CN103579032A - Method and system for testing power semiconductor module packaging technology - Google Patents
Method and system for testing power semiconductor module packaging technology Download PDFInfo
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- CN103579032A CN103579032A CN201210254531.4A CN201210254531A CN103579032A CN 103579032 A CN103579032 A CN 103579032A CN 201210254531 A CN201210254531 A CN 201210254531A CN 103579032 A CN103579032 A CN 103579032A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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Abstract
The invention discloses a method and system for testing the power semiconductor module chip welding technology, a method and system for testing the power semiconductor module aluminum wire bonding technology, and a method and system for testing the packaging technology comprising the chip welding technology and the aluminum wire bonding technology. According to the method and system, an electric heating device is used for simulating working conditions, the impulse voltage/current is applied to the electric heating device, and/or the loop testing voltage/current is applied to heat a tested piece after chip welding, or the working voltage/current and/or the loop testing voltage/current are/is applied to a tested piece after aluminum wire bonding, and a heat infrared imager is adopted to conduct temperature field distribution testing on the tested piece. Whether the chip welding technology and/or the aluminum wire bonding technology have/has defects or not is determined according to the fact whether the temperature field distribution condition of the tested piece or an aluminum wire bonding point of the tested piece is abnormal or not. Dynamic monitoring on the chip welding technology and/or the aluminum wire bonding technology under actual working conditions is achieved, and the testing cost is reduced.
Description
Technical field
The present invention relates to semiconductor test technology, particularly the method for testing of power semiconductor modular packaging technology and system.
Background technology
At present, insulation bipolar transistor (IGBT) constant power semiconductor device exists working procedures in encapsulation process: chips welding, and------------perfusion silicon gel---glue curing---is installed cover plate, screw etc. to mounting casing to aluminum wire bonding for soldering copper base plate and DBC.Wherein, the most key technique is the bonding of chips welding and aluminum steel, effectively detects the quality of these two large critical processes, has obviously become one of necessary program of guaranteeing final whole module normal operation.
Detection for the technique of chips welding, aspect industrial production, mainly adopt X ray detection technique to detect both at home and abroad, this detection is the image-forming principle of utilizing X ray, X ray is mapped on the chip having welded, by the mode of imaging, whether have cavity, if there is cavity, illustrate that welding is bad if observing weld.
Detection for the technique of aluminum wire bonding has two kinds of modes to detect aspect industrial production, a kind of the same with the detection method of chips welding technique, adopts X ray detection technique to detect.Another kind is the mode by tensile test, detects the pulling force that the aluminum steel after bonding can bear, and the power of the pulling force bearing according to it judges the quality of the technique of aluminum wire bonding.
Conventionally, X ray detection technique needs very expensive equipment, and is from static angle, to go the quality of characterization processes, and this also can not represent such welding procedure and the aluminum wire bonding actual conditions under operating mode.And the mode that adopts tensile test detects aluminum wire bonding and also has same problem.
Summary of the invention
In view of this, main purpose of the present invention is to provide method of testing and the system of a kind of method of testing of power semiconductor modular chips welding technique and system, a kind of power semiconductor modular aluminum wire bonding technique, with the method for testing and the system that comprise the packaging technology of chips welding technique and aluminum wire bonding process test, to realize testing of chips welding technique and/or aluminum wire bonding technique under actual working conditions.
For the aspect achieving the above object, the invention provides a kind of method of testing and system of power semiconductor modular chips welding technique.
The method of testing of power semiconductor modular chips welding technique provided by the invention, after completing, the chips welding technique of power semiconductor modular carries out following steps:
A, the measured piece after chips welding technique is completed are placed on electric heating device, the two is fitted tightly and fix;
B, simulation actual condition apply different pulse voltage/electric currents to electric heating device; And/or apply loop test voltage/current;
C, employing thermal infrared imager carry out temperature field distribution tests to measured piece;
D, according to the temperature field distribution situation of measured piece, whether have extremely, determine whether defectiveness of chips welding technique.
Preferably, described step D is: judge in the temperature field of measured piece whether have the point higher than mean temperature predetermined number of degrees with respect, determine that this puts corresponding chip position welding procedure and have cavity blemish.
Preferably, described predetermined number of degrees with respect can be set to 1-25 degree Celsius.
Preferably, in advance experimental results is added up, set up temperature field abnormal distribution situation and chips welding defective workmanship and quantifying defects value corresponding relation database; Described step D is: in described database, search the temperature field distribution situation of described measured piece, if found, define its corresponding chips welding defective workmanship, and provide quantifying defects value.
