CN103579431A - Semiconductor light emitting structure and manufacturing method thereof - Google Patents
Semiconductor light emitting structure and manufacturing method thereof Download PDFInfo
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- CN103579431A CN103579431A CN201210279540.9A CN201210279540A CN103579431A CN 103579431 A CN103579431 A CN 103579431A CN 201210279540 A CN201210279540 A CN 201210279540A CN 103579431 A CN103579431 A CN 103579431A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Abstract
The invention provides a manufacturing method of a semiconductor light emitting structure. The manufacturing method of the semiconductor light emitting structure comprises the steps of providing a first substrate; forming an epitaxial layer on the first substrate, wherein the epitaxial layer comprises a first electrical semiconductor layer, a second electrical semiconductor layer and a first light emitting layer located between the electrical semiconductor layers; segmenting the epitaxial layer, defining a first epitaxial structure and a second epitaxial structure and exposing part of the first electrical semiconductor layer, wherein the exposed part of the first electrical semiconductor layer is provided with a first contact area, and the second electrical semiconductor layer is provided with a second contact area; forming an electric conduction supporting structure to cover the first contact area and the second contact area, and making the first epitaxial structure be electrically coupled with the second epitaxial structure.
Description
Technical field
This case is to be a kind of semiconductor structure and manufacture method thereof, is especially a kind of crystal covering type semiconductor light emitting structure and manufacture method thereof of being applied to.
Background technology
Semiconductor light-emitting elements, as light-emitting diode (light emitting diode, LED), can change the signal of telecommunication into light signal, its principle of luminosity is to utilize P type semiconductor and N type semiconductor in epitaxial structure to join, then bestows voltage in the positive and negative two ends of light-emitting diode, when electric current passes through, make the hole combination of electronics electricity, in conjunction with energy with the form of light, send.Compare with conventional light source, there is the advantages such as energy-conservation, efficiency is higher, reaction speed is very fast, the life-span is long, popularized in purposes such as display panel, indicator light, illuminations.
Refer to Fig. 1, Fig. 1 is existing LED sides schematic diagram, light-emitting diode 10 and light-emitting diode 11 series connection, to utilize interconnect 13 the N-type contact 102 of electrical couplings light-emitting diode 10 and the P type contact 111 of light-emitting diode 11 respectively, therefore, can utilize interconnect 13 that a plurality of light-emitting diode electrical couplings are become to light-emitting diode array, as shown in Figure 2 (Fig. 2 is existing light-emitting diode array schematic top plan view).Yet for avoiding online part to cover bright dipping region, interconnect needs very very thin, therefore easily collides and ruptures because of external force in processing procedure.
In addition, prior art often sees through the packaged type of crystal covering type (flip) and attempts solving LED heat radiating problem, refers to Fig. 3, and Fig. 3 is existing crystal-coated light-emitting diodes side schematic view.If after the existing light-emitting diode upset that Fig. 1 is illustrated, do online with circuit board 14, after the P type contact 101 of electrical couplings light-emitting diode contacts 112 with N-type respectively by the electrode of circuit board 14 141,142, between crystal-coated light-emitting diodes element and circuit board 14, still there are many spaces.For consolidating structure, utilize capillarity that insulating cement N is carried out to bottom and fill (underfill) those spaces, yet capillarity cannot evenly be filled up space, bottom, and the epitaxial structure thickness of light-emitting diode is very little, space, bottom make overall structure and very thin interconnect weaker.If have slight external force collision or when laser is peeled off substrate, all easily cause epitaxial structure and interconnect 13 break (cracking).
In view of this, how making epitaxial structure and interconnect not be subject to external force impact and break, improving the reliability of light-emitting diode, and strengthen radiating efficiency to improve its usefulness, is development main purpose of the present invention.
