CN115064455B - Gold wire bonding process method - Google Patents
Gold wire bonding process method Download PDFInfo
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- CN115064455B CN115064455B CN202210795676.9A CN202210795676A CN115064455B CN 115064455 B CN115064455 B CN 115064455B CN 202210795676 A CN202210795676 A CN 202210795676A CN 115064455 B CN115064455 B CN 115064455B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
Abstract
The invention relates to a gold wire bonding process method, because through the programmed process operation, before the product is bonded, test bonding 15 gold wires on a test piece, and the test bonding gold wires are subjected to appearance inspection according to the micro-assembly inspection specification, and destructive tension test is carried out on the test bonding gold wires qualified by appearance self-inspection; the gold wire bonding strength can be produced after being completely qualified; if the bonding strength of more than or equal to 1 gold wire is unqualified, continuously adjusting the bonding process parameters, and repeating the process operation until the strength of the tested bonding gold wire is all qualified; the module or the single plate is placed on a workbench by using coarse tweezers, the focal length and the magnification of a microscope are adjusted, the end head of the bonding cleaver and the bonding point are enabled to appear in the field of view of the microscope at the same time, and the bonding points at two ends are clearly seen. The gold wire bonding process method can obtain optimal bonding strength in a certain range on ultrasonic power, bonding time and process.
Description
Technical Field
The invention relates to a gold wire bonding process method, and relates to a semiconductor chip micro-assembly technology.
Background
The micro-assembly technology has the characteristics of miniaturization, high integration and high reliability, and the microwave component adopting the micro-assembly technology is lighter than a common separating device circuit by 10-20 times, has a small volume by 4-6 times, and has performance and fault-free time which are improved by times. The micro-assembly generally comprises the process flows of cleaning, device chip sintering, gold wire bonding, cap sealing and the like.
Gold wire bonding is a key technology for realizing the electrical interconnection of microwave multi-chip components, and the gold wire bonding directly influences the reliability and stability of a circuit and has great influence on the microwave characteristics of the circuit.
Bonding is a method for forming a connecting joint by applying different energies such as pressure, mechanical vibration, electric energy or heat energy to the joint, and belongs to pressure welding. The metal does not melt in the bonding joint, but atomic diffusion occurs between the joined surfaces, i.e. the distance between the joined surfaces has been reached that creates atomic bonding. Direct mounting of unpackaged semiconductor bare chips on a microwave multi-chip module (MCM) substrate is an important advance in micro-assembly technology. The bonding interconnections in the bare chip are a key technology for assembling the MCM.
Bonding interconnections aluminum or gold wires are bonded or spot welded to the die and substrate at corresponding pad locations using thermocompression, ultrasound, or thermosonic bonding. With the increasing application demand, the application of aluminum wire bonding is less and less, and gold wire bonding has become a key process in the micro-assembly technology. The thermosonic bonding is a change of ultrasonic bonding, namely, a heat input is added, the advantages of hot pressing and ultrasonic are combined, and the thermosonic bonding is suitable for gold wires with the diameter of 18-100 mu m. A25 μm thermosonic bonding method is used herein.
Gold wire bonding can be classified into Ball bonding and Wedge bonding, depending on the bonding tool and the process of handling the wire ends.
When in spherical bonding, the riving knife generates electric spark to melt the extending part of the gold wire outside the riving knife, the molten gold wire forms a sphere under the action of surface tension, the diameter of the sphere is generally 2-3 times of the wire diameter, then the riving knife is lowered, and the gold ball is pressed on the electrode or the chip bonding pad under proper pressure and in a set time to complete the 1 st welding point; and then the riving knife moves to the position of the 2 nd point, the 2 nd welding point is completed in a wedge bonding mode by applying pressure to the gold wire through the outer wall of the riving knife, then the wire is pulled to be broken, the riving knife is lifted to a proper height, the wire is fed to reach the required tail wire length, and the next bonding cycle is started. Ball bonding is an all-round process (i.e., the 2 nd solder joint can be welded at any angle of 360 ° to the 1 st solder joint). The ball bonding generally uses gold wire with diameter less than 75 μm, because it is easy to deform under high temperature and pressure, and has good oxidation resistance and balling property, and is generally used for bonding pad spacing larger than 100 μm.
