CN104201130B - A kind of optical detecting method classified for defect - Google Patents
A kind of optical detecting method classified for defect Download PDFInfo
- Publication number
- CN104201130B CN104201130B CN201410441473.5A CN201410441473A CN104201130B CN 104201130 B CN104201130 B CN 104201130B CN 201410441473 A CN201410441473 A CN 201410441473A CN 104201130 B CN104201130 B CN 104201130B
- Authority
- CN
- China
- Prior art keywords
- defect
- gtg
- optical
- grid
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention relates to technical field of integrated circuits, particularly with regard to a kind of optical detecting method classified for defect, by the flaw detection sensitivity for setting a suitable defect detection equipment, and the optical defect detection device is called to the grid after GTG and mark, active area and oxide layer isolated area carry out defects detection, and judge defect in the upper corresponding position of static memory while being classified positioned at different degrees of GTG according to defect, therefore, online optical defect detection can carry out accurate comprehensively classification according to position of the defect above static memory, the genetic analysis band of research and defect so as to the failure mode to device great convenience.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly with regard to a kind of optical detection side classified for defect
Method.
Background technology
In existing technical field, the process that the manufacture crafts of a chips usually contains hundreds of steps, main technique
Module can be divided into the several majors such as photoetching, etching, ion implanting, film growth and cleaning.With the hair of integrated circuit technology
Exhibition and the continuous diminution of characteristic size, the distribution of on-chip circuitry are also become increasingly complex, and the slight errors of any link will all be led
The failure of whole product is caused, so the requirement to technology controlling and process is just more and more stricter.In order to timely find lacking for product
Fall into, highly sensitive optical defect detection device is typically equipped with actual production process online inspection is carried out to product
Survey, the basic functional principle that optical defect detection device carries out defects detection is that the electronic image on chip is converted into by difference
The GTG image that bright dull gray rank represents, as shown in Figure 1 is converted into GTG by the image obtained under a light microscope
The process of image is Fig. 1 a~Fig. 1 c, is then compared by the GTG characteristics of image on two adjacent chips, and examine
Measure and occur abnormal defect position on chip, it is specific to the pattern of the defect and position finally by electron microscope
Analysis.The region most sensitive to defect is the density of static memory as shown in Figure 2, as can be seen from Fig. its circuit on chip
It is very high, and it is in be repeated cyclically arrangement to be distributed, and can be by it according to the material and graphic feature of static memory
It is divided into grid 1, active area 2 and oxide layer isolated area 3.On the one hand, when defect respectively be located at the corresponding above-mentioned grid 1 of device,
The influence of its electric property final to chip is not during 3 corresponding position (as shown in Figure 3) of active area 2 and oxide layer isolated area
With, for example：If defect is located at oxide layer isolated area 3, its performance impact to device is limited；If defect is located at grid 1,
The defect is likely to result in the failure of device unlatching.On the other hand, position distribution of the defect on device can also point to defect shape
Into different reasons, if defect is only distributed on grid 1, then may be relevant with the definition process of gate patterns, if so
Online optical defect detection is capable of detecting when defect in static memory position corresponding above and progress is accurate and comprehensive
Classification, it is possible to which the reason for being formed to the failure mode and defect of device brings great convenience, and has been greatly reduced production
The cost of technique.
Chinese patent (CN103529041A) discloses a kind of circuit board newness degree decision method based on characteristics of image
And system, belong to technical field of circuit board detection.The decision method comprises the following steps：The image of collecting circuit board, extracts figure
Feature as in, and this feature is classified；And carried out pair with the standard feature in the statistical nature database that pre-establishes
Than determining its new and old coefficient；Using the new and old coefficient and weight coefficient of the feature, new and old coefficient of determination is drawn；This is new and old
Coefficient of determination is compared with preset value, draws newness degree result of determination.
Above-mentioned patent quickly sets up the new and old synthetic determination mould of circuit board components by the statistic of classification to image feature amount
Type, can realize automatic, convenient, quick, the accurate inspection of circuit board newness degree, can be widely applied to the inspection of circuit board components
Survey in work, but the patent carries out new and old contrast merely by graphic feature, and the defective locations of device are not carried out
Positioning and classification, it is impossible to which failure mode and defect cause to device are analyzed.
