CN103911601A - Spraying plate and plasma box containing spraying plates - Google Patents
Spraying plate and plasma box containing spraying plates Download PDFInfo
- Publication number
- CN103911601A CN103911601A CN201310003503.XA CN201310003503A CN103911601A CN 103911601 A CN103911601 A CN 103911601A CN 201310003503 A CN201310003503 A CN 201310003503A CN 103911601 A CN103911601 A CN 103911601A
- Authority
- CN
- China
- Prior art keywords
- plate
- hole
- aperture
- electrode
- shower plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The present invention discloses a spraying plate and a plasma box containing the spraying plates. According to the spraying plate, the spraying plate body is a stainless steel plate, the lower plate surface of the stainless steel plate is provided with concave grooves, the concave grooves comprise alternately arranged exciting electrode concave grooves and grounding electrode concave grooves, and the stainless steel plate is provided with through holes positioned on both sides of the concave grooves and penetrating the upper plate surface and the lower plate surface of the stainless steel plate. The plasma box comprises the spraying plates, a cover plate, N exciting electrodes and N+1 grounding electrodes, wherein the N exciting electrodes and the N+1 grounding electrodes are alternately arranged, N is an integer, the two grounding electrodes on the outermost sides are adopted as the side plates of the plasma box, discharge regions are formed between the adjacent electrodes, the top portion and the bottom portion of the exciting electrodes and the grounding electrodes are respectively provided with the one public spraying plate, the top end of the spraying plate positioned on the top portion is provided with the hollow cover plate having the opening on the bottom, the top end and the cover plate form a semi-closed cavity, and the cover plate is provided with a gas inlet. With the spraying plate, the uniformity of work gas pressure distribution in the large area plasma box discharge region can be improved so as to improve the thickness uniformity of the deposited film.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of shower plate and the plasma case that comprises this shower plate.
Background technology
Plasma case device is generally used for deposition or stripping film or object is carried out to surface treatment, thin film deposition aspect is such as depositing silicon base semiconductor film on substrate, form these films, the working gas of different components must be introduced to the region of discharge in plasma case, then by radio-frequency (RF) energy, these working gass are excited into plasma body, on substrate, deposit the film of expection through series of chemical.
Plasma case structure as shown in Figure 1, N exciting electrode 1-4 and N+1 ground-electrode 1-5 are alternately installed in plasma case, wherein outermost two ground-electrodes are as the side plate 1-12 of plasma case, each exciting electrode all, independently by a radio-frequency power supply energy supply, forms region of discharge 1-3 between each adjacent electrode.A upper shower plate 1-1 is equipped with at the top of electrode, for stainless steel plate, there is outside surface and internal surface, comprise the through hole 1-6 of several connection outside surfaces to internal surface, a cover plate 1-7 is equipped with at the top of upper shower plate 1-1, and upper shower plate 1-1 and cover plate 1-7 form semi-enclosed cavity 1-2 and be connected by corrugated tube 1-9 with external feed stream system by the upper inlet mouth 1-8 arranging of cover plate 1-7.The bottom of electrode is that a public lower shower plate 1-10 with through hole 1-6 is equipped with in the bottom of plasma case, working gas enters the cavity 1-2 of shower plate 1-1 and cover plate 1-7 formation through inlet system and corrugated tube 1-9 from storage vessel, flow down from each exhausting hole 1-6 on upper shower plate, enter each region of discharge 1-3 that parallel pole is formed and flow downward along region of discharge 1-3, reacted gas is through all multi-through hole 1-6 on lower shower plate 1-10, flow to outside movable plasma case, discharged by air-bleed system.Between exciting electrode 1-4 and upper shower plate 1-1 and lower shower plate 1-10, be all provided with polyester insulated to realize the insulation between exciting electrode 1-4 and movable plasma case.
In large-scale plasma body case, the purposes of shower plate is that working gas is spread to each region of discharge that parallel pole is formed uniformly, to form the film of even thickness.
In known traditional plasma case on shower plate the shape of through hole and distribute as shown in Figure 2, shape and the distribution of two kinds of conventional holes that use in Fig. 2 A and Fig. 2 B graphic extension prior art, the tradition spray plate hole that wherein Fig. 2 A shows is the evenly distributed clear opening with same apertures, and aperture Φ is that 0.5mm is to 1mm.
Traditional shower plate that Fig. 2 B shows is the hole of the evenly distributed entrance and exit diameter with different size, and inlet aperture is greater than outlet aperture, and inlet aperture is in 1mm left and right, and outlet aperture is less than inlet aperture in 0.5mm left and right.
