CN103806092A - Reactor for hydride vapour phase epitaxy (HVPE) - Google Patents
Reactor for hydride vapour phase epitaxy (HVPE) Download PDFInfo
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- CN103806092A CN103806092A CN201410031343.4A CN201410031343A CN103806092A CN 103806092 A CN103806092 A CN 103806092A CN 201410031343 A CN201410031343 A CN 201410031343A CN 103806092 A CN103806092 A CN 103806092A
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Abstract
The invention discloses a reactor for vertical hydride vapour phase epitaxy (HVPE), which comprises an axisymmetric cylindrical cavity, a precursor channel, a substrate, a graphite disc and a support bar, wherein the precursor channel, from top to bottom, is sequentially composed of a first cylinder, a transition section, a second cylinder, a skirt extension section and a third cylinder; the reactor also comprises a second rectifying plate and a first baffling device, wherein the second rectifying plate is arranged at the central position of the second cylinder, and the first baffling device is arranged in the third cylinder and provided with a circumferential array baffling plate; or the reactor also comprises first, second and third rectifying plates and a second baffling device, wherein the first, second and third rectifying plates are respectively arranged in the first, second and third cylinders of the channel, and the second baffling device is arranged at the radial periphery of the graphite disc; or the reactor also comprises a part for carrying out radial expansion on the outer wall of a reactive cavity; or the reactor comprises first and second rectifying plates, first and second baffling devices, and a radial outlet for reaction gas, wherein the first and second rectifying plates are arranged in the first and second cylinders, and the first and second baffling devices are arranged in the third cylinder and connected with the radial periphery of the graphite disc.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to one for the preparation of semiconductor material gas-phase epitaxy apparatus, particularly a kind of reactor for hydride gas-phase epitaxy (HVPE).
Background technology
Vapour phase epitaxy (VPE) technology is widely used in growing semiconductor crystals material, hydride gas-phase epitaxy (HVPE) technology wherein has the features such as fast growth, production cost be low, be highly suitable for the growth of III hi-nitride semiconductor material, the growth of for example gan (GaN) film or thick film.In HVPE growing system, halogenide and III family metal reaction generate one of precursor such as III family halogenide, and this precursor reacts with another precursor such as nitrogenous gas subsequently and generates III group-III nitride.In order to obtain high-quality gallium nitride thick film, be desirably at the bottom of hvpe reactor chamber liner and obtain being uniformly distributed of reactant concn on effective deposition regions territory, because the homogeneity that reactant concn distributes directly affects growth quality and the cost of semiconducter device, and then affects the competitive power of semiconducter device in market.
Traditional hydride gas-phase epitaxy (HVPE) is with reactor take Horizontal type as main, and wherein substrate is placed in conventionally in the back up pad of certain angle, and nozzle structure is generally the round nozzle along horizontal or vertical direction.Precursor Flow Field Distribution under this air intake structure, no matter all undesirable in the circumferential or radial distribution of substrate, be not suitable for the growth of GaN thick film.
Existing hydride gas-phase epitaxy (HVPE) growing system, vertical (or inverted) reactor of conventional rotational symmetry cylinder shape, the wherein circular or donut structure of sprinkler design, this structure is because graphite plate drives substrate rotation, make the circumferential distribution of reactant easily even compared with horizontal system, and the circumferential homogeneity of growth obtain improvement to a certain extent and then improve growing crystal quality.But the problem that the reactor of this structure exists is: under donut shower nozzle, reactant distributes at the radial flow fields in substrate surface effective deposition regions territory, its annulus region intermediate is high, both sides are low, and radial flow fields under circular shower nozzle distributes, its circle centre position is high, outside low subtracting, and is unimodality; As for the circumferential homogeneity of growth wafer, although drive substrate rotation to be improved by graphite plate, but bring many problems simultaneously, as: first, make graphite plate rotation need power source motor, transferring power turning axle and other attachment components, make device complexity, energy consumption increases, safeguards inconvenience; Secondly, turning axle keeps well sealing to be difficult for the vacuum environment maintaining in reactor under rotary state, and more important point is difficult in graphite plate rotary course guarantee that the shake of substrate does not produce detrimentally affect to wafer growth quality.
For the foregoing reasons, in order to improve the growth thickness of nitride semi-conductor material and the homogeneity of component thereof, need to simplify and optimize reactor assembly.
Summary of the invention
Object of the present invention, aim to provide a kind of gas-phase epitaxy apparatus of preparing semiconductor material, a kind of reactor for hydride gas-phase epitaxy (HVPE) more specifically, to solve in existing HVPE rotational symmetry cylindrical reactor, semiconductor material growing thickness and component problem of non-uniform thereof, and simplification device.
