CN103695868A - Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint - Google Patents
Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint Download PDFInfo
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- CN103695868A CN103695868A CN201310688648.8A CN201310688648A CN103695868A CN 103695868 A CN103695868 A CN 103695868A CN 201310688648 A CN201310688648 A CN 201310688648A CN 103695868 A CN103695868 A CN 103695868A
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Abstract
The invention discloses a linear plasma-enhanced chemical vapor deposition system with a remote magnetic-mirror field constraint. The linear plasma-enhanced chemical vapor deposition system comprises a deposition chamber, wherein the deposition chamber is divided into a plasma generation region and a material surface treatment region; a permanent magnet is arranged at each of the top end and two sides of the deposition chamber; upper and lower gas inlet pipes and a coaxial circular waveguide connected with a coaxial microwave source are arranged inside the plasma generation region of the deposition chamber; a substrate table is arranged inside the material surface treatment region of the deposition chamber; a vacuum unit is arranged at the bottom of the deposition chamber; the coaxial circular waveguide is utilized to stimulate a working gas to generate linear microwave plasma inside the deposition chamber under the condition of the linear magnetic-mirror field constraint generated by permanent magnet components; and the introduced working gas forms a film on the substrate surface of the substrate table under the effect of the linear microwave plasma. By adopting the linear plasma-enhanced chemical vapor deposition system, the large-size uniform deposition of a semiconductor film and a doped semiconductor film can be realized, fast and continuous deposition of the film is realized by remotely introducing a reaction gas, and industrial continuous production is easily realized.
Description
Technical field
The invention belongs to plasma body and thin-film material field of scientific study, be specifically related to a kind of long-range magnetic mirror and retrain linear plasma reinforced chemical vapor deposition system.
Background technology
Low-temperature plasma strengthens chemical vapour deposition technique (Plasma Enhanced Chemical Vapor Deposition, PECVD), the developing rapidly of the field such as large-scale integrated circuit, solar energy film photovoltaic cell, flat-panel monitor, material surface modifying, functional group grafting and fuel cell ion-exchange membrane application, people need a kind ofly can produce high deposition/etch speed, Large-Area-Uniform, stable low-temperature plasma generation technique urgently.For can be this technical making a breakthrough, plasma body industry experts is made unremitting effort for this reason both at home and abroad, a variety of methods have been adopted: one, adopts more superior plasma discharge driving source, as DC source of energization, low frequency (~ 500kHz) driving source, radio frequency (~ 13.56MHz) driving source, very high frequency(VHF) (~ 60MHz) driving source, ultra-high frequency (~ 500MHz) driving source, double frequency (13.56MHz+27.12MHz etc.) driving source, and microwave (~ 2.45GHz) driving source etc.; Its two, adopt more superior electric discharge bit-type, for example with radio frequency, do plasma excitation source, can adopt the radio frequency discharge of electrode capactitance/jigger coupling, also can adopt electrodeless inductively-coupled discharge and Helical wave discharge etc.; Its three, adopt magnetic field enhancing/confined discharge, for example use microwave driving source, can adopt divergent magnetic field bit-type, also can adopt multistage magnetic field bit-type etc.; Its important object is to obtain high-density, the stable plasma source of Large-Area-Uniform.In general, improve plasma excitation source frequency and can obtain high plasma body cut-off density, be beneficial to and improve plasma density and reduce ion energy, and then improve deposition/etch speed, reduce ion bombardment to the damage of film etc.But improve driving source frequency simultaneously, have some problems, the sedimentation rate that for example electrode surface standing wave (TEM ripple) and evanescent waveguide pattern (TE ripple) cause is inhomogeneous.
In recent years, a kind of linear plasma source has caused that domestic and international expert pays close attention to widely.Different with large volume (three-dimensional) plasma source from traditional big area (two-dimensional direction), linear plasma source only need upwards be realized even, stable plasma body at one-dimensional square, adopt a plurality of linear plasma sources side by side, or with plated sample in horizontal with suitable speed uniform motion, can form the thin film deposition of Large-Area-Uniform.This structure greatly reduces the development difficulty of high performance plasmas deposit film equipment, but when some semi-conductor of deposition or doped semiconductor, exists skin effect to be unfavorable for the continuity operation of plated film.
Summary of the invention
For the weak point in above-mentioned pecvd process, the invention provides the linear high-density plasma reinforced chemical gas-phase deposition system of a kind of long-range mirror-magnetic field fetter, adopt equipment and process of the present invention can realize the deposition of semiconductor film, doped semiconductor films, outstanding feature of the present invention is the deposition that the linear plasma body of mirror-magnetic field fetter can provide high-density, big scale film, by long-range, pass into the deposition rapidly, continuously that reactant gases is realized film, and be easy to realize industrialization and produce continuously.