Use the shower plate shown in Fig. 2 B with the hole in different entrance and exits aperture to improve to a certain extent the homogeneity of deposit film with respect to shower plate shown in Fig. 2 A, but do not reach gratifying effect.
In the time using large area plasma filming equipment, along with the increase of plasma case size, in plasma case, the homogeneity of working gas pressure often has not satisfied variation, its reason is exactly the increase along with plasma case linear dimension, gas stream is in the time of long and narrow cavity, pressure distribution is no longer even everywhere at cavity for working gas, cause the gas volume that enters region of discharge by above-mentioned each tradition spray plate hole in the unit time to have very large difference, concrete, working gas enters after the cavity of plasma case upper strata at a high speed by the circular inlet mouth in cavity one end, forwards and both sides transport, because inlet mouth and high-speed gas transport the restriction of direction and inertia, make to form gas near the cavity space of inlet mouth and be difficult to the dead angle arriving smoothly, gaseous tension is lower, along with the gaseous tension that carries out transporting tends to be steady gradually, but because most of working gas in this process enters after region of discharge reacts and discharges through air-bleed system via shower plate, so it is fewer more to approach the other end airshed, gaseous tension is also lower.The ununiformity presenting from inlet mouth to the other end gaseous tension as shown in Fig. 5 curve 1 distributes.
If use the evenly distributed traditional shower plate in above-mentioned hole must cause working gas to enter after region of discharge the heterogeneity of pressure distribution throughout, make unit volume reactant gases decomposition amount everywhere, namely film deposition rate changes along with the variation of substrate position, in this case for length x
0be the film gauge uniformity that the shower plate of 1330 ~ 1460mm causes be generally ± 4.2%, typical homogeneity ± 3.0% requiring in manufacturing than industry is far short of what is expected, the film gauge uniformity that this design causes to more large-scale plasma case is poorer.
So, must there is special design to meet the uniformity requirement in plasma treatment process such as the shower plate of the plasma case of big area PECVD depositing system.
Summary of the invention
For overcoming the defect of prior art, the object of the invention is to propose a kind of homogeneity that can improve air pressure distribution in large area plasma case region of discharge, and then improve the shower plate of deposit film thickness evenness.
The present invention is achieved through the following technical solutions:
A kind of shower plate, its main body is stainless steel plate, on the lower face of described stainless steel plate, offers groove, described groove comprises the exciting electrode groove and the ground-electrode groove that are arranged alternately; Described stainless steel plate is provided with the through hole that is positioned at groove both sides and runs through the upper and lower plate face of stainless steel plate.
Further, the quantity of described exciting electrode groove is N, and the quantity of described ground-electrode groove is N-1, and described through hole is 2N row, and described N is integer.
Further, the degree of depth of described groove is the 1/3-2/3 of stainless steel plate thickness, and the width of described exciting electrode groove and the thickness of exciting electrode adapt, and the width of described ground-electrode groove and the thickness of ground-electrode adapt.
Further, described through hole comprises coaxial outer hole, mesopore and the endoporus arranging from top to bottom; The vertical section of described outer hole and mesopore is rectangle, and the aperture of mesopore is less than the aperture in outer hole; The vertical section of described endoporus is that the aperture, top of trapezoidal and endoporus equates with the aperture of mesopore.
Further, arrays of openings has following two schemes:
The first: with adjacent two through hole spacing d in row
1be 20mm, the shortest two through hole spacing d of adjacent two row's middle distance
2be 35mm; Pressure when respective aperture is passed through with gas Steady Flow respectively in the aperture, bottom of the aperture in described outer hole, the aperture of mesopore and endoporus is inversely proportional to.
The second: the aperture Φ in described outer hole
1for 8mm, the aperture Φ of mesopore
2for 1mm, the bottom diameter of phi of endoporus
3for 2mm, the shortest two through hole spacing d of adjacent two row's middle distance
2be 35mm; With the spacing d of adjacent two through hole in row
1be inversely proportional to through the pressure at corresponding two through hole spacing mid-way place with gas Steady Flow.
Further, the high h in the hole in described outer hole
1for 8mm, the high h in the hole of mesopore
2for 1mm, the high h in the hole of endoporus
3for 1mm.