Preferably, electric current and the voltage of the further Real-Time Monitoring electric heating device of the method, according to current electric current and voltage, adjust the pulse voltage that electric heating device is applied.
Preferably, the method further adopts cooling device to carry out radiating and cooling to measured piece, and the temperature of Real-Time Monitoring measured piece, according to current temperature value, adjusts the running parameter of cooling device.
The test macro of realizing the method for testing of said chip welding procedure provided by the invention, comprising: power subsystem, control unit, high-current switch module and driver element, electric heating device, thermal infrared imager and host computer;
Described control unit is connected respectively with host computer with power subsystem, described driver element, and this power subsystem is also connected with high-current switch module, and this driver element is also connected with high-current switch module, and described high-current switch module is also connected with electric heating device; Described host computer is also connected with thermal infrared imager;
Measured piece after chips welding technique completes is placed on electric heating device, and the two fits tightly fixing;
The test parameter of the different operating modes that described control unit sends according to host computer, by controlling power subsystem and driver element, controlling described high-current switch module is that electric heating device applies different pulse voltage/electric currents; And/or apply loop test voltage/current;
The test parameter that described host computer produces different operating modes sends to control unit, and receive the temperature data of the measured piece that thermal infrared imager sends, whether the temperature field distribution character that obtains measured piece, have extremely according to the temperature field distribution situation of measured piece, determines whether defectiveness of chips welding technique.
Preferably, this system also comprises the data storage device being connected with host computer; Described data storage device, pre-stored temperature field abnormal distribution situation and chips welding defective workmanship and quantifying defects value corresponding relation database; Described host computer is searched the temperature field distribution situation of described measured piece in described database, if found, defines its corresponding chips welding defective workmanship, and provides quantifying defects value.
Preferably, this system further comprises current sensor and the voltage sensor being connected with electric heating device; Described current sensor and voltage sensor send to control unit by the electric current of electric heating device and voltage in real time; Described control unit, further according to current electric current and voltage, is adjusted pulse voltage/electric current and/or loop test voltage/current that electric heating device is applied.
Preferably, this system further comprises the cooling device being arranged under measured piece and the temperature sensor being attached thereto; Control unit further receives the temperature signal that temperature sensor sends, and according to the temperature of measured piece, to cooling device, sends running parameter, and controlling cooling device is measured piece cooling.
Preferably, described control unit is connected with warning circuit, and control unit, when the electric current of electric heating device and/or electric voltage exception, turn-offs electric heating device by driver element, and controls warning circuit and send sound and/or visual alarm.
For second aspect achieving the above object, the invention provides a kind of method of testing and system of power semiconductor modular aluminum wire bonding technique.
The method of testing of power semiconductor modular aluminum wire bonding technique provided by the invention, after completing, the aluminum wire bonding technique of power semiconductor modular carries out following steps:
Measured piece after a, simulation actual condition complete aluminum wire bonding technique applies different operating voltage/electric currents; And/or apply loop test voltage/current;
B, employing thermal infrared imager carry out temperature field distribution tests to the aluminum wire bonding point of measured piece;
C, according to the temperature field of the aluminum wire bonding point of measured piece, distribute and whether have extremely, determine whether defectiveness of aluminum wire bonding technique.
Preferably, described step c is: judge in the aluminum wire bonding point temperature field of measured piece whether have the point higher than mean temperature predetermined number of degrees with respect, determine that this bonding technology of putting corresponding aluminum wire bonding point has crack defect.
Preferably, described predetermined number of degrees with respect can be set to 1-25 degree Celsius.
Preferably, in advance experimental results is added up, set up temperature field abnormal distribution situation and aluminum wire bonding defective workmanship and the quantifying defects value corresponding relation database of aluminum wire bonding point; Described step c is: in described database, search the temperature field distribution situation of the aluminum wire bonding point of described measured piece, if found, define its corresponding aluminum wire bonding defective workmanship, and provide quantifying defects value.
Preferably, electric current and the voltage of the further Real-Time Monitoring measured piece of the method, according to current electric current and voltage, adjust operating voltage/electric current and/or loop test voltage/current that measured piece is applied.
Preferably, the method further adopts cooling device to carry out radiating and cooling to measured piece, and the temperature of Real-Time Monitoring measured piece, according to current temperature value, adjusts the running parameter of cooling device.
