CN103806092B - A kind of reactor for hydride gas-phase epitaxy - Google Patents
A kind of reactor for hydride gas-phase epitaxy Download PDFInfo
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- CN103806092B CN103806092B CN201410031343.4A CN201410031343A CN103806092B CN 103806092 B CN103806092 B CN 103806092B CN 201410031343 A CN201410031343 A CN 201410031343A CN 103806092 B CN103806092 B CN 103806092B
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Abstract
The open a kind of reactor for vertical hydrogenation thing vapour phase epitaxy (HVPE) of the present invention, comprises axial symmetry column type cavity, predecessor passage, substrate, graphite disk and support bar; Wherein predecessor passage is made up of the first cylinder, changeover portion, the second cylinder, skirt body expanding section, the 3rd cylinder from top to bottom successively; This reactor also comprises the second cowling panel that is arranged on the second cylinder centre position, is arranged on the 3rd cylinder interior and has the first baffle means of circumferential array deflection plate; Comprise first, second, third cowling panel that is arranged on passage first, second, third cylinder interior, and be arranged on the second baffle means of graphite plate radial outer periphery; Comprise reaction equation chamber outer wall is radially expanded; Comprise first, second cowling panel that is arranged on first, second cylinder interior of passage, be arranged on first, second baffle means of the 3rd cylinder interior and graphite plate radial outer periphery, and the radially outlet of reacting gas.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to one for the preparation of semi-conducting material gas-phase epitaxy apparatus, particularly a kind of reactor for hydride gas-phase epitaxy (HVPE).
Background technology
Vapour phase epitaxy (VPE) technology is widely used in growing semiconductor crystals material, hydride gas-phase epitaxy (HVPE) technology wherein has the features such as fast growth, production cost be low, be highly suitable for the growth of III hi-nitride semiconductor material, the growth of for example gallium nitride (GaN) film or thick film. In HVPE growing system, halide and III family metal reaction generate one of predecessor such as III family halide, and this predecessor reacts with another predecessor such as nitrogenous gas subsequently and generates III group-III nitride. In order to obtain high-quality gallium nitride thick film, be desirably at the bottom of hvpe reactor chamber liner and obtain being uniformly distributed of reactant concentration on effective deposition regions territory, because the uniformity that reactant concentration distributes directly affects growth quality and the cost of semiconductor devices, and then affects the competitiveness of semiconductor devices in market.
Traditional hydride gas-phase epitaxy (HVPE) is with reactor taking Horizontal type as main, and wherein substrate is placed in conventionally in the gripper shoe of certain angle, and nozzle structure is generally the round nozzle along horizontal or vertical direction. Predecessor Flow Field Distribution under this air intake structure, no matter all undesirable in the circumferential or radial distribution of substrate, be not suitable for the growth of GaN thick film.
Existing hydride gas-phase epitaxy (HVPE) growing system, vertical (or inverted) reactor of conventional axial symmetry column type, the wherein circular or donut structure of sprinkler design, this structure is because graphite plate drives substrate rotation, make the circumferential distribution of reactant easily even compared with horizontal system, and the circumferential uniformity of growth obtain improvement to a certain extent and then improve grown crystal quality. But the problem that the reactor of this structure exists is: under donut shower nozzle, reactant distributes at the radial flow fields in substrate surface effective deposition regions territory, its annulus zone line is high, both sides are low, and radial flow fields under circular shower nozzle distributes, its circle centre position is high, outside low subtracting, and is unimodality; As for the circumferential uniformity of growth wafer, although drive substrate rotation to be improved by graphite plate, but bring many problems simultaneously, as: first, make graphite plate rotation need power source motor, transferring power rotating shaft and other attachment components, make device complexity, energy consumption increases, safeguards inconvenience; Secondly, rotating shaft keeps well sealing to be difficult for the vacuum environment maintaining in reactor under rotary state, and more important point is difficult in graphite plate rotary course ensure that the shake of substrate does not produce harmful effect to wafer growth quality.
For the foregoing reasons, in order to improve the growth thickness of nitride semi-conductor material and the uniformity of component thereof, need to simplify and optimize reactor assembly.
Summary of the invention
Object of the present invention, aim to provide a kind of gas-phase epitaxy apparatus of preparing semi-conducting material, a kind of reactor for hydride gas-phase epitaxy (HVPE) more specifically, to solve in existing HVPE axial symmetry cylindrical reactor, semiconductor material growing thickness and component problem of non-uniform thereof, and simplification device.