The content of the invention
In view of the above problems, the present invention provides a kind of optical detecting method classified for defect, is solved by this method
The defective locations of device are not positioned and classified, and then the failure mode and defect cause of device can not be divided
The defect of analysis.
The present invention solve the technical scheme that is used of above-mentioned technical problem for：
A kind of optical detecting method classified for defect, wherein, methods described includes：
Step S1, provide one there is the wafer to be measured of integrated circuit diagram, the integrated circuit diagram includes grid, active
Area and oxide layer isolated area；
Step S2, call a detection device to obtain the electronic image of the integrated circuit diagram, and to grid, active area and
Oxide layer isolated area is identified；
Step S3, the GTG image for calling the optical defect detection device acquisition integrated circuit diagram, and according to
Electronic image after mark is identified to the grid of GTG, active area and oxide layer isolated area；
Step S4, continue with grid, active area and the oxide layer of optical defect detection device detection GTG every
Classified from defect present in area, and to defect.
Preferably, above-mentioned is used for the optical detecting method that defect is classified, wherein, provided with quiet in the integrated circuit diagram
State memory circuitry.
Preferably, above-mentioned is used for the optical detecting method that defect is classified, wherein, by the oxide layer isolated area to phase
Adjacent active area is isolated.
Preferably, above-mentioned is used for the optical detecting method that defect is classified, wherein, in step S3, obtain the integrated electricity
After the GTG image of road domain, the grid, active area are different with the GTG degree of oxide layer isolated area.
Preferably, above-mentioned is used for the optical detecting method that defect is classified, wherein, in step S4, lacked using the optics
Fall into before detection device detection defect, include the flaw detection sensitivity of the setting optical defect detection device.
Preferably, above-mentioned is used for the optical detecting method that defect is classified, wherein, call the optical defect detection device
And the defect in grid, active area and oxide layer isolated area described in suitable defects detection Sensitive Detection is set, make its apparent
Detect and identify that defect is located at corresponding structure in different GTG degree, and then statistic of classification is carried out to defect.
Preferably, above-mentioned is used for the optical detecting method that defect is classified, wherein, the detection device is an electron microscopic
Mirror.
Above-mentioned technical proposal has the following advantages that or beneficial effect：
A kind of optical detecting method classified for defect disclosed by the invention, is set by setting a suitable defects detection
Standby flaw detection sensitivity, and call the optical defect detection device to GTG and mark after grid, active area and
Oxide layer isolated area carries out defects detection, and judges defect in the upper of static memory positioned at different degrees of GTG according to defect
Corresponding position is classified simultaneously, therefore, and online optical defect detection can be according to defect above static memory
Position carry out accurate comprehensively classification, the genetic analysis band of research and defect so as to the failure mode to device pole
Big facility.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, the present invention and its feature, outside
Shape and advantage will become more apparent upon.Identical mark indicates that identical part is not painted proportionally deliberately in whole accompanying drawings
Accompanying drawing processed, it is preferred that emphasis is show the purport of the present invention.
Fig. 1 a~1c is that electronic image is converted to GTG image schematic diagram in the prior art；
Fig. 2 is the design circuit diagram of static memory in the prior art；
Fig. 3 is that defect is located at the design circuit diagram on static memory in the prior art；
Fig. 4 is the electronic image schematic diagram of static memory in the embodiment of the present invention；
Fig. 5 is the GTG image schematic diagram of static memory in the embodiment of the present invention；
Fig. 6 is the defect distribution schematic diagram of static memory in the embodiment of the present invention；
Fig. 7 a and Fig. 7 b are the defect distribution schematic diagrames of static memory in the embodiment of the present invention；
Fig. 8 is the defects count distribution map on static memory in the embodiment of the present invention；
Fig. 9 a~9c is defects detection principle schematic in the embodiment of the present invention.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
It can be carried out for online optical defect detection according to position of the defect above static memory accurate comprehensive
Classification, be easy to the research to the failure mode of device and the genetic analysis of defect, the invention provides one kind for defect point
The optical detecting method of class, specifically as shown in Fig. 4~9c：
In a kind of optional but non-limiting embodiment, one is provided first and prepares the crystalline substance to be measured for having integrated circuit diagram
Circle, the current densities of the integrated circuit diagram are higher, the distribution to device in the defect more sensitive and integrated circuit diagram
In periodic repeated arrangement.