Summary of the invention
An object of the present invention is to provide semiconductor light emitting structure manufacture method, to reach the reliability of light-emitting diode and to strengthen radiating efficiency to improve its usefulness.For reaching aforementioned object, its step comprises: first substrate is provided; On first substrate, form epitaxial layer, epitaxial layer comprises the first electrical semiconductor layer, the second electrical semiconductor layer and the first luminescent layer between these electrical semiconductor layers; Cut apart epitaxial layer, and define the first epitaxial structure and the second epitaxial structure, and expose the electrical semiconductor layer of part first, wherein on the expose portion of the first electrical semiconductor layer, there is the first contact zone, on the second electrical semiconductor layer, there is the second contact zone; And formation support structure, cover the first contact zone and the second contact zone, make first epitaxial structure electrical couplings the second epitaxial structure.
In one embodiment of the invention, above-mentioned steps more comprises that formation the first ohmic contact layer, on the first contact zone, make support structure electrical couplings the first ohmic contact layer, and direct nurse difficult to understand contacts the second contact zone.
In one embodiment of the invention, above-mentioned steps more comprises that formation the second ohmic contact layer, on the second contact zone, make support structure electrical couplings the second ohmic contact layer, and direct nurse difficult to understand contacts the first contact zone.
In one embodiment of the invention, above-mentioned steps is more included in the step that forms epitaxial layer, form the 3rd electrical semiconductor layer on the second electrical semiconductor layer, and between it, there is the second luminescent layer, wherein the 3rd electrical semiconductor layer and the first electrical semiconductor layer have identical electrically, and have contrary electrical with the second electrical semiconductor layer; In cutting apart the step of epitaxial layer, expose the electrical semiconductor layer of part second simultaneously, wherein on the 3rd electrical semiconductor layer, there is the 3rd contact zone; And in forming the step of support structure, simultaneously cover the 3rd contact zone and the first contact zone on the first epitaxial structure, and the second contact zone on the second epitaxial structure.
In one embodiment of the invention, above-mentioned steps more comprises formation the second insulation system, in order to cover support structure, but the support structure of expose portion; Provide second substrate, the expose portion of electrical couplings support structure; And remove first substrate, in order to expose a side of these epitaxial structures.
In one embodiment of the invention, above-mentioned steps more comprises carries out roughening processing procedure by this side of these epitaxial structures.
In one embodiment of the invention, above-mentioned steps more comprises that formation electrode is in this side of the second epitaxial structure or the first epitaxial structure.
In one embodiment of the invention, the method that forms support structure in above-mentioned steps comprises electroplates or evaporation processing procedure.
An object of the present invention is to provide semiconductor light emitting structure, to reach the reliability of light-emitting diode and to strengthen radiating efficiency to improve its usefulness.For reaching aforementioned object, it comprises the first epitaxial structure, the second epitaxial structure and support structure.Wherein, the first epitaxial structure has the first contact zone; The second epitaxial structure has the second contact zone; And coated the first contact zone of support structure and the second contact zone, make first epitaxial structure electrical couplings the second epitaxial structure.
In one embodiment of the invention, above-mentioned semiconductor light emitting structure more comprises the first ohmic contact layer, be formed on the first contact zone, and support structure electrical couplings the first ohmic contact layer, and direct nurse difficult to understand contacts the second contact zone.
In one embodiment of the invention, above-mentioned semiconductor light emitting structure more comprises the second ohmic contact layer, be formed on the second contact zone, and support structure electrical couplings the second ohmic contact layer, and direct nurse difficult to understand contacts the first contact zone.
In one embodiment of the invention, above-mentioned semiconductor light emitting structure more comprises the first ohmic contact layer and the second ohmic contact layer, be formed at respectively on the first contact zone and the second contact zone, wherein the material of support structure is identical with the material of the first ohmic contact layer or the second ohmic contact layer.
In one embodiment of the invention, above-mentioned the first epitaxial structure and the second epitaxial structure all comprise the first electrical semiconductor layer, the second electrical semiconductor layer and the first luminescent layer.Wherein, the first electrical semiconductor layer has the first contact zone; The second electrical semiconductor layer has the second contact zone, and has contrary electrical with the first electrical semiconductor layer; And first luminescent layer between the first electrical semiconductor layer and the second electrical semiconductor layer.