Another object of the present invention is to propose a kind of plasma case for plasma reinforced chemical vapor deposition system, comprise two shower plates as described in as arbitrary in claim 1-7, also comprise cover plate and N exciting electrode and N+1 the ground-electrode alternately arranged, N is integer;
Outermost two ground-electrodes are as the side plate of plasma case, and the inner side of two side plates is a substrate of carrying respectively, and the remaining electrode except side plate carries respectively two substrates, between each adjacent electrode, forms region of discharge; The top of described exciting electrode and ground-electrode, bottom are respectively equipped with a public shower plate; The shower plate top at top is provided with the hollow form cover plate of a bottom opening, and forms semi-enclosed cavity with cover plate, and described cover plate is provided with inlet mouth.
Further, described inlet mouth is connected with external feed stream system by corrugated tube.
Further, between described exciting electrode and two shower plates, be all provided with polyester insulated, to realize the insulation between exciting electrode and plasma case.
Beneficial effect of the present invention is:
1. shower plate of the present invention is simple in structure, is easy to realize, and is applicable to any plasma case, only need to the through hole of shower plate be made slightly and be changed, and does not need article on plasma case to do larger change.
2. shower plate of the present invention not only can improve working gas in large area plasma case and, in region of discharge pressure distribution, improve the thickness evenness of deposit film, obtains the semiconductor film of better quality.Also can increase the diffraction of gas, reduce the collision of gas molecule and hole wall, reduce the gas conduction of shower plate, improve the cleaning speed of shower plate.
3. after shower plate being improved according to structure of the present invention, eliminate the defect that in plasma case, miscellaneous part brings, improved the overall performance of plasma case.
Accompanying drawing explanation
Preferably execute routine more specific description by of the present invention shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.Be to be understood that using the object of accompanying drawing is the concept of the embodiment that discusses of graphic extension text, not draws to scale.
Fig. 1 is the common plasma case simplified construction schematic diagram that comprises shower plate, wherein: the upper shower plate of 1-1-; 1-2-cavity; 1-3-region of discharge; 1-4-exciting electrode; 1-5-ground-electrode; 1-6-through hole; 1-7-cover plate; 1-8-inlet mouth; 1-9-corrugated tube; Shower plate under 1-10-; 1-11-groove; 1-12-side plate;
Fig. 2 is shape and the distribution schematic top plan view that shows two kinds of tradition spray plate holes that use in structure shown in Fig. 1; Wherein: the spray plate hole that Fig. 2 A shows is the evenly distributed clear opening with same apertures, and aperture Φ is that 0.5mm is to 1mm; The spray plate hole that Fig. 2 B shows is the evenly distributed hole with different entrance and exit diameters, inlet aperture: 1mm, outlet aperture: 0.5mm;
Fig. 3 is the distribution schematic top plan view that sprays plate hole in the present invention, wherein: wherein d
1pitch of holes between-row; d
2-adjacent two round spacing;
Fig. 4 is shower plate internal structure schematic side view in the present invention, wherein: h
1-outer hole is high; Φ
1aperture ,-outer hole; h
2-mesopore is high; Φ
2-mesopore aperture; h
3-endoporus is high; Φ
3aperture ,-endoporus bottom; α-base angle;
Fig. 5 be show in structure ionic medium case shown in Fig. 1 in cavity air pressure on airintake direction distribute and improve after middle straight hole pore size distribution curve, wherein: curve 1 be the interior air pressure distribution curve of cavity; Curve 2 is the middle straight hole pore size distribution curve after improving;
Fig. 6 is according to the distribution schematic top plan view of the spray plate hole of first embodiment of the invention, wherein: Φ '
1aperture ,-outer hole; Φ '
2-mesopore aperture; D '
1pitch of holes between-row; D '
2-adjacent two round spacing;
Fig. 7 is according to the distribution schematic top plan view of the spray plate hole of second embodiment of the invention, wherein: Φ "
1aperture ,-outer hole; Φ "
2-mesopore aperture; D "
1pitch of holes between-row; D "
2-adjacent two round spacing;
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details are set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from other modes described here, and those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that.Therefore the invention of this reality is not subject to below the openly restriction of specific embodiment.
Shower plate of the present invention and the plasma case that comprises these parts are applicable to but are not limited to practical large area plasma deposition apparatus in the production of PDP, LCD, solar cell.