For reaching above-mentioned purpose of the present invention, will be achieved through the following technical solutions:
In existing vertical or inverted hydride gas-phase epitaxy (HVPE) system, there is the cowling panel of different pore size manhole the different section settings of round tube type precursor passage, make being evenly distributed of precursor gas; There is the arrange baffle means of baffle of circumferential array peripheral setting of precursor passage the 3rd cylinder interior or graphite plate, to form a kind of centrifugal eddy flow that declines in substrate surface effective deposition regions territory, thereby remove graphite plate rotation power source motor and the attachment component in existing HVPE system.
Specifically, a kind of reactor for hydride gas-phase epitaxy (HVPE), comprise reaction chamber, precursor passage, graphite plate, substrate slice, graphite plate support bar etc., wherein in precursor passage the second cylinder, be provided with cowling panel, baffle means is set in precursor passage the 3rd cylinder; The cowling panel with different pore size manhole is wherein set in precursor passage first, second, third cylinder, in graphite plate radial outer periphery, baffle means is set; And the cowling panel with different pore size manhole is set in first, second, third cylinder of precursor passage, be provided with baffle means in graphite plate radial outer periphery, and cavity reaction chamber has been carried out to radial expansion; Wherein in first, second cylinder of precursor passage, be provided with the cowling panel of different pore size size manhole, in the 3rd cylinder, be provided with baffle means with graphite plate periphery, and when cavity reaction chamber is carried out to radial expansion, reaction gas outlet is adopted to radially outlet design.
Above three kinds of cowling panels and two kinds of baffle means both can be implemented separately, also can the two above Joint Implementation, the present invention has following advantage for the reactor of hydride gas-phase epitaxy (HVPE): first, this reactor has removed graphite boat rotation power source motor and attachment component in existing HVPE system, not only simplification device greatly, energy efficient, maintains easily, and has also eliminated the disadvantageous effect of graphite plate rotational instability for substrate surface institute growing crystal thickness and component uniformity; Secondly, structure of reactor of the present invention can form the micro-eddy flow of centrifugal reactant on substrate surface effective deposition regions territory, greatly improves crystal growth thickness and component uniformity.
Below in conjunction with drawings and Examples, the present invention is further described.
Accompanying drawing explanation
Figure 1A is the structure of reactor sectional view of one provided by the invention for hydride gas-phase epitaxy (HVPE), wherein: Figure 1B is cowling panel structural representation; Fig. 1 C is a kind of baffle means structural representation with circumferential array traverse baffle.
Fig. 2 A is the structure of reactor sectional view of one provided by the invention for hydride gas-phase epitaxy (HVPE), wherein: Fig. 2 B is a kind of baffle means structural representation with circumferential array traverse baffle.
Fig. 3 is that one provided by the invention is used structure of reactor sectional view for hydride gas-phase epitaxy (HVPE), wherein reactor chamber has been carried out radially expanding.
Fig. 4 is the structure of reactor sectional view of one provided by the invention for hydride gas-phase epitaxy (HVPE), wherein reaction gas outlet is adopted to radially outlet design.
Embodiment
In order to make the object, technical solutions and advantages of the present invention more cheer and bright, for several embodiment, the invention will be further described:
embodiment mono-
As shown in Figure 1A, in vertical hydrogenation thing vapour phase epitaxy (HVPE) growing system, reactor comprises rotational symmetry cylinder shape cavity 1, precursor passage 2, graphite disk 3, substrate 4 and support bar 5, described precursor passage 2 is followed successively by the first cylinder, transition section, the second cylinder, skirt body expanding section and the 3rd cylinder from top to bottom, wherein the second drum diameter is greater than the first drum diameter, and the 3rd drum diameter is greater than the second drum diameter, in this precursor passage 2, the second cylinder interior is provided with cowling panel, and as shown in Figure 1B, described cowling panel upper and lower surface is run through by manhole, and at least more than one is equal diameter through hole for this manhole, in described precursor passage 2, the 3rd cylinder interior is provided with polylith traverse baffle, and as shown in Figure 1 C, described traverse baffle is embedded in the 3rd cylinder inner surface in precursor passage 2, is circumferential array and arranges, and forms the first baffle means, precursor gas enters by precursor passage 2 tops, shielding gas enters between precursor passage 2 and cavity 1, precursor gas is in passage 2 in the second cylinder under the rectifying action of cowling panel (Figure 1B), precursor distributes relatively more even, then the expansion effect of process skirt body section, the useful area that precursor distributes expands gradually, extend to baffle means in precursor passage 2 (Fig. 1 C) top always, arrange under the baffling effect of traverse baffle through thering is circumferential permutation again, precursor gas produces a kind of centrifugal micro-eddy flow, precursor gas is uniformly distributed on the substrate surface effective deposition regions territory 4 on graphite plate 3, final growth thickness and the uniform nitride semiconductor wafer of component of obtaining.
