CN103676382B - 阵列基板及显示装置 - Google Patents
阵列基板及显示装置 Download PDFInfo
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- 238000005516 engineering process Methods 0.000 description 5
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Abstract
本发明提供一种阵列基板及具有该阵列基板的显示装置,包括在基板上的GOA区域形成的第一金属层、第一绝缘层、第二金属层和第二绝缘层,在所述第二绝缘层背离所述基板的一侧形成有第三金属层,所述第三金属层通过过孔分别连接所述第一金属层和所述第二金属层。本发明通过提供一种阵列基板及具有该阵列基板的显示装置,从而有效减少了GOA走线所占空间,减小了GOA区域宽度。
Description
技术领域
本发明涉及显示技术领域,特别涉及一种阵列基板及具有该阵列基板的显示装置。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display,TFT-LCD)是目前常见的液晶显示器产品,在TFT-LCD中,每一个像素都具有一个薄膜晶体管,而每一个像素的薄膜晶体管都需要与相应的栅极驱动电路相连接,以控制像素内液晶透光度的变化进而达到控制像素色彩变化的目的。阵列基板栅极驱动(Gate Driver on Array,GOA)电路技术是目前TFT-LCD技术领域常用的一种栅极驱动电路技术,GOA电路通过多个级联的栅极驱动电路实现,该技术是将栅极驱动电路直接制作在阵列基板上,代替外接的驱动芯片。
对传统的阵列基板的布线是由两层金属线完成,通过用与TFT-LCD中相同的栅极和源/漏金属进行周边连接线的布线。
然后,对于TFT-LCD中的布线有很多,对于传统的栅极驱动装置中同层金属线容易交叉,或者同层金属线的间距过小,均容易引起电路短路。
发明内容
(一)解决的技术问题
本发明解决的技术问题是:如何提供一种阵列基板及具有该阵列基板的显示装置,以解决栅极驱动装置中容易引起电路短路问题。
(二)技术方案
为解决上述技术问题,本发明实施例提供了一种阵列基板,包括在基板上的GOA区域形成的第一金属层、第一绝缘层、第二金属层和第二绝缘层,在所述第二绝缘层背离所述基板的一侧形成有第三金属层,所述第三金属层通过过孔分别连接所述第一金属层和所述第二金属层。
具体而言,即所述第三金属层包括第一金属层引线和第二金属层引线,所述第一金属层引线和所述第二金属层引线相互绝缘,并且通过过孔分别连接所述第一金属层和所述第二金属层。
优选地,在所述第二绝缘层和所述第三金属层之间还形成有透明导电层。
优选地,在所述第二绝缘层和所述透明导电层之间,且非过孔的区域还形成有第三绝缘层;或所述第二绝缘层与第三金属层之间的非过孔区域还形成有第三绝缘层。
优选地,所述第三绝缘层的厚度为1~2μm。
除此之外,所述阵列基板以第三金属层作为至少部分信号线。当阵列基板除第三金属层外,还有其他信号线时,阵列基板将除第三金属层以外的信号线通过过孔连接至所述第一金属层和第二金属层。
具体而言,由于本发明在现有阵列基板的基础上加设了第三层金属层,GOA的信号线可以同时采用第三金属层来布线,这样的话可将信号线的位置从原来的TFT旁边移动到TFT上方,并通过过孔与TFT的第一金属层或第二金属层相连接,可大大减小GOA区域的面积。采用这种方案时,由于信号线较宽,会与第一金属层和第二金属层金属产生较大的耦合电容,所以最好在第三层金属(即第三金属层)与第一金属层和第二金属层金属之间加入较厚的树脂(即第三绝缘层),以降低耦合电容。
本发明技术方案中,信号线的材质采用本领域常规使用的即可,如栅极金属和源/漏极金属等,具体的选择为本领域技术人员所掌握,本发明对此不作特别限定。
本发明所述的阵列基板,其中所述的第一金属层为栅极,第一绝缘层为栅绝缘层,第二金属层为源/漏极,第二绝缘层为钝化层,第三金属层为金属图案层。此外,在合理的范围内,各层并不局限于上述特别限定。
本发明实施例还提供了一种显示装置,具有如上所述的阵列基板。
(三)有益效果
本发明实施例通过提供一种阵列基板及具有该阵列基板的显示装置,通过在第二绝缘层背离所述基板的一侧形成有第三金属层,所述第三金属层通过过孔分别连接所述第一金属层和所述第二金属层,从而有效减少了GOA走线所占空间,减小了GOA区域宽度。此外,由于本发明引入了第三金属层,因此,可将信号线的位置从原来的TFT旁边移动到TFT上方,并通过过孔与TFT的第一金属层或第二金属层相连接,可大大减小GOA区域的面积。
附图说明
