CN103811369B - Copper connecting hole etching deficiency defect online detection method - Google Patents
Copper connecting hole etching deficiency defect online detection method Download PDFInfo
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- CN103811369B CN103811369B CN201310495436.8A CN201310495436A CN103811369B CN 103811369 B CN103811369 B CN 103811369B CN 201310495436 A CN201310495436 A CN 201310495436A CN 103811369 B CN103811369 B CN 103811369B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Abstract
The present invention relates to a kind of not enough defect online detection method of copper connecting hole etching, for detecting the not enough defect of copper connecting hole etching in cmos device preparation technology, comprise the steps: to scan region, many pieces of cmos device surfaces with e-beam scanners, detect each dark voltage contrast defect area, identified the classification of each dark voltage contrast defect simultaneously by failure analysis respectively, set up the corresponding relation of a dark voltage contrast defect classification and defect area gradation of image feature；Scan region, cmos device one surface to be detected with e-beam scanners, determining with or without dark voltage contrast defect area, if having, then extracting this defect area gradation of image feature；Identify according to corresponding relation whether this defect area is the not enough defect of copper connecting hole etching further；Switch to another region, surface continue to scan on.The method can quickly recognize the not enough defect of copper connecting hole that may be present etching in cmos device, and its recognition accuracy is high, detection speed is fast.
Description
Technical field
The present invention relates to field of semiconductor processing and manufacturing, more particularly, it relates to a kind of copper connecting hole etching
The online test method of not enough defect.
Background technology
In semiconducter process, the etching deficiency of copper connecting hole is killer's type defect in last part technology, with
The development of integrated circuit technology, cmos device critical size is scaled and the raising of depth-to-width ratio,
When cmos device accomplishes below 55nm, this defect is increasingly susceptible to.Inspection to this defect
Surveying, industry is normally applied e-beam scanners and carries out after etching terminates or copper planarization is ground.
On the one hand defect not enough for copper connecting hole etching, check by between strict technology after etching terminates
On the other hand time limit affects, and owing to not filling out copper in connecting hole, causes the letter of undercut bottom connecting hole
Number intensity is very limited so that the snatch rate of defect is the lowest, can not excellent at Wiring technology of actual response
Bad degree.And check after copper grinds, owing to having filled out copper in copper connecting hole so that scanning beam is believed
Number it is easier to feed back to the signal receiving end of scanning machine；But, now there is also more front layer work
The interference of skill defect, such as front layer copper disappearance, tungsten connecting hole etches not enough or works as layer copper lack of fill etc..
These kind defects, when being observed by e-beam scanners, all present dark voltage contrast (dark
Voltage contrast, is called for short DVC) feature.
All kinds of DVC defects are identified classification, and then screening copper connecting hole by failure analysis one by one
Defect that etching is not enough, to optimizing technique further, is the work wasted time and energy.
Therefore it provides one is by failure analysis, and quickly, high-accuracy ground detection copper connecting hole
Etching is not enough, and defect is the technical issues that need to address of the present invention.
Summary of the invention
It is an object of the invention to provide copper connecting hole etching deficiency in a kind of efficient detection cmos device to lack
The method fallen into.
For achieving the above object, technical scheme is as follows:
A kind of not enough defect online detection method of copper connecting hole etching, in cmos device preparation technology
Defect that middle detection copper connecting hole etching is not enough, comprises the steps: a), scans many with e-beam scanners
Piece region, cmos device surface, detects each dark voltage contrast defect area, simultaneously by losing efficacy point
Analysis identifies the classification of each dark voltage contrast defect respectively, sets up a dark voltage contrast defect classification and lacks
Fall into the corresponding relation of area image gray feature；Wherein, described dark voltage contrast defect classification is at least wrapped
Include the copper connecting hole not enough defect of etching, front layer copper articulamentum disappearance defect, when layer copper lack of fill defect,
Described gradation of image feature at least includes gray standard deviation scope, gray average scope, gray scale maximum model
Enclose, minimum gray value scope, lack defect according to the copper connecting hole not enough defect of etching with front layer copper articulamentum
And when layer copper lack of fill defect has the statistics of notable difference in gradation of image feature, pass through
They are made a distinction by described corresponding relation, thus arbitrary defect area are recognized accurately corresponding to which kind of
Dark voltage contrast defect；B), region, cmos device one surface to be detected is scanned with e-beam scanners,
Determining with or without dark voltage contrast defect area, if having, then extracting this defect area gradation of image feature；
C), according to corresponding relation identify whether this defect area is the not enough defect of copper connecting hole etching further, bag
Include according to defect area gray average and the relation of corresponding grey scale standard deviation or according to defect area gray scale
Maximum determines dark voltage contrast defect classification with the relation of corresponding grey scale minimum of a value；D), switch to
Another region, surface, returns to step b) and continues executing with.