When the wedge bonding is carried out, the gold wire penetrates through the through hole on the back surface of the chopper, and the gold wire is contacted with the surface of the bonding pad metal through heat, pressure or ultrasonic energy conducted by the chopper to finally form connection. Wedge bonding is a one-way bonding process (i.e., the second bond must be in the same direction as the first bond). The wedge welding can realize the minimum arc, so the wedge welding is widely applied to microwave devices. The quality of wedge bonding is primarily studied herein, so the bonding mode in the following discussion is all wedge bonding, and the processing equipment used is the 7476E bonder from Westbond, usa.
The factors influencing the gold wire bonding quality are many, wherein the ultrasonic power and the bonding time are the factors which most directly contact and most intuitively react the bonding effect in the actual equipment operation. For analysis of gold wire bonding quality, the method is not only limited to measuring bonding tension, but also includes various analysis methods such as influence of solder joint width, solder joint failure analysis, gold wire radian and span, and bonding gold wire microwave characteristics, and a large amount of experiments and actual operation verification are required.
Disclosure of Invention
The invention aims to provide a gold wire bonding process method, so that the optimal bonding strength can be obtained within a certain range on the ultrasonic power, the bonding time and the process.
The invention aims to realize the purpose, and relates to a gold wire bonding process method, which comprises the following steps: gold wire wedge bonding, gold wire ball bonding, gold belt bonding, its characteristic is: the method comprises the following steps:
1) Providing an interface database aiming at equipment of gold wire wedge bonding, gold wire ball bonding and gold belt bonding; storing and establishing parameter databases under different application scenes of gold wire wedge bonding, gold wire spherical bonding and gold ribbon bonding;
2) Selecting equipment suitable for the bonding scene;
3) Selecting gold wire wedge bonding or gold wire spherical bonding or gold belt bonding equipment suitable for the bonding scene;
4) Acquiring a picture of a circuit component needing to be bonded;
5) Finding out pictures of similar circuit components from a database according to the pictures of the bonded circuit components;
6) Comparing the picture of the bonded circuit assembly with the picture of the circuit assembly found to be similar in the database; if the key parameters are the same, calling out the stored parameters of the pictures of the similar circuit components found in the database as the key parameters; if not, searching again or entering the step 1) again;
7) Performing nondestructive tension test and inspection on the bonding to see whether the pressure, temperature or bonding point needs to be adjusted;
8) If not, performing a batch bonding process; turning step 10)
9) Adjusting the necessary pressure, temperature or bonding point, and turning to the step 7);
10 Confirming the bonding parameters, and performing production after the parameters are qualified.
The step 10) of confirming the bonding parameters comprises the following steps:
a. before bonding of a product, bonding of 15 gold wires on a test piece in a test mode;
b. performing appearance inspection on the bonding gold wire according to the micro-assembly inspection specification;
c. carrying out destructive tension test on the bonding gold wire qualified by appearance self-inspection;
d. the gold wire bonding strength can be produced after being completely qualified;
e. if the bonding strength of more than or equal to 1 gold wire is unqualified, continuously adjusting the bonding process parameters, and repeating the steps a) -d) until the strength of the tested bonding gold wire is all qualified.
The gold wire wedge bonding process comprises the following steps of;
the S450-W bonding machine interface is used for storing the parameters after the bonding parameters are confirmed, uploading the stored bonding parameters and obtaining pictures of the bonding circuit assembly; the picture for displaying and acquiring the bonding circuit assembly is used for adjusting the bonding parameters.
The gold wire spherical bonding comprises:
the S450-B bonding machine and the S450-B bonding machine interface are connected, and the S450-BS bonding machine interface is used for storing the parameters after the bonding parameters are confirmed, uploading the stored bonding parameters and obtaining the pictures of the bonding circuit components; the image display device is used for displaying and acquiring the pictures of the bonded circuit components and adjusting the bonding parameters.