The technical solution used in the present invention is:
A kind of long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: the deposit cavity that includes convex shape, deposit cavity is divided into, lower two portions region, be respectively plasma generating region, material surface treatment zone, the top of deposit cavity is provided with the first permanent magnet, the both sides of the plasma generating region of deposit cavity are respectively equipped with second, the 3rd permanent magnet, the direction of magnetization of the first permanent magnet and second, the direction of magnetization of the 3rd permanent magnet is contrary, deposit cavity is provided with the enterprising tracheae being connected with source of the gas leading in plasma generating region, lower inlet duct, enterprising tracheae, between lower inlet duct, be provided with the coaxial circles waveguide being connected with coaxial microwave source that runs through whole plasma generating region, in the material surface treatment zone of deposit cavity, be provided with chip bench, a left side for the material surface treatment zone of deposit cavity, on right two side, be respectively equipped with view port, rectangle deposition chamber door, the bottom of deposit cavity is provided with vacuum unit, first, second and third described permanent magnet forms and is the permanent magnet group that a font is arranged, under the linear mirror-magnetic field fetter condition producing at permanent magnet assembly, use the coaxial circles waveguide being connected with coaxial microwave source in deposit cavity, to excite working gas to produce Linear extended microwave plasma, at acquisition one-dimensional square, on the basis of homogeneous plasma, further improve plasma density, and then further improve plasma-deposited speed, the working gas that passes into substrate surface on chip bench under Linear extended microwave plasma effect form film.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: the upper and lower end of the first described permanent magnet is respectively the N utmost point, the S utmost point, and the upper and lower end of second and third permanent magnet is respectively the S utmost point, the N utmost point; Each permanent magnet is rectangle cylinder, and material is the magneticsubstances such as rubidium iron boron.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: the vacuum cavity that described deposit cavity is magnetism-free stainless steel.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: described chip bench is rectangle stainless steel substrate platform, and chip bench can heat; Also can use direct current, interchange or radio-frequency power supply to apply bias voltage.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: the linear electrode in described coaxial microwave source is in deposit cavity.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: described working gas is mixed gas or the methane of argon gas, hydrogen, hydrogen and silane.
Described long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: described plasma generating region and chip bench have certain distance, and chip bench is in remote plasma generating area.
Plasma reinforced chemical vapor deposition system energy multiple-unit use, or parallel plasma source, or parallel chip bench substrate, realize Large-Area-Uniform high density plasma CVD.
Principle of work of the present invention is:
The present invention is by using rectangle cavity configuration, and cavity top is narrower coaxial microwave plasma generation area, and bottom is more spacious work area, realizes the linear plasma enhanced chemical vapor deposition that produces single unit.Yet in the situation that there is no magnetically confined, plasma body is not to the diffusion of vacuum chamber body wall, and homogeneity is bad on the one hand, and the recombination losses at wall can reduce plasma density on the other hand.Therefore,, in order to improve homogeneity and the plasma density of linear plasma body, reduce recombination losses, thereby introduced magnetic mirror type magnetic field configuration.Use three blocks of bar magnets to be arranged in outside plasma slab cavity, wherein two are positioned at microwave cavity both sides, and one is positioned at microwave cavity top, and direction of magnetization is along the direction perpendicular to chip bench, and top is contrary with both sides magnet direction of magnetization.By suitable distance and the specific magnetising moment, design, can obtain magnetic mirror type magnetic field configuration low between the persistent erection of upper and lower two ends.Plasma body can be limited in magnetic mirror like this, thereby has reduced the compound generation of wall.The introducing in magnetic field has also increased the mean free path of electronics, thereby has increased the collision cross-section of electronics, and plasma density is improved.Can heat, can biased chip bench can further control the energy of plasma body intermediate ion and active group, improve the controllability of deposition.
Advantage of the present invention is:
The present invention adopts linear mirror field magnetic field configuration, improves plasma density and large-area uniformity, can realize the deposition rapidly, continuously of the multiple thin dielectric films such as silicon, carbon; Only need to upwards realize even, stable plasma body at one-dimensional square, adopt a plurality of linear plasma sources side by side, or with plated sample in horizontal with suitable speed uniform motion, can form the thin film deposition of Large-Area-Uniform; This structure greatly reduces the development difficulty of high performance plasmas deposit film equipment, compares and does not need superpower to maintain with large volume plasma source with traditional big area, has not only reduced cost, has also improved feasibility and handiness.
Accompanying drawing explanation
Fig. 1 is the transverse sectional view that long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system.
Fig. 2 is the longitudinal cross-section schematic diagram that long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system.
