CN113765070B - IGBT short-circuit protection circuit and method based on inductance current change rate - Google Patents
IGBT short-circuit protection circuit and method based on inductance current change rate Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
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Abstract
The invention discloses an IGBT short-circuit protection circuit based on inductance current change rate, a protection method and an IGBT circuit, wherein the protection circuit comprises a detection unit, a detection unit and a control unit, wherein the detection unit is used for detecting the current change rate of an internal packaging inductance or a stray inductance of the IGBT; the input end of the fault signal generating unit is connected with the output end of the detecting unit and is used for outputting a fault signal when the current change rate exceeds a set threshold value; the input end of the fault signal holding unit is connected with the output end of the fault signal generating unit and is used for holding the fault signal; and the input end of the turn-off signal generating unit is connected with the output end of the fault maintaining unit, and the output end of the turn-off signal generating unit is directly connected with the grid electrode of the IGBT and is used for generating a turn-off signal to the grid electrode of the IGBT when the fault signal is received. The invention has the advantages of simple circuit structure, rapid detection, rapid turn-off response, high reliability and the like.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to an IGBT short-circuit protection circuit based on an inductance current change rate, an IGBT circuit and a protection method.
Background
The IGBT short-circuit protection is accompanied with the application and development of IGBTs, and the IGBTs need to be turned off rapidly and reliably under the short-circuit fault condition to prevent more serious faults. When bridge arm short circuit occurs in the power electronic circuit, the whole short circuit is in a low-inductance state, short circuit current rises rapidly, the limit current capacity of the IGBT is reached or even exceeded in a period of a few us, meanwhile, the IGBT is very rapidly desaturated, and the IGBT is very easy to fail under high-voltage and high-current. Aiming at the problem and key of the design of IGBT bridge arm through short-circuit protection under a low-inductance loop. Most of the existing IGBT protection functions detect the occurrence of desaturation of an IGBT through an analog circuit to perform overcurrent protection or detect the current change rate on an IGBT packaging inductor to integrate, judge whether the IGBT is short-circuited through comparison of a comparator and a set value, and then turn off the IGBT through a power driving amplifying stage. The whole protection link has certain filtering and driving turn-off time delay, and for bridge arm short circuit, IGBT failure caused by fast turn-off of IGBT can not be realized; in addition, the existing IGBT short-circuit protection loop is complex, the circuit delay and the short-circuit signal filtering cause great delay in protection, and the bridge arm direct current cannot achieve rapid and reliable protection.
The solutions proposed for IGBT overcurrent and short-circuit protection are currently mostly divided into the following:
firstly, detecting the tube voltage drop (collector and emitter voltages Vce) of an IGBT through a diode, judging that overcurrent or short circuit occurs when the tube voltage drop exceeds a set voltage value, and further executing driving protection, wherein the circuit is relatively simple, but because the IGBT has an opening process from blocking to conducting, an inherent opening time is required to pass, a certain blanking time (fault signal filtering) is required for protection to prevent misoperation of a protection function, and the protection response speed is low, so that reliable protection of the IGBT under extreme working conditions cannot be realized;
secondly, the conduction voltage drop Vce of the collector and the emitter of the IGBT is detected through the resistance capacitance, and the method is similar to the first method, and has the advantages that a certain blanking time is needed for a protection function, the protection response is slow, and the protection function is imperfect;
thirdly, as described in the patent application "method for protecting short circuit of a medium-high voltage IGBT module based on instantaneous power loss", the conducting current Ic and the pipe voltage drop Vce of an IGBT device are required to be collected and pass through a multiplier, and the conducting current and the pipe voltage drop are not high in accuracy and are easy to be interfered due to high dv/dt, d i/dt and strong electromagnetic environment, meanwhile, the circuit is complex, the reliability is greatly reduced, and the fault risk is increased;
fourth, through detecting the current change rate d i/dt of the module inner packaging inductance when IGBT overflows or is in short circuit, then through integrating and comparing with threshold value of the preset value, judge whether the device has overcurrent and short circuit, and then implement the drive protection, the circuit of this method is complex, need to carry on the fault protection through the logic processing, the time delay is longer, can't realize the IGBT short circuit protection under the special short circuit operating mode.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the technical problems existing in the prior art, the invention provides an IGBT short-circuit protection circuit, an IGBT circuit and a method based on the inductance current change rate, which are rapid in detection and quick in turn-off response.