embodiment bis-
As shown in Figure 2 A, reactor is arranged in a vertical HVPE growing system, and described reactor is made up of cavity 1, precursor passage 2, graphite plate 3, substrate 4, support bar 5.Described precursor passage 2 forms by five sections, be followed successively by from top to bottom the first cylinder, transition section, the second cylinder, skirt body expanding section, the 3rd cylinder, each drum diameter increases from top to bottom successively, and every cylindrical section inside is provided with cowling panel, is respectively first, second, third cowling panel; Described cowling panel upper and lower surface is run through by a plurality of manholes, at least comprises more than one equal diameter manhole on this cowling panel, and on each cowling panel, through-hole aperture size is successively decreased from top to bottom successively.Precursor gas is injected from precursor passage 2 tops, the rectifying action of three cowling panels that reduce successively under the expansion effect of the second cylinder and skirt body section and through through-hole aperture, and the effective depositional area of settling constantly expands, and it is further even that air inlet becomes.As shown in Figure 2 A, be provided with a baffler (Fig. 2 B) in graphite plate 3 radial outer periphery, graphite plate 3 is supported by support bar 5, the traverse baffle that described baffle means is arranged by an annular bottom plate and a plurality of circumferential array forms, the effective deposition regions territory of substrate wafer 4 is positioned at the positive middle and lower part of baffle means base plate, under the baffling effect of baffle means, make reactant gas form a kind of centrifugal eddy flow that declines in substrate surface effective deposition regions territory, finally make nitride semi-conductor material growth thickness and component more even.
embodiment tri-
As shown in Figure 3, in the present embodiment, structure of reactor is except cavity 1, and other structures are consistent with structure of reactor in embodiment bis-, and precursor gas all adopts the inlet, outlet mode of upper entering and lower leaving.Unique variation be that reaction chamber place cavity in reactor has been carried out radially expanding, to weaken the big ups and downs of baffle means exit air-flow on graphite boat, to reduce it to the equally distributed impact of reactant on substrate surface effective deposition regions territory.
embodiment tetra-
As shown in Figure 4, reactor is arranged in vertical hydrogenation thing vapour phase epitaxy (HVPE) growing system, and described reactor comprises rotational symmetry cylinder shape cavity 1, precursor passage 2, graphite disk 3, substrate 4.Described precursor passage is made up of the first cylinder, transition section, the second cylinder, skirt body expanding section, the 3rd cylinder from top to bottom successively; In described passage 2, in the first cylinder top, connect the first cowling panel, in the second cylinder middle part, connect the second cowling panel, two cowling panel diameters increase successively, and described cowling panel upper and lower surface is run through by manhole, and on the second cowling panel, manhole diameter is less than manhole diameter on the first cowling panel; On described every cowling panel, at least comprise more than one equal diameter manhole.In described passage 2, in the 3rd cylinder inner surface, connect a plurality of traverse baffles, traverse baffle is circumferential array arranges, and forms the first baffle means.Also in graphite plate radial outer periphery, the second baffle means is set, its structure, as Fig. 2 B, is made up of the traverse baffle of an annular bottom plate and circumferential array.Precursor gas is injected by the first cowling panel in the first cylinder in passage 2, by the effect of first, second cowling panel, makes mixture air-flow homogenizing, then passes through the expansion effect of skirt body end in passage 2, and its deposition useful area is expanded gradually; Then under the baffling effect of the first baffle means, reactant gases forms a kind of centrifugal micro-eddy flow, be uniformly distributed in substrate surface effective deposition regions territory, pass through again the strengthening baffling effect of the second baffle means of graphite plate radial surface periphery, make reactant being more evenly distributed on substrate surface effective deposition regions territory, thereby improve the homogeneity of crystal growth thickness and component.Finally, reactant gases is radially discharged from cavity bottom.