The S450-W bonder process comprises the following steps:
(1) Placing the module or the single plate on a workbench by using coarse tweezers, and adjusting the focal length and the magnification of a microscope to enable the end of the bonding chopper and the bonding point to appear in a microscope field of view simultaneously and clearly see the bonding points at two ends;
(2) Moving the operating rod to enable the chopper to align with a first bonding pad, pressing down the operating rod, calling bonding parameters to perform first bonding of the bonding pad, lifting up the operating rod, moving the chopper to a second bonding pad, forming a gold wire arc height, pressing down the operating rod, and calling the bonding parameters to perform second bonding of the bonding pad;
(3) If the two gold wire spherical bonding points are not on the same horizontal plane, the height of the chopper is properly adjusted before the second point bonding is carried out; if the chip and the MIC are interconnected, the first point is bonded on a chip bonding pad except for a special position;
(4) The diameter of the gold wire ball bonding first bonding point is more than 2.0 times and less than 5.0 times of the diameter of the gold wire;
(5) The second bonding point of the gold wire ball bonding cannot fall on the chip aluminum bonding pad, and the tool indentation of the bonding completely covers the width of the lead;
(6) The lead-out wire of the ball bonding should be completely within the circumference of the ball;
(7) The cleaver and devices on the whole machine, module or veneer should be prevented from being damaged in the operation process.
The gold wire ball bonding using an S450-B bonding machine comprises the following steps:
(1) Placing the module or the single plate on a workbench by using coarse tweezers, and adjusting the focal length and the magnification of a microscope to enable the end of the bonding chopper and the bonding point to appear in a microscope field of view simultaneously and clearly see the bonding points at two ends;
(2) Moving the operating rod to enable the riving knife to be aligned to the first bonding pad and automatically call the bonding parameters to perform first bonding pad bonding, lifting the operating rod, moving the riving knife to the second bonding pad, forming gold wire arc height, pressing down the operating rod, and automatically calling the bonding parameters to perform second bonding pad bonding;
(3) If the two points of the gold wire spherical bonding are not on the same horizontal plane, the height of the riving knife is properly adjusted before the second point bonding is carried out; if the chip and the MIC are interconnected, the first point is bonded on a chip bonding pad except for a special position;
(4) The diameter of the gold wire spherical bonding first bonding point is more than 2.0 times of the diameter of the gold wire and less than 5.0 times of the diameter of the gold wire;
(5) The second bonding point of the gold wire ball bonding can not fall on the chip aluminum bonding pad, and the bonding tool indentation completely covers the width of the lead;
(6) The lead-out wire of the ball bonding should be completely within the circumference of the ball;
(7) The cleaver and devices on the whole machine, module or veneer should be prevented from being damaged in the operation process.
The step 1 comprises the following steps:
(1) And (3) confirming bonding parameters:
a. before bonding the product, bonding 15 gold wires on a test piece in a test way;
b. performing appearance inspection on the bonding gold wire according to the micro-assembly inspection specification;
c. performing destructive tension test on the test bonding gold wire with qualified appearance self-inspection;
d. the production can be carried out after the gold wire bonding strength is completely qualified;
e. if the bonding strength of more than or equal to 1 gold wire is unqualified, continuously adjusting the bonding process parameters, and repeating the steps a) -d) until the strength of the tested bonding gold wire is all qualified;
(2) Placing the module or the single plate on a workbench by using coarse tweezers, adjusting the focal length and the magnification of a microscope, enabling the end head of the bonding cleaver and the bonding point to appear in a microscope field of view simultaneously, and clearly seeing the bonding points at two ends;
(3) Moving the operating rod to enable the riving knife to be aligned to the first bonding pad and press down the operating rod to automatically bond, lifting up the operating rod, moving the riving knife to the second bonding pad, simultaneously forming a gold wire arc height, pressing down the operating rod, and automatically pressing the second point to form complete bonding;
(4) When the chip and the MIC are interconnected, the first point is bonded on a chip bonding pad except for a special position;
(5) The width of the bonding point is more than 1.0 time and less than 3.0 times of the diameter of the lead, and the length of the bonding point is more than 0.5 time and less than 3.0 times of the diameter of the lead;
(6) The bonding point should be complete, the tool indentation should completely cover the lead width, and there is an obvious indentation;
(7) The cleaver and devices on the whole machine, module or single plate are prevented from being damaged in the bonding operation process;
(8) And storing the bonding parameters and the pictures into an interface database.
