CN103890219A - 包含稀土元素的喷镀用粉末和覆膜、以及具备前述覆膜的构件 - Google Patents

包含稀土元素的喷镀用粉末和覆膜、以及具备前述覆膜的构件 Download PDF

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CN103890219A
CN103890219A CN201280046473.4A CN201280046473A CN103890219A CN 103890219 A CN103890219 A CN 103890219A CN 201280046473 A CN201280046473 A CN 201280046473A CN 103890219 A CN103890219 A CN 103890219A
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spraying plating
powder
rare earth
family
earth element
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水野宏昭
北村顺也
小林义之
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Fujimi Inc
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Fujimi Inc
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Abstract

本发明的喷镀用粉末包含稀土元素和周期表的第2族元素。包含稀土元素和第2族元素的喷镀用粉末例如可以由稀土元素化合物和第2族元素化合物的混合物、或者由含有稀土元素和第2族元素的化合物或固溶体形成。喷镀用粉末还可以包含除稀土元素和第2族元素以外且除氧以外的元素即稀释元素，例如选自钛、锆、铪、钒、铌、钽、锌、硼、铝、镓、硅、钼、钨、锰、锗和磷中的一种以上的元素。

Description

包含稀土元素的喷镀用粉末和覆膜、以及具备前述覆膜的构件
技术领域
本发明涉及包含稀土元素的喷镀用粉末。本发明还涉及包含稀土元素的覆膜和具备这种覆膜的构件。
背景技术
在半导体器件制造领域中，有时通过属于干蚀刻的一种的等离子体蚀刻进行硅晶圆等半导体基板的微细加工。在该蚀刻处理时，存在暴露在反应性等离子体中的半导体器件制造装置中的构件受到侵蚀（损伤）而产生微粒的担心。如果产生的微粒在半导体基板上堆积，则按照设计的微细加工的实施变得困难，或半导体基板因微粒中包含的元素而被污染。因此，以往进行的是：在蚀刻处理时暴露在反应性等离子体中的构件上设置包含稀土元素的喷镀膜，利用其保护该构件免受等离子体侵蚀（例如，参照专利文献1）。
然而，即使是包含稀土元素的喷镀膜也不能完全地抑制微粒的产生。为了尽量减小微粒造成的不利影响，首先，重要的是减少在半导体基板上堆积的微粒的数量，减少喷镀膜受到等离子体侵蚀时产生的微粒的尺寸对此是有效的。这是因为，有时尺寸小的微粒在蚀刻处理中悬浮并受到反应性等离子体造成的侵蚀而最终气化，由此消失，或者容易随着半导体器件制造装置内的气流而被排出到外部，不会堆积在半导体基板上。
另外，在减小产生的微粒的尺寸的基础上，还期望降低以微粒中包含的元素为主要原因而引起的半导体基板的污染（例如，参照专利文献2）。该污染的程度可以通过清洗蚀刻处理后的半导体基板并将清洗后的清洗液回收进行化学分析来评价。在将设置了包含以稀土元素为主要成分的喷镀膜的构件用于半导体器件制造装置时，由于由喷镀膜产生的微粒中变得包含大量稀土元素，因此存在如下的担心：半导体基板上堆积的微粒中的稀土元素的含量超过容许水平，产生所谓的不合规格（out of specifications）。
现有技术文献