In one embodiment of the invention, above-mentioned the first epitaxial structure and the second epitaxial structure all comprise the second luminescent layer and the 3rd electrical semiconductor layer, and the second luminescent layer is between the 3rd electrical semiconductor layer and the second electrical semiconductor layer, the 3rd electrical semiconductor layer has identical electrical with the first electrical semiconductor layer, and on it, there is the 3rd contact zone, support structure covers the 3rd contact zone and the first contact zone on the first epitaxial structure, and the second contact zone on the second epitaxial structure.
In one embodiment of the invention, the material of above-mentioned support structure is metal, and its thickness system is between 20 to 50 microns.
In one embodiment of the invention, above-mentioned semiconductor light emitting structure more comprises electrode, is positioned at a side of relative the second contact zone of the second epitaxial structure.
In one embodiment of the invention, above-mentioned these an epitaxial structures relatively side of these contact zones have coarse structure.
In one embodiment of the invention, above-mentioned semiconductor light emitting structure more comprises insulating barrier and substrate, insulating barrier coated with conductive supporting construction, but the support structure of expose portion, the expose portion of electrical property of substrate coupling support structure.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and coordinate appended graphicly, be described in detail below.
Accompanying drawing explanation
Fig. 1 is existing LED sides schematic diagram.
Fig. 2 is existing light-emitting diode array schematic top plan view.
Fig. 3 is existing crystal-coated light-emitting diodes side schematic view.
Fig. 4 A to 4H is that one embodiment of the invention are about crystal covering type semiconductor light emitting structure side direction generalized section.
Fig. 4 I is the schematic top plan view of the light-emitting diode of Fig. 4 E.
Fig. 5 is sense of current schematic diagram in the light emitting diode construction of Fig. 4 H.
Fig. 6 A to 6B is that another embodiment of the present invention develop is about the side direction generalized section of semiconductor light emitting structure.
Fig. 6 C is the circuit diagram of semiconductor light emitting structure that another embodiment of the present invention develops.
Fig. 7 A to 7B is that another embodiment of the present invention develop is about the side direction generalized section of semiconductor light emitting structure.
Fig. 7 C is the circuit diagram of semiconductor light emitting structure that another embodiment of the present invention develops.
Embodiment
The technology of the present invention is suitable for being applied in light-emitting diode, especially crystal-coated light-emitting diodes.Refer to Fig. 4 A to 4H, Fig. 4 A to 4H is that one embodiment of the invention are about crystal covering type semiconductor light emitting structure side direction generalized section.First, provide substrate 20, its material can be silicon, carborundum, aluminium, aluminium oxide, gallium nitride, indium nitride, aluminium nitride, zinc oxide, sapphire, glass, quartz or its combination, but is not limited to this.In addition, substrate comprises polarization (polar) substrate, semipolar (semi-polar) substrate or non-polarized (non-polar) substrate.
Then, refer to Fig. 4 A, on substrate 20, form epitaxial layer 21, for example, on substrate 20, form the first electrical semiconductor layer 211, then form the first luminescent layer (not shown) on the first electrical semiconductor layer 211, then on the first luminescent layer, form the second electrical semiconductor layer 212.Those electrical semiconductor layers 211,212 electrically contrary, for example, the first electrical semiconductor layer 211 is N-type doped layer, the second 212 of electrical semiconductor layers are P type doped layer, and both is electrically interchangeable, the material of its doping can be III-nitride, such as indium nitride (InN), gallium nitride (GaN), aluminium nitride (AlN), InGaN (InGaN), indium nitride gallium aluminium (InAlGaN) etc., but be not limited to above-mentioned.And the material of substrate 20 can be made and change according to the material of epitaxial structure.In addition, luminescent layer can be individual layer quantum well structures or multiple quantum trap structure.