In order to solve the technical problems, the invention adopts the following technical scheme:
an IGBT short-circuit protection circuit based on inductance current change rate comprises
The detection unit is used for detecting the current change rate of the internal packaging inductance or the stray inductance of the IGBT;
the input end of the fault signal generating unit is connected with the output end of the detecting unit and is used for outputting a fault signal when the current change rate exceeds a set threshold value;
the input end of the fault signal holding unit is connected with the output end of the fault signal generating unit and is used for holding the fault signal;
and the input end of the turn-off signal generating unit is connected with the output end of the fault maintaining unit, and the output end of the turn-off signal generating unit is directly connected with the grid electrode of the IGBT and is used for generating a turn-off signal to the grid electrode of the IGBT when the fault signal is received.
As a further improvement of the above technical scheme:
and the output end of the fault signal holding unit is connected with the input end of the IGBT driving unit and is used for sending the fault signal to the IGBT driving unit to block the IGBT driving signal and turn off the IGBT.
The detection unit comprises resistors R5-R7, a voltage stabilizing diode D2, a diode D3 and a diode D4; one end of a resistor R6 is connected to an auxiliary terminal E of the IGBT, the other end of the resistor R6 is connected to a cathode of a zener diode D2, an anode of the zener diode D2 is connected to one input end of a fault signal generating unit, the other input end of the fault signal generating unit is sequentially connected with an anode of a diode D4 after being connected with R5 and R7 in series, and the cathode of the diode D4 is connected with a main terminal E of the IGBT; the cathode of diode D3 is connected to the common terminal of R5 and R7 and the anode of D3 is connected to a negative power supply.
The fault signal generating unit is an optical coupling isolation unit.
The optocoupler isolation unit comprises a photoelectric coupler U2, the anode of a light emitting diode in the photoelectric coupler U2 is connected with the anode of a diode D2, and the cathode of the light emitting diode is connected with a resistor R5.
The fault holding unit comprises a resistor R4 and a capacitor C1, wherein one end of the resistor R4 is connected with one end of the capacitor C1 and is connected to the output end of the photoelectric coupler U2, the other end of the resistor R4 is connected to a power supply Vcc, and the other end of the capacitor C1 is connected to a negative power supply.
The turn-off signal generating unit comprises a switching device V1, a driver U1, resistors R1-R3 and a diode D1, wherein the input end of the driver U1 is connected with the output end of a photoelectric coupler U2, the output end of the driver U1 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with one end of the resistor R2 and the grid electrode of the switching device V1, the other end of the resistor R2 is connected to the drain electrode of the switching device V1 and is connected to a negative power supply, the source electrode of the switching device V1 is connected with one end of the resistor R1, the other end of the resistor R1 is connected with the cathode of the diode D1, and the anode of the diode D1 is directly connected with the grid electrode of the IGBT.
The switching device is a mosfet.
The invention also discloses an IGBT circuit, which comprises an IGBT and an IGBT driving unit, wherein the IGBT driving unit is connected with the grid electrode of the IGBT; the IGBT short-circuit protection circuit based on the inductance current change rate is further included.
The invention further discloses a protection method of the IGBT short-circuit protection circuit based on the inductance current change rate, which comprises the following steps:
1) The detection unit detects the current change rate of the internal packaging inductance or the stray inductance of the IGBT in real time;
2) The fault signal generating unit outputs a fault signal when the current change rate exceeds a set threshold;
3) The fault signal holding unit holds the fault signal to send to the shutdown signal generating unit;
4) The turn-off signal generating unit generates a turn-off signal to the gate of the GBT to turn off the IGBT when receiving the fault signal.
As a further improvement of the above technical scheme:
in step 3), a fault signal is sent to the turn-off signal generating unit and a fault signal is also sent to the IGBT driving unit to block the driving signal and turn off the IGBT.