专利文献
专利文献1：日本特开2008-133528号公报
专利文献2：日本特表2010-535288号公报
发明内容
发明要解决的问题
因此，本发明的目的在于提供一种喷镀用粉末，其适合于形成在受到等离子体侵蚀时难以产生尺寸大的微粒的喷镀膜。另外，本发明的其它目的在于提供在受到等离子体侵蚀时难以产生尺寸大的微粒的覆膜和在表面具备这种覆膜的构件。
用于解决问题的方案
为了达成上述的目的，在本发明的第1实施方式中，提供一种喷镀用粉末，其包含稀土元素和周期表的第2族元素。稀土元素和第2族元素以例如氧化物的形态包含在喷镀用粉末中。喷镀用粉末还可以以例如氧化物的形态包含除稀土元素和第2族元素以外且除氧以外的元素即稀释元素。稀释元素例如可以是选自钛、锆、铪、钒、铌、钽、锌、硼、铝、镓、硅、钼、钨、锰、锗和磷中的一种以上的元素。或者，稀释元素也可以是锆与除稀土元素和第2族元素以外且除氧和锆以外的一种以上的元素的组合。
在本发明的第2实施方式中，提供一种覆膜，其是将第1实施方式的喷镀用粉末进行喷镀而得到的。
在本发明的第3实施方式中，提供一种覆膜，其包含稀土元素和周期表的第2族元素。
在本发明的第4实施方式中，提供一种构件，其在表面具备第2实施方式或第3实施方式的覆膜。
发明的效果
根据本发明，能够提供一种喷镀用粉末，其适合于形成在受到等离子体侵蚀时难以产生尺寸大的微粒的喷镀膜。另外，根据本发明，还能够提供在受到等离子体侵蚀时难以产生尺寸大的微粒的覆膜和在表面具备这种覆膜的构件。
具体实施方式
以下对本发明的一个实施方式进行说明。需要说明的是，本发明并不限定于以下的实施方式，可以在不损害本发明的宗旨的范围内适宜地变更。
本实施方式的喷镀用粉末包含稀土元素，以及属于周期表的第2族的元素即第2族元素。
稀土元素具体是指：钪（元素符号Sc）、钇（元素符号Y）、镧（元素符号La）、铈（元素符号Ce）、镨（元素符号Pr）、钕（元素符号Nd）、钷（元素符号Pm）、钐（元素符号Sm）、铕（元素符号Eu）、钆（元素符号Gd）、铽（元素符号Tb）、镝（元素符号Dy）、钬（元素符号Ho）、铒（元素符号Er）、铥（元素符号Tm）、镱（元素符号Yb）和镥（元素符号Lu）。其中，地壳中较多存在的Sc、Y、La、Ce、Pr、Nd、Sm、Gd、Dy、Er和Yb、尤其Sc、Y、La、Ce和Nd是适宜的。
第2族元素具体是指：铍（元素符号Be）、镁（元素符号Mg）、钙（元素符号Ca）、锶（元素符号Sr）、钡（元素符号Ba）和镭（元素符号Ra）。其中，地壳中较多存在的Mg、Ca、Sr和Ba、尤其Mg、Ca和Sr是适宜的。
喷镀用粉末中的稀土元素的含量优选以氧化物换算为20mol%以上、更优选为25mol%以上、进一步优选为30mol%以上、特别优选为35mol%以上。稀土元素氧化物等稀土元素的化合物的化学稳定性高，耐等离子体侵蚀性优异。因此，随着喷镀用粉末中的稀土元素的含量增高，将喷镀用粉末进行喷镀而得到的覆膜的耐等离子体侵蚀性有提高的倾向。
喷镀用粉末中的稀土元素的含量还优选以氧化物换算为90mol%以下、更优选为80mol%以下、进一步优选为70mol%以下、特别优选为60mol%以下。稀土元素昂贵，且稀土元素还因产地不均匀而有供给不稳定的方面。在这方面，随着喷镀用粉末中的稀土元素的含量降低，有喷镀用粉末的原料供给风险减少这样的利点。
喷镀用粉末中的第2族元素的含量优选以氧化物换算为3mol%以上、更优选为3.5mol%以上、进一步优选为4mol%以上、特别优选为4.5mol%以上。随着喷镀用粉末中的第2族元素的含量增高，将喷镀用粉末进行喷镀而得到的覆膜在受到等离子体侵蚀时产生的微粒的尺寸变小。其理由可认为：由于与稀土元素的化合物相比，第2族元素的化合物的耐等离子体侵蚀性低，因此通过第2族元素的添加，覆膜中容易受到等离子体造成的攻击的弱点变为分散存在。与此相对，在覆膜中弱点未分散的情况下，等离子体造成的攻击集中在覆膜中的少数弱点，其结果有可能产生尺寸大的微粒。
