CN103855040B - 半导体芯片封装的导接线路的形成方法 - Google Patents
半导体芯片封装的导接线路的形成方法 Download PDFInfo
- Publication number
- CN103855040B CN103855040B CN201210514307.4A CN201210514307A CN103855040B CN 103855040 B CN103855040 B CN 103855040B CN 201210514307 A CN201210514307 A CN 201210514307A CN 103855040 B CN103855040 B CN 103855040B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000000126 substance Substances 0.000 claims abstract description 213
- 229910000679 solder Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 238000003384 imaging method Methods 0.000 claims abstract description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 18
- 239000004332 silver Substances 0.000 claims abstract description 18
- 238000007639 printing Methods 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 398
- 239000000758 substrate Substances 0.000 claims description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 238000007747 plating Methods 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 18
- 239000007792 gaseous phase Substances 0.000 claims description 17
- 238000004528 spin coating Methods 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 7
- 238000007493 shaping process Methods 0.000 claims description 2
- 238000012797 qualification Methods 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 description 18
- 238000009434 installation Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000011161 development Methods 0.000 description 6
- 238000004064 recycling Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002459 sustained effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010010 raising Methods 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210514307.4A CN103855040B (zh) | 2012-12-04 | 2012-12-04 | 半导体芯片封装的导接线路的形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210514307.4A CN103855040B (zh) | 2012-12-04 | 2012-12-04 | 半导体芯片封装的导接线路的形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103855040A CN103855040A (zh) | 2014-06-11 |
CN103855040B true CN103855040B (zh) | 2016-12-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210514307.4A Active CN103855040B (zh) | 2012-12-04 | 2012-12-04 | 半导体芯片封装的导接线路的形成方法 |
Country Status (1)
Country | Link |
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CN (1) | CN103855040B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6720664B1 (en) * | 2003-04-22 | 2004-04-13 | Tyntek Corporation | Submount-holder for flip chip package |
CN1767723A (zh) * | 2004-10-26 | 2006-05-03 | 赵建铭 | 半导体元件的封装体及其封装方法 |
CN101777542A (zh) * | 2009-01-14 | 2010-07-14 | 南茂科技股份有限公司 | 芯片封装构造以及封装方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3895570B2 (ja) * | 2000-12-28 | 2007-03-22 | 株式会社ルネサステクノロジ | 半導体装置 |
KR100486832B1 (ko) * | 2002-02-06 | 2005-05-03 | 삼성전자주식회사 | 반도체 칩과 적층 칩 패키지 및 그 제조 방법 |
-
2012
- 2012-12-04 CN CN201210514307.4A patent/CN103855040B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6720664B1 (en) * | 2003-04-22 | 2004-04-13 | Tyntek Corporation | Submount-holder for flip chip package |
CN1767723A (zh) * | 2004-10-26 | 2006-05-03 | 赵建铭 | 半导体元件的封装体及其封装方法 |
CN101777542A (zh) * | 2009-01-14 | 2010-07-14 | 南茂科技股份有限公司 | 芯片封装构造以及封装方法 |
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Publication number | Publication date |
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CN103855040A (zh) | 2014-06-11 |
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C06 | Publication | ||
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GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201209 Address after: Taoyuan County, Taiwan, China Patentee after: MAO BANG ELECTRONIC Co.,Ltd. Patentee after: XIAMEN MSSB TECHNOLOGY Co.,Ltd. Address before: Taoyuan County, Taiwan, China Patentee before: MAO BANG ELECTRONIC Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210809 Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: XIAMEN MSSB TECHNOLOGY Co.,Ltd. Address before: Taoyuan County, Taiwan, China Patentee before: MAO BANG ELECTRONIC Co.,Ltd. Patentee before: XIAMEN MSSB TECHNOLOGY Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: Jingwang Semiconductor (Xiamen) Co.,Ltd. Address before: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee before: XIAMEN MSSB TECHNOLOGY CO.,LTD. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230727 Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: Jingwang Semiconductor (Xiamen) Co.,Ltd. Patentee after: Jingwang Semiconductor (Shandong) Co.,Ltd. Address before: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee before: Jingwang Semiconductor (Xiamen) Co.,Ltd. |