Embodiment 1
In this example for the plasma case structure of the large-scale PECVD system of plated film as shown in Figure 1, N exciting electrode 1-4 and N+1 ground-electrode 1-5(N are alternately installed in plasma case is integer, especially take 5≤N≤10 as good), wherein outermost two ground-electrodes are as the side plate 1-12 of plasma case, each exciting electrode all, independently by a radio-frequency power supply energy supply, forms region of discharge 1-3 between each adjacent electrode.Exciting electrode and ground-electrode are arranged between two shower plates, a public upper shower plate 1-1 is equipped with at the top that is exciting electrode and ground-electrode, its main body is stainless steel plate, there is upper face and lower face, on stainless steel plate, to offer the 2N exhausting hole 1-6(N that vertically runs through upper and lower plate face be integer, especially take 5≤N≤10 as good).The hollow form cover plate 1-7 of a bottom end opening is equipped with at the top of upper shower plate 1-1, and upper shower plate 1-1 and cover plate 1-7 form semi-enclosed cavity 1-2, on this cover plate 1-7, is provided with inlet mouth 1-8, and this inlet mouth is connected with external feed stream system by corrugated tube 1-9.A public lower shower plate 1-10 is also equipped with in the bottom (being the bottom of plasma case) of exciting electrode and ground-electrode, and the structure of upper and lower shower plate is identical, and is separately positioned on top and the bottom of electrode with symmetric form.Working gas enters in the cavity 1-2 of shower plate 1-1 and cover plate 1-7 formation through inlet system and corrugated tube 1-9 from storage vessel, then flow down from each exhausting hole 1-6 of upper shower plate, enter each region of discharge 1-3 that parallel pole is formed and flow downward along region of discharge 1-3, reacted gas is through all multi-through hole 1-6 on lower shower plate 1-10, flow to outside movable plasma case, discharged by air-bleed system.Between exciting electrode 1-4 and upper and lower shower plate 1-1,1-10, be all provided with polyester insulated to realize the insulation between exciting electrode 1-4 and plasma case.
On, the thickness of lower shower plate is 10mm, on, the area of lower shower plate is: (410 ~ 830) × (1330 ~ 1460) mm, on the lower face of upper shower plate 1-1 and on the upper face of lower shower plate 1-10, be symmetrically distributed with the different rectangular recess 1-11 of width, depth of groove is 5mm, width bits 10mm and 20mm alternative arrangement, its effect is that exciting electrode and ground-electrode are stuck in, between lower shower plate, wherein the groove of width 10mm is as ground-electrode groove, directly connect ground-electrode, the groove of width 20mm is as exciting electrode groove, after first connecting polyester insulated, be connected with exciting electrode again, to realize the insulation between exciting electrode and movable plasma case.
On upper and lower shower plate, be arranged with respectively 2N exhausting hole 1-6, as shown in Figure 4, through hole comprises coaxial outer hole, mesopore and the endoporus arranging from top to bottom; The vertical section of outer hole and mesopore is rectangle, and the aperture of mesopore is less than the aperture in outer hole; The vertical section of endoporus is that the top end diameter of trapezoidal and endoporus and the aperture of mesopore equate.As shown in Figure 6, the shortest two through hole spacing (the being adjacent two round spacing) d ' of adjacent two row's middle distance
2identical, be 35mm, with adjacent two through hole spacing in row (i.e. pitch of holes between row) d '
1identical, be 20mm; The vertical section of through hole is class doline.As shown in Figure 5, during due to gas Steady Flow, at shower plate central gas equalization of pressure, therefore each through-hole aperture at every row middle part is all identical in this example, and each parameter is as follows: the high h ' in outer hole
1: 8mm, outer hole aperture Φ '
1: 8mm, the high h ' of mesopore
2: 1mm, mesopore aperture Φ '
2: 1mm, the high h ' of endoporus
3: 1mm, the aperture, top of endoporus is identical with mesopore aperture, aperture, bottom Φ '
3: 2mm, the base angle of endoporus: 64 °.Base angle is selected 64 ° herein, and the gas that this angle is sprayed can arrive the substrate upper limb of being close to electrode smoothly.Pressure when aperture, outer hole, mesopore aperture and the endoporus bottom diameter of shower plate two ends through hole passes through respective aperture with gas Steady Flow is respectively inversely proportional to, outer hole aperture Φ '
1distribute as shown in Fig. 5 curve 2, mesopore aperture Φ '
2with endoporus bottom aperture Φ '
3on above-mentioned parameter basis, do in proportion and change.
Aperture, hole Φ ' beyond institute
1change mesopore aperture Φ ' at 8-9.6mm
2change endoporus bottom aperture Φ ' at 1-1.2mm
3change at 2-2.4mm.