Then, definition epitaxial layer 21, definition mode can be utilized micro image etching procedure, can in epitaxial layer 21, form at least two epitaxial structures, for ease of explanation, it is example that the present embodiment be take three epitaxial structures, it is respectively the first epitaxial structure 31, the second epitaxial structure 32, the 3rd epitaxial structure 33(as shown in Figure 4 B), and the second epitaxial structure 32 is between the first epitaxial structure 31 and the 3rd epitaxial structure 33, and in those epitaxial structures 31, 32, between 33, form hole 22, 23, and hole 22, 23 bottom surface 22a, 23a is deeply to the first electrical semiconductor layer 211, and those epitaxial structures 31, 32, 33 surface has respectively the second contact zone 31s, 32s, 33s.In addition, it should be noted that the area width of hole 22,23 is almost suitable with the width of those epitaxial structures 31,32,33, so that form tabular support structure in successive process.
Refer to Fig. 4 A to Fig. 4 C, in the present embodiment, can on those second contact zones 31s, 32s, 33s, pass through micro image etching procedure, form respectively the second ohmic contact layer 311,321,331, then, part bottom surface 22a, the 23a of lithography hole 22,23, be etched to and expose substrate 20 surfaces, with separated those epitaxial structures 31,32,33, make to form each other the first opening 22 ', 23 '.In addition, define the second ohmic contact layer 311,321,331 and the first opening 22 ', 23 ', can in micro image etching procedure, complete, to save man-hour.
Please refer to Fig. 4 C and Fig. 4 D, the opposing sidewalls of the first epitaxial structure 31 and the second epitaxial structure 32 is the two side 221 of the first opening 22 ', 222, and the opposing sidewalls of the second epitaxial structure 32 and the 3rd epitaxial structure 33 is the two side 231 of the first opening 23 ', 232, in those sidewalls 221, 222, 231, the 232 and second ohmic contact layer 311, 321, 331 edges form the first insulation system 34, 34a, 34b, and, the first insulation system 34a is respectively from the second ohmic contact layer 311, 321 edges are along sidewall 221, 231 extend to the surface of the first electrical semiconductor layer 211 in the first opening 22 ', and the surface of the first electrical semiconductor layer 211 not covered by the first insulation system 34a is the first contact zone 22s, 23s, in other words, the first contact zone 22s and 23s lay respectively on the first electrical semiconductor layer 211 of the first epitaxial structure 31 and on the first electrical semiconductor layer 211 of the second epitaxial structure 32.In addition, the first insulation system 34b extends to the surface of substrate 20 the first opening 23 ' from the second ohmic contact layer 321,331 edges respectively along sidewall 222,232.
Wherein, the material of the first insulation system can comprise transparent oxide, for example silicon dioxide (SiO2), silicon nitride (Si3N4), titanium dioxide (TiO2), tantalum oxide (Tantalum pentoxide, Ta2O5) etc., but be not limited to this.It should be noted that and see through the first insulation system 34, the coated epitaxial structure 31,32,33 of 34a, 34b, can reach the object of protection epitaxial structure stability.
Then, please refer to Fig. 4 C, Fig. 4 E and Fig. 4 I, Fig. 4 I is the schematic top plan view of the light-emitting diode of Fig. 4 E.In the first contact zone 22s, 23s is upper and the second ohmic contact layer 311,321,331 on form support structure 37a, 37b, and in the upper support structure 37c that forms of the first insulation system 34b, and first support structure 37a, 37b in opening 22 ' and the 37c support structure on the second ohmic contact layer 321 sequentially link together, and form support structure 37, and the support structure 37 that is positioned at the first opening 23 ' and the second ohmic contact layer 331 is also like this.In addition, the method for formation support structure 37 can comprise plating or evaporation processing procedure.
In the present embodiment, on the second contact zone 31s, 32s, 33s, there is the second ohmic contact layer 311,321,331, and support structure 37 electrical couplings the second ohmic contact layers 311,321,331, and direct nurse difficult to understand contacts the first contact zone 22s, 23s, make between those epitaxial structures 31,32,33 sequentially electrical couplings.
