CN103718253B - Conductive material and connection structural bodies - Google Patents
Conductive material and connection structural bodies Download PDFInfo
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- CN103718253B CN103718253B CN201280038121.4A CN201280038121A CN103718253B CN 103718253 B CN103718253 B CN 103718253B CN 201280038121 A CN201280038121 A CN 201280038121A CN 103718253 B CN103718253 B CN 103718253B
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- conductive material
- electrode
- structural bodies
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/51—Fixed connections for rigid printed circuits or like structures
- H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0221—Insulating particles having an electrically conductive coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
Abstract
Although it is an object of the invention to provide cation propellant has been used, will can also improve the gained conducting reliability of connection structural bodies and the conductive material of insulating reliability when being electrically connected between the electrode of connecting object part and use the connection structural bodies of the conductive material.Conductive material of the invention includes curability composition, cation exchange column, anion exchanger and electroconductive particle (5).The curability composition contains curability compound and cation propellant.Connection structural bodies (1) of the invention possesses the 1st connecting object part (2), the 2nd connecting object part (4) and the connecting portion (3) for electrically connecting the 1st connecting object part (2) and the 2nd connecting object part (4).Connecting portion (3) is solidified to form by making above-mentioned conductive material.
Description
Technical field
The present invention relates to the conductive material comprising multiple electroconductive particles, for example, relating to for by flexible printing base
The various connecting objects such as plate, glass substrate, glass epoxy substrate, semiconductor chip and organic field luminescence substrate for display device
The conductive material electrically connected between the electrode of part.Moreover, it relates to use the connection structural bodies of above-mentioned conductive material.
Background technology
Pasty state or membranaceous anisotropic conductive material are well known.In the anisotropic conductive material, multiple is led
Conductive particles are scattered in adhesive resin etc..
In order to obtain various connection structural bodies, above-mentioned anisotropic conductive material have been used for such as flexible printing substrate and
Connection (COF (the Chip on of the connection (FOG (Film on Glass)), semiconductor chip and flexible printing substrate of glass substrate
Film)), the connection (COG (Chip on Glass)) of semiconductor chip and glass substrate and flexible printing substrate and glass
Connection (FOB (Film on Board)) of epoxy substrate etc..
It is following Patent Document 1 discloses a kind of anisotropic conductive as one of above-mentioned anisotropic conductive material
Material, it is included:The metal ion of the metal ion that resinous principle, capture with thermosetting resin as principal component are dissociated by electrode
Capturing agent and electroconductive particle.Above-mentioned metal ion capturing agent has the particle diameter less than electroconductive particle.
It is following Patent Document 2 discloses a kind of anisotropic conductive material, it is included:Insulating properties bonding agent, electric conductivity
Particle and inorganic ion exchanger.
In addition, following Patent Document 3 discloses a kind of anisotropic conductive material, it is included:Cycloaliphatic epoxy resin,
Glycols, the styrene analog thermoplastic elastomer with epoxy radicals, ultraviolet activation type cationic polymerization catalyst and conduction
Property particle.
It is following Patent Document 4 discloses a kind of anisotropic conductive adhesive sheet, it is included:Curing agent, curability
Insulative resin, electroconductive particle and ion trap agent particle.In patent document 4, exchanged on ion trap agent particle
Ionic type, describe including cationic, anionic and amphoteric ion type.In addition, also being described down in patent document 4
State content:The metal ion (cation) of the immediate cause due to amphoteric ion type for the Ion transfer as electrode terminal and
Exchanged as anion both of which the reason for enabling electrical conductivity increase, generate metal ion, therefore preferably.
Prior art literature
Patent document
Patent document 1:Japanese Unexamined Patent Publication 2001-237006 publications
Patent document 2:Japanese Unexamined Patent Publication 10-245528 publications
Patent document 3:Japanese Unexamined Patent Publication 11-060899 publications
Patent document 4:Japanese Unexamined Patent Publication 2007-16088 publications
The content of the invention
Problems to be solved by the invention
The electrode of the electrode of such as semiconductor chip and glass substrate is electrically connected using above-mentioned anisotropic conductive material
When connecing, the anisotropic conductive material comprising electroconductive particle is configured on the glass substrate.Then, stacked semiconductor chips are simultaneously
Heated and pressurizeed.Thus solidify anisotropic conductive material, and will be electrically connected between electrode by electroconductive particle, obtain
Connection structural bodies.
Connection knot is being made using the such conventional anisotropic-electroconductive material described in such as patent document 1~4
During structure body, if gained connection structural bodies is used under high humidity and with "on" position, migration is triggered sometimes.Accordingly, it is possible to
Cause the insulating reliability of above-mentioned connection structural bodies low.
Particularly, used the such tradition comprising cation propellant described in such as patent document 3 each to different
There are the following problems for the connection structural bodies of property conductive material:When using under high humidity and with "on" position, easily trigger migration.
In addition, as described in patent document 4, during using only ion trap agent, possibly cannot fully suppress to move
Move.Also, in the embodiment of patent document 4, only it is the use of the ion trap agent particle and anionic of cationic
Any ion trap agent in ion trap agent particle.The ion of the cationic with regard to being used in the embodiment of patent document 4 is caught
The ion trap of the amphoteric ion type enumerated in the ion trap agent particle and patent document 4 that obtain agent particle and anionic
For agent particle, according to the species of other gradation compositions, migration cannot be fully suppressed sometimes.
In addition, in recent years, width is that L/S (line/spacing) further subtracts between the electrode width/electrode of above-mentioned connection structural bodies
It is small.There are the following problems:The L/S of the electrode of above-mentioned connection structural bodies is smaller, when migrating, easier generation defective insulation.
Although it is an object of the invention to provide having used cation propellant, will electricity between the electrode of connecting object part
Also the gained conducting reliability of connection structural bodies and the conductive material of insulating reliability can be improved during connection and this has been used
The connection structural bodies of conductive material.
The method of solve problem
When holding the present invention from wider layer face, the present invention provides a kind of conductive material, its include curability composition, sun from
Sub- permutoid, anion exchanger and electroconductive particle, above-mentioned curability composition contains curability compound and cation occurs
Agent.
In a certain particular aspects of conductive material of the invention, the neutral exchange capacity of above-mentioned cation exchange column is
More than 2meq/g, also, the neutral exchange capacity of above-mentioned anion exchanger is more than 1meq/g.
Above-mentioned cation exchange column preferably comprises zirconium atom.Above-mentioned anion exchanger preferably comprises magnesium atom and aluminium is former
Son.
It is above-mentioned relative to the above-mentioned weight portion of curability compound 100 in other particular aspects of conductive material of the invention
The content of cation exchange column is more than 0.01 weight portion and below 5 weight portions, also, the content of above-mentioned anion exchanger is
More than 0.01 weight portion and below 5 weight portions.
In another particular aspects of conductive material of the invention, above-mentioned electroconductive particle has resin particle and is configured at this
Conductive layer on resin particle surface, at least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
In another particular aspects of conductive material of the invention, it also includes solder flux.
Conductive material of the invention is preferably used for the conductive material of the connecting object part connection with copper electrode.
Conductive material of the invention is preferably anisotropic conductive material.
Connection structural bodies of the invention possesses the 1st connecting object part, the 2nd connecting object part and by the 1st, the 2nd
The connecting portion of connecting object part electrical connection, the connecting portion is formed by above-mentioned conductive material.
In a certain particular aspects of connection structural bodies of the invention, the surface of above-mentioned 1st connecting object part has the 1st electricity
Pole, the surface of above-mentioned 2nd connecting object part has the 2nd electrode, and above-mentioned 1st electrode and above-mentioned 2nd electrode are by above-mentioned conduction
Property particle be electrically connected, at least one of above-mentioned 1st electrode and above-mentioned 2nd electrode be copper electrode.
The effect of invention
Conductive material of the invention includes electroconductive particle and the solidification containing curability compound and cation propellant
Property composition, and comprising both cation exchange column and anion exchanger, therefore, although having used cation propellant,
The conducting reliability of connection structural bodies and insulation can obtained by can also being improved when that will be electrically connected between the electrode of connecting object part
By property.
Brief description of the drawings
[Fig. 1] Fig. 1 is front section view, it is schematically shown that used the conductive material of an embodiment of the present invention
Connection structural bodies.
[Fig. 2] Fig. 2 (a)~(c) is front section view, for being obtained to the conductive material using an embodiment of the present invention
The each operation for obtaining connection structural bodies is illustrated.
Symbol description
1 ... connection structural bodies
2 ... the 1st connecting object parts
2a ... surfaces
The electrodes of 2b ... the 1st
3 ... connecting portions
3a ... is above
3A ... conductive material layers
3B ... have passed through the conductive material layer of B-staged
4 ... the 2nd connecting object parts
4a ... surfaces
The electrodes of 4b ... the 2nd
5 ... electroconductive particles
Specific embodiment
Hereinafter, the present invention is described in detail.
Conductive material of the invention includes curability composition, cation exchange column, anion exchanger and electroconductive particle.
Above-mentioned curability composition contains curability compound and cation propellant.
Conductive material of the invention especially by using cation exchange column and anion by with above-mentioned composition, handing over
Both bodies are changed, although having used cation propellant, will can also improved when being electrically connected between the electrode of connecting object part
The conducting reliability and insulating reliability of gained connection structural bodies.Particularly, even if being somebody's turn to do under high humidity and with "on" position use
Connection structural bodies, is not easy to produce migration in the conductive part and electrode of electroconductive particle, can substantially ensure that insulating reliability high.
In conductive material of the invention, above-mentioned curability composition contains curability compound and curing agent.Above-mentioned solidification
Agent contains cation propellant.When conductive material includes cation propellant, there is the migration easily triggered in connection structural bodies
Tendency.On the other hand, conductive material of the invention comprising electroconductive particle and containing curability compound and cation due to sending out
The curability composition of raw agent, and comprising both cation exchange column and anion exchanger, although therefore used sun from
Sub- propellant, it is also possible to effectively suppress the migration in connection structural bodies, insulating reliability can be effectively improved.
In addition, the present inventor etc. has found, by using the thermosetting beyond cation propellant, with use cation propellant
The situation of agent (imidazolium compounds etc.) is compared, and can effectively improve conducting reliability.
In addition, the present inventor etc. has found, it is applied in combination by by both cation exchange column and anion exchanger, with
Cation exchange column is used alone or anion exchanger is used alone or the situation phase of amphion permutoid is used alone
Than, in the conductive material comprising cation propellant, can extremely efficient suppress the generation of migration, can effectively improve
Insulating reliability.
Conductive material of the invention include only containing cation exchange column as ion exchanger conductive material.This hair
Bright conductive material include only containing anion exchanger as ion exchanger conductive material.Conductive material of the invention
Do not include being handed over as ion exchanger comprising amphion permutoid but both not comprising cation exchange column not comprising anion yet
Change the conductive material of body.
In addition, in order to realize that low temperature solidifies rapidly, it is preferred to use Cationic curing systems.Dividing based on cation propellant
Contained ionic composition is readily diffused into composition and the cation-curable compound such as epoxide in minor structure
Sometimes with reasons such as chlorions, in the case of using cation propellant, easily caused by micro ionic composition
Electrode corrosion.Therefore, in the case of using cation propellant, there is the problem in terms of interelectrode connection reliability.
On the other hand, effect can be obtained for above-mentioned problem using ion exchanger, but its effect is sometimes and insufficient.
It was found that, by using cation exchange column and both anion exchanger, rather than using only cation exchange column and the moon from
Any one ion exchanger in sub- permutoid, significant effect can be obtained for above-mentioned problem.It is believed that this is because,
In the case of using only one of cation exchange column and anion exchanger, a kind of ion can be only captured, thus, sun
The dissociation equilibrium of ion propellant etc. is destroyed, as a result, counter ion counterionsl gegenions continue with free state presence, therefore cannot fully drop
The harmful effect of the ion component in low composition.In addition, having the amphion of negative and positive amphion capture ability with use
The situation of permutoid is compared, in the case of using both cation exchange column and anion exchanger, for above-mentioned problem more
For effective.Its reason is still not clear, but can be presumed as follows:Compound with negative and positive amphion capture ability has due to it
The site of the respective capture ability of negative and positive approaches, therefore causes capture ability to be cancelled out each other, effect reduction.
Method as conductive material of the invention is solidified, can enumerate:The method of illumination is carried out to conductive material, to leading
Method that electric material is heated, conductive material is carried out to heat the method for conductive material after illumination and conductive material is entered
The method for carrying out illumination after row heating to conductive material.In addition, had differences in the speed of photocuring and the speed of heat cure
Situation is inferior, it is also possible to carry out illumination and heating simultaneously.Wherein, preferred pair conductive material heats conductive material after carrying out illumination
Method.It is applied in combination by by photocuring and heat cure, can solidifies in a short time conductive material.
Above-mentioned curability compound can be can be solidified by heating curability compound (heat-curable compounds,
Or light and Thermocurable compound), or curability compound (the photo-curable chemical combination that can be solidified by illumination
Thing or light and Thermocurable compound).Above-mentioned curability compound is preferably capable the curability chemical combination solidified by heating
Thing (heat-curable compounds or light and Thermocurable compound).
