CN103701425B - 滤波器及其制造方法 - Google Patents
滤波器及其制造方法 Download PDFInfo
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- CN103701425B CN103701425B CN201310514230.5A CN201310514230A CN103701425B CN 103701425 B CN103701425 B CN 103701425B CN 201310514230 A CN201310514230 A CN 201310514230A CN 103701425 B CN103701425 B CN 103701425B
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- resonator
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- wave filter
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 137
- 238000000576 coating method Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000011435 rock Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910003334 KNbO3 Inorganic materials 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 2
- 229910020776 SixNy Inorganic materials 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
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CN201310514230.5A CN103701425B (zh) | 2013-10-25 | 2013-10-25 | 滤波器及其制造方法 |
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CN201310514230.5A CN103701425B (zh) | 2013-10-25 | 2013-10-25 | 滤波器及其制造方法 |
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CN103701425A CN103701425A (zh) | 2014-04-02 |
CN103701425B true CN103701425B (zh) | 2017-05-03 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110190826B (zh) * | 2019-05-31 | 2020-10-02 | 厦门市三安集成电路有限公司 | 谐振薄膜层、谐振器和滤波器 |
CN111600574B (zh) * | 2019-08-30 | 2023-10-03 | 天津大学 | 一种体声波滤波器及其带外抑制改善方法 |
CN111010120A (zh) * | 2019-09-20 | 2020-04-14 | 天津大学 | 具有调节层的体声波谐振器、滤波器和电子设备 |
CN111030635B (zh) * | 2019-12-31 | 2021-03-12 | 诺思(天津)微***有限责任公司 | 带复合阵列质量负载的体声波谐振器、滤波器及电子设备 |
CN111525905B (zh) * | 2020-04-03 | 2021-06-01 | 诺思(天津)微***有限责任公司 | 体声波谐振器、半导体器件、质量负载制作方法及电子设备 |
WO2022141392A1 (zh) * | 2020-12-31 | 2022-07-07 | 华为技术有限公司 | 滤波器以及滤波器的制备方法 |
CN112803912B (zh) * | 2021-03-22 | 2021-07-16 | 中芯集成电路制造(绍兴)有限公司 | 半导体器件及其形成方法 |
CN116722837B (zh) * | 2023-05-31 | 2024-07-02 | 锐石创芯(重庆)科技有限公司 | 体声波滤波器组件、射频前端模块及电子设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1902819A (zh) * | 2003-10-30 | 2007-01-24 | 阿瓦戈科技无线Ip(新加坡)股份有限公司 | 有温度补偿的薄膜体声谐振器 |
CN102916674A (zh) * | 2011-08-03 | 2013-02-06 | 太阳诱电株式会社 | 声波滤波器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6483229B2 (en) * | 2001-03-05 | 2002-11-19 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
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- 2013-10-25 CN CN201310514230.5A patent/CN103701425B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1902819A (zh) * | 2003-10-30 | 2007-01-24 | 阿瓦戈科技无线Ip(新加坡)股份有限公司 | 有温度补偿的薄膜体声谐振器 |
CN102916674A (zh) * | 2011-08-03 | 2013-02-06 | 太阳诱电株式会社 | 声波滤波器 |
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