The test macro of realizing the method for testing of described aluminum wire bonding technique provided by the invention, comprising: power subsystem, control unit, high-current switch module and driver element, thermal infrared imager and host computer;
Described control unit is connected respectively with host computer with power subsystem, described driver element, this power subsystem is also connected with high-current switch module, this driver element is also connected with high-current switch module, and the measured piece after described high-current switch module completes with bonding technology by lead-in wire is connected; Described host computer is also connected with thermal infrared imager;
The test parameter of the different operating modes that described control unit sends according to host computer, by controlling power subsystem and driver element, controls described high-current switch module measured piece is applied to different operating voltage/electric currents, and/or apply loop test voltage/current;
The test parameter that described host computer produces different operating modes sends to control unit, and receive the temperature data of the aluminum wire bonding point of the measured piece that thermal infrared imager sends, obtain the temperature field distribution character of the aluminum wire bonding point of measured piece, according to the temperature field distribution situation of the aluminum wire bonding point of measured piece, whether have extremely, determine whether defectiveness of aluminum wire bonding technique.
Preferably, this system also comprises the data storage device being connected with host computer; Described data storage device, pre-stored temperature field abnormal distribution situation and aluminum wire bonding defective workmanship and quantifying defects value corresponding relation database; Described host computer is searched the temperature field distribution situation of the aluminum wire bonding point of described measured piece in described database, if found, defines its corresponding aluminum wire bonding defective workmanship, and provides quantifying defects value.
Preferably, this system further comprises current sensor and the voltage sensor being connected with measured piece; Described current sensor and voltage sensor send to control unit by the electric current of measured piece and voltage in real time; Described control unit, further according to current electric current and voltage, is adjusted operating voltage/electric current and/or loop test voltage/current that measured piece is applied.
Preferably, this system further comprises the cooling device being arranged under measured piece and the temperature sensor being attached thereto; Control unit further receives the temperature signal that temperature sensor sends, and according to the temperature of measured piece, to cooling device, sends running parameter, and controlling cooling device is measured piece cooling.
Preferably, described control unit is connected with warning circuit, and control unit, when the electric current of measured piece and/or electric voltage exception, turn-offs measured piece by driver element, and controls warning circuit and send sound and/or visual alarm.
For the 3rd aspect achieving the above object, the invention provides a kind of method of testing and system of power semiconductor modular packaging technology.
The method of testing of power semiconductor modular packaging technology provided by the invention is carried out the testing procedure of above-mentioned chips welding technique after chips welding technique completes; After completing, aluminum wire bonding technique carries out the testing procedure of above-mentioned aluminum wire bonding technique.
The test macro of power semiconductor modular packaging technology provided by the invention, comprises the test macro of above-mentioned chips welding technique and the test macro of aluminum wire bonding technique.
As seen from the above technical solutions, the present invention's electric heating device simulated condition, by applying pulse voltage/electric current to electric heating device, and/or apply the measured piece heating of loop test voltage/current after to chips welding, or simulated condition, applies operating voltage/electric current to the measured piece after aluminum wire bonding, and/or apply loop test voltage/current, adopt thermal infrared imager to carry out temperature field distribution tests to measured piece; Whether the temperature field distribution character that obtains measured piece or its aluminum wire bonding point, have extremely according to the temperature field distribution situation of measured piece or its aluminum wire bonding point, determines whether defectiveness of chips welding technique and/or aluminum wire bonding technique.Realize testing of chips welding technique and/or aluminum wire bonding technique under actual working conditions, compared with prior art, do not needed to use expensive X-ray equipment, reduced testing cost.
In addition, the present invention is in the situation that apply loop test voltage/current to the measured piece after electric heating device or aluminum wire bonding, can realize on-line monitoring, for a long time can be according to the real-time change in temperature field after loop test, reflection is brought the whole process of destruction by defect, thereby realizes dynamic monitoring.
Accompanying drawing explanation
Fig. 1 is the flow chart of method of testing one preferred embodiment of power semiconductor modular chips welding technique of the present invention;
Fig. 2 is the test system structure figure that realizes a preferred embodiment of method of testing shown in Fig. 1;
Fig. 3 is the flow chart of method of testing one preferred embodiment of a kind of power semiconductor modular aluminum wire bonding of the present invention technique;
Fig. 4 is the test system structure figure that realizes a preferred embodiment of method of testing shown in Fig. 3.
Embodiment
Referring to accompanying drawing, developing simultaneously, the present invention is described in detail for specific embodiment.
The invention provides method of testing and the system of a kind of method of testing of power semiconductor modular chips welding technique and system, a kind of power semiconductor modular aluminum wire bonding technique, with the method for testing and the system that comprise the packaging technology of chips welding technique and aluminum wire bonding process test, to realize testing of chips welding technique and/or aluminum wire bonding technique under actual working conditions.