Fig. 3 is the magnetic field component schematic diagram that long-range magnetic mirror retrains linear plasma source.
Fig. 4 is the magnetic mirror shape magnetic field configuration distribution that long-range magnetic mirror retrains linear plasma source.
Embodiment
Below in conjunction with drawings and Examples, to of the present invention, be described in detail.
Embodiment
As depicted in figs. 1 and 2, long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, comprise the inlet pipe 1 and 3 being connected with source of the gas, the coaxial circles waveguide 2 being connected with coaxial microwave source, " protruding " font magnetism-free stainless steel vacuum cavity 11, rectangle deposition chamber door 4, view port 7, built-inly heat, biasing chip bench 5, vacuum unit 6, and the magnetic field component that forms of permanent magnet 8,9,10.This long-range magnetic mirror retrains in linear plasma reinforced chemical vapor deposition system, uses mechanical pump-molecular pump cascade vacuum unit 6 to vacuumize, and base vacuum can reach 10
-4pa magnitude.For the working gas depositing, by enterprising tracheae 1 and lower inlet duct 3, enter in vacuum chamber, wherein rare gas element and reducing gas are by inlet pipe 1, reactive precursor gases enters plasma downstream region by inlet pipe 3, and such gas circuit is designed with and helps reduce the pollution in deposition process, microwave cavity being produced.Coaxial circles waveguide 2 two ends join with the coaxial microwave source of 2.45GHz respectively, to reduce the plasma nonuniformity that uses single microwave source to cause because of the decay of microwave in waveguide.The position of chip bench 5 can be according to different operating mode up-down adjustment to obtain optimum deposition condition, by external heating power supply, can heat substrate, also can be with direct current, exchange, radio-frequency power supply joins substrate formed to bias voltage, realizes like this ion controlled on arrival substrate and the optimal deposition energy of active group.The length of rectangle deposit cavity door 4 and height match with the size of deposit cavity 11, can put into or take out large-sized substrate material.Can observing device applying plasma discharged condition by view port 7, also can be used as the window diagnosis plasma parameter of spectral instrument.Three block permanent magnets 8,9,10 by the suitable magnetic mirror type magnetic field configuration being combined to form for improving density and the homogeneity of plasma body.
As shown in Figure 3, magnetic field component is comprised of permanent magnet 8,9,10.As shown in FIG., the direction of magnetization of both sides magnet 8,9 is contrary with upper magnet 10 for their direction of magnetization.The magneticstrength of the rubidium iron boron magnet using is by the specific magnetising moment and the control of magnet size, the longitudinal length of magnet much larger than lateral dimension to form linear magnetic mirror type magnetic field configuration.
As shown in Figure 4, be the magnetic field configuration cross section that magnetic field component produces in space, upper and lower ends magnetic line of force is intensive, and middle magnetic line of force is relatively sparse, is typical magnetic mirror type magnetic field configuration.
Claims (7)
1. a long-range magnetic mirror retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: the deposit cavity that includes convex shape, deposit cavity is divided into, lower two portions region, be respectively plasma generating region, material surface treatment zone, the top of deposit cavity is provided with the first permanent magnet, the both sides of the plasma generating region of deposit cavity are respectively equipped with second, the 3rd permanent magnet, the direction of magnetization of the first permanent magnet and second, the direction of magnetization of the 3rd permanent magnet is contrary, deposit cavity is provided with the enterprising tracheae being connected with source of the gas leading in plasma generating region, lower inlet duct, enterprising tracheae, between lower inlet duct, be provided with the coaxial circles waveguide being connected with coaxial microwave source that runs through whole plasma generating region, in the material surface treatment zone of deposit cavity, be provided with chip bench, a left side for the material surface treatment zone of deposit cavity, on right two side, be respectively equipped with view port, rectangle deposition chamber door, the bottom of deposit cavity is provided with vacuum unit, first, second and third described permanent magnet forms and is the permanent magnet group that a font is arranged, under the linear mirror-magnetic field fetter condition producing at permanent magnet assembly, use the coaxial circles waveguide be connected with coaxial microwave source in deposit cavity, to excite working gas to produce Linear extended microwave plasma, the working gas that the passes into formation of the substrate surface on chip bench film under Linear extended microwave plasma effect.
2. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: the upper and lower end of the first described permanent magnet is respectively the N utmost point, the S utmost point, and the upper and lower end of second and third permanent magnet is respectively the S utmost point, the N utmost point; Each permanent magnet is rectangle cylinder, and material is the magneticsubstances such as rubidium iron boron.
3. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: the vacuum cavity that described deposit cavity is magnetism-free stainless steel.
4. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: described chip bench is rectangle stainless steel substrate platform, and chip bench can heat; Also can use direct current, interchange or radio-frequency power supply to apply bias voltage.
5. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: the linear electrode in described coaxial microwave source is in deposit cavity.
6. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: described working gas is mixed gas or the methane of argon gas, hydrogen, hydrogen and silane.
7. long-range magnetic mirror according to claim 1 retrains linear plasma reinforced chemical vapor deposition system, it is characterized in that: described plasma generating region and chip bench have certain distance, and chip bench is in remote plasma generating area.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104375292A (en) * | 2014-11-19 | 2015-02-25 | 深圳市华星光电技术有限公司 | Vacuum reaction cavity of vacuum machine and vacuum machine |
| CN105088196A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Large-area and high-density microwave plasma generating device |
| CN105088195A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Method for fast free-radical-enhanced chemical vapor deposition of thin films |
| CN105704902A (en) * | 2014-11-27 | 2016-06-22 | 中国科学院空间科学与应用研究中心 | Combined magnetic confinement linear hollow cathode discharge device |
| CN107012448A (en) * | 2017-03-31 | 2017-08-04 | 郑州新世纪材料基因组工程研究院有限公司 | A kind of radio frequency plasma enhancing chemical gaseous phase depositing process and device |
| CN107202787A (en) * | 2017-06-06 | 2017-09-26 | 浙江大学 | A kind of dipulse excites magnetic field space double constraints to strengthen the spectrum detection device of plasma |
| CN107301942A (en) * | 2017-07-11 | 2017-10-27 | 四川恒创博联科技有限责任公司 | A kind of plasma modification ultrafiltration membrane treatment system |
| CN109302791A (en) * | 2018-10-26 | 2019-02-01 | 中国科学院合肥物质科学研究院 | Microwave antenna, which regulates and controls magnetic, enhances linear plasma source generation system |
| CN114351123A (en) * | 2021-12-15 | 2022-04-15 | 北京博纳晶科科技有限公司 | Large-cavity multifunctional chemical vapor deposition equipment and use method |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016078116A1 (en) * | 2014-11-19 | 2016-05-26 | 深圳市华星光电技术有限公司 | Vacuum reaction chamber of vacuum machine and vacuum machine |
| CN104375292A (en) * | 2014-11-19 | 2015-02-25 | 深圳市华星光电技术有限公司 | Vacuum reaction cavity of vacuum machine and vacuum machine |
| CN105704902B (en) * | 2014-11-27 | 2018-02-16 | 中国科学院空间科学与应用研究中心 | A kind of combined magnetic constrains linear hollow cathode discharge device |
| CN105704902A (en) * | 2014-11-27 | 2016-06-22 | 中国科学院空间科学与应用研究中心 | Combined magnetic confinement linear hollow cathode discharge device |
| CN105088196A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Large-area and high-density microwave plasma generating device |
| CN105088195A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Method for fast free-radical-enhanced chemical vapor deposition of thin films |
| CN107012448A (en) * | 2017-03-31 | 2017-08-04 | 郑州新世纪材料基因组工程研究院有限公司 | A kind of radio frequency plasma enhancing chemical gaseous phase depositing process and device |
| CN107202787A (en) * | 2017-06-06 | 2017-09-26 | 浙江大学 | A kind of dipulse excites magnetic field space double constraints to strengthen the spectrum detection device of plasma |
| CN107301942A (en) * | 2017-07-11 | 2017-10-27 | 四川恒创博联科技有限责任公司 | A kind of plasma modification ultrafiltration membrane treatment system |
| CN107301942B (en) * | 2017-07-11 | 2019-03-08 | 四川恒创博联科技有限责任公司 | A kind of plasma modification ultrafiltration membrane treatment system |
| CN109302791A (en) * | 2018-10-26 | 2019-02-01 | 中国科学院合肥物质科学研究院 | Microwave antenna, which regulates and controls magnetic, enhances linear plasma source generation system |
| CN109302791B (en) * | 2018-10-26 | 2023-08-22 | 中国科学院合肥物质科学研究院 | Microwave antenna regulation and control magnetic enhancement linear plasma source generation system |
| CN114351123A (en) * | 2021-12-15 | 2022-04-15 | 北京博纳晶科科技有限公司 | Large-cavity multifunctional chemical vapor deposition equipment and use method |
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Address after: 230001 no.181 Gucheng Road, shiyangang Township, Hefei City, Anhui Province Patentee after: INSTITUTE OF PLASMA PHYSICS, CHINESE ACADEMY OF SCIENCES Address before: 230031 Shushan Lake Road, Shushan District, Anhui, China, No. 350, No. Patentee before: INSTITUTE OF PLASMA PHYSICS, CHINESE ACADEMY OF SCIENCES |