In an embodiment of the present invention, it is designed with static memory circuit in the integrated circuit diagram；And deposited according to static state
The material of reservoir and the figure structure that to be classified as three kinds different, i.e.,：Grid 1, active area 2 and oxide layer isolated area 3.
Secondly, the static memory in the wafer to be measured is detected using a detection device, to the figure of the static memory
Structure is analyzed, and specifically above-mentioned grid 1, active area 2 and oxide layer isolated area 3 are analyzed, and is obtained the static state and deposited
The electronic image of reservoir, as shown in figure 4, the electronic image corresponds to graphic structure (the i.e. electronic image of the static memory
Correspondence includes above-mentioned grid 1, active area 2 and oxide layer isolated area 3) while carrying out the mark in structure to the electronic image, i.e.,
Grid 1, active area 2 and oxide layer isolated area 3 are identified, the relevant position of static memory is made it correspond to.
In an embodiment of the present invention, the detection device is preferably an electron microscope.
In a kind of optional but non-limiting embodiment, further, static memory design circuit will be included
Wafer to be measured pass on an optical defect detection device (wherein, set the flaw detection sensitivity of the optical defect detection device,
The optical defect detection sensitivity is easy to what is become apparent from follow-up defects detection flow to detect respectively positioned at grid 1 have
Defect in source region 2, and oxide layer isolated area 3, and further the different structure according to residing for the defect is divided defect
Class), specifically, calling the static memory region of the detection light source detection of the optical defect detection device wafer, obtain simultaneously
Take the GTG image of the static memory；Wherein, the GTG image includes three kinds of different degrees of gray-scale areas, is specially
Light tone GTG, grey GTG and black grey scale, and different degrees of GTG represents the different structure of static memory, such as Fig. 5
It is shown.
Then, according to the GTG degree of the electronic image after the completion of mark and the GTG image of static memory to this
The GTG picture structure of static memory is that grid 1, active area 2 and oxide layer isolated area 3 are identified, the static state after mark
The correspondence of grid 1 is light tone GTG in the GTG image of memory, and the correspondence of active area 2 is grey GTG, oxide layer isolation
The correspondence of area 3 is black grey scale.
Finally, as shown in fig. 6, calling the optical defect detection device to detect static memory after the completion of above-mentioned mark
GTG image, the identification that defect is carried out to the GTG image is classified simultaneously；Wherein, optical defect detection is called to set
It is standby when carrying out defects detection to the static memory, because by grid 1, active area 2 and the figure of oxide layer isolated area 3 and material
Influence, the optical defect detection device can't completely detect all defect of the static memory, for example：On grid 1
Because the influence of crystal grain causes its background noise very strong, defect detection equipment is higher in defect recognition difficulty thereon, if should
The flaw detection sensitivity set on optical defect detection device is according on the basis of the relatively low standard of active area 2, then swept
Many defects will be produced during retouching detection, therefore higher flaw detection sensitivity can be set to it and filter out background
Noise, it is possible to obtain a defect map for being easier to identification, as shown in figs. 7 a and 7b.That is in optical defect
Need to set suitable flaw detection sensitivity on detection device and be entirely clear it and detect and identify and be located at respectively
The defect of grid 1, active area 2 and oxide layer isolated area 3, and further carry out the classification of defect, such as Fig. 8.
In an embodiment of the present invention, by the GTG of the static memory after the completion of mark on optical defect detection device
When changing image progress defect recognition, corresponding light tone ash is distinguished by being respectively compared grid 1, active area 2 and oxide layer isolated area 3
The characteristics of image of rank, grey GTG and black grey scale, you can detect abnormal position place occur.For example, comparing 1 pair of grid
The characteristics of image for the light tone GTG answered：Pass through relatively any light tone GTG and two light tones with the light tone GTG arbitrary neighborhood
The characteristics of image of GTG, such as Fig. 9 a~Fig. 9 c, are expressed as adjacent 3 grids 1 corresponding light tone GTG A, B, C, to three
After individual adjacent light tone GTG is detected, the position of detection data difference is drawn by B and A comparison, then passes through B and C
Compare the position for drawing signal difference, then the same position of otherness is exactly to be detected on B in the two comparing results
The position of defect, and the defect is in the structure of grid 1.And so on, further detect the grid of the static memory
Pole 1, active area 2, the particular location of all defect of oxide layer isolated area 3 and respective numbers, and detected by the optical defect
Equipment is classified and quantity statistics to defect.