Below for embodiment, describe respectively.
First, the method for testing of power semiconductor modular chips welding technique of the present invention is described.
As shown in Figure 1, method of testing one preferred embodiment of power semiconductor modular chips welding technique of the present invention comprises the steps:
In the present embodiment, measured piece is the DBC module of having welded chip.For measured piece is heated evenly, can adopt the heating resistor that matches with measured piece size or heating member as electric heating device.
In the present embodiment, can also carry out Real-Time Monitoring to the electric current of electric heating device and voltage, according to current electric current and voltage, adjust pulse voltage/electric current that electric heating device is applied; And/or loop test voltage/current.
The present invention, by electric heating device being applied to loop test voltage/current, can realize on-line monitoring, for a long time can be according to the real-time change in temperature field after loop test, and reflection brings the whole process of destruction by defect, thereby realizes dynamic monitoring.
The thermal infrared imager adopting in the present embodiment can be existing conventional thermal infrared imager.
Whether step 104, have extremely according to the temperature field distribution situation of measured piece, determines whether defectiveness of chips welding technique.
In the present embodiment, can adopt in two ways and to determine whether defectiveness of chips welding technique.
The first: judge in the temperature field of measured piece whether have the point higher than mean temperature predetermined number of degrees with respect, determine that this puts corresponding chip position welding procedure and have cavity blemish.
In practical application, predetermined number of degrees with respect can be set to 1-25 degree Celsius.
The second: in advance great many of experiments test result is added up, set up temperature field abnormal distribution situation and chips welding defective workmanship and quantifying defects value corresponding relation database; In described database, search the temperature field distribution situation of described measured piece, if found, define its corresponding chips welding defective workmanship, and provide quantifying defects value.
In addition, in the present embodiment, further adopt cooling device to carry out radiating and cooling to measured piece, and the temperature of Real-Time Monitoring measured piece, according to current temperature value, adjust the running parameter of cooling device.
Then, the test macro of the present invention being realized to the method for testing of upper chips welding technique describes.
As shown in Figure 2, for realizing the test macro of a preferred embodiment of method of testing shown in Fig. 1, comprise: power subsystem 201, control unit 202, high-current switch module 203 and driver element 204 thereof, electric heating device 205, thermal infrared imager 206, host computer 207, data storage device 208, current sensor 209, voltage sensor 210, cooling device 211, temperature sensor 212 and display unit 213.
Wherein, control unit 202 is connected respectively with power subsystem 201, driver element 204 and host computer 207, this power subsystem 201 is also connected with high-current switch module 203, this driver element 204 is also connected with high-current switch module 203, and high-current switch module 203 is also connected with electric heating device 205.Host computer 207 is also connected with thermal infrared imager 206.
As shown in Figure 2, the test parameter of the different operating modes that control unit 202 sends according to host computer 207, by controlling power subsystem 201 and driver element 204, controls high-current switch module 203 and applies different pulse voltage/electric currents for electric heating device 205; And/or apply loop test voltage/current.
As shown in Figure 2, the test parameter that host computer 207 can produce different operating modes sends to control unit 202, and receive the temperature data of the measured piece 200 that thermal infrared imager sends, obtain the temperature field distribution character of measured piece 200, according to the temperature field distribution situation of measured piece 200, whether have extremely, determine whether defectiveness of chips welding technique.
As shown in Figure 2, the test macro of the present embodiment has also comprised the data storage device 208 being connected with host computer 207, this data storage device 208, pre-stored temperature field abnormal distribution situation and chips welding defective workmanship and quantifying defects value corresponding relation database.Like this, host computer 207 just can be searched the temperature field distribution situation of described measured piece in described database, if found, defines its corresponding chips welding defective workmanship, and provides quantifying defects value.For example: weld empty size.
As shown in Figure 2, in order to obtain real-time current and the voltage of electric heating device 205, the warning circuit (not shown in Fig. 2) that the test macro of the present embodiment has also comprised current sensor 209, the voltage sensor 210 being connected with electric heating device 205 and has been connected with control unit 202.
As shown in Figure 2, overheated damaged in order to prevent measured piece 200, and the real time temperature of acquisition measured piece 200, the test macro of the present embodiment has also comprised the cooling device 211 being arranged under measured piece 200 and the temperature sensor 212 being attached thereto.Control unit 202 further receives the temperature signal that temperature sensor 212 sends, and according to the temperature of measured piece 200, to cooling device 211, sends running parameter, and controlling cooling device 211 is measured piece 200 coolings.