Adopt the plasma case of shower plate produces in the present embodiment thickness of semiconductor film homogeneity within the scope of ± 0.9-1.2%, much smaller than typical homogeneity ± 3.0% requiring during industry is manufactured.Under similarity condition, adopt uniformity of film that the plasma case of the shower plate that hole shape is identical, hole size is identical, pitch of holes is identical (Fig. 3, Fig. 4) makes at ± 3.5-3.8%.The uniformity of film that under similarity condition, the plasma case of employing (Fig. 2 A, 2B) shower plate is made is in ± 4.2% left and right.
Embodiment 2
The plasma case structure of the large-scale PECVD system for plated film described in this example, substantially with embodiment 1, has different being only:
As shown in Figure 7, in this example, upper shower plate 1-1 is identical with the aperture of the upper each through hole of lower shower plate 1-10, and parameter is as follows: the shortest two through hole spacing (the being adjacent two round spacing) d of adjacent two row's middle distance
2identical, be 35mm; The high h in outer hole "
1: 8mm, outer hole aperture Φ "
1: 8mm, the high h of mesopore "
2: 1mm, mesopore aperture Φ "
2: 1mm, inner hole section is trapezoidal, the high h of endoporus "
3: 1mm, bottom diameter of phi "
3: 2mm, base angle: 64 °.With adjacent two through hole spacing in row (i.e. pitch of holes between row) d "
1be inversely proportional to through the pressure at corresponding two through hole spacing mid-way place with gas Steady Flow, so pitch of holes d between row "
1less the closer to two ends, change at 16.67-20mm.
Adopt the plasma case of shower plate produces in the present embodiment thickness of semiconductor film homogeneity within the scope of ± 0.9-1.2%, under similarity condition, adopt uniformity of film that the plasma case of the shower plate that hole shape is identical, hole size is identical, pitch of holes is identical (Fig. 3, Fig. 4) makes at ± 3.5-3.8%.The uniformity of film that under similarity condition, the plasma case of employing (Fig. 2 A, 2B) shower plate is made is in ± 4.2% left and right.
The distribution of the spray plate hole that the embodiment of the present invention 1 and example 2 design, make working gas enter region of discharge after pressure distribution more even, improved the homogeneity of deposit film thickness distribution.
Although the present invention with preferred embodiment openly as above, but be not intended to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, can utilize above-mentioned disclosed method and technology contents to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention, any simple modification, equivalent variations and the modification above invention done according to technical spirit of the present invention, all still belong in the protection domain of technical solution of the present invention.
Claims (10)
1. a shower plate, is characterized in that: the main body of this shower plate is stainless steel plate, on the lower face of described stainless steel plate, offers groove, and described groove comprises the exciting electrode groove and the ground-electrode groove that are arranged alternately; Described stainless steel plate is provided with the through hole that is positioned at groove both sides and runs through the upper and lower plate face of stainless steel plate.
2. shower plate as claimed in claim 1, is characterized in that:
The quantity of described exciting electrode groove is N, and the quantity of described ground-electrode groove is N-1, and described through hole is 2N row, and described N is integer.
3. shower plate as claimed in claim 1, is characterized in that:
The degree of depth of described groove is 1/3-2/3 of stainless steel plate thickness, and the width of described exciting electrode groove and the thickness of exciting electrode adapt, and the width of described ground-electrode groove and the thickness of ground-electrode adapt.
4. shower plate as claimed in claim 1, is characterized in that: described through hole comprises coaxial outer hole, mesopore and the endoporus arranging from top to bottom; The vertical section of described outer hole and mesopore is rectangle, and the aperture of mesopore is less than the aperture in outer hole; The vertical section of described endoporus is that the aperture, top of trapezoidal and endoporus equates with the aperture of mesopore.
5. shower plate as claimed in claim 4, is characterized in that:
With adjacent two through hole spacing d in row
1be 20mm, the shortest two through hole spacing d of adjacent two row's middle distance
2be 35mm; Pressure when the bottom diameter of the aperture in described outer hole, the aperture of mesopore and endoporus passes through respective aperture with gas Steady Flow is respectively inversely proportional to.
6. shower plate as claimed in claim 4, is characterized in that:
The aperture Φ in described outer hole
1for 8mm, the aperture Φ of mesopore
2for 1mm, aperture, the bottom Φ of endoporus
3for 2mm, the shortest two through hole spacing d of adjacent two row's middle distance
2be 35mm; With the spacing d of adjacent two through hole in row
1be inversely proportional to through the pressure at corresponding two through hole spacing mid-way place with gas Steady Flow.