Therefore, the detection of online optical defect can carry out accurate complete according to position of the defect above static memory
The classification in face, so as to the genetic analysis band great convenience of the research to component failure pattern and defect.
In summary, it is suitable by setting one the invention discloses a kind of optical detecting method classified for defect
The flaw detection sensitivity of optical defect detection device, and call the optical defect detection device to GTG and mark after
Grid, active area and oxide layer isolated area carry out defects detection, and judge that defect exists positioned at different degrees of GTG according to defect
The upper corresponding position of static memory is classified simultaneously, therefore, and online optical defect detection can be according to defect quiet
Position above state memory carries out accurate comprehensively classification, the research and defect so as to the failure mode to device
Genetic analysis band great convenience.
By explanation and accompanying drawing, the exemplary embodiments of the specific structure of embodiment are given, based on the present invention
Spirit, can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not made
For limitation.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, wherein the equipment and structure be not described in detail to the greatest extent are construed as giving reality with the common mode in this area
Apply；Any those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above
Methods and techniques content make many possible variations and modification to technical solution of the present invention, or be revised as equivalent variations etc.
Embodiment is imitated, this has no effect on the substantive content of the present invention.Therefore, every content without departing from technical solution of the present invention, foundation
The technical spirit of the present invention still falls within the present invention to any simple modifications, equivalents, and modifications made for any of the above embodiments
In the range of technical scheme protection.
Claims (4)
1. a kind of optical detecting method classified for defect, it is characterised in that methods described includes：
Step S1, provide one have integrated circuit diagram wafer to be measured, the integrated circuit diagram include grid, active area and
Oxide layer isolated area；
Step S2, the electronic image for calling the detection device acquisition integrated circuit diagram, and to grid, active area and oxidation
Layer isolated area is identified；
Step S3, the GTG image for calling the optical defect detection device acquisition integrated circuit diagram, and according to mark
Electronic image afterwards is identified to the grid of GTG, active area and oxide layer isolated area；
Step S4, grid, active area and the oxide layer isolated area for continuing with the optical defect detection device detection GTG
Present in defect, and defect is classified；
Wherein, the GTG image includes three kinds of different degrees of gray-scale areas, specially light tone GTG, grey GTG and black
Color GTG；In step S3, after the GTG image for obtaining the integrated circuit diagram, the grid, active area and oxide layer every
GTG degree from area is different；In step S4, before optical defect detection device detection defect, in addition to setting institute
State the flaw detection sensitivity of optical defect detection device；Call the optical defect detection device and set suitable defect inspection
The defect surveyed in grid, active area and oxide layer isolated area described in sensitivity technique, makes its apparent detection and identifies defect
The corresponding structure in different GTG degree, and then statistic of classification is carried out to defect.
2. the optical detecting method classified as claimed in claim 1 for defect, it is characterised in that the integrated circuit diagram
In be provided with static memory circuit.
3. as claimed in claim 1 for defect classify optical detecting method, it is characterised in that by the oxide layer every
Adjacent active area is isolated from area.