喷镀用粉末中的第2族元素的含量还优选以氧化物换算为20mol%以下、更优选为15mol%以下、进一步优选为12mol%以下、特别优选为10mol%以下。如上所述，第2族元素的化合物的耐等离子体侵蚀性比较低。因此，随着喷镀用粉末中的第2族元素的含量降低，将喷镀用粉末进行喷镀而得到的覆膜的耐等离子体侵蚀性有提高的倾向。
喷镀用粉末还可以包含除稀土元素和第2族元素以外且除氧以外的元素作为稀释元素，所述稀释元素是出于降低喷镀用粉末中以及将喷镀用粉末进行喷镀而得到的覆膜中的稀土元素和第2族元素的含量的比率的目的而添加在喷镀用粉末中的。作为稀释元素的具体例子，例如可列举出钛（元素符号Ti）、锆（元素符号Zr）、铪（元素符号Hf）、钒（元素符号V）、铌（元素符号Nb）、钽（元素符号Ta）、锌（元素符号Zn）、硼（元素符号B）、铝（元素符号Al）、镓（元素符号Ga）、硅（元素符号Si）、钼（元素符号Mo）、钨（元素符号W）、锰（元素符号Mn）、锗（元素符号Ge）和磷（元素符号P），只要是除稀土元素和第2族元素以外且除氧以外的元素就没有特别的限定。其中，使用锆作为稀释元素时，与使用其它稀释元素的情况相比，有将喷镀用粉末进行喷镀而得到的覆膜的耐等离子体侵蚀性提高这样的利点。
喷镀用粉末中的稀释元素的含量优选以氧化物换算为10mol%以上、更优选为20mol%以上、进一步优选为30mol%以上、特别优选为40mol%以上。随着喷镀用粉末中的稀释元素的含量增高，会抑制稀土元素的使用量，从而能够减少喷镀用粉末的原料供给风险和原料成本。另外，通过相对减少将喷镀用粉末进行喷镀而得到的喷镀膜在受到等离子体侵蚀时产生的微粒中所包含的稀土元素和第2族元素的量，在硅晶圆等半导体基板中出现由微粒中的稀土元素和第2族元素造成的污染的担心也减少。
喷镀用粉末中的稀释元素的含量还优选以氧化物换算为60mol%以下、更优选为57mol%以下、进一步优选为55mol%以下、特别优选为48mol%以下。稀释元素的化合物的耐等离子体侵蚀性通常比稀土元素的化合物的耐等离子体侵蚀性低。因此，随着喷镀用粉末中的稀释元素的含量降低，将喷镀用粉末进行喷镀而得到的覆膜的耐等离子体侵蚀性有提高的倾向。
喷镀用粉末例如可以由稀土元素的化合物和第2族元素的化合物的混合物、或者由含有稀土元素和第2族元素的化合物或固溶体形成。稀土元素的化合物的典型例子是稀土元素氧化物。第2族元素的化合物的典型例子是第2族元素氧化物。含有稀土元素和第2族元素的化合物或固溶体的典型例子是稀土元素与第2族元素的复合氧化物。如果是喷镀用粉末包含稀释元素的情况，则喷镀用粉末例如由稀土元素的化合物、第2族元素的化合物和稀释元素的化合物的混合物、或者由含有稀土元素、第2族元素和稀释元素的化合物或固溶体形成。
喷镀用粉末例如可以通过在由稀土元素氧化物等稀土元素的化合物形成的粉末中混合由第2族元素氧化物等第2族元素的化合物形成的粉末，如果需要则进一步混合稀释元素的化合物（例如氧化物）来制造。使用的稀土元素化合物的粉末优选的是：以用激光散射·衍射式的粒度分布测定仪测定的粒径计为10μm以下、进一步而言为6μm以下、3μm以下或1μm以下的颗粒以粉末中的体积比计，占90%以上。通过使用粒度细的粉末作为稀土元素化合物的粉末，能够减小将喷镀用粉末进行喷镀而得到的覆膜在受到等离子体侵蚀时产生的微粒的尺寸。其理由可认为是因为覆膜中的稀土元素化合物部分和第2族元素化合物部分之中的稀土元素化合物部分的尺寸变小。
或者，也可以通过如下的方法来制造喷镀用粉末：将包含稀土元素的化合物或单体的粉末和第2族元素的化合物或单体的粉末、如果需要则进一步含有稀释元素的化合物或单体的原料粉末进行造粒并烧结。此时，即使在稀土元素、第2族元素和稀释元素各自以氧化物以外的形态、例如单体、氢氧化物、盐的形态存在于原料粉末中的情况下，在烧结的过程中它们也可以转换成氧化物。