7. the shower plate as described in claim 5 or 6, is characterized in that:
The high h in hole in described outer hole
1for 8mm, the high h in the hole of mesopore
2for 1mm, the high h in the hole of endoporus
3for 1mm.
8. the plasma case for plasma reinforced chemical vapor deposition system, it is characterized in that: this plasma case comprises two shower plates as described in as arbitrary in claim 1-7, also comprise cover plate and N exciting electrode and N+1 the ground-electrode alternately arranged, N is integer;
Outermost two ground-electrodes are as the side plate of plasma case, and the inner side of two side plates is a substrate of carrying respectively, and the remaining electrode except side plate carries respectively two substrates, between each adjacent electrode, forms region of discharge; The top of described exciting electrode and ground-electrode, bottom are respectively equipped with a public shower plate; The shower plate top that is positioned at top is provided with the hollow form cover plate of a bottom opening, and forms semi-enclosed cavity with cover plate, and described cover plate is provided with inlet mouth.
9. plasma case as claimed in claim 8, is characterized in that:
Described inlet mouth is connected with external feed stream system by corrugated tube.
10. plasma case as claimed in claim 8, is characterized in that:
Between described exciting electrode and two shower plates, be all provided with polyester insulated, to realize the insulation between exciting electrode and plasma case;
Each exciting electrode is all independently by a radio-frequency power supply energy supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310003503.XA CN103911601B (en) | 2013-01-06 | 2013-01-06 | A kind of shower plate and comprise the plasma case of this shower plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310003503.XA CN103911601B (en) | 2013-01-06 | 2013-01-06 | A kind of shower plate and comprise the plasma case of this shower plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103911601A true CN103911601A (en) | 2014-07-09 |
| CN103911601B CN103911601B (en) | 2016-07-06 |
Family
ID=51037596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310003503.XA Expired - Fee Related CN103911601B (en) | 2013-01-06 | 2013-01-06 | A kind of shower plate and comprise the plasma case of this shower plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103911601B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101018886A (en) * | 2004-07-12 | 2007-08-15 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser curvature |
| CN101962759A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
-
2013
- 2013-01-06 CN CN201310003503.XA patent/CN103911601B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101018886A (en) * | 2004-07-12 | 2007-08-15 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser curvature |
| CN101962759A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103911601B (en) | 2016-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI550123B (en) | Gas delivery and distribution system for uniform process in linear-type large-area plasma reactor and a processing chamber therefor | |
| US7721673B2 (en) | Hollow cathode discharging apparatus | |
| CN100552878C (en) | Plasma processing apparatus and employed electrode thereof | |
| CN102492937A (en) | Inlet spray head used for reaction chamber of metal chemical vapor deposition equipment | |
| KR101349266B1 (en) | Plasma processing apparatus and method of forming micro crystal silicon layer | |
| CN203187752U (en) | Spraying plate and plasma box with spraying plates | |
| TWI427183B (en) | Plasma processing apparatus | |
| CN102634774A (en) | Method for preparing amorphous silicon germanium thin-film batteries with box type PECVD (plasma enhanced chemical vapor deposition) equipment | |
| JP2004296526A (en) | Plasma cvd apparatus | |
| CN103911601A (en) | Spraying plate and plasma box containing spraying plates | |
| CN106011786B (en) | Atmospheric pressure disperse electric discharge device and metal surface deposition class SiO2Film process | |
| JP5329796B2 (en) | Plasma processing equipment | |
| TWI417417B (en) | Apparatus for large area atmospheric pressure plasma enhanced chemical vapor deposition without electrode and film contaminations | |
| CN101701333B (en) | Rectangular chemical vapour deposition reactor | |
| CN101472384A (en) | Atmos plasma reactor | |
| CN210657127U (en) | Gas distribution device of chemical vapor deposition coating equipment | |
| CN101768733A (en) | Gas distribution device and plasma processing device | |
| CN114672768A (en) | Thin film deposition apparatus | |
| CN104120410A (en) | Reaction cavity and plasma processing equipment | |
| CN116240616A (en) | Cleaning device, electroplating equipment and electroplating production line | |
| JP2012102341A (en) | Cleaning device and cleaning method | |
| CN101192500A (en) | Hollow type cathode discharging device | |
| KR101407068B1 (en) | FAST REMOTE PLASMA ATOmic layer deposition apparatus | |
| CN103031543B (en) | Top electrode and plasma processing equipment using top electrode | |
| KR101299160B1 (en) | Electrode assembly atmospheric pressure chemical vapor deposition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160706 Termination date: 20190106 |