The parameters under different application scenes comprise: the hot table is used for setting temperature, substrate type, power, chopper temperature, chip classification, first point pressure, first point bonding time, second point pressure, second point bonding time and chopper temperature.
The minimum bonding strength is: gold wire diameter 25um, 3.0gf before encapsulation, 2.4 non-destructive bonding tension gf, said minimum bonding strength being: the diameter of the gold band is 125 multiplied by 25um, 15gf before encapsulation and 12 non-destructive bonding tension gf.
The gold band bonding process is the same as the gold wire spherical bonding process.
The invention has the advantages that: because of the programmed process operation, 15 gold wires are bonded on a test piece in a test way before bonding of a product, the appearance of the bonding gold wires is inspected according to the micro-assembly inspection standard, and destructive tension test is carried out on the bonding gold wires qualified by the appearance self-inspection; the gold wire bonding strength can be produced after being completely qualified; if the bonding strength of more than or equal to 1 gold wire is unqualified, continuously adjusting the bonding process parameters, and repeating the process operation until the strength of the tested bonding gold wire is all qualified; placing the module or the single plate on a workbench by using coarse tweezers, adjusting the focal length and the magnification of a microscope, enabling the end head of the bonding cleaver and the bonding point to appear in a microscope field of view simultaneously, and clearly seeing the bonding points at two ends; if the two gold wire spherical bonding points are not on the same horizontal plane, the height of the chopper is properly adjusted before the second point bonding is carried out; if the chip and the MIC are interconnected, the first point is bonded on a chip bonding pad except for a special position; the diameter of the gold wire ball bonding first bonding point is more than 2.0 times and less than 5.0 times of the diameter of the gold wire; the second bonding point of the gold wire ball bonding can not fall on the chip aluminum bonding pad, and the bonding tool indentation completely covers the width of the lead; the optimal bonding strength can be obtained in a certain range on the aspects of ultrasonic power, bonding time and process.
Drawings
The invention is further explained below with reference to the drawings of the embodiments.
FIG. 1 is a process flow diagram of an embodiment of the invention;
FIG. 2 is a flow chart of parameter formation in bonding different application scenarios according to an embodiment of the present invention;
FIG. 3 is a flow chart illustrating process bonding confirmation according to an embodiment of the present invention;
FIG. 4 illustrates an exemplary wedge bond site;
FIG. 5 illustrates an exemplary spherical bond site;
FIG. 6 is a schematic view of a ball bonding wire;
fig. 7 illustrates exemplary gold ribbon bond sites.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, the present invention relates to a gold wire bonding process, which comprises: gold wire wedge bonding, gold wire ball bonding, gold ribbon bonding, characterized by: the method comprises the following steps:
1) Providing an interface database for gold wire wedge bonding equipment; storing and establishing parameter databases under different application scenes of gold wire wedge bonding;
2) Selecting equipment suitable for the bonding scene;
3) Selecting gold wire wedge bonding equipment corresponding to a bonding scene;
4) Acquiring a picture of a circuit component needing to be bonded; as shown in fig. 4, 5, 6, 7;
5) Finding out pictures of the similar circuit assemblies from the database according to the pictures of the bonded circuit assemblies;
6) Comparing the picture of the bonded circuit assembly with the picture of the circuit assembly found to be similar in the database; if the key parameters are the same, calling out the stored parameters of the pictures of the similar circuit components found in the database as the key parameters; if not, searching again or turning to the step 1) again;
7) Performing nondestructive tension test and inspection on the bonding to see whether the pressure, the temperature or the bonding point needs to be adjusted;
8) If not, performing a batch bonding process; turning step 10)
9) Adjusting the necessary pressure, temperature or bonding point, and turning to the step 7);