For reaching above-mentioned purpose of the present invention, will be achieved through the following technical solutions:
In existing vertical or inverted hydride gas-phase epitaxy (HVPE) system, there is the cowling panel of different pore size manhole the different section settings of cylinder type predecessor passage, make being evenly distributed of precursor gas; There is the arrange baffle means of baffle of circumferential array peripheral setting of predecessor passage the 3rd cylinder interior or graphite plate, to form a kind of centrifugal eddy flow that declines in substrate surface effective deposition regions territory, thereby remove graphite plate rotation power source motor and the attachment component in existing HVPE system.
Specifically, a kind of reactor for hydride gas-phase epitaxy (HVPE), comprise reaction chamber, predecessor passage, graphite plate, substrate slice, graphite plate support bar etc., wherein in predecessor passage the second cylinder, be provided with cowling panel, baffle means is set in predecessor passage the 3rd cylinder; The cowling panel with different pore size manhole is wherein set in predecessor passage first, second, third cylinder, in graphite plate radial outer periphery, baffle means is set; And the cowling panel with different pore size manhole is set in first, second, third cylinder of predecessor passage, be provided with baffle means in graphite plate radial outer periphery, and cavity reative cell has been carried out to radial expansion; Wherein in first, second cylinder of predecessor passage, be provided with the cowling panel of different pore size size manhole, in the 3rd cylinder, be provided with baffle means with graphite plate periphery, and when cavity reative cell is carried out to radial expansion, reaction gas outlet is adopted to radially outlet design.
Above three kinds of cowling panels and two kinds of baffle means both can be implemented separately, also can the two above Joint Implementation, the present invention has following advantage for the reactor of hydride gas-phase epitaxy (HVPE): first, this reactor has removed graphite boat rotation power source motor and attachment component in existing HVPE system, not only simplification device greatly, save energy consumption, maintain easily, also eliminated the adverse effect of graphite plate rotational instability for substrate surface institute grown crystal thickness and component uniformity; Secondly, structure of reactor of the present invention can form the micro-eddy flow of centrifugal reactant on substrate surface effective deposition regions territory, greatly improves crystal growth thickness and component uniformity.
Below in conjunction with drawings and Examples, the present invention is further described.
Brief description of the drawings
Figure 1A is the structure of reactor profile of one provided by the invention for hydride gas-phase epitaxy (HVPE), wherein: Figure 1B is cowling panel structural representation; Fig. 1 C is a kind of baffle means structural representation with circumferential array deflection plate.
Fig. 2 A is the structure of reactor profile of one provided by the invention for hydride gas-phase epitaxy (HVPE), wherein: Fig. 2 B is a kind of baffle means structural representation with circumferential array deflection plate.
Fig. 3 is that one provided by the invention is used structure of reactor profile for hydride gas-phase epitaxy (HVPE), wherein reactor chamber has been carried out radially expanding.
Fig. 4 is the structure of reactor profile of one provided by the invention for hydride gas-phase epitaxy (HVPE), wherein reaction gas outlet is adopted to radially outlet design.
Detailed description of the invention
In order to make the object, technical solutions and advantages of the present invention more cheer and bright, for several embodiment, the invention will be further described:
Embodiment mono-
As shown in Figure 1A, in vertical hydrogenation thing vapour phase epitaxy (HVPE) growing system, reactor comprises axial symmetry column type cavity 1, predecessor passage 2, graphite disk 3, substrate 4 and support bar 5, described predecessor passage 2 is followed successively by the first cylinder, changeover portion, the second cylinder, skirt body expanding section and the 3rd cylinder from top to bottom, wherein the second drum diameter is greater than the first drum diameter, and the 3rd drum diameter is greater than the second drum diameter, in this predecessor passage 2, the second cylinder interior is provided with cowling panel, and as shown in Figure 1B, described cowling panel upper and lower surface is run through by manhole, and at least more than one is equal diameter through hole for this manhole, in described predecessor passage 2, the 3rd cylinder interior is provided with polylith deflection plate, and as shown in Figure 1 C, described deflection plate is embedded in the 3rd cylinder inner surface in predecessor passage 2, is circumferential array and arranges, and forms the first baffle means, precursor gas enters by predecessor passage 2 tops, protective gas enters between predecessor passage 2 and cavity 1, precursor gas is in passage 2 in the second cylinder under the rectified action of cowling panel (Figure 1B), predecessor distributes relatively more even, then the expansion effect of process skirt body section, the effective area that predecessor distributes expands gradually, extend to baffle means in predecessor passage 2 (Fig. 1 C) top always, arrange under the baffling effect of deflection plate through thering is circumferential permutation again, precursor gas produces a kind of centrifugal micro-eddy flow, precursor gas is uniformly distributed on the substrate surface effective deposition regions territory 4 on graphite plate 3, final growth thickness and the uniform nitride semiconductor wafer of component of obtaining.