在制造由通过原料粉末的造粒和烧结而得到的造粒-烧结颗粒形成的喷镀用粉末时，原料粉末的造粒可以通过对将原料粉末混合在适当的分散介质中并根据需要添加粘结剂而成的浆料进行喷雾造粒来进行，也可以由原料粉末通过滚动造粒或压缩造粒而直接来进行。造粒后的原料粉末的烧结在大气中、氧气氛中、真空中和非活性气体气氛中的任一种中进行均可。其中，为了使以氧化物以外的形态存在的原料粉末中的元素转换为氧化物，优选在大气中或氧气氛中进行。对烧结温度没有特别的限定，优选为1000～1700℃、更优选为1100～1700℃、进一步优选为1200～1700℃。对烧结时的最高温度保持时间也没有特别的限定，优选为10分钟～24小时、更优选为30分钟～24小时、进一步优选为1～24小时。
本实施方式的喷镀用粉末可以用于通过等离子体喷镀法、高速火焰喷镀法、火焰喷镀法、***喷镀法、气溶胶沉积法等喷镀法在半导体器件制造装置中的构件或其它构件的表面形成覆膜的用途。在将喷镀用粉末进行喷镀而得到的覆膜中，以氧化物等的化合物的形态包含至少稀土元素和第2族元素。
喷镀膜中的稀土元素化合物部分优选的是，通过利用场发射型扫描电子显微镜得到的反射电子图像观察到的尺寸为20μm2以下、更优选为2μm2以下、进一步优选为0.2μm2以下、特别优选为0.02μm2以下。随着稀土元素化合物部分的尺寸变小，能够减小由在受到等离子体侵蚀时由喷镀膜产生的微粒的尺寸。
对喷镀膜的厚度没有特别的限定，例如可以为30～1000μm。其中，优选为50～500μm、更优选为80～300μm。
根据本实施方可以得到以下的作用和效果。
·本实施方式的喷镀用粉末包含稀土元素和第2族元素。因此，对于将该喷镀用粉末进行喷镀而得到的包含稀土元素和第2族元素的覆膜，作为稀土元素产生的效果，具有高耐等离子体侵蚀性，另一方面，作为第2族元素产生的效果，具有难以产生尺寸大的微粒的性质。即，根据本实施方式，能够提供适合于形成在受到等离子体侵蚀时难以产生尺寸大的微粒的喷镀膜的喷镀用粉末。另外，也能够提供在受到等离子体侵蚀时难以产生尺寸大的微粒的覆膜和在表面具备这种覆膜的构件。
·本实施方式的喷镀用粉末在包含稀土元素的基础上还包含第2族元素，根据情况，还包含有除稀土元素和第2族元素以外且除氧以外的稀释元素。因此，能够抑制存在昂贵且供给不稳定的方面的稀土元素的使用量，能够减少喷镀用粉末的原料供给风险。另外，通过相对减少将喷镀用粉末进行喷镀而得到的喷镀膜在受到等离子体侵蚀时产生的微粒中所包含的稀土元素的量，在硅晶圆等半导体基板中出现由微粒中的稀土元素造成的污染的担心也小。
前述实施方式可如下进行变更。
·前述实施方式的喷镀用粉末也可以包含2种以上、优选为3种以上的稀土元素。即，也可以包含选自Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb和Lu的两种以上、优选为三种以上的元素。此时，将喷镀用粉末进行喷镀而得到的覆膜在受到等离子体侵蚀时产生的微粒中的稀土元素的含量分散在每种稀土元素中，因此能够减少在半导体基板上堆积的微粒中的各稀土元素的含量超过容许水平的担心。喷镀用粉末中的各稀土元素的含量优选以氧化物换算为3mol%以上、更优选为5mol%以上、进一步优选为10mol%以上。喷镀用粉末中的各稀土元素的含量还优选以氧化物换算为50mol%以下、更优选为40mol%以下、进一步优选为30mol%以下、特别优选为25mol%以下。
·前述实施方式的喷镀用粉末也可以包含2种以上、优选为3种以上的第2族元素。即，也可以包含选自Be、Mg、Ca、Sr、Ba和Ra的两种以上、优选为三种以上的元素。此时，将喷镀用粉末进行喷镀而得到的覆膜在受到等离子体侵蚀时产生的微粒中的第2族元素的含量分散在每种第2族元素中，因此能够减少在半导体基板上堆积的微粒中的各第2族元素的含量超过容许水平的担心。喷镀用粉末中的各第2族元素的含量优选以氧化物换算为1mol%以上、更优选为1.5mol%以上、进一步优选为2mol%以上、特别优选为2.5mol%以上。喷镀用粉末中的各第2族元素的含量以氧化物换算计还优选为15mol%以下、更优选为12mol%以下、进一步优选为10mol%以下、特别优选为8mol%以下。
