturing in sequence; depositing an intrinsic amorphous silicon back passivation layer on the back surface of the cell; depositing a P-type amorphous silicon layer on the surface of the back passivation layer by a mask method, then directly depositing an insulating isolation layer between the P-type amorphous silicon layer and the N-type amorphous silicon layer, and etching according to the preset width of the insulating isolation layer by adopting a photoetching method; further depositing a back N-type amorphous silicon layer by a mask method; and finally, depositing a transparent conductive film and a metal film in sequence by adopting a mask process to form a contact layer, thereby completing the preparation of the solar cell. The invention improves the preparation process precision of the back structure pattern of the HBC monocrystalline silicon solar cell, reduces the width of the isolation layer, and improves the collection probability of photon-generated carriers and the short-circuit current density of the HBC solar cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of an interdigital back contact heterojunction solar cell.
Background
The interdigital Back Contact Heterojunction monocrystalline Silicon Solar Cell (HBC Solar Cell for short) has the advantages of the interdigital Back Contact Solar Cell (IBC Solar Cell for short) and the Heterojunction Solar Cell (HIT Solar Cell for short) with a Thin Intrinsic layer, removes a front surface metal electrode, reduces shading loss and obtains larger short-circuit current, and greatly reduces an interface state, reduces surface recombination and improves open-circuit voltage by inserting a high-quality Intrinsic amorphous Silicon passivation layer between the heavily doped amorphous Silicon and the crystalline Silicon, thereby being the Solar Cell with highest photoelectric conversion efficiency in the world at present.
The common interdigital back contact heterojunction solar cell front surface profile structure sequentially comprises an N-type monocrystalline silicon substrate, a front surface intrinsic amorphous silicon passivation layer, a front surface N-type amorphous silicon layer and a reflection reducing layer from inside to outside, and the back surface sequentially comprises an N-type monocrystalline silicon substrate, a back surface intrinsic amorphous silicon passivation layer, back surface P-type amorphous silicon layers and N-type amorphous silicon layers which are arranged at intervals, an insulating isolation layer and a contact layer from inside to outside. The insulating isolation layer is positioned between the emitter and the base, and because no built-in electric field exists above the isolation layer, photogenerated carriers generated at the position can be collected by the emitter or the base only by means of diffusion. The larger the width of the isolation layer is, the longer the transport distance of a photon-generated carrier is, and the higher the carrier recombination probability is, resulting in a reduction in short-circuit current density.
Although the conversion efficiency of the HBC solar cell is high, the HBC solar cell is currently limited to laboratory research and has not been commercialized on a large scale. In the existing mainstream technology, most research institutions adopt a two-step photoetching process to realize a back structure pattern. Although the photoetching process is high in precision, the preparation cost of the cell is greatly increased due to the use of other chemical reagents in the process steps, and the process complexity is increased and the production efficiency is reduced due to the steps of gluing, prebaking, exposing, developing, etching, photoresist removing and the like, so that the large-scale popularization of the HBC solar cell is hindered. The mask method is another preparation process of a back structure pattern, and due to the limitation of the method, the precision of the method is far lower than that of a photoetching process, so that the width of an isolation layer is larger and is generally more than 50 micrometers. The large width of the isolation layer reduces the areas of the P-type amorphous silicon layer and the N-type amorphous silicon layer, and the carrier collection efficiency is reduced, so that the short-circuit current density of the battery is reduced.
Disclosure of Invention
The invention aims to provide a preparation method of an interdigital back contact heterojunction solar cell, which adopts a preparation process combining one-step photoetching and a mask method to form a back structure pattern of the HBC solar cell so as to make up for the defects of the photoetching method or the mask method, reduce the preparation cost of the cell, improve the process precision, reduce the width of an isolation layer, and improve the collection probability of photon-generated carriers and the short-circuit current density of the HBC solar cell.