Preferably, corresponding relation is a relational database, and its gradation of image recording each defect area is special
Levy and corresponding dark voltage contrast defect classification.
Preferably, corresponding relation is a functional relation, and it is by special to each defect area gradation of image
Levy and carry out adaptive learning algorithm with corresponding dark voltage contrast defect classification and obtain.
Preferably, the landing voltage of e-beam scanners is 500-1800eV, and electric current is 80-120nA.
The not enough defect online detection method of copper connecting hole etching that the present invention provides, according to e-beam scanners
Obtain gradation of image information, the gradation of image feature set up in advance by inquiry and DVC defect kind
Corresponding relation, can quickly recognize the not enough defect of copper connecting hole that may be present etching in cmos device, its
Recognition accuracy is high, detection speed is fast, it is simple to implement, it is easy to promote in semicon industry.
Accompanying drawing explanation
Fig. 1 illustrates that the not enough defect online detection method flow process of copper connecting hole etching of one embodiment of the invention is shown
It is intended to；
Fig. 2 A illustrates copper connecting hole etching not enough defect pattern and structure and morphology under e-beam scanners；
Fig. 2 B illustrates that front layer copper articulamentum lacks defect pattern and structure and morphology under e-beam scanners；
Fig. 3 A-3B illustrates that the relation according to defect area gray average with corresponding grey scale standard deviation determines
DVC defect classification；
Fig. 3 C-3D illustrates that the relation according to defect area gray scale maximum with corresponding grey scale minimum of a value determines
DVC defect classification.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the detailed description of the invention of the present invention is described in further detail.
The preparation technology of cmos device includes multiple processing step, such as, include but not limited to successively as
Lower processing step: Semiconductor substrate is provided；Form groove and active area；Metallization medium layer；Form ion
Hydrazine；Growing polycrystalline silicon grid；Form the first supporter；Form an ultra shallow PN junction；Form the second supporter；
Form deep PN junction；Deposition blocking layer of metal silicide；Form surface dielectric layer；Form contact hole；Copper
Planarization；And the technique such as on-line checking.This detection method is carried out at copper flatening process, can be considered
One processing step of line characterization processes, is carried out for the copper connecting hole of cmos device etches not enough defect
On-line checking.
As it is shown in figure 1, the not enough defect online detection method of copper connecting hole etching of one embodiment of the invention,
Comprise the steps:
Step S10, scan region, many pieces of cmos device surfaces with e-beam scanners, detect each secretly
Voltage contrast's defect area, identifies the class of each dark voltage contrast defect respectively simultaneously by failure analysis
Not, the corresponding relation of a dark voltage contrast defect classification and defect area gradation of image feature is set up.
In this step, arbitrarily choose many pieces of cmos devices, scan each piece with e-beam scanners respectively
Cmos device surface, and respectively each scan image is analyzed, it is judged that the most dark with or without gray scale
Region, if having, dark voltage contrast (DVC) defect area being i.e. defined as in the present invention, and right
DVC extracted region gray feature；Subsequently, these DVC defect areas are carried out one by one failure analysis, know
Not its classification.
Specifically, dark voltage contrast defect includes but not limited to following classification: copper connecting hole etching is not enough
Defect；Front layer copper articulamentum disappearance defect；When layer copper lack of fill defect.