Embodiment bis-
As shown in Figure 2 A, reactor is arranged in a vertical HVPE growing system, and described reactor is made up of cavity 1, predecessor passage 2, graphite plate 3, substrate 4, support bar 5. Described predecessor passage 2 forms by five sections, be followed successively by from top to bottom the first cylinder, changeover portion, the second cylinder, skirt body expanding section, the 3rd cylinder, each drum diameter increases from top to bottom successively, and every cylindrical section inside is provided with cowling panel, is respectively first, second, third cowling panel; Described cowling panel upper and lower surface is run through by a plurality of manholes, at least comprises more than one equal diameter manhole on this cowling panel, and on each cowling panel, through-hole aperture size is successively decreased from top to bottom successively. Precursor gas is injected from predecessor passage 2 tops, the rectified action of three cowling panels that reduce successively under the expansion effect of the second cylinder and skirt body section and through through-hole aperture, and the effective depositional area of deposit constantly expands, and it is further even that air inlet becomes. As shown in Figure 2 A, be provided with a baffler (Fig. 2 B) in graphite plate 3 radial outer periphery, graphite plate 3 is supported by support bar 5, the deflection plate that described baffle means is arranged by an annular bottom plate and a plurality of circumferential array forms, the effective deposition regions territory of substrate wafer 4 is positioned at the positive middle and lower part of baffle means base plate, under the baffling effect of baffle means, make reactant gas form a kind of centrifugal eddy flow that declines in substrate surface effective deposition regions territory, finally make nitride semi-conductor material growth thickness and component more even.
Embodiment tri-
As shown in Figure 3, in the present embodiment, structure of reactor is except cavity 1, and other structures are consistent with structure of reactor in embodiment bis-, and precursor gas all adopts the inlet, outlet mode of upper entering and lower leaving. Unique variation be that reative cell place cavity in reactor has been carried out radially expanding, to weaken the big ups and downs of baffle means exit air-flow on graphite boat, to reduce it to the equally distributed impact of reactant on substrate surface effective deposition regions territory.
Embodiment tetra-
As shown in Figure 4, reactor is arranged in vertical hydrogenation thing vapour phase epitaxy (HVPE) growing system, and described reactor comprises axial symmetry column type cavity 1, predecessor passage 2, graphite disk 3, substrate 4. Described predecessor passage is made up of the first cylinder, changeover portion, the second cylinder, skirt body expanding section, the 3rd cylinder from top to bottom successively; In described passage 2, in the first cylinder top, connect the first cowling panel, in the second cylinder middle part, connect the second cowling panel, two cowling panel diameters increase successively, and described cowling panel upper and lower surface is run through by manhole, and on the second cowling panel, manhole diameter is less than manhole diameter on the first cowling panel; On described every cowling panel, at least comprise more than one equal diameter manhole. In described passage 2, in the 3rd cylinder inner surface, connect a plurality of deflection plates, deflection plate is circumferential array arranges, and forms the first baffle means. Also in graphite plate radial outer periphery, the second baffle means is set, its structure, as Fig. 2 B, is made up of the deflection plate of an annular bottom plate and circumferential array. Precursor gas is injected by the first cowling panel in the first cylinder in passage 2, by the effect of first, second cowling panel, makes mixture air-flow homogenising, then passes through the expansion effect of skirt body end in passage 2, and its deposition effective area is expanded gradually; Then under the baffling effect of the first baffle means, reacting gas forms a kind of centrifugal micro-eddy flow, be uniformly distributed in substrate surface effective deposition regions territory, pass through again the strengthening baffling effect of the second baffle means of graphite plate radial surface periphery, make reactant being more evenly distributed on substrate surface effective deposition regions territory, thereby improve the uniformity of crystal growth thickness and component. Finally, reacting gas is radially discharged from cavity bottom.
First, second, third cowling panel in the reactor that the present invention proposes, first, second baffle means both can single choice one practicality, also can select two or more combinations practical. Cowling panel is mainly used to make predecessor mist homogenising, as a cowling panel effect deficiency can be multiple combinations practical; Deflection plate is mainly used to make reactant on substrate surface effective deposition regions territory, to form a kind of centrifugal eddy flow that declines, to improve the uniformity of crystal growth thickness and component. Reactor of the present invention, by described structural design, graphite plate rotating power source motor and attachment component thereof in existing HVPE system are removed, not only greatly simplify equipment, save energy consumption, maintain easily, also eliminated the unstable adverse effect to grown crystal quality of substrate rotation in existing HVPE growing system.