4. the optical detecting method classified as claimed in claim 1 for defect, it is characterised in that the detection device is one
Electron microscope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410441473.5A CN104201130B (en) | 2014-09-01 | 2014-09-01 | A kind of optical detecting method classified for defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410441473.5A CN104201130B (en) | 2014-09-01 | 2014-09-01 | A kind of optical detecting method classified for defect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104201130A CN104201130A (en) | 2014-12-10 |
| CN104201130B true CN104201130B (en) | 2017-10-03 |
Family
ID=52086403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410441473.5A Active CN104201130B (en) | 2014-09-01 | 2014-09-01 | A kind of optical detecting method classified for defect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104201130B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11579184B2 (en) | 2017-11-27 | 2023-02-14 | Hamamatsu Photonics K.K. | Analysis method, analysis device, analysis program, and recording medium for recording analysis program |
| CN110969175B (en) * | 2018-09-29 | 2022-04-12 | 长鑫存储技术有限公司 | Wafer processing method and device, storage medium and electronic equipment |
| CN109560000B (en) * | 2018-11-30 | 2020-08-25 | 上海华力微电子有限公司 | Wafer defect scanning method |
| CN109817540B (en) * | 2019-01-30 | 2021-06-08 | 上海华虹宏力半导体制造有限公司 | Wafer detection defect classification method |
| CN112086373A (en) * | 2019-06-13 | 2020-12-15 | 芯恩（青岛）集成电路有限公司 | Wafer defect detection method |
| CN110299298A (en) * | 2019-06-25 | 2019-10-01 | 德淮半导体有限公司 | Wafer defect scan method and system, fault detection board |
| CN112461838B (en) * | 2019-09-09 | 2023-03-10 | 芯恩（青岛）集成电路有限公司 | Wafer defect detection device and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719477A (en) * | 2008-10-09 | 2010-06-02 | 联华电子股份有限公司 | Alignment mark and defect detection method |
| CN103529041A (en) * | 2013-10-31 | 2014-01-22 | 广州华工机动车检测技术有限公司 | Method and system for judging newness degree of circuit board on basis of image features |
| CN103606529A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Method and device for improving defect classification accuracy |
| CN103811369A (en) * | 2013-10-21 | 2014-05-21 | 上海华力微电子有限公司 | Online detection method of insufficient etching defect of copper connecting holes |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5537282B2 (en) * | 2009-09-28 | 2014-07-02 | 株式会社日立ハイテクノロジーズ | Defect inspection apparatus and defect inspection method |
-
2014
- 2014-09-01 CN CN201410441473.5A patent/CN104201130B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719477A (en) * | 2008-10-09 | 2010-06-02 | 联华电子股份有限公司 | Alignment mark and defect detection method |
| CN103811369A (en) * | 2013-10-21 | 2014-05-21 | 上海华力微电子有限公司 | Online detection method of insufficient etching defect of copper connecting holes |
| CN103606529A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Method and device for improving defect classification accuracy |
| CN103529041A (en) * | 2013-10-31 | 2014-01-22 | 广州华工机动车检测技术有限公司 | Method and system for judging newness degree of circuit board on basis of image features |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104201130A (en) | 2014-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104201130B (en) | A kind of optical detecting method classified for defect | |
| KR101600209B1 (en) | Region setting device, inspection device, region setting method, and inspection method using region setting method | |
| CN109558620B (en) | Method for generating inspection plan and system thereof | |
| KR102388365B1 (en) | Method of defect detection on a specimen and system thereof | |
| JP4095860B2 (en) | Defect inspection method and apparatus | |
| KR102132328B1 (en) | Defect classification using cad-based context attributes | |
| CN104916559B (en) | The position failure method for detecting of binding entity coordinate | |
| CN108463875A (en) | The flaw sensitivity of semiconductor wafer verifier is improved using the design data with wafer images data | |
| JP2010535430A (en) | Semiconductor device feature extraction, generation, visualization, and monitoring methods | |
| CN104008550A (en) | Wafer surface defect feature analysis method and system and wafer surface detect feature classification method and system | |
| JP2002100660A (en) | Defect detecting method, defect observing method and defect detecting apparatus | |
| JP2010514226A (en) | Inspection recipe creation system and method | |
| US10545490B2 (en) | Method of inspecting a specimen and system thereof | |
| KR101372995B1 (en) | Defect Inspection Method | |
| TW201511156A (en) | Setting up a wafer inspection process using programmed defects | |
| US20190026419A1 (en) | Method and system for quickly diagnosing, classifying, and sampling in-line defects based on caa pre-diagnosis database | |
| CN104122272A (en) | Optical detection method for defects of semiconductor devices | |
| KR20210105335A (en) | Classification of defects in semiconductor specimens | |
| Demant et al. | Analysis of luminescence images applying pattern recognition techniques | |
| JP2007188968A (en) | Analysis method and analysis program of wafer map data | |
| US20090273669A1 (en) | Method and system for detecting critical defects | |
| US6539272B1 (en) | Electric device inspection method and electric device inspection system | |
| KR102367310B1 (en) | Method of classifying defects in a semiconductor specimen and system thereof | |
| KR102380099B1 (en) | Range-Based Real-Time Scanning Electron Microscopy Non-Visual Wiener | |
| US7855088B2 (en) | Method for manufacturing integrated circuits by guardbanding die regions |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |