CN103558799A - Breakdown protective circuit of insulated gate bipolar transistor module - Google Patents
Breakdown protective circuit of insulated gate bipolar transistor module Download PDFInfo
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- CN103558799A CN103558799A CN201310537659.6A CN201310537659A CN103558799A CN 103558799 A CN103558799 A CN 103558799A CN 201310537659 A CN201310537659 A CN 201310537659A CN 103558799 A CN103558799 A CN 103558799A
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- bipolar transistor
- insulated gate
- gate bipolar
- breakdown
- igbt
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Abstract
The invention discloses a breakdown protective circuit of an insulated gate bipolar transistor module, and relates to transistor protective circuits. The breakdown protective circuit comprises a control center, an insulated gate bipolar transistor breakdown detection circuit, an insulated gate bipolar transistor and an insulated gate bipolar transistor drive module. The input end of the insulated gate bipolar transistor breakdown detection circuit is connected with the C electrode of the IGBT and the input drive end of the IGBT, the insulated gate bipolar transistor breakdown detection circuit is connected with a drive output power source of the insulated gate bipolar transistor drive module, the breakdown signal output end of the insulated gate bipolar transistor breakdown detection circuit is connected with the control center, the control PWM signal output end of the control center is connected with the input end of the insulated gate bipolar transistor drive module, and the insulated gate bipolar transistor drive module is connected with the E electrode of the IGBT. Once the IGBT is broken down, after detecting the breakdown of the IGBT, the insulated gate bipolar transistor breakdown detection circuit sends a breakdown electrical signal to the control center, the breakdown electrical signal is processed through the control center, and the chain damage is avoided.
Description
Technical field
The present invention relates to Prective circuit for transistor, especially relate to a kind of IGBT module breakdown protection circuit.
Background technology
At present; in electron electric power technology and power electronic technology; insulated gate bipolar transistor (IGBT) is as main flow device; IGBT safe operation obtains very high attention; take many modes to guarantee to the full extent IGBT safe operation, as add snubber circuit, IGBT switching speed is processed; reduce loop stray inductance, it is all preventive measure that IGBT is carried out to current-limiting protection etc.But seldom there is a kind of IGBT to puncture Hou， control center, can know in time, further avoid bringing chain reaction to damage other electron devices or equipment because IGBT damages, this control circuit is sort this problem out effectively, and the simple and reliable property of control circuit is high simultaneously.
Chinese patent CN101872967A discloses a kind of IGBT breakdown protection circuit; comprise impedance Z 1, Z2, Z3 and diode D1; one end of described impedance Z 1 connects power supply VCC; the other end is connected with the positive pole of diode D1 with one end of impedance Z 2; the negative pole of described diode D1 is connected with the collector C of IGBT; the other end of described impedance Z 2 is connected and exports the guard signal of IGBT simultaneously with one end of impedance Z 3, and the other end of described impedance Z 3 is connected with the drive electrode G of IGBT.In the situation that IGBT is breakdown, can make IGBT circuit in guard mode.
Summary of the invention
The object of the present invention is to provide a kind of improved IGBT module breakdown protection circuit.
The present invention is provided with control center, insulated gate bipolar transistor punctures testing circuit, insulated gate bipolar transistor and insulated gate bipolar transistor driver module; Insulated gate bipolar transistor punctures the input end of testing circuit and is connected with the C utmost point of insulated gate bipolar transistor and input drive end, insulated gate bipolar transistor punctures testing circuit and is connected with insulated gate bipolar transistor driver module driver output power supply, the breakdown signal output terminal that insulated gate bipolar transistor punctures testing circuit is connected with control center, the input end of the control pwm signal output termination insulated gate bipolar transistor driver module of control center, insulated gate bipolar transistor driver module is connected with the E utmost point of insulated gate bipolar transistor.
Once insulated gate bipolar transistor punctures, after insulated gate bipolar transistor punctures testing circuit and detects, breakdown potential signal is delivered to ，Jing control center of control center and process, avoid bringing chain damage.
Compare with existing IGBT module breakdown protection circuit, the present invention has following outstanding advantages:
Under IGBT punctures situation, control center of the present invention can find in time and effectively process, and avoids bringing chain damage, can pass through control center again simultaneously, finds very soon trouble spot, keeps in repair and failure reason analysis.
Accompanying drawing explanation
Fig. 1 is the composition frame chart of the embodiment of the present invention.
Fig. 2 is the electric circuit constitute schematic diagram of the embodiment of the present invention.
Embodiment
Referring to Fig. 1, the embodiment of the present invention is provided with control center 1, insulated gate bipolar transistor punctures testing circuit 2, insulated gate bipolar transistor 3 and insulated gate bipolar transistor driver module 4, insulated gate bipolar transistor punctures the input end of testing circuit 2 and is connected with the C utmost point of insulated gate bipolar transistor 3 and input drive end, insulated gate bipolar transistor punctures testing circuit 2 and is connected with insulated gate bipolar transistor driver module 4 driver output power supplys, the breakdown signal output terminal that insulated gate bipolar transistor punctures testing circuit 2 is connected with control center 1, the input end of the control pwm signal output termination insulated gate bipolar transistor driver module 4 of control center 1, insulated gate bipolar transistor driver module 4 is connected with the E utmost point of insulated gate bipolar transistor 3.
Once insulated gate bipolar transistor 3 punctures, after insulated gate bipolar transistor punctures testing circuit 2 and detects, breakdown potential signal is delivered to 1 ，Jing control center 1 of control center and process, avoid bringing chain damage.
Referring to Fig. 2, the embodiment of the present invention is by resistance R 1, R2, R3, R4, R5, capacitor C 3, C4, diode D1, D2, D3, optocoupler U2 and triode Q2 form, D3 negative pole is connected on the collector C of IGBT, when IBGT normal operation, when IGBT drives as low level, not conducting of Q2, ratio+VCC is high for C utmost point level, not conducting of optocoupler; When IGBT drives as high level, Q2 conducting, drags down the level of U2 the 1st pin, not conducting of optocoupler.When IGBT punctures, when IGBT drives as low level, not conducting of Q2, but C utmost point level ratio+VCC is low, optocoupler conducting, and an electric signal of light-coupled isolation transmission goes to control center.
Described diode D2 and D3 can adopt high-voltage high-speed recovery diode or supper-fast recovery diode.
Claims (1)
1. IGBT module breakdown protection circuit, is characterized in that being provided with control center, insulated gate bipolar transistor punctures testing circuit, insulated gate bipolar transistor and insulated gate bipolar transistor driver module; Insulated gate bipolar transistor punctures the input end of testing circuit and is connected with the C utmost point of insulated gate bipolar transistor and input drive end, insulated gate bipolar transistor punctures testing circuit and is connected with insulated gate bipolar transistor driver module driver output power supply, the breakdown signal output terminal that insulated gate bipolar transistor punctures testing circuit is connected with control center, the input end of the control pwm signal output termination insulated gate bipolar transistor driver module of control center, insulated gate bipolar transistor driver module is connected with the E utmost point of insulated gate bipolar transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310537659.6A CN103558799B (en) | 2013-11-04 | 2013-11-04 | IGBT module breakdown protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310537659.6A CN103558799B (en) | 2013-11-04 | 2013-11-04 | IGBT module breakdown protection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103558799A true CN103558799A (en) | 2014-02-05 |
| CN103558799B CN103558799B (en) | 2017-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310537659.6A Active CN103558799B (en) | 2013-11-04 | 2013-11-04 | IGBT module breakdown protection circuit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872967A (en) * | 2009-04-24 | 2010-10-27 | 深圳市科陆变频器有限公司 | IGBT (Insulated Gate Bipolar Transistor) breakdown protection circuit |
| JP2010288416A (en) * | 2009-06-15 | 2010-12-24 | Fuji Electric Systems Co Ltd | Overcurrent protection circuit of igbt having reverse breakdown voltage |
| CN102347603A (en) * | 2011-09-21 | 2012-02-08 | 深圳市英威腾电气股份有限公司 | Drive and protection circuit for IGBT (Insulated Gate Bipolar Transistor) |
| CN102801142A (en) * | 2012-08-29 | 2012-11-28 | 深圳市英威腾电气股份有限公司 | Insulated gate bipolar transistor-driven protective circuit |
| CN202586313U (en) * | 2012-04-01 | 2012-12-05 | Tcl空调器(中山)有限公司 | Overcurrent protection circuit for insulated gate bipolar transistor and inductive load control circuit |
| CN203561861U (en) * | 2013-11-04 | 2014-04-23 | 厦门普罗太克科技有限公司 | Breakdown protective circuit of insulated gate bipolar transistor module |
-
2013
- 2013-11-04 CN CN201310537659.6A patent/CN103558799B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872967A (en) * | 2009-04-24 | 2010-10-27 | 深圳市科陆变频器有限公司 | IGBT (Insulated Gate Bipolar Transistor) breakdown protection circuit |
| JP2010288416A (en) * | 2009-06-15 | 2010-12-24 | Fuji Electric Systems Co Ltd | Overcurrent protection circuit of igbt having reverse breakdown voltage |
| CN102347603A (en) * | 2011-09-21 | 2012-02-08 | 深圳市英威腾电气股份有限公司 | Drive and protection circuit for IGBT (Insulated Gate Bipolar Transistor) |
| CN202586313U (en) * | 2012-04-01 | 2012-12-05 | Tcl空调器(中山)有限公司 | Overcurrent protection circuit for insulated gate bipolar transistor and inductive load control circuit |
| CN102801142A (en) * | 2012-08-29 | 2012-11-28 | 深圳市英威腾电气股份有限公司 | Insulated gate bipolar transistor-driven protective circuit |
| CN203561861U (en) * | 2013-11-04 | 2014-04-23 | 厦门普罗太克科技有限公司 | Breakdown protective circuit of insulated gate bipolar transistor module |
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| CN103558799B (en) | 2017-01-04 |
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Address after: Xinyang Industrial Zone Xinle Road, Haicang District of Xiamen city of Fujian Province, No. 26 361022 Applicant after: AVIC Tech (Xiamen) electronic technology Limited by Share Ltd Address before: Xinyang Industrial Zone Xinle Road, Haicang District of Xiamen city of Fujian Province, No. 26 361022 Applicant before: Xiamen Protek Technology Co., Ltd. |
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