10 Confirming bonding parameters, and performing production after the parameters are qualified.
As shown in fig. 3, the step 10) of confirming the bonding parameters includes:
a. before bonding of a product, bonding of 15 gold wires on a test piece in a test mode;
b. performing appearance inspection on the bonding gold wire according to the micro-assembly inspection specification;
c. performing destructive tension test on the test bonding gold wire with qualified appearance self-inspection;
d. the gold wire bonding strength can be produced after being completely qualified;
e. if the bonding strength of more than or equal to 1 gold wire is unqualified, continuously adjusting the bonding process parameters, and repeating the steps a) -d) until the strength of the tested bonding gold wire is all qualified.
If the S450-W bonding machine is selected as the equipment suitable for the bonding scene, the S450-W bonding machine comprises an S450-W bonding machine interface, and the S450-W bonding machine interface is used for storing the parameters after the bonding parameter confirmation, uploading the stored bonding parameters and obtaining the pictures of the bonding circuit assembly; the picture for displaying and acquiring the bonding circuit assembly is used for adjusting the bonding parameters.
TABLE 1 reference technological parameter ranges of S450-W type bonding machine
As shown in fig. 3, a flow chart of the bonding setup raw data of the S450-W bonder is given, and the S450-W bonder process includes:
(1) Placing the module or the single plate on a workbench by using coarse tweezers, adjusting the focal length and the magnification of a microscope, enabling the end head of the bonding cleaver and the bonding point to appear in a microscope field of view simultaneously, and clearly seeing the bonding points at two ends;
(2) Moving the operating rod to enable the riving knife to be aligned to the first bonding pad, pressing down the operating rod, calling bonding parameters to perform first bonding pad bonding, lifting up the operating rod, moving the riving knife to the second bonding pad, forming a gold wire arc height, pressing down the operating rod, and calling the bonding parameters to perform second bonding pad bonding;
(3) If the two gold wire spherical bonding points are not on the same horizontal plane, the height of the chopper is properly adjusted before the second point bonding is carried out; if the chip and the MIC are interconnected, the first point is bonded on a chip bonding pad except for a special position;
(4) The diameter of the gold wire spherical bonding first bonding point is more than 2.0 times of the diameter of the gold wire and less than 5.0 times of the diameter of the gold wire;
(5) The second bonding point of the gold wire ball bonding can not fall on the chip aluminum bonding pad, and the bonding tool indentation completely covers the width of the lead;
(6) The lead-out wire of the ball bonding should be completely within the circumference of the ball;
(7) The cleaver and devices on the whole machine, module or veneer should be prevented from being damaged in the operation process.
Example 2
As shown in FIG. 1, the present invention relates to a gold wire bonding process, which comprises: gold wire wedge bonding, gold wire ball bonding, gold ribbon bonding, characterized by: the method comprises the following steps:
1) Providing an interface database aiming at gold wire spherical bonding equipment; storing and establishing parameter databases under different application scenes of gold wire wedge bonding;
2) Selecting equipment suitable for the bonding scene;
3) Selecting gold wire spherical bonding equipment corresponding to the bonding scene;
4) Acquiring a picture of a circuit component needing to be bonded; as in fig. 4, 5, 6, 7;
5) Finding out pictures of similar circuit components from a database according to the pictures of the bonded circuit components;
6) Comparing the picture of the bonded circuit assembly with the picture of the circuit assembly found to be similar in the database; if the key parameters are the same, calling out the stored parameters of the pictures of the similar circuit components found in the database as the key parameters; if not, searching again or turning to the step 1) again;
7) Performing nondestructive tension test and inspection on the bonding to see whether the pressure, the temperature or the bonding point needs to be adjusted;
8) If not, performing a batch bonding process; turning step 10)
9) Adjusting the necessary pressure, temperature or bonding point, and turning to step 7);