First, second, third cowling panel in the reactor that the present invention proposes, first, second baffle means both can single choice one practicality, also can select two or more combinations practical.Cowling panel is mainly used to make precursor mixed gas homogenizing, as a cowling panel effect deficiency can be multiple combinations practical; Traverse baffle is mainly used to make reactant on substrate surface effective deposition regions territory, to form a kind of centrifugal eddy flow that declines, to improve the homogeneity of crystal growth thickness and component.Reactor of the present invention, by described structure design, graphite plate rotating power source motor and attachment component thereof in existing HVPE system are removed, not only greatly simplify equipment, energy efficient, maintain easily, also eliminated the unstable disadvantageous effect to growing crystal quality of substrate rotation in existing HVPE growing system.
The above is only all several specific embodiment of the present invention, so can not be in order to limit the scope of patent of the present invention.It should be pointed out that the technology for this area, all disengaging under the prerequisite of design of the present invention, any modification of making, be equal to replacement, improvement etc., all should be included in protection scope of the present invention.
Claims (8)
1. a reactor for vertical hydrogenation thing vapour phase epitaxy (HVPE), is characterized by: comprise rotational symmetry cylinder shape cavity, precursor passage, substrate, graphite disk and support bar, cowling panel, baffle means; Wherein said precursor passage is made up of the first cylinder, transition section, the second cylinder, skirt body expanding section, the 3rd cylinder from top to bottom successively; Be further characterized in that: described cowling panel is arranged on precursor passage the first cylinder, the second cylinder or the 3rd cylinder interior; Described baffle means is arranged on the 3rd cylinder inner surface or graphite plate radial outer periphery; The lower end reactant gases exhaust outlet of described reactor adopts radially outlet.
2. hvpe reactor device according to claim 1, is characterized by: the first drum diameter of described reactor precursor passage is less than the second drum diameter, and the second drum diameter is less than the 3rd drum diameter.
3. hvpe reactor device according to claim 1, it is characterized by: in described reactor, the first, second, third upper and lower surface of cowling panel is all run through by manhole, and the manhole pore size on described three cowling panels reduces successively, on described every cowling panel, at least comprise an equal diameter manhole.
4. hvpe reactor device according to claim 1, is characterized by: in described reactor precursor passage, the first baffle means is embedded in the 3rd cylinder inner surface of passage, and baffle is wherein circumferential array and arranges.
5. hvpe reactor device according to claim 1, it is characterized by: in described reactor, the second baffle means is positioned at graphite plate radial outer periphery, its baffle circumferential array is arranged on annular bottom plate, and in its baffling direction and right 4, the first baffle means baffling direction is consistent.
6. hvpe reactor device according to claim 1, is characterized by: in described reactor, reaction gas outlet adopts radially outlet, radially to expand reaction chamber outer chamber wall.
7. hvpe reactor device according to claim 1, is characterized by: in described reactor, rotational symmetry cylinder shape cavity, precursor passage, cowling panel, baffle means all adopt high-purity quartz material.
8. hvpe reactor device according to claim 1, is characterized by; Described reactor both can be applicable to vertical HVPE system, also can be applicable to inverted HVPE system.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106238414A (en) * | 2016-07-30 | 2016-12-21 | 东莞市中镓半导体科技有限公司 | A kind of support for cleaning Source |
| CN106835267A (en) * | 2016-12-02 | 2017-06-13 | 东莞市中镓半导体科技有限公司 | A kind of hydride gas-phase epitaxy reative cell rotational flow device |
| CN117089924A (en) * | 2023-10-17 | 2023-11-21 | 凯德芯贝(沈阳)石英有限公司 | Quartz nozzle for semiconductor vapor phase epitaxy and preparation and use methods thereof |
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| US20040129213A1 (en) * | 2003-01-07 | 2004-07-08 | Shreter Yury Georgievich | Chemical vapor deposition reactor |
| DE102005056322A1 (en) * | 2005-11-25 | 2007-06-06 | Aixtron Ag | Apparatus for depositing a film on a substrate, especially for semiconductor production, comprises a process chamber that contains a substrate holder and is supplied with process gases through coaxial inlet ports |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106238414A (en) * | 2016-07-30 | 2016-12-21 | 东莞市中镓半导体科技有限公司 | A kind of support for cleaning Source |
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| CN117089924A (en) * | 2023-10-17 | 2023-11-21 | 凯德芯贝(沈阳)石英有限公司 | Quartz nozzle for semiconductor vapor phase epitaxy and preparation and use methods thereof |
| CN117089924B (en) * | 2023-10-17 | 2023-12-19 | 凯德芯贝(沈阳)石英有限公司 | Quartz nozzle for semiconductor vapor phase epitaxy and preparation and use methods thereof |
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