Compared with the prior art, the invention has the advantages that:
the invention is suitable for the rapid protection under the bridge arm through working condition of the high-power IGBT module, is used for detecting the current change rate (short-circuit voltage value) induced on the IGBT internal packaging inductor or the stray inductor through the detection unit when the power electronic circuit has the IGBT bridge arm through short-circuit fault, and triggering the fault signal generation unit to generate a fault signal when the current change rate (short-circuit voltage value) exceeds a set value, wherein the fault signal is maintained through the fault signal maintenance unit and is output to the turn-off signal generation unit to generate a turn-off signal to directly turn off the IGBT; in the scheme, whether the IGBT is short-circuited or not is judged by detecting the current change rate induced on the packaging inductance or the stray inductance in the IGBT through the detection unit, and the detection is rapid; the turn-off signal directly acts on the grid electrode of the IGBT, does not pass through a complex logic circuit and an IGBT driving unit, and has short delay time and quick response; the whole scheme is simple in principle, simple in circuit structure, high in reliability and quick in response, and can solve the problems of time delay and complexity of the traditional IGBT short-circuit protection scheme as the improvement and supplement of the traditional IGBT short-circuit protection function, and the quick fault triggering and protection after the IGBT bridge arm is short-circuited are realized.
According to the invention, the fault signal is fed back to the IGBT driving unit while the fault signal is output to the turn-off signal generating unit, so that the blocking of the driving signal is performed, the IGBT is turned off, and the reliability of turn-off is further improved.
The invention realizes the electrical isolation of the detection unit, the protection circuit and the fault feedback signal through the photoelectric isolation unit (photoelectric coupler), can realize the short-circuit protection of the power electronic devices of the upper and lower tubes of the same bridge arm and the power electronic devices among different bridge arms, and has strong trafficability and wide application.
Drawings
Fig. 1 is a block diagram of a protection circuit according to the present invention in a specific application.
Fig. 2 is a schematic circuit diagram of the protection circuit of the present invention in a specific application.
Detailed Description
The invention is further described below with reference to the drawings and specific examples.
As shown in fig. 1, the IGBT short-circuit protection circuit of the present embodiment based on the inductance current change rate includes
The detection unit is used for detecting the current change rate of the package inductance (or stray inductance) in the IGBT so as to obtain a short circuit voltage value DeltaU=Lsigma di/dt on the package inductance;
the input end of the fault signal generating unit is connected with the output end of the detecting unit and is used for outputting a fault signal when the current change rate (or the short-circuit voltage value) exceeds a set threshold value;
the input end of the fault signal holding unit is connected with the output end of the fault signal generating unit and is used for holding the fault signal;
and the input end of the turn-off signal generating unit is connected with the output end of the fault maintaining unit, and the output end of the turn-off signal generating unit is directly connected with the grid electrode of the IGBT and is used for generating a turn-off signal to the grid electrode of the IGBT when the fault signal is received.
The invention is suitable for the rapid protection under the bridge arm through working condition of the high-power IGBT module, is used for detecting the current change rate (short-circuit voltage value) induced on the IGBT internal packaging inductor (or stray inductor) through the detection unit when the power electronic circuit has the IGBT bridge arm through short-circuit fault, and triggering the fault signal generation unit to generate a fault signal when the current change rate (short-circuit voltage value) exceeds a set value, wherein the fault signal is maintained through the fault signal maintenance unit and is output to the turn-off signal generation unit to generate a turn-off signal to directly turn off the IGBT; in the scheme, whether the IGBT is short-circuited or not is judged by detecting the current change rate induced on the packaging inductance or the stray inductance in the IGBT through the detection unit, and the detection is rapid; the turn-off signal directly acts on the grid electrode of the IGBT, does not pass through a complex logic circuit and an IGBT driving unit, and has short delay time and quick response; the whole scheme is simple in principle, high in reliability and quick in response, can be used as the perfection and supplement of the existing IGBT short-circuit protection function, can solve the problems of time delay and complexity of the existing IGBT short-circuit protection scheme, and realizes quick fault triggering and protection after the IGBT bridge arm is short-circuited.
Further, the output end of the fault signal holding unit is connected with the input end of the IGBT driving unit and is used for sending the fault signal to the IGBT driving unit to block the IGBT driving signal and turn off the IGBT, so that the reliability of the turn-off of the IGBT is further improved.