10 Confirming the bonding parameters, and performing production after the parameters are qualified.
As shown in fig. 3, the step 10) of confirming the bonding parameters includes:
a. before bonding the product, bonding 15 gold wires on a test piece in a test way;
b. performing appearance inspection on the bonding gold wire according to the micro-assembly inspection specification;
c. carrying out destructive tension test on the bonding gold wire qualified by appearance self-inspection;
d. the production can be carried out after the gold wire bonding strength is completely qualified;
e. if the bonding strength of more than or equal to 1 gold wire is unqualified, continuously adjusting the bonding process parameters, and repeating the steps a) -d) until the strength of the tested bonding gold wire is all qualified.
The gold wire ball bonding device comprises: the S450-B bonding machine and the S450-B bonding machine interface, wherein the S450-BS bonding machine interface is used for storing the parameters after the confirmation of the bonding parameters, uploading the stored bonding parameters and acquiring the pictures of the bonding circuit assembly; the picture for displaying and acquiring the bonding circuit assembly is used for adjusting the bonding parameters.
TABLE 2 reference technological parameter ranges of S450-B type bonding machine
As shown in fig. 2, the same as in example 1 is: step 1 also includes:
(1) And (3) confirming bonding parameters:
(2) Placing the module or the single plate on a workbench by using coarse tweezers, adjusting the focal length and the magnification of a microscope, enabling the end head of the bonding cleaver and the bonding point to appear in a microscope field of view simultaneously, and clearly seeing the bonding points at two ends;
(3) Moving the operating rod to enable the riving knife to be aligned to the first bonding pad and press down the operating rod to automatically bond, lifting up the operating rod, moving the riving knife to the second bonding pad, simultaneously forming a gold wire arc height, pressing down the operating rod, and automatically pressing the second point to form complete bonding;
(4) When the chip and the MIC are interconnected, the first point is bonded on a chip bonding pad except for a special position;
(5) The width of the bonding point is more than 1.0 time and less than 3.0 times of the diameter of the lead, and the length of the bonding point is more than 0.5 times and less than 3.0 times of the diameter of the lead;
(6) The bonding point should be complete, the tool indentation should completely cover the lead width, and there is an obvious indentation;
(7) The cleaver and devices on the whole machine, module or single plate are prevented from being damaged in the bonding operation process;
(8) And storing the bonding parameters and the pictures into an interface database.
As can be seen from tables 1 and 2 in examples 1 and 2: the parameters under different application scenes comprise: the hot table is used for setting temperature, substrate type, power, chopper temperature, chip classification, first point pressure, first point bonding time, second point pressure, second point bonding time and chopper temperature.
In the invention, no matter gold wire wedge bonding, gold wire ball bonding and gold ribbon bonding, the minimum strength value in the parameters is not lower than the minimum bonding strength which is: gold wire diameter 25um, 3.0gf before encapsulation, 2.4 nondestructive bonding tension gf, gold ribbon diameter 125 × 25um, 15gf before encapsulation, 12 nondestructive bonding tension gf.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A gold wire bonding process method comprises the following steps: gold wire wedge bonding, gold wire ball bonding, gold ribbon bonding, characterized by: the method comprises the following steps:
1) Providing an interface database aiming at equipment of gold wire wedge bonding, gold wire ball bonding and gold belt bonding; storing and establishing parameter databases under different application scenes of gold wire wedge bonding, gold wire spherical bonding and gold ribbon bonding;
2) Selecting equipment suitable for the bonding scene;
3) Selecting gold wire wedge bonding or gold wire spherical bonding or gold belt bonding equipment suitable for the bonding scene;
4) Acquiring a picture of a circuit component needing to be bonded;
5) Finding out pictures of similar circuit components from a database according to the pictures of the bonded circuit components;
6) Comparing the picture of the bonded circuit assembly with the picture of the circuit assembly found to be close in the database; if the key parameters are the same, calling out the stored parameters of the pictures of the similar circuit components found in the database as the key parameters; if not, searching again or turning to the step 1) again;
7) Performing nondestructive tension test and inspection on the bonding to see whether the pressure, the temperature or the bonding point needs to be adjusted;
8) If not, performing a batch bonding process; turning step 10)
9) Adjusting the necessary pressure, temperature or bonding point, and turning to step 7);