As shown in Figure 2 A, front layer copper articulamentum lacks defect pattern to copper connecting hole etching deficiency defect pattern
As shown in Figure 2 B.
The gray feature of defect area includes but not limited to: gray standard deviation scope；Gray average scope；
Gray scale maximum range；Minimum gray value scope.
Subsequently, dark voltage contrast defect classification pass corresponding with defect area gradation of image feature is set up
System.
Specifically, this corresponding relation can be a relational database, and it records the image ash of each defect area
Degree feature and corresponding dark voltage contrast defect classification.By the inquiry to this relational database, can be straight
Obtain the DVC defect classification known corresponding to any image gray feature.
Or, this corresponding relation is a functional relation, and it is by special to each defect area gradation of image
Levy and carry out adaptive learning algorithm with corresponding dark voltage contrast defect classification and obtain.This self adaptation
Habit algorithm includes but not limited to: genetic algorithm；Neural network algorithm.
The one group of statistics obtained according to this embodiment, the defect that defect that copper connecting hole etching is not enough is corresponding
Area grayscale is characterized as: gray standard deviation scope: 0-15；Gray average scope: 0-42；Gray scale is maximum
Value scope: 0-65；Minimum gray value scope: 0-23；
The defect area gray feature that front layer copper articulamentum lacks defect corresponding is: gray standard deviation scope:
13-18；Gray average scope: 42-60；Gray scale maximum range: 65-85；Minimum gray value scope:
23-30；
The defect area gray feature corresponding when layer copper lack of fill defect is: gray standard deviation scope:
16-25；Gray average scope: 60-80；Gray scale maximum range: 85-120；Minimum gray value scope:
30-40。
By above statistics, copper connecting hole etching is not enough, and defect lacks with front layer copper articulamentum disappearance
Fall into and when layer copper lack of fill defect has obvious difference in gradation of image feature, pass through defect
The gradation of image feature in region and corresponding dark voltage contrast defect class relations database or self adaptation
Practise the functional relation that algorithm obtains, they can be made a distinction, thus arbitrary defect area is recognized accurately
Which kind of DVC defect territory corresponds to.
Step S11, with e-beam scanners scan region, cmos device one surface to be detected, determine and have
The defect area of contrast without dark voltage, if having, then extracts this defect area gradation of image feature.
Specifically, cmos device to be detected is still located on production line, pending subsequent technique；With electronics
Bundle scanner is chosen this region, cmos device one surface and is scanned, and obtains image, it is judged that wherein with or without
The region that gray scale is the most dark, i.e. dark voltage contrast defect area.
Step S12, identify that according to corresponding relation whether this defect area is that copper connecting hole etches not further
Foot defect.
Specifically, according to the corresponding relation set up in step S10, such as relational database or functional relationships
It is formula, by the defect area gradation of image feature obtained in step S11, can know correspondingly
The DVC defect classification of its correspondence.
Further, can determine according to the relation of defect area gray average with corresponding grey scale standard deviation
DVC defect classification, as shown in figs 3 a and 3b.
Similarly, it is also possible to come really according to the relation of defect area gray scale maximum with corresponding grey scale minimum of a value
Determine DVC defect classification, as shown in Fig. 3 C-3D.
Step S13, switch to another region, surface, return to step S11 and continue executing with.
Specifically, switch to the region, surface that cmos device one to be detected is new, return step S11
Proceed, until scanning through whole cmos device surface to be detected.
According to the different requirements of detection defect resolution, the sweep limits of e-beam scanners is 10-80nm,
Generally can use 50nm, i.e. every 50nm that cmos device upper surface is carried out single pass.
Under preferable case, according to embodiments of the invention, the landing voltage that e-beam scanners uses is
500-1800eV, electric current are 80-120nA；Brightness is 50～80, contrast is 40～70；Signal receives
Extra voltage is 1000～1500V.