Above-mentioned conductive material is the conductive material that can be solidified by heating, as above-mentioned curability compound, can be wrapped
Containing the curability compound (heat-curable compounds or light and Thermocurable compound) that can be solidified by heating.This can
The curability compound solidified by heating can be curability compound (the thermosetting chemical combination that will not solidify by illumination
Thing), it is also possible to the curability compound (light and Thermocurable compound) that can be solidified by illumination and heating both of which.
Additionally, it is preferred that above-mentioned conductive material is the conductive material that can be solidified by illumination and heating both of which, and make
Be above-mentioned curability compound, further comprising can be solidified by illumination curability compound (photocurable compound,
Or light and Thermocurable compound).At this point it is possible to making conductive material semi-solid preparation (B-staged) by illumination, so that conductive
After the mobility of material declines, conductive material is solidified by heating.The above-mentioned curability that can be solidified by illumination
Compound can be the curability compound (photocurable compound) that will not solidify by heating, or by illumination and plus
The curability compound (light and Thermocurable compound) that hot both of which can solidify.
Conductive material of the invention includes curing agent.Conductive material of the invention is comprising cation propellant as above-mentioned solid
Agent.Above-mentioned cation propellant can be produced by heating cation cation propellant (hot cation propellant,
Or light and hot cation propellant), or the cation propellant of cation is produced by illumination, and (light cation occurs
Agent or light and hot cation propellant).Above-mentioned curability compound produces the cation of cation to send out preferably by heating
Raw agent (hot cation propellant or light and hot cation propellant).
Conductive material of the invention can also include trigger for optical solidification.Conductive material of the invention preferably comprises light freedom
Base propellant is used as above-mentioned trigger for optical solidification.
In above-mentioned conductive material, as above-mentioned curability compound, preferably comprise heat-curable compounds and further include
Photocurable compound or light and Thermocurable compound.Above-mentioned conductive material preferably comprises heat-curable compounds and photocuring
Property compound is used as above-mentioned curability compound.
Hereinafter, each composition for being applicable to conductive material of the invention is specifically described first.
(curability compound)
The curability compound included in above-mentioned conductive material is not particularly limited.As above-mentioned curability compound, can
Use conventional known curability compound.Above-mentioned curability compound can be using only a kind, it is also possible to combine two or more
Use.
Above-mentioned curability compound preferably comprises the curability compound with epoxy radicals.Curability with epoxy radicals
Compound is epoxide.The above-mentioned curability compound with epoxy radicals can be using only a kind, it is also possible to by two or more group
Conjunction is used.
The above-mentioned curability compound with epoxy radicals preferably has aromatic ring.As above-mentioned aromatic ring, can enumerate:Phenyl ring, naphthalene
Ring, anthracene nucleus, phenanthrene ring, aphthacene ring,Ring, benzo phenanthrene ring, benzo anthracene nucleus, pyrene ring, pentacene ring, Pi ring and perylene ring
Deng.Wherein, above-mentioned aromatic ring is preferably phenyl ring, naphthalene nucleus or anthracene nucleus, more preferably phenyl ring or naphthalene nucleus.In addition, naphthalene nucleus is due to flat
Face structure, therefore, it is possible to more promptly solidify, therefore it is preferred that.
From from the viewpoint of the curability for improving above-mentioned conductive material, in the overall 100 weight % of above-mentioned curability compound
In, the content of the above-mentioned curability compound with epoxy radicals is preferably more than 10 weight %, more preferably more than 20 weight % and
Below 100 weight %.Can also be that the above-mentioned curability compound of whole amount is the above-mentioned curability chemical combination with epoxy radicals
Thing.It is applied in combination the above-mentioned curability compound with epoxy radicals and its different from the curability compound that this has epoxy radicals
In the case of its curability compound, in the overall 100 weight % of above-mentioned curability compound, above-mentioned consolidating with epoxy radicals
Change property compound content be preferably below 99 weight %, more preferably below 95 weight %, more preferably 90 weight % with
Under, particularly preferably below 80 weight %.
Above-mentioned curability compound can also further contain other different from the curability compound with epoxy radicals
Curability compound.As other curability compounds, can enumerate:Curability compound with unsaturated double-bond, phenol are solid
The property changed compound, amino curability compound, curable unsaturated polyester compound, urethane cures compound, organosilicon
Curability compound and polyimide curing compound etc..Above-mentioned other curability compounds can be using only a kind, it is also possible to
Two or more is applied in combination.
From the solidification for being easily controlled above-mentioned conductive material or the viewpoint of the further conducting reliability for improving connection structural bodies
Set out, above-mentioned curability compound preferably comprises the curability compound with unsaturated double-bond.From being easily controlled above-mentioned conduction
The solidification of material or from the viewpoint of further improving the conducting reliability of connection structural bodies, it is above-mentioned with unsaturated double-bond
Curability compound is preferably the curability compound with (methyl) acryloyl group.By using above-mentioned with (methyl) propylene
The curability compound of acyl group, can easily by the conductive material after B-staged it is overall (including light direct irradiation part and light not
The part of direct irradiation) curing degree be controlled in suitable scope, can further improve gained connection structural bodies conducting can
By property.
The curing degree of the conductive material layer from after being easily controlled B-staged and further raising gained connection structural bodies
From the viewpoint of conducting reliability, the above-mentioned curability compound with (methyl) acryloyl group preferably has 1 or 2 (first
Base) acryloyl group.
The curing degree of the conductive material layer from after being easily controlled B-staged and further raising gained connection structural bodies
From the viewpoint of conducting reliability, the above-mentioned curability compound with (methyl) acryloyl group preferably has 1 or 2 (first
Base) acryloyl group.
As the above-mentioned curability compound with (methyl) acryloyl group, can enumerate without epoxy radicals and with (first
Base) acryloyl group curability compound and with epoxy radicals and with the curability compound of (methyl) acryloyl group.
As the above-mentioned curability compound with (methyl) acryloyl group, preferably use:Make (methyl) acrylic acid and tool
There are ester compounds obtained from the compound reaction of hydroxyl, make (methyl) acrylic acid and epoxy obtained from epoxide reaction
(methyl) acrylate makes (methyl) acrylic acid derivative with hydroxyl and carbamic acid obtained from isocyanates reaction
Ester (methyl) acrylate etc..Above-mentioned " (methyl) acryloyl group " represents acryloyl group and methylacryloyl.Above-mentioned " (methyl)
Acrylic acid " represents acrylic acid and methacrylic acid.Above-mentioned " (methyl) acrylate " represents acrylate and methacrylate.
It is above-mentioned to be not particularly limited (methyl) acrylic acid and ester compounds obtained from the reaction of the compound with hydroxyl.
As the ester compounds, ester compounds more than ester compounds, the ester compounds of difunctionality and the trifunctional of simple function can be used
In any compound.
The above-mentioned curability compound with epoxy radicals and with (methyl) acryloyl group preferably will be with more than 2 rings
The PART EPOXY base of the compound of epoxide is converted into curability compound obtained from (methyl) acryloyl group.The curability chemical combination
Thing is part (methyl) Acrylated Epoxy compound.
Above-mentioned curability compound is preferably comprised with more than 2 compounds of epoxy radicals and (methyl) acrylic acid reaction
Thing.The compound and (methyl) acrylic acid that the reactant passes through to make to have more than 2 epoxy radicals are conventionally urged in acidity
Reacted in the presence of the catalyst such as agent and obtained.It is preferred that more than 20% (conversion ratio) of epoxy radicals is converted into (methyl) acryloyl
Base.Conversion ratio is more preferably more than 30%, is preferably less than 80%, more preferably less than 70%.Most preferably more than the 40% of epoxy radicals
And less than 60% be converted into (methyl) acryloyl group.
As above-mentioned part (methyl) Acrylated Epoxy compound, can enumerate:Biphenol type epoxy (methyl) acrylic acid
Ester, cresol novolak type epoxy (methyl) acrylate, carboxylic acid anhydride modified epoxy (methyl) acrylate and phenol novolac are clear
Paint shaped epoxy (methyl) acrylate etc..
Used as above-mentioned curability compound, can be used, there are more than the 2 PART EPOXY bases of the phenoxy resin of epoxy radicals to turn
Turn to the modified phenoxy resin of (methyl) acryloyl group.That is, changing with epoxy radicals and (methyl) acryloyl group can be used
Property phenoxy resin.
In addition, above-mentioned curability compound can be cross-linked compound, or non-crosslinked property compound.
As the concrete example of above-mentioned cross-linked compound, can enumerate for example:1,4- butanediols two (methyl) acrylate, 1,
6- hexylene glycols two (methyl) acrylate, 1,9- nonanediols two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylic acid
Ester, (poly-) propane diols two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylic acid
Ester, glycerol methacrylate acrylate, pentaerythrite three (methyl) acrylate, trimethylol propane trimethyl acrylic acid
Ester, (methyl) allyl acrylate, (methyl) vinyl acrylate, divinylbenzene, polyester (methyl) acrylate and amino
Formic acid esters (methyl) acrylate etc..
As the concrete example of above-mentioned non-crosslinked property compound, can enumerate:(methyl) ethyl acrylate, (methyl) acrylic acid are just
Propyl ester, (methyl) isopropyl acrylate, (methyl) n-butyl acrylate, (methyl) isobutyl acrylate, (methyl) acrylic acid uncle
Butyl ester, (methyl) amyl acrylate, (methyl) Hexyl 2-propenoate, (methyl) heptylacrylate, (methyl) acrylic acid 2- ethyl hexyls
Ester, (methyl) n-octyl, (methyl) Isooctyl acrylate monomer, (methyl) acrylic acid nonyl ester, (methyl) decyl acrylate,
(methyl) acrylic acid hendecane base ester, (methyl) dodecylacrylate, (methyl) tridecyl acrylate and (methyl)
Acrylic acid tetradecane base ester etc..
In the case that heat-curable compounds and photocurable compound are applied in combination, photocurable compound and thermosetting
The match ratio of compound can suitably be adjusted according to photocurable compound with the species of heat-curable compounds.Above-mentioned conductive material
The content of middle photocurable compound and heat-curable compounds is preferably 1 with weight ratio meter:99~90:10th, more preferably 5:95
~60:40th, more preferably 10:90~40:60.
(curing agent)
Above-mentioned conductive material includes curing agent.The curing agent can be thermal curing agents, or trigger for optical solidification.Should
Curing agent includes cation propellant.As the cation propellant, conventional known cation propellant can be used.In addition,
In the present invention, the light cation that cation propellant is preferably not used as only being used to make conductive material that photocuring to occur occurs
Agent, but used as the hot cation propellant for being used to make conductive material that heat cure at least to occur.Additionally, in the present invention,
Cation propellant is preferably not used as the light cation propellant for making conductive material that photocuring to occur, but conduct is used to
The hot cation propellant for making conductive material that heat cure to occur is used.Above-mentioned cation propellant can be using only a kind, it is also possible to
Two or more is applied in combination.
As above-mentioned cation propellant, iodine is preferably usedSalt and sulfonium salt.For example, as above-mentioned cation propellant
Commercially available product, can enumerate:The Sun-aid SI-45L of three new chemical companies manufacture, SI-60L, SI-80L, SI-100L, SI-110L,
SI-150L, Adekaoptomer SP-150, SP- of K-PURE the and ADEKA companies manufacture of this chemical conversion of nanmu company manufacture
170 etc..
As the anionicsite of preferred cation propellant, PF can be enumerated6、BF4And B (C6F5)4。
In addition, as other concrete examples of above-mentioned cation propellant, can enumerate:(the phenyl-pentafluoride of 2- cyclobutenyls dimethyl four
Base) boric acid sulfonium, 2- cyclobutenyl dimethyl tetrafluoro boric acids sulfonium, 2- cyclobutenyl dimethyl hexafluorophosphoric acids sulfonium, 2- cyclobutenyl tetramethylenes
Four (pentafluorophenyl group) boric acid sulfoniums, 2- cyclobutenyl tetramethylene tetrafluoro boric acids sulfonium, 2- cyclobutenyl tetramethylene hexafluorophosphoric acids sulfonium, 3- first
(pentafluorophenyl group) the boric acid sulfonium of base -2- cyclobutenyls dimethyl four, 3- methyl-2-butene base dimethyl tetrafluoro boric acids sulfonium, 3- methyl -2-
Cyclobutenyl dimethyl hexafluorophosphoric acid sulfonium, (pentafluorophenyl group) the boric acid sulfonium of 3- methyl-2-butene bases tetramethylene four, 3- methyl -2- fourths
Alkenyl tetramethylene tetrafluoro boric acid sulfonium, 3- methyl-2-butene base tetramethylene hexafluorophosphoric acids sulfonium, 4- hydroxy phenyl Chinese cassia tree ylmethyls
Four (pentafluorophenyl group) boric acid sulfoniums, 4- hydroxy phenyl Chinese cassia tree ylmethyl tetrafluoro boric acids sulfonium, 4- hydroxy phenyl Chinese cassia tree ylmethyl hexafluoro phosphorus
Sour sulfonium, (pentafluorophenyl group) boric acid of Alpha-Naphthyl methyltetramethylene four sulfonium, Alpha-Naphthyl methyltetramethylene tetrafluoro boric acid sulfonium, Alpha-Naphthyl
Methyltetramethylene hexafluorophosphoric acid sulfonium, (pentafluorophenyl group) boric acid of cinnamyl dimethyl four sulfonium, cinnamyl dimethyl tetrafluoro boric acid sulfonium,
Cinnamyl dimethyl hexafluorophosphoric acid sulfonium, (pentafluorophenyl group) boric acid of cinnamyl tetramethylene four sulfonium, cinnamyl tetramethylene tetrafluoro boron
Sour sulfonium, cinnamyl tetramethylene hexafluorophosphoric acid sulfonium, (pentafluorophenyl group) boric acid of diphenylmethyl dimethyl four sulfonium, diphenylmethyl two
Methyl tetrafluoro boric acid sulfonium, diphenylmethyl dimethyl hexafluorophosphoric acid sulfonium, diphenylmethyl tetramethylene four (pentafluorophenyl group) boric acid
Sulfonium, diphenylmethyl tetramethylene tetrafluoro boric acid sulfonium, diphenylmethyl tetramethylene hexafluorophosphoric acid sulfonium, phenyl methyl dimethyl four
(pentafluorophenyl group) boric acid sulfonium, phenyl methyl dimethyl tetrafluoro boric acid sulfonium, phenyl methyl dimethyl hexafluorophosphoric acid sulfonium, phenyl methyl four
(pentafluorophenyl group) boric acid of methylene four sulfonium, phenyl methyl tetramethylene tetrafluoro boric acid sulfonium, phenyl methyl tetramethylene hexafluorophosphoric acid
Sulfonium, (pentafluorophenyl group) boric acid of fluorenyl methyl dimethyl four sulfonium, fluorenyl methyl dimethyl tetrafluoro boric acid sulfonium, fluorenyl methyl dimethyl six
Fluorophosphoric acid sulfonium, (pentafluorophenyl group) boric acid of fluorenyl methyl tetramethylene four sulfonium, fluorenyl methyl tetramethylene tetrafluoro boric acid sulfonium and fluorenyl
Methyltetramethylene hexafluorophosphoric acid sulfonium etc..
Above-mentioned cation propellant is preferably released inorganic acid ion by heating or is released former comprising boron by heating
The organic acid ion of son.Above-mentioned cation propellant releases the composition of inorganic acid ion preferably by heating, also preferably
The composition of the organic acid ion comprising boron atom is released by heating.
The cation propellant that inorganic acid ion is released by heating is preferably with SbF6-Or PF6-As anion
Partial compound.Above-mentioned cation propellant is preferably with SbF6-As the compound of anionicsite, also preferably have
There is PF6-As the compound of anionicsite.
The anionicsite of above-mentioned cation propellant is preferably such as B (C6X5)4 -It is shown.Release the organic acid comprising boron atom
The cation propellant of ion is preferably the compound with the anionicsite shown in following formula (1).
[chemical formula 1]
In above-mentioned formula (1), X represents halogen atom.X in above-mentioned formula (1) is preferably chlorine atom, bromine atoms or fluorine atom, more
Preferably fluorine atom.
The anionicsite of above-mentioned cation propellant is preferably such as B (C6F5)4 -It is shown.Above-mentioned releasing having comprising boron atom
The cation propellant of machine acid ion is more preferably the compound with the anionicsite shown in following formula (1A).
[chemical formula 2]
The content of above-mentioned cation propellant is not particularly limited.Relative to the above-mentioned weight portion of curability compound 100, on
The content for stating cation propellant is preferably more than 0.01 weight portion, is more preferably more than 0.05 weight portion, being more preferably 5
More than weight portion, more than particularly preferably 10 weight portions, below preferably 40 weight portions, below more preferably 30 weight portions, enter
One step is preferably below 20 weight portions.Above-mentioned cation propellant relative to above-mentioned curability compound content in above-mentioned lower limit
When above and below the above-mentioned upper limit, conductive material fully solidifies.
Relative to the above-mentioned weight portion of curability compound 100 that can be solidified by heating, above-mentioned cation propellant
Content be preferably more than 0.01 weight portion, more preferably more than 0.05 weight portion, more than more preferably 5 weight portions, it is special
You Xuanwei not be more than 10 weight portions, below preferably 40 weight portions, below more preferably 30 weight portions, more preferably 20 weights
Below amount part.Content relative to the above-mentioned cation propellant of the above-mentioned curability compound that can be solidified by heating is existed
When more than above-mentioned lower limit and below the above-mentioned upper limit, the abundant heat cure of conductive material.
From the viewpoint for further improving the connection reliability of interelectrode conducting reliability and connection structural bodies under high humidity
Set out, above-mentioned conductive material preferably comprises both above-mentioned cation propellant and hot radical propellant.Above-mentioned hot radical
Propellant is not particularly limited.As above-mentioned hot radical propellant, conventional known hot radical propellant can be used.It is above-mentioned
Hot radical propellant can be using only a kind, it is also possible to be applied in combination two or more.Here, described " hot radical propellant "
Refer to that the compound of free radical kind is generated by heating.
As above-mentioned hot radical propellant, it is not particularly limited, azo-compound and peroxide etc. can be enumerated.As
Above-mentioned peroxide, can enumerate:Diacyl peroxide compound, peroxyester compound, hydroperoxide compound, peroxide
Change two carbonate products, peroxy ketal compound, dialkyl peroxide compound and ketone peroxide compound etc..
As above-mentioned azo-compound, can enumerate for example:Double (the 2- methyl fourths of 2,2 '-azodiisobutyronitrile, 2,2 '-azo
Nitrile), 2,2 '-azo double (2,4- methyl pentane nitriles), the double -1- cyclohexane carbonitriles of 1,1 '-azo, the isobutyric acid two of 2,2 '-azo two
Double (2 Methylpropionic acid) dimethyl esters of methyl esters, 2,2 '-azo, 1,1 '-azo double (1- naphthenic acids) dimethyl ester, 4,4 '-azos
Double (2- amidine propanes) dihydrochlorides of double (4- cyanopentanoic acids), 2,2 '-azo, 2- tert-butyl group azo -2- dicyanopropanes, 2,2 ' -
Double (2- methyl propanamides) dihydrates of azo and 2,2 '-azo double (2,4,4- trimethylpentanes) etc..
As above-mentioned diacyl peroxide compound, can enumerate:Benzoyl peroxide, diisobutyryl peroxide, peroxide
Change two (3,5,5- trimethyl acetyls), dilauroyl peroxide and disuccinic acid peroxide etc..As above-mentioned peroxyester chemical combination
Thing, can enumerate:Cumyl peroxyneodecanoate, peroxidating neodecanoic acid 1,1,3,3- tetramethyls butyl ester, peroxidating neodecanoic acid uncle
Own ester, new peroxide tert-butyl caprate, the new heptanoic acid tert-butyl ester of peroxidating, the tertiary own ester of peroxidating neopentanoic acid, peroxidating -2- ethyl hexyls
Sour 1,1,3,3- tetramethyls butyl ester, 2,5- dimethyl -2,5- two (2- ethyihexanoylperoxies) hexane, peroxidating -2- ethyl hexyls
Sour tertiary own ester, tert-Butyl peroxypivalate, peroxide -2-ethyl hexanoic acid tert-butyl, peroxidating tert-butyl isobutyrate, peroxidating
Bay tert-butyl acrylate, the peroxidating isophthalic acid tert-butyl ester, peroxide acetic acid butyl ester, the peroxidation acid tert-butyl ester and benzoyl peroxide
T-butyl formate etc..As above-mentioned hydroperoxide compound, can enumerate:Cumene hydroperoxide, p-menthane hydroperoxide etc..As
Above-mentioned peroxy dicarbonate compound, can enumerate:Peroxide-butyl carbonate, (the 4- tert-butyl groups of peroxy dicarbonate two
Cyclohexyl) ester, peroxy dicarbonate di-n-propyl ester, di-isopropyl peroxydicarbonate and (the 2- ethyl hexyls of peroxy dicarbonate two
Base) ester etc..In addition, as other examples of above-mentioned peroxide, can enumerate:Methyl-ethyl-ketone peroxide, potassium peroxydisulfate and 1,
Double (tert-butyl hydroperoxide) -3,3,5- trimethyl-cyclohexanes of 1- etc..
Being used to of above-mentioned hot radical propellant obtain 10 hour decomposition temperature of half-life period be preferably more than 30 DEG C, it is more excellent
Elect more than 40 DEG C as, be preferably less than 90 DEG C, more preferably less than 80 DEG C, more preferably less than 70 DEG C.Above-mentioned heat is freely
When being used to obtain 10 hour decomposition temperature of half-life period less than 30 DEG C of base propellant, exist under the bin stability of conductive material
The tendency of drop, during more than 90 DEG C, exists and is difficult to make the abundant heat cure of conductive material by the effect of above-mentioned hot radical propellant
Tendency.
The content of above-mentioned thermal curing agents is not particularly limited.Above-mentioned in relative to above-mentioned curability compound can pass through
Heating and the weight portion of curability compound 100 that solidifies, the content of above-mentioned thermal curing agents is preferably more than 0.01 weight portion, more excellent
Elect as more than 0.05 weight portion, be more preferably preferably 40 weights more than 5 weight portions, more than particularly preferably 10 weight portions
Below amount part, below more preferably 30 weight portions, below more preferably 20 weight portions.The content of above-mentioned thermal curing agents is upper
State when more than lower limit and below the above-mentioned upper limit, can make conductive material that heat cure fully occurs.Above-mentioned thermal curing agents are only cation
In the case of propellant, the content of above-mentioned thermal curing agents represents the content of cation propellant, above-mentioned thermal curing agents comprising sun from
In the case of both sub- propellant and other thermal curing agents (hot radical propellant etc.), the content of above-mentioned thermal curing agents represents sun
The total content of ion propellant and other thermal curing agents.
In the case that above-mentioned curing agent includes hot radical propellant, relative to the above-mentioned energy in above-mentioned curability compound
Enough weight portions of curability compound 100 solidified by heating, the content of above-mentioned hot radical propellant is preferably 0.01 weight
More than amount part, more than more preferably 0.05 weight portion, below preferably 10 weight portions, below more preferably 5 weight portions.Above-mentioned heat
When the content of free radical generating agent is more than above-mentioned lower limit and below the above-mentioned upper limit, can make conductive material that heat cure fully occurs.
Above-mentioned conductive material can be comprising trigger for optical solidification as above-mentioned curing agent.Trigger for optical solidification is comprising above-mentioned
Light cation propellant (light cation propellant or light and hot cation propellant).Above-mentioned trigger for optical solidification is not special
Limitation.As above-mentioned trigger for optical solidification, conventional known trigger for optical solidification can be used.From further improving interelectrode leading
From the viewpoint of the connection reliability of logical reliability and connection structural bodies, above-mentioned conductive material preferably comprises optical free radical generation
Agent.Above-mentioned trigger for optical solidification can be using only a kind, it is also possible to be applied in combination two or more.
As other trigger for optical solidification beyond above-mentioned cation propellant, it is not particularly limited, can enumerates:Acetophenone
(benzophenone optical free radical occurs for trigger for optical solidification (acetophenone optical free radical propellant), benzophenone trigger for optical solidification
Agent), thioxanthones, ketal trigger for optical solidification (ketal optical free radical propellant), halogenation ketone, acylphosphine oxide and acylphosphanes
Acid esters etc..
As the concrete example of above-mentioned acetophenone trigger for optical solidification, can enumerate:4- (2- hydroxyl-oxethyls) phenyl (2- hydroxyls
Base -2- propyl group) ketone, 2- hydroxy-2-methyl -1- phenyl-propane -1- ketone, methoxyacetophenone, 2,2- dimethoxy -1,2- hexichol
Base ethane -1- ketone and 2- hydroxyl -2- cyclohexyl benzene ethyl ketones etc..As the concrete example of above-mentioned ketal trigger for optical solidification, can arrange
Lift:Benzoin dimethylether (benzil dimethyl ketal) etc..
The content of above-mentioned trigger for optical solidification is not particularly limited.Above-mentioned in relative to above-mentioned curability compound is led to
The weight portion of curability compound 100 crossed illumination and solidify, the content of above-mentioned trigger for optical solidification be preferably 0.1 weight portion with
More than upper, more preferably 0.2 weight portion, it is preferably below 2 weight portions, is more preferably below 1 weight portion.Above-mentioned photocuring triggers
When the content of agent is more than above-mentioned lower limit and below the above-mentioned upper limit, can make conductive material that photocuring moderately occurs.By to leading
Electric material carries out illumination, carries out B-staged, can suppress the flowing of conductive material.Above-mentioned trigger for optical solidification is only that cation occurs
In the case of agent, the content of above-mentioned trigger for optical solidification represents the content of cation propellant, and above-mentioned trigger for optical solidification is included
In the case of both cation propellant and other trigger for optical solidification, the content of above-mentioned trigger for optical solidification represents cation hair
Raw agent and the total content of other trigger for optical solidification.
(ion exchanger)
Contained cation exchange column and anion exchanger are not particularly limited in above-mentioned conductive material.Above-mentioned cation
Permutoid can be using only a kind, it is also possible to be applied in combination two or more.Above-mentioned anion exchanger can using only a kind,
Two or more can be applied in combination.
As above-mentioned cation exchange column, Zr cationoids permutoid and Sb cationoid permutoids etc. can be enumerated.From entering
One step suppresses from the viewpoint of migration, further raising insulating reliability in connection structural bodies, and above-mentioned cation exchange column is excellent
Elect Zr cationoid permutoids as, preferably comprise zirconium atom.
As the commercially available product of above-mentioned cation exchange column, IXE-100 can be enumerated and IXE-300 (synthesizes by East Asia above
Company manufactures) etc..
As above-mentioned anion exchanger, can enumerate:Bi anionoids permutoid, Mg-Al anionoids permutoid and Zr
Anionoid permutoid etc..Migration, the further viewpoint for improving insulating reliability from further connection structural bodies is suppressed go out
Hair, above-mentioned cation exchange column is preferably Mg-Al anionoid permutoids, preferably comprises magnesium atom and aluminium atom.
As the commercially available product of above-mentioned anion exchanger, IXE-500, IXE-530 and IXE-550, IXE-700F can be enumerated
And IXE-800 (being manufactured by East Asia Synesis Company above) etc..
The neutral exchange capacity of above-mentioned cation exchange column is preferably more than 1meq/g, more preferably more than 2meq/g, excellent
Elect below 10meq/g, more preferably below 4meq/g as.The neutral exchange capacity of above-mentioned cation exchange column above-mentioned lower limit with
When below the upper and above-mentioned upper limit, can further suppress the migration in connection structural bodies, further improve insulating reliability.
The neutral exchange capacity of above-mentioned anion exchanger be preferably more than 0.1meq/g, more preferably more than 1meq/g,
Preferably below 10meq/g, more preferably below 5meq/g.The neutral exchange capacity of above-mentioned anion exchanger is in above-mentioned lower limit
When above and below the above-mentioned upper limit, can further suppress the migration in connection structural bodies, further improve insulating reliability.
The median particle diameter of above-mentioned cation exchange column is preferably more than 0.1 μm, more preferably more than 0.5 μm, preferably 10 μ
Below m, more preferably less than 3 μm.The median particle diameter of above-mentioned cation exchange column is more than above-mentioned lower limit and below the above-mentioned upper limit
When, can further suppress the migration in connection structural bodies, further improve insulating reliability.
The median particle diameter of above-mentioned anion exchanger is preferably more than 0.1 μm, more preferably more than 0.5 μm, preferably 10 μ
Below m, more preferably less than 3 μm.The median particle diameter of above-mentioned anion exchanger is more than above-mentioned lower limit and below the above-mentioned upper limit
When, can further suppress the migration in connection structural bodies, further improve insulating reliability.
Relative to the above-mentioned weight portion of curability compound 100, the content of above-mentioned cation exchange column is preferably 0.01 weight
More than part, more than more preferably 0.1 weight portion, it is preferably below 5 amount portions, is more preferably below 4 weight portions.Above-mentioned cation is handed over
When changing the content of body more than above-mentioned lower limit and below the above-mentioned upper limit, can further suppress the migration in connection structural bodies, enter one
Step improves insulating reliability.
Relative to the above-mentioned weight portion of curability compound 100, the content of above-mentioned anion exchanger is preferably 0.01 weight
More than part, more than more preferably 0.1 weight portion, it is preferably below 5 weight portions, is more preferably below 4 weight portions.Above-mentioned anion
When the content of permutoid is more than above-mentioned lower limit and below the above-mentioned upper limit, can further suppress the migration in connection structural bodies, enter
One step improves insulating reliability.
Above-mentioned conductive material is preferably with 9:1~1:9 weight ratio includes above-mentioned cation exchange column and anion exchanger,
More preferably with 8:2~2:8th, further preferably with 6:4~4:6 weight ratio includes above-mentioned cation exchange column and anion exchange
Body.
(electroconductive particle)
Contained electroconductive particle will be electrically connected between the such as the 1st, the electrode of the 2nd connecting object part in above-mentioned conductive material
Connect.As long as above-mentioned electroconductive particle is conductive particle, have no specifically limited.Above-mentioned electroconductive particle is in conduction
The surface of property has conductive part.The surface of the conductive part of electroconductive particle can also be coated by insulating barrier.Electroconductive particle
The surface of conductive part can also be coated by insulating properties particle.In the case of these, when connecting object part is connected, conductive part
Insulating barrier or insulating properties particle between electrode are excluded.
As above-mentioned electroconductive particle, can enumerate for example:With conductive layer (metal level) cladding organic filler, except metallic
The electroconductive particle on the surface of inorganic particulate in addition, organic inorganic hybridization particle or metallic etc. and substantially
Metallic being only made up of metal etc..Above-mentioned electroconductive particle is preferably with conductive layer cladding organic filler, except metallic
Inorganic particulate or the electroconductive particle on the surface of organic inorganic hybridization particle in addition.
Above-mentioned conductive part and above-mentioned metal level are not particularly limited.As the metal for constituting above-mentioned conductive part, can enumerate:
Gold, silver, copper, nickel, palladium and tin etc..As above-mentioned metal level, can enumerate:Layer gold, silver layer, layers of copper, nickel dam, palladium layers and contain tin
Metal level etc..
Contact area from increase electrode and electroconductive particle, further improve the interelectrode viewpoint for turning on reliability and go out
Hair, above-mentioned electroconductive particle preferably has resin particle and conductive layer (the 1st conduction being configured on the surface of the resin particle
Layer).From from the viewpoint of further improving interelectrode conducting reliability, above-mentioned electroconductive particle is preferably at least electric conductivity
Outer surface is the electroconductive particle of low-melting-point metal.More preferably above-mentioned electroconductive particle has resin particle and is configured at the tree
At least outer surface of conductive layer and the conductive layer on the surface of fat granule is low-melting-point metal layer.
Above-mentioned low-melting-point metal layer is the layer comprising low-melting-point metal.The low-melting-point metal represents that fusing point is less than 450 DEG C
Metal.The fusing point of low-melting-point metal is preferably less than 300 DEG C, more preferably less than 160 DEG C.In addition, above-mentioned low-melting-point metal
Preferably comprise tin.In the low-melting-point metal or low-melting-point metal layer in the contained weight % of metal 100, the content of tin is preferably 30
More than weight %, more preferably more than 40 weight %, more preferably more than 70 weight %, particularly preferably more than 90 weight %.
When the content of above-mentioned tin is more than above-mentioned lower limit, the connection reliability between low-melting-point metal and electrode is can further improve.Need
It is noted that the content of above-mentioned tin can (hole makes institute using high-frequency inductive coupling plasma body emission spectrographic analysis device
Company system " ICP-AES ") or x-ray fluorescence analysis device (Shimadzu Seisakusho Ltd.'s company system " EDX-800HS ") etc. be measured.
The outer surface of conductive part be low-melting-point metal in the case of, low-melting-point metal occur melting and and electrode engagement,
Low-melting-point metal is turned between making electrode.For example, because easy formation face contacts between low-melting-point metal and electrode, non-dots is contacted,
Therefore, contact resistance reduction.In addition, be the electroconductive particle of low-melting-point metal by using the outer surface of at least electric conductivity,
Bond strength between low-melting-point metal and electrode is improved, as a result, being more not susceptible between low-melting-point metal and electrode
Peel off, humidity resistance is further improved.
The low-melting-point metal for constituting above-mentioned low-melting-point metal layer is not particularly limited.The low-melting-point metal be preferably tin or
Alloy comprising tin.The alloy can be enumerated:Tin-silver alloy, tin-copper alloy, tin-silver-copper alloy, tin-bismuth alloy electroplating, tin-zinc are closed
Gold, Sn-In alloy.Wherein, because the wetability to electrode is excellent, therefore, above-mentioned low-melting-point metal is preferably tin, Xi-silver and closes
Gold, more preferably tin-silver-copper alloy, tin-bismuth alloy electroplating, Sn-In alloy, tin-bismuth alloy electroplating, Sn-In alloy.
In addition, above-mentioned low-melting-point metal is preferably scolding tin.Above-mentioned low-melting-point metal layer is preferably soldering-tin layer.Constitute the scolding tin
Material be not particularly limited, be preferably based on JIS Z3001:Welding terminology, liquidus curve are less than 450 DEG C of sealing weld material.
As the composition of above-mentioned scolding tin, the metal composition for example comprising zinc, gold, lead, copper, tin, bismuth, indium etc. can be enumerated.Wherein, it is preferably low
Fusing point and lead-free tin-indium class (117 DEG C of eutectics) or Sn-Bi class (139 DEG C of eutectics).That is, scolding tin is not preferably leaded, preferably
It is the scolding tin comprising tin and indium or the scolding tin comprising tin and bismuth.
In order to further improve the bond strength between above-mentioned low-melting-point metal and electrode, above-mentioned low-melting-point metal can be included
The metals such as nickel, copper, antimony, aluminium, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, chromium, molybdenum, palladium.It is golden from low melting point is further improved
From the viewpoint of bond strength between category and electrode, above-mentioned low-melting-point metal preferably comprises nickel, copper, antimony, aluminium or zinc.From entering one
Step is improved from the viewpoint of the bond strength between low-melting-point metal and electrode, contained by low-melting-point metal or low-melting-point metal layer
The weight % of metal 100 in, be used to improve the content of these metals of bond strength be preferably more than 0.0001 weight %, be preferably
Below 1 weight %.
It is preferred that above-mentioned electroconductive particle has resin particle and the conductive layer being configured on the resin particle surface, the conduction
The outer surface of layer is low-melting-point metal layer, and is had between above-mentioned resin particle and above-mentioned low-melting-point metal layer (soldering-tin layer etc.)
Have any different in the 2nd conductive layer of above-mentioned low-melting-point metal layer.In this case, above-mentioned low-melting-point metal layer is that above-mentioned conductive layer is whole
A part for body, above-mentioned 2nd conductive layer is above-mentioned conductive layer part of the whole.It is excellent in the case of using the electroconductive particle
Choosing makes the 2nd conductive layer and electrode contact.
Above-mentioned 2nd conductive layer for being different from above-mentioned low-melting-point metal layer preferably comprises metal.Constitute the gold of the 2nd conductive layer
Category is not particularly limited.As the metal, can enumerate for example:Gold, silver, copper, platinum, palladium, zinc, lead, aluminium, cobalt, indium, nickel, chromium, titanium,
Antimony, bismuth, germanium and cadmium and their alloy etc..In addition, as above-mentioned metal, tin-doped indium oxide (ITO) can be used.It is above-mentioned
Metal can be using only a kind, it is also possible to be applied in combination two or more.
Above-mentioned 2nd conductive layer is preferably nickel dam, palladium layers, layers of copper or layer gold, more preferably nickel dam or layer gold, further preferably
It is layers of copper.Electroconductive particle preferably has nickel dam, palladium layers, layers of copper or layer gold, more preferably with nickel dam or layer gold, further preferably
With layers of copper.Interelectrode connection, interelectrode contact are used for by the electroconductive particle that there will be these preferred conductive layers
Resistance is further reduced.In addition, on the surface of these preferred conductive layers, being more prone to form low-melting-point metal layer.Need
Bright, above-mentioned 2nd conductive layer can also be the low-melting-point metal layers such as soldering-tin layer.Electroconductive particle can also have multilayer eutectic
Point metal level.
The thickness of above-mentioned low-melting-point metal layer is preferably more than 0.1 μm, is more preferably more than 0.5 μm, more preferably 1
More than μm, it is preferably less than 50 μm, more preferably less than 10 μm, more preferably less than 5 μm, particularly preferably less than 3 μm.
When the thickness of above-mentioned low-melting-point metal layer is more than above-mentioned lower limit, electric conductivity is fully improved.The thickness of above-mentioned low-melting-point metal layer
When below the above-mentioned upper limit, the subtractive of the thermal coefficient of expansion between resin particle and low-melting-point metal layer is small, is not susceptible to eutectic
The stripping of point metal level.
In the case that conductive layer has sandwich construction for the situation or conductive layer of the conductive layer beyond low-melting-point metal layer,
The overall thickness of conductive layer be preferably more than 0.1 μm, more preferably more than 0.5 μm, be more preferably more than 1 μm, preferably
Less than 50 μm, more preferably less than 10 μm, more preferably less than 5 μm, particularly preferably less than 3 μm.
Due to for the size of electroconductive particle being suitable in anisotropic conductive material and between further can reducing electrode
Interval, therefore, the average grain diameter of above-mentioned electroconductive particle be preferably more than 0.5 μm, more preferably more than 1 μm, preferably 100
Below μm, it is more preferably less than 20 μm, more preferably less than 15 μm, particularly preferably less than 10 μm, more preferably less than 5 μ
m。
The average grain diameter of above-mentioned electroconductive particle is most preferably 1 μm less than 5 μm.By using conduction of the invention
Material, the average grain diameter of electroconductive particle is less than 5 μm, even if electroconductive particle is small, it is also possible to fully improve connection structural bodies
Connection reliability.
In addition, above-mentioned resin particle can be according to the electrode size of the substrate of actual installation or land diameter (ラ Application De footpath)
Difference is used.
From more effectively by connection between upper/lower electrode and further suppression laterally upper adjacent interelectrode short-circuit sight
Point sets out, the ratio (C/A) of the average grain diameter C of electroconductive particle and the average grain diameter A of resin particle more than 1.0, be preferably 3.0 with
Under.In addition, in the case of there is above-mentioned 2nd conductive layer between above-mentioned resin particle and above-mentioned soldering-tin layer, in addition to soldering-tin layer
Electroconductive particle part average grain diameter B and resin particle average grain diameter A ratio (B/A) more than 1.0, be preferably 2.0 with
Under.Additionally, in the case of there is above-mentioned 2nd conductive layer between above-mentioned resin particle and above-mentioned soldering-tin layer, comprising soldering-tin layer
The ratio (C/B) of the average grain diameter C of the electroconductive particle and average grain diameter B of the electroconductive particle part in addition to soldering-tin layer is more than
1.0th, less than 2.0 are preferably.It is above-mentioned than (B/A) within the above range or it is above-mentioned than (C/B) within the above range when, Neng Gougeng
For effectively by connection between upper/lower electrode and further suppression laterally upper adjacent interelectrode short circuit.
It is suitable to the conductive material (anisotropic conductive material) of FOB and FOF purposes:
Above-mentioned conductive material is applied to connection (FOB (the Film on of flexible printing substrate and glass epoxy substrate
Board connection or the connection (FOF (Film on Film)) of flexible printing substrate and flexible printing substrate)).
In FOB and FOF purposes, there is the part (line) of electrode and the size i.e. L& of the part (gap) in the absence of electrode
S is usually 100~500 μm.The average grain diameter of the resin particle used in FOB and FOF purposes is preferably 10~100 μm.Tree
When the average grain diameter of fat granule is more than 10 μm, the thickness for being configured at interelectrode conductive material and connecting portion is sufficiently thick, bonding
Power is further improved.When the average grain diameter of resin particle is below 100 μm, more it is difficult to be short-circuited between adjacent electrode.
It is suitable to the conductive material (anisotropic conductive material) of flip-chip purposes:
Above-mentioned conductive material is applied to flip-chip purposes.
In flip-chip purposes, land diameter is usually 15~80 μm.The resin particle used in flip-chip purposes
Average grain diameter is preferably 1~15 μm.When the average grain diameter of resin particle is more than 1 μm, can make to be configured at the resin particle surface
On soldering-tin layer thickness it is sufficiently thick, can more effectively will between electrode electrically connect.The average grain diameter of resin particle is 10 μm
When following, more it is difficult to be short-circuited between adjacent electrode.
It is suitable to the conductive material (anisotropic conductive material) of COF:
Above-mentioned conductive material is applied to the connection (COF (Chip on Film)) of semiconductor chip and flexible printing substrate.
In COF purposes, there is the part (line) of electrode and usual in the absence of the size i.e. L&S of the part (gap) of electrode
It is 10~50 μm.The average grain diameter of the resin particle used in COF purposes is preferably 1~10 μm.The average grain of resin particle
When footpath is more than 1 μm, the thickness of the soldering-tin layer being configured on the resin particle surface can be made sufficiently thick, can more effectively will
Electrically connected between electrode.When the average grain diameter of resin particle is below 10 μm, more it is difficult to be short-circuited between adjacent electrode.
" average grain diameter " of above-mentioned electroconductive particle and above-mentioned resin particle represents number average bead diameter.Electroconductive particle it is average
Particle diameter can be obtained as follows:Any 50 electroconductive particles are observed using electron microscope or light microscope, and
Calculate its average value.
Ins. ulative material, insulating properties particle, solder flux etc. can also be utilized to the surface of the conductive part of above-mentioned electroconductive particle
Carry out insulation processing.It is preferred that Ins. ulative material, insulating properties particle, solder flux etc. can occur to soften, flow under the heat effect in connection
It is dynamic, so as to be excluded from connecting portion.Thus, interelectrode short circuit can be suppressed.
The content of above-mentioned electroconductive particle is not particularly limited.In the weight % of above-mentioned conductive material 100, above-mentioned electric conductivity
The content of particle is preferably more than 0.1 weight %, more preferably more than 0.5 weight %, more preferably more than 1 weight %, preferably
It is below 40 weight %, more preferably below 30 weight %, more preferably below 19 weight %.Above-mentioned electroconductive particle contains
When amount is more than above-mentioned lower limit and below the above-mentioned upper limit, electroconductive particle can be easily configured at the upper/lower electrode to be connected
Between.Also, it is difficult to be electrically connected via multiple electroconductive particles between being not intended to the adjacent electrode of connection.That is, can be further
Prevent the short circuit between adjacent electrode.
(solder flux)
Above-mentioned conductive material can also include solder flux.By using the solder flux, can effectively remove and be formed at electrode table
The oxide-film in face.As a result, the conducting reliability of connection structural bodies is further improved.It should be noted that above-mentioned conductive material
It is not necessary to containing solder flux.
Above-mentioned solder flux is not particularly limited.As the solder flux, the solder flux being typically used in scolding tin engagement etc. is usable in.
As above-mentioned solder flux, can enumerate for example:The mixture of zinc chloride, zinc chloride and inorganic halides, zinc chloride and inorganic acid it is mixed
Compound, fuse salt, phosphoric acid, the derivative of phosphoric acid, organohalogen compounds, hydrazine, organic acid and rosin etc..Above-mentioned solder flux can be using only
1 kind, it is also possible to be applied in combination two or more.
As above-mentioned fuse salt, ammonium chloride etc. can be enumerated.As above-mentioned organic acid, lactic acid, citric acid, stearic acid can be enumerated
And glutamic acid etc..As above-mentioned rosin, activation rosin and disactivation rosin etc. can be enumerated.Above-mentioned solder flux is preferably rosin.Pass through
Using rosin, interelectrode contact resistance is further reduced.
Above-mentioned rosin is the rosin with rosin acid as principal component.Above-mentioned solder flux is preferably rosin, more preferably rosin
Acid.By using the preferred solder flux, interelectrode contact resistance is further reduced.
Above-mentioned solder flux can be scattered in adhesive resin, it is also possible to be attached on the surface of above-mentioned electroconductive particle.
In the weight % of above-mentioned conductive material 100, the content of above-mentioned solder flux is preferably more than 0.5 weight %, is preferably 30 weights
Amount below %, more preferably below 25 weight %.When the content of above-mentioned solder flux is more than above-mentioned lower limit and below the above-mentioned upper limit, can
More effectively remove the oxide-film for being formed at electrode surface.In addition, when the content of above-mentioned solder flux is more than above-mentioned lower limit, can be more
Effectively to show the additive effect of solder flux.When the content of above-mentioned solder flux is below the above-mentioned upper limit, the hygroscopicity of solidfied material is entered
One step reduction, the reliability of connection structural bodies is further improved.
(other compositions)
Above-mentioned conductive material preferably comprises filler.By using filler, the linear heat of the solidfied material of conductive material can be suppressed
The coefficient of expansion.As the concrete example of above-mentioned filler, can enumerate:Silica, aluminium nitride, aluminum oxide, glass, boron nitride, nitridation
Silicon, organosilicon (silicone), carbon, graphite, Graphene and talcum etc..Filler can be using only a kind, it is also possible to by two or more
It is applied in combination.During using thermal conductivity factor filler high, main hardening time can be shortened.
Above-mentioned conductive material can also include solvent.By using the solvent, can easily to the viscosity of conductive material
It is adjusted.As above-mentioned solvent, can enumerate for example:Ethyl acetate, methyl cellosolve, toluene, acetone, methyl ethyl ketone, ring
Hexane, n-hexane, tetrahydrofuran and ether etc..
(details and purposes of conductive material)
Conductive material of the invention is preferably anisotropic conductive material.Conductive material of the invention is preferably used for electrode
Electrical connection conductive material.Conductive material of the invention is also preferably the electricity for electrode in organic field luminescence display element
The conductive material of connection.Conductive material of the invention is pasty state or membranaceous conductive material, the preferably conductive material of pasty state.Paste
The conductive material of shape is electroconductive paste.Membranaceous conductive material is conducting film.In the case that conductive material is conducting film, can be at this
Film of the conducting film superimposed layer comprising electroconductive particle without electroconductive particle.Above-mentioned electroconductive paste is preferably anisotropic conductive
Paste.Above-mentioned conducting film is preferably anisotropic conductive film.
It is preferred that conductive material of the invention is electroconductive paste, and it is that the conduction on connecting object part is coated with paste state
Paste.
Viscosity of the above-mentioned electroconductive paste at 25 DEG C is preferably more than 20Pas, more preferably more than 100Pas, is preferably
Below 1000Pas, more preferably below 700Pas, more preferably below 600Pas.Above-mentioned viscosity is under above-mentioned
During the limit above, electroconductive particle can be suppressed and settled in electroconductive paste.When above-mentioned viscosity is below the above-mentioned upper limit, electric conductivity grain
The dispersiveness of son is further improved.If the above-mentioned viscosity of above-mentioned electroconductive paste before coating is within the above range, by conduction
After muddle is distributed on the 1st connecting object part, can further suppress to solidify the flowing of preceding electroconductive paste, and then more be difficult to produce
Raw space.Viscosity of the above-mentioned electroconductive paste at 25 DEG C can also be below 300Pas.It should be noted that pasty state also includes liquid
Shape.
Conductive material of the invention is preferably used for the conductive material of the connecting object part connection with copper electrode.Make
In the case of connecting the connecting object part with copper electrode with conductive material, exist easily because of the copper electrode in connection structural bodies
And trigger the problem of migration.In this regard, by using conductive material of the invention, even if by the connecting object part with copper electrode
Connection, it is also possible to effectively suppress the migration in connection structural bodies, insulating reliability can be effectively improved.
Conductive material of the invention can be used to be bonded various connecting object parts.Above-mentioned conductive material be suitable for obtain by
1st, the connection structural bodies of the 2nd connecting object part electrical connection.Above-mentioned conductive material is preferably for obtaining by the 1st, the 2nd
The connection structural bodies electrically connected between the electrode of connecting object part.
Fig. 1 shows the one of the connection structural bodies of the conductive material for having used an embodiment of the present invention with front section view
Example.
Connection structural bodies 1 shown in Fig. 1 possesses:1st connecting object part 2, the 2nd connecting object part 4 and by the 1st,
The connecting portion 3 of the electrical connection of the 2nd connecting object part 2,4.Connecting portion 3 is solidified material layer, by making leading comprising electroconductive particle 5
Electric material is solidified to form.Connecting portion 3 is preferably solidified to form by making anisotropic conductive material.
1st connecting object part 2 has the 1st electrode 2b of multiple in surface 2a (above).2nd connecting object part 4 is in table
Face 4a (below) has the 2nd electrode 4b of multiple.1st electrode 2b and the 2nd electrode 4b are real by one or more electroconductive particles 5
Now electrically connect.Therefore, the 1st, the 2nd connecting object part 2,4 realizes electrical connection by electroconductive particle 5.
Connection between the 1st, the 2nd electrode 2b, 4b can generally be carried out as follows:1st connecting object part the 2 and the 2nd is connected right
As part 4 is overlapped across conductive material and makes the 1st, the 2nd electrode 2b, 4b toward each other, then, solidify conductive material is made
Shi Jinhang pressurizes, and is thus attached.By pressurization, electroconductive particle 5 is generally compressed.
1st, the 2nd connecting object part is not particularly limited.As the 1st, the 2nd connecting object part, can specifically enumerate:Half
The circuit base such as the electronic units such as conductor chip, capacitor and diode and printed base plate, flexible printing substrate and glass substrate
Electronic units such as plate etc..Above-mentioned conductive material is preferably the conductive material that can be used for the connection of electronic unit.
Connection structural bodies 1 shown in Fig. 1 for example can be by the state shown in Fig. 2 (a)~(c), obtain as described below.
As shown in Fig. 2 (a), preparing surface 2a (above) has the 1st connecting object part 2 of the 1st electrode 2b.Then, exist
The conductive material of the 2a configurations in surface comprising multiple electroconductive particles 5 of the 1st connecting object part 2, in the 1st connecting object part 2
Surface 2a form conductive material layer 3A.Now, one or more electroconductive particles 5 are preferably configured on the 1st electrode 2b.
Then, illumination is carried out by conductive material layer 3A, enabling the solidification of conductive material layer 3A is carried out.In Fig. 2 (a)
In~(c), illumination is carried out to conductive material layer 3A, so that the solidification of conductive material layer 3A is carried out, so that conductive material
Layer 3A carries out B-staged.That is, as shown in Fig. 2 (b), formed in the surface 2a of the 1st connecting object part 2 and have passed through leading for B-staged
Material layer 3B.By carrying out B-staged, the 1st connecting object part 2 and the conductive material layer 3B that have passed through B-staged occur accurate viscous
Connect.The conductive material layer 3B that have passed through B-staged is the semi-solid preparation thing in semi-cured state.Have passed through the conductive material of B-staged
Layer 3B is not fully cured, and can further carry out heat cure.But can not also make conductive material layer 3A carries out B-staged, but to leading
Material layer 3A carries out illumination or conductive material layer 3A is heated, so that conductive material layer 3A disposal solidifyings.
In order that the solidification of conductive material layer 3A is effectively carried out, intensity of illumination when carrying out illumination preferably 0.1~
8000mW/cm2In the range of.Accumulated light is preferably 0.1~20000J/cm2.Light source for used during illumination does not have
Have specifically limited.Used as the light source, can enumerate for example has sufficiently light source of luminous distribution etc. in below wavelength 420nm.Separately
Outward, as the concrete example of light source, can enumerate for example:Cooper-Hewitt lamp, middle medium pressure mercury lamp, high-pressure mercury-vapor lamp, extra-high-pressure mercury vapour lamp,
Chemical lamp, black light lamp, microwave-excitation mercury vapor lamp, metal halide lamp and LED etc..
Then, as shown in Fig. 2 (c), the connection of 3a laminations the 2nd is right above the conductive material layer 3B that have passed through B-staged
As part 4.So that the of the surface 4a of the 1st electrode 2b of the surface 2a of the 1st connecting object part 2 and the 2nd connecting object part 4
The 2 electrode 4b relative connecting object part 4 of mode lamination the 2nd.
Further, in the 2nd connecting object part 4 of lamination, added by the conductive material layer 3B that have passed through B-staged
Heat, makes the conductive material layer 3B that have passed through B-staged further solidify, and forms connecting portion 3.It should be noted that can also be folded
The conductive material layer 3B that have passed through B-staged is heated before the connecting object part 4 of layer the 2nd.In addition it is also possible in lamination
The conductive material layer 3B that have passed through B-staged is heated after 2 connecting object parts 4.
Heating-up temperature when making conductive material layer 3A by heating or have passed through the conductive material layer 3B solidifications of B-staged is preferred
For more than 50 DEG C, more preferably more than 80 DEG C, more preferably more than 100 DEG C, still more preferably be more than 140 DEG C, spy
Not You Xuanwei more than 160 DEG C, be preferably less than 250 DEG C, be more preferably less than 200 DEG C.Conductive material of the invention is used for organic
In the case of the electrical connection of the electrode of electroluminescent display element, make above-mentioned conductive material layer 3A or have passed through leading for B-staged
When material layer 3B solidifies, heating-up temperature can be less than 120 DEG C.
When solidifying the conductive material layer 3B that have passed through B-staged, preferably pressurizeed.By being pressurizeed, with the 1st electrode
2b and the 2nd electrode 4b compression conductives particle 5, thus can make the contact between the 1st, the 2nd electrode 2b, 4b and electroconductive particle 5
Area increases.Thus, conducting reliability can be improved.In addition, be compressed by electroconductive particle 5, even if the 1st, the 2nd electrode
Distance between 2b, 4b expands, it is also possible to which the particle diameter and the expansion for making electroconductive particle 5 increase with mutually following.
Solidified by the conductive material layer 3B for making to have passed through B-staged, the 1st connecting object part 2 and the 2nd connecting object part
4 connect via connecting portion 3.Also, the 1st electrode 2b and the 2nd electrode 4b realize electrical connection via electroconductive particle 5.So
One, the connection structural bodies 1 shown in the Fig. 1 for having used conductive material can be obtained.Here, due to being applied in combination photocuring and heat
Solidification, therefore conductive material can be made to solidify in a short time.
Conductive material of the invention can be used for connection (FOG (the Film on of such as flexible printing substrate and glass substrate
Glass)), the connection (COF (Chip on Film)) of semiconductor chip and flexible printing substrate, semiconductor chip and glass base
The connection (COG (Chip on Glass)) of plate or connection (FOB (the Film on of flexible printing substrate and glass epoxy substrate
Board)) etc..Wherein, above-mentioned conductive material is applied to FOG purposes or COG purposes, is more suitable for COG purposes.It is of the invention to lead
Electric material is preferably the connection of connection or semiconductor chip and the glass substrate that can be used for flexible printing substrate and glass substrate
Conductive material, more preferably for flexible printing substrate and glass substrate connection conductive material.
In connection structural bodies of the invention, above-mentioned 2nd connecting object part and above-mentioned 1st connecting object part are preferably and scratch
Property printed base plate and glass substrate or it is semiconductor chip and glass substrate, more preferably flexible printing substrate and glass base
Plate.
In addition, connection structural bodies of the invention is also preferably organic field luminescence display element.Above-mentioned organic field luminescence
The electrode of display element can realize electrical connection by the electroconductive particle included in above-mentioned conductive material.
It is preferred that at least one of above-mentioned 1st electrode and above-mentioned 2nd electrode are copper electrode.It is preferred that above-mentioned 1st electrode and on
Both the 2nd electrodes are stated for copper electrode.In this case, can further obtain by conductive material of the invention bring to migration
Inhibition, the insulating reliability of connection structural bodies is further improved.
Electrode width (the 1st electrode width and the 2nd electrode width) be preferably more than 5 μm, more preferably more than 10 μm, preferably
It is less than 500 μm, more preferably less than 300 μm.Width (width between width and the 2nd electrode between the 1st electrode) is preferably 3 between electrode
More than μm, it is more preferably more than 10 μm, is preferably less than 500 μm, more preferably less than 300 μm.In addition, electrode width/electrode
Between width be L/S (line/spacing) be preferably 5 μm/more than 5 μm, more preferably 10 μm/more than 10 μm, preferably 500 μm/500 μm
Below, more preferably 300 μm/less than 300 μm.
It should be noted that in recent years, width is L/S (line/spacing) between the electrode width/electrode of above-mentioned connection structural bodies
Further diminish.The L/S of the electrode of above-mentioned connection structural bodies is smaller, then the easier generation defective insulation when migrating.With
This is relative, by using conductive material of the invention, even fine electrode is connected, it is also possible to effectively suppress insulation not
Good generation, can substantially ensure that insulating reliability.
Hereinafter, in conjunction with the embodiments, comparative example and reference example be specifically described to the present invention.The present invention is not limited to down
State embodiment.
Following material has been used in embodiment and comparative example.
(ion exchanger)
(1) IXE-100 (Zr cationoids permutoid, neutral exchange capacity 3.3meq/g, East Asia Synesis Company system)
(2) IXE-700F (Mg-Al anionoids permutoid, neutral exchange capacity 4.5meq/g, East Asia Synesis Company system)
(3) IXE-300 (Sb cationoids permutoid, neutral exchange capacity 2.3meq/g, East Asia Synesis Company system)
(4) IXE-500 (Bi anionoids permutoid, neutral exchange capacity 1.8meq/g, East Asia Synesis Company system)
(5) IXE-530 (Bi anionoids permutoid, neutral exchange capacity 1.8meq/g, East Asia Synesis Company system)
(6) IXE-633 (Sb, Bi class amphion permutoid, neutral exchange capacity 1.8meq/g, East Asia Synesis Company system)
(embodiment 1)
(1) preparation of anisotropic conductive material:
To bisphenol A modified epoxy resin (DIC company systems " EPICLON EXA-4850-150 ") 40 weight portions and Bisphenol F ring
Added in oxygen tree fat (DIC company systems " EXA-835LV ") 30 weight portions as SI-60L (the three new chemistry public affairs of cation propellant
Take charge of manufacture Sun-aid) 3 weight portions, epoxy acrylate (the Daicel Cytec company systems as photocurable compound
" EBECRYL3702 ") 20 weight portions, acylphosphine oxide class compound (the Ciba Japan company systems as trigger for optical solidification
" DAROCURTPO ") 1 weight portion, as filler 0.25 μm of average grain diameter the weight portion of silica 10,10 μm of average grain diameter
Electroconductive particle A4 weight portions and above-mentioned (1) IXE-100 (East Asia Synesis Company system) 1 weight portion as ion exchanger,
1 weight portion of above-mentioned (2) IXE-700F (East Asia Synesis Company system), is stirred 5 minutes using planetary stirring machine with 2000rpm, by
This has obtained anisotropic conductive paste.It should be noted that the electroconductive particle A for being used is that have in divinylbenzene resin
The surface of particle is formed with nickel coating and the electroconductive particle of the metal level of Gold plated Layer is formed with the surface of the nickel coating.
(2) making of connection structural bodies (FOG):
It is 50 μm/50 μm, glass substrate (the 1st connection of the aluminium electrode pattern of a length of 1mm to have prepared to be formed with L/S above
Object Part).In addition, having prepared to be formed below L/S for 50 μm/50 μm, a length of 2mm have passed through gold-plated Cu electrode patterns
Flexible printing substrate (the 2nd connecting object part).
Using distributor the anisotropic conductive for just having made is coated on above-mentioned glass substrate with 1.5mm wide, thick 40 μm
Paste, forms anisotropic conductive paste layer.Then, the mode lamination in anisotropic conductive paste layer to make electrode relative to each other
Above-mentioned flexible printing substrate.With 3000mW/cm2Intensity of illumination irradiation 365nm ultraviolet 3 seconds, made respectively by photopolymerization
Anisotropy conductive paste layer semi-solid preparation, has carried out B-staged.Then, using bridge manufacturing company system " BD-02 ", side adjustment heating
The temperature of pressure head causes that the temperature of anisotropic conductive paste layer reaches 170 DEG C (main pressing-in temps), while in flexible printing substrate
The pressure head of mounting pressurization above, applies the pressure of 1MPa, in making anisotropic conductive paste layer solidify at 170 DEG C 5 seconds, is connected
Connect structure.
(embodiment 2)
Except the use level of above-mentioned (1) IXE-100 is changed into 0.01 weight portion and by above-mentioned (2) IXE-700F's
Use level is changed to beyond 0.01 weight portion, carries out operation same as Example 1, has obtained anisotropic conductive paste.Use
Gained anisotropic conductive is pasted, and carries out operation same as Example 1, has obtained connection structural bodies.
(embodiment 3)
Except the use level of above-mentioned (1) IXE-100 is changed into 5 weight portions and the cooperation by above-mentioned (2) IXE-700F
Beyond quantitative change more 5 weight portions, operation same as Example 1 is carried out, obtained anisotropic conductive paste.Use gained it is each to
Different in nature electroconductive paste, carries out operation same as Example 1, has obtained connection structural bodies.
(embodiment 4)
In addition to above-mentioned (2) IXE-700F is changed into above-mentioned (4) IXE-500 (East Asia Synesis Company system), carry out with
The identical of embodiment 1 is operated, and has obtained anisotropic conductive paste.Use gained anisotropic conductive paste, is carried out and the phase of embodiment 1
Same operation, has obtained connection structural bodies.
(embodiment 5)
Except above-mentioned (1) IXE-100 is changed into above-mentioned (3) IXE-300 (East Asia Synesis Company system) and will be above-mentioned
(2) IXE-700F is changed to beyond above-mentioned (4) IXE-500 (East Asia Synesis Company system), carries out operation same as Example 1,
Anisotropic conductive paste is obtained.Use gained anisotropic conductive paste, carries out operation same as Example 1, is connected
Connect structure.
(embodiment 6)
Except above-mentioned (1) IXE-100 is changed into above-mentioned (3) IXE-300 (East Asia Synesis Company system) and will be above-mentioned
(2) IXE-700F is changed to beyond above-mentioned (5) IXE-530 (East Asia Synesis Company system), carries out operation same as Example 1,
Anisotropic conductive paste is obtained.Use gained anisotropic conductive paste, carries out operation same as Example 1, is connected
Connect structure.
(comparative example 1)
In addition to being not added with above-mentioned (1) IXE-100 and above-mentioned (2) both IXE-700F, carry out same as Example 1
Operation, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 1, obtains
Connection structural bodies is arrived.
(comparative example 2)
In addition to being not added with above-mentioned (1) IXE-100, operation same as Example 1 is carried out, obtained anisotropy and led
Electricity paste.Use gained anisotropic conductive paste, carries out operation same as Example 1, has obtained connection structural bodies.
(comparative example 3)
In addition to being not added with above-mentioned (2) IXE-700F, operation same as Example 1 is carried out, obtained anisotropy
Electroconductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 1, has obtained connection structural bodies.
(comparative example 4)
Except being not added with above-mentioned (1) IXE-100 and above-mentioned (2) both IXE-700F, but with the addition of IXE-633 (east
Sub- Synesis Company's system) beyond 2 weight portions, operation same as Example 1 is carried out, obtain anisotropic conductive paste.Using institute
Anisotropic conductive paste is obtained, operation same as Example 1 is carried out, connection structural bodies has been obtained.
(reference example 1)
Except being not added with SI-60L as cation propellant, with the addition of thermal curing agents (imidazolium compounds, four countries' chemical conversion
Industrial group's system " 2P-4MZ ") beyond 10 weight portions, operation same as Example 1 is carried out, obtain anisotropic conductive paste.
Use gained anisotropic conductive paste, carries out operation same as Example 1, has obtained connection structural bodies.
(reference example 2)
Except being not added with SI-60L as cation propellant, with the addition of thermal curing agents (imidazolium compounds, four countries' chemical conversion
Industrial group's system " 2P-4MZ ") 10 weight portions and be not added with above-mentioned (1) IXE-100 and above-mentioned (2) both IXE-700F with
Outward, operation same as Example 1 is carried out, anisotropic conductive paste has been obtained.Use gained anisotropic conductive paste, carry out with
The identical of embodiment 1 is operated, and has obtained connection structural bodies.
(evaluation of embodiment 1~6, comparative example 1~4 and reference example 1,2)
(1) conducting reliability (contact resistance value)
Determine the contact resistance between the upper/lower electrode of gained connection structural bodies respectively using four-end method.100 are calculated
The average value of the contact resistance at position.It should be noted that according to the relation of voltage=electric current × resistance, perseverance is flowed through by determining
Determine voltage during electric current, contact resistance can be obtained.The conducting reliability of gained connection structural bodies is carried out with following standards
Judge.
[criterion of conducting reliability]
○○:Less than 3 Ω
○:3 Ω are less than 5 Ω
×:5 more than Ω
(2) moisture proof insulation reliability
Voltage applying 20V between the measure terminal insulated from each other of gained connection structural bodies, in this case in 85
DEG C and the atmosphere of 85%RH in expose 500 hours, during this period, determine the resistance change between measure terminal.By resistance value
It is 105The situation of below Ω is judged as defective insulation.Moisture proof insulation reliability is judged according to following standards.
[criterion of moisture proof insulation reliability]
○○:In 10 connection structural bodies, the connection structural bodies of defective insulation, and moisture proof insulation reliability are not there occurs
Property experiment after average resistance be 107More than Ω
○:In 10 connection structural bodies, the connection structural bodies of defective insulation, and moisture proof insulation reliability are not there occurs
Average resistance after experiment is 106Ω is less than 107Ω
△:In 10 connection structural bodies, the connection structural bodies of defective insulation, and moisture proof insulation reliability are not there occurs
Average resistance after experiment is 105Ω is less than 106Ω
×:In 10 connection structural bodies, there occurs the connection structural bodies of defective insulation has more than 1
Result is as described in Table 1.
[table 1]
Conducting reliability | Moisture proof insulation reliability | |
Embodiment 1 | ○○ | ○○ |
Embodiment 2 | ○○ | Δ |
Embodiment 3 | ○ | ○○ |
Embodiment 4 | ○○ | Δ |
Embodiment 5 | ○○ | Δ |
Embodiment 6 | ○○ | Δ |
Comparative example 1 | ○○ | × |
Comparative example 2 | ○○ | × |
Comparative example 3 | ○○ | × |
Comparative example 4 | ○○ | × |
Reference example 1 | ○ | ○○ |
Reference example 2 | ○ | ○○ |
(embodiment 7)
(1) making of electroconductive particle:
To 10 μm of divinylbenzene resin particle (ponding chemical industrial company system, Micropearl SP- of average grain diameter
210) process for electroless nickel plating is carried out, thick 0.1 μm substrate nickel coating is formd on the surface of resin particle.Then, to being formed with
The resin particle of substrate nickel coating carries out electrolytic copper plating, forms thick 1 μm layers of copper.Then, the electrolysis containing tin and bismuth is used
Plating solution is electroplated, and forms thick 1 μm soldering-tin layer.Thus, made and thick 1 μm copper has been formed with the surface of resin particle
Layer and it is formed with thick 1 μm of soldering-tin layer (tin on the surface of the layers of copper:Bismuth=43 weight %:57 weight %) electroconductive particle B.
(2) preparation of anisotropic conductive material:
To bisphenol A modified epoxy resin (DIC company systems " EPICLON EXA-4850-150 ") 40 weight portions and Bisphenol F ring
Added in oxygen tree fat (DIC company systems " EXA-835LV ") 30 weight portions as SI-60L (the three new chemistry public affairs of cation propellant
Take charge of manufacture Sun-aid) 3 weight portions, epoxy acrylate (the Daicel Cytec company systems as photocurable compound
" EBECRYL3702 ") 20 weight portions, acylphosphine oxide class compound (the Ciba Japan company systems as trigger for optical solidification
" DAROCUR TPO ") 1 weight portion, as filler 0.25 μm of average grain diameter the weight portion of silica 10, the pine as solder flux
(East Asia synthesis is public for fragrant 3 weight portions, gained electroconductive particle B4 weight portions and above-mentioned (1) IXE-100 as ion exchanger
Department system) 1 weight portion, above-mentioned (2) IXE-700F (East Asia Synesis Company system) 1 weight portion, using planetary stirring machine with 2000rpm
Stirring 5 minutes, has obtained anisotropic conductive paste.
(2) making of connection structural bodies (FOB)
L/S is prepared to be formed with above for 100 μm/100 μm, the glass that have passed through gold-plated Cu electrode patterns of a length of 4mm
Glass epoxy substrate (the 1st connecting object part).In addition, having prepared to be formed below L/S for 100 μm/100 μm, the warp of a length of 4mm
The flexible printing substrate (the 2nd connecting object part) of gold-plated Cu electrode patterns is crossed.
Using distributor the anisotropic conductive for just having made is coated on above-mentioned glass substrate with 1.5mm wide, thick 40 μm
Paste, forms anisotropic conductive paste layer.Then, the mode lamination in anisotropic conductive paste layer to make electrode relative to each other
Above-mentioned flexible printing substrate.With 3000mW/cm2Intensity of illumination irradiation 365nm ultraviolet 3 seconds, made respectively by photopolymerization
Anisotropy conductive paste layer semi-solid preparation, has carried out B-staged.Then, using bridge manufacturing company system " BD-02 ", side adjustment heating
The temperature of pressure head causes that the temperature of anisotropic conductive paste layer reaches 170 DEG C (main pressing-in temps), while in flexible printing substrate
The pressure head of mounting pressurization above, applies the pressure of 1MPa, in making anisotropic conductive paste layer solidify at 170 DEG C 5 seconds, is connected
Connect structure.
(embodiment 8)
Except the use level of above-mentioned (1) IXE-100 is changed into 0.01 weight portion and by above-mentioned (2) IXE-700F's
Use level is changed to beyond 0.01 weight portion, carries out operation same as Example 7, has obtained anisotropic conductive paste.Use
Gained anisotropic conductive is pasted, and carries out operation same as Example 7, has obtained connection structural bodies.
(embodiment 9)
Except the use level of above-mentioned (1) IXE-100 is changed into 5 weight portions and the cooperation by above-mentioned (2) IXE-700F
Beyond quantitative change more 5 weight portions, operation same as Example 7 is carried out, obtained anisotropic conductive paste.Use gained it is each to
Different in nature electroconductive paste, carries out operation same as Example 7, has obtained connection structural bodies.
(embodiment 10)
In addition to above-mentioned (2) IXE-700F is changed into above-mentioned (4) IXE-500 (East Asia Synesis Company system), carry out with
The identical of embodiment 7 is operated, and has obtained anisotropic conductive paste.Use gained anisotropic conductive paste, is carried out and the phase of embodiment 7
Same operation, has obtained connection structural bodies.
(embodiment 11)
Except above-mentioned (1) IXE-100 is changed into above-mentioned (3) IXE-300 (East Asia Synesis Company system) and will be above-mentioned
(2) IXE-700F is changed to beyond above-mentioned (4) IXE-500 (East Asia Synesis Company system), carries out operation same as Example 7,
Anisotropic conductive paste is obtained.Use gained anisotropic conductive paste, carries out operation same as Example 7, is connected
Connect structure.
(embodiment 12)
Except above-mentioned (1) IXE-100 is changed into above-mentioned (3) IXE-300 (East Asia Synesis Company system) and will be above-mentioned
(2) IXE-700F is changed to beyond above-mentioned (5) IXE-530 (East Asia Synesis Company system), carries out operation same as Example 7,
Anisotropic conductive paste is obtained.Use gained anisotropic conductive paste, carries out operation same as Example 7, is connected
Connect structure.
(embodiment 13)
In addition to the unmated rosin as solder flux, operation same as Example 7 is carried out, obtained anisotropy and led
Electricity paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, has obtained connection structural bodies.
(embodiment 14)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, behaviour same as Example 7 is carried out
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(embodiment 15)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, behaviour same as Example 8 is carried out
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(embodiment 16)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, behaviour same as Example 9 is carried out
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(embodiment 17)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, behaviour same as in Example 10 is carried out
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(embodiment 18)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, grasped with the identical of embodiment 11
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(embodiment 19)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, grasped with the identical of embodiment 12
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(embodiment 20)
Except by the species and use level of heat-curable compounds by bisphenol A modified epoxy resin (DIC company systems " EPICLON
EXA-4850-150 ") 40 weight portions and bisphenol F epoxy resin (DIC company systems " EXA-835LV ") 30 weight portions are changed to bis-phenol
E epoxy resin (Printec company systems " R1710 ") 70 weight portions and above-mentioned electroconductive particle B is changed to above-mentioned electric conductivity
Beyond particle A, operation same as Example 7 is carried out, obtained anisotropic conductive paste.Use gained anisotropic conductive
Paste, carries out operation same as Example 7, has obtained connection structural bodies.
(embodiment 21)
Except the species of cation propellant is changed into CXC- by SI-60L (Sun-aid that three new chemical companies manufacture)
1612 K-PURE of manufacture (this chemical conversion of nanmu companies) and by above-mentioned electroconductive particle B be changed to above-mentioned electroconductive particle A with
Outward, operation same as Example 7 is carried out, anisotropic conductive paste has been obtained.Use gained anisotropic conductive paste, carry out with
The identical of embodiment 7 is operated, and has obtained connection structural bodies.
(comparative example 5)
In addition to being not added with above-mentioned (1) IXE-100 and above-mentioned (2) both IXE-700F, carry out same as Example 7
Operation, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies is arrived.
(comparative example 6)
In addition to being not added with above-mentioned (1) IXE-100, operation same as Example 7 is carried out, obtained anisotropy and led
Electricity paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, has obtained connection structural bodies.
(comparative example 7)
In addition to being not added with above-mentioned (2) IXE-700F, operation same as Example 7 is carried out, obtained anisotropy
Electroconductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, has obtained connection structural bodies.
(comparative example 8)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, grasped with the identical of comparative example 5
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(comparative example 9)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, grasped with the identical of comparative example 6
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(comparative example 10)
In addition to above-mentioned electroconductive particle B is changed into above-mentioned electroconductive particle A, grasped with the identical of comparative example 7
Make, obtained anisotropic conductive paste.Use gained anisotropic conductive paste, carries out operation same as Example 7, obtains
Connection structural bodies.
(comparative example 11)
Except being not added with above-mentioned (1) IXE-100 and above-mentioned (2) both IXE-700F, but with the addition of IXE-633 (east
Sub- Synesis Company's system) beyond 2 weight portions, operation same as Example 7 is carried out, obtain anisotropic conductive paste.Using institute
Anisotropic conductive paste is obtained, operation same as Example 7 is carried out, connection structural bodies has been obtained.
(reference example 3)
Except being not added with SI-60L as cation propellant, with the addition of thermal curing agents (imidazolium compounds, four countries' chemical conversion
Industrial group's system " 2P-4MZ ") beyond 10 weight portions, operation same as Example 7 is carried out, obtain anisotropic conductive paste.
Use gained anisotropic conductive paste, carries out operation same as Example 7, has obtained connection structural bodies.
(reference example 4)
Except being not added with SI-60L as cation propellant, with the addition of thermal curing agents (imidazolium compounds, four countries' chemical conversion
Industrial group's system " 2P-4MZ ") 10 weight portions and be not added with above-mentioned (1) IXE-100 and above-mentioned (2) both IXE-700F with
Outward, operation same as Example 7 is carried out, anisotropic conductive paste has been obtained.Use gained anisotropic conductive paste, carry out with
The identical of embodiment 7 is operated, and has obtained connection structural bodies.
(evaluation of embodiment 7~21, comparative example 5~11 and reference example 3,4)
(1) conducting reliability (contact resistance value)
Determine the contact resistance between the upper/lower electrode of gained connection structural bodies respectively using four-end method.10 companies are calculated
Connect the average value of the contact resistance of structure.It should be noted that according to the relation of voltage=electric current × resistance, being flowed by determining
Voltage during constant current is crossed, contact resistance can be obtained.The conducting reliability of gained connection structural bodies is entered with following standards
Judgement is gone.
[criterion of conducting reliability]
○○:Less than 8 Ω
○:8 Ω are less than 10 Ω
×:10 more than Ω
(2) moisture proof insulation reliability
Voltage applying 15V between the measure terminal insulated from each other of gained connection structural bodies, in this case in 85
DEG C and the atmosphere of 85%RH in expose 500 hours, during this period, determine the resistance change between measure terminal.By resistance value
It is 105The situation of below Ω is judged as defective insulation.Moisture proof insulation reliability is judged according to following standards.
[criterion of moisture proof insulation reliability]
○○:In 10 connection structural bodies, the connection structural bodies of defective insulation, and moisture proof insulation reliability are not there occurs
Property experiment after average resistance be 107More than Ω
○:In 10 connection structural bodies, the connection structural bodies of defective insulation, and moisture proof insulation reliability are not there occurs
Average resistance after experiment is 106Ω is less than 107Ω
△:In 10 connection structural bodies, the connection structural bodies of defective insulation, and moisture proof insulation reliability are not there occurs
Average resistance after experiment is 105Ω is less than 106Ω
×:In 10 connection structural bodies, there occurs the connection structural bodies of defective insulation has more than 1
Result is as described in Table 2.It should be noted that for used the embodiment of electroconductive particle B, comparative example and
For the connection structural bodies of reference example, when connection structural bodies is made, the soldering-tin layer of electroconductive particle B there occurs after melting
Solidification, the layers of copper of electroconductive particle B there occurs with the electrode of connection structural bodies and contact.
[table 2]
Conducting reliability | Moisture proof insulation reliability | |
Embodiment 7 | ○○ | ○○ |
Embodiment 8 | ○○ | Δ |
Embodiment 9 | ○○ | ○○ |
Embodiment 10 | ○○ | Δ |
Embodiment 11 | ○○ | Δ |
Embodiment 12 | ○○ | Δ |
Embodiment 13 | ○○ | ○○ |
Embodiment 14 | ○○ | ○○ |
Embodiment 15 | ○○ | Δ |
Embodiment 16 | ○ | ○○ |
Embodiment 17 | ○○ | Δ |
Embodiment 18 | ○○ | Δ |
Embodiment 19 | ○○ | Δ |
Embodiment 20 | ○○ | ○○ |
Embodiment 21 | ○○ | ○○ |
Comparative example 5 | ○○ | × |
Comparative example 6 | ○○ | × |
Comparative example 7 | ○○ | × |
Comparative example 8 | ○○ | × |
Comparative example 9 | ○○ | × |
Comparative example 10 | ○○ | × |
Comparative example 11 | ○○ | × |
Reference example 3 | ○ | ○○ |
Reference example 4 | ○ | ○○ |
Wherein, the evaluation result of the conducting reliability of embodiment 3,16 and reference example 1~4 is "○".But embodiment 3,
Contact resistance value of 16 contact resistance value in the evaluation of conducting reliability less than reference example 1~4.
In addition, the evaluation result of the conducting reliability of embodiment 7 and embodiment 14 is " 00 ", embodiment 8 and implements
The evaluation result of the conducting reliability of example 15 is the evaluation result of the conducting reliability of " 00 ", embodiment 10 and embodiment 17
The evaluation result for being the conducting reliability of " 00 ", embodiment 11 and embodiment 18 is " 00 ", embodiment 12 and implements
The evaluation result of the conducting reliability of example 19 is " 00 ".
But, contact resistance the commenting than the conducting reliability of embodiment 14 in the evaluation of the conducting reliability of embodiment 7
The contact resistance in low 0.7 Ω of contact resistance, the evaluation of the conducting reliability of embodiment 8 in valency can than the conducting of embodiment 15
Compare embodiment by the contact resistance in low 0.9 Ω of contact resistance, the evaluation of the conducting reliability of embodiment 10 in the evaluation of property
Contact electricity in low 0.8 Ω of contact resistance, the evaluation of the conducting reliability of embodiment 11 in the evaluation of 17 conducting reliability
Hinder the evaluation than low 0.8 Ω of contact resistance, the conducting reliability of embodiment 12 in the evaluation of the conducting reliability of embodiment 18
In contact resistance than low 0.7 Ω of contact resistance in the evaluation of the conducting reliability of embodiment 19.
It should be noted that illustrate only that the anisotropic conductive material of embodiment, comparative example and reference example to be used to connect
Connect the evaluation result of structure (FOG or FOB).For the anisotropic conductive material of embodiment, comparative example and reference example is used
In the situation without other connection structural bodies (FOB, FOG, COF and COG etc.) evaluated and by embodiment, comparative example and ginseng
The anisotropic conductive material for examining example is used as conductive material by the situation of the electrode electrical connection in organic field luminescence display element,
Confirm:Its (1) turn on reliability and (2) moisture proof insulation reliability evaluation result show with above-described embodiment, compare
The evaluation result identical tendency of example and reference example.
Claims (22)
1. a kind of conductive material, it includes curability composition, cation exchange column, anion exchanger and electroconductive particle,
The curability composition contains curability compound and cation propellant.
2. conductive material according to claim 1, wherein, the neutral exchange capacity of the cation exchange column is 2meq/g
More than, also, the neutral exchange capacity of the anion exchanger is more than 1meq/g.
3. conductive material according to claim 1 and 2, wherein, the cation exchange column includes zirconium atom.
4. conductive material according to claim 1 and 2, wherein, the anion exchanger includes magnesium atom and aluminium atom.
5. conductive material according to claim 3, wherein, the anion exchanger includes magnesium atom and aluminium atom.
6. conductive material according to claim 1 and 2, wherein, relative to the weight portion of curability compound 100, institute
The content of cation exchange column is stated for more than 0.01 weight portion and below 5 weight portions, also, the anion exchanger content
For more than 0.01 weight portion and below 5 weight portions.
7. conductive material according to claim 3, wherein, relative to the weight portion of curability compound 100, the sun
The content of ion exchanger is more than 0.01 weight portion and below 5 weight portions, also, the content of the anion exchanger is
More than 0.01 weight portion and below 5 weight portions.
8. conductive material according to claim 4, wherein, relative to the weight portion of curability compound 100, the sun
The content of ion exchanger is more than 0.01 weight portion and below 5 weight portions, also, the content of the anion exchanger is
More than 0.01 weight portion and below 5 weight portions.
9. conductive material according to claim 5, wherein, relative to the weight portion of curability compound 100, the sun
The content of ion exchanger is more than 0.01 weight portion and below 5 weight portions, also, the content of the anion exchanger is
More than 0.01 weight portion and below 5 weight portions.
10. conductive material according to claim 1 and 2, wherein, the electroconductive particle has resin particle and is configured at
Conductive layer on the resin particle surface,
At least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
11. conductive materials according to claim 3, wherein, the electroconductive particle has resin particle and is configured at institute
The conductive layer on resin particle surface is stated,
At least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
12. conductive materials according to claim 4, wherein, the electroconductive particle has resin particle and is configured at institute
The conductive layer on resin particle surface is stated,
At least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
13. conductive materials according to claim 5, wherein, the electroconductive particle has resin particle and is configured at institute
The conductive layer on resin particle surface is stated,
At least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
14. conductive materials according to claim 6, wherein, the electroconductive particle has resin particle and is configured at institute
The conductive layer on resin particle surface is stated,
At least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
15. conductive materials according to claim 7, wherein, the electroconductive particle has resin particle and is configured at institute
The conductive layer on resin particle surface is stated,
At least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
16. conductive materials according to claim 8, wherein, the electroconductive particle has resin particle and is configured at institute
The conductive layer on resin particle surface is stated,
At least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
17. conductive materials according to claim 9, wherein, the electroconductive particle has resin particle and is configured at institute
The conductive layer on resin particle surface is stated,
At least outer surface of the conductive layer is the low-melting-point metal layer that fusing point is less than 450 DEG C.
18. conductive materials according to claim 1 and 2, it also includes solder flux.
19. conductive materials according to claim 1 and 2, it is for the connecting object part with copper electrode to be connected
Conductive material.
20. conductive materials according to claim 1 and 2, it is anisotropic conductive material.
A kind of 21. connection structural bodies, it possesses the 1st connecting object part, the 2nd connecting object part and by the described 1st, the 2nd
The connecting portion of connecting object part electrical connection,
The connecting portion is formed as the conductive material any one of claim 1~20.
22. connection structural bodies according to claim 21, wherein,
The surface of the 1st connecting object part has the 1st electrode,
The surface of the 2nd connecting object part has the 2nd electrode,
1st electrode and the 2nd electrode are electrically connected by the electroconductive particle,
At least one of 1st electrode and the 2nd electrode are copper electrode.
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JP2011171760 | 2011-08-05 | ||
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JP2011-249888 | 2011-11-15 | ||
JP2011249888 | 2011-11-15 | ||
PCT/JP2012/069587 WO2013021895A1 (en) | 2011-08-05 | 2012-08-01 | Conductive material and connection structure |
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KR (1) | KR101774624B1 (en) |
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JP2015168803A (en) * | 2014-03-10 | 2015-09-28 | 日立化成株式会社 | Conductive adhesive composition, connection body, solar cell module and method of producing the same |
KR102240963B1 (en) * | 2014-10-28 | 2021-04-16 | 데쿠세리아루즈 가부시키가이샤 | Anisotropic conductive film, manufacturing method for same, and connection structure |
JP6458503B2 (en) * | 2015-01-13 | 2019-01-30 | デクセリアルズ株式会社 | Anisotropic conductive film, method for producing the same, and connection structure |
US10756119B2 (en) | 2016-04-20 | 2020-08-25 | Samsung Display Co., Ltd. | Display device and method for manufacturing same |
CN109983543B (en) * | 2017-03-30 | 2021-07-02 | 积水化学工业株式会社 | Conductive particle, conductive material, and connection structure |
CN109727701A (en) * | 2017-10-27 | 2019-05-07 | 玮锋科技股份有限公司 | Eutectic formula anisotropic conductive film and production method |
JP2018178125A (en) * | 2018-06-26 | 2018-11-15 | 日立化成株式会社 | Conductive adhesive composition, connection body, solar cell module and method for producing the same |
KR20200054747A (en) | 2018-11-12 | 2020-05-20 | 삼성전자주식회사 | Display module, display apparatus including the same and method of manufacturing display module |
CN116419959A (en) * | 2020-07-31 | 2023-07-11 | 株式会社力森诺科 | Adhesive film for circuit connection, adhesive composition for circuit connection, circuit connection structure, and method for producing same |
KR20230076850A (en) * | 2020-11-20 | 2023-05-31 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Phenolic compound, conductive paste composition, method for producing conductive paste composition, conductive wiring and method for producing the same |
CN112552854A (en) * | 2020-12-18 | 2021-03-26 | 山东万圣博化工有限公司 | Conductive adhesive and preparation method thereof |
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JP3904097B2 (en) * | 1997-03-03 | 2007-04-11 | 日立化成工業株式会社 | Anisotropic conductive connection member |
JPH1160899A (en) * | 1997-08-19 | 1999-03-05 | Minnesota Mining & Mfg Co <3M> | Conductive epoxy resin composition, anisotropic conductive adhesive film, and electrical connection method |
JP2000297204A (en) * | 1999-04-16 | 2000-10-24 | Toshiba Corp | Epoxy resin composition, rotating electric machine coil, casting resin composition and rotating electric machine |
JP3633422B2 (en) * | 2000-02-22 | 2005-03-30 | ソニーケミカル株式会社 | Connecting material |
JPWO2006064568A1 (en) * | 2004-12-16 | 2008-06-12 | 東亞合成株式会社 | Anion exchanger and resin composition for sealing electronic parts using the same |
JP4900554B2 (en) * | 2005-03-30 | 2012-03-21 | ソニーケミカル&インフォメーションデバイス株式会社 | Thermosetting anisotropic conductive adhesive |
JP4993880B2 (en) * | 2005-07-06 | 2012-08-08 | 旭化成イーマテリアルズ株式会社 | Anisotropic conductive adhesive sheet and finely connected structure |
US20070029682A1 (en) * | 2005-08-05 | 2007-02-08 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition and semiconductor device |
JP5077239B2 (en) * | 2006-11-20 | 2012-11-21 | 東亞合成株式会社 | Inorganic anion exchanger using bismuth compound and resin composition for encapsulating electronic parts using the same |
JP2010129960A (en) * | 2008-12-01 | 2010-06-10 | Sony Chemical & Information Device Corp | Connecting film, bonding laminate, and method of manufacturing the same |
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JP5859783B2 (en) * | 2010-09-14 | 2016-02-16 | 積水化学工業株式会社 | Anisotropic conductive material and connection structure |
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TW201314707A (en) | 2013-04-01 |
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KR20140052931A (en) | 2014-05-07 |
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