As shown in Figure 2, in the present embodiment, in order to see more intuitively the current current value of electric heating device 205, magnitude of voltage and temperature, be provided with display unit 213, for showing the current current value of electric heating device 205, magnitude of voltage and temperature.In addition, the current data such as current value, magnitude of voltage and temperature of heater element 205 also can send to host computer 207 to show.
In the present embodiment, control unit 202 can adopt DSP to realize, and high-current switch module 203 can adopt IGBT module to realize, and driver element 204 can be realized for the general driver module of IGBT module.Display unit 213 can be realized by LED display or LCD display.Cooling device 211 can adopt conventional cooling device, can be specifically that water cooling plant can be also air cooling equipment, for example: fan.Therefore, the running parameter that control unit 202 sends to cooling device 211, can be the wind speed of fan or the water flow velocity of water cooling plant.Concrete control mode is identical with prior art, repeats no more here.
Below the concrete course of work of this system is described.
Like this, in electric heating device 205 due to had the circulation of electric current just start heating, heat just can pass to measured piece 200 like this, the present embodiment is on the chip and DBC being welded in DBC module, mode by passive heating is generated heat welding chip and DBC, and the surface temperature field distribution of measured piece 200 gathers and is sent in host computer 207 by thermal infrared imager 206 like this.
While working due to chip, temperature must be in certain scope, can not be too high, so the present embodiment carries out radiating and cooling by 211 pairs to be measured 200 of cooling device, with the closed-loop control of control unit 202 formation temperatures.
When carrying out actual test, by searching database, judge whether measured piece 200 has chips welding defect.Data in database are in advance great many of experiments test result to be added up, the temperature field abnormal distribution situation of acquisition and chips welding defective workmanship and quantifying defects value corresponding relation.
Next, the method for testing of power semiconductor modular aluminum wire bonding technique of the present invention is elaborated.
As shown in Figure 3, method of testing one preferred embodiment of power semiconductor modular aluminum wire bonding technique of the present invention comprises the steps:
In the present embodiment, electric current and the voltage of all right Real-Time Monitoring measured piece, according to current electric current and voltage, adjust the operating current that measured piece is applied.
The thermal infrared imager adopting in the present embodiment can be existing conventional thermal infrared imager.
Whether step 303, distribute and have extremely according to the temperature field of the aluminum wire bonding point of measured piece, determines whether defectiveness of aluminum wire bonding technique.
In the present embodiment, can adopt equally in two ways and to determine whether defectiveness of aluminum wire bonding technique:
The first: judge in the aluminum wire bonding point temperature field of measured piece whether have the point higher than mean temperature predetermined number of degrees with respect, determine that this bonding technology of putting corresponding aluminum wire bonding point has crack defect.
In practical application, predetermined number of degrees with respect can be set to 1-25 degree Celsius.
The second: in advance great many of experiments test result is added up, set up temperature field abnormal distribution situation and aluminum wire bonding defective workmanship and the quantifying defects value corresponding relation database of aluminum wire bonding point.In described database, search the temperature field distribution situation of the aluminum wire bonding point of described measured piece, if found, define its corresponding aluminum wire bonding defective workmanship, and provide quantifying defects value.For example: the size of aluminum wire bonding crackle.
In addition, in the present embodiment, can also adopt cooling device to carry out radiating and cooling to measured piece, and the temperature of Real-Time Monitoring measured piece, according to current temperature value, adjust the running parameter of cooling device.
Then, to realizing the test macro of the method for testing of above-mentioned aluminum wire bonding technique, be elaborated.
As shown in Figure 4, for realizing the test macro of a preferred embodiment of method of testing shown in Fig. 3, comprise: power subsystem 401, control unit 402, high-current switch module 403, driver element 404, thermal infrared imager 405, host computer 406, data storage device 407, current sensor 408, voltage sensor 409, cooling device 401, temperature sensor 411 and display unit 412.
Wherein, control unit 402 is connected respectively with power subsystem 401, driver element 404 and host computer 406.This power subsystem 401 is also connected with high-current switch module 403, and this driver element 404 is also connected with high-current switch module 403.Measured piece 400 after this high-current switch module 403 completes with bonding technology by lead-in wire is connected, and this 406 host computer is also connected with thermal infrared imager 405.
As shown in Figure 4, the test parameter of the different operating modes that control unit 401 sends according to host computer 406, by controlling power subsystem 401 and driver element 404, controls 403 pairs of measured pieces 400 of high-current switch module and applies different operating voltage/electric currents; And/or loop test voltage/current.