10 Confirming bonding parameters, and performing production after the parameters are qualified.
2. The process of gold wire bonding as claimed in claim 1, wherein: the step 10) of confirming the bonding parameters comprises:
a. before bonding the product, bonding 15 gold wires on a test piece in a test way;
b. performing appearance inspection on the bonding gold wire according to the micro-assembly inspection specification;
c. carrying out destructive tension test on the bonding gold wire qualified by appearance self-inspection;
d. the gold wire bonding strength can be produced after being completely qualified;
e. if the bonding strength of more than or equal to 1 gold wire is unqualified, continuously adjusting the bonding process parameters, and repeating the steps a) -d) until the strength of the tested bonding gold wire is all qualified.
3. The gold wire bonding process method as claimed in claim 1, wherein: the gold wire wedge bonding process comprises the following steps: the S450-W bonding machine interface is used for storing the parameters after the bonding parameters are confirmed, uploading the stored bonding parameters and obtaining pictures of the bonding circuit assembly; the image display device is used for displaying and acquiring the pictures of the bonded circuit components and adjusting the bonding parameters.
4. The process of gold wire bonding as claimed in claim 1, wherein: the gold wire ball bonding comprises: the S450-B bonding machine and the S450-B bonding machine interface, wherein the S450-BS bonding machine interface is used for storing the parameters after the confirmation of the bonding parameters, uploading the stored bonding parameters and acquiring the pictures of the bonding circuit assembly; the picture for displaying and acquiring the bonding circuit assembly is used for adjusting the bonding parameters.
5. The gold wire bonding process as claimed in claim 4, wherein:
the S450-W bonder process comprises the following steps:
(1) Placing the module or the single plate on a workbench by using coarse tweezers, and adjusting the focal length and the magnification of a microscope to enable the end of the bonding chopper and the bonding point to appear in a microscope field of view simultaneously and clearly see the bonding points at two ends;
(2) Moving the operating rod to enable the chopper to align with a first bonding pad, pressing down the operating rod, calling bonding parameters to perform first bonding of the bonding pad, lifting up the operating rod, moving the chopper to a second bonding pad, forming a gold wire arc height, pressing down the operating rod, and calling the bonding parameters to perform second bonding of the bonding pad;
(3) If the two points of the gold wire spherical bonding are not on the same horizontal plane, the height of the riving knife is properly adjusted before the second point bonding is carried out; if the chip and the MIC (ceramic switch over substrate) are interconnected, the first point is bonded on a chip bonding pad except for special positions;
(4) The diameter of the gold wire ball bonding first bonding point is more than 2.0 times and less than 5.0 times of the diameter of the gold wire;
(5) The second bonding point of the gold wire ball bonding cannot fall on the chip aluminum bonding pad, and the tool indentation of the bonding completely covers the width of the lead;
(6) The lead-out wire of the ball bonding should be completely within the circumference of the ball;
(7) The cleaver and devices on the whole machine, module or veneer should be prevented from being damaged in the operation process.
6. The process of gold wire bonding as claimed in claim 4, wherein: the gold wire ball bonding using an S450-B bonding machine comprises the following steps:
(1) Placing the module or the single plate on a workbench by using coarse tweezers, and adjusting the focal length and the magnification of a microscope to enable the end of the bonding chopper and the bonding point to appear in a microscope field of view simultaneously and clearly see the bonding points at two ends;
(2) Moving the operating rod to enable the riving knife to be aligned to the first bonding pad and automatically call the bonding parameters to perform first bonding pad bonding, lifting the operating rod, moving the riving knife to the second bonding pad, forming gold wire arc height, pressing down the operating rod, and automatically calling the bonding parameters to perform second bonding pad bonding;
(3) If the two points of the gold wire spherical bonding are not on the same horizontal plane, the height of the riving knife is properly adjusted before the second point bonding is carried out; if the chip and the MIC (ceramic interposer substrate) are interconnected, the first point is bonded on a chip bonding pad except for a special position;
(4) The diameter of the gold wire spherical bonding first bonding point is more than 2.0 times of the diameter of the gold wire and less than 5.0 times of the diameter of the gold wire;
(5) The second bonding point of the gold wire ball bonding can not fall on the chip aluminum bonding pad, and the bonding tool indentation completely covers the width of the lead;
(6) The lead-out wire of the ball bonding should be completely within the circumference of the ball;
(7) The cleaver and devices on the whole machine, module or veneer should be prevented from being damaged in the operation process.