Being appreciated that cmos device preparation technology includes multiple processing step, each processing step is existing
Can be combined in technology scope of disclosure replacing, if by set up in advance a DVC defect classification with
The corresponding relation of defect area gradation of image feature, and with cmos device defect area image to be detected ash
Degree feature is inquired about, thus identifies DVC defect classification, is regarded as thought based on the present invention
The deformation design made, should fall into protection scope of the present invention.
The above-described the preferred embodiments of the present invention that are only, described embodiment also is not used to limit the present invention
Scope of patent protection, the equivalent structure that the specification of the most every utilization present invention and accompanying drawing content are made
Change, in like manner should be included in protection scope of the present invention.
Claims (5)
1. the not enough defect online detection method of copper connecting hole etching, for preparing at cmos device
Technique detects the not enough defect of copper connecting hole etching, comprises the steps:
A), with e-beam scanners scan region, many pieces of cmos device surfaces, detect each dark voltage pair
Ratio degree defect area, is identified the classification of each dark voltage contrast defect simultaneously respectively, builds by failure analysis
A vertical dark voltage contrast defect classification and the corresponding relation of defect area gradation of image feature；Wherein, institute
State dark voltage contrast defect classification and at least include that the not enough defect of copper connecting hole etching, front layer copper connect break
Lose defect, when layer copper lack of fill defect, described gradation of image feature at least include gray standard deviation scope,
Gray average scope, gray scale maximum range, minimum gray value scope, according to copper connecting hole etching deficiency
Defect and front layer copper articulamentum lack defect and when layer copper lack of fill defect has in gradation of image feature
There is the statistics of notable difference, by described corresponding relation, they are made a distinction, thus accurately identify
Go out arbitrary defect area corresponding to which kind of dark voltage contrast defect；
B), scan region, cmos device one surface to be detected with e-beam scanners, determine with or without dark electricity
Pressure contrast defect area, if having, then extracts this defect area gradation of image feature；
C), identify whether this defect area is copper connecting hole etching deficiency further according to described corresponding relation
Defect, including the relation according to defect area gray average and corresponding grey scale standard deviation or according to defect
Area grayscale maximum determines dark voltage contrast defect classification with the relation of corresponding grey scale minimum of a value；
D), switch to another region, described surface, return to described step b) and continue executing with.
2. the method for claim 1, it is characterised in that described corresponding relation is a pass coefficient
According to storehouse, its gradation of image feature recording each defect area and corresponding dark voltage contrast defect classification.
3. the method for claim 1, it is characterised in that described corresponding relation is a functional relationships
Being formula, it is by each defect area gradation of image feature and corresponding dark voltage contrast defect classification
Carry out adaptive learning algorithm and obtain.
4. method as claimed any one in claims 1 to 3, it is characterised in that described electron beam
The landing voltage of scanner is 500-1800eV, and electric current is 80-120nA.
5. method as claimed any one in claims 1 to 3, it is characterised in that described CMOS
Device preparation technology at least includes copper flatening process, and described detection method is laggard copper flatening process
OK.
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| CN104201130B (en) * | 2014-09-01 | 2017-10-03 | 上海华力微电子有限公司 | A kind of optical detecting method classified for defect |
| CN106505005B (en) * | 2016-10-10 | 2019-05-14 | 上海华力微电子有限公司 | A kind of detection method connecting hole pattern light shield disadvantage |
| CN106908713B (en) * | 2017-02-23 | 2019-10-22 | 深圳崇达多层线路板有限公司 | A kind of determination method of wiring board internal layer circuit short circuit reason |
| KR102409943B1 (en) * | 2017-11-29 | 2022-06-16 | 삼성전자주식회사 | Method of detecting a defect and apparatus for performing the same |
| CN111626999B (en) * | 2020-05-22 | 2022-06-10 | 广东电网有限责任公司 | Patch capacitor failure detection method and grinding and polishing method |
| CN112241699A (en) * | 2020-10-13 | 2021-01-19 | 无锡先导智能装备股份有限公司 | Object defect category identification method and device, computer equipment and storage medium |
| CN114723647A (en) * | 2020-12-18 | 2022-07-08 | 东方晶源微电子科技（北京）有限公司 | Defect classification method and device, equipment and storage medium |
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