·前述实施方式的喷镀用粉末也可以包含2种以上、优选为3种以上的稀释元素。例如，可以包含选自Ti、Zr、Hf、V、Nb、Ta、Zn、B、Al、Ga、Si、Mo、W、Mn、Ge和P的两种以上、优选为三种以上的元素。此时，将喷镀用粉末进行喷镀而得到的覆膜在受到等离子体侵蚀时产生的微粒中的稀释元素的含量分散在每种稀释元素中，因此能够减少在半导体基板上堆积的微粒中的各稀释元素的含量超过容许水平的担心。喷镀用粉末中的各稀释元素的含量优选以氧化物换算为5mol%以上、更优选为10mol%以上、进一步优选为15mol%以上、特别优选为20mol%以上。喷镀用粉末中的各稀释元素的含量还优选以氧化物换算为40mol%以下、更优选为30mol%以下、进一步优选为20mol%以下、特别优选为15mol%以下。其中，从将喷镀用粉末进行喷镀而得到的覆膜的耐等离子体侵蚀性由于添加锆而提高的方面来看，组合使用Zr（锆）与除了它以外的稀释元素是优选的。
·包含稀土元素和第2族元素的覆膜并不限于通过将前述实施方式那样的喷镀用粉末进行喷镀来形成，也可以用例如化学气相沉积法（CVD）、物理气相沉积法（PVD）这样的喷镀以外的手法来形成。用喷镀以外的手法形成的包含稀土元素和第2族元素的覆膜的厚度例如可以为0.1～100μm、优选为0.5～50μm、更优选为1～30μm。
接着，列举实施例和比较例来进一步对本发明进行具体说明。
准备包含稀土元素的实施例1～5和比较例1、2的喷镀用粉末，以及不包含稀土元素的比较例3的喷镀用粉末。实施例1～5的喷镀用粉末是通过将稀土元素的氧化物的粉末、第2族元素的氧化物的粉末以及除稀土元素和第2族元素以外且除氧以外的稀释元素的氧化物的粉末混合并进行造粒和烧结而制造的。比较例1的喷镀用粉末是通过将稀土元素的氧化物的粉末进行造粒和烧结而制造的。比较例2的喷镀用粉末是通过将稀土元素的氧化物的粉末以及除稀土元素和第2族元素以外且除氧以外的稀释元素的氧化物的粉末混合并进行造粒和烧结而制造的。比较例3的喷镀用粉末是将第2族元素的氧化物的粉末以及除稀土元素和第2族元素以外且除氧以外的稀释元素的氧化物的粉末混合并进行造粒和烧结而制造的。各喷镀用粉末的详细内容如表1所示。
表1的“稀土元素的种类”栏中示出各喷镀用粉末中所包含的稀土元素的种类。表1的“稀土元素氧化物的比率”栏中按照稀土元素的种类逐个示出各喷镀用粉末中的稀土元素氧化物的摩尔比率。
表1的“第2族元素的种类”栏中示出各喷镀用粉末中所包含的第2族元素的种类。表1的“第2族元素氧化物的比率”栏中按照第2族元素的种类逐个示出各喷镀用粉末中的第2族元素氧化物的摩尔比率。
表1的“稀释元素的种类”栏中示出各喷镀用粉末中所包含的稀释元素的种类。表1的“稀释元素氧化物的比率”栏中按照稀释元素的种类逐个示出各喷镀用粉末中的稀释元素氧化物的摩尔比率。
表1的“覆膜中的稀土元素化合物部分的尺寸”栏中示出将各喷镀用粉末在表2所示的喷镀条件下进行大气压等离子体喷镀而得到的喷镀膜中的稀土元素化合物部分的尺寸。该尺寸的测定是通过利用场发射型扫描电子显微镜得到的反射电子图像来观察喷镀膜而进行的。