The above is only all several specific embodiment of the present invention, so can not be in order to limit the scope of patent of the present invention. It should be pointed out that the technology for this area, all disengaging under the prerequisite of design of the present invention, any amendment of making, be equal to replacement, improvement etc., all should be included in protection scope of the present invention.
Claims (8)
1. a vertical hydrogenation thing vapor-phase epitaxy reactor, is characterized by: comprise axial symmetry column type cavity, forerunnerThing passage, substrate, graphite disk and support bar, have different pore size manhole cowling panel, have circumferentiallyThe baffle means of array arrangement baffle; Wherein said predecessor passage is from top to bottom successively by the first cylinder, mistakeThe section of crossing, the second cylinder, skirt body expanding section, the 3rd cylinder composition; Described cowling panel is arranged on predecessor passageOne cylinder, the second cylinder and/or the 3rd cylinder interior; Described baffle means be arranged on the 3rd cylinder inner surface and/Or graphite plate radial outer periphery; The lower end reacting gas exhaust outlet of described reactor adopts radially outlet.
2. reactor according to claim 1, is characterized by: the first circle of described reactor predecessor passageCylinder diameter is less than the second drum diameter, and the second drum diameter is less than the 3rd drum diameter.
3. reactor according to claim 1, is characterized by: in described reactor first, second, thirdThe upper and lower surface of cowling panel is all run through by manhole, and manhole aperture on described three cowling panels is largeLittlely reduce successively from top to bottom, on described every cowling panel, at least comprise an equal diameter manhole.
4. reactor according to claim 1, is characterized by: first fold in described reactor predecessor passageStream device is embedded in the 3rd cylinder inner surface of passage, and baffle is wherein circumferential array and arranges.
5. reactor according to claim 4, is characterized by: in described reactor, the second baffle means is positioned atGraphite plate radial outer periphery, its baffle circumferential array is arranged on annular bottom plate, its baffling direction and first foldStream device baffling direction is consistent.
6. reactor according to claim 1, is characterized by: in described reactor, reaction gas outlet adoptsRadially outlet, radially to expand reative cell outer chamber wall.
7. reactor according to claim 1, is characterized by: axial symmetry column type cavity in described reactor,Predecessor passage, cowling panel, baffle means all adopt high-purity quartz material.
8. reactor according to claim 1, is characterized by; Described reactor both can be applicable to vertical HVPESystem, also can be applicable to inverted HVPE system.
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| CN106238414B (en) * | 2016-07-30 | 2019-02-12 | 东莞市中镓半导体科技有限公司 | It is a kind of for cleaning the bracket of Source |
| CN106835267A (en) * | 2016-12-02 | 2017-06-13 | 东莞市中镓半导体科技有限公司 | A kind of hydride gas-phase epitaxy reative cell rotational flow device |
| CN117089924B (en) * | 2023-10-17 | 2023-12-19 | 凯德芯贝(沈阳)石英有限公司 | Quartz nozzle for semiconductor vapor phase epitaxy and preparation and use methods thereof |
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| CN101281864A (en) * | 2008-01-11 | 2008-10-08 | 南京大学 | Method and apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity |
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| CN202610321U (en) * | 2012-06-01 | 2012-12-19 | 上海大学 | Exit system of vertical spraying metalorganic chemical vapor deposition (MOCVD) reactor |
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| TW589396B (en) * | 2003-01-07 | 2004-06-01 | Arima Optoelectronics Corp | Chemical vapor deposition reactor |
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| DE102005056322A1 (en) * | 2005-11-25 | 2007-06-06 | Aixtron Ag | Apparatus for depositing a film on a substrate, especially for semiconductor production, comprises a process chamber that contains a substrate holder and is supplied with process gases through coaxial inlet ports |
| CN101281864A (en) * | 2008-01-11 | 2008-10-08 | 南京大学 | Method and apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity |
| CN101314844A (en) * | 2008-06-20 | 2008-12-03 | 江苏大学 | MOCVD reaction chamber with horizontal tangential inlet, and center vertical outlet |
| CN101824606A (en) * | 2010-05-12 | 2010-09-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical shower type MOCVD reactor |
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