The test parameter that host computer 406 produces different operating modes sends to control unit 402, and receive the temperature data of the aluminum wire bonding point of the measured piece 400 that thermal infrared imager 405 sends, obtain the temperature field distribution character of the aluminum wire bonding point of measured piece 400, according to the temperature field distribution situation of the aluminum wire bonding point of measured piece 400, whether have extremely, determine whether defectiveness of aluminum wire bonding technique.
As shown in Figure 4, the present embodiment system also comprises the data storage device 407 being connected with host computer 406.Data storage device 407, pre-stored temperature field abnormal distribution situation and aluminum wire bonding defective workmanship and quantifying defects value corresponding relation database.Like this, host computer 406 is searched the temperature field distribution situation of the aluminum wire bonding point of described measured piece 400 in described database, if found, defines its corresponding aluminum wire bonding defective workmanship, and provides quantifying defects value.
As shown in Figure 4, in order to prevent measured piece 400 overcurrents or overvoltage, and real-time current and the voltage of acquisition measured piece 400, the warning circuit (not shown in Fig. 2) that the test macro of the present embodiment has also comprised current sensor 408, the voltage sensor 409 being connected with measured piece 400 and has been connected with control unit 402.
As shown in Figure 4, overheated damaged in order to prevent measured piece 400, and the real time temperature of acquisition measured piece 400, the test macro of the present embodiment has also comprised the cooling device 410 being arranged under measured piece 400 and the temperature sensor 411 being attached thereto.Control unit 402 further receives the temperature signal that temperature sensor 411 sends, and according to the temperature of measured piece 400, to cooling device 410, sends running parameter, and controlling cooling device 410 is measured piece 400 coolings.
As shown in Figure 4, in the present embodiment, in order to see more intuitively the current current value of measured piece 400, magnitude of voltage and temperature, be provided with display unit 412, for showing the current current value of measured piece 400, magnitude of voltage and temperature.In addition, the current data such as current value, magnitude of voltage and temperature of measured piece 400 also can send to host computer 406 to show.
In the present embodiment, control unit 402 can adopt DSP to realize, and high-current switch module 403 can adopt IGBT module to realize, and driver element 404 can be realized for the general driver module of IGBT module.Display unit 412 can be with LED) display screen or LCD display realize.Cooling device 410 can adopt conventional cooling device, can be specifically that water cooling plant can be also air cooling equipment, for example: fan.Therefore, the running parameter that control unit 402 sends to cooling device 410, can be the wind speed of fan or the water flow velocity of water cooling plant.Concrete control mode is identical with prior art, repeats no more here.
Measured piece in the present embodiment has been DBC and the copper soleplate of aluminum wire bonding, in practical application, for the ease of test, can on DBC, reserve instrument connection, during test, inserts reserved instrument connection measured piece is connected with high-current switch module 403 by lead-in wire.
Below the concrete course of work of this system is described.
While working due to chip, there is the temperature must be in certain scope, can not be too high, by 410 pairs to be measured 400 of cooling device, carry out radiating and cooling, with the closed-loop control of control unit 402 formation temperatures.
When carrying out actual test, by searching database, judge whether measured piece 400 has aluminum wire bonding defect.Data in database are in advance great many of experiments test result to be added up, the temperature field abnormal distribution situation of acquisition and aluminum wire bonding defective workmanship and quantifying defects value corresponding relation.
Finally, it should be noted that, the method of testing of power semiconductor modular packaging technology provided by the invention, be exactly in power semiconductor modular encapsulation process, after chips welding technique completes, carry out the testing procedure of chips welding technique provided by the invention, and after aluminum wire bonding technique completes, carry out the testing procedure of aluminum wire bonding technique provided by the invention.
Equally, the test macro of power semiconductor modular packaging technology provided by the invention, is just comprised of the test macro of chips welding technique provided by the invention and the test macro of aluminum wire bonding technique.Concrete, can by two, independently chips welding process test system and aluminum steel be set up process test system and are realized, also can be realized by the test macro that shares thermal infrared imager, host computer and data storage device, its operation principle is with aforementioned identical, no longer repeat specification here.
Like this, in actual production process, adopt above-mentioned test macro, by above-mentioned testing procedure, determine chips welding technique and/or the aluminum wire bonding technique defectiveness of certain product, just can eliminate in time this product, reduce defectiveness product and carry out the waste that subsequent technique causes.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.All any modifications of doing within the spirit and principles in the present invention, be equal to replacement, improvement etc., be all included in protection scope of the present invention.