As shown in fig. 2, in the present embodiment, the detection unit includes resistors R5 to R7, a zener diode D2, a diode D3, and a diode D4; one end of a resistor R6 is connected to an auxiliary terminal E (the auxiliary terminal E is connected with a 0 level GND) of the IGBT, the other end of the resistor R6 is connected to a cathode of a voltage stabilizing diode D2, an anode of the voltage stabilizing diode D2 is connected to one input end of a fault signal generating unit, the other input end of the fault signal generating unit is connected with an anode of a diode D4 after being connected with R5 and R7 in series in sequence, and the cathode of the diode D4 is connected with a main terminal E of the IGBT; the cathode of diode D3 is connected to the common terminal of R5 and R7, and the anode of D3 is connected to a negative power source (e.g., -15V); the package inductance Lsigma is arranged between the auxiliary terminal E and the main terminal E; the detection unit circuit is simple in structure and easy to realize.
As shown in fig. 2, in this embodiment, the fault signal generating unit is an optocoupler isolation unit; the optocoupler isolation unit comprises a photoelectric coupler U2, wherein the anode of a light emitting diode in the photoelectric coupler U2 is connected with the anode of a diode D2, and the cathode of the light emitting diode is connected with a resistor R5. The optical coupler isolation unit is used for realizing level conversion and electrical isolation, so that the optical coupler is high in universality and wide in application range. Where U2 is powered by Vcc and-15V (the supply voltage is related to the U2 parameter, where Vcc is-10V and the supply voltage is +5V).
As shown in fig. 2, in the present embodiment, the fault holding unit includes a resistor R4 and a capacitor C1, wherein one end of the resistor R4 is connected to one end of the capacitor C1 and is connected to the output end of the photo coupler U2, the other end of the resistor R4 is connected to the power supply Vcc, and the other end of the capacitor C1 is connected to a negative power supply (e.g., -15V); the common terminal of the resistor R4 and the capacitor C1 is further connected to the fault input terminal a of the IGBT driving unit to provide a fault signal to the IGBT driving unit. The circuit structure of the fault holding unit is simple and easy to realize.
As shown in fig. 2, in this embodiment, the off signal generating unit (power amplification performing unit in fig. 1) includes a mosfet device V1, a driver U1, resistors R1 to R3, and a diode D1, wherein the driver U1 is powered by GND and-15V (the power supply voltage is +15v), an input terminal INA thereof is connected to an output terminal of a photocoupler U2, an output terminal of the driver U1 is connected to one end of a resistor R3, the other end of the resistor R3 is connected to one end of the resistor R2 and a gate of the mosfet device V1, the other end of the resistor R2 is connected to a drain of the mosfet device V1 and to a negative power supply, a source of the mosfet device V1 is connected to one end of the resistor R1, the other end of the resistor R1 is connected to a cathode of the diode D1, and an anode of the diode D1 is directly connected to the gate of the IGBT. The circuit structure of the turn-off signal generating unit is simple and easy to realize.
The integral protection circuit has a simple structure and is easy to realize.
The invention further discloses a protection method of the IGBT short-circuit protection circuit based on the inductance current change rate, which comprises the following steps:
1) The detection unit detects the current change rate di/dt of the IGBT internal packaging inductor (or stray inductor) in real time, and a short-circuit voltage value DeltaU=Lsigma di/dt is obtained;
2) The fault signal generating unit outputs a fault signal when the current change rate (i.e., the short-circuit voltage value) exceeds a set threshold value;
3) The fault signal holding unit holds the fault signal and sends the fault signal to the turn-off signal generating unit;
4) The turn-off signal generating unit generates a turn-off signal to the gate of the IGBT to turn off the IGBT when receiving the fault signal.
In this embodiment, in step 3), the fault signal is sent to the turn-off signal generating unit, and at the same time, the fault signal is also sent to the IGBT driving unit, so as to block the driving signal and turn off the IGBT, thereby further improving the reliability of turn-off.
As shown in fig. 1 and 2, the invention also discloses an IGBT circuit, which comprises an IGBT, an IGBT driving unit, and the IGBT short-circuit protection circuit based on the inductance current change rate as described above, wherein the IGBT driving unit is connected with the gate of the IGBT. The IGBT circuit of the invention comprises a protection circuit as described above, also having the advantages as described for the protection circuit.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the invention without departing from the principles thereof are intended to be within the scope of the invention as set forth in the following claims.