图1是本发明实施例1提供的阵列基板结构示意图;
图2是本发明实施例2提供的阵列基板结构示意图;
图3是本发明实施例3提供的阵列基板结构示意图;
其中,1为第一金属层;2为第一绝缘层;3为第二金属层;4为第二绝缘层;5为第三金属层;6为第三绝缘层;7为透明导电层。
具体实施方式
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
实施例1:
本发明实施例提供了一种阵列基板,如图1所示,包括在基板上的GOA区域依次形成的第一金属层1、第一绝缘层2、第二金属层3和第二绝缘层4,在所述第二绝缘层4背离所述基板的一侧形成有第三金属层5,所述第三金属层5包括第一金属层引线和第二金属层引线,所述第一金属层引线和所述第二金属层引线相互绝缘,并且通过过孔分别连接所述第一金属层1和所述第二金属层2。从而有效减少了GOA走线所占空间,减小了GOA区域宽度。
本实施例中,第一金属层1为栅极,第一绝缘层2为栅绝缘层,第二金属层3为源/漏极,第二绝缘层4为钝化层,第三金属层5为金属图案层。
实施例2:
由于第三金属层5通过过孔连接至第一金属层1和第二金属层3,因此,为了避免第三金属层5在过孔处折断,本实施例在实施例1结构的基础上,在所述第二绝缘层4和所述第三金属层5之间还形成有透明导电层7。
如图2所示,阵列基板包括在基板上的GOA区域形成的第一金属层1、第一绝缘层2、第二金属层3、第二绝缘层4、透明导电层7和第三金属层5,第三金属层5包括第一金属层引线和第二金属层引线,所述第一金属层引线和所述第二金属层引线相互绝缘,并且通过过孔分别连接所述第一金属层1和所述第二金属层3。通过增加的透明导电层7作为第三金属层5的过渡层,避免了第三金属层5在过孔处的折断。
实施例3:
为了降低第三金属层5和第二金属层3以及第一金属层1之间的电容,本实施例在实施例2的结构基础上,在第二绝缘层4和透明导电层7之间,且非过孔的区域还形成有第三绝缘层6,其中,该第三绝缘层6的厚度为1~2μm。在该厚度范围内,能够有效降低第三金属层与TFT器件之间的电容,又能确保其加工的可行性(第三绝缘层的厚度太大导致加工难度大)及阵列基板的使用效果。
如图3所示,阵列基板包括在基板上的GOA区域形成的第一金属层1、第一绝缘层2、第二金属层3、第二绝缘层4、第三绝缘层6、透明导电层7和第三金属层5,第三金属层5包括第一金属层引线和第二金属层引线,所述第一金属层引线和所述第二金属层引线相互绝缘,并且通过过孔分别连接所述第一金属层1和所述第二金属层3。通过增加的第三绝缘层6,降低了第三金属层5和第一金属层1以及第二金属层3之间的寄生电容,减少信号受到的干扰,增强显示质量。
实施例4:
本实施例与实施例3相比,区别点仅在于所述阵列基板不包括透明导电层7,在第二绝缘层4和第三金属层5之间非过孔的区域直接形成第三绝缘层6。
实施例5
本发明实施例提供了一种显示装置,包括上述实施例1-4中任一实施例得到的所述阵列基板。所述显示可以是液晶电视、智能手机、平板电脑等等。
以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。
Claims (8)
1.一种阵列基板,包括在基板上的GOA区域形成的第一金属层、第一绝缘层、第二金属层和第二绝缘层,其特征在于,在所述第二绝缘层背离所述基板的一侧形成有第三金属层,所述第三金属层通过过孔分别连接所述第一金属层和所述第二金属层;
所述第三金属层包括第一金属层引线和第二金属层引线,所述第一金属层引线和所述第二金属层引线相互绝缘,并且通过过孔分别连接所述第一金属层和所述第二金属层;
所述的第一金属层为栅极,第二金属层为源/漏极,第三金属层为金属图案层。
2.如权利要求1所述的阵列基板,其特征在于,在所述第二绝缘层和所述第三金属层之间还形成有透明导电层。
3.如权利要求2所述的阵列基板,其特征在于,在所述第二绝缘层和所述透明导电层之间的非过孔区域还形成有第三绝缘层;或,当所述第二绝缘层与所述第三金属层之间不形成有所述透明导电层时,在所述第二绝缘层与第三金属层之间的非过孔区域还形成有第三绝缘层。
4.如权利要求3所述的阵列基板,其特征在于,所述第三绝缘层的厚度为1~2μm。
5.如权利要求3所述的阵列基板,其特征在于,所述阵列基板以第三金属层作为至少部分信号线。
6.如权利要求3所述的阵列基板,其特征在于,所述阵列基板将除第三金属层以外的信号线通过过孔连接至所述第一金属层和第二金属层。
7.如权利要求1所述的阵列基板,其特征在于:第一绝缘层为栅绝缘层,第二绝缘层为钝化层。
8.一种显示装置,其特征在于,具有如权利要求1~7中任一项所述的阵列基板。
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