Material about the second ohmic contact layer 311,321,331 and support structure 37, if the second electrical semiconductor layer 212 is N-type doped layer, 311,321,331 of the second ohmic contact layers are N-type nurse contact difficult to understand, its material can for example, by titanium, aluminium, chromium, platinum, gold forms group one or a combination set of, chromium/platinum/gold (Cr/Pt/Au), titanium/aluminium/platinum/gold (Ti/Al/Pt/Au) or titanium/platinum/gold (Ti/Pt/Au); The first electrical semiconductor layer 211 is p type semiconductor layer, 37 of the support structure of electrical couplings are the reflective nurse contact difficult to understand of P type (reflective ohmic contact) with it, material can be by nickel, platinum, silver, group one or a combination set of that tin indium oxide forms, for example nickel/silver (Ni/Ag), nickel/platinum/silver (Ni/Pt/Ag) or tin indium oxide/silver (ITO/Ag), in crystal-coated light-emitting diodes, can be effectively by light reflection to exiting surface.Otherwise if the electrical exchange of the first electrical semiconductor layer 211 and the second electrical semiconductor layer 212, the second ohmic contact layer 311,321,331 is the reflective nurse contact difficult to understand of P type, and support structure 37 is the nurse contact of N-type Austria.
(not shown) in another embodiment of the present invention, can not form the second ohmic contact layer, but respectively at upper formation the first ohmic contact layer of the first contact zone 22s, 23s, form again afterwards support structure, make support structure electrical couplings the first ohmic contact layer, and direct nurse difficult to understand contacts the second contact zone 31s, 32s, 33s, make accordingly between those epitaxial structures 31,32,33 sequentially electrical couplings.In addition, similar with precedent, if the first electrical semiconductor layer 211 is p type semiconductor layer, the first ohmic contact layer of electrical couplings is the reflective nurse contact difficult to understand of P type with it, is that N-type nurse difficult to understand contacts with the support structure of the second electrical semiconductor layer 212 electrical couplings; Vice versa.
It should be noted that, support structure 37 of the present invention is non-as very thin (as Fig. 2) as the interconnect 13 of prior art, hold as aforementioned, hole 22, 23 width and those epitaxial structures 31, 32, 33 width is almost suitable, in other words, the first opening 22 ', 23 ' width W 1 and those epitaxial structures 31, 32, 33 width W 2 is suitable (as Fig. 4 I) almost, therefore, support structure 37 can form platy structure, and there is the thickness of 20 to 50 microns, see through the platy structure with one fixed width and thickness, make support structure be difficult for breaking because of external force collision, and can protect epitaxial structure, to reach the object of improving prior art disappearance.
Please refer to Fig. 4 C and Fig. 4 F, except the support structure 37b on the first epitaxial structure 31 maintains exposure, in the support structure of other part, all by the second insulation system 40, covered, therefore, the first opening 22 ', 23 ' also fills up the second insulation system 40.Then, electrically-conductive backing plate 41 is formed on the second insulation system 40, and the support structure 37b on electrical couplings the first epitaxial structure 31.Electrically-conductive backing plate 41 is for example circuit board, or can pass through electrically-conductive backing plate 41, is coupled to (not shown) on circuit board, and strengthens the steadiness of light emitting diode construction after being convenient to.Material about circuit board (Printed circuit board is called for short PCB) can be metal base printed circuit board (metal core PCB), Copper Foil printing-type circuit board, ceramic substrate or silicon substrate.
Please refer to Fig. 4 G, structure upset (flip) 180 degree that Fig. 4 F is painted, if substrate 20 is opaque material, substrate 20 can be removed, expose the bottom surface of those epitaxial structures 31,32,33, bottom surface can be the first electrical semiconductor layer 211, or other functional layer, as undoped gallium nitride layer (u-GaN) or nucleating layer (nucleation), roughening processing procedure is carried out in this bottom surface, to form coarse structure R, making increases light-emitting area or efficiency because compound the produced light in electronics electricity hole is scattered in epitaxial structure.
Then, please refer to Fig. 4 H, in the upper electrode 42 that forms of coarse structure R, electrode 42 can comprise nurse contact structures difficult to understand (ohmic contact), and its material, as aforementioned, depends on the electrical of adjacent with it semiconductor layer, in this, repeats no more.Accordingly as shown in Fig. 4 H, complete the light-emitting diode 100 that one embodiment of the invention develop, it is applied to voltage and the electric current E that produces in the inner can be from electrode 42 through the 3rd epitaxial structure 33, sequentially via support structure 37b, 37c, 37a, pass to the second epitaxial structure 32, then the support structure 37b(that order passes to the first epitaxial structure 31 according to this as shown in Figure 5).
It should be noted that, as previously mentioned, the present invention, when epitaxial layer 21 definition epitaxial structure, at least forms two epitaxial structures, therefore, in another embodiment, also can only form the first epitaxial structure 31 and the 3rd epitaxial structure 33, imagine in Fig. 4 B and Fig. 4 H, not have the second epitaxial structure 32 and the first opening 23, leave the first opening 22, in order to complete two light-emitting diode cascaded structures with support structure.
Certainly, in another embodiment, also can between the first epitaxial structure 31 and the 3rd epitaxial structure 33, define a plurality of the second epitaxial structures 32, form a plurality of light-emitting diode cascaded structures with support structure.
In another embodiment of the present invention, the epitaxial layer in the comparable previous embodiment of epitaxial layer comprises more multi-semiconductor layer, to complete a plurality of series-parallel structures of light-emitting diode with support structure.Please refer to Fig. 6 A, Fig. 6 A is the side direction generalized section of semiconductor light emitting structure that another embodiment of the present invention develops.Epitaxial layer 21 ' is compared with aforementioned epitaxial layer 21, on the second electrical semiconductor layer 212, form again the second luminescent layer 21b, on the second luminescent layer 21b, form again the first electrical semiconductor layer 213, accordingly, definition epitaxial layer 21 ', form a plurality of epitaxial structures, between those epitaxial structures, there is the first opening, wherein two epitaxial structures are respectively the first epitaxial structure 51 and the second epitaxial structure 52, the two side of the first opening is by the first insulation system 54a, 54b covers, the bottom-exposed of the first opening goes out the first electrical semiconductor layer 211, respectively as the first contact zone 51s of the first epitaxial structure 51 and the second epitaxial structure 52, 52s.Then, between those epitaxial structures 51,52, definition etches the second opening, in order to expose the surface of the second electrical semiconductor layer 212, to form the second contact zone, the surface of the first not etched electrical semiconductor layer 213 forms the 3rd contact zone 213s.Then, can on the second contact zone of these epitaxial structures 51,52, form respectively the second ohmic contact layer 511,521.
In the present embodiment, between epitaxial structure 51,52, form support structure 57a, 57b, 57c, be covered in respectively the first contact zone 51s, 52s and the second ohmic contact layer 511,521 and the 3rd contact zone 213s.Again in support structure 57a, 57b, upper covering the second insulation system 40 of 57c, but can retain the support structure 57c on the first epitaxial structure 51, in order to be coupled with conductor substrate 41, again structure is turned over to turnback, in the end surface forming electrode 42 (as shown in Figure 6B) of the second epitaxial structure 52.In the present embodiment, the first electrical semiconductor layer 211,213 is N-type doped layer, and the second electrical semiconductor layer 212 is P type doped layer, forms the series-parallel structure of NPN light-emitting diode, and its circuit diagram as shown in Figure 6 C.
Please refer to Fig. 7 A, Fig. 7 A is that another embodiment of the present invention develop is about the side direction generalized section of semiconductor light emitting structure.In another embodiment, similar structures for last embodiment, difference be to replace semiconductor layer in epitaxial structure electrically, for example, the first electrical semiconductor layer 211,213 is P type doped layer, the second electrical semiconductor layer 212 is N-type doped layer, and those epitaxial structures have the first opening and the second opening equally.Then, the the second electrical semiconductor layer 212 exposing in the second opening, on it, there is the second contact zone 212s, and on the first not etched electrical semiconductor layer 213, there is the 3rd contact zone, on the 3rd contact zone, can there is the 3rd ohmic contact layer 61,62, lay respectively on the first epitaxial structure 51 and the second epitaxial structure 52.After covering crystalline substance, can complete the series-parallel structure of PNP light-emitting diode as shown in Figure 7 B, its circuit diagram is as shown in Fig. 7 C.
In addition, light-emitting diode is suitable for h ν=Eg (Planck's constant h, frequency v, energy gap Eg) theory, if change the material category of epitaxial structure, can change Eg value, also just can change light wavelength (λ=1/ ν), also just can send the light of different colours.
In sum, by tabular support structure and insulation system, to strengthen the steadiness of semiconductor light emitting structure, even when being subject to external force collision or carrying out laser cutting element, support structure and epitaxial structure are difficult for therefore impaired, to improve the reliability of element.Arrange in pairs or groups the again packaged type of crystal-coated light-emitting diodes, by the setting of support structure, to strengthen luminous efficiency and heat dissipation.
The above, only embodiments of the invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with embodiment, yet not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (18)
1. a manufacture method for semiconductor light emitting structure, its step comprises:
One first substrate is provided;
On this first substrate, form an epitaxial layer, wherein this epitaxial layer comprises one first electrical semiconductor layer, one second electrical semiconductor layer and one first luminescent layer between these electrical semiconductor layers;
Cut apart this epitaxial layer, and define one first epitaxial structure and one second epitaxial structure, and expose this first electrical semiconductor layer of part, and wherein on the expose portion of this first electrical semiconductor layer, there is one first contact zone, on this second electrical semiconductor layer, there is one second contact zone; And
Form a support structure, cover this first contact zone and this second contact zone, make this this second epitaxial structure of the first epitaxial structure electrical couplings.
2. the manufacture method of semiconductor light emitting structure as claimed in claim 1, it is characterized in that: its step more comprises that formation one first ohmic contact layer is on this first contact zone, make this first ohmic contact layer of this support structure electrical couplings, and direct nurse difficult to understand contacts this second contact zone.
3. the manufacture method of semiconductor light emitting structure as claimed in claim 1, it is characterized in that: its step more comprises that formation one second ohmic contact layer is on this second contact zone, make this second ohmic contact layer of this support structure electrical couplings, and direct nurse difficult to understand contacts this first contact zone.
4. the manufacture method of semiconductor light emitting structure as claimed in claim 1, is characterized in that its step more comprises:
In forming the step of this epitaxial layer, form one the 3rd electrical semiconductor layer on this second electrical semiconductor layer, and between it, there is one second luminescent layer, wherein the 3rd electrical semiconductor layer and this first electrical semiconductor layer have identical electrically, and have contrary electrical with this second electrical semiconductor layer;
In cutting apart the step of this epitaxial layer, expose this second electrical semiconductor layer of part simultaneously, wherein on the 3rd electrical semiconductor layer, there is one the 3rd contact zone; And
In forming the step of this support structure, cover the 3rd contact zone and this first contact zone on this first epitaxial structure simultaneously, and this second contact zone on this second epitaxial structure.
5. the manufacture method of semiconductor light emitting structure as claimed in claim 1, is characterized in that its step more comprises:
Form one second insulation system, in order to cover this support structure, but this support structure of expose portion;
Provide a second substrate, the expose portion of this support structure of electrical couplings; And
Remove this first substrate, in order to expose a side of these epitaxial structures.
6. the manufacture method of semiconductor light emitting structure as claimed in claim 5, it is characterized in that its step more comprises carries out a roughening processing procedure by this side of these epitaxial structures.
7. the manufacture method of semiconductor light emitting structure as claimed in claim 5, is characterized in that: its step more comprises that formation one electrode is in this side of this second epitaxial structure or this first epitaxial structure.
8. the manufacture method of semiconductor light emitting structure as claimed in claim 1, is characterized in that: the method that forms this support structure comprises carries out a plating or evaporation processing procedure.
9. a semiconductor light emitting structure, it comprises:
One first epitaxial structure, has one first contact zone;
One second epitaxial structure, has one second contact zone; And
One support structure, coated this first contact zone and this second contact zone, make this this second epitaxial structure of the first epitaxial structure electrical couplings.
10. semiconductor light emitting structure as claimed in claim 9, it is characterized in that: described semiconductor light emitting structure more comprises one first ohmic contact layer, be formed on this first contact zone, and this first ohmic contact layer of this support structure electrical couplings, and direct nurse difficult to understand contacts this second contact zone.
11. semiconductor light emitting structures as claimed in claim 9, it is characterized in that: described semiconductor light emitting structure more comprises one second ohmic contact layer, be formed on this second contact zone, and this second ohmic contact layer of this support structure electrical couplings, and direct nurse difficult to understand contacts this first contact zone.
12. semiconductor light emitting structures as claimed in claim 9, it is characterized in that: described semiconductor light emitting structure more comprises one first ohmic contact layer and one second ohmic contact layer, be formed at respectively on this first contact zone and this second contact zone, wherein the material of this support structure is identical with the material of this first ohmic contact layer or this second ohmic contact layer.
13. semiconductor light emitting structures as claimed in claim 9, is characterized in that this first epitaxial structure and this second epitaxial structure all comprise:
One first electrical semiconductor layer, has this first contact zone;
One second electrical semiconductor layer, has this second contact zone, and has contrary electrical with this first electrical semiconductor layer; And
One first luminescent layer, between this first electrical semiconductor layer and this second electrical semiconductor layer.
14. semiconductor light emitting structures as claimed in claim 13, it is characterized in that: this first epitaxial structure and this second epitaxial structure all comprise one second luminescent layer and one the 3rd electrical semiconductor layer, and this second luminescent layer is between the 3rd electrical semiconductor layer and this second electrical semiconductor layer, the 3rd electrical semiconductor layer has identical electrical with this first electrical semiconductor layer, and on it, there is one the 3rd contact zone, this support structure covers the 3rd contact zone and this first contact zone on this first epitaxial structure, and this second contact zone on this second epitaxial structure.
15. semiconductor light emitting structures as claimed in claim 9, is characterized in that: the material of this support structure is metal, and its thickness is between 20 to 50 microns.
16. semiconductor light emitting structures as claimed in claim 9, is characterized in that: described semiconductor light emitting structure more comprises an electrode, are positioned at this second epitaxial structure side of this second contact zone relatively.
17. semiconductor light emitting structures as claimed in claim 9, is characterized in that: these an epitaxial structures relatively side of these contact zones have a coarse structure.
18. semiconductor light emitting structures as claimed in claim 9, it is characterized in that: described semiconductor light emitting structure more comprises an insulating barrier and a substrate, this insulating barrier is coated this support structure, but this support structure of expose portion, the be coupled expose portion of this support structure of this electrical property of substrate.
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| US20100072489A1 (en) * | 2008-09-24 | 2010-03-25 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices grown on composite substrates |
| CN101752399A (en) * | 2008-12-17 | 2010-06-23 | 首尔半导体株式会社 | Light emitting diode having a plurality of light emitting cells and method of fabricating the same |
| CN101828270A (en) * | 2007-10-15 | 2010-09-08 | Lg伊诺特有限公司 | Light emitting device and method for fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101828270A (en) * | 2007-10-15 | 2010-09-08 | Lg伊诺特有限公司 | Light emitting device and method for fabricating the same |
| US20100072489A1 (en) * | 2008-09-24 | 2010-03-25 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices grown on composite substrates |
| CN101752399A (en) * | 2008-12-17 | 2010-06-23 | 首尔半导体株式会社 | Light emitting diode having a plurality of light emitting cells and method of fabricating the same |
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Application publication date: 20140212 |