Claims (24)
1. a method of testing for power semiconductor modular chips welding technique, is characterized in that: after the chips welding technique of power semiconductor modular completes, carry out following steps:
A, the measured piece after chips welding technique is completed are placed on electric heating device, the two is fitted tightly and fix;
B, simulation actual condition apply different pulse voltage/electric currents to electric heating device; And/or apply loop test voltage/current;
C, employing thermal infrared imager carry out temperature field distribution tests to measured piece;
D, according to the temperature field distribution situation of measured piece, whether have extremely, determine whether defectiveness of chips welding technique.
2. method of testing as claimed in claim 1, is characterized in that: described step D is: judge in the temperature field of measured piece whether have the point higher than mean temperature predetermined number of degrees with respect, determine that this puts corresponding chip position welding procedure and have cavity blemish.
3. method of testing as claimed in claim 2, is characterized in that: described predetermined number of degrees with respect is 1-25 degree Celsius.
4. method of testing as claimed in claim 1, is characterized in that: in advance experimental results is added up, set up temperature field abnormal distribution situation and chips welding defective workmanship and quantifying defects value corresponding relation database;
Described step D is: in described database, search the temperature field distribution situation of described measured piece, if found, define its corresponding chips welding defective workmanship, and provide corresponding quantifying defects value.
5. the method for testing as described in claim 1-4 any one, it is characterized in that: electric current and the voltage of the further Real-Time Monitoring electric heating device of the method, according to current electric current and voltage, adjust pulse voltage/electric current and/or loop test voltage/current that electric heating device is applied.
6. method of testing as claimed in claim 5, is characterized in that: the method further adopts cooling device to carry out radiating and cooling to measured piece, and the temperature of Real-Time Monitoring measured piece, according to current temperature value, adjusts the running parameter of cooling device.
7. a test macro of realizing the method for testing of chips welding technique described in claim 1, is characterized in that: comprise power subsystem, control unit, high-current switch module and driver element, electric heating device, thermal infrared imager and host computer;
Described control unit is connected respectively with host computer with power subsystem, described driver element, and this power subsystem is also connected with high-current switch module, and this driver element is also connected with high-current switch module, and described high-current switch module is also connected with electric heating device; Described host computer is also connected with thermal infrared imager;
Measured piece after chips welding technique completes is placed on electric heating device, and the two fits tightly fixing;
The test parameter of the different operating modes that described control unit sends according to host computer, by controlling power subsystem and driver element, controlling described high-current switch module is that electric heating device applies different pulse voltage/electric currents; And/or apply loop test voltage/current;
The test parameter that described host computer produces different operating modes sends to control unit, and receive the temperature data of the measured piece that thermal infrared imager sends, whether the temperature field distribution character that obtains measured piece, have extremely according to the temperature field distribution situation of measured piece, determines whether defectiveness of chips welding technique.
8. test macro as claimed in claim 7, is characterized in that: this system also comprises the data storage device being connected with host computer;
Described data storage device, pre-stored temperature field abnormal distribution situation and chips welding defective workmanship and quantifying defects value corresponding relation database;
Described host computer is searched the temperature field distribution situation of described measured piece in described database, if found, defines its corresponding chips welding defective workmanship, and provides corresponding quantifying defects value.
9. test as claimed in claim 7 or 8 method, system, it is characterized in that: this system further comprises current sensor and the voltage sensor being connected with electric heating device;
Described current sensor and voltage sensor send to control unit by the electric current of electric heating device and voltage in real time;
Described control unit, further according to current electric current and voltage, is adjusted the pulse voltage that electric heating device is applied.
10. test macro as claimed in claim 9, is characterized in that: this system further comprises the cooling device being arranged under measured piece and the temperature sensor being attached thereto;
Control unit further receives the temperature signal that temperature sensor sends, and according to the temperature of measured piece, to cooling device, sends running parameter, and controlling cooling device is measured piece cooling.
11. test macros as claimed in claim 10, it is characterized in that: described control unit is connected with warning circuit, control unit, when the electric current of electric heating device and/or electric voltage exception, turn-offs electric heating device by driver element, and controls warning circuit and send sound and/or visual alarm.
The method of testing of 12. 1 kinds of power semiconductor modular aluminum wire bonding techniques, is characterized in that: after the aluminum wire bonding technique of power semiconductor modular completes, carry out following steps:
Measured piece after a, simulation actual condition complete aluminum wire bonding technique applies different operating voltage/electric currents; And/or apply loop test voltage/current;
B, employing thermal infrared imager carry out temperature field distribution tests to the aluminum wire bonding point of measured piece;
C, according to the temperature field of the aluminum wire bonding point of measured piece, distribute and whether have extremely, determine whether defectiveness of aluminum wire bonding technique.
13. method of testings as claimed in claim 12, it is characterized in that: described step c is: judge in the aluminum wire bonding point temperature field of measured piece whether have the point higher than mean temperature predetermined number of degrees with respect, determine that this bonding technology of putting corresponding aluminum wire bonding point has crack defect.
14. method of testings as claimed in claim 13, is characterized in that: described predetermined temperature is 1-25 degree Celsius.
15. method of testings as claimed in claim 14, is characterized in that: in advance experimental results is added up, set up temperature field abnormal distribution situation and aluminum wire bonding defective workmanship and the quantifying defects value corresponding relation database of aluminum wire bonding point;
Described step c is: in described database, search the temperature field distribution situation of the aluminum wire bonding point of described measured piece, if found, define its corresponding aluminum wire bonding defective workmanship, and provide quantifying defects value.
16. method of testings as described in claim 12-15 any one, is characterized in that: electric current and the voltage of the further Real-Time Monitoring measured piece of the method, according to current electric current and voltage, adjust the operating current that measured piece is applied.
17. method of testings as claimed in claim 16, is characterized in that: the method further adopts cooling device to carry out radiating and cooling to measured piece, and the temperature of Real-Time Monitoring measured piece, according to current temperature value, adjust the running parameter of cooling device.
18. 1 kinds of test macros of realizing the method for testing of aluminum wire bonding technique described in claim 12, is characterized in that: comprise power subsystem, control unit, high-current switch module and driver element, thermal infrared imager and host computer;
Described control unit is connected respectively with host computer with power subsystem, described driver element, this power subsystem is also connected with high-current switch module, this driver element is also connected with high-current switch module, and the measured piece after described high-current switch module completes with bonding technology by lead-in wire is connected; Described host computer is also connected with thermal infrared imager;
The test parameter of the different operating modes that described control unit sends according to host computer, by controlling power subsystem and driver element, control described high-current switch module measured piece is applied to different operating voltage/electric currents: and/or apply loop test voltage/current;
The test parameter that described host computer produces different operating modes sends to control unit, and receive the temperature data of the aluminum wire bonding point of the measured piece that thermal infrared imager sends, obtain the temperature field distribution character of the aluminum wire bonding point of measured piece, according to the temperature field distribution situation of the aluminum wire bonding point of measured piece, whether have extremely, determine whether defectiveness of aluminum wire bonding technique.
19. test macros as claimed in claim 18, is characterized in that: this system also comprises the data storage device being connected with host computer;
Described data storage device, pre-stored temperature field abnormal distribution situation and aluminum wire bonding defective workmanship and quantifying defects value corresponding relation database;
Described host computer is searched the temperature field distribution situation of the aluminum wire bonding point of described measured piece in described database, if found, defines its corresponding aluminum wire bonding defective workmanship, and provides quantifying defects value.
20. test method, systems as described in claim 18 or 19, is characterized in that: this system further comprises current sensor and the voltage sensor being connected with measured piece;
Described current sensor and voltage sensor send to control unit by the electric current of measured piece and voltage in real time;
Described control unit, further according to current electric current and voltage, is adjusted operating voltage/electric current that measured piece is applied and/or loop test voltage/current.
21. test macros as claimed in claim 20, is characterized in that: this system further comprises the cooling device being arranged under measured piece and the temperature sensor being attached thereto;
Control unit further receives the temperature signal that temperature sensor sends, and according to the temperature of measured piece, to cooling device, sends running parameter, and controlling cooling device is measured piece cooling.
22. test macros as claimed in claim 21, it is characterized in that: described control unit is connected with warning circuit, control unit, when the electric current of measured piece and/or electric voltage exception, turn-offs measured piece by driver element, and controls warning circuit and send sound and/or visual alarm.
The method of testing of 23. 1 kinds of power semiconductor modular packaging technologies, is characterized in that: the testing procedure that executes claims the chips welding technique described in 1 after chips welding technique completes; After completing, aluminum wire bonding technique executes claims the testing procedure of the aluminum wire bonding technique described in 12.
The test macro of 24. 1 kinds of power semiconductor modular packaging technologies, is characterized in that: comprise the test macro described in test macro claimed in claim 7 and claim 18.
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