将实施例1～5和比较例1～3的各喷镀用粉末在表2所示的喷镀条件下进行大气压等离子体喷镀，在通过褐色氧化铝研削材料（A#40）得到的、喷砂处理完毕的20mm×20mm×2mm尺寸的Al合金（A6061）板的表面形成厚度200μm的喷镀膜。将对得到的喷镀膜的耐等离子体侵蚀性进行评价的结果示于表1的“耐等离子体侵蚀性”栏。具体而言，首先使用平均粒径为0.06μm的胶体二氧化硅对各喷镀膜的表面进行镜面研磨，用聚酰亚胺带掩蔽研磨后的喷镀膜的表面的一部分。接着，在保持为133.3Pa（1000mTorr）的压力的平行平板型等离子体蚀刻装置的小室内，一边以1.055L/分钟（1055sccm）的流量供给将四氟化碳（CF4）、氩气和氧气按照95:950:10的体积比混合而成的蚀刻气体，一边施加20小时13.56MHz、1300W的高频电力，在这样的条件下对各喷镀膜进行等离子体蚀刻。其后，使用KLA-Tencor Corporation的高度差测定装置“Alpha-Step”测定掩蔽的部分和未掩蔽的部分之间的高度差的大小，并将测定的高度差的大小除以蚀刻时间，从而算出蚀刻速度。在“耐等离子体侵蚀性”栏中，“良”表示蚀刻速度相对于比较例1的情况的蚀刻速度的比值不足1.5，“不良”表示该比值为1.5以上。
将实施例1～5和比较例1～3的各喷镀用粉末在表2所示的喷镀条件下进行大气压等离子体喷镀，在设置在硅晶圆的周围使用的聚焦环的表面形成厚度200μm的喷镀膜。对于因等离子体侵蚀而从在各聚焦环上得到的喷镀膜产生并堆积在硅晶圆上的微粒数，将评价结果示于表1的“微粒数”栏。具体而言，首先，用研磨纸研磨各聚焦环上的喷镀膜的表面，直至表面粗糙度Ra为0.5μm以下。接着，将各聚焦环与硅晶圆一同放置在平行平板型等离子体蚀刻装置的小室内，将小室内的压力保持在133.3Pa，并以1.055L/分钟的流量向小室内供给将四氟化碳、氩气和氧气按照95:950:10的体积比混合而成的蚀刻气体，在该状态下施加20小时13.56MHz、1300W的高频电力，在这样的条件下对各硅晶圆进行等离子体蚀刻。其后，测定因等离子体侵蚀而从各聚焦环上的喷镀膜产生并堆积在硅晶圆上的微粒数。在“微粒数”栏中，“良”表示在将等离子体蚀刻的前后用KLA-Tencor Corporation的微粒计数器SurfscanSP3计数的、硅晶圆上的微粒数之差视为从聚焦环上的喷镀膜产生并堆积在硅晶圆上的微粒数时，微粒数相对于比较例1的情况的微粒数的比值不足1.0，“不良”表示该比值为1.0以上。
如上所述地对因等离子体侵蚀而产生并堆积在硅晶圆上的微粒数进行评价后，对相同硅晶圆的污染进行评价。将其结果示于表1的“污染”栏。具体而言，使用Agilent Technologies Inc.的ICP-MS装置即Agilent7700对清洗等离子体蚀刻后的硅晶圆之后的清洗液进行定量分析。在“污染”栏中，“良”表示各元素的检测浓度相对于比较例1的情况的钇（Y）的检测浓度的比值不足1.0，“不良”表示该比值为1.0以上。
表1的“风险”栏中示出各喷镀用粉末的原料供给风险、即原料的获取风险。喷镀用粉末中所包含的稀土元素氧化物的比率为95mol%以下时评价为“良”，其大于95mol%时评价为“不良”。
[表1]
Figure BDA0000481111540000121
[表2]
Figure BDA0000481111540000122

Claims (9)

1.一种喷镀用粉末，其包含稀土元素和周期表的第2族元素。
2.根据权利要求1所述的喷镀用粉末，其以氧化物的形态包含所述稀土元素和所述第2族元素。
3.根据权利要求1或2所述的喷镀用粉末，其还包含除稀土元素和第2族元素以外且除氧以外的元素作为稀释元素。
4.根据权利要求3所述的喷镀用粉末，其中，所述稀释元素为选自钛、锆、铪、钒、铌、钽、锌、硼、铝、镓、硅、钼、钨、锰、锗和磷中的一种以上的元素。
5.根据权利要求3或4所述的喷镀用粉末，其中，所述稀释元素为锆与除稀土元素和第2族元素以外且除氧和锆以外的一种以上的元素的组合。
6.根据权利要求4所述的喷镀用粉末，其以氧化物的形态包含所述稀释元素。
7.一种覆膜，其是将权利要求1～6中任一项所述的喷镀用粉末进行喷镀而得到的。
8.一种覆膜，其包含稀土元素和周期表的第2族元素。
9.一种构件，其在表面具备权利要求7或8所述的覆膜。
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