In order to achieve the purpose, the invention adopts the following technical scheme:
a preparation method of a back contact heterojunction solar cell comprises the following steps:
(a) cleaning a monocrystalline silicon substrate, removing a damaged layer and making wool;
(b) preparing a front intrinsic amorphous silicon passivation layer on the treated monocrystalline silicon substrate by adopting PECVD;
(c) depositing a front N-type amorphous silicon layer by a PECVD method to be used as a front surface field of the solar cell;
(d) depositing an anti-reflection layer on the front N-type amorphous silicon layer by using a PECVD method;
(e) depositing a back intrinsic amorphous silicon passivation layer on the back of the monocrystalline silicon substrate by adopting a PECVD method so as to enable the passivation layer to cover the whole back area;
(f) with diborane or trimethylborane as doping gas, hydrogen as carrier gas and diluent gas, and silane as reaction gas, depositing a P-type amorphous silicon layer as an emitter by a mask process through a PECVD method;
(g) depositing an insulating isolation layer by a mask process through a PECVD method;
(h) etching according to the preset width of the isolation layer by using a photoetching technology to complete the preparation of the insulation isolation layer between the P-type amorphous silicon layer and the N-type amorphous silicon layer;
(i) on the basis of the back surface of the solar cell, taking phosphine as doping gas, hydrogen as carrier gas and diluent gas and silane as reaction gas, and depositing an N-type amorphous silicon layer as a back surface field by a mask process through a PECVD method;
(j) depositing transparent conductive oxide films on the surfaces of the P-type amorphous silicon layer and the N-type amorphous silicon layer by adopting a mask process through a PVD (physical vapor deposition) or CVD (chemical vapor deposition) method to serve as conductive layers;
(k) and depositing a metal electrode on the transparent conductive oxide film by adopting a mask process in a PVD (physical vapor deposition) mode to finish the preparation of the solar cell.
As a further scheme of the invention, the specific steps of the step (a) are as follows in sequence: RCA standard cleaning is carried out to remove particles, organic matters and the like on the surface of the silicon wafer; cleaning a silicon wafer, and then putting the cleaned silicon wafer into a 20% NaOH aqueous alkali to remove a surface damage layer caused in a slicing process; immersing in NaOH or Na2SiO3And making wool in the IPA mixed solution; using HCL to carry out acid washing on the surface of the silicon wafer after texturing so as to neutralize alkali liquor remained on the surface of the silicon wafer and remove metal impurities remained on the surface of the silicon wafer; and cleaning the silicon wafer by adopting an HF solution to remove the silicon dioxide layer on the surface of the silicon wafer and form a Si-H passivation bond with the dangling bond on the surface of the silicon wafer, and finally drying by using nitrogen for later use.
As a further scheme of the invention, a process combining a one-step photoetching method and a mask method is adopted to prepare the back structure pattern of the HBC battery.
As a further scheme of the invention, the insulating isolation layer material is composed of one or more of nitride, oxide and amorphous silicon, and the width of the insulating isolation layer is 10-50 μm.
As a further aspect of the present invention, the steps (b) to (j) performed by PECVD may be performed by hot-wire CVD.
As a further scheme of the invention, the sequence of the processes in the step (f) and the step (i) can be changed according to actual conditions; step (b), step (c), step (d) may be performed before or after step (e), step (f), step (g), step (h), step (i), step (j) or step (k).
As a further scheme of the invention, the pattern design of the mask plate required in the step (f) is based on the requirement of the required P-type amorphous silicon layer on the pattern, and the pattern design of the mask plate required in the step (i) is based on the requirement of the required N-type amorphous silicon layer on the pattern; the mask plate material is made of non-metal materials such as metal or quartz.
As a further scheme of the invention, the back transparent conductive oxide film has the thickness of 80-150nm, is formed by one or more laminated layers of ITO, AZO, IWO, FTO and GZO films, and the electrode material is aluminum, silver, copper or metal alloy.
As a further scheme of the invention, the thickness of the front intrinsic amorphous silicon passivation layer is 1-15nm, the thickness of the front surface field of the front N-type amorphous silicon layer is 1-15nm, the thickness of the back intrinsic amorphous silicon passivation layer is 1-15nm, the thickness of the back N-type amorphous silicon layer is 10-100nm, and the thickness of the back P-type amorphous silicon layer is 10-100 nm.
In a further embodiment of the present invention, the antireflective layer has a thickness of 50 to 200nm and is made of a silicon nitride film, a silicon oxide film, or a laminate of a silicon nitride film and a silicon oxide film.
The invention has the beneficial effects that: according to the invention, the back structure pattern of the back contact heterojunction solar cell is prepared by adopting a method of combining one-step photoetching and a mask, on one hand, the photoetching technology is adopted when the isolation layer is prepared, so that the process precision can be improved, the width of the isolation layer is reduced, and the collection rate of carriers is improved, thereby improving the short-circuit current density of the HBC solar cell and making up the disadvantage of the mask method in the aspect of insufficient precision; on the other hand, compared with a multi-step photoetching method, the mask method is used, so that the photoetching times can be reduced, the process complexity is reduced, the production efficiency can be improved, and the damage to the silicon wafer caused by the use of chemical reagents can be reduced. The preparation method provided by the invention is suitable for the requirement of large-scale mass production of HBC solar cells.
Drawings
FIG. 1 is a cross-sectional view of a typical interdigitated back contact heterojunction solar cell structure;
the semiconductor device comprises an N-type single crystal silicon substrate, a front intrinsic amorphous silicon passivation layer, a front N-type amorphous silicon layer, a antireflection layer, a back intrinsic amorphous silicon passivation layer, a back N-type amorphous silicon layer, a P-type amorphous silicon layer, a contact layer and an insulating isolation layer, wherein the N-type single crystal silicon substrate is 1, the front intrinsic amorphous silicon passivation layer is 2, the front N-type amorphous silicon layer is 3, the antireflection layer is 4, the back intrinsic amorphous silicon passivation layer is 5.
Fig. 2 is a flow chart of a method for manufacturing a back contact heterojunction solar cell in accordance with the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely explained below with reference to the drawings in the embodiments of the present invention.
As shown in FIG. 1, a back contact heterojunction solar cell, taking N-type silicon as an example of a substrate, comprises an N-type single crystal silicon substrate 1, a front intrinsic amorphous silicon passivation layer 2, a front N-type amorphous silicon layer 3, an anti-reflection layer 4, a back intrinsic amorphous silicon passivation layer 5, a back N-type amorphous silicon layer 6, a P-type amorphous silicon layer 7, a contact layer 8 and an insulating isolation layer 9.
The following describes an embodiment of the invention with reference to a schematic diagram of a method for manufacturing the backside of the interdigitated back contact heterojunction solar cell shown in fig. 2.
(a) Cleaning the monocrystalline silicon substrate 1, removing a damaged layer and making wool; the method comprises the following specific steps in sequence: RCA standard cleaning is carried out to remove particles, organic matters and the like on the surface of the silicon wafer; cleaning a silicon wafer, and then putting the cleaned silicon wafer into a 20% NaOH aqueous alkali to remove a surface damage layer caused in a slicing process; immersing in NaOH or Na2SiO3IPA mixed solutionTexturing in liquid; using HCL to carry out acid washing on the surface of the silicon wafer after texturing so as to neutralize alkali liquor remained on the surface of the silicon wafer and remove metal impurities remained on the surface of the silicon wafer; cleaning the silicon wafer by adopting an HF solution to remove a silicon dioxide layer on the surface of the silicon wafer and form a Si-H passivation bond with a dangling bond on the surface of the silicon wafer, and finally drying the silicon wafer by using nitrogen for later use;
(b) preparing a front intrinsic amorphous silicon passivation layer 2 on the processed monocrystalline silicon substrate 1 by adopting PECVD;
(c) depositing a front N-type amorphous silicon layer 3 by a PECVD method to be used as a front surface field of the solar cell;
(d) depositing an anti-reflection layer 4 on the front N-type amorphous silicon layer 3 by using a PECVD method;
(e) depositing a back intrinsic amorphous silicon passivation layer 5 on the back of the single crystal silicon substrate 1 by adopting a PECVD method so as to enable the back intrinsic amorphous silicon passivation layer to cover the whole back area;
(f) with diborane (B)2H6) Or Trimethylborane (TMB) as doping gas, hydrogen (H)2) As carrier and diluent gas, Silane (SiH)4) As reaction gas, depositing a P-type amorphous silicon layer 7 as an emitter by a mask process through a PECVD method;
(g) depositing an insulating isolation layer 9 by a mask process through a PECVD method;
(h) etching according to the preset width of the isolation layer by using a photoetching technology to finish the preparation of the insulation isolation layer 9 between the P-type amorphous silicon layer 7 and the N-type amorphous silicon layer 6;
(i) on the back surface of the solar cell, Phosphine (PH)3) As doping gas, hydrogen (H)2) As carrier and diluent gas, Silane (SiH)4) Depositing an N-type amorphous silicon layer 6 as a back surface field by a PECVD method by means of a mask process as a reaction gas;
(j) depositing transparent conductive oxide films on the surfaces of the P-type amorphous silicon layer 7 and the N-type amorphous silicon layer 6 by adopting a mask process through a PVD (physical vapor deposition) or CVD (chemical vapor deposition) method to serve as conductive layers;
(k) and depositing a metal electrode on the transparent conductive oxide film by adopting a mask process in a PVD (physical vapor deposition) mode to finish the preparation of the solar cell.
The front intrinsic amorphous silicon passivation layer 5 has a thickness of 1-15nm, preferably 2-4 nm. The thickness of the front surface field 3 of the front N-type amorphous silicon layer is 1-15 nm; the thickness of the anti-reflection layer 4 is 50-200nm, and the anti-reflection layer is made of a silicon nitride film, a silicon oxide film or a laminated layer consisting of the silicon nitride film and the silicon oxide film; the thickness of the back intrinsic amorphous silicon passivation layer 5 is 1-15nm, and the preferable thickness is 2-4 nm; the thickness of the back N-type amorphous silicon layer 6 is 10-100nm, and the preferable thickness is 20-50 nm; the thickness of the back P-type amorphous silicon layer 7 is 10-100nm, preferably 20-50 nm; the width of the back side insulating isolation layer 9 is 10-50 μm, preferably 5-15 μm, and the isolation layer material is composed of one or more of nitride, oxide and amorphous silicon; the back transparent conductive oxide film has a thickness of 80-150nm, and can be made of one or more of ITO, AZO, IWO, FTO and GZO films; the electrode material may be aluminum, silver, copper or a metal alloy.
The foregoing is a preferred embodiment of the present invention, and it will be apparent to those skilled in the art that variations, modifications, substitutions and alterations can be made in the embodiment without departing from the principles and spirit of the invention.
Claims (9)
1. The preparation method of the interdigital back contact heterojunction solar cell is characterized by comprising the following steps:
(a) cleaning a monocrystalline silicon substrate, removing a damaged layer and making wool;
(b) preparing a front intrinsic amorphous silicon passivation layer on the treated monocrystalline silicon substrate by adopting PECVD;
(c) depositing a front N-type amorphous silicon layer by a PECVD method to be used as a front surface field of the solar cell;
(d) depositing an anti-reflection layer on the front N-type amorphous silicon layer by using a PECVD method;
(e) depositing a back intrinsic amorphous silicon passivation layer on the back of the monocrystalline silicon substrate by adopting a PECVD method so as to enable the passivation layer to cover the whole back area;
(f) with diborane or trimethylborane as doping gas, hydrogen as carrier gas and diluent gas, and silane as reaction gas, depositing a P-type amorphous silicon layer as an emitter by a mask process through a PECVD method;
(g) depositing an insulating isolation layer by a mask process through a PECVD method;
(h) etching according to the preset width of the isolation layer by using a photoetching technology to complete the preparation of the insulation isolation layer between the P-type amorphous silicon layer and the N-type amorphous silicon layer;
(i) on the basis of the back surface of the solar cell, taking phosphine as doping gas, hydrogen as carrier gas and diluent gas and silane as reaction gas, and depositing an N-type amorphous silicon layer as a back surface field by a mask process through a PECVD method;
(j) depositing transparent conductive oxide films on the surfaces of the P-type amorphous silicon layer and the N-type amorphous silicon layer by adopting a mask process through a PVD (physical vapor deposition) or CVD (chemical vapor deposition) method to serve as conductive layers;
(k) depositing a metal electrode on the transparent conductive oxide film by adopting a mask process in a PVD (physical vapor deposition) manner to complete the preparation of the solar cell;
and preparing the back structure pattern of the HBC battery by adopting a process combining a one-step photoetching method and a mask method.
2. The method for preparing an interdigital back contact heterojunction solar cell according to claim 1, wherein the specific steps of the step (a) are as follows: RCA standard cleaning is carried out to remove particles and organic matters on the surface of the silicon wafer; cleaning a silicon wafer, and then putting the cleaned silicon wafer into a 20% NaOH aqueous alkali to remove a surface damage layer caused in a slicing process; soaking the fabric into a mixed solution of NaOH, Na2SiO3 and IPA for making wool; using HCL to carry out acid washing on the surface of the silicon wafer after texturing so as to neutralize alkali liquor remained on the surface of the silicon wafer and remove residual metal impurities on the surface of the silicon wafer; and cleaning the silicon wafer by adopting an HF solution to remove the silicon dioxide layer on the surface of the silicon wafer and form a Si-H passivation bond with the dangling bond on the surface of the silicon wafer, and finally drying by using nitrogen for later use.
3. The method for preparing an interdigital back contact heterojunction solar cell according to claim 1, wherein the insulating isolation layer material is composed of one or more of nitride, oxide and amorphous silicon, and the width of the insulating isolation layer is 10-50 μm.
4. The method for preparing an interdigital back contact heterojunction solar cell according to claim 1, wherein the steps (b) to (j) implemented by PECVD are implemented by hot-wire CVD.
5. The method for preparing an interdigital back contact heterojunction solar cell according to claim 1, wherein: the sequence of the processes of the step (f) and the step (i) can be changed according to the actual situation; step (b), step (c), step (d) may be performed before or after step (e), step (f), step (g), step (h), step (i), step (j) or step (k).
6. The method for preparing an interdigital back contact heterojunction solar cell according to claim 1, wherein the pattern design of the mask plate required in step (f) is based on the requirement of a required P-type amorphous silicon layer on the pattern, and the pattern design of the mask plate required in step (i) is based on the requirement of a required N-type amorphous silicon layer on the pattern; the material of the mask plate is metal or quartz.
7. The method according to claim 1, wherein the back transparent conductive oxide film has a thickness of 80-150nm and is made of one or more of ITO, AZO, IWO, FTO and GZO films, and the metal electrode material is aluminum, silver, copper or metal alloy.
8. The method for preparing an interdigital back-contact heterojunction solar cell according to claim 1, wherein the thickness of the front intrinsic amorphous silicon passivation layer is 1-15nm, the thickness of the front surface field of the front N-type amorphous silicon layer is 1-15nm, the thickness of the back intrinsic amorphous silicon passivation layer is 1-15nm, the thickness of the back N-type amorphous silicon layer is 10-100nm, and the thickness of the back P-type amorphous silicon layer is 10-100 nm.
9. The method according to claim 1, wherein the antireflective layer is 50-200nm thick and is made of a silicon nitride film, a silicon oxide film or a stack of a silicon nitride film and a silicon oxide film.
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| CN110277463B (en) * | 2019-07-10 | 2024-03-15 | 通威太阳能（成都）有限公司 | Solar cell structure manufacturing method |
| CN112420880A (en) * | 2020-10-14 | 2021-02-26 | 浙江爱旭太阳能科技有限公司 | Preparation method of N-type monocrystalline silicon HBC solar cell |
| CN112420879A (en) * | 2020-10-14 | 2021-02-26 | 浙江爱旭太阳能科技有限公司 | HBC solar cell and preparation method thereof |
| CN112490324A (en) * | 2020-11-03 | 2021-03-12 | 浙江爱旭太阳能科技有限公司 | Preparation method of N-type monocrystalline silicon HBC solar cell |
| CN112510105A (en) * | 2020-11-10 | 2021-03-16 | 浙江爱旭太阳能科技有限公司 | High-efficiency solar cell and preparation method thereof |
| CN113707737A (en) * | 2021-07-22 | 2021-11-26 | 深圳市科纳能薄膜科技有限公司 | Solar cell and manufacturing method thereof |
| CN113964229A (en) * | 2021-10-09 | 2022-01-21 | 国家电投集团科学技术研究院有限公司 | Back contact heterojunction cell and preparation method thereof |
| CN116487450A (en) * | 2022-01-17 | 2023-07-25 | 西安隆基乐叶光伏科技有限公司 | Back contact solar cell, production method and cell assembly |
| CN114725248A (en) * | 2022-03-16 | 2022-07-08 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Manufacturing method of passivated back contact solar cell |
| CN114664954A (en) * | 2022-03-16 | 2022-06-24 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Manufacturing method of passivated back contact solar cell |
| CN115000194A (en) * | 2022-05-26 | 2022-09-02 | 普乐新能源科技(徐州)有限公司 | Simple low-cost P-type crystalline silicon IBC solar cell and preparation method thereof |
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| CN115000226B (en) * | 2022-07-29 | 2022-10-11 | 中国华能集团清洁能源技术研究院有限公司 | Back contact heterojunction battery piece and manufacturing method thereof |
| CN115425097A (en) * | 2022-11-02 | 2022-12-02 | 深圳市拉普拉斯能源技术有限公司 | Method for preparing HBC solar cell and HBC solar cell |
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