Claims (7)
1. An IGBT short-circuit protection circuit based on inductance current change rate is characterized by comprising
The detection unit is used for detecting the current change rate of the internal packaging inductance or the stray inductance of the IGBT;
the input end of the fault signal generating unit is connected with the output end of the detecting unit and is used for outputting a fault signal when the current change rate exceeds a set threshold value;
the input end of the fault signal holding unit is connected with the output end of the fault signal generating unit and is used for holding the fault signal;
the input end of the turn-off signal generating unit is connected with the output end of the fault signal holding unit, and the output end of the turn-off signal generating unit is directly connected with the grid electrode of the IGBT and is used for generating a turn-off signal to the grid electrode of the IGBT when the fault signal is received;
the detection unit comprises resistors R5-R7, a voltage stabilizing diode D2, a diode D3 and a diode D4; one end of a resistor R6 is connected to an auxiliary terminal E of the IGBT, the other end of the resistor R6 is connected to a cathode of a zener diode D2, an anode of the zener diode D2 is connected to one input end of a fault signal generating unit, the other input end of the fault signal generating unit is sequentially connected with an anode of a diode D4 after being connected with R5 and R7 in series, and the cathode of the diode D4 is connected with a main terminal E of the IGBT; the cathode of the diode D3 is connected to the common terminal of R5 and R7, and the anode of the diode D3 is connected to a negative power supply;
the fault signal generating unit is an optical coupling isolation unit;
the optocoupler isolation unit comprises a photoelectric coupler U2, the anode of a light emitting diode in the photoelectric coupler U2 is connected with the anode of a diode D2, and the cathode of the light emitting diode is connected with a resistor R5;
the turn-off signal generating unit comprises a switching device V1, a driver U1, resistors R1-R3 and a diode D1, wherein the input end of the driver U1 is connected with the output end of a photoelectric coupler U2, the output end of the driver U1 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with one end of the resistor R2 and the grid electrode of the switching device V1, the other end of the resistor R2 is connected to the drain electrode of the switching device V1 and is connected to a negative power supply, the source electrode of the switching device V1 is connected with one end of the resistor R1, the other end of the resistor R1 is connected with the cathode of the diode D1, and the anode of the diode D1 is directly connected with the grid electrode of the IGBT.
2. The IGBT short-circuit protection circuit based on the inductance current change rate according to claim 1, wherein the output end of the fault signal holding unit is connected with the input end of the IGBT driving unit, and is used for sending a fault signal to the IGBT driving unit to block the IGBT driving signal and turn off the IGBT.
3. The IGBT short-circuit protection circuit based on the inductance current variation rate according to claim 1, wherein the fault signal holding unit includes a resistor R4 and a capacitor C1, wherein one end of the resistor R4 is connected to one end of the capacitor C1 and is connected to the output terminal of the photo coupler U2, the other end of the resistor R4 is connected to the power supply Vcc, and the other end of the capacitor C1 is connected to the negative power supply.
4. The IGBT short-circuit protection circuit based on the inductor current variation rate according to claim 1, wherein the switching device is a mosfet.
5. An IGBT circuit comprises an IGBT and an IGBT driving unit, wherein the IGBT driving unit is connected with a grid electrode of the IGBT; the IGBT short-circuit protection circuit based on the inductance current change rate is characterized by further comprising the IGBT short-circuit protection circuit based on the inductance current change rate according to any one of claims 1 to 4.
6. A protection method of an IGBT short-circuit protection circuit based on an inductance current change rate according to any one of claims 1 to 4, comprising the steps of:
1) The detection unit detects the current change rate of the internal packaging inductance or the stray inductance of the IGBT in real time;
2) The fault signal generating unit outputs a fault signal when the current change rate exceeds a set threshold;
3) The fault signal holding unit holds the fault signal to send to the shutdown signal generating unit;
4) The turn-off signal generating unit generates a turn-off signal to the gate of the IGBT to turn off the IGBT when receiving the fault signal.
7. The protection method according to claim 6, wherein in step 3), a fault signal is transmitted to the IGBT driving unit to block the driving signal and turn off the IGBT, together with the fault signal to the off signal generating unit.
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| CN117394270B (en) * | 2023-12-12 | 2024-04-16 | 杭州飞仕得科技股份有限公司 | Overcurrent protection circuit and method |
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