7. The process of gold wire bonding as claimed in claim 1, wherein: the step 1 comprises the following steps:
(1) And (3) confirming bonding parameters:
(2) Placing the module or the single plate on a workbench by using coarse tweezers, adjusting the focal length and the magnification of a microscope, enabling the end head of the bonding cleaver and the bonding point to appear in a microscope field of view simultaneously, and clearly seeing the bonding points at two ends;
(3) Moving the operating rod to enable the riving knife to be aligned to the first bonding pad and press down the operating rod to automatically bond, lifting up the operating rod, moving the riving knife to the second bonding pad, simultaneously forming a gold wire arc height, pressing down the operating rod, and automatically pressing the second point to form complete bonding;
(4) When the chip and the MIC (ceramic switching substrate) are interconnected, the first point is bonded on a chip bonding pad except for special positions;
(5) The width of the bonding point is more than 1.0 time and less than 3.0 times of the diameter of the lead, and the length of the bonding point is more than 0.5 times and less than 3.0 times of the diameter of the lead;
(6) The bonding point should be complete, the tool indentation should completely cover the lead width, and there is an obvious indentation;
(7) The damage to the cleaver and the devices on the whole machine, module or single board is avoided in the bonding operation process;
(8) And storing the bonding parameters and the pictures into an interface database.
8. The process of gold wire bonding as claimed in claim 1, wherein: the parameters under different application scenes comprise: the hot table is used for setting temperature, substrate type, power, chopper temperature, chip classification, first point pressure, first point bonding time, second point pressure, second point bonding time and chopper temperature.
9. The gold wire bonding process as claimed in claim 1, wherein:
the strength of the bond is at a minimum: the diameter of the gold wire was 25um, the strength before encapsulation was 3.0gf, the nondestructive bonding tension was 2.4gf, the diameter of the gold tape was 125 × 25um, the strength before encapsulation was 15gf, and the nondestructive bonding tension was 12gf.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6564115B1 (en) * | 2000-02-01 | 2003-05-13 | Texas Instruments Incorporated | Combined system, method and apparatus for wire bonding and testing |
| CN1435871A (en) * | 2002-02-01 | 2003-08-13 | Esec贸易公司 | Method for determining optimal bonding parameter during bonding using lead bonding device |
| CN103579032A (en) * | 2012-07-20 | 2014-02-12 | 中国科学院电工研究所 | Method and system for testing power semiconductor module packaging technology |
| CN109900634A (en) * | 2019-02-26 | 2019-06-18 | 四川立泰电子有限公司 | A kind of lead key closing process monitoring reliability method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI229397B (en) * | 2002-10-16 | 2005-03-11 | Esec Trading Sa | Method for determining optimum bond parameters when bonding with a wire bonder |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6564115B1 (en) * | 2000-02-01 | 2003-05-13 | Texas Instruments Incorporated | Combined system, method and apparatus for wire bonding and testing |
| CN1435871A (en) * | 2002-02-01 | 2003-08-13 | Esec贸易公司 | Method for determining optimal bonding parameter during bonding using lead bonding device |
| CN103579032A (en) * | 2012-07-20 | 2014-02-12 | 中国科学院电工研究所 | Method and system for testing power semiconductor module packaging technology |
| CN109900634A (en) * | 2019-02-26 | 2019-06-18 | 四川立泰电子有限公司 | A kind of lead